CN114420402A

CN114420402A - High-orientation and high-resistivity stripe type magnetic film and preparation method thereof

Info

Publication number: CN114420402A
Application number: CN202111544186.3A
Authority: CN
Inventors: 赵晨阳; 罗曦; 安静; 牟星; 何峻
Original assignee: Central Iron and Steel Research Institute
Current assignee: Central Iron and Steel Research Institute
Priority date: 2021-12-16
Filing date: 2021-12-16
Publication date: 2022-04-29

Abstract

The invention relates to a high-orientation high-resistivity fringe type magnetic thin film and a preparation method thereof. The stripe-type magnetic thin film comprises n Fe on a substrate_xCo_yB_zStripes and n dielectric stripes, n is a positive integer and n > 1, the Fe_xCo_yB_zWherein x, y and z are atomic ratio, x is more than or equal to 5000 and less than or equal to 7000, x is more than or equal to 2000 and less than or equal to 4000, and z is more than or equal to 2 and less than or equal to 8. The invention designs the Fe through the magnetic film stripe pattern_xCo_yB_zThe stripes and the dielectric stripes are alternately arranged to obtain a magnetic film with high orientation, high resistivity and ferromagnetic resonance frequency, thereby improving the inductance density, quality factor and working frequency of the inductance element.

Description

High-orientation and high-resistivity stripe type magnetic film and preparation method thereof

Technical Field

The invention belongs to the technical field of on-chip thin film magnetic core inductors, and particularly relates to a high-orientation and high-resistivity fringe type soft magnetic thin film and a preparation method thereof.

Background

With the continuous development of electronic technology and the continuous progress of Micro Electro Mechanical Systems (MEMS) technology, the realization of multi-functional integration and miniaturization of integrated circuits at higher frequencies has become a necessary trend of current development. The system on chip (SoC) born in such a large environment becomes a main solution for replacing the traditional integrated circuit, and is a necessary trend of the current microelectronic chip development. Meanwhile, the requirements of high frequency, high efficiency, miniaturization, integration and low consumption are met, the technology of the inductor is difficult to break through in a chip integrated circuit all the time, and the core problem mainly faced is how to comprehensively improve the inductor density and the quality factor of a chip under the application limit of small size and high working frequency. The Chinese patent publication No. CN 110444364 discloses a laminated magnetic film and a preparation method thereof, and the structure of the laminated magnetic film related to the invention comprises alternately arranged Ni-Co magnetic core layers and Ni-Fe-W magnetic core layers. In order to prepare the anisotropic Ni-Co magnetic core layer and the anisotropic Ni-Fe-W magnetic core layer to improve the current carrying capability of the magnetic core thin film and thus improve the working efficiency of the inductor, a magnetic field induction method is used to improve the orientation of the magnetic core, but the obtained anisotropic field is very small and no relevant data is provided, and fig. 4 shows the magnetic thin film as a control group, which is controlled by applying a magnetic field, and the anisotropic field is only 30 Oe.

Therefore, the product needs to solve the technical problem of improving the in-plane sub-anisotropy field of the thin film magnetic core material. The magnetic anisotropy field is one of the very important magnetic parameters of the magnetic thin film material and is also a key technical index for improving the inductance density of the inductance device. For the magnetic core film material for the on-chip inductor, the large in-plane magnetic anisotropy field is beneficial to the magnetic flux density of the on-chip inductor under the electromagnetic induction working condition, so that the magnetic bias resistance of the magnetic film is effectively improved, the load carrying capacity of the micro-inductor is improved, and the magnetic core film material is one of the guarantees that the on-chip inductor device stably works under high frequency.

Another aspect is to reduce eddy current losses in thin film magnetic core inductive devices. The eddy current can heat the conductor, consume energy, and especially the long-term loss caused by the eddy current can easily age the insulating sheet layer in the chip, and the chip inductance device is brittle and has decayed quality factor. In order to reduce the magnetic induction eddy current loss, in the thin film magnetic core material, the metal conduction area of the magnetic core is reduced, and the resistivity of the magnetic core is improved, which is a feasible technical approach.

Disclosure of Invention

In view of the above problems, it is an object of the present invention to provide a stripe type soft magnetic thin film having high orientation and high resistivity and a method for preparing the same.

