CN114481046A

CN114481046A - Electric arc evaporation device

Info

Publication number: CN114481046A
Application number: CN202210091792.2A
Authority: CN
Inventors: 朱国朝; 刘琴铭; 朱敏杰; 袁安素
Original assignee: Nashi New Materials Co ltd
Current assignee: Nashi New Materials Co ltd
Priority date: 2022-01-26
Filing date: 2022-01-26
Publication date: 2022-05-13

Abstract

An arc evaporation device includes a cathode arc evaporation source, a first magnetic field device, a second magnetic field device, and a third magnetic field device. The surface of the cathode arc evaporation source comprises a groove structure configured to limit movement of a cathode arc spot and to accommodate a target droplet. The first magnetic field device is arranged on a first side of the cathode arc evaporation source and is configured to generate a first magnetic field. The second magnetic field device is disposed on the first side and disposed around the first magnetic field device and configured to generate a second magnetic field. The third magnetic field device is disposed around the cathode arc evaporation source, the first magnetic field device, and the second magnetic field device, and is configured to generate a third magnetic field. The magnetic field directions of the first magnetic field and the second magnetic field are opposite, and the magnetic field directions of the first magnetic field and the third magnetic field are the same.

Description

Electric arc evaporation device

Technical Field

The present invention relates to an apparatus, and more particularly, to an arc evaporation apparatus.

Background

In the existing arc evaporation device, when a coating process is performed on a workpiece to be processed, after target surface metal of a cathode arc evaporation source of the arc evaporation device is ionized, plasma can make spiral line motion in a target surface electromagnetic field so as to form a film layer on the surface of the workpiece to be processed. However, during plasma formation, the arc spot does not run fast enough and stays on the target surface for too long, resulting in too high a temperature of part of the molten pool and a large amount of neutral liquid particles. Liquid particles can form on the surface of the coating through-particles and can easily affect the properties of the coating.

Disclosure of Invention

In view of the above, the present application provides an arc evaporation apparatus to solve the above problems.

According to an embodiment of the present application, an arc evaporation apparatus is provided. The arc evaporation device comprises a cathode arc evaporation source, a first magnetic field device, a second magnetic field device and a third magnetic field device. The surface of the cathode arc evaporation source comprises a groove structure. The groove structure is configured to limit movement of the cathode arc spot and to accommodate a target droplet. The first magnetic field device is arranged on a first side of the cathode arc evaporation source. The first magnetic field device is configured to generate a first magnetic field. The second magnetic field device is arranged on the first side of the cathode arc evaporation source and surrounds the first magnetic field device. The second magnetic field device is configured to generate a second magnetic field. The third magnetic field device is arranged around the cathode arc evaporation source, the first magnetic field device and the second magnetic field device. The third magnetic field device is configured to generate a third magnetic field. The magnetic field directions of the first magnetic field and the second magnetic field are opposite, and the magnetic field directions of the first magnetic field and the third magnetic field are the same.

According to an embodiment of the application, the groove structure comprises a U-shaped groove.

According to an embodiment of the present application, the U-shaped groove presents a closed circular ring on the surface of the cathode arc evaporation source.

According to an embodiment of the present application, one end of the first magnetic field device and one end of the second magnetic field device close to the cathode arc evaporation source are coplanar.

According to an embodiment of the present application, the first magnetic field means comprises a cylindrical permanent magnet.

According to an embodiment of the present application, the second magnetic field device includes a ring-shaped permanent magnet or a plurality of cylindrical magnets arranged in a ring-shaped structure.

According to an embodiment of the present application, one end of the third magnetic field device is coplanar with the surface of the cathode arc evaporation source.

According to an embodiment of the application, the third magnetic field means comprises a toroidal coil.

According to an embodiment of the present application, the toroidal coil is configured to load a variable current provided by a dc power source.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application and not to limit the application. In the drawings:

FIG. 1 illustrates a block diagram of an arc evaporation apparatus according to an embodiment of the present application.

FIG. 2 illustrates a partial schematic view of an arc evaporation apparatus according to an embodiment of the present application.

Fig. 3 illustrates a front view of a cathodic arc evaporation source according to an embodiment of the present application.

Fig. 4A and 4B respectively demonstrate operation diagrams of an arc evaporation apparatus according to an embodiment of the present application.

