CN102374909A - Micromachine-based electromagnetic excitation resonant pressure sensor - Google Patents
Micromachine-based electromagnetic excitation resonant pressure sensor Download PDFInfo
- Publication number
- CN102374909A CN102374909A CN2010102514995A CN201010251499A CN102374909A CN 102374909 A CN102374909 A CN 102374909A CN 2010102514995 A CN2010102514995 A CN 2010102514995A CN 201010251499 A CN201010251499 A CN 201010251499A CN 102374909 A CN102374909 A CN 102374909A
- Authority
- CN
- China
- Prior art keywords
- resonator
- pressure sensor
- pressure
- silicon
- resonators
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005284 excitation Effects 0.000 title claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229920006332 epoxy adhesive Polymers 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 4
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 2
- 238000004146 energy storage Methods 0.000 claims 2
- 238000009461 vacuum packaging Methods 0.000 claims 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 21
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000004377 microelectronic Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
一种基于微机械的电磁激励谐振式压力传感器，涉及微机械传感技术，传感器上有三组谐振器，谐振器由压力膜上的锚点固支，并置于框架的对角线上，谐振器上有电极。加有激励信号的谐振器在外加磁场的作用下由磁场力激振，当外界有待测压力时，压力膜上产生应变，应变通过锚点传递到谐振器上改变谐振器的刚度，从而改变谐振器的固有频率，检测拾振电极输出信号的频率即可测量外界待测压力的大小。传感器有两种封装方式，都采用了热膨胀系数与单晶硅基本相同的陶瓷环进行应力隔离。本发明传感器的谐振器工作于水平振动模态；用差动输出抑制了温度等外界因素引起的漂移，提高了灵敏度；采用浓硼扩散自停止腐蚀技术释放谐振器，工艺简单，一致性好。
An electromagnetically excited resonant pressure sensor based on micromechanics, involving micromechanical sensing technology, there are three groups of resonators on the sensor, the resonators are fixed by anchor points on the pressure film, and placed on the diagonal of the frame, resonant There are electrodes on the device. The resonator with the excitation signal is excited by the magnetic field force under the action of an external magnetic field. When there is a pressure to be measured outside, a strain is generated on the pressure film, and the strain is transmitted to the resonator through the anchor point to change the stiffness of the resonator, thereby changing The natural frequency of the resonator can measure the external pressure to be measured by detecting the frequency of the output signal of the vibration pickup electrode. The sensor is packaged in two ways, both using a ceramic ring with a thermal expansion coefficient substantially the same as that of monocrystalline silicon for stress isolation. The resonator of the sensor of the invention works in a horizontal vibration mode; the drift caused by external factors such as temperature is suppressed by differential output, and the sensitivity is improved; the resonator is released by the self-stop corrosion technology of concentrated boron diffusion, and the process is simple and the consistency is good.
Description
Technical field
The invention belongs to the micromechanics field of sensing technologies, relate to a kind of electric magnetization resonance beam type pressure transducer based on micro-electronic mechanical skill (MEMS).
Background technology
Resonance beam type pressure transducer all is to comprise pressure sensitive film resonant beam two parts; Pressure sensitive film can produce strain when extraneous testing pressure changes; Strain is passed to the rigidity that resonator can change resonator; Thereby change the frequency of resonator, the change of frequency that detects resonator can obtain the size of extraneous testing pressure.
Utilize the Microstructure Silicon Resonant Beam Pressure Sensors of MEMS fabrication techniques, up to the present mainly adopt monocrystalline silicon and polycrystalline silicon material to be made.The micromechanical silicon resonance type pressure transducer is mainly used in the measurement of high-precision pressure, because it has frequency output, and is easy to carry out digitized processing; Adopt MEMS technology, the sensor realization is microminiaturized, integrated being easy to produced in batches thereby can make.
