CN114273099B - Atomization spraying structure of nano-imprinting glue by high-pressure gas - Google Patents
Atomization spraying structure of nano-imprinting glue by high-pressure gas Download PDFInfo
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- CN114273099B CN114273099B CN202111617692.0A CN202111617692A CN114273099B CN 114273099 B CN114273099 B CN 114273099B CN 202111617692 A CN202111617692 A CN 202111617692A CN 114273099 B CN114273099 B CN 114273099B
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- 239000003292 glue Substances 0.000 title claims abstract description 47
- 238000005507 spraying Methods 0.000 title claims abstract description 47
- 238000000889 atomisation Methods 0.000 title abstract description 13
- 230000035939 shock Effects 0.000 claims abstract description 22
- 239000007921 spray Substances 0.000 claims abstract description 16
- 239000003595 mist Substances 0.000 claims description 3
- 238000001127 nanoimprint lithography Methods 0.000 claims description 3
- 239000000499 gel Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 62
- 239000003570 air Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000013022 venting Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses an atomization spraying structure of nano-imprinting glue by high-pressure gas, which comprises a horizontal channel, a first ejector, an exhaust mechanism, a spraying device and a sample bearing mechanism. The initially atomized imprint resist enters the horizontal channel through the inlet of the channel. A first injector is disposed within the horizontal channel for injecting a first high pressure gas to form a first shock wave. An exhaust mechanism is disposed within the horizontal passage downstream of the first injector, the exhaust mechanism being internally filled with a gas having a density less than air, the exhaust mechanism having an exhaust portion for upwardly exhausting the gas having a density less than air. A spraying device is arranged downstream of the exhaust mechanism to spray high velocity gas downward. The sample bearing mechanism is positioned below the spraying device. The atomization spraying structure of the nano imprinting glue can further atomize the initially atomized imprinting glue to form smaller fog drops.
Description
Technical Field
The invention relates to the field of nanoimprint, in particular to an atomization spraying structure of nanoimprint glue.
Background
The nanoimprint technology is a technology for transferring a micro-nano structure on a template to a material to be processed by the assistance of photoresist. The imprinting technology is mainly divided into three steps, wherein the first step is the processing of a template. The desired structure is typically fabricated on silicon or other substrates using electron beam etching or the like as a template. The second step is the transfer of the pattern. And coating an imprinting photoresist on the surface of the material to be processed, pressing a template on the surface of the material, and transferring the pattern onto the photoresist in a pressurizing mode. The third step is the processing of the substrate. And (3) solidifying the photoresist by ultraviolet light, then processing by using a chemical etching method, and removing all the photoresist after the processing is finished to finally obtain the high-precision processed material.
In the process of transferring the template and imprinting, the processes of gluing and the like are used. In the existing gluing process, the first is spin coating, the main process is to drop glue solution on the surface of a sample, and the sample is thrown out of the superfluous glue solution on the surface of the sample by adopting high-speed rotation. The second method is spraying, which mainly adopts micro-jet, and sprays micro-glue solution on the surface of the sample through a micro-jet nozzle and the like to form a film.
The first spin coating method firstly causes waste of glue solution, and secondly causes inconsistent glue thickness and poor glue quality at the edge of the sample. In the second spraying mode, the micro-jet is difficult to ensure that the thickness of the adhesive film on the surface of the sample is uniform.
How to atomize the imprint gum sufficiently to uniformly spray onto the nanoimprint template is a technical challenge to be solved by those skilled in the art.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide an atomization spraying structure of nano-imprinting glue by high-pressure gas, which can further atomize the initially atomized imprinting glue to form smaller fog drops.
