CN114284203A - Method for manufacturing isolation structure with top rounded corner groove - Google Patents
Method for manufacturing isolation structure with top rounded corner groove Download PDFInfo
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- CN114284203A CN114284203A CN202111520625.7A CN202111520625A CN114284203A CN 114284203 A CN114284203 A CN 114284203A CN 202111520625 A CN202111520625 A CN 202111520625A CN 114284203 A CN114284203 A CN 114284203A
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- polymer
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- silicon substrate
- trench isolation
- substrate layer
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- 238000002955 isolation Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 119
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 51
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 9
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 9
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 9
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 claims description 3
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
本申请涉及半导体集成电路制造技术领域，具体涉及一种带有顶部圆角沟槽隔离结构的制造方法。该方法包括以下依次进行的步骤：提供硅衬底层，硅衬底层上定义有沟槽隔离结构窗口；使得聚合物气体流经硅衬底层；使得聚合物气体电离形成聚合物离子，聚合物离子沉积在沟槽隔离结构窗口的表面形成聚合物层；基于表面形成有形成聚合物层的沟槽隔离结构窗口，对硅衬底层进行第一次刻蚀，形成第一浅沟槽结构，第一浅沟槽结构的顶角上覆盖有剩余聚合物层；基于沟槽隔离结构窗口，对硅衬底层进行第二次刻蚀，使得第一浅沟槽结构向下延伸形成沟槽结构；剩余聚合物层对顶角的保护作用降低第二次刻蚀对顶角的刻蚀速率，使得顶角圆角化形成顶部圆角。
The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular, to a manufacturing method of a trench isolation structure with top fillets. The method includes the following steps in sequence: providing a silicon substrate layer on which trench isolation structure windows are defined; allowing polymer gas to flow through the silicon substrate layer; ionizing the polymer gas to form polymer ions, and depositing the polymer ions A polymer layer is formed on the surface of the trench isolation structure window; based on the formation of the trench isolation structure window for forming the polymer layer on the surface, the silicon substrate layer is etched for the first time to form a first shallow trench structure. The top corner of the trench structure is covered with a remaining polymer layer; based on the trench isolation structure window, the silicon substrate layer is etched a second time, so that the first shallow trench structure extends downward to form a trench structure; the remaining polymer layer The protective effect of the layer on the top corners reduces the etching rate of the second etching on the top corners, so that the top corners are rounded to form top corners.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a manufacturing method of a trench isolation structure with a top fillet.
Background
With the development of semiconductor technology, the size of devices in integrated circuits is becoming smaller and smaller, and the manufacturing process of isolation structures is becoming more and more important for realizing high-density and high-performance MOS transistors.
Shallow Trench Isolation (STI) is used to isolate the active regions of adjacent MOS transistors.
In order to improve the isolation effect between the active regions of the devices and improve the leakage current performance of the devices, the Top corners of the trenches are usually rounded to form Top rounded corners (TCR) when the trenches of the shallow trench isolation structure are fabricated. In order to meet the requirements of different products, the top fillet is divided into a small size, a medium size and a large size according to the diameter of the fillet, and the top fillet with the diameter of more than 20nm is a large-size top fillet.
When manufacturing large-size top fillets, the related art generally causes the formed fillets to be either concave or uneven in surface, and makes it difficult to form smooth and convex large-size top fillets.
Disclosure of Invention
The application provides a manufacturing method of a trench isolation structure with a top fillet, which can solve the problem that a large-size top fillet which is smooth and convex is difficult to form in the related art.
In order to solve the technical problems described in the background art, the present application provides a method for manufacturing a trench isolation structure with a rounded top, including the following steps performed in sequence:
providing a silicon substrate layer, wherein a groove isolation structure window is defined on the silicon substrate layer;
flowing a polymer gas through the silicon substrate layer;
ionizing the polymer gas to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer;
performing first etching on the silicon substrate layer based on the groove isolation structure window with the formed polymer layer on the surface to form a first shallow groove structure, wherein the top angle of the first shallow groove structure is covered with the residual polymer layer;
performing second etching on the silicon substrate layer based on the trench isolation structure window, so that the first shallow trench structure extends downwards to form a trench structure;
and the protective action of the residual polymer layer on the top corner reduces the etching rate of the second etching on the top corner, so that the top corner is rounded to form a top rounded corner.