Adopt single crystal silicon material to make the resonance beam of pressure transducer, adopt resonance beam and pressure membrane separately to make more, through bonding techniques it is become one at last.Its shortcoming is that bonding is introduced bonding stress easily, can reduce the stability of sensor; In addition, the bonding technology process is comparatively complicated.
Adopt polycrystalline silicon material to make the resonance beam of pressure transducer, adopt surface processing technique to carry out the processing of resonance beam more at pressure membrane superficial growth polysilicon.Its shortcoming is that resonance beam is prone to produce mechanical couplings with pressure membrane, and the surface processing technique process is very complicated.
In addition, when external environment variation (except that air pressure changes), resonance type pressure sensor also can produce output, promptly produces drift, thereby influences the stability of sensor.
Summary of the invention
The objective of the invention is to disclose a kind of electric magnetization resonance type pressure sensor,, improve the performance of sensor to solve the problems referred to above that prior art exists based on micromechanics.
For achieving the above object, technical solution of the present invention is:
A kind of electric magnetization resonance type pressure sensor based on micromechanics, it comprises anchor point (2), resonator (3), pressure sensitive film (4) and framework (5), wherein:
Level is provided with pressure sensitive film (4) at framework (5) madial wall middle part; On a diagonal line of pressure sensitive film (4); Be positioned at pressure sensitive film (4) upper surface middle part and be provided with two anchor points (2), two anchor points (2) upper end is connected with many group resonators (3) with the cornerwise end points of corresponding framework (5) upper end;
The end to end straight line setting of many group resonators (3), be cross-placed on framework (5), anchor point (2), anchor point (2), framework (5) between, move towards to overlap with an above-mentioned diagonal line of pressure sensitive film (4);
The drive end of many group resonators (3) is electrically connected with driving circuit, another pick-up end, and the resonance frequency of output resonator is electrically connected with testing circuit.
Described pressure transducer, its said many group resonators (3) are three groups, structure is identical, is two beams or four beam tuning fork structures, is H shape or two H parallel shape; Resonator (3) upper surface is installed with electrode, and electrode one end is that drive end is electrically connected with driving circuit, and the other end is the pick-up end, is electrically connected with testing circuit.
Described pressure transducer, the resonator of its said four beam tuning fork structures (3), the electrode that its upper surface sets firmly takes the shape of the letter U, and two ends are positioned at the same side.
Described pressure transducer, its said anchor point (2), pressure sensitive film (4) material are monocrystalline silicon; Resonator (3) and framework (5) are the dense boron diffusion silicon (101) of tape insulation dielectric layer; Insulating medium layer is the double hyer insulation material that monox (102) and silicon nitride (103) are formed.
A kind of method for packing of described pressure transducer, it is a Can Vacuum Package method, comprises step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover the member on the base (10) with pipe cap (16), adopt store energy welding or epoxy adhesive the joint to be sealed affixed;
E) tail pipe from pipe cap (16) is evacuated pipe cap chamber (17), adopt the technology of colding pressing the sealing of pipe cap (16) tail pipe place, thereby whole sensor chip (11) just is sealed in the vacuum chamber (17), gets finished product.
A kind of method for packing of described pressure transducer, it is silicon lid Vacuum Package method, comprises step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover on electric magnetization resonance type pressure sensor chip (11) with silicon lid (18); In vacuum chamber with bonding or adhesive bonding method; Silicon lid (18) lower periphery and framework (5) upper surface are fixed as one, be sealed in resonator (3) in the annular seal space (17) of silicon lid (18);
E) cover the pipe cap (16) of no tail pipe again in the top of silicon lid (18), pipe cap (16) covers the member on the base (10), and employing store energy welding or epoxy adhesive seal affixed to the joint, get product.
The method for packing of described pressure transducer, its two kinds of method for packing have all adopted the thermal expansivity stupalith identical with single crystal silicon material to isolate thermal stress.