Detailed Description

The following disclosure provides various embodiments or illustrations that can be used to implement various features of the disclosure. The embodiments of components and arrangements described below serve to simplify the present disclosure. It is to be understood that such descriptions are merely illustrative and are not intended to limit the present disclosure. For example, in the description that follows, forming a first feature on or over a second feature may include certain embodiments in which the first and second features are in direct contact with each other; and may also include embodiments in which additional elements are formed between the first and second features described above, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or characters in the various embodiments. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Moreover, spatially relative terms, such as "under," "below," "over," "above," and the like, may be used herein to facilitate describing a relationship between one element or feature relative to another element or feature as illustrated in the figures. These spatially relative terms are intended to encompass a variety of different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Although numerical ranges and parameters setting forth the broad scope of the application are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain standard deviations found in their respective testing measurements. As used herein, "about" generally refers to actual values within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range. Alternatively, the term "about" means that the actual value falls within the acceptable standard error of the mean, subject to consideration by those of ordinary skill in the art to which this application pertains. It is understood that all ranges, amounts, values and percentages used herein (e.g., to describe amounts of materials, length of time, temperature, operating conditions, quantitative ratios, and the like) are modified by the term "about" in addition to the experimental examples or unless otherwise expressly stated. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained. At the very least, these numerical parameters are to be understood as meaning the number of significant digits recited and the number resulting from applying ordinary carry notation. Herein, numerical ranges are expressed from one end to the other or between the two ends; unless otherwise indicated, all numerical ranges set forth herein are inclusive of the endpoints.

Fig. 1 illustrates a block schematic diagram of an arc evaporation apparatus 1 according to an embodiment of the present application. In certain embodiments, the arc evaporation apparatus 1 is used for coating a workpiece to be processed (such as, but not limited to, a tool). In certain embodiments, the arc evaporation apparatus 1 comprises a cathodic arc evaporation source 10, a first magnetic field apparatus 11, a second magnetic field apparatus 12, and a third magnetic field apparatus 13. In certain embodiments, the surface of the cathodic arc evaporation source 10 comprises a groove structure. In certain embodiments, the groove structure is configured to limit movement of the cathode arc spot and to accommodate a target droplet.

In some embodiments, the first magnetic field device 11 is disposed on a first side of the cathode arc evaporation source 10. In certain embodiments, the first magnetic field device 11 is configured to generate a first magnetic field. In some embodiments, the second magnetic field device 12 is disposed on a first side of the cathode arc evaporation source 10 and surrounds the first magnetic field device 11. In certain embodiments, the second magnetic field device 12 is configured to generate a second magnetic field. In certain embodiments, a third magnetic field device 13 is disposed around the cathode arc evaporation source 10, the first magnetic field device 11, and the second magnetic field device 12. In certain embodiments, the third magnetic field device 13 is configured to generate a third magnetic field. In some embodiments, the magnetic field directions of the first magnetic field and the second magnetic field are opposite, and the magnetic field directions of the first magnetic field and the third magnetic field are the same.

It should be noted that the arc evaporation apparatus 1 may further include other components required for performing the coating process. However, to maintain simplicity of illustration, FIG. 1 depicts only the elements relevant to the inventive spirit of the present application.

Fig. 2 illustrates a partial schematic view of an arc evaporation apparatus 2 according to an embodiment of the present application. In certain embodiments, the arc evaporation apparatus 2 may be used to implement the arc evaporation apparatus 1 of the embodiment of fig. 1. Those skilled in the art will appreciate that the arc evaporation apparatus 2 is a closed chamber for performing a coating process on a workpiece to be processed. Fig. 2 depicts a portion of the arc evaporation apparatus 2 from a top view. In certain embodiments, the arc evaporation apparatus 2 includes a cathodic arc evaporation source 20, a first magnetic field apparatus 21, a second magnetic field apparatus 22, and a third magnetic field apparatus 23.

In certain embodiments, the surface S20 of the cathodic arc evaporation source 20 includes a groove structure 20 a. In some embodiments, the groove structure 20a comprises a U-shaped groove. Referring to fig. 3, fig. 3 illustrates a front view of a cathode arc evaporation source 20 according to an embodiment of the present application. In some embodiments, the cathodic arc evaporation source 20 is substantially in the shape of a disk. In some embodiments, the U-shaped groove of the groove structure 20a presents a closed circle at the surface of the cathode arc evaporation source 20. In some embodiments, the surface S20 of the cathodic arc evaporation source 20 can be made of C, Ti, Cr, Zr, AlTi, TiAlCr, or the like.