Optionally, the step of providing a silicon substrate layer, where a trench isolation structure window is defined on the silicon substrate layer, includes:
providing a silicon substrate layer;
defining a trench isolation structure window on the silicon substrate layer through a mask structure; and the upper surface of the silicon substrate layer at the position of the trench isolation structure window is exposed.
Optionally, the step of flowing a polymer gas through the silicon substrate layer comprises:
such that when a polymer gas flows through the silicon substrate layer, the polymer gas also flows through the trench isolation structure window.
Optionally, the step of flowing a polymer gas through the silicon substrate layer comprises:
a polymer gas having a fluorocarbon ratio greater than 0.5 is caused to flow through the silicon substrate layer.
Optionally, the polymer gas is any one gas or a combination of gases of trifluoromethane CHF3, difluoromethane CH2F2, perfluorobutadiene C4F6, octafluorocyclopentene C5F8, fluoromethane CH 3F.
Optionally, the step of flowing a polymer gas through the silicon substrate layer comprises:
such that a total flow of polymer gas greater than 150SCCM flows through the silicon substrate layer.
Optionally, the ionizing the polymer gas to form polymer ions, and the polymer ions are deposited on the surface of the trench isolation structure window to form a polymer layer, including:
and applying a power supply to the polymer gas to ionize the polymer gas to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer.
Optionally, the power of the power supply is greater than 1000W.
Optionally, the ionizing the polymer gas to form polymer ions, and the polymer ions are deposited on the surface of the trench isolation structure window to form a polymer layer, including:
and ionizing the polymer gas under the pressure environment of more than 30mT to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer.
The technical scheme at least comprises the following advantages: the polymer gas flows through the silicon substrate layer, the polymer gas is ionized to form polymer ions, the polymer ions are deposited on the surface of the groove isolation structure window to form a polymer layer, the silicon substrate layer is etched twice to form a groove structure in the silicon substrate layer corresponding to the position of the groove isolation structure window, and the vertex angle of the groove is low in etching rate due to the protection effect of the polymer layer, so that the vertex angle is formed into a smooth and convex large-size top fillet.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for fabricating a trench isolation structure with rounded top corners according to an embodiment of the present application;
FIG. 1a is a schematic cross-sectional view of a silicon substrate layer provided by an embodiment of the present application;
FIG. 1b is a schematic cross-sectional diagram illustrating a device formed after step S3 according to an embodiment of the present application is completed;
fig. 1c is a schematic cross-sectional structural diagram of a device after step S4 is completed based on the structure shown in fig. 1b according to an embodiment of the present application;
fig. 1d is a schematic cross-sectional structural diagram of a device after step S5 is completed on the basis of the structure shown in fig. 1c according to an embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a flowchart illustrating a method for manufacturing a trench isolation structure with a top fillet according to an embodiment of the present application, and as can be seen from fig. 1, the method for manufacturing a trench isolation structure with a top fillet includes the following steps S1 to S5, which are performed in sequence, wherein:
step S1: providing a silicon substrate layer, wherein a trench isolation structure window is defined on the silicon substrate layer.
Referring to fig. 1a, a schematic cross-sectional structure diagram of a silicon substrate layer provided by an embodiment of the present application is shown.
As can be seen from fig. 1a, a mask structure 120 is formed on the silicon substrate layer 110, a trench isolation structure window 130 is opened in the mask structure 120, and an upper surface of the silicon substrate layer 110 is exposed from the trench isolation structure window 130.
Optionally, the mask structure 120 includes a silicon oxide layer 121 covering the upper surface of the silicon substrate layer 110, and a hard mask layer 122 covering the silicon oxide layer 121, where the hard mask layer 122 may be made of silicon nitride.
Step S2: a polymer gas is caused to flow through the silicon substrate layer.
When a polymer gas is caused to flow through the silicon substrate layer 110 shown in fig. 1a, the polymer gas also flows through the trench isolation structure window 130.
Optionally, the fluorocarbon ratio in the polymer gas is greater than 0.5, for example, the polymer gas may be any one or combination of gases of trifluoromethane CHF3, difluoromethane CH2F2, perfluorobutadiene C4F6, octafluorocyclopentene C5F8, fluoromethane CH 3F.
In flowing the polymer gas through the silicon substrate layer, a total flow of polymer gas greater than 150SCCM can be flowed through the silicon substrate layer shown in fig. 1 a.
Step S3: and ionizing the polymer gas to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer.
