CN114220725B - 一种电子显微镜 - Google Patents
一种电子显微镜 Download PDFInfo
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- CN114220725B CN114220725B CN202011393110.0A CN202011393110A CN114220725B CN 114220725 B CN114220725 B CN 114220725B CN 202011393110 A CN202011393110 A CN 202011393110A CN 114220725 B CN114220725 B CN 114220725B
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- electron
- electron beam
- detector
- control electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2804—Scattered primary beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2806—Secondary charged particle
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011393110.0A CN114220725B (zh) | 2020-12-02 | 2020-12-02 | 一种电子显微镜 |
PCT/CN2021/135541 WO2022083789A1 (zh) | 2020-12-02 | 2021-12-03 | 一种电子显微镜 |
US17/758,363 US12224153B2 (en) | 2020-12-02 | 2021-12-03 | Electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011393110.0A CN114220725B (zh) | 2020-12-02 | 2020-12-02 | 一种电子显微镜 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114220725A CN114220725A (zh) | 2022-03-22 |
CN114220725B true CN114220725B (zh) | 2024-05-07 |
Family
ID=80695769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011393110.0A Active CN114220725B (zh) | 2020-12-02 | 2020-12-02 | 一种电子显微镜 |
Country Status (3)
Country | Link |
---|---|
US (1) | US12224153B2 (zh) |
CN (1) | CN114220725B (zh) |
WO (1) | WO2022083789A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024152501A1 (zh) * | 2023-01-18 | 2024-07-25 | 纳克微束(北京)有限公司 | 一种双内置复合结构的探测系统 |
CN116631830B (zh) * | 2023-07-20 | 2023-10-27 | 北京惠然肯来科技中心(有限合伙) | 偏转探测系统、探测方法及扫描电子显微镜 |
CN117630073B (zh) * | 2023-12-07 | 2024-12-20 | 屹东光学技术(苏州)有限公司 | 扫描电子显微镜镜筒内二次电子探测方法及系统 |
US12261016B1 (en) | 2024-04-23 | 2025-03-25 | Ciqtek Co., Ltd. | Electron detection device and scanning electron microscope |
CN118098914B (zh) * | 2024-04-23 | 2024-08-27 | 国仪量子技术(合肥)股份有限公司 | 电子探测装置和扫描电镜 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103733299A (zh) * | 2011-09-07 | 2014-04-16 | 株式会社日立高新技术 | 扫描电子显微镜 |
CN207425790U (zh) * | 2017-11-21 | 2018-05-29 | 聚束科技(北京)有限公司 | 一种低能扫描电子显微镜系统 |
CN108231511A (zh) * | 2017-11-21 | 2018-06-29 | 聚束科技(北京)有限公司 | 一种扫描电子显微镜物镜系统及样品探测方法 |
CN110376229A (zh) * | 2019-06-12 | 2019-10-25 | 聚束科技(北京)有限公司 | 具备复合式探测系统的扫描电子显微镜和样品探测方法 |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675524A (en) | 1985-03-11 | 1987-06-23 | Siemens Aktiengesellschaft | Scanning particle microscope with diminished boersch effect |
EP0242602B1 (de) | 1986-04-24 | 1993-07-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Elektrostatisch-magnetische-Linse für Korpuskularstrahlgeräte |
EP0274622B1 (de) | 1986-12-12 | 1990-11-07 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Detektoranordnung mit einem Detektorobjektiv für Korpuskularstrahlgeräte |
US4897545A (en) | 1987-05-21 | 1990-01-30 | Electroscan Corporation | Electron detector for use in a gaseous environment |
US4926054A (en) | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