The invention has the advantages that:
Diffuse si material resonator: beam film one, avoid the bonding technology process, thereby avoided the introducing of bonding stress;
Dense boron diffusion etch stop technology discharges resonator: technology is simple, high conformity;
The structural design of three groups of beams (wherein put the beams in place and be spare beam in one group of limit): adopt two groups of beams to carry out difference output, the drift that environmental factors such as reduction temperature cause;
The resonator diagonally opposing corner is placed: discharge resonator when being convenient to anisotropic etch;
Resonator structure has adopted the tuning-fork type design: the mechanical quality factor that improves resonator.
Description of drawings
Fig. 1 is an electric magnetization resonance type pressure sensor chip top view;
Fig. 2 is an electric magnetization resonance type pressure sensor A-A ' cross-sectional view;
Fig. 3 is two kinds of resonator figure of electric magnetization resonance type pressure sensor;
Fig. 4 be on two kinds of resonators of electric magnetization resonance type pressure sensor for carrying out the distribution of electrodes figure that exciting and pick-up design;
Fig. 5 is the manufacture craft process flow diagram of electric magnetization resonance type pressure sensor;
Fig. 6 (a) is the Can encapsulation step synoptic diagram of electric magnetization resonance type pressure sensor;
Fig. 6 (b) is the silicon lid Vacuum Package step synoptic diagram of electric magnetization resonance type pressure sensor;
Fig. 7 is the diagrammatic cross-section that bonding has the silicon lid on the electric magnetization resonance type pressure sensor.
Embodiment
To combine the accompanying drawing explanation detailed in addition below to the present invention.
Like Fig. 1 is the embodiment that the present invention is based on the electric magnetization resonance type pressure sensor of micro-electronic mechanical skill (MEMS); Comprise three groups of identical resonators 3, pressure sensitive film 4, anchor point 2 and framework 5, sensor chip adopts MEMS technology on monocrystalline substrate 1, to be made.
Resonator material is the dense boron diffusion silicon of tape insulation medium.The insulating medium material adopts silicon nitride or silicon dioxide.Because the anisotropy that is shown in the wet etching of monocrystalline silicon, three groups of resonators 3 have adopted the mode that is on the diagonal line that 45 ° of diagonally opposing corners are distributed in square sensor chip, like Fig. 1, thereby are easy to the release of resonator; Resonator is supported by anchor point 2 and framework 5 respectively, like Fig. 2.
Like Fig. 2, when there was testing pressure in the external world, pressure sensitive film 4 can produce strain, is delivered on the resonator 3 through anchor point 2, makes the stiffness change of resonator, thereby changed the natural frequency of resonator.Natural frequency through detecting resonator changes, and just can record the size of extraneous testing pressure.
Like Fig. 3; Resonator design two kinds of tuning-fork type girder constructions; Two beams are formed " H " the simple duplex tuning fork structure 301 of type and by two " H " four beam tuning fork structures 302 that the type beam is formed, the tuning fork structure resonator is coupled vibrational energy; Reduce the wastage, thus the mechanical quality factor of raising sensor.
Like Fig. 4, sputter has metal electrode on the resonator, when resonator places vertical magnetic field, adds drive signal at the drive end of resonator electrode 3011, excitation resonator vibration under the effect of electromagnetic force, and in other end pick-up, the resonance frequency of output resonator.Resonator for four beam tuning fork structures; Add pumping signal at drive end, because " U " shape of electrode design makes two groups of " H " beams receive reciprocal electromagnetic force; Thereby suppress the homophase horizontal vibration mode of resonator, thus make sensor stably resonance in anti-phase horizontal vibration mode.