The purpose of the invention is realized by the following technical scheme:

a highly oriented, high resistivity striped magnetic film for use in a thin film type inductor, said striped magnetic film comprising n Fe alternately disposed on a substrate_xCo_yB_zStripes and n dielectric stripes, n is a positive integer and n > 1; wherein the matrix is one of silicon, silicon nitride and gallium nitride, x, y and z are atomic ratio, x is greater than or equal to 5000 and less than or equal to 7000, x is greater than or equal to 2000 and less than or equal to 4000, z is greater than or equal to 2 and less than or equal to 8, and the dielectric is one of solid dielectric silicon dioxide, zinc oxide, boron oxide, aluminum oxide, silicon nitride and boron nitride.

6000≤x≤6500，3000≤x≤3500，3≤z≤5。

Said Fe_xCo_yB_zThe thickness of the stripes is 0.5-2 μm, and the thickness of the dielectric stripes is 0.5-2 μm.

Said Fe_xCo_yB_zThe width of the stripe is 5-50 μm, and the width of the dielectric stripe is 5-50 μm.

Said Fe_xCo_yB_zThe ratio of the sum of the widths of the stripes to the length is 0.1-0.8.

In the stripe-type magnetic thin film, Fe_xCo_yB_zThe volume percentage of the water-soluble organic fertilizer is 10-80%, preferably 50-80%.

The substrate is a single-side polished silicon wafer, a single-side polished silicon nitride wafer or a gallium nitride wafer with the thickness of 0.4mm-0.8 mm.

Said Fe_xCo_yB_zThe stripes and the dielectric stripes are the same length.

The film has the following magnetic properties: the anisotropy field is 400 +/-50 Oe, and the ferromagnetic resonance frequency is 4.1-4.9 f_rThe resistivity is 1-5 mu omegam。

A method for preparing the highly oriented, high resistivity striped magnetic thin film, wherein the substrate is a silicon wafer and the dielectric is silicon dioxide, comprising the steps of:

a. carrying out thermal oxidation treatment on the surface of the substrate silicon wafer by using an oxidation furnace to obtain a silicon dioxide film;

b. cleaning the silicon wafer after the thermal oxidation treatment to remove impurities on the surface of the silicon wafer;

c. spin-coating photoresist on the surface of the silicon wafer subjected to surface thermal oxidation treatment by using an automatic spin coater;

d. placing the silicon wafer coated with the photoresist on a heating plate for pre-drying;

e. placing the silicon wafer at room temperature and then placing the silicon wafer under a stripe mask plate for vacuum contact exposure;

f. developing the silicon wafer coated with the photoresist by using a developing solution, and cleaning the silicon wafer by using ultrapure water after the developing to obtain a stripe type mask on the surface of the silicon wafer;

g. placing the silicon wafer on a heating plate for hardening;

h. reactive ion etching thermal oxidation silicon dioxide to obtain a stripe type silicon dioxide film;

i. deposition of Fe by magnetron sputtering_xCo_yB_zFilling gaps among the stripe type silicon dioxide stripes;

j. putting the silicon chip into a container containing acetone for water bath heating, and adding the residual photoresist on the silicon chip and Fe on the photoresist_xCo_yB_zRemoving to obtain Fe_xCo_yB_z-SiO₂Striped film.

Said Fe_xCo_yB_zThe width of the stripe is 5-50 μm, and the SiO is₂The width of the stripe is 5-50 μm.

The thickness of the silicon dioxide film obtained in the step a is 0.5-2 μm.

The width of the mask stripes in the step f is 5-50 μm, and the gaps of the stripes are 5-50 μm.

The width of the silicon dioxide stripes in the step h is 5-50 μm, and the gaps among the silicon dioxide stripes are 5-50 μm.

And h, etching gas used for reactive ion etching is carbon tetrafluoride gas doped with oxygen, wherein the doping amount of the oxygen is more than 12% at.

The target used in the step i is Fe_xCo_yB_zAn alloy target having a purity of more than 99% and a power density of 50W/pi (38cm) at the time of sputtering²～200W/π(38cm)²。

Said Fe in said step j_xCo_yB_z-SiO₂Fe in striped film_xCo_yB_zThe volume percentage of the water-soluble organic fertilizer is 10-80%, preferably 50-80%.

The method further comprises, after step i, step i-2: after magnetron sputtering, the stripe type magnetic film is subjected to in-situ annealing treatment, wherein the annealing temperature is 200-400 ℃, and the annealing time is 1 +/-0.5 hour.