In order to achieve the above purpose, the embodiment of the invention provides an atomization spraying structure of nano-imprinting glue by adopting high-pressure gas, which comprises a horizontal channel, a first ejector, an exhaust mechanism, a spraying device and a sample bearing mechanism. The horizontal channel has an inlet through which the initially atomized imprinting glue enters the horizontal channel and an outlet. A first injector is disposed within the horizontal channel for injecting a first high pressure gas to form a first shock wave. An exhaust mechanism is disposed within the horizontal passage downstream of the first injector, the exhaust mechanism being internally filled with a gas having a density less than air, the exhaust mechanism having an exhaust portion for upwardly exhausting the gas having a density less than air. A spraying device is arranged downstream of the exhaust mechanism for spraying high velocity gas downward. The sample bearing mechanism is positioned below the spraying device and is used for placing a sample to be sprayed with the imprinting glue.
In one or more embodiments of the present invention, the atomized spray structure for nanoimprint resist using high pressure gas further includes a second injector disposed between the spray device and the downstream of the first injector, the second injector being filled with a second high pressure gas, the second injector being configured to inject the second high pressure gas to form a second shock wave.
In one or more embodiments of the present invention, the atomized spraying structure of the nano imprinting glue using high pressure gas further includes a flow guiding mechanism disposed between the first injector and the spraying device and located in the horizontal channel, and the flow guiding mechanism is used for guiding the atomized glue to the sample carrying mechanism.
In one or more embodiments of the present invention, the exhaust mechanism is an air cushion, and the exhaust part is an air hole on the surface of the air cushion.
In one or more embodiments of the invention, the first injector has a first switch and the second injector has a second switch.
In one or more embodiments of the present invention, the atomized spraying structure of the nanoimprint lithography apparatus using high pressure gas further includes a flow guiding mechanism. The flow guiding mechanism is arranged between the first ejector and the second ejector and is positioned in the horizontal channel, and the arrangement position and the orientation of the flow guiding mechanism enable atomized glue to be guided to meet the second shock wave. The flow directing means may comprise a ramp or curved surface structure extending obliquely downwardly from the top wall of the horizontal channel, for example in the form of a parabola.
In one or more embodiments of the invention, the height of the horizontal channel is between 4mm and 8 mm. The pressure of the first high-pressure gas and the second high-pressure gas is between 3MPa and 30 MPa.
In one or more embodiments of the invention, the spray device has a gas inlet and a plurality of spray orifices.
In one or more embodiments of the present invention, a spindle is provided on the sample carrying mechanism for rotating the sample carrying mechanism.
Compared with the prior art, according to the atomization spraying structure of the nano imprinting glue adopting high-pressure gas, the initially atomized imprinting glue passes through the inlet of the horizontal channel, and the high-pressure gas is sprayed one or more times, so that the high-pressure gas is utilized to rapidly expand to generate shock waves, the atomized glue solution drops are further reduced in size and are introduced above a sample to be glued. In addition, a spraying device is arranged above the sample bearing mechanism, and the vertical air flow sprayed by the spraying device is used for pressing down the horizontal air flow, so that atomized glue solution is uniformly deposited on the surface of the sample. In addition, the setting of pivot can make and treat the high-speed rotation of rubberizing sample, makes the dripping of glue solution more even.
Drawings
FIG. 1 is an overall schematic view of an atomized spray configuration of nanoimprint resist employing high pressure gas according to an embodiment of the present invention;
fig. 2 is a schematic view of an atomized imprinting glue coating sample to be glued according to an embodiment of the invention.
The main reference numerals illustrate:
1-inlet, 2-channel, 4-first injector, 12-second injector, 18-spray device.
Detailed Description
The following detailed description of embodiments of the invention is, therefore, to be taken in conjunction with the accompanying drawings, and it is to be understood that the scope of the invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations thereof such as "comprises" or "comprising", etc. will be understood to include the stated element or component without excluding other elements or components.
As described in the background, how to atomize the imprint gum sufficiently to uniformly spray onto the nanoimprint template is a technical problem that needs to be solved by those skilled in the art. The invention utilizes one or more ejectors to jet high-pressure gas to form shock waves so as to further scatter and refine the initially atomized imprinting glue and form the nano imprinting glue in the form of fog drops with smaller grain size, thereby being capable of being more uniformly sprayed on the patterned structure of the imprinting template.