Please refer to fig. 2 again. In certain embodiments, the first magnetic field device 21 is disposed on a first side of the cathode arc evaporation source 20 (i.e., a backside of the cathode arc evaporation source 20). In some embodiments, the first magnetic field means 21 comprises a cylindrical permanent magnet. In some embodiments, the columnar permanent magnet of the first magnetic field device 21 is disposed at approximately the center of the back side of the cathode arc evaporation source 20. In certain embodiments, the second magnetic field device 22 is disposed on a first side of the cathode arc evaporation source 20 (i.e., a backside of the cathode arc evaporation source 20). In some embodiments, the second magnetic field device 22 comprises a ring-shaped permanent magnet or a plurality of cylindrical magnets arranged in a ring-shaped configuration. In some embodiments, the ring-shaped permanent magnet of the second magnetic field device 22 is disposed around the cylindrical permanent magnet of the first magnetic field device 21.

In some embodiments, the ends of the first magnetic field device 21 and the second magnetic field device 22 close to the cathode arc evaporation source 20 are also located above the plane S1, in other words, the ends of the first magnetic field device 21 and the second magnetic field device 22 close to the cathode arc evaporation source 20 are coplanar. In some embodiments, the end of the first magnetic field device 21 close to the cathode arc evaporation source 20 is the N-pole, and the end of the first magnetic field device 21 far from the cathode arc evaporation source 20 is the S-pole. In some embodiments, the end of the second magnetic field device 22 close to the cathode arc evaporation source 20 is the S-pole, and the end of the second magnetic field device 22 far from the cathode arc evaporation source 20 is the N-pole. In some embodiments, the magnetic field direction of the first magnetic field generated by the first magnetic field device 21 and the magnetic field direction of the second magnetic field generated by the second magnetic field device 22 are opposite with respect to the cathode arc evaporation source 20.

In some embodiments, the third magnetic field device 23 comprises a toroidal coil. In some embodiments, the toroidal coil of the third magnetic field device 23 is arranged around the cathode arc evaporation source 20, the first magnetic field device 21 and the second magnetic field device 22. In certain embodiments, the toroidal coil of the third magnetic field device 23 is configured to load a variable current provided by a dc power supply to generate a magnetic field. In some embodiments, one end of the third magnetic field device 23 is located above the plane S2 as the surface S20 of the cathode arc evaporation source 20, in other words, one end of the third magnetic field device 23 is coplanar with the surface S20 of the cathode arc evaporation source 20. In some embodiments, the magnetic field direction of the third magnetic field generated by the third magnetic field device 23 and the magnetic field direction of the first magnetic field generated by the first magnetic field device 21 are the same with respect to the cathode arc evaporation source 20. It should be noted that, in other embodiments, the third magnetic field device 23 may be in other positions, and the position of the third magnetic field device 23 is not a limitation of the present application. For example, the ends of the first magnetic field device 21, the second magnetic field device 22, and the third magnetic field device 23 close to the cathode arc evaporation source 20 may be coplanar with the plane S1.

In some embodiments, the arc evaporation apparatus 2 further includes other necessary components for performing the coating process. The arc evaporation apparatus 2 further includes, for example, a water-cooled copper back provided on the back side of the cathode arc evaporation source 20, a chamber wall 25 as an anode, and a seal ring 26 provided between the cathode arc evaporation source 20 and the chamber wall 25.

Fig. 4A and 4B respectively demonstrate an operation schematic diagram of the arc evaporation apparatus 2 according to an embodiment of the present application. Referring to fig. 4A, when the toroidal coil of the third magnetic field device 23 is not applied with the current supplied from the dc power supply, the magnetic field has a maximum value on the inner sidewall (position a shown in the drawing) of the closed circular ring of the groove structure 20a under the influence of the first magnetic field generated by the first magnetic field device 21 and the second magnetic field generated by the second magnetic field device 22. Therefore, the arc spot is acted by the magnetic field and mainly generates arc discharge at the position of the A point. Referring to fig. 4B, when the toroidal coil of the third magnetic field device 23 is loaded with the current supplied by the dc power supply, the magnetic field has a maximum value on the outer sidewall (position of B point shown in the figure) of the closed circular ring of the groove structure 20a under the combined action of the first magnetic field generated by the first magnetic field device 21, the second magnetic field generated by the second magnetic field device 22, and the third magnetic field generated by the third magnetic field device 23. Therefore, the arc spot is acted by the magnetic field and mainly generates arc discharge at the position of the B point.