A method for preparing the highly oriented and high resistivity striped magnetic thin film, wherein the substrate is one of a silicon nitride wafer or a gallium nitride wafer, and the dielectric is one of zinc oxide, boron oxide, aluminum oxide, silicon nitride and boron nitride; the preparation method comprises the following steps:

a. cleaning the substrate to remove impurities on the surface of the substrate;

b. spin-coating photoresist on the surface of the substrate by using an automatic spin coater;

c. placing the substrate coated with the photoresist on a heating plate for pre-drying;

d. placing the matrix at room temperature and then placing the matrix under a stripe mask plate for vacuum contact exposure;

e. developing the silicon wafer coated with the photoresist by using a developing solution, and cleaning the silicon wafer by using ultrapure water after the developing to obtain a stripe type mask on the surface of the substrate;

f. putting the substrate on a heating plate for hardening;

g. depositing a dielectric medium by a magnetron sputtering method to fill gaps among the stripe type masks;

h. putting the silicon wafer into a container containing acetone, heating in water bath, and removing the residual photoresist on the silicon wafer and the dielectric on the photoresist to obtain a stripe type dielectric;

i. deposition of Fe by magnetron sputtering_xCo_yB_zFilling gaps between the stripe-type dielectrics;

j. removing excessive Fe on the dielectric by wet etching_xCo_yB_zObtaining Fe_xCo_yB_z-dielectric striped films.

The invention has the beneficial effects that:

the stripe type Fe obtained by the invention_xCo_yB_zThe dielectric film has high resistance and high orientation, so that the eddy current loss of the inductance device can be effectively reduced, and the magnetic bias resistance of the magnetic film can be improved, so that the inductance density and the quality factor of the inductance element under high frequency are effectively improved.

Drawings

FIG. 1 is a schematic plan view of a stripe-type magnetic thin film in example 1 of the present invention;

FIG. 2 shows Fe in the example of the present invention_xCo_yB_z-SiO₂A photomicrograph (1000 times) of the striped magnetic thin film of (1);

FIG. 3 is isotropic Fe_xCo_yB_zA film normalized hysteresis loop diagram;

FIG. 4 shows magnetic field controlled anisotropy of Fe_xCo_yB_zA film normalized hysteresis loop diagram;

FIG. 5 is an anisotropic Fe of the present invention_xCo_yB_z-SiO2 stripe type magnetic film normalized hysteresis loop diagram.

Reference numerals:

1.Fe_xCo_yB_zstripes, 2 dielectric stripes

Detailed Description

The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.

As shown in FIG. 1, a highly oriented, high resistivity striped magnetic film comprises a substrate having n Fe layers alternately arranged thereon_xCo_yB_zA stripe and n dielectric stripes, n being a positive integer, and n > 1. Said Fe_xCo_yIn B, x represents the atomic ratio of Fe, 5000 ≦ x ≦ 7000, preferably 6000 ≦ x ≦ 6500; y represents the atomic ratio of Co, 2000. ltoreq. x.ltoreq.4000, preferably 3000. ltoreq. x.ltoreq.3500; z represents the B atomic ratio, 2. ltoreq. z.ltoreq.8, preferably 3. ltoreq. z.ltoreq.5.

In some embodiments, the substrate is a single-side polished silicon wafer, silicon nitride wafer, gallium nitride wafer having a thickness of 0.4mm to 0.8 mm.

In some embodiments, the dielectric is a solid dielectric such as zinc oxide, boron oxide, aluminum oxide, silicon nitride, boron nitride, or the like, preferably, the dielectric may be silicon dioxide, and the selection of silicon dioxide as the dielectric has the characteristics of simple process, high reliability, and the like, and the prepared stripe-type magnetic thin film can maintain high saturation magnetic induction.

In some embodiments, the substrate is one of a silicon wafer, a silicon nitride wafer or a gallium nitride wafer, the dielectric is one of zinc oxide, boron oxide, aluminum oxide, silicon nitride and boron nitride, and the method for preparing the stripe-type magnetic thin film can also adopt a method of combining a magnetron sputtering technology and a photoetching stripping technology.

In some embodiments, Fe in the striped magnetic film_xCo_yB_zThe stripe-type magnetic thin film occupying between 10% and 80% by volume, preferably between 50% and 80% by volume has excellent soft magnetic characteristics, and also has a high anisotropy field, a high saturation magnetization, and a high resistivity.

