CN116299888A - Optical interconnection device and manufacturing method thereof - Google Patents

Abstract

The invention relates to the field of chip technology, and provides an optical interconnection device and a manufacturing method thereof. Wherein, the optical interconnection device includes: a plurality of electrical chips, which includes a first electrical chip and a second electrical chip; a first optical interconnection, which has a plurality of optical waveguides; wherein, the first electrical chip and The second electrical chip is communicatively connected through the optical waveguide of the first optical interconnect. According to the embodiment of the present invention, multiple electrical chips can implement, for example, a hybrid cube network communication interconnection topology or other complex interconnection topologies through optical interconnection, and simultaneously process information in parallel, with tight information interconnection between chips, It can better meet the computing power and bandwidth requirements of artificial intelligence algorithms. Compared with electrical interconnection, optical interconnection has large bandwidth, low delay, low power consumption, high integration and strong anti-electromagnetic interference ability.

Description

Optical interconnection device and manufacturing method thereof

technical field

The present invention relates to the field of chip technology, and more specifically, to an optical interconnection device and a manufacturing method thereof.

Background technique

VLSI technology has become a pillar supporting the development and evolution of an information society. Various types of chips widely used in information systems usually rely on the upgrade of the electronic chip process to achieve performance improvement and power consumption optimization. However, as the chip technology is gradually approaching the physical limit, the pace of Moore's Law is slowing down, and further development requires new ideas. Traditional information interconnection is mainly realized by electronic conduction through copper medium, and the speed and distance of electronic information transmission are limited by the time constant of resistance and capacitance and electrical loss, resulting in the diameter of the required copper wire increasing with the transmission speed and transmission distance. The significant increase, coupled with signal crosstalk between electronic information channels constrains the power consumption and bandwidth density of interconnects. On the other hand, high-speed interconnections are often required between chips. For example, with the development of the field of artificial intelligence, the application of deep learning algorithms often requires high-speed communication between computing units and storage units for a large amount of data on computing chips. This makes the power consumption and bandwidth density of traditional electrical interconnects a more serious problem, thereby limiting the development of higher performance artificial intelligence chips.

Contents of the invention

The present invention provides an optical interconnection device and a manufacturing method thereof. The optical interconnection is used as the interconnection medium between chips, which avoids various defects caused by electrical interconnection.

According to an aspect of the present invention, an optical interconnection device is provided, the optical interconnection device includes: a plurality of electrical chips, which include a first electrical chip and a second electrical chip; a first optical interconnection, which has a plurality of an optical waveguide; wherein, the first electrical chip and the second electrical chip are communicatively connected through the optical waveguide of the first optical interconnect.

In some embodiments, the optical interconnection device further includes: an electro-optical conversion unit connected to the first electrical chip, configured to carry information carried by the electrical signal of the first electrical chip into an optical signal, The optical signal is transmitted in the optical waveguide of the first optical interconnection; the photoelectric conversion unit, which is connected to the second electrical chip, converts the received optical signal into an electrical signal transmitted to the second electrical chip signal; wherein, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnection.

In some embodiments, the first optical interconnect is disposed on the carrier substrate; the plurality of electrical chips are disposed on the first optical interconnect; wherein the first optical interconnect A photonic integrated circuit is included, and the photonic integrated circuit includes the plurality of optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.

In some embodiments, the optical interconnection device further includes: a plurality of optical fibers; and a second optical interconnection having a plurality of optical waveguides, the second optical interconnection and the first optical interconnection The plurality of optical fibers are interconnected; wherein, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: successively passing through the optical waveguide in the first optical interconnection, the multiple At least one of the optical fibers and the transmission path of the optical waveguide of the second optical interconnection.

In some embodiments, the first optical interconnection and the second optical interconnection are disposed on the carrier substrate; the first electrical chip is disposed on the first optical interconnection, and the first optical interconnection is disposed on the carrier substrate; An optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit includes the plurality of optical waveguides and the electro-optic conversion unit; the second electrical chip is arranged on the second optical interconnection; the second The optical interconnect includes a photonic integrated circuit, and the photonic integrated circuit of the second optical interconnect includes the photoelectric conversion unit.

In some embodiments, the photonic integrated circuit of the first optical interconnect further includes a dielectric layer, a first conductive wiring unit, and a second conductive wiring unit; multiple optical waveguides in the photonic integrated circuit, the The electro-optical conversion unit and the photoelectric conversion unit are covered by the dielectric layer; the first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first electronic chip; the second conductive wiring The unit is configured to electrically connect the photoelectric conversion unit to the second electrical chip; the first conductive wiring unit includes a first electrical connection structure, and the first electrical connection structure passes through at least part of the dielectric layer ; The second conductive wiring unit includes a second electrical connection structure, and the second electrical connection structure passes through at least part of the dielectric layer.

In some implementations, the electro-optical conversion unit includes a modulator array, which modulates the information carried by the electrical signal of the first electrical chip into optical signals of different wavelengths and transmits them in a wavelength division multiplexing manner; The photoelectric conversion unit includes a detector array, which performs wave division multiplexing on the received optical signal and converts it into an electrical signal transmitted to the second electronic chip.

In some embodiments, the modulator array includes a plurality of microring modulators; and/or the detector array includes a plurality of microring filtered detectors.

In some embodiments, the plurality of electrical chips includes one or more chiplets.

In some embodiments, the first electrical chip and the second electrical chip are mounted during wafer level packaging.

According to one aspect of the present invention, an optical interconnection device is provided, the optical interconnection device includes: a first electrical chip, a second electrical chip; a first optical interconnection; the first electrical chip, the second electrical A chip is disposed on the first optical interconnection; the first optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit includes: a plurality of optical waveguides; a first electro-optical conversion unit, which is connected to the first an electrical chip connection, for carrying the information carried by the electrical signal of the first electrical chip into the first optical signal; a first photoelectric conversion unit, which is connected with the second electrical chip, for connecting the first The optical signal is converted into an electrical signal transmitted to the second electrical chip; the second electrical-to-optical conversion unit is connected to the second electrical chip, and is used to carry the information carried by the electrical signal of the second electrical chip to the second electrical chip In the second optical signal; and a second photoelectric conversion unit, which is connected to the first electrical chip, and is used to convert the second optical signal into an electrical signal transmitted to the first electrical chip; wherein, the first electrical chip A transmission path of an optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnection; wherein the first The transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnection.

