CN114273099A - Atomization spraying structure adopting high-pressure gas for nano-imprinting glue - Google Patents
Atomization spraying structure adopting high-pressure gas for nano-imprinting glue Download PDFInfo
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- CN114273099A CN114273099A CN202111617692.0A CN202111617692A CN114273099A CN 114273099 A CN114273099 A CN 114273099A CN 202111617692 A CN202111617692 A CN 202111617692A CN 114273099 A CN114273099 A CN 114273099A
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- pressure gas
- injector
- glue
- gas
- atomized
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- 239000003292 glue Substances 0.000 title claims abstract description 59
- 238000005507 spraying Methods 0.000 title claims abstract description 37
- 238000000889 atomisation Methods 0.000 title abstract description 14
- 230000035939 shock Effects 0.000 claims abstract description 23
- 239000007921 spray Substances 0.000 claims abstract description 19
- 238000001127 nanoimprint lithography Methods 0.000 claims abstract description 13
- 238000007599 discharging Methods 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000000443 aerosol Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 59
- 239000003570 air Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses an atomization spraying structure of nanoimprint lithography glue by adopting high-pressure gas. The initially atomized impression compound enters the horizontal channel through the entrance of the channel. A first injector is disposed within the horizontal passage for injecting a first high pressure gas to form a first shock wave. An exhaust mechanism is provided in the horizontal passage downstream of the first injector, an interior of the exhaust mechanism being filled with a gas having a density lower than air, the exhaust mechanism having an exhaust portion for discharging the gas having a density lower than air upward. A shower device is disposed downstream of the exhaust mechanism to spray high-speed gas downward. The sample bearing mechanism is positioned below the spraying device. The atomization spraying structure of the nano imprinting glue can further atomize the initially atomized imprinting glue to form smaller droplets.
Description
Technical Field
The invention relates to the field of nano-imprinting, in particular to an atomization spraying structure of nano-imprinting glue.
Background
The nanoimprint technology is a technology for transferring a micro-nano structure on a template to a material to be processed by assistance of photoresist. The imprinting technology is mainly divided into three steps, and the first step is the processing of a template. Generally, electron beam lithography is used to process a desired structure on a silicon or other substrate as a template. The second step is the transfer of the pattern. Coating imprint photoresist on the surface of a material to be processed, pressing a template on the surface of the material, and transferring the pattern onto the photoresist in a pressurizing mode. The third step is the processing of the substrate. And curing the photoresist by using ultraviolet light, then processing by using a chemical etching method, and removing all the photoresist after the processing is finished to finally obtain the high-precision processed material.
In the processes of making a transfer template and imprinting, processes such as gluing and the like are used. In the existing glue coating process, the first process is spin coating, and the main process is to drip glue solution on the surface of a sample and spin the sample at a high speed to throw the redundant glue solution on the surface of the sample out of the sample. The second is spraying, which is mainly to spray micro-glue solution on the surface of a sample by a micro-jet nozzle and the like to form a film.
The first spin coating mode firstly causes waste of glue solution, and secondly, the glue solution is at the edge of a sample, so that the glue thickness is inconsistent and the quality of the glue is poor. In the second spraying mode, the micro-jet flow hardly ensures the uniform thickness of the glue film on the surface of the sample.
How to atomize the imprint glue sufficiently for uniform spraying onto the nano-imprint template is a technical challenge to those skilled in the art to solve.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide an atomization spraying structure of nano imprinting glue by adopting high-pressure gas, which can further atomize the initially atomized imprinting glue to form smaller fog drops.
In order to achieve the above object, an embodiment of the present invention provides an atomization spraying structure of nanoimprint lithography glue using high-pressure gas, including a horizontal channel, a first injector, an exhaust mechanism, a spraying device, and a sample carrying mechanism. The horizontal channel has an inlet through which the initially atomized embossing glue enters and an outlet. A first injector is disposed within the horizontal passage for injecting a first high pressure gas to form a first shock wave. An exhaust mechanism is provided in the horizontal passage downstream of the first injector, an interior of the exhaust mechanism being filled with a gas having a density lower than air, the exhaust mechanism having an exhaust portion for discharging the gas having a density lower than air upward. A shower device is disposed downstream of the exhaust mechanism for injecting high-velocity gas downward. The sample bearing mechanism is positioned below the spraying device and used for placing a sample to be sprayed with the imprinting glue.
