CN114381798A - A leakage drainage device of a single crystal furnace and a single crystal furnace - Google Patents
A leakage drainage device of a single crystal furnace and a single crystal furnace Download PDFInfo
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- CN114381798A CN114381798A CN202011124772.8A CN202011124772A CN114381798A CN 114381798 A CN114381798 A CN 114381798A CN 202011124772 A CN202011124772 A CN 202011124772A CN 114381798 A CN114381798 A CN 114381798A
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
Description
技术领域technical field
本发明涉及单晶硅生长技术领域,尤其涉及一种单晶炉泄漏引流装置及单晶炉。The invention relates to the technical field of single crystal silicon growth, in particular to a leakage drainage device for a single crystal furnace and a single crystal furnace.
背景技术Background technique
随着半导体硅晶圆品质的不断提高,对拉晶过程中晶棒的晶体缺陷有了更高的管控要求,影响晶体缺陷的因素主要有两个因素,其一是拉晶工艺参数,用优化的工艺参数去拉晶能制得品质更好的晶棒;其二是热场的结构和性能,其好坏是晶棒品质的先决条件,热场是拉晶炉中至关重要的组成部分,由于拉晶炉拉晶环境要求严苛,对于热场的品质和材质要求极高,不仅要耐高温,热稳定性好,而且纯度要高。通常情况下,热场主要由石墨部件和热毡组成,高强度、热稳定性极佳的石墨部件是热场的核心部件,石墨部件通常是由高纯石墨一体成形,其表面还会镀一层碳化硅镀层,热毡主要起到隔热和定向导热的作用,热毡通常要经过很多道高纯化处理工序,制作过程的繁琐和材质的严格要求使得热场的价格相当昂贵。With the continuous improvement of the quality of semiconductor silicon wafers, there are higher control requirements for the crystal defects of the crystal rods in the crystal pulling process. There are two main factors affecting the crystal defects. One is the crystal pulling process parameters, which are optimized by The second is the structure and performance of the thermal field, which is a prerequisite for the quality of the ingot, and the thermal field is a crucial part of the crystal pulling furnace. , Due to the strict requirements of the crystal pulling environment of the crystal pulling furnace, the quality and material of the thermal field are extremely demanding, not only high temperature resistance, good thermal stability, but also high purity. Usually, the thermal field is mainly composed of graphite parts and thermal felt. The graphite part with high strength and excellent thermal stability is the core part of the thermal field. Layered silicon carbide coating, the thermal felt mainly plays the role of heat insulation and directional heat conduction. The thermal felt usually undergoes many high-purification treatment processes. The cumbersome manufacturing process and strict material requirements make the price of the thermal field quite expensive.
通常情况下,硅溶液置于石英坩埚,石英坩埚外侧由两瓣石墨坩埚包裹,拉晶过程中石英坩埚与硅溶液进行反应,随着拉晶的进行石英坩埚不断被消耗,厚度逐渐变薄,其次石英坩埚与石墨坩埚之间也会发生反应,因此石英坩埚有一定的使用寿命,当出现多次引晶不成功的时候,整个拉晶时间会变长,就有硅溶液泄漏的可能性。而一旦泄漏,对于拉晶炉中其他热场部件将造成难以挽回的巨大损失,比如加热器、坩埚轴等将会被破坏。现有技术中还没有应对硅溶液泄漏情况下的应急储存设备,以致于发生泄漏时大部分热场部件都会被硅溶液侵蚀破坏,这将造成巨大损失。Usually, the silicon solution is placed in a quartz crucible, and the outside of the quartz crucible is wrapped by two graphite crucibles. During the crystal pulling process, the quartz crucible reacts with the silicon solution. Secondly, there will also be a reaction between the quartz crucible and the graphite crucible, so the quartz crucible has a certain service life. When multiple unsuccessful seedings occur, the entire crystal pulling time will become longer, and there is a possibility of silicon solution leakage. And once it leaks, it will cause irreparable huge losses to other thermal field components in the crystal pulling furnace, such as heaters, crucible shafts, etc. will be destroyed. In the prior art, there is no emergency storage device to deal with the leakage of silicon solution, so that when leakage occurs, most of the thermal field components will be eroded and damaged by the silicon solution, which will cause huge losses.
发明内容SUMMARY OF THE INVENTION
为了解决上述技术问题,本发明提供一种单晶炉泄漏引流装置及单晶炉,能够避免硅溶液侵蚀破坏其他热场部件,提高设备应对溢流风险的能力,减少安全隐患甚至事故的发生,减少损失,提高设备的稼动率。In order to solve the above-mentioned technical problems, the present invention provides a leakage drainage device for a single crystal furnace and a single crystal furnace, which can avoid the erosion and damage of other thermal field components by silicon solution, improve the ability of equipment to deal with overflow risks, and reduce potential safety hazards and even accidents. Reduce losses and improve equipment availability.