In some embodiments, the Fe is deposited by magnetron sputtering at room temperature_xCo_yB_zFilling gaps among the dielectric stripes, and preferably, carrying out in-situ annealing treatment on the stripe type magnetic thin film after magnetron sputtering, wherein the annealing temperature is between 200 ℃ and 400 ℃ and the annealing time is 1 hour. The coercive force of the striped magnetic film can be greatly reduced by the annealing treatment,and can effectively reduce the defects in the film, and the ferromagnetic resonance frequency can be improved.

The method for producing the stripe-type magnetic thin film of the present invention will be described below.

Firstly, the surface of the silicon wafer is oxidized. Specifically, in some embodiments, a thermal oxidation process is used, the silicon wafer is placed in a quartz glass reaction tube in a thermal oxidation furnace, the reaction tube is heated to 900-.

And then cleaning the silicon wafer after the thermal oxidation treatment. Specifically, the silicon wafer surface was cleaned using a standard RCA cleaning process and blown dry with nitrogen. However, the present invention is not limited thereto, and the substrate may be cleaned in other methods.

And then, spin-coating a photoresist on the surface of the silicon wafer subjected to surface thermal oxidation treatment by using an automatic spin coater, and placing the silicon wafer subjected to spin-coating of the photoresist on a heating plate for pre-baking, wherein in some embodiments, the spin-coated photoresist is AZ3100, the rotating speed is 2000 revolutions per minute and 5000 revolutions per minute, the time is 20s, and the pre-baking temperature is between 100 ℃ and 300 ℃ and the time is 120 s.

And then, placing the silicon wafer at room temperature and then placing the silicon wafer under a stripe mask plate for vacuum contact exposure, specifically, firstly preparing a stripe type mask plate, and then placing the silicon wafer coated with the photoresist under the mask plate for vacuum contact exposure for 5 s.

And then developing the silicon wafer coated with the photoresist by using a developing solution, specifically developing by using an AZ3100 special developing solution for 45s, and then cleaning and drying by using ultrapure water to obtain a stripe type mask on the surface of the silicon wafer.

Then, silicon dioxide is etched, specifically, reactive ion etching is used in some embodiments, and the etching gas used in the reactive ion etching is carbon tetrafluoride gas doped with oxygen, wherein the doping amount of the oxygen is more than 12% at, and the etching depth is controlled by etching time.

Then, depositing Fe by magnetron sputtering_xCo_yB_zFilling inThe gaps between the striations of striated silica, specifically by Fe_xCo_yB_zThe target is powered by DC or RF power supply at a power density of 50W/pi (38cm)²～200W/π(38cm)²Sputtering Fe_xCo_yB_zThe film, in some embodiments, argon is used as the inert gas, and the flow of argon is adjusted so that the chamber pressure is adjusted to 0.3mTorr to 8 mTorr. Then the power supply connected with the target gun is turned on to prepare corresponding Fe_xCo_yB_zA film. Fe_xCo_yB_zThe composition of the film can be adjusted by changing the composition of the target. The flow rate of the inert gas can be adjusted by controlling the pressure of the sputtering chamber.

Then, the silicon chip is put into a container filled with acetone for water bath heating, and the residual photoresist on the silicon chip and Fe on the photoresist are heated_xCo_yB_zRemoving to obtain Fe_xCo_yB_z-SiO₂Striped film.

Example 1

The silicon chip is placed in a quartz glass reaction tube in a thermal oxygen furnace, the reaction tube is heated to 1000 ℃ while oxygen is introduced into the reaction tube, and the silicon chip is heated for 6 hours to form a silicon dioxide film with the thickness of more than 500 nm.

And cleaning the surface of the silicon wafer by adopting a standard RCA cleaning process, spin-coating a photoresist AZ3100 at the rotating speed of 3000 rpm for 20s, and baking at 100 ℃ for 120 s.

And (2) placing the silicon wafer coated with the photoresist at room temperature, then placing the silicon wafer under a stripe mask plate with the stripe width of 10 microns and the gap width of 10 microns for vacuum contact exposure for 5s, developing by using an AZ3100 special developing solution for 45s, then cleaning by using ultrapure water and drying by blowing, and obtaining a stripe type mask on the surface of the silicon wafer. The silicon chip is placed on a heating plate and baked for 5-10min at the temperature of 150-.