As can be seen from the embodiments of fig. 4A and 4B, by adjusting the current applied to the annular coil of the third magnetic field device 23, the arc spot can be caused to run back and forth on the inner and outer sidewalls of the closed circular ring of the groove structure 20a, so that the motion trajectory of the arc spot can be limited, and the liquid droplets generated by the evaporation of the surface S20 of the cathode arc evaporation source 20 can be limited in the groove structure 20a, so as to ensure that most of the ions are emitted from the surface S20 of the cathode arc evaporation source 20. Therefore, the particles of the coating on the workpiece to be processed can be reduced, and the fineness of the coating of the workpiece to be processed is improved.

It should be noted that although in the embodiment of fig. 4A and 4B, the position of the arc spot in the closed loop of the groove structure 20a is changed by adjusting the current applied by the loop coil of the third magnetic field device 23, this is not a limitation. In some embodiments, the position of the loop coil of the third magnetic field device 23 can be changed in real time, and thus the position of the maximum value of the magnetic field in the closed loop of the groove structure 20a can be changed as well.

In some embodiments, the process gas introduced into the arc evaporation apparatus 2 may be N₂、Ar₂、C₂H₂And the like. In some embodiments, the chamber pressure of the arc evaporation apparatus 2 is maintained in the range of 1-5 pa during the coating process. In certain embodiments, the arc current through the surface S20 of the cathodic arc evaporation source 20 can be in the range of 60-120 amperes, and the bias voltage of the cathodic arc evaporation source 20 is maintained in the range of 30-600 volts. In some embodiments, the arc evaporation apparatus 2 may coat the workpiece to be processed with DLC, TaC, TiN, CrN, ZrN, AlTiN, TiAlCrN, or other materials.

The applicant finds that the arc evaporation device 2 is used for carrying out the film coating process on the workpiece to be processed, so that the surface roughness Ra of the coating on the workpiece to be processed is below 0.03 micrometer, the coating structure is more compact, the hardness of the coating is improved by 10-30%, and the wear resistance and the corrosion resistance are obviously improved.

Example 1:

the arc current was set to 80 amperes, the surface S20 of the cathode arc evaporation source 20 was titanium metal, nitrogen was introduced so that the chamber gas pressure of the arc evaporation apparatus 2 was 1.5 pascals, the bias voltage of the cathode arc evaporation source 20 was 60 volts, the current period applied to the loop coil of the third magnetic field apparatus 23 was 2 seconds, one end of the loop coil of the third magnetic field apparatus 23 was coplanar with the surface S20 of the cathode arc evaporation source 20, and the coating time was 3 hours. Through the process conditions, the surface roughness Ra of the coating of the workpiece to be processed is 0.018 microns, the surface hardness hv of the coating of the workpiece to be processed is 3300, and the film thickness of the coating of the workpiece to be processed is 3 microns.

Example 2:

the arc current was set to 80 amperes, the surface S20 of the cathode arc evaporation source 20 was titanium, nitrogen was introduced so that the chamber pressure of the arc evaporation device 2 was 1.5 pascals, the bias voltage of the cathode arc evaporation source 20 was 60 volts, the current period applied to the loop coil of the third magnetic field device 23 was 2 seconds, the loop coil of the third magnetic field device 23, the first magnetic field device 21, and one end of the second magnetic field device 22 close to the cathode arc evaporation source 20 were coplanar, and the coating time was 5 hours. Through the process conditions, the surface roughness Ra of the coating of the workpiece to be processed is 0.025 micrometer, the surface hardness hv of the coating of the workpiece to be processed is 3000, and the thickness of the coating of the workpiece to be processed is 3 micrometers.