With resonator 301 formula sensor chips is example, and the manufacture craft flow process of electric magnetization micromachine resonant pressure transducer of the present invention is described, like Fig. 5:
1) monocrystalline silicon piece is mixed, at the dense diffused layer of boron 101 of superficial growth; At diffuse si superficial growth insulation course (silica 1 02 and silicon nitride 103);
2) window is left at the photoetching back side, adopts the oxide layer and the nitration case at the reactive ion etching back side; Adopt reaction ion deep etching etching diffusion silicon layer;
3) adopt lift-off prepared front electrode.Leave electrode window through ray in positive photoetching; Splash-proofing sputtering metal film 105; Remove photoresist 104, obtain electrode;
4) window is left in the photoetching front, adopts the oxide layer and the nitration case at the reactive ion etching back side; Adopt reaction ion deep etching etching diffusion silicon layer;
5) adopt dense boron diffusion etch stop technology to discharge resonator, simultaneously the attenuate pressure sensitive film.
Two kinds of packaged types have been adopted in the encapsulation that the present invention is based on the electric magnetization resonance type pressure sensor of micro-electronic mechanical skill (MEMS): Can encapsulation and silicon lid Vacuum Package.
See Fig. 6 (a), the Can encapsulation step is:
See Fig. 6 (b), silicon lid Vacuum Package step is:
At first in vacuum chamber, become one silicon lid 18 and electric magnetization resonance type pressure sensor chip 11 bondings (or bonding) that the present invention is based on micro-electronic mechanical skill (MEMS), be sealed in resonator in the annular seal space 17; Magnet 12 and ceramic ring 13 are installed on the base that has bobbin 14 10, are adopted epoxy adhesive bonding; Chip 11 and silicon are installed on ceramic ring 13 are covered the integral body of 18 bondings, can adopt glass solder welding or thin tackifier bonding; Adopt the spun gold ball bond, with electrode and the bobbin 14 on the spun gold 15 connection chips 11; Cover the pipe cap 16 of no tail pipe, after employing store energy welding or epoxy adhesive seal, get product.Fig. 7 the present invention is based on the diagrammatic cross-section that bonding on the electric magnetization resonance type pressure sensor chip 11 of micro-electronic mechanical skill (MEMS) has silicon lid 18 among Fig. 6 (b).
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102514995A CN102374909A (en) | 2010-08-11 | 2010-08-11 | Micromachine-based electromagnetic excitation resonant pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102514995A CN102374909A (en) | 2010-08-11 | 2010-08-11 | Micromachine-based electromagnetic excitation resonant pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102374909A true CN102374909A (en) | 2012-03-14 |
Family
ID=45793845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102514995A Pending CN102374909A (en) | 2010-08-11 | 2010-08-11 | Micromachine-based electromagnetic excitation resonant pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102374909A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103196593A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院电子学研究所 | Resonance type micro-machinery pressure sensor and low-stress assembling method of resonance type micro-mechanical pressure sensor chip |
| CN103808961A (en) * | 2012-11-08 | 2014-05-21 | 中国科学院电子学研究所 | Cantilever part and resonant acceleration sensor using the same |
| CN103900753A (en) * | 2012-12-28 | 2014-07-02 | 中国科学院电子学研究所 | High-precision silicon micro-resonance type gas pressure sensor based on SOI technology |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Piezoresistive Vibration Pickup Microresonators, Excitation/Pickup Circuits, and Pressure Sensors |
| CN109824007A (en) * | 2019-01-31 | 2019-05-31 | 清华大学 | An on-chip stress isolation structure for microelectromechanical devices and design method thereof |
| CN110793705A (en) * | 2019-09-21 | 2020-02-14 | 蚌埠市力业传感器有限公司 | Resonance pressure transmitter |