And performing reactive ion etching on the surface of the silicon wafer by using carbon tetrafluoride gas doped with 20% of oxygen for 22 hours, and etching the silicon dioxide into a stripe-shaped groove with the depth of 500nm, the width of 10 microns and the gap of 10 microns.

Filling the stripe type silicon dioxide groove in a magnetron sputtering mode, putting a silicon wafer on a base station of magnetron sputtering equipment, closing the air exhaust valve in half, opening the air inlet valve and filling argon until the vacuum degree reaches 10 mTorr. The target material is Fe_xCo_yB_zAlloy target, turn on the DC power supply connected with the target gun, 100W/pi (38cm)²And sputtering for 50min to form a metal film with the thickness of about 500 nm.

Putting the silicon chip into a container containing acetone for water bath heating, and adding the residual photoresist on the silicon chip and Fe on the photoresist_xCo_yB_zRemoving to obtain Fe_xCo_yB_zStripe width of 10 micron SiO₂A stripe-type magnetic thin film having a stripe width of 10 μm.

Example 2

And (2) placing the silicon wafer coated with the photoresist at room temperature, then placing the silicon wafer under a stripe mask plate with the stripe width of 5 micrometers and the gap width of 10 micrometers, carrying out vacuum contact exposure for 5s, developing by using an AZ3100 special developing solution for 45s, then cleaning and drying by using ultrapure water, and obtaining a stripe type mask on the surface of the silicon wafer. The silicon chip is placed on a heating plate and baked for 5-10min at the temperature of 150-.

Reactive ion etching is carried out on the surface of the silicon wafer by carbon tetrafluoride gas doped with 20% of oxygen for 22 hours, and silicon dioxide is etched into stripe-shaped grooves with the depth of 500nm, the width of 5 microns and the gap of 10 microns, as shown in figure 2.

Filling the stripe-shaped silicon dioxide groove by magnetron sputtering, placing the silicon chip on a base station of magnetron sputtering equipment, semi-closing an air extraction valve, and beatingThe air inlet valve is opened to fill argon until the vacuum degree reaches 10 mTorr. The target material is Fe_xCo_yB_zAlloy target, turn on the DC power supply connected with the target gun, 100W/pi (38cm)²And sputtering for 50min to form a metal film with the thickness of about 500 nm. The in-situ annealing treatment is carried out on the base platform, the temperature of the base platform is raised to 200-400 ℃, and the temperature is reduced to the room temperature after the temperature is maintained for 1 hour.

Putting the silicon chip into a container containing acetone for water bath heating, and adding the residual photoresist on the silicon chip and Fe on the photoresist_xCo_yB_zRemoving to obtain Fe_xCo_yB_zStripe width of 5 micron SiO₂A stripe-type magnetic thin film having a stripe width of 10 μm.

Isotropic Fe_xCo_yB_zThin film, magnetic field controlled anisotropy Fe_xCo_yB_zFilm and stripe type Fe in example 1_xCo_yB_z-SiO₂The normalized hysteresis loop of the film is shown in fig. 3, 4 and 5. By contrast, the magnetic thin film subjected to the stripe treatment has a larger anisotropy field which can reach 405Oe and is superior to 30Oe of magnetic field control anisotropy, the stripe magnetic thin film prepared in example 1 has the characteristic of high resistivity, and the resistivity is 1-5 mu omega m

Striation type Fe after different annealing temperature treatment in example 2_xCo_yB_z-SiO₂The coercivity and ferromagnetic resonance frequency of the films are shown in table 1:

annealing temperature (. degree.C.)	Coercive force (Oe)	Ferromagnetic resonance frequency (f)_r)
			Without annealing treatment	85	3.8
200	0	4.1
			300	0	4.4
400	0	4.9

Table 1 shows that the streak type Fe was annealed_xCo_yB_z-SiO₂The ferromagnetic resonance frequency of the film is improved, the coercive force is greatly reduced, and the stripe type Fe is annealed at 400 DEG C_xCo_yB_z-SiO₂The film has optimal properties.

As can be seen from the above description of the specific exemplary embodiments of the present invention, the stripe-type magnetic thin film of the present invention has high orientation, high resistivity, and high ferromagnetic resonance frequency, and can improve the inductance density, quality factor, and operating frequency of the inductance element.

