CN114295256A - Pressure sensor based on FBAR structure and preparation method thereof - Google Patents
Pressure sensor based on FBAR structure and preparation method thereof Download PDFInfo
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- CN114295256A CN114295256A CN202111580991.1A CN202111580991A CN114295256A CN 114295256 A CN114295256 A CN 114295256A CN 202111580991 A CN202111580991 A CN 202111580991A CN 114295256 A CN114295256 A CN 114295256A
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Abstract
The invention discloses a pressure sensor based on an FBAR (film bulk acoustic resonator) structure, which relates to the technical field of sensors and comprises a substrate, wherein the top of the substrate is provided with a groove, and the surface of the substrate is covered with an insulating layer; the insulating layer and the groove on the top of the substrate surround to form an air cavity; the insulating layer is covered with a supporting layer, and the supporting layer is provided with a piezoelectric oscillation stack; the bottom of the substrate is also provided with a back groove; the packaging structure also comprises a packaging cover cap, wherein the packaging cover cap is arranged on the top of the substrate in a bonding manner; the bottom of the packaging cap is provided with a groove for accommodating the piezoelectric layer and the top electrode; the packaging cap is also provided with a through hole which penetrates through the packaging cap from top to bottom, the inner wall of the through hole is covered with a metal seed layer, and through hole metal is filled in the through hole. The invention also discloses a preparation method of the pressure sensor. The sensor can cause the deformation of the piezoelectric oscillation stack on the front surface of the substrate by applying pressure to the groove on the back of the substrate, thereby changing the output frequency of the piezoelectric oscillation stack and realizing the conversion of mechanical signals into electric signals.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor based on an FBAR structure and a preparation method thereof.
Background
At present, the structure of the micro-pressure sensor mainly includes a capacitance type, a piezoresistive type, a mechanical resonance type, and the like. The piezoresistive micro pressure sensor and the capacitive micro pressure sensor have wide application in pressure sensors, the sensitivity of the piezoresistive micro pressure sensor and the capacitive micro pressure sensor is 0.01-1 mV/(V.kPa) and 0.1-100fF/kPa respectively, and the output signal is an analog quantity electric signal. Compared with piezoresistive sensors and capacitive sensors, the frequency signals of pressure sensors manufactured by using acoustic wave device structures (such as FBAR, SAW and the like) have higher detection precision and accuracy, which also means that the sensors have higher resolution; at the same time, such sensors can be better used in passive wireless sensor systems.
Film Bulk Acoustic Resonators (FBARs) are widely used in wireless communication terminals such as mobile phones, have the advantages of low insertion loss, high sensitivity, high operating frequency, low power consumption, and the like, and mainly have an air gap type, a solid assembly type, and a diaphragm type. The solid assembly structure is formed by alternately superposing high-impedance acoustic layers and low-impedance acoustic layers to form Bragg reflecting layers, and sound waves are reflected for multiple times at impedance interfaces to form standing waves, so that the sound waves are limited in the piezoelectric oscillation stack. The diaphragm type structure is simple, but the support of the substrate to the piezoelectric oscillation stack is weak, and the large-scale production difficulty is large. The air gap type structure can improve the structural stability and reduce the difficulty of the production process, and can be used for manufacturing a micro-pressure sensor, but the sensitivity of the substrate under the cavity of the conventional air gap structure to pressure can be reduced due to the thickness.
Disclosure of Invention
The present invention is directed to a pressure sensor based on FBAR structure and a method for manufacturing the same, so as to solve the above problems in the related art.