In some embodiments, the optical interconnection device further includes a second optical interconnection, a third electrical chip, and a plurality of optical fibers, wherein the third electrical chip is disposed on the second optical interconnection, The plurality of optical fibers optically connects the first optical interconnection and the second optical interconnection; the photonic integrated circuit of the first optical interconnection further includes a third electro-optical conversion unit, which is connected to the second optical interconnection The first electrical chip is connected to carry the information carried by the electrical signal of the first electrical chip to the third optical signal; the second optical interconnection includes a photonic integrated circuit, and the second optical interconnection The photonic integrated circuit includes a plurality of optical waveguides, a third photoelectric conversion unit connected to the third electrical chip, and used to convert the third optical signal into an electrical signal transmitted to the third electrical chip; wherein , the transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnection, at least one of the plurality of optical fibers an optical fiber, and an optical waveguide in the second optical interconnection.

In some embodiments, the photonic integrated circuit of the first optical interconnection further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the photonic integrated circuit of the first optical interconnection The plurality of optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, and the second photoelectric conversion unit; the plurality of conductive wiring units are configured In order to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, and the second photoelectric conversion unit with corresponding electrical chips; the plurality of conductive wiring units include A plurality of electrical connection structures each passing through at least part of the dielectric layer.

In some embodiments, the first electro-optical conversion unit and the second electro-optic conversion unit each include one or more optical modulators, and the first photoelectric conversion unit and the second photoelectric conversion unit each include one or more photodetectors.

In some embodiments, the light modulator comprises a microring modulator; and/or the photodetector comprises a microring filtered detector.

In some embodiments, the first electrical chip, the second electrical chip, and the third electrical chip include chiplets.

According to an aspect of the present invention, an optical interconnection device is provided, including: a first optical interconnection, including a first photonic integrated circuit, the first photonic integrated circuit includes a first plurality of electro-optic conversion units, a first plurality an optical waveguide, and a first plurality of photoelectric conversion units; a second optical interconnect, comprising a second photonic integrated circuit, the second photonic integrated circuit comprising a second plurality of electro-optical conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units; a first plurality of electrical chips disposed on the first optical interconnect; a second plurality of electrical chips disposed on the second optical interconnect; the first plurality of electrical chips disposed on the second optical interconnect; A plurality of electro-optical conversion units is configured such that each of the first plurality of electrical chips corresponds to at least one electro-optic conversion unit; the first plurality of photoelectric conversion units is configured such that the first plurality of Each of the electrical chips corresponds to at least one photoelectric conversion unit; the first plurality of optical waveguides is configured to: for any two electrical chips in the first plurality of electrical chips, one of the electrical chips corresponds to One electrical-to-optical conversion unit is optically connected to a corresponding photoelectric conversion unit of another electrical chip, so that any two electrical chips in the first plurality of electrical chips can communicate.

In some embodiments, the first optical interconnection is optically connected to the second optical interconnection; at least one electrical chip in the first plurality of electrical chips passes through the first optical interconnection and the second optical interconnect in communication with at least one electrical chip of the second plurality of electrical chips.

In some embodiments, the first optical interconnection is optically connected to the second optical interconnection through a plurality of optical fibers or a plurality of optical waveguides, so that at least one of the first plurality of electrical chips is electrically A chip in communication with at least one electrical chip of the second plurality of electrical chips.

In some embodiments, the first photonic integrated circuit further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the plurality of optical waveguides in the first photonic integrated circuit, the The first plurality of electro-optical conversion units, the first plurality of photoelectric conversion units; each of the plurality of conductive wiring units is electrically connected to each of the first plurality of electro-optical conversion units, or is connected to the plurality of electrical-optical conversion units. Each of the first plurality of photoelectric conversion units is electrically connected; the plurality of conductive wiring units includes a plurality of electrical connection structures, and each of the plurality of electrical connection structures passes through at least part of the intervening an electrical layer; and the plurality of conductive wiring units are electrically connected to the first plurality of electrical chips, so as to electrically connect each of the first plurality of electro-optical conversion units to a corresponding electrical chip, or to connect the Each of the first plurality of photoelectric conversion units is electrically connected to a corresponding electrical chip.

According to one aspect of the present invention, there is provided a method for manufacturing an optical interconnection device, which is characterized in that it includes: providing a wafer; forming a plurality of photonic integrated circuits on the wafer; wherein the plurality of photonic integrated circuits Each of them may include a plurality of optical waveguides, and an electro-optical conversion unit, a photoelectric conversion unit; installing at least one required electrical chip on each of the plurality of photonic integrated circuits; dividing the wafer, Multiple independent optical interconnection devices are obtained.

Connect electrical chips with optical interconnects, load the information on different electrical chips on light waves, and then allow light to shuttle at high speed in optical interconnects to complete the information interconnection between different chips. Compared with electrical interconnection, optical interconnection has large bandwidth, low delay, low power consumption, high integration density and strong anti-electromagnetic interference ability. Moreover, the optical interconnection transmission information on a chip or between chips is not sensitive to distance, allowing more data to be transmitted over longer distances, making the design of computing device architecture more flexible. Therefore, electrical chips connected by optical interconnects can not only maintain the advantages of high yield, low cost, and fast product iteration cycle of electrical chips, but also solve the power consumption and bandwidth density bottlenecks of interconnection between small chips. Applying to artificial intelligence chips can achieve higher system energy efficiency ratio.

Compared with the transmission of electrical signals through electrical wires, the transmission of optical signals through optical waveguides can reduce problems such as energy loss, delay, and crosstalk, and help improve the interconnection performance between chips. In particular, the present invention provides a solution for the interconnection of chiplets. Substituting multiple small chips (Chiplets) for a multifunctional single large chip can break through the physical bottleneck of the chip area, and is an important way to achieve higher performance chips. As the area of each die becomes smaller, the number of dies that can be placed on a single wafer increases, which can improve yield and reduce cost. At the same time, the use of small chip technology can flexibly upgrade only some modules when improving system performance, thus speeding up the iterative cycle of system upgrades. In addition, the above-mentioned optical interconnection includes a photonic integrated circuit, which is highly integrated and can be directly applied to the interconnection between chips for electrical signal input/output, and thus facilitates the miniaturization and integration of chip packaging.