As shown in fig. 1, the atomized spray structure of the nanoimprint resist according to an embodiment of the present invention includes a channel 2. The channel 2 is arranged substantially horizontally and has an inlet 1 and an outlet 20. A first injector 4 is provided in the channel 2, the first injector 4 being filled with a first high pressure gas 5. The first high-pressure gas may be nitrogen, or may be a gas such as hydrogen or argon. The first injector 4 is for injecting a first high pressure gas 5 to form a first shock wave. The mixed gas of the initial atomization imprinting glue and air, nitrogen or argon is obtained by ultrasonic wave or flushing wave, and the mixed gas enters the channel 2 from the inlet 1. Upon moving into the vicinity of the first injector 4, the mixed gas may expand instantaneously due to the shock wave formed by the first high pressure gas 5 within the first injector 4, causing the mixed gas to be further atomized into smaller droplets.
In particular, in an embodiment, the first injector 4 may preferably be arranged near the inlet 1 of the channel 2 and provided at the upper wall 7 of the channel 2. The first injector 4 may be provided with a first switch 6. The first switch 6 may be controlled by a solenoid valve or the like so as to be periodically turned on and off, and the switching frequency is not limited. With the momentary opening and closing of the switch, a shock wave is formed in the vicinity of the injection position of the first injector 4 (i.e., the first position 3). When the initially atomized imprint gum gas enters the channel 2 through the inlet 1 and moves to the first position 3, the first ejector 4 is operated due to the opening and closing of the first switch 6, so that a shock wave is formed near the first position 3. The initially atomized imprint gum gas will expand instantaneously under the impact of shock waves, causing the gas to further atomize into smaller droplets.
An exhaust means 9 is also provided in the channel 2 downstream of the first injector 4, the interior of the exhaust means 9 being filled with a gas having a density less than air. The exhaust mechanism 9 has an exhaust portion for exhausting the gas having a density less than that of air upward. In an embodiment, the venting mechanism 9 may be an air cushion and the venting portion may be a vent hole provided in the surface of the air cushion. The purpose of this venting means 9 is to avoid that mist droplets of the imprint resist fall under gravity during operation in the channel 2. The venting means 9 may be arranged below the first location 3 to avoid that the expanded mixed gas falls to the lower wall of the channel 2.
In an embodiment, a second injector 12 may also be provided downstream of the first injector 4. The second ejector is filled with a second high pressure gas, and is used for ejecting the second high pressure gas to form a second shock wave. The second high-pressure gas may be nitrogen, or may be a gas such as hydrogen or argon. The second ejector 12 is for ejecting a second high pressure gas 13 to form a second shock wave. When the imprint-gum mixture gas further atomized by the first ejector 4 flows near the ejection port of the second ejector 12, the second shock wave causes the mixture gas to expand instantaneously, causing the mixture gas to be atomized into smaller droplets in a further step.
In particular, in an embodiment, the second injector 12 may preferably be arranged at the lower wall of the channel 2. The second injector 12 may be provided with a second switch 14. The second switch 14 may be controlled by a solenoid valve or the like so as to be periodically turned on and off, and the switching frequency is not limited. With the momentary opening and closing of the switch, the second gas 13 filled in the second ejector 12 is released and forms a shock wave in the vicinity of the ejection position of the second ejector 12 (i.e., the second position 11). When the imprint lithography-adhesive gas mixture further atomized by the first injector 4 moves to the second position 11, the imprint lithography-adhesive gas mixture instantaneously expands under the action of shock waves, causing the gas to be atomized into smaller droplets in a further step.
Preferably, the direction of the jet of the second jet 11 is directed towards the space between the spraying device 18 and the sample carrier 15.