| CN111180436A (en) * | 2020-01-22 | 2020-05-19 | 北京新雷能科技股份有限公司 | Double-layer packaging structure of hybrid integrated circuit and manufacturing method thereof |
| CN111498792A (en) * | 2020-04-22 | 2020-08-07 | 西北工业大学 | Rigidity adjusting method of MEMS device |
| CN112484900A (en) * | 2020-12-12 | 2021-03-12 | 西安交通大学 | Quartz resonant pressure sensor with integrated push-pull structure |
| CN112816736A (en) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | Stress isolation structure, micro-mechanical detection structure and MEMS inertia measurement device |
| CN112880887A (en) * | 2021-01-12 | 2021-06-01 | 北京航空航天大学 | Vacuum-packaged graphene resonant optical fiber pressure sensor and manufacturing method thereof |
| CN112875637A (en) * | 2021-04-07 | 2021-06-01 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN114275730A (en) * | 2021-11-17 | 2022-04-05 | 电子科技大学 | Magnetic vibrator coupling resonance type micro-nano weighing device and preparation method thereof |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
| CN118687746A (en) * | 2024-08-01 | 2024-09-24 | 江苏奥力威传感高科股份有限公司 | Integrated surface differential metal film structure quartz resonant pressure sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050279175A1 (en) * | 2004-06-17 | 2005-12-22 | Yokogawa Electric Corporation | Silicon resonant type pressure sensor |
| CN1986385A (en) * | 2006-12-22 | 2007-06-27 | 北京航空航天大学 | A "middle" shaped resonant silicon micromechanical pressure sensor |
-
2010
- 2010-08-11 CN CN2010102514995A patent/CN102374909A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050279175A1 (en) * | 2004-06-17 | 2005-12-22 | Yokogawa Electric Corporation | Silicon resonant type pressure sensor |
| CN1986385A (en) * | 2006-12-22 | 2007-06-27 | 北京航空航天大学 | A "middle" shaped resonant silicon micromechanical pressure sensor |
Non-Patent Citations (4)
| Title |
|---|
| 史晓晶等: "一种新型微机械谐振式压力传感器研究", 《传感技术学报》 * |
| 陈德勇: "微机械谐振梁压力传感器研究", 《中国优秀博硕士学位论文全文数据库（博士）信息科技辑》 * |
| 陶家渠等: "《硅微机械传感器》", 30 September 2003, 中国宇航出版社 * |
| 高振宁等: "电磁激励微谐振式传感器的设计与制作", 《微纳电子技术》 * |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809450B (en) * | 2012-08-09 | 2014-08-27 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103808961B (en) * | 2012-11-08 | 2016-04-13 | 中国科学院电子学研究所 | Cantilever part and apply its resonant mode acceleration transducer |
| CN103808961A (en) * | 2012-11-08 | 2014-05-21 | 中国科学院电子学研究所 | Cantilever part and resonant acceleration sensor using the same |
| CN103900753B (en) * | 2012-12-28 | 2017-03-08 | 中国科学院电子学研究所 | A kind of high precision silicon micro-resonance type baroceptor based on SOI technology |
| CN103900753A (en) * | 2012-12-28 | 2014-07-02 | 中国科学院电子学研究所 | High-precision silicon micro-resonance type gas pressure sensor based on SOI technology |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103196593A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院电子学研究所 | Resonance type micro-machinery pressure sensor and low-stress assembling method of resonance type micro-mechanical pressure sensor chip |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
| CN105136350B (en) * | 2015-05-15 | 2017-11-21 | 中北大学 | A kind of near-field coupling wireless and passive superhigh temperature pressure sensor and preparation method thereof |
| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Piezoresistive Vibration Pickup Microresonators, Excitation/Pickup Circuits, and Pressure Sensors |
| CN109824007A (en) * | 2019-01-31 | 2019-05-31 | 清华大学 | An on-chip stress isolation structure for microelectromechanical devices and design method thereof |
| CN110793705A (en) * | 2019-09-21 | 2020-02-14 | 蚌埠市力业传感器有限公司 | Resonance pressure transmitter |
| CN111180436A (en) * | 2020-01-22 | 2020-05-19 | 北京新雷能科技股份有限公司 | Double-layer packaging structure of hybrid integrated circuit and manufacturing method thereof |
| CN111498792A (en) * | 2020-04-22 | 2020-08-07 | 西北工业大学 | Rigidity adjusting method of MEMS device |
| CN112484900B (en) * | 2020-12-12 | 2021-12-28 | 西安交通大学 | An integrated push-pull structure quartz resonant pressure sensor |