US4963823A (en) | 1988-06-27 | 1990-10-16 | Siemens Aktiengesellschaft | Electron beam measuring instrument |
US5146090A (en) | 1990-06-11 | 1992-09-08 | Siemens Aktiengesellschaft | Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam |
JP3291880B2 (ja) * | 1993-12-28 | 2002-06-17 | 株式会社日立製作所 | 走査形電子顕微鏡 |
DE69638126D1 (de) | 1995-10-19 | 2010-04-01 | Hitachi Ltd | Rasterelektronenmikroskop |
US5780859A (en) | 1996-02-16 | 1998-07-14 | Act Advanced Circuit Testing Gesellschaft | Electrostatic-magnetic lens arrangement |
JP3434165B2 (ja) | 1997-04-18 | 2003-08-04 | 株式会社日立製作所 | 走査電子顕微鏡 |
DE19732093B4 (de) | 1997-07-25 | 2008-09-25 | Carl Zeiss Nts Gmbh | Korpuskularstrahlgerät |
EP0910108B1 (de) | 1997-09-29 | 2004-11-24 | Advantest Corporation | Elektronenstrahl-Linse |
JP4302316B2 (ja) * | 1998-03-09 | 2009-07-22 | 株式会社日立製作所 | 走査形電子顕微鏡 |
DE19828476A1 (de) | 1998-06-26 | 1999-12-30 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlgerät |
JP4236742B2 (ja) * | 1998-10-29 | 2009-03-11 | 株式会社日立製作所 | 走査形電子顕微鏡 |
KR20000034962A (ko) | 1998-11-19 | 2000-06-26 | 하이든 마틴 | 하전입자의 이중-모드 검출 장치 및 방법 |
EP1022766B1 (en) | 1998-11-30 | 2004-02-04 | Advantest Corporation | Particle beam apparatus |
JP3728956B2 (ja) | 1998-12-22 | 2005-12-21 | 株式会社日立製作所 | 回路パターン検査装置 |
US6642520B2 (en) | 1999-04-13 | 2003-11-04 | Kabushiki Kaisha Topcon | Scanning electron microscope |
US6392231B1 (en) | 2000-02-25 | 2002-05-21 | Hermes-Microvision, Inc. | Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method |
US6960766B2 (en) | 2000-02-25 | 2005-11-01 | Hermes-Microvision, Inc. | Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method |
JP2003068241A (ja) | 2000-11-08 | 2003-03-07 | Seiko Instruments Inc | 走査型電子線装置 |
AU2002330873A1 (en) | 2002-03-21 | 2003-10-08 | Hermes-Microvision (Taiwan) Inc. | Swinging objectif retarding immersion lens electron optics focusing, deflection and signal collection system and method |
US6674075B2 (en) | 2002-05-13 | 2004-01-06 | Applied Materials, Inc. | Charged particle beam apparatus and method for inspecting samples |
DE10233002B4 (de) | 2002-07-19 | 2006-05-04 | Leo Elektronenmikroskopie Gmbh | Objektivlinse für ein Elektronenmikroskopiesystem und Elektronenmikroskopiesystem |
US6825475B2 (en) | 2002-09-19 | 2004-11-30 | Applied Materials Israel, Ltd. | Deflection method and system for use in a charged particle beam column |
JP4167904B2 (ja) | 2003-01-06 | 2008-10-22 | 株式会社日立ハイテクノロジーズ | 電子ビーム描画装置及び電子ビーム描画方法 |
DE10301579A1 (de) | 2003-01-16 | 2004-07-29 | Leo Elektronenmikroskopie Gmbh | Elektronenstrahlgerät und Detektoranordnung |
DE10331137B4 (de) | 2003-07-09 | 2008-04-30 | Carl Zeiss Nts Gmbh | Detektorsystem für ein Rasterelektronenmikroskop und Rasterelektronenmikroskop mit einem entsprechenden Detektorsystem |
KR101041661B1 (ko) | 2003-07-30 | 2011-06-14 | 어플라이드 머티리얼즈 이스라엘 리미티드 | 다중 검출기들을 갖는 스캐닝 전자 현미경 및 다중 검출기기반 이미징을 위한 방법 |
DE602004031817D1 (de) | 2004-01-21 | 2011-04-28 | Integrated Circuit Testing | Strahlenoptische Komponente mit einer teilchenoptischen Linse |