In order to achieve the purpose, the invention provides the following technical scheme:
a pressure sensor based on an FBAR structure comprises a substrate, wherein the top of the substrate is provided with a groove, and the surface of the substrate is covered with an insulating layer; the insulating layer and the groove on the top of the substrate are surrounded to form an air cavity; the insulating layer is covered with a supporting layer, a piezoelectric oscillation stack is arranged on the supporting layer, the piezoelectric oscillation stack is of a sandwich structure, and the piezoelectric oscillation stack sequentially comprises a bottom electrode, a piezoelectric layer and a top electrode from bottom to top; the bottom electrode covers the supporting layer; the bottom of the substrate is also provided with a back groove; the packaging structure also comprises a packaging cover cap, wherein the packaging cover cap is arranged on the top of the substrate in a bonding manner; the width of the packaging cover cap is smaller than that of the substrate, and the bottom electrode electrical signal leading-out end is exposed outside the packaging cover cap; the bottom of the packaging cap is provided with a groove for accommodating the piezoelectric layer and the top electrode; the packaging cap is further provided with a through hole which penetrates through the packaging cap from top to bottom, the inner wall of the through hole is covered with a metal seed layer, and through hole metal is filled in the through hole.
As a further scheme of the invention: the substrate is made of a high-resistance silicon wafer; the depth of the groove at the top of the substrate is 1-30 μm.
As a still further scheme of the invention: the insulating layer is made of SiO2The thickness of the insulating layer is 0.3-0.6 μm.
As a still further scheme of the invention: the supporting layer is made of Si3N4And the thickness of the supporting layer is 0.3-1 μm.
As a still further scheme of the invention: the bottom electrode material is Mo, the thickness is 100-200nm, and the surface roughness is 1-10 nm.
As a still further scheme of the invention: the piezoelectric layer is made of AlN, the thickness of the piezoelectric layer is 1-2 mu m, and the surface roughness of the piezoelectric layer is 1-10 nm.
As a still further scheme of the invention: the top electrode material is Mo, the thickness is 100-200nm, and the surface roughness is 1-10 nm.
As a still further scheme of the invention: the packaging cover cap and the substrate are directly bonded by a wafer or bonded by a wafer with an intermediate material; the packaging cap material is Si or glass.
The preparation method of the pressure sensor based on the FBAR structure comprises a substrate process, a packaging cap process, bonding of a substrate and a packaging cap, thinning of the packaging cap, preparation of a through hole on the packaging cap, filling of the through hole, preparation of a groove at the bottom of the substrate and etching of the packaging cap to expose a bottom electrode of the piezoelectric oscillation stack; the substrate process comprises the steps of preparing a groove on the top of a substrate, preparing an insulating layer, filling a sacrificial layer material, thinning and polishing the sacrificial layer, and preparing a piezoelectric stack; the packaging cap process comprises a step.
As a still further scheme of the invention: the method comprises the following steps:
1) wet etching or dry etching a groove on the top of the high-resistance silicon wafer substrate, wherein the depth is 1-30 mu m;
2) preparation of SiO by LPCVD or thermal oxidation2As an insulating layer, the thickness is 0.3-0.6 μm;
3) filling PSG or Ni in the groove as a sacrificial layer;
4) thinning the sacrificial layer material by using a CMP process, and polishing to obtain a surface roughness of 1-10 nm;
5) preparation of Si by PECVD or LPCVD3N4As a support layer, the thickness is 0.3-1 μm;
6) preparing a bottom electrode by using a magnetron sputtering process, wherein the bottom electrode is made of Mo, the thickness is 100-200nm, the surface roughness is 1-10nm, and patterning is performed by using an RIE (reactive ion etching) process;
7) preparing a piezoelectric layer by utilizing a magnetron sputtering process, wherein the piezoelectric layer is made of AlN, the thickness of the piezoelectric layer is 1-2 mu m, and the surface roughness of the piezoelectric layer is 1-10 nm;
8) preparing a top electrode by magnetron sputtering, wherein the top electrode is made of Mo, the thickness is 100-200nm, the surface roughness is 1-10nm, and patterning is carried out by using an RIE (reactive ion etching) process;
9) utilizing a process combining ICP dry etching and TMAH wet etching to finish the imaging of the piezoelectric layer;
10) etching the sacrificial layer release through hole by using an ion beam etching process;
11) removing the sacrificial layer material by using corrosive liquid or corrosive gas to form an air chamber;
12) preparing a step of the packaging cap by using a wet etching or dry etching process;
13) bonding the substrate and the encapsulation cap together;
14) thinning and polishing the packaging cap by using a CMP (chemical mechanical polishing) process;
15) etching or corroding a through hole on the back surface of the packaging cover cap by using a dry etching or wet etching process;
16) filling a metal seed layer in the through hole obtained in the step 15);
17) filling through hole metal in the through hole by using an electroplating process, and thinning and polishing the surface;
18) etching the bottom of the substrate by a dry method or a wet method to form a back groove;
19) and removing redundant materials of the packaging cap by dry etching to expose the bottom electrode of the piezoelectric oscillation stack.