为了达到上述目的,本发明采用的技术方案是:In order to achieve the above object, the technical scheme adopted in the present invention is:
一种单晶炉泄漏引流装置,用于对单晶炉的坩埚泄漏的硅液进行引流,所述单晶炉包括炉体及设置于所述炉体内的坩埚,所述坩埚的底部连接有坩埚轴;所述单晶炉泄漏引流装置包括:A leakage drainage device for a single crystal furnace is used for draining silicon liquid leaked from a crucible of a single crystal furnace, the single crystal furnace includes a furnace body and a crucible arranged in the furnace body, the bottom of the crucible is connected with the crucible shaft; the leakage drainage device of the single crystal furnace includes:
设置于所述坩埚的底部的防漏盘,所述防漏盘包括盘底面和围绕所述盘底面四周边缘设置的防漏边沿,所述盘底面和所述防漏边沿围设形成用于盛放泄漏液的容置腔;A leak-proof tray arranged at the bottom of the crucible, the leak-proof tray includes a bottom surface of the tray and a leak-proof edge arranged around the surrounding edges of the bottom surface of the tray, and the bottom surface of the tray and the leak-proof edge are formed to contain accommodating cavity for leaking liquid;
连接在所述防漏盘的中部的筒状管,所述筒状管包括中空的内管和套设于所述内管外的外管,所述内管和所述外管之间形成空腔,且所述筒状管包括相对的第一端和第二端,所述第一端连接于所述盘底面的中部,所述空腔在所述第一端开口,形成与所述防漏盘的容置腔相通的进液口,所述筒状管上设有用于将所述泄漏液排出所述空腔外的排液口;A cylindrical tube connected in the middle of the leak-proof plate, the cylindrical tube includes a hollow inner tube and an outer tube sleeved outside the inner tube, and a hollow space is formed between the inner tube and the outer tube. a cavity, and the cylindrical tube includes an opposite first end and a second end, the first end is connected to the middle part of the bottom surface of the disc, the cavity is open at the first end, and is formed with the prevention a liquid inlet that communicates with the accommodating cavities of the leakage tray, and the cylindrical tube is provided with a liquid discharge port for discharging the leakage liquid out of the cavity;
及,轴承套,所述坩埚轴穿设于所述内管内,所述轴承套连接在所述内管与所述坩埚轴之间。And, a bearing sleeve, the crucible shaft is penetrated in the inner tube, and the bearing sleeve is connected between the inner tube and the crucible shaft.
示例性的,所述筒状管与所述防漏盘为一体成型结构。Exemplarily, the cylindrical tube and the leak-proof disc are integrally formed.
示例性的,所述筒状管与所述防漏盘为分体结构,其中所述盘底面中部设有通孔,所述筒状管容置于所述通孔内。Exemplarily, the cylindrical tube and the leak-proof tray are of separate structures, wherein a through hole is provided in the middle of the bottom surface of the tray, and the cylindrical tube is accommodated in the through hole.
示例性的,所述筒状管的第一端与所述盘底面齐平;或者,所述筒状管的第一端低于所述盘底面。Exemplarily, the first end of the cylindrical tube is flush with the bottom surface of the disc; or, the first end of the cylindrical tube is lower than the bottom surface of the disc.
示例性的,所述筒状管的空腔在所述第二端为封闭结构,所述排液口设置在所述外管的侧壁上。Exemplarily, the cavity of the cylindrical tube is a closed structure at the second end, and the liquid discharge port is provided on the side wall of the outer tube.
示例性的,所述排液口上设有阀门。Exemplarily, the liquid discharge port is provided with a valve.
示例性的,所述排液口连接外界泄漏液储存罐。Exemplarily, the liquid discharge port is connected to an external leakage liquid storage tank.
示例性的,所述盘底面上还设有排气口。Exemplarily, an exhaust port is further provided on the bottom surface of the disc.
示例性的,所述防漏盘、所述筒状管及所述轴承套均采用耐腐蚀材质制成。Exemplarily, the leak-proof disc, the cylindrical tube and the bearing sleeve are all made of corrosion-resistant materials.
一种单晶炉,包括如上所述的单晶炉泄漏引流装置。A single crystal furnace includes the leakage drainage device of the single crystal furnace as described above.