In one or more embodiments of the present invention, the atomization spraying structure of the nanoimprint lithography glue using high-pressure gas further includes a second injector disposed downstream of the first injector and between the spraying device, the second injector being filled with second high-pressure gas, and the second injector being configured to inject the second high-pressure gas to form a second shock wave.
In one or more embodiments of the present invention, the atomization spraying structure of the nanoimprint lithography glue using high-pressure gas further includes a flow guide mechanism disposed between the first injector and the spraying device and located in the horizontal channel, and the flow guide mechanism is configured to guide the atomization glue to the sample support mechanism.
In one or more embodiments of the present invention, the air discharging mechanism is an air cushion, and the air discharging portion is an air hole on the surface of the air cushion.
In one or more embodiments of the invention, the first injector has a first switch and the second injector has a second switch.
In one or more embodiments of the present invention, the atomization spraying structure of the nanoimprint lithography glue using high-pressure gas further includes a flow guide mechanism. The flow guide mechanism is arranged between the first ejector and the second ejector and located in the horizontal channel, and the arrangement position and the orientation of the flow guide mechanism enable the atomized glue to be guided to meet the second shock wave. The flow guide means may comprise a ramp or curved structure extending downwardly from the top wall of the horizontal channel, for example in the form of a parabola.
In one or more embodiments of the invention, the height of the horizontal channel is between 4mm and 8 mm. The pressure intensity of the first high-pressure gas and the second high-pressure gas is between 3MPa and 30 MPa.
In one or more embodiments of the invention, the spray device has a gas inlet and a plurality of nozzles.
In one or more embodiments of the present invention, a rotation shaft is disposed on the sample support mechanism for rotating the sample support mechanism.
Compared with the prior art, according to the atomization spraying structure of the nano imprinting glue by adopting the high-pressure gas, the initially atomized imprinting glue passes through the inlet of the horizontal channel, and the high-pressure gas is sprayed once or for multiple times, and the high-pressure gas is utilized to expand rapidly to generate shock waves, so that the atomized glue drops are further reduced and thinned and are introduced above a sample to be glued. In addition, a spraying device is arranged above the sample bearing mechanism, and horizontal air flow is pressed down by vertical air flow sprayed by the spraying device, so that atomized glue solution is uniformly dripped and deposited on the surface of the sample. In addition, the arrangement of the rotating shaft can enable the glue solution to drip more uniformly through the high-speed rotation of the sample to be glued.
Drawings
FIG. 1 is a general schematic view of an atomized spray structure of nanoimprint resist using high-pressure gas according to an embodiment of the invention;
fig. 2 is a schematic view of a sample to be gummed coated with atomized imprinting glue according to an embodiment of the present invention.
Description of the main reference numerals:
1-inlet, 2-channel, 4-first injector, 12-second injector, 18-spray device.
Detailed Description
The following detailed description of the present invention is provided in conjunction with the accompanying drawings, but it should be understood that the scope of the present invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the word "comprise", or variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated element or component but not the exclusion of any other element or component.
As described in the background, how to sufficiently atomize the imprinting adhesive for uniform spraying on the nano-imprinting template is a technical problem that needs to be solved by those skilled in the art. The invention utilizes one or more ejectors to eject high-pressure gas to form shock waves, so as to further break up and thin the initially atomized imprinting glue, and form nanometer imprinting glue in a droplet form with smaller particle size, thereby being capable of being more uniformly sprayed on the patterned structure of the imprinting template.
As shown in fig. 1, the atomized spray structure of nano imprinting glue according to an embodiment of the present invention includes a channel 2. The channel 2 is arranged in a substantially horizontal direction and has an inlet 1 and an outlet 20. A first injector 4 is provided in the passage 2, and the first injector 4 is filled with a first high-pressure gas 5. The first high-pressure gas may be nitrogen, or may be a gas such as hydrogen or argon. The first injector 4 is used to inject a first high-pressure gas 5 to form a first shock wave. A mixture of the initially atomized impression compound with air, nitrogen or argon is obtained by means of ultrasound or shock waves, etc., which enters the channel 2 from the inlet 1. When moving to the vicinity of the first injector 4, the first high-pressure gas 5 in the first injector 4 forms a shock wave, so that the mixed gas expands instantaneously, causing the mixed gas to be further atomized into smaller droplets.