Wherein the step S3 can be performed simultaneously with the step S2, that is, during the process of flowing the polymer gas through the silicon substrate layer, the polymer gas is ionized to form polymer ions, and the polymer ions are deposited on the surface of the trench isolation structure window to form a polymer layer.
In order to increase the ionization efficiency of the polymer ions, a power supply, which may have a power of more than 1000W, may be applied to the polymer gas during its flow through the silicon substrate layer.
To improve the efficiency of the polymer layer deposited on the surface of the trench isolation structure window 130 shown in fig. 1a, the polymer gas can be ionized at a pressure greater than 30mT to form polymer ions, which are deposited on the surface of the trench isolation structure window to form the polymer layer.
Referring to fig. 1b, a schematic cross-sectional structural diagram of a device formed after step S3 is completed according to an embodiment of the present application is shown.
As can be seen in fig. 1b, the polymer layer 140 is formed to cover the bottom, side and top surfaces of the trench isolation structure window 130, i.e. to cover the top surface of the silicon substrate layer 110 exposed at the location of the trench isolation structure window 130, the side surfaces of the mask structure 120 exposed at the location of the trench isolation structure window 130, and the top surface of the mask structure 120 surrounding the trench isolation structure window 130.
Step S4: and etching the silicon substrate layer for the first time based on the groove isolation structure window with the formed polymer layer on the surface to form a first shallow groove structure, wherein the top angle of the first shallow groove structure is covered with the residual polymer layer.
Referring to fig. 1c, a schematic cross-sectional structural diagram of a device after step S4 is completed on the basis of the structure shown in fig. 1b according to an embodiment of the present application is shown.
As can be seen from fig. 1c, during this first etch, the polymer layer 140 shown in fig. 1b acts as an etch stop, so that after the first etch, the portion of the polymer layer covering the sides of the trench isolation structure window 130 remains to form a remaining polymer layer 141. The polymer layer covering the bottom surface of the trench isolation structure window 130 and the polymer layer covering the periphery of the top surface of the trench isolation structure window 130 are etched and removed, and after the polymer layer covering the bottom surface of the trench isolation structure window 130 is etched and removed, the silicon substrate layer 110 is continuously etched, so that the first shallow trench structure 150 is formed in the silicon substrate layer 110. The first shallow trench structure 150 extends downward from the upper surface of the silicon substrate layer 110, and two sides of the first shallow trench structure 150 form a top corner 160, and the top corner 160 is covered with the residual polymer layer 141.
Step S5: and carrying out second etching on the silicon substrate layer based on the trench isolation structure window, so that the first shallow trench structure extends downwards to form a trench structure.
And the protective action of the residual polymer layer on the top corner reduces the etching rate of the second etching on the top corner, so that the top corner is rounded to form a top rounded corner.
Referring to fig. 1d, it shows a schematic cross-sectional structure of the device after step S5 is completed based on the structure shown in fig. 1c according to an embodiment of the present application.
As can be seen from fig. 1d, this second etching step is performed to continue the etching extending downward on the basis of the first shallow trench structure 150 shown in fig. 1c to form the trench structure 170. In the second etching process, the residual polymer layer 141 in fig. 1c is gradually etched and removed, so that the etching rate of the second etching on the top corner 160 is reduced, and the top corner 160 is rounded to form a top fillet.
It can be seen from the foregoing that, in the present application, the polymer gas flows through the silicon substrate layer, and then the polymer gas is ionized to form polymer ions, the polymer ions are deposited on the surface of the window of the trench isolation structure, and the silicon substrate layer is etched twice to form a trench structure in the silicon substrate layer corresponding to the window of the trench isolation structure, and the top angle of the trench is relatively low in etching rate due to the protection effect of the polymer layer, so that the top angle is rounded to form a large-size top fillet which is smooth and convex.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (9)
1. The manufacturing method of the trench isolation structure with the top fillet is characterized by comprising the following steps in sequence:
providing a silicon substrate layer, wherein a groove isolation structure window is defined on the silicon substrate layer;
flowing a polymer gas through the silicon substrate layer;
ionizing the polymer gas to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer;
performing first etching on the silicon substrate layer based on the groove isolation structure window with the formed polymer layer on the surface to form a first shallow groove structure, wherein the top angle of the first shallow groove structure is covered with the residual polymer layer;
performing second etching on the silicon substrate layer based on the trench isolation structure window, so that the first shallow trench structure extends downwards to form a trench structure;
and the protective action of the residual polymer layer on the top corner reduces the etching rate of the second etching on the top corner, so that the top corner is rounded to form a top rounded corner.