本发明所带来的有益效果如下:The beneficial effects brought by the present invention are as follows:
本发明提供的单晶炉泄漏引流装置及单晶炉,该单晶炉泄漏引流装置主要包括防漏盘、筒状管及轴承套,其中轴承套位于筒状管与坩埚轴之间,所述轴承套的内环连接于所述坩埚轴,所述轴承套的外环与所述内管连接,这样,所述防漏盘可以随着坩埚轴上下移动,但不会随坩埚轴的旋转而旋转;所述筒状管的空腔在第一端开口而形成进液口,在筒状管上还设排液口,这样,硅液泄漏时会先流到所述防漏盘,再从所述防漏盘流入所述筒状管的空腔内,经所述排液口排出,这样,就避免了硅溶液侵蚀破坏其他热场部件,减少损失。The single crystal furnace leakage drainage device and the single crystal furnace provided by the present invention mainly include a leakage prevention plate, a cylindrical tube and a bearing sleeve, wherein the bearing sleeve is located between the cylindrical tube and the crucible shaft. The inner ring of the bearing sleeve is connected to the crucible shaft, and the outer ring of the bearing sleeve is connected to the inner tube. In this way, the leak-proof plate can move up and down with the crucible shaft, but will not change with the rotation of the crucible shaft. Rotate; the cavity of the cylindrical tube is opened at the first end to form a liquid inlet, and a liquid discharge port is also set on the cylindrical tube, so that when the silicon liquid leaks, it will first flow to the leak-proof plate, and then from the leak-proof plate. The leak-proof disc flows into the cavity of the cylindrical tube and is discharged through the liquid discharge port, so that the silicon solution is prevented from eroding and damaging other thermal field components, and the loss is reduced.
附图说明Description of drawings
图1表示本发明提供的单晶炉泄漏引流装置在单晶炉内的安装结构示意图;1 shows a schematic diagram of the installation structure of the single crystal furnace leakage drainage device provided by the present invention in the single crystal furnace;
图2表示本发明提供的单晶炉泄漏引流装置的结构示意图;Fig. 2 shows the structural schematic diagram of the leakage drainage device of the single crystal furnace provided by the present invention;
图3表示本发明提供的单晶炉泄漏引流装置的剖面示意图。FIG. 3 is a schematic cross-sectional view of the leakage drainage device for a single crystal furnace provided by the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员所获得的所有其他实施例,都属于本发明保护的范围。To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the protection scope of the present invention.
在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limiting the invention. Furthermore, the terms "first", "second", and "third" are used for descriptive purposes only and should not be construed to indicate or imply relative importance.
本发明提供一种单晶炉泄漏引流装置及单晶炉,能够避免硅溶液侵蚀破坏其他热场部件,提高设备应对溢流风险的能力,减少安全隐患甚至事故的发生,减少损失,提高设备的稼动率。The invention provides a leakage drainage device for a single crystal furnace and a single crystal furnace, which can avoid silicon solution erosion and damage to other thermal field components, improve the ability of equipment to deal with overflow risks, reduce safety hazards and even accidents, reduce losses, and improve equipment performance. Utilization rate.
如图1至3所示,本发明实施例提供的单晶炉泄漏引流装置,用于对单晶炉的坩埚泄漏的硅液进行引流,其中所述单晶炉包括炉体(图中未示意出)及设置于所述炉体内的坩埚10,所述坩埚10的底部连接有坩埚轴20,所述坩埚10的底部还设有坩埚托盘30。所述单晶炉泄漏引流装置包括:防漏盘100、筒状管200及轴承套300,其中所述防漏盘100设置于所述坩埚10的底部,所述防漏盘100包括盘底面110和围绕所述盘底面110四周边缘设置的防漏边沿120,所述盘底面110和所述防漏边沿120围设形成用于盛放泄漏液的容置腔;所述筒状管200连接在所述防漏盘100的中部,所述筒状管200包括中空的内管210和套设于所述内管210外的外管220,所述内管210和所述外管220之间形成空腔230,且所述筒状管200包括相对的第一端和第二端,所述第一端连接于所述盘底面110的中部,所述空腔230在所述第一端开口,形成与所述防漏盘100的容置腔相通的进液口231,所述筒状管200上设有用于将所述泄漏液排出所述空腔230外的排液口241;所述坩埚轴20穿设于所述内管210内,所述轴承套300连接在所述内管210与所述坩埚轴20之间。As shown in FIGS. 1 to 3 , a single crystal furnace leakage drainage device provided in an embodiment of the present invention is used to drain silicon liquid leaked from a crucible of a single crystal furnace, wherein the single crystal furnace includes a furnace body (not shown in the drawings). The bottom of the