In particular, in an embodiment, the first injector 4 may preferably be arranged near the inlet 1 of the channel 2 and provided at the upper wall 7 of the channel 2. The first injector 4 may be provided with a first switch 6. The first switch 6 can be controlled by a solenoid valve or the like, so that the first switch can be periodically switched, and the switching frequency is not limited. With the momentary opening and closing of the switch, a shock wave is formed near the injection position of the first injector 4 (i.e., the first position 3). When the initially atomized imprinting glue gas enters the channel 2 through the inlet 1 and moves to the first position 3, the first injector 4 is operated due to the opening and closing of the first switch 6, so that a shock wave is formed near the first position 3. The initially atomized imprinting glue gas expands instantaneously upon impact of the shock wave, causing the gas to further atomize into smaller droplets.
An exhaust mechanism 9 is further provided in the passage 2 downstream of the first injector 4, and the inside of the exhaust mechanism 9 is filled with a gas having a density lower than that of air. The exhaust mechanism 9 has an exhaust portion for exhausting the gas having a density lower than that of air upward. In one embodiment, the air discharging mechanism 9 may be an air cushion, and the air discharging portion may be an air discharging hole provided on the surface of the air cushion. The air exhaust mechanism 9 is provided to prevent the droplets of the imprint paste from falling by gravity during the operation in the channel 2. The exhaust mechanism 9 may be disposed below the first position 3 to avoid the expanded mixed gas from falling down to the lower wall of the tunnel 2.
In an embodiment, a second injector 12 may also be provided downstream of the first injector 4. The second ejector is filled with second high-pressure gas and used for ejecting the second high-pressure gas to form second shock waves. The second high-pressure gas may be nitrogen, or may be hydrogen, argon, or the like. The second injector 12 is used to inject a second high-pressure gas 13 to form a second shock wave. When the imprint glue mixed gas further atomized by the first ejector 4 flows through the vicinity of the ejection port of the second ejector 12, the second shock wave causes the mixed gas to expand instantaneously, causing the mixed gas to be further atomized into smaller droplets.
In particular, in an embodiment, the second injector 12 may preferably be arranged in the lower wall of the channel 2. The second ejector 12 may be provided with a second switch 14. The second switch 14 can be controlled by a solenoid valve or the like, so that the second switch can be periodically switched without limitation on the switching frequency. With the momentary opening and closing of the switch, the second gas 13 filled in the second injector 12 is released and forms a shock wave near the injection position of the second injector 12 (i.e., the second position 11). When the stamp glue mixture gas further atomized by the first injector 4 moves to the second position 11, the stamp glue mixture gas expands instantaneously under the action of the shock wave, causing the gas to be further atomized into smaller droplets.
Preferably, the second injector 11 is directed towards the space between the spraying device 18 and the sample support 15.
In an embodiment, in the case where the second injector 12 is not provided, a flow guide mechanism 10 may be provided between the first injector 4 and the spray device 18 for guiding the atomized imprinting glue to a space between the spray device 18 and the sample-carrying mechanism 15. Where a second injector 12 is provided, the flow guide mechanism 10 may be provided between the first injector 4 and the second injector 12 in the passage 2. Preferably, the deflector means 10 is arranged between the first position 3 and the second position 11. The deflector mechanism 10 is positioned and oriented so that the atomized glue is directed to meet the second shock wave. In one example, the flow guide mechanism 9 may include a ramp structure extending obliquely downward from the upper wall 7 of the passage 2 to form the diverting passage 8 in the passage 2.