US7141791B2 (en) | 2004-09-07 | 2006-11-28 | Kla-Tencor Technologies Corporation | Apparatus and method for E-beam dark field imaging |
US7067807B2 (en) | 2004-09-08 | 2006-06-27 | Applied Materials, Israel, Ltd. | Charged particle beam column and method of its operation |
JP5033310B2 (ja) | 2005-02-18 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | 検査装置 |
US7233008B1 (en) | 2005-03-14 | 2007-06-19 | Applied Materials, Israel, Ltd. | Multiple electrode lens arrangement and a method for inspecting an object |
EP1703538B1 (en) | 2005-03-17 | 2008-11-12 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device for high spatial resolution and multiple perspective imaging |
JP5004318B2 (ja) | 2005-06-15 | 2012-08-22 | 株式会社アルバック | イオン注入装置 |
US7348566B2 (en) | 2006-02-28 | 2008-03-25 | International Business Machines Corporation | Aberration-correcting cathode lens microscopy instrument |
JP4790511B2 (ja) | 2006-06-21 | 2011-10-12 | 日本電子株式会社 | 荷電粒子ビーム装置 |
DE102006043895B9 (de) | 2006-09-19 | 2012-02-09 | Carl Zeiss Nts Gmbh | Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen |
US7825386B2 (en) | 2006-10-25 | 2010-11-02 | Hermes-Microvision, Inc. | System and method for a charged particle beam |
JP5054990B2 (ja) | 2007-01-30 | 2012-10-24 | 株式会社日立ハイテクノロジーズ | 走査形電子顕微鏡 |
DE102007010873B4 (de) | 2007-03-06 | 2009-07-30 | Carl Zeiss Nts Gmbh | Objektivlinse |
DE602007007468D1 (de) | 2007-07-27 | 2010-08-12 | Integrated Circuit Testing | Magnetische Linsenanordnung |
JP4586051B2 (ja) | 2007-08-03 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡 |
JP5693241B2 (ja) | 2008-02-28 | 2015-04-01 | カールツァイス エスエムエス ゲーエムベーハーCarl Zeiss SMS GmbH | 微細化構造を有する物体の加工方法 |
CN101388317B (zh) | 2008-03-21 | 2010-08-25 | 汉民微测科技(北京)有限公司 | 扫描电子显微镜 |
US7759653B2 (en) | 2008-05-30 | 2010-07-20 | Hermes Microvision, Inc. | Electron beam apparatus |
US7960697B2 (en) | 2008-10-23 | 2011-06-14 | Hermes-Microvision, Inc. | Electron beam apparatus |
DE102009028013B9 (de) | 2009-07-24 | 2014-04-17 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät mit einer Blendeneinheit und Verfahren zur Einstellung eines Strahlstroms in einem Teilchenstrahlgerät |
JP5439498B2 (ja) | 2009-11-06 | 2014-03-12 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
JP5801891B2 (ja) | 2010-07-30 | 2015-10-28 | パルセータ, エルエルシーPulsetor, Llc | 電子イメージングを用いて試料の画像を作成する荷電粒子線装置及び方法 |
US8319192B2 (en) | 2010-08-24 | 2012-11-27 | Hermes Microvision Inc. | Charged particle apparatus |
EP2518755B1 (en) | 2011-04-26 | 2014-10-15 | FEI Company | In-column detector for particle-optical column |
JP2013033671A (ja) | 2011-08-03 | 2013-02-14 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
CN103890895B (zh) | 2011-09-27 | 2016-05-18 | Snu精度株式会社 | 具备反射电子检测功能的扫描电子显微镜 |
EP2629317B1 (en) | 2012-02-20 | 2015-01-28 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device with dynamic focus and method of operating thereof |
JP6150991B2 (ja) | 2012-07-18 | 2017-06-21 | 株式会社日立ハイテクノロジーズ | 電子ビーム照射装置 |