| CN112484900A (en) * | 2020-12-12 | 2021-03-12 | 西安交通大学 | Quartz resonant pressure sensor with integrated push-pull structure |
| CN112816736A (en) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | Stress isolation structure, micro-mechanical detection structure and MEMS inertia measurement device |
| CN112880887A (en) * | 2021-01-12 | 2021-06-01 | 北京航空航天大学 | Vacuum-packaged graphene resonant optical fiber pressure sensor and manufacturing method thereof |
| CN112880887B (en) * | 2021-01-12 | 2021-10-26 | 北京航空航天大学 | Vacuum-packaged graphene resonant optical fiber pressure sensor and manufacturing method thereof |
| CN112875637A (en) * | 2021-04-07 | 2021-06-01 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN112875637B (en) * | 2021-04-07 | 2024-03-12 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN114275730A (en) * | 2021-11-17 | 2022-04-05 | 电子科技大学 | Magnetic vibrator coupling resonance type micro-nano weighing device and preparation method thereof |
| CN114275730B (en) * | 2021-11-17 | 2023-09-26 | 电子科技大学 | Magnetic vibrator coupling resonance type micro-nano weighing device and preparation method thereof |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
| CN115790913B (en) * | 2023-02-08 | 2023-06-13 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement accuracy |
| CN118687746A (en) * | 2024-08-01 | 2024-09-24 | 江苏奥力威传感高科股份有限公司 | Integrated surface differential metal film structure quartz resonant pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102374909A (en) | Micromachine-based electromagnetic excitation resonant pressure sensor | |
| CN103900753B (en) | A kind of high precision silicon micro-resonance type baroceptor based on SOI technology | |
| CN108507709B (en) | Preparation method of resonant pressure sensor | |
| CN105203234B (en) | Resonance type pressure sensor | |
| CN103105248B (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| CN102297741B (en) | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems | |
| CN108516518B (en) | Resonant pressure sensor based on piezoresistive detection and preparation method thereof | |
| CN103115720B (en) | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure | |
| CN108254106B (en) | Preparation method of silicon-glass-silicon four-layer structure resonant MEMS pressure sensor | |
| CN107478862B (en) | Quartz vibrating beam accelerometer sensitive chip based on gold bonding | |
| CN107416760A (en) | Be inverted assembling can stress release MEMS chip encapsulating structure preparation method | |
| CN103983395B (en) | A kind of micropressure sensor and preparation thereof and detection method | |
| CN102494813A (en) | Silicon micro-resonant mode pressure sensor based on differential motion structure with coupling beam | |
| CN103217553A (en) | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode | |
| CN102193001A (en) | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof | |
| CN103335751A (en) | A double-harmonic-oscillator silicon micro pressure transducer and a manufacturing method thereof | |
| CN109883581B (en) | A cantilever beam differential resonance pressure sensor chip | |
| CN107512700A (en) | A kind of preparation method of central supported formula MEMS chip encapsulating structure | |
| CN103217228B (en) | Temperature sensor based on capacitive micromachined ultrasonic transducer (CMUT) and preparation and application method of temperature sensor | |
| CN115265850A (en) | Differential rigidity disturbance modal localization high-sensitivity micro-pressure sensor | |
| CN102374915B (en) | A packaging method for electromagnetically driven resonant microstructure pressure sensor | |
| CN119290210B (en) | A pressure sensor sensitive structure | |
| CN113405946B (en) | Micro-electromechanical resonance type viscosity sensor | |
| CN114295256A (en) | Pressure sensor based on FBAR structure and preparation method thereof | |
| CN103196593B (en) | Resonance type micro-machinery pressure sensor and low-stress assembling method of resonance type micro-mechanical pressure sensor chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120314 |