A shower 18 for spraying high-velocity gas downward is arranged downstream of the second injector 12. The spraying device has a gas inlet 19 and a plurality of nozzles. A sample support 15 is located below the spraying device 18, and the upper surface of the sample support is used for placing a sample to be sprayed with the imprinting adhesive. The sample may be, for example, an imprint template 17. . The imprinting glue droplets atomized for a plurality of times are guided into the space between the spraying device 18 and the sample carrying mechanism 15 under the action of the flow guide mechanism 9. The spray device 18 is connected to the gas inlet 19 via a lance. A single gas or a mixed gas of hydrogen, nitrogen, argon, etc. is injected from the gas inlet 19. The gas is ejected at high velocity from one or more nozzles of the spray device 18 and flows downward, directing the multiple atomized imprinting adhesive droplets vertically downward toward the upper surface of the sample support structure 15 in a parallel jet manner. In one example, the flow velocity of the high-velocity gas ejected may be between 60 and 90 m/min.
A spindle 16 is preferably provided on the sample support 15 for rotating the sample support 15. Through the setting, can make the impression after the atomizing glue fall on the surface of sample more evenly under the drive that makes the high-speed air current that spray set 18 jetted out. In one example, the rotation shaft 16 may be disposed at a lower portion of the sample support mechanism 15, and the rotation speed may be 200 and 500 rpm.
The mixed gas (high-pressure gas, gas for spraying, etc.) finally flows out of the tunnel 2 from the outlet 20.
As shown in fig. 2, the sample to be gummed may be, for example, an imprint template 17. The imprint template 17 comprises a substrate and a patterned imprint structure disposed on the substrate. The initially atomized imprinting paste is gradually filled into the patterned structure, in particular the closed recesses 172, in the form of droplets through small particles 172 formed after one or more times of atomization by the shock wave of the high-pressure gas, without forming air gaps inside the recesses 172.
In summary, according to the atomization spraying structure of the nanoimprint lithography glue using high-pressure gas according to the embodiment of the present invention, the initially atomized nanoimprint lithography glue passes through the inlet of the horizontal channel, and is rapidly expanded by the high-pressure gas through one or more times of spraying the high-pressure gas, so as to generate shock waves, so that the atomized glue solution drops are further reduced in size and thin and are introduced above the sample to be glued. In addition, a spraying device is arranged above the sample bearing mechanism, and horizontal air flow is pressed down by vertical air flow sprayed by the spraying device, so that atomized glue solution is uniformly dripped and deposited on the surface of the sample. In addition, the arrangement of the rotating shaft can enable the glue solution to drip more uniformly through the high-speed rotation of the sample to be glued.
References herein to "horizontal", "vertical", and the like are not to be taken in an absolute sense as being at an angle of 0 degrees or 90 degrees to the horizontal in a mathematical sense, and errors within a certain range are still within the scope of the present invention.
The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application to enable one skilled in the art to make and use various exemplary embodiments of the invention and various alternatives and modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (10)
1. The utility model provides an adopt high-pressure gas's atomizing spraying structure of nanometer impression glue which characterized in that includes:
a horizontal channel having an inlet through which the initially atomized imprinting glue enters and an outlet;
a first injector arranged in the horizontal channel, wherein the first injector is filled with first high-pressure gas and is used for injecting the first high-pressure gas to form a first shock wave;
an exhaust mechanism provided in the horizontal passage and located downstream of the first injector, an interior of the exhaust mechanism being filled with a gas having a density lower than air, the exhaust mechanism having an exhaust portion for discharging the gas having a density lower than air upward;
a spraying device; the spraying device is arranged at the downstream of the exhaust mechanism and is used for downwards spraying high-speed gas; and
and the sample bearing mechanism is positioned below the spraying device, and the upper surface of the sample bearing mechanism is used for placing a sample to be sprayed with the imprinting glue.
2. The atomized spray structure of nanoimprint paste with high-pressure gas as claimed in claim 1, further comprising a second injector disposed downstream of the first injector and between the spray device, the second injector being filled with a second high-pressure gas, the second injector being configured to inject the second high-pressure gas to form a second shock wave.
3. The aerosol spray structure of nanoimprint lithography glue with high pressure gas as claimed in claim 2, further comprising a flow guide mechanism disposed between said first injector and said spray device and within said horizontal channel, the flow guide mechanism for guiding the aerosol to said sample support mechanism.
4. The structure of claim 1, wherein the exhaust mechanism is an air cushion, and the exhaust portion is an air hole on the surface of the air cushion.