Further, multiple optical interconnects can also be optically interconnected, so that electrical chips arranged on different optical interconnects can also realize optical connections, so that the optical interconnection is not limited to the same optical interconnect.

In addition, the modulator array uses a high-efficiency and small-area micro-ring modulator array, and the detector array uses a micro-ring filter detector with wave division multiplexing function, so that a large amount of information can be transmitted between electronic chips without being affected. Limitations on power consumption and bandwidth density. By arranging modulator arrays and detector arrays at the position of optical interconnects, multiple identical electrical chips and multiple identical optical interconnects can be used to implement hybrid cube network communication interconnection topologies or other complex interconnections The topological structure allows multiple electronic chips to process information in parallel at the same time, and the electronic chips have tight information interconnection, which can better meet the requirements of artificial intelligence algorithms for computing power and bandwidth. Compared with existing artificial intelligence products, the optical interconnection device of the embodiment of the present invention can integrate more computing units (chips) and storage units (chips), and the use of optical interconnection can ensure organic information interconnection between them, Thereby providing a higher system energy efficiency ratio.

Various aspects, features, advantages, etc. of the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. According to the following detailed description in conjunction with the accompanying drawings, the above-mentioned aspects, features, advantages, etc. of the present invention will become more clear.

Description of drawings

FIG. 1 is a schematic structural view showing an optical interconnection device according to an exemplary embodiment of the present invention.

FIG. 2 is a schematic diagram showing an optical interconnection of the optical interconnection device shown in FIG. 1 .

FIG. 3 shows a connection topology of electrical chips in the optical interconnection device shown in FIG. 2 .

Fig. 4 is a schematic structural diagram showing a modulator array in an exemplary electro-optic conversion unit according to an embodiment of the present invention.

Fig. 5 is a schematic diagram showing the structure of a detector array in an exemplary photoelectric conversion unit according to an embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application.

FIG. 7 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application.

FIG. 8 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application.

Detailed ways

In order to facilitate the understanding of various aspects, features and advantages of the technical solutions of the present invention, the present invention will be specifically described below in conjunction with the accompanying drawings. It should be understood that the various embodiments described below are only used for illustration, rather than for limiting the protection scope of the present invention.

The "including" mentioned in this article is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect.

In addition, the term "connected" herein includes any direct and indirect means of connection. Therefore, if it is described that a first device is connected to a second device, it means that the first device may be directly connected to the second device, or indirectly connected to the second device through other devices.

The descriptions of "first" and "second" in this article are used to distinguish different devices, modules, structures, etc., and do not represent a sequence, nor do they limit that "first" and "second" are different types. In addition, some processes described in the specification, claims, and the above-mentioned drawings of the present application contain multiple operations that appear in a specific order, and these operations may not be performed in the order in which they appear herein or performed in parallel. . The serial numbers of operations, such as 101, 102, etc., are only used to distinguish different operations, and the serial numbers themselves do not represent any execution order. Additionally, these processes can include more or fewer operations, and these operations can be performed sequentially or in parallel.

In one embodiment of the present invention, the optical interconnection device includes a plurality of electrical chips and an optical interconnection, and any two electrical chips in the plurality of electrical chips perform information exchange, that is, a communication connection, through the optical interconnection. The optical interconnection has a plurality of optical waveguides, for example, the optical interconnection can be implemented using an optical chip. The multiple electrical chips include any first electrical chip and second electrical chip, and the optical interconnection device further includes an electro-optical conversion unit and a photoelectric conversion unit, wherein the electrical-optical conversion unit is connected to the first electrical chip , for carrying the information carried by the electrical signal of the first electrical chip into an optical signal, and the optical signal is transmitted in the optical waveguide of the first optical interconnection; the photoelectric conversion unit and the second The two electrical chips are connected to convert the received optical signal into an electrical signal transmitted to the second electrical chip; and, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: the first An optical waveguide in an optical interconnect. In some embodiments, the optical interconnect includes the electro-optical conversion unit and the photoelectric conversion unit. The electro-optical conversion unit includes a modulator, which modulates the information carried by the electrical signal of the first electrical chip into an optical signal, and the optical signal is transmitted to the optical signal through the optical waveguide in the optical interconnection. a photoelectric conversion unit, the photoelectric conversion unit converts the optical signal into an electrical signal, and the electrical signal is transmitted to the second electrical chip. That is to say, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: the optical waveguide in the optical interconnection.

In another embodiment of the present invention, the optical interconnection device includes a plurality of electrical chips and a plurality of optical interconnections, and different optical interconnections are interconnected via optical fibers, and the optical interconnection is provided with An optical coupling structure (such as a grating coupler or an end-face coupler) connected to an optical fiber. Any two electrical chips located at or adjacent to the same optical interconnection perform signal transmission, that is, communication connection through the optical interconnection, as described above, and will not be repeated here. Any two electrical chips located at or adjacent to different optical interconnects perform signal transmission through corresponding optical interconnects and optical fibers. Specifically, the plurality of optical interconnects includes a first optical interconnect and a second optical interconnect, each having a plurality of optical waveguides. The plurality of electrical chips includes any of a first electrical chip located at or adjacent to the first optical interconnect and a second electrical chip located at or adjacent to the second optical interconnect. The first optical interconnection includes an electro-optical conversion unit connected to the first electrical chip, and the second optical interconnection includes a photoelectric conversion unit connected to the second electrical chip, wherein the electrical-optical conversion The unit carries the information carried by the electrical signal of the first electrical chip into an optical signal, and the optical signal is transmitted to the optical fiber through the optical waveguide in the first optical interconnection, and is transmitted to the optical fiber through the optical fiber. The second optical interconnection is then transmitted to the photoelectric conversion unit via the optical waveguide of the second optical interconnection, the photoelectric conversion unit converts the optical signal into an electrical signal, and the electrical signal is transmitted to the second electronic chip. That is to say, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: successively passing through the optical waveguide in the first optical interconnection, the optical fiber, and the second optical interconnection The transmission path of the optical waveguide of the component.