Compared with the prior art, the invention has the following beneficial effects:
the pressure sensor based on the FBAR structure provided by the invention can cause the deformation of the piezoelectric oscillation stack on the front surface of the substrate by applying pressure to the groove on the back of the substrate, thereby changing the output frequency of the piezoelectric oscillation stack, realizing the conversion of mechanical signals into electric signals, and having the advantages of small measuring range, high sensitivity, good temperature stability, high mechanical strength, high response speed, capability of being used for wireless signal transmission and the like.
Drawings
Fig. 1 is a schematic structural diagram of a pressure sensor based on an FBAR structure.
Fig. 2 is a flow chart of a manufacturing process of a pressure sensor based on an FBAR structure.
Fig. 3 is a schematic structural view of a substrate after processing in step 1) of the method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 4 is a schematic structural view of a substrate after processing in step 2) of a method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 5 is a schematic structural view of a substrate after processing in step 3) of the manufacturing method of the pressure sensor based on the FBAR structure.
Fig. 6 is a schematic structural view of a substrate after processing in step 4) of the pressure sensor manufacturing method based on the FBAR structure.
Fig. 7 is a schematic structural view of a substrate after processing in step 5) of the pressure sensor based on the FBAR structure.
Fig. 8 is a schematic structural view of the substrate after processing in step 6) of the pressure sensor based on the FBAR structure.
Fig. 9 is a schematic structural view of a substrate after processing in step 7) of the pressure sensor based on the FBAR structure.
Fig. 10 is a schematic structural view of a substrate after processing in step 8) of the pressure sensor based on the FBAR structure.
Fig. 11 is a schematic structural view of a substrate after processing in step 11) of the pressure sensor based on the FBAR structure.
Fig. 12 is a schematic view of a package cap structure processed in step 12) of a method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 13 is a schematic structural view of a pressure sensor based on FBAR structure after processing in step 13).
Fig. 14 is a schematic structural view of a pressure sensor based on FBAR structure after processing in step 14).
Fig. 15 is a schematic structural view of a pressure sensor based on FBAR structure after processing in step 15).
Fig. 16 is a schematic structural view of a sensor after processing in step 16) of a method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 17 is a schematic structural view of a sensor after processing in step 17) of a method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 18 is a schematic structural view of a sensor after processing in step 18) of a method for manufacturing a pressure sensor based on an FBAR structure.
Fig. 19 is a schematic structural view of a sensor after processing in step 19) of a method for manufacturing a pressure sensor based on an FBAR structure.
Notations for reference numerals: 1-substrate, 2-insulating layer, 3-supporting layer, 4-bottom electrode, 5-piezoelectric layer, 6-top electrode, 7-packaging cap, 8-metal seed layer, 9-through hole metal, 10-air cavity and 11-back groove.
Detailed Description
The present invention will be described in detail with reference to the following embodiments, wherein like or similar elements are designated by like reference numerals throughout the several views, and wherein the shape, thickness or height of the various elements may be expanded or reduced in practice. The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention. Any obvious modifications or variations can be made to the present invention without departing from the spirit or scope of the present invention.