本发明提供的单晶炉泄漏引流装置及单晶炉,该单晶炉泄漏引流装置主要包括防漏盘100、筒状管200及轴承套300,其中轴承套300位于筒状管200与坩埚轴20之间,所述轴承套300的内环连接于所述坩埚轴20,所述轴承套300的外环与所述内管210连接,这样,所述防漏盘100可以随着坩埚轴20上下移动,但不会随坩埚轴20的旋转而旋转;所述筒状管200的空腔230在第一端开口而形成进液口231,在筒状管200上还设排液口241,这样,硅液泄漏时会先流到所述防漏盘100,再从所述防漏盘100流入所述筒状管200的空腔230内,经所述排液口241排出,这样,就避免了硅溶液侵蚀破坏其他热场部件,减少损失。In the single crystal furnace leakage drainage device and the single crystal furnace provided by the present invention, the single crystal furnace leakage drainage device mainly includes a
在一些实施例中,所述筒状管200的空腔230的体积大于坩埚10中硅溶液的最大体积,以保证泄漏液不会溢出筒状管200。In some embodiments, the volume of the
此外,在一些实施例中,所述防漏盘100、所述筒状管200及所述轴承套300均采用耐腐蚀材质制成,例如,钼。In addition, in some embodiments, the leak-
此外,在一些实施例中,所述筒状管200与所述防漏盘100可以是一体成型结构;在另一些实施例中,所述筒状管200与所述防漏盘100为分体结构,其中所述盘底面110中部设有通孔,所述筒状管200容置于所述通孔内。In addition, in some embodiments, the
此外,在一些实施例中,所述筒状管200的第一端与所述盘底面110齐平;或者,所述筒状管200的第一端低于所述盘底面110。这样,便于所述防漏盘100内的泄漏液顺利流入所述筒状管200的空腔230内。In addition, in some embodiments, the first end of the
当然可以理解的是,在其他一些实施例中,所述筒状管200的第一端还可以高于所述盘底面110,但是,该高度差应小于或等于所述防漏边沿120的高度,以避免泄漏液从所述防漏盘100内溢出。Of course, it can be understood that, in other embodiments, the first end of the
此外,在一些实施例中,如图所示,所述筒状管200的空腔230在所述第二端为封闭结构,所述排液口241设置在所述外管220的侧壁上,并位于靠近所述第二端的位置。In addition, in some embodiments, as shown in the figures, the
当然可以理解的是,在另一些实施例中,所述排液口241也可以是设置在所述第二端。Of course, it can be understood that, in other embodiments, the
此外,所述排液口241上设有阀门(图中未示出),所述排液口241连接有外界泄漏液储存罐(图中未示出)。In addition, the
这样,该阀门用于控制所述筒状管200的空腔230与外界泄漏液储存罐的连通状态,在正常拉晶过程中,所述阀门处于关闭状态,硅液泄漏时会先流到所述防漏盘100,再从所述防漏盘100流到所述筒状管200,此时炉内压力大于外压,阀门打开,泄漏液顺着阀门流入外界泄漏液储存罐中。In this way, the valve is used to control the communication state between the
此外,在一些实施例中,如图所示,所述盘底面110上还设有排气口130。In addition, in some embodiments, as shown in the figures, the
本发明实施例中还提供了一种单晶炉,包括本发明实施例提供的单晶炉泄漏引流装置。显然,本发明实施例提供的单晶炉也具有本发明实施例提供的单晶炉泄漏引流装置所带来的有益效果,在此不再赘述。The embodiment of the present invention also provides a single crystal furnace, including the leakage drainage device of the single crystal furnace provided by the embodiment of the present invention. Obviously, the single crystal furnace provided by the embodiment of the present invention also has the beneficial effects brought by the leakage drainage device of the single crystal furnace provided by the embodiment of the present invention, which will not be repeated here.
有以下几点需要说明:The following points need to be noted:
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。(1) The accompanying drawings of the embodiments of the present disclosure only relate to the structures involved in the embodiments of the present disclosure, and other structures may refer to general designs.
(2)为了清晰起见,在用于描述本公开的实施例的附图中,层或区域的厚度被放大或缩小,即这些附图并非按照实际的比例绘制。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”或者可以存在中间元件。(2) In the drawings for describing the embodiments of the present disclosure, the thicknesses of layers or regions are exaggerated or reduced for clarity, ie, the drawings are not drawn on actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element, or Intermediate elements may be present.
(3)在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。(3) The embodiments of the present disclosure and the features in the embodiments may be combined with each other to obtain new embodiments without conflict.
以上,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (10)
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