Although the above embodiments have been described with the optical signal transmission from the first electrical chip to the second electrical chip, it should be understood that the optical signal transmission from the second electrical chip to the first electrical chip can also be transmitted in the same manner. That is to say, for each electrical chip, an electro-optical conversion unit and a photoelectric conversion unit for signal transmission with another electrical chip are provided in the corresponding optical interconnect.

It should be noted that the number of electrical chips and optical interconnects is not particularly limited in the present invention. In some embodiments, 2 or more electrical chips communicate with each other through 1 optical interconnect. In other embodiments, 2 or more electrical chips communicate with each other through 2 or more optical interconnects.

FIG. 1 is a schematic structural view showing an optical interconnection device according to an exemplary embodiment of the present invention. In an exemplary embodiment of the present invention, the optical interconnection device includes a carrier substrate 100, optical interconnections 201, 202, and a plurality of electrical chips, and the plurality of electrical chips include an electrical chip A, an electrical chip B , electric chip C, electric chip D, electric chip E, electric chip F, electric chip G, and electric chip H.

Two optical interconnects are arranged side by side on the carrier substrate 100, namely an optical interconnect 201 and an optical interconnect 202. In some implementations, the optical interconnect includes a photonic integrated circuit.

Four electrical chips are integrated on the optical interconnect 201 , namely, electrical chip A, electrical chip B, electrical chip C, and electrical chip D. Four electrical chips are integrated on the optical interconnection member 202 , namely the electrical chip E, the electrical chip F, the electrical chip G, and the electrical chip H. Any one of the four electrical chips on the same optical interconnection is optically interconnected with the other three electrical chips through the optical interconnection, and is also optically interconnected with an electrical chip on the other optical interconnection. Fig. 2 exemplarily shows the optical interconnection structure of the optical interconnection device and the position of the corresponding electrical chip.

In a specific embodiment, the optical interconnection includes a photonic integrated circuit including a plurality of optical waveguides, an electro-optical conversion unit, and an electrical-to-optical conversion unit. In some embodiments, the electro-optic conversion unit includes one or more optical modulators, and a plurality of modulators may constitute a modulator array. The photoelectric conversion unit includes one or more photodetectors, and a plurality of photodetectors can form a detector array. Exemplarily, the modulator can modulate the initial light based on the electrical signal, so as to generate an optical signal carrying information, that is, carry the information carried by the electrical signal into the optical signal.

In this exemplary embodiment, the respective photonic integrated circuits of the optical interconnects 201 and 202 are provided with a plurality of electro-optical conversion units and a plurality of photoelectric conversion units, each electro-optic conversion unit includes a modulator array, and each photoelectric conversion unit includes a detector array. device array, as shown in Figure 2. In an exemplary embodiment, the photonic integrated circuit of the optical interconnection can also include a plurality of conductive wiring units (not shown in FIG. The electrical connection of the chip, so as to obtain the electrical signal bearing information from the electrical chip, or send the electrical signal bearing information to the electrical chip.

In some implementations, as shown in Figure 2, for any electrical chip, it corresponds to connect four modulator arrays (four electro-optical conversion units) and four detector arrays (four photoelectric conversion units) in the optical interconnect. unit), and electrical chips are arranged on the corresponding area on the optical interconnect (the parts pointed to by the electrical chips A-H in FIG. 2 , that is, the electrical chips A-H corresponding to FIG. 1 ). Taking the electronic chip A as an example, the optical interconnect is correspondingly integrated with a modulator array M1, a modulator array M2, a modulator array M3, and a modulator array M4, and a detector array D1, a detector array D2, and a detector array are integrated. Sensor array D3, and detector array D4. Wherein, the modulator array M1 passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling fiber array, the optical waveguide in the optical interconnection 202, and the detector array corresponding to the electrical chip F in the optical interconnection 202 For optical communication, the detector array D1 passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling fiber array, the optical waveguide in the optical interconnection 202, and the corresponding electrical chip F on another optical interconnection 202 The modulator array in the optical interconnection 201 performs optical communication; the modulator array M2 performs optical communication with the detector array corresponding to the electronic chip B on the optical interconnection 201 through the optical waveguide in the optical interconnection 201, and the detector array D2 passes through the optical waveguide. The optical waveguide in the interconnection 201 performs optical communication with the modulator array corresponding to the electrical chip B on the optical interconnection 201; the modulator array M3 communicates with the optical interconnection through the optical waveguide in the optical interconnection 201 The detector array corresponding to the electrical chip C on 201 performs optical communication, and the detector array D3 communicates optically with the modulator array corresponding to the electrical chip C on the optical interconnection 201 through the optical waveguide in the optical interconnection 201. Communication; the modulator array M4 performs optical communication with the detector array corresponding to the electrical chip D on the optical interconnection 201 through the optical waveguide in the optical interconnection 201, and the detector array D4 passes through the optical interconnection 201 The optical waveguide is in optical communication with the modulator array corresponding to the electrical chip D on the optical interconnect 201 .

The optical interconnects 201, 202 may also include an optical coupling structure such as a grating coupler or an end face coupler, which is used to couple multiple wavelength lasers output by the laser module into the optical interconnect, and pass through a series of beam splitters The modulator distributes the laser energy evenly to the input port of the modulator array under different electronic chips. The beam splitter may be, for example, a broadband beam splitter. Taking the electronic chip A as an example, the multiple wavelength lasers output by the laser module are coupled into the optical interconnection 201 through the optical coupling structure 300, and the laser energy is evenly distributed to the optical interconnection 201 through a series of beam splitters 400 and The optical modulator array M1 , modulator array M2 , modulator array M3 , and modulator array M4 are respectively connected to the optical waveguides, so that the distributed optical signals are input to the corresponding modulator arrays through the corresponding optical waveguides. In some embodiments, a laser module and associated optical components may be provided to couple light from the laser module into an optical waveguide in the optical interconnect. Optionally, the optical interconnections 201 and 202 may also be optically connected through a plurality of optical waveguides.