Claims

1. A highly oriented, high resistivity, striped magnetic film for use in thin film inductor devices, comprising: the stripe-type magnetic thin film comprises n Fe alternately arranged on a substrate_xCo_yB_zStripes and n dielectric stripes, n is a positive integer and n > 1; wherein the matrix is one of silicon, silicon nitride and gallium nitride, x, y and z are atomic ratio, x is greater than or equal to 5000 and less than or equal to 7000, x is greater than or equal to 2000 and less than or equal to 4000, z is greater than or equal to 2 and less than or equal to 8, the dielectric is selected from solid dielectric silicon dioxide, zinc oxide, boron oxide, aluminum oxide and nitrideSilicon, boron nitride.

2. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: x is more than or equal to 6000 and less than or equal to 6500, x is more than or equal to 3000 and less than or equal to 3500, and z is more than or equal to 3 and less than or equal to 5.

3. The highly oriented, high resistivity striped magnetic film according to claim 1 or 2, wherein: said Fe_xCo_yB_zThe thickness of the stripes is 0.5-2 μm, and the thickness of the dielectric stripes is 0.5-2 μm.

4. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: said Fe_xCo_yB_zThe width of the stripe is 5-50 μm, and the width of the dielectric stripe is 5-50 μm.

5. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: said Fe_xCo_yB_zThe ratio of the sum of the widths of the stripes to the length is 0.1-0.8.

6. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: in the stripe-type magnetic thin film, Fe_xCo_yB_zThe volume percentage of the water-soluble organic fertilizer is 10-80%, preferably 50-80%.

7. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: the substrate is a single-side polished silicon wafer, a single-side polished silicon nitride wafer or a gallium nitride wafer with the thickness of 0.4mm-0.8 mm.

8. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: said Fe_xCo_yB_zThe stripes and the dielectric stripes are the same length.

9. The highly oriented, high resistivity striped magnetic film according to claim 1, wherein: the film has the following magnetic properties: the anisotropy field is 400 +/-50 Oe, and the ferromagnetic resonance frequency is 4.1-4.9 f_rThe resistivity is 1 to 5 [ mu ] omega.m.

10. The method for producing a highly oriented, high resistivity striped magnetic film according to claim 1, wherein:

the preparation method comprises the following steps of:

g. placing the silicon wafer on a heating plate for hardening;

11. The method of manufacturing according to claim 10, wherein: said Fe_xCo_yB_zThe width of the stripe is 5-50 μm, and the SiO is₂The width of the stripe is 5-50 μm.

12. The method of manufacturing according to claim 10, wherein: the thickness of the silicon dioxide film obtained in the step a is 0.5-2 μm.

13. The method of manufacturing according to claim 10, wherein: the width of the mask stripes in the step f is 5-50 μm, and the gaps of the stripes are 5-50 μm.

14. The method of manufacturing according to claim 10, wherein: the width of the silicon dioxide stripes in the step h is 5-50 μm, and the gaps among the silicon dioxide stripes are 5-50 μm.

15. The method of manufacturing according to claim 10, wherein: and h, etching gas used for reactive ion etching is carbon tetrafluoride gas doped with oxygen, wherein the doping amount of the oxygen is more than 12% at.

16. The method of manufacturing according to claim 10, wherein: the target used in the step i is Fe_xCo_yB_zAn alloy target having a purity of more than 99% and a power density of 50W/pi (38cm) at the time of sputtering²～200W/π(38cm)²。

17. The method of manufacturing according to claim 10, wherein: said Fe in said step j_xCo_yB_z-SiO₂Fe in striped film_xCo_yB_zThe volume percentage of the water-soluble organic fertilizer is 10-80%, preferably 50-80%.

18. The method of manufacturing according to claim 10, wherein: the method further comprises, after step i, step i-2: after magnetron sputtering, the stripe type magnetic film is subjected to in-situ annealing treatment, wherein the annealing temperature is 200-400 ℃, and the annealing time is 1 +/-0.5 hour.

19. The method for producing a highly oriented, high resistivity striped magnetic film according to claim 1, wherein:

wherein the substrate is one of a silicon nitride wafer or a gallium nitride wafer, and the dielectric is one of zinc oxide, boron oxide, aluminum oxide, silicon nitride and boron nitride; the preparation method comprises the following steps:

a. cleaning the substrate to remove impurities on the surface of the substrate;

f. putting the substrate on a heating plate for hardening;