Example 1
Referring to fig. 1, in an embodiment of the present invention, a pressure sensor based on an FBAR structure includes a substrate 1, preferably, the substrate is a silicon wafer with a high-resistance (100) crystal orientation, a groove is formed in a top of the substrate 1, a depth of the groove is 1 to 30 μm, an insulating layer 2 is covered on a surface of the substrate 1, preferably, the insulating layer 2 is made of SiO material2、Si3N4Etc.; further, the material of the insulating layer 2 is SiO prepared by LPCVD or thermal oxidation process2The thickness of the insulating layer 2 is 0.3-0.6 μm; the insulating layer 2 and the groove on the top of the substrate 1 surround to form an air cavity 10; the insulating layer 2 is covered with a support layer 3, preferably, the support layer 3 is made of Si prepared by PECVD or LPCVD3N4The thickness of the supporting layer 3 is 0.3-1 μm; the piezoelectric vibrating pile is arranged on the supporting layer 3, is of a sandwich structure and sequentially comprises a bottom electrode 4, a piezoelectric layer 5 and a top electrode 6 from bottom to top; the bottom electrode 4 covers the supporting layer 3; preferably, the materials of the bottom electrode 4 and the top electrode 6 adopt Ti, Pt, Al, Mo, A mu and the like; the piezoelectric layer 5 adopts AlN, AlScN, ZnO, PZT or LiNbO3、LiTaO3An isopressing material; further, the bottom electrode 4 is made of Mo, the thickness is 100-200nm, and the surface roughness is 1-10 nm; the piezoelectric layer 5 is made of AlN, the thickness is 1-2 mu m, and the surface roughness is 1-10 nm; the top electrode 6 is made of Mo, the thickness is 100-200nm, and the surface roughness is 1-10 nm; the bottom of the substrate 1 is also provided with a back groove 11;
the packaging structure further comprises a packaging cap 7, and the packaging cap 7 is mounted on the top of the substrate 1 in a bonding mode; preferably, a wafer direct bonding or a wafer bonding with an intermediate material is adopted between the packaging cap 7 and the substrate 1, and the packaging cap 7 is made of Si or glass; the width of the packaging cap 7 is smaller than that of the substrate 1, and the electrical signal leading-out end of the bottom electrode 4 is exposed outside the packaging cap 7; the bottom of the packaging cap 7 is provided with a groove for accommodating the piezoelectric layer 5 and the top electrode 6; the packaging cap 7 is further provided with a through hole which penetrates through the packaging cap up and down, the inner wall of the through hole is covered with a metal seed layer 8, through hole metal 9 is further filled in the through hole, and preferably, the through hole metal 9 is made of Ti, Cmu or W and the like.
The sensor can cause the deformation of the piezoelectric oscillation stack on the front surface of the substrate 1 by applying pressure to the back groove 11 of the substrate 1, thereby changing the output frequency of the piezoelectric oscillation stack, realizing the conversion of mechanical signals into electric signals, and having the advantages of small measuring range, high sensitivity, good temperature stability, high mechanical strength, high response speed, capability of being used for wireless signal transmission and the like.