The information on the corresponding electrical chip is modulated into optical signals of different wavelengths by each modulator array and transmitted in a wavelength division multiplexing manner, and the optical waveguide of the optical interconnection or the optical fiber of the additional coupling optical fiber array The modulated optical signal is transmitted to the detector array under other electronic chips, and the detector array performs wave division and multiplexing on the modulated signal and converts it into an electrical signal, thereby completing the information transmission between different electronic chips. Taking electrical chip A as an example, the modulator array M1 loads the information processed and output by electrical chip A into an optical signal, and the optical signal sequentially passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling optical fiber array, and the optical interconnection The optical waveguide in the component 202 is transmitted, and reaches a detector array under the electronic chip F. The detector array performs wave division and multiplexing on the received optical signal and converts it into an electrical signal. The electrical signal is input to the electrical chip F Processed by the electric chip F. The modulator array M2 loads the information processed and output by the electrical chip A into the optical signal, and the optical signal is transmitted to a detector array under the electrical chip B through the optical waveguide in the optical interconnection 201, and the detector array is sensitive to the received The optical signal undergoes wave division multiplexing and is received and converted into an electrical signal. The electrical signal is input into the electronic chip B and processed by the electronic chip B. Modulator array M3 and modulator array M4 are processed similarly to modulator array M2. In addition, the detector array D1, the detector array D2, the detector array D4, and the detector array D4 also perform wave division multiplexing on the optical signal sent to the electrical chip A and receive and convert it into an electrical signal. The electrical signal is input into the electrical chip A for processing.

In an exemplary embodiment, the four electrical chips on each optical interconnect are connected to the nearest neighbor and the second nearest neighbor through optical signals, and then optically interconnected with the other four electrical chips through a coupling fiber array, finally forming a hybrid The cubic network topology communication interconnection structure is shown in Figure 3. The hybrid cube network topology multiplexes two optical interconnects and eight electrical chips, improving the energy efficiency of the system. In some embodiments, the electrical chip can use a reduced-sized electrical chip, thereby reducing chip design and processing costs, and effectively improving the yield rate of the chip.

Fig. 4 exemplarily shows an electro-optical conversion unit, which includes a modulator array, and in some embodiments, the modulator array includes a plurality of microring modulators. As shown in Figure 4, the modulator array is composed of a series of microring modulators 401, which are based on the carrier depletion effect and can support high modulation rates. This type of waveguide structure is in different regions of the ridge waveguide Doping is performed to form a lateral or vertical PN junction structure (including a lateral or vertical PN junction) 402 . The PN junction works in the reverse bias mode. When the reverse bias voltage is applied, the depletion region in the PN junction increases and the built-in electric field increases. There are no free carriers in the depletion region, and the corresponding refractive index of the ring waveguide 403 changes, causing its resonance wavelength to shift, and the intensity of a specific wavelength near the resonance peak will change greatly, so as to achieve the purpose of intensity modulation . The microring modulator has small size, low power consumption and high modulation efficiency. When modulating the electrical information data from the electrical chip, the heating electrode 404 on the microring modulator can be adjusted to correspond to the carrier wave of a specific wavelength, and the modulated optical signals of different wavelengths propagate independently on the optical waveguide 407, realizing multiple Channel WDM signal transmission. Wherein, multiple microrings can correspond to multiple different wavelengths. It is useful to detect whether the performance of the device is normal by the monitoring photodetectors 405, for example, if the optical interconnection is faulty, it can be analyzed by these monitoring photodetectors 405. The waveguide terminal 406 can be a dummy photodetector not coupled to an external electrical chip, which can absorb the residual optical energy at the end of the waveguide so as not to affect the transmission of optical signals by other optical waveguides. It should be pointed out that the term modulator array only means that it is arranged in a certain position. On the basis of meeting the functional requirements, the term array does not specifically limit the arrangement form and arrangement rules of each modulator, nor is it limited to a two-dimensional form. array.

Fig. 5 exemplarily shows a photoelectric conversion unit, which includes a detector array. In some embodiments, as shown in Fig. 5, the detector array includes a plurality of microring filter detectors 501, and the microring filter detects The device 501 includes a heating electrode 502, a ring waveguide 503, and a signal light detector 504. By adjusting the heating electrode 502 on the microring filter detector 501 to adjust the ring waveguide 503, the optical signal of a specific wavelength is filtered out from the optical waveguide 507, and downloaded to the signal optical detector 504 coupled with the electric chip to realize the optical signal to the Conversion of electrical signals. Wherein, multiple microrings can correspond to multiple different wavelengths. And, the residual optical energy at the end of the waveguide is absorbed by the waveguide terminal 505 connected with the optical waveguide 507 and the signal light detector 504, so that it does not affect the signal transmission of other optical waveguides. It should be pointed out that the term detector array only means that it is arranged in a certain position. On the basis of meeting the functional requirements, the term array does not specifically limit the arrangement form and arrangement rules of each detector, nor is it limited to a two-dimensional form. array.

In some embodiments, the electrical chip of the optical interconnection device can be selected from CPU, GPU, memory chip, etc., and can include digital circuits or analog circuits.

An exemplary embodiment of the present invention provides a method for manufacturing an optical interconnection device, which can be used to manufacture the optical interconnection device in the above-mentioned embodiments. The method includes:

S601. Providing a wafer.

S602. Form a plurality of photonic integrated circuits on the wafer.

Wherein, each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, an electro-optical conversion unit, and a photoelectric conversion unit, and the plurality of optical waveguides may be used to form an optical waveguide unit, that is, the optical waveguide unit includes a plurality of optical waveguides. Each photonic integrated circuit in the plurality of photonic integrated circuits may further include a plurality of conductive wiring units, and the plurality of conductive wiring units may connect the electro-optic conversion unit and/or the photoelectric conversion unit to the corresponding electronic chip, so as to receive signals from The electrical signal of the chip to be communicated and/or the electrical signal used for communication is sent to the electrical chip. Typically, a plurality of photonic integrated circuits are formed in multiple regions on a wafer, and in a subsequent step, the wafer is diced to form individual photonic integrated circuits, which are used to form optical interconnects, i.e. An optical interconnect includes the photonic integrated circuit.