2. The method of manufacturing a trench isolation structure with a rounded top as claimed in claim 1, wherein said step of providing a silicon substrate layer having a trench isolation structure window defined therein comprises:
providing a silicon substrate layer;
defining a trench isolation structure window on the silicon substrate layer through a mask structure; and the upper surface of the silicon substrate layer at the position of the trench isolation structure window is exposed.
3. The method of fabricating a trench isolation structure with rounded top corners as claimed in claim 1 wherein said step of flowing a polymer gas through said silicon substrate layer comprises:
such that when a polymer gas flows through the silicon substrate layer, the polymer gas also flows through the trench isolation structure window.
4. The method of manufacturing a trench isolation structure with rounded top corners as claimed in claim 1 or 3, wherein said step of flowing a polymer gas through said silicon substrate layer comprises:
a polymer gas having a fluorocarbon ratio greater than 0.5 is caused to flow through the silicon substrate layer.
5. The method of claim 4, wherein the polymer gas is any one gas or combination of gases selected from the group consisting of trifluoromethane CHF3, difluoromethane CH2F2, perfluorobutadiene C4F6, octafluorocyclopentene C5F8, fluoromethane CH 3F.
6. The method of fabricating a trench isolation structure with rounded top corners as claimed in claim 1 wherein said step of flowing a polymer gas through said silicon substrate layer comprises:
such that a total flow of polymer gas greater than 150SCCM flows through the silicon substrate layer.
7. The method of claim 1, wherein ionizing the polymer gas to form polymer ions, wherein the step of depositing the polymer ions on the surface of the trench isolation structure window to form a polymer layer comprises:
and applying a power supply to the polymer gas to ionize the polymer gas to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer.
8. The method of claim 1, wherein the power of the power source is greater than 1000W.
9. The method of claim 1, wherein ionizing the polymer gas to form polymer ions, wherein the step of depositing the polymer ions on the surface of the trench isolation structure window to form a polymer layer comprises:
and ionizing the polymer gas under the pressure environment of more than 30mT to form polymer ions, wherein the polymer ions are deposited on the surface of the window of the trench isolation structure to form a polymer layer.
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| CN202111520625.7A CN114284203A (en) | 2021-12-13 | 2021-12-13 | Method for manufacturing isolation structure with top rounded corner groove |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111520625.7A CN114284203A (en) | 2021-12-13 | 2021-12-13 | Method for manufacturing isolation structure with top rounded corner groove |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990074936A (en) * | 1998-03-16 | 1999-10-05 | 윤종용 | Trench element isolation method for semiconductor devices |
| KR20000045464A (en) * | 1998-12-30 | 2000-07-15 | 김영환 | Method for fabricating semiconductor device |
| US6180533B1 (en) * | 1999-08-10 | 2001-01-30 | Applied Materials, Inc. | Method for etching a trench having rounded top corners in a silicon substrate |
| KR20010011001A (en) * | 1999-07-24 | 2001-02-15 | 김영환 | Forming method for trench of semiconductor device |
| KR20050002440A (en) * | 2003-06-30 | 2005-01-07 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
| US20110108861A1 (en) * | 2009-11-09 | 2011-05-12 | 3M Innovative Properties Company | Process for anisotropic etching of semiconductors |
-
2021
- 2021-12-13 CN CN202111520625.7A patent/CN114284203A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990074936A (en) * | 1998-03-16 | 1999-10-05 | 윤종용 | Trench element isolation method for semiconductor devices |
| KR20000045464A (en) * | 1998-12-30 | 2000-07-15 | 김영환 | Method for fabricating semiconductor device |
| KR20010011001A (en) * | 1999-07-24 | 2001-02-15 | 김영환 | Forming method for trench of semiconductor device |
| US6180533B1 (en) * | 1999-08-10 | 2001-01-30 | Applied Materials, Inc. | Method for etching a trench having rounded top corners in a silicon substrate |
| KR20050002440A (en) * | 2003-06-30 | 2005-01-07 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
| US20110108861A1 (en) * | 2009-11-09 | 2011-05-12 | 3M Innovative Properties Company | Process for anisotropic etching of semiconductors |
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