Example 2
Referring to fig. 2 to 19, based on embodiment 1, the method for manufacturing a pressure sensor based on an FBAR structure includes a substrate process, a packaging cap process, bonding a substrate and a packaging cap, thinning the packaging cap, forming a through hole on the packaging cap, filling the through hole, forming a groove at the bottom of the substrate, and etching the packaging cap to expose a bottom electrode of a piezoelectric oscillation stack; the substrate process comprises the steps of preparing a groove on the top of a substrate, preparing an insulating layer, filling a sacrificial layer material, thinning and polishing the sacrificial layer and preparing a piezoelectric stack; the packaging cap process comprises the steps of preparing; the method specifically comprises the following steps:
1) wet etching a groove on the top of a silicon wafer substrate 1 with high (100) crystal orientation, wherein the depth is 1-30 mu m;
2) preparation of SiO by LPCVD or thermal oxidation2The thickness of the insulating layer 2 is 0.3-0.6 μm;
3) filling PSG or Ni in the groove as a sacrificial layer;
4) thinning the sacrificial layer material by using a CMP process, and polishing to obtain a surface roughness of 1-10 nm;
5) preparation of Si by PECVD or LPCVD3N4As the support layer 3, the thickness is 0.3-1 μm;
6) preparing a bottom electrode 4 by using a magnetron sputtering process, wherein the material of the bottom electrode 4 is Mo, the thickness is 100-200nm, the surface roughness is 1-10nm, and patterning is performed by using an RIE (reactive ion etching) process;
7) preparing a piezoelectric layer 5 by utilizing a magnetron sputtering process, wherein the piezoelectric layer 5 is made of AlN, the thickness is 1-2 mu m, and the surface roughness is 1-10 nm;
8) preparing a top electrode 6 by magnetron sputtering, wherein the top electrode 6 is made of Mo, the thickness is 100-200nm, the surface roughness is 1-10nm, and patterning is carried out by RIE (reactive ion etching) process;
9) the patterning of the piezoelectric layer 5 is completed by utilizing a process combining dry etching, wet etching or dry and wet methods;
10) etching the sacrificial layer release through hole by using an ion beam etching process;
11) removing the sacrificial layer material using an etching liquid or an etching gas to form an air chamber 10;
12) preparing a step of the packaging cap 7 by using a wet etching or dry etching process;
13) bonding the substrate 1 and the package cap 7 together;
14) the packaging cap 7 is thinned and polished by using a CMP process;
15) etching or corroding a through hole on the back surface of the packaging cover cap 7 by using a dry etching or wet etching process;
16) filling a metal seed layer 8 in the through hole obtained in the step 15);
17) filling through hole metal 9 in the through hole by using an electroplating process, and thinning and polishing the surface;
18) etching the bottom of the substrate 1 by a dry method or a wet method to form a back groove 11;
19) and removing redundant materials of the packaging cap by dry etching to expose the bottom electrode 4 of the piezoelectric oscillation stack.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A pressure sensor based on an FBAR structure comprises a substrate (1), and is characterized in that the top of the substrate (1) is provided with a groove, and the surface of the substrate (1) is covered with an insulating layer (2); the insulating layer (2) and the groove on the top of the substrate (1) surround to form an air cavity (10); the insulating layer (2) is covered with a supporting layer (3), a piezoelectric oscillation stack is arranged on the supporting layer (3), the piezoelectric oscillation stack is of a sandwich structure, and the piezoelectric oscillation stack sequentially comprises a bottom electrode (4), a piezoelectric layer (5) and a top electrode (6) from bottom to top; the bottom electrode (4) covers the supporting layer (3); the bottom of the substrate (1) is also provided with a back groove (11);
the packaging structure also comprises a packaging cover cap (7), wherein the packaging cover cap (7) is bonded and installed on the top of the substrate (1); the width of the packaging cap (7) is smaller than that of the substrate (1), and the electrical signal leading-out end of the bottom electrode (4) is exposed outside the packaging cap (7); the bottom of the packaging cap (7) is provided with a groove for accommodating the piezoelectric layer (5) and the top electrode (6); the packaging cap (7) is further provided with a through hole which penetrates through the packaging cap from top to bottom, the inner wall of the through hole is covered with a metal seed layer (8), and through hole metal (9) is filled in the through hole.
2. The pressure sensor based on FBAR structure as claimed in claim 1, wherein the substrate (1) is made of high-resistance silicon wafer, and the depth of the groove on the top of the substrate (1) is 1-30 μm.
3. The FBAR structure-based pressure sensor according to claim 1, characterized in that the insulating layer (2) is made of SiO2The thickness of the insulating layer (2) is 0.3-0.6 μm.
4. The FBAR-based structure of claim 1The pressure sensor is characterized in that the supporting layer (3) is made of Si3N4The thickness of the supporting layer (3) is 0.3-1 μm.
5. The pressure sensor based on FBAR structure as claimed in claim 1, wherein the bottom electrode (4) is made of Mo with a thickness of 100-200nm and a surface roughness of 1-10 nm.