S603. Install at least one required electrical chip on each of the plurality of photonic integrated circuits. For example, a first electric chip and a second electric chip are arranged so that the first electric chip is electrically connected to the first conductive wiring unit, the second electric chip is electrically connected to the second conductive wiring unit, and the first electric chip is electrically connected to the first conductive wiring unit. The electro-optical conversion unit receives the first electrical signal of the first electrical chip through the first conductive wiring unit, and encodes to generate a first optical signal; the first photoelectric converter is used to convert the first optical signal into an electrical signal and transmit it to The second conductive wiring unit.

S604. Divide the wafer to obtain multiple independent optical interconnection devices.

In some embodiments, a single photonic integrated circuit and said first electrical chip and said second electrical chip mounted (disposed) on said photonic integrated circuit are included in a single optical interconnection device. Wherein, the first electrical chip and the second electrical chip can pass through the first conductive wiring unit, the first electro-optic conversion unit, at least one optical waveguide among the plurality of optical waveguides, the first photoelectric conversion unit and the second conductive wiring unit to communicate. An independent single optical interconnection device specifically includes one photonic integrated circuit.

In the above S601, the wafer includes a semiconductor layer. In an example, the above-mentioned wafer may be a semiconductor-on-insulator wafer, such as an SOI (Silicon-On-Insulator, silicon-on-insulator) wafer. As shown in FIG. 6 , the semiconductor-on-insulator wafer may include: an insulating layer 602 , a semiconductor layer 603 formed on the insulating layer 602 , and a back substrate layer 601 located below the insulating layer 602 .

In the above S602, a photonic integrated circuit can be formed by performing processes such as patterning, deposition, and doping on the semiconductor layer 603.

In the above S603, in an example, the first electric chip can be electrically connected to the first conductive wiring unit by bonding or welding, and the second electric chip can be electrically connected to the second conductive wiring unit.

In a specific example, in the above-mentioned step S602, "forming a plurality of photonic integrated circuits on the wafer" can specifically be realized by the following steps:

S21. Form an optical waveguide unit, the first electro-optical conversion unit, and the first photoelectric conversion unit on the wafer.

S22. Deposit a dielectric layer on the wafer formed with the optical waveguide unit, the first electro-optical conversion unit, and the first photoelectric conversion unit, so as to cover the optical waveguide unit, the first electro-optical conversion unit, and the first electro-optical conversion unit. an electro-optical conversion unit, the first photoelectric conversion unit, and the wafer.

S23, forming a first opening and a second opening in the dielectric layer.

S24. Form a first electrical connection structure in the first opening and form a second electrical connection structure in the second opening.

Wherein, the first conductive wiring unit includes the first electrical connection structure; the second conductive wiring unit includes the second electrical connection structure.

In the above S21, as shown in Fig. 6 and Fig. 7, the semiconductor layer 603 of the wafer can be patterned to obtain the corresponding regions of the optical waveguide unit 103, the first electro-optical conversion unit 104 and the first photoelectric conversion unit 105. Specifically, photolithography and etching techniques are used to remove unnecessary materials for patterning. In some embodiments, the above insulating layer may serve as an etch stop layer. In some implementations, the electro-optical conversion unit includes one or more modulators, and a plurality of modulators may constitute a modulator array. The photoelectric conversion unit includes one or more photodetectors, and a plurality of photodetectors can form a detector array. For simplicity, only one modulator and one detector are shown in FIG. 7 .

In the above S22, as shown in FIG. 8, a dielectric layer 106 is deposited on the wafer on which the optical waveguide unit 103, the first electro-optical conversion unit 104 and the first photoelectric conversion unit 105 are formed, so as to cover all The optical waveguide unit 103, the first electro-optical conversion unit 104, the first photoelectric conversion unit 105 and the wafer. Specifically, the dielectric layer 106 is formed on the optical waveguide unit 103, the first electro-optical conversion unit 104, the first photoelectric conversion unit 105, and the insulating layer 602 by deposition. The material of the above-mentioned dielectric layer and the material of the insulating layer can be the same.

In the above S23, as shown in FIG. 8 , a first opening and a second opening are formed in the dielectric layer 106 . The above-mentioned first opening and second opening can be formed by using etching technology, and the number of the first opening and the second opening can be one or more according to connection requirements.

In some embodiments, the dielectric layer 106 is a multi-layer structure formed by a plurality of sub-dielectric layers, multiple conductive layers may be formed in the dielectric layer, and the conductive layers are connected by conductive materials in the openings. For example, the first sub-dielectric layer is deposited first, then the first conductive layer is formed, then the second sub-dielectric layer is deposited, then the second conductive layer is formed, then the third sub-dielectric layer is formed, and the third conductive layer is formed. , and then form the fourth sub-dielectric layer. Wherein, in the first to third conductive layers, different conductive layers are interconnected through the conductive material in the opening, and each conductive layer can be a patterned metal material layer.

In the above S24, as shown in FIG. 8, the first electrical connection structure 101a of the first conductive wiring unit 101 may be formed in the first opening and the second electrical connection structure 101a of the first conductive wiring unit 101 may be formed in the second opening by depositing a conductive material. The second electrical connection structure 102 a of the conductive wiring unit 102 . The first electrical connection structure passes through at least part of the dielectric layer 106; the first electrical connection structure passes through at least part of the dielectric layer 106.

After the conductive material is deposited, the excess conductive material can be removed along the mounting surface of the dielectric layer through a planarization process of chemical mechanical polishing or mechanical grinding, so that the first electrical connection structure and the second electrical connection structure and the dielectric layer The mounting surface is flush.

Subsequently, install the first electrical chip and the second electrical chip on each photonic integrated circuit on the wafer, specifically, in the area corresponding to each photonic integrated circuit on the mounting surface of the dielectric layer 106/photonic integrated circuit Install the first electric chip and the second electric chip, that is, the area corresponding to each photonic integrated circuit on the mounting surface of the dielectric layer 106/photonic integrated circuit, connect the first electric chip and the second electric chip to the area The first electrical connection structure and the second electrical connection structure are electrically connected.

Subsequently, an encapsulant may also be formed on the dielectric layer 106 to bury or cover the first electrical chip and the second electrical chip. Afterwards, the encapsulant can be cured and can be planarized.