In an embodiment, without the provision of the second ejector 12, a flow guiding mechanism 10 may be provided between the first ejector 4 and the spraying device 18 for guiding the atomized imprint resist to the space between the spraying device 18 and the sample carrying mechanism 15. In case a second injector 12 is provided, the guiding means 10 may be provided between the first injector 4 and the second injector 12 within the channel 2. Preferably, the deflector mechanism 10 is arranged between the first position 3 and the second position 11. The deflector mechanism 10 is arranged and oriented such that atomized glue is directed to meet the second shock wave. In one example, the flow directing mechanism 9 may include a ramp structure extending obliquely downward from the upper wall 7 of the channel 2 to form a tortuous air passage 8 within the channel 2.
A spraying device 18 for spraying high-velocity gas downward is arranged downstream of the second ejector 12. The shower has a gas inlet 19 and a plurality of spray nozzles. A sample carrying mechanism 15 is located below the spraying device 18, and the upper surface of the sample carrying mechanism is used for placing a sample to be sprayed with imprinting glue. The sample may be, for example, an imprint template 17.. The imprinting glue droplets after multiple atomization are guided into the space between the spraying device 18 and the sample bearing mechanism 15 under the action of the flow guiding mechanism 9. The spraying device 18 is connected to the gas inlet 19 via a lance. A single gas or a mixed gas of hydrogen, nitrogen, argon and the like is introduced from the gas inlet 19. The gas is sprayed out from one or more nozzles of the spraying device 18 at a high speed and flows downwards, and the stamping glue mist drops after multiple atomization are vertically and downwards guided to flow to the upper surface of the sample bearing mechanism 15 in a parallel jet manner. In one example, the flow rate of the ejected high velocity gas may be between 60 and 90 meters/minute.
The sample support means 15 is preferably provided with a spindle 16 for rotating the sample support means 15. By the arrangement, the atomized imprinting glue can be more uniformly dropped on the surface of the sample under the drive of high-speed air flow sprayed by the spraying device 18. In one example, the spindle 16 may be disposed at a lower portion of the sample support mechanism 15 and may rotate at 200-500rpm.
The mixed gas (high-pressure gas, gas for spraying, etc.) finally flows out of the channel 2 from the outlet 20.
As shown in fig. 2, the sample to be glued may be, for example, an imprint template 17. The imprint template 17 includes a substrate and a patterned imprint structure disposed on the substrate. The initially atomized imprint resist gradually fills in droplets into the patterned structure, particularly the enclosed pits 172, through small particles 172 formed after one or more passes of atomization by the shock wave of the high pressure gas, without forming air gaps inside the pits 172.
In summary, according to the atomization spraying structure of the nano imprinting glue using high-pressure gas in the embodiment of the invention, the initially atomized imprinting glue passes through the inlet of the horizontal channel, and the high-pressure gas is sprayed one or more times, so that the high-pressure gas is utilized to rapidly expand to generate shock waves, so that atomized glue solution drops are further reduced in size and introduced above a sample to be glued. In addition, a spraying device is arranged above the sample bearing mechanism, and the vertical air flow sprayed by the spraying device is used for pressing down the horizontal air flow, so that atomized glue solution is uniformly deposited on the surface of the sample. In addition, the setting of pivot can make and treat the high-speed rotation of rubberizing sample, makes the dripping of glue solution more even.
References herein to "horizontal", "vertical", etc. are not absolute concepts in a mathematical sense that are at an angle of 0 degrees or 90 degrees to the horizontal, and errors within a certain range are still within the scope of the present invention.