As used herein, the terms "approximately," "substantially," "essentially," and "about" are used to describe and account for minor variations. When used in conjunction with an event or circumstance, the terms can refer to an instance in which the event or circumstance occurs precisely as well as an instance in which the event or circumstance occurs in close proximity. As used herein with respect to a given value or range, the term "about" generally means within ± 10%, ± 5%, ± 1%, or ± 0.5% of the given value or range. Ranges may be expressed herein as from one end point to another end point or between two end points. Unless otherwise specified, all ranges disclosed herein are inclusive of the endpoints. The term "substantially coplanar" may refer to two surfaces located within a few micrometers (μm) along the same plane, e.g., within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm located along the same plane. When referring to "substantially" the same numerical value or property, the term can refer to values that are within ± 10%, ± 5%, ± 1%, or ± 0.5% of the mean of the stated values.

As used herein, the terms "approximately," "substantially," "essentially," and "about" are used to describe and explain minor variations. When used in conjunction with an event or circumstance, the terms can refer to an instance in which the event or circumstance occurs precisely as well as an instance in which the event or circumstance occurs in close proximity. For example, when used in conjunction with numerical values, the terms can refer to a range of variation that is less than or equal to ± 10% of the stated numerical value, e.g., less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%. For example, two numerical values are considered to be "substantially" or "about" the same if the difference between the two numerical values is less than or equal to ± 10% (e.g., less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%) of the mean of the values. For example, "substantially" parallel may refer to a range of angular variation of less than or equal to ± 10 ° from 0 °, e.g., less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °. For example, "substantially" perpendicular may refer to a range of angular variation of less than or equal to ± 10 ° from 90 °, e.g., less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °.

For example, two surfaces may be considered coplanar or substantially coplanar if the displacement between the two surfaces is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm. A surface may be considered planar or substantially planar if the displacement of the surface relative to the plane between any two points on the surface is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm.

As used herein, the singular terms "a" and "the" may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided "on" or "over" another component may encompass the case where the preceding component is directly on (e.g., in physical contact with) the succeeding component, as well as the case where one or more intervening components are located between the preceding and succeeding components.

As used herein, spatially relative terms, such as "below," "lower," "above," "upper," "lower," "left," "right," and the like, may be used herein for ease of description to describe one component or feature's relationship to another component or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present.

The foregoing summarizes features of several embodiments and detailed aspects of the present disclosure. The embodiments described in this disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or obtaining the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure and various changes, substitutions, and alterations can be made therein without departing from the spirit and scope of the present disclosure.

Claims

1. An arc evaporation apparatus, comprising:

a cathode arc evaporation source, wherein a surface of the cathode arc evaporation source comprises a groove structure configured to limit movement of a cathode arc spot and to accommodate a target droplet;

a first magnetic field device disposed at a first side of the cathode arc evaporation source and configured to generate a first magnetic field;

a second magnetic field device disposed at the first side of the cathode arc evaporation source and surrounding the first magnetic field device, configured to generate a second magnetic field; and

a third magnetic field device disposed around the cathode arc evaporation source, the first magnetic field device, and the second magnetic field device, configured to generate a third magnetic field;

wherein the magnetic field directions of the first magnetic field and the second magnetic field are opposite, and the magnetic field directions of the first magnetic field and the third magnetic field are the same.

2. The arc evaporation apparatus of claim 1, wherein said groove structure comprises a U-shaped groove.

3. The arc evaporation apparatus of claim 2, wherein said U-shaped groove presents a closed circular ring on the surface of said cathode arc evaporation source.

4. The arc evaporation apparatus of claim 3, wherein said first magnetic field means and said second magnetic field means are coplanar near one end of said cathode arc evaporation source.

5. The arc evaporation apparatus of claim 4, wherein said first magnetic field means comprises a cylindrical permanent magnet.

6. An arc evaporation apparatus as claimed in claim 4, wherein said second magnetic field means comprises a ring-shaped permanent magnet or a plurality of cylindrical magnets arranged in a ring-shaped configuration.

7. The arc evaporation apparatus of claim 3, wherein one end of said third magnetic field means is coplanar with said surface of said cathode arc evaporation source.

8. The arc evaporation apparatus of claim 7, wherein said third magnetic field means comprises a toroidal coil.

9. The arc evaporation apparatus of claim 7, wherein said toroidal coil is configured to be loaded with a variable current provided by a dc power source.