In some embodiments, a process of thinning the back substrate layer 601 may be included.

In some embodiments, S604 can be performed after S603, that is, the first electrical chip and the second electrical chip are installed in batches before the photonic integrated circuit wafer is divided. The first electronic chip and the second electronic chip are packaged in batches. At this time, only the photonic integrated circuit wafer needs to be manufactured, and there is no need to form the photonic integrated circuit into a single chip.

In addition, optionally, the process of dividing the wafer can be carried out first, so as to form independent photonic integrated circuits/independent optical interconnects containing photonic integrated circuits, and then carry out the installation of the first electronic chip and the second electronic chip The process is to mount the first electrical chip and the second electrical chip on the independent photonic integrated circuit.

Optionally, multiple independent photonic integrated circuits can be packaged to a certain extent to form multiple independent photonic integrated circuit chips (including bare chips), and the photonic integrated circuit chips are used as optical interconnect chips, that is, optical interconnect The components can use photonic integrated circuit chips. Specifically, the method includes:

S1001. Providing a wafer.

S1002. Form a plurality of photonic integrated circuits on the wafer.

Wherein, each of the plurality of photonic integrated circuits includes a first conductive wiring unit, a second conductive wiring unit, an optical waveguide unit, a first electro-optical conversion unit, and a first photoelectric conversion unit; the first electro-optical conversion unit and The first photoelectric conversion unit is respectively coupled to the optical waveguide unit; the first conductive wiring unit is electrically connected to the first electro-optical conversion unit; the second conductive wiring unit is electrically connected to the first photoelectric conversion unit connect.

S1003. Divide the wafer to obtain multiple independent photonic integrated circuits.

Wherein, a plurality of photonic integrated circuits are divided into independent photonic integrated circuits, so that each photonic integrated circuit chip includes an independent photonic integrated circuit.

S1004. Install a first electrical chip and a second electrical chip on each of the plurality of independent photonic integrated circuit chips, so that the first electrical chip is electrically connected to the first conductive wiring unit, the The second electric chip is electrically connected to the second conductive wiring unit.

As an example, S1004 may be performed after step S1003, but is not limited thereto.

Wherein, the first electrical chip and the second electrical chip can pass through the first conductive wiring unit, the first electro-optical conversion unit, the optical waveguide unit, the first photoelectric conversion unit and the second Two conductive wiring units communicate.

For the specific implementation of the above step S1002, refer to the corresponding content in the above embodiments, and details are not repeated here.

In some embodiments, the aforementioned optical interconnects such as the first optical interconnect and the photonic integrated circuit in the second optical interconnect can be formed by the manufacturing steps of related photonic integrated circuits in the above method, And according to the method mentioned above, at least one electrical chip is arranged on the first optical interconnection, and at least one electrical chip is arranged on the second optical interconnection.

In some embodiments, further comprising the step of optically connecting the first optical interconnect with the second optical interconnect using a plurality of optical fibers. Alternatively, the plurality of optical fibers may be replaced with a plurality of optical waveguides for realizing the optical connection between the first optical interconnection and the second optical interconnection.

In some embodiments, a method of manufacturing an optical interconnect device includes disposing an optical interconnect on a carrier substrate. Exemplarily, the first optical interconnection and the second optical interconnection may be disposed on the carrier substrate.

What needs to be explained here is: for the content that is not fully described in the steps of the method provided in the embodiment of the present application, please refer to the corresponding content in the above embodiment, and will not be repeated here. In addition, in addition to the above-mentioned steps, the methods provided in the embodiments of the present application may also include other parts or all of the steps in the above-mentioned embodiments. For details, please refer to the corresponding content of the above-mentioned embodiments, and details will not be repeated here.

Those skilled in the art should understand that what is disclosed above is only the embodiment of the present invention, and of course the scope of rights of the present invention cannot be limited by this. The equivalent changes made according to the embodiments of the present invention are still covered by the claims of the present invention. scope.

Claims (21)

1. An optical interconnect device, the optical interconnect device comprising:

a plurality of electrical chips including a first electrical chip and a second electrical chip;

a first optical interconnect having a plurality of optical waveguides;

wherein the first electrical chip and the second electrical chip are communicatively connected by an optical waveguide of the first optical interconnect.

2. The optical interconnect device of claim 1 wherein,

the optical interconnect device further includes:

an electro-optical conversion unit connected to the first electrical chip for carrying information carried by an electrical signal of the first electrical chip into an optical signal, the optical signal being transmitted in an optical waveguide of the first optical interconnect;

a photoelectric conversion unit connected to the second electric chip, converting the received optical signal into an electrical signal transmitted to the second electric chip;

wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnect.

3. The optical interconnect device of claim 2, further comprising a carrier substrate;

the first optical interconnect is disposed on the carrier substrate;

The plurality of electrical chips are disposed on the first optical interconnect;

wherein the first optical interconnect comprises a photonic integrated circuit comprising the plurality of optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.

4. The optical interconnect device of claim 2 wherein,

the optical interconnect device further includes:

a plurality of optical fibers; and

a second optical interconnect having a plurality of optical waveguides, the second optical interconnect being interconnected with the first optical interconnect by the plurality of optical fibers;

wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: a transmission path sequentially passing through the optical waveguide in the first optical interconnect, at least one of the plurality of optical fibers, and the optical waveguide of the second optical interconnect.

5. The optical interconnect device of claim 4, further comprising a carrier substrate;

the first optical interconnection and the second optical interconnection are arranged on the bearing substrate;

the first electrical chip is arranged on the first optical interconnection piece, and the first optical interconnection piece comprises a photonic integrated circuit which comprises the plurality of optical waveguides and the electro-optical conversion unit;

The second electrical chip is disposed on the second optical interconnect, the second optical interconnect including a photonic integrated circuit, the photonic integrated circuit of the second optical interconnect including the photoelectric conversion unit.