5. The aerosol spray structure of nanoimprint lithography glue with high pressure gas as claimed in claim 2, wherein said first sprayer has a first switch, and said second sprayer has a second switch.
6. The structure of claim 2, further comprising a flow guide mechanism disposed between the first and second injectors and within the horizontal channel, the flow guide mechanism being positioned and oriented such that the atomized glue is directed to meet the second shock wave.
7. The aerosol coating structure of nanoimprint lithography glue with high-pressure gas as claimed in claim 6, wherein said flow guide mechanism is a structure including a slope or a curved surface extending obliquely downward from a top wall of said horizontal passage.
8. The aerosol spray structure of nanoimprint lithography glue with high pressure gas as claimed in claim 1, wherein the height of the horizontal passage is between 4mm and 8 mm.
9. The atomized spray structure of nanoimprint lithography glue with high-pressure gas as claimed in claim 1, wherein the spray means has a gas inlet and a plurality of nozzles.
10. The aerosol coating structure of nanoimprint lithography glue with high pressure gas as claimed in claim 1, wherein a rotation shaft is provided on the sample support mechanism for rotating the sample support mechanism.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111617692.0A CN114273099B (en) | 2021-12-27 | 2021-12-27 | Atomization spraying structure of nano-imprinting glue by high-pressure gas |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111617692.0A CN114273099B (en) | 2021-12-27 | 2021-12-27 | Atomization spraying structure of nano-imprinting glue by high-pressure gas |
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| CN114273099A true CN114273099A (en) | 2022-04-05 |
| CN114273099B CN114273099B (en) | 2023-04-28 |
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|---|---|---|---|---|
| US5403617A (en) * | 1993-09-15 | 1995-04-04 | Mobium Enterprises Corporation | Hybrid pulsed valve for thin film coating and method |
| CN1226960A (en) * | 1996-07-08 | 1999-08-25 | 康宁股份有限公司 | Gas-assisted atomizing device |
| US20060060679A1 (en) * | 2002-10-14 | 2006-03-23 | Frank Miller | Atomizing arrangement |
| US20090166448A1 (en) * | 2005-10-07 | 2009-07-02 | Dieter Wurz | Atomizing Nozzle for Two Substances |
| CN101791604A (en) * | 2010-03-18 | 2010-08-04 | 清华大学 | Device and method for spraying liquid material film based on ultrasonic vibration table |
| CN103764295A (en) * | 2011-07-11 | 2014-04-30 | Omya国际股份公司 | Atomizing nozzle device, atomizing process and use |
| CN104941833A (en) * | 2015-06-16 | 2015-09-30 | 浙江大学 | Plasma nozzle, spray gun and spray method |
| CN213976091U (en) * | 2020-11-02 | 2021-08-17 | 国投生物能源(铁岭)有限公司 | Material negative pressure conveying device and alcohol manufacturing system |
-
2021
- 2021-12-27 CN CN202111617692.0A patent/CN114273099B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403617A (en) * | 1993-09-15 | 1995-04-04 | Mobium Enterprises Corporation | Hybrid pulsed valve for thin film coating and method |
| CN1226960A (en) * | 1996-07-08 | 1999-08-25 | 康宁股份有限公司 | Gas-assisted atomizing device |
| US20060060679A1 (en) * | 2002-10-14 | 2006-03-23 | Frank Miller | Atomizing arrangement |
| US20090166448A1 (en) * | 2005-10-07 | 2009-07-02 | Dieter Wurz | Atomizing Nozzle for Two Substances |
| CN101791604A (en) * | 2010-03-18 | 2010-08-04 | 清华大学 | Device and method for spraying liquid material film based on ultrasonic vibration table |
| CN103764295A (en) * | 2011-07-11 | 2014-04-30 | Omya国际股份公司 | Atomizing nozzle device, atomizing process and use |
| CN104941833A (en) * | 2015-06-16 | 2015-09-30 | 浙江大学 | Plasma nozzle, spray gun and spray method |
| CN213976091U (en) * | 2020-11-02 | 2021-08-17 | 国投生物能源(铁岭)有限公司 | Material negative pressure conveying device and alcohol manufacturing system |
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