6. The FBAR structure-based pressure sensor according to claim 1, wherein the piezoelectric layer (5) is of AlN, 1-2 μm thick and 1-10nm surface roughness.
7. The pressure sensor based on FBAR structure as claimed in claim 1, wherein the top electrode (6) material is Mo, thickness is 100-200nm, and surface roughness is 1-10 nm.
8. The FBAR structure-based pressure sensor according to claim 1, wherein the encapsulation cap (7) is bonded to the base (1) by a direct wafer bond or a wafer bond with an intermediate material; the packaging cap (7) is made of Si or glass.
9. A method for manufacturing a pressure sensor based on FBAR structure as claimed in any of claims 1 to 8, comprising a substrate process, a packaging cap process, a bonding of the substrate and the packaging cap, a thinning of the packaging cap, a via hole on the packaging cap, a filling of the via hole, a recess on the bottom of the substrate and an etching of the packaging cap to expose the bottom electrode of the piezoelectric oscillation stack;
the substrate process comprises the steps of preparing a groove on the top of a substrate, preparing an insulating layer, filling a sacrificial layer material, thinning and polishing the sacrificial layer, and preparing a piezoelectric stack; the packaging cap process comprises a step.
10. The method of manufacturing the pressure sensor based on the FBAR structure of claim 9, comprising the steps of:
1) wet etching or dry etching a groove with the depth of 1-30 mu m on the top of the high-resistance silicon wafer substrate (1);
2) preparation of SiO by LPCVD or thermal oxidation2As an insulating layer (2), with a thickness of 0.3-0.6 μm;
3) filling PSG or Ni in the groove as a sacrificial layer;
4) thinning the sacrificial layer material by using a CMP process, and polishing to obtain a surface roughness of 1-10 nm;
5) preparation of Si by PECVD or LPCVD3N4As a support layer (3), the thickness is 0.3-1 μm;
6) preparing a bottom electrode (4) by using a magnetron sputtering process, wherein the bottom electrode (4) is made of Mo, has the thickness of 100-200nm and the surface roughness of 1-10nm, and is patterned by using an RIE (reactive ion etching) process;
7) preparing a piezoelectric layer (5) by utilizing a magnetron sputtering process, wherein the piezoelectric layer (5) is made of AlN, the thickness is 1-2 mu m, and the surface roughness is 1-10 nm;
8) preparing a top electrode (6) by magnetron sputtering, wherein the top electrode (6) is made of Mo, has the thickness of 100-200nm and the surface roughness of 1-10nm, and is patterned by RIE etching process;
9) the patterning of the piezoelectric layer (5) is completed by utilizing a process combining dry etching, wet etching or dry and wet methods;
10) etching the sacrificial layer release through hole by using an ion beam etching process;
11) removing the sacrificial layer material using an etching liquid or an etching gas to form an air chamber (10);
12) preparing a step of the packaging cap (7) by using a wet etching or dry etching process;
13) bonding the substrate (1) and the encapsulation cap (7) together;
14) thinning and polishing the packaging cap (7) by using a CMP process;
15) etching or corroding a through hole on the back surface of the packaging cap (7) by using a dry etching or wet etching process;
16) filling a metal seed layer (8) in the through hole obtained in the step 15);
17) filling through hole metal (9) in the through hole by using an electroplating process, and thinning and polishing the surface;
18) carrying out dry etching or wet etching on the bottom of the substrate (1) to form a back groove (11);
19) and removing redundant materials of the packaging cap by dry etching to expose the bottom electrode (4) of the piezoelectric oscillation stack.
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| CN119388448A (en) * | 2025-01-03 | 2025-02-07 | 苏州航凯微电子技术有限公司 | Multi-dimensional force touch self-adaptive grabbing smart hand control system and control method |
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| CN119388448A (en) * | 2025-01-03 | 2025-02-07 | 苏州航凯微电子技术有限公司 | Multi-dimensional force touch self-adaptive grabbing smart hand control system and control method |
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Application publication date: 20220408 |