6. The optical interconnect device of claim 3, wherein the photonic integrated circuit of the first optical interconnect further comprises a dielectric layer, a first conductive routing cell, a second conductive routing cell;

a plurality of optical waveguides in the photonic integrated circuit, the electro-optical conversion unit, and the photoelectric conversion unit are covered with the dielectric layer;

the first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first electrical chip;

the second conductive wiring unit is configured to electrically connect the photoelectric conversion unit to the second electric chip;

the first conductive wiring unit comprises a first electrical connection structure penetrating at least part of the dielectric layer;

the second conductive wiring unit includes a second electrical connection structure that passes through at least a portion of the dielectric layer.

7. The optical interconnect device of claim 6 wherein,

The electro-optical conversion unit comprises a modulator array, wherein the modulator array modulates information carried by the electric signals of the first electric chip onto optical signals with different wavelengths and transmits the information in a wavelength division multiplexing mode;

the photoelectric conversion unit includes a detector array that performs wavelength division multiplexing on the received optical signal and converts it into an electrical signal that is transmitted to the second electrical chip.

8. The optical interconnect device of any of claims 1, 6-7 wherein the modulator array comprises a plurality of micro-ring modulators; and/or

The detector array includes a plurality of microring filter detectors.

9. The optical interconnect device of claim 8, wherein the plurality of electrical chips comprises one or more chiplets.

10. The optical interconnect device of claim 9 wherein the first and second electrical chips are mounted during wafer level packaging.

11. An optical interconnect device, the optical interconnect device comprising:

a first electrical chip, a second electrical chip;

a first optical interconnect;

the first electric chip and the second electric chip are arranged on the first optical interconnection piece;

the first optical interconnect includes a photonic integrated circuit, the photonic integrated circuit comprising:

A plurality of optical waveguides;

a first electro-optical conversion unit connected with the first electric chip for carrying information carried by an electric signal of the first electric chip into a first optical signal;

a first photoelectric conversion unit connected to the second electric chip for converting the first optical signal into an electric signal transmitted to the second electric chip;

a second electro-optical conversion unit connected to the second electrical chip for carrying information carried by an electrical signal of the second electrical chip into a second optical signal; and

a second photoelectric conversion unit connected to the first electric chip for converting the second optical signal into an electric signal transmitted to the first electric chip;

wherein a transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect;

wherein a transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect.

12. The optical interconnect device of claim 11, further comprising a second optical interconnect, a third electrical chip disposed on the second optical interconnect, and a plurality of optical fibers optically connecting the first optical interconnect and the second optical interconnect;

The photonic integrated circuit of the first optical interconnect further comprises a third electro-optical conversion unit connected to the first electrical chip for carrying information carried by the electrical signal of the first electrical chip to a third optical signal;

the second optical interconnection comprises a photonic integrated circuit, the photonic integrated circuit of the second optical interconnection comprises a plurality of optical waveguides, and a third photoelectric conversion unit is connected with the third electric chip and is used for converting the third optical signal into an electric signal transmitted to the third electric chip;

wherein a transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnect, at least one optical fiber of the plurality of optical fibers, an optical waveguide in the second optical interconnect.

13. The optical interconnect device of claim 11 or 12, wherein the photonic integrated circuit of the first optical interconnect further comprises: a dielectric layer, a plurality of conductive wiring units;

the dielectric layer covers the plurality of optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, the second photoelectric conversion unit in the photonic integrated circuit of the first optical interconnect;

The plurality of conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit with corresponding electrical chips;

the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer.

14. The optical interconnect device of claim 13, wherein the first electro-optic conversion unit and the second electro-optic conversion unit each comprise one or more optical modulators, the first photoelectric conversion unit, and the second photoelectric conversion unit each comprise one or more photodetectors.

15. The optical interconnect device of claim 14 wherein the optical modulator comprises a micro-ring modulator; and/or the photodetector comprises a microring filter detector.

16. The optical interconnect device of claim 14 wherein the first, second, and third electrical chips comprise chiplets therein.

17. An optical interconnect device, comprising:

a first optical interconnect comprising a first photonic integrated circuit comprising a first plurality of electro-optic conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units;

A second optical interconnect comprising a second photonic integrated circuit comprising a second plurality of electro-optic conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units;

a first plurality of electrical chips disposed on the first optical interconnect;

a second plurality of electrical chips disposed on the second optical interconnect;

the first plurality of electro-optical conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one electro-optical conversion cell;

the first plurality of photoelectric conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one photoelectric conversion unit;

the first plurality of optical waveguides is configured to: for any two electric chips in the first plurality of electric chips, one photoelectric conversion unit corresponding to one electric chip is optically connected to one photoelectric conversion unit corresponding to the other electric chip, so that any two electric chips in the first plurality of electric chips realize communication.

18. The optical interconnect device of claim 17, wherein the first optical interconnect is optically connected to the second optical interconnect;

At least one of the first plurality of electrical chips communicates with at least one of the second plurality of electrical chips through the first optical interconnect and the second optical interconnect.

19. The optical interconnect device of claim 18, wherein the first optical interconnect and the second optical interconnect are optically connected by a plurality of optical fibers or a plurality of optical waveguides such that at least one of the first plurality of electrical chips is in communication with at least one of the second plurality of electrical chips.

20. The optical interconnect device of any of claims 18 or 19, the first photonic integrated circuit further comprising: a dielectric layer, a plurality of conductive wiring units;

the dielectric layer covers the plurality of optical waveguides, the first plurality of electro-optical conversion units, the first plurality of photoelectric conversion units in the first photonic integrated circuit;

each of the plurality of conductive wiring units is electrically connected to each of the first plurality of photoelectric conversion units or electrically connected to each of the first plurality of photoelectric conversion units, respectively;

the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer; and

The plurality of conductive wiring units are electrically connected to the first plurality of electrical chips to electrically connect each of the first plurality of electro-optical conversion units to a corresponding electrical chip or to electrically connect each of the first plurality of photoelectric conversion units to a corresponding electrical chip.

21. The method of manufacturing an optical interconnect device according to any one of claims 1-20, comprising:

providing a wafer;

forming a plurality of photonic integrated circuits on the wafer;

wherein each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, and an electro-optical conversion unit, a photoelectric conversion unit;

mounting at least one electrical chip as required on each of the plurality of photonic integrated circuits;

and dividing the wafer to obtain a plurality of independent optical interconnection devices.

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