The foregoing descriptions of specific exemplary embodiments of the present invention are presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application to thereby enable one skilled in the art to make and utilize the invention in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (9)
1. An atomized spraying structure of nano-imprinting glue using high-pressure gas, comprising:
a horizontal channel having an inlet through which the initially atomized imprint resist enters and an outlet through which the initially atomized imprint resist enters;
a first injector disposed within the horizontal channel, the first injector being filled with a first high pressure gas, and the first injector being for injecting the first high pressure gas to form a first shock wave;
an exhaust mechanism disposed within the horizontal passage downstream of the first injector, the exhaust mechanism being internally filled with a gas having a density less than air, the exhaust mechanism having an exhaust portion for upwardly exhausting the gas having a density less than air;
a spraying device; downstream of the exhaust mechanism, the spraying device is used for spraying high-speed gas downwards;
the sample bearing mechanism is positioned below the spraying device, and the upper surface of the sample bearing mechanism is used for placing a sample to be sprayed with the imprinting glue; and
a second injector disposed downstream of the first injector and between the spray device, the second injector being filled with a second high pressure gas, the second injector being configured to inject the second high pressure gas to form a second shock wave.
2. The spray coating structure for nano-imprinting glue using high pressure gas according to claim 1, further comprising a flow guiding mechanism disposed between the first injector and the spray device and within the horizontal channel for guiding the atomized glue to the sample carrying mechanism.
3. The atomizing and spraying structure for the nano-imprinting glue using the high-pressure gas according to claim 1, wherein the air exhausting mechanism is an air cushion, and the air exhausting part is an air hole on the surface of the air cushion.
4. The spray-on atomizing structure for nanoimprint resist using high-pressure gas according to claim 1, wherein the first ejector has a first switch, and the second ejector has a second switch.
5. The spray coating structure of nano-imprinting glue using high pressure gas according to claim 1, further comprising a flow guiding mechanism disposed between the first and second ejectors and within the horizontal channel, the flow guiding mechanism being arranged and oriented such that the atomized glue is directed to meet the second shock wave.
6. The spray coating structure for nanoimprint lithography gels using high pressure gas according to claim 5, wherein the flow guiding means is a ramp structure or a curved surface structure including a downward slope extending from a top wall of the horizontal channel.
7. The spray-on-mist structure of nanoimprint resist using high-pressure gas according to claim 1, wherein the height of the horizontal channel is between 4mm and 8 mm.
8. The spray coating structure for nanoimprint lithography paste using high pressure gas according to claim 1, wherein the spray device has a gas inlet and a plurality of spray nozzles.
9. The atomizing and spraying structure for the nano-imprinting glue using the high-pressure gas according to claim 1, wherein a rotating shaft is arranged on the sample carrying mechanism for rotating the sample carrying mechanism.
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| CN202111617692.0A CN114273099B (en) | 2021-12-27 | 2021-12-27 | Atomization spraying structure of nano-imprinting glue by high-pressure gas |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104941833A (en) * | 2015-06-16 | 2015-09-30 | 浙江大学 | Plasma nozzle, spray gun and spray method |
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| US5403617A (en) * | 1993-09-15 | 1995-04-04 | Mobium Enterprises Corporation | Hybrid pulsed valve for thin film coating and method |
| JP2000515417A (en) * | 1996-07-08 | 2000-11-21 | コーニング インコーポレイテッド | Gas-assisted spray device |
| DE10247765A1 (en) * | 2002-10-14 | 2004-04-22 | Robert Bosch Gmbh | Chemical reforming jet for the production of hydrogen on an industrial scale has a low-pressure automotive type fuel injector valve |
| DE102005048489A1 (en) * | 2005-10-07 | 2007-04-19 | Dieter Prof. Dr.-Ing. Wurz | Two-fluid nozzle with annular gap atomization |
| CN101791604A (en) * | 2010-03-18 | 2010-08-04 | 清华大学 | Device and method for spraying liquid material film based on ultrasonic vibration table |
| EP2554273A1 (en) * | 2011-08-02 | 2013-02-06 | Omya Development AG | Atomizing nozzle device and use of the same |
| CN213976091U (en) * | 2020-11-02 | 2021-08-17 | 国投生物能源(铁岭)有限公司 | Material negative pressure conveying device and alcohol manufacturing system |
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