DE102012215945A1 (de) | 2012-09-07 | 2014-03-13 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zum Betrieb eines Teilchenstrahlgeräts |
EP2706554B1 (en) | 2012-09-10 | 2016-05-25 | Fei Company | Method of using a compound particle-optical lens |
US8907281B2 (en) | 2012-11-19 | 2014-12-09 | Hermes Microvision Inc. | System and method for controlling charge-up in an electron beam apparatus |
EP2735866A1 (en) | 2012-11-27 | 2014-05-28 | Fei Company | Method of sampling a sample and displaying obtained information |
EP2801997B1 (en) | 2013-05-06 | 2016-03-09 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron beam wafer inspection system and method for operation thereof |
KR102234659B1 (ko) | 2013-10-29 | 2021-04-05 | 삼성전자주식회사 | 고에너지 전자 빔을 이용하여 인-셀 오버레이 오프셋을 측정할 수 있는 sem 장치와 그 방법 |
JP6340216B2 (ja) | 2014-03-07 | 2018-06-06 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
US9583306B2 (en) | 2014-12-09 | 2017-02-28 | Hermes Microvision Inc. | Swing objective lens |
US10008360B2 (en) | 2015-01-26 | 2018-06-26 | Hermes Microvision Inc. | Objective lens system for fast scanning large FOV |
US9842724B2 (en) | 2015-02-03 | 2017-12-12 | Kla-Tencor Corporation | Method and system for imaging of a photomask through a pellicle |
CN104897700B (zh) | 2015-06-10 | 2017-09-22 | 北京工业大学 | 在扫描电镜中对纳米液体样品的透射散射成像装置及方法 |
DE102015210893B4 (de) | 2015-06-15 | 2019-05-09 | Carl Zeiss Microscopy Gmbh | Analyseeinrichtung zur Analyse der Energie geladener Teilchen und Teilchenstrahlgerät mit einer Analyseeinrichtung |
DE102015210941B9 (de) | 2015-06-15 | 2019-09-19 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zum Betrieb eines Teilchenstrahlgeräts |
US9601303B2 (en) | 2015-08-12 | 2017-03-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
US9620331B1 (en) | 2015-11-19 | 2017-04-11 | Carl Zeiss Microscopy Ltd. | Method for analyzing an object and charged particle beam device for carrying out the method |
US10515778B2 (en) | 2016-03-16 | 2019-12-24 | Ngr Inc. | Secondary particle detection system of scanning electron microscope |
EP3236486A1 (en) | 2016-04-22 | 2017-10-25 | Carl Zeiss Microscopy GmbH | Method for generating a composite image of an object and particle beam device for carrying out the method |
JP6727024B2 (ja) | 2016-04-28 | 2020-07-22 | 株式会社日立ハイテク | 荷電粒子線装置 |
US10103002B1 (en) | 2016-05-20 | 2018-10-16 | Carl Zeiss Microscopy Gmbh | Method for generating an image of an object and particle beam device for carrying out the method |
DE112017006846T5 (de) | 2017-02-22 | 2019-10-02 | Hitachi High-Technologies Corporation | Ladungspartikelstrahlvorrichtung |
DE102017203553A1 (de) | 2017-03-04 | 2018-09-06 | Carl Zeiss Microscopy Gmbh | Objektpräparationseinrichtung und Teilchenstrahlgerät mit einer Objektpräparationseinrichtung sowie Verfahren zum Betrieb des Teilchenstrahlgeräts |
CN106920723A (zh) | 2017-03-06 | 2017-07-04 | 聚束科技(北京)有限公司 | 一种扫描聚焦系统及电子束控制方法 |
US20180364563A1 (en) | 2017-06-20 | 2018-12-20 | Applied Materials, Inc. | Method and apparatus for inspecting a sample |
WO2019064496A1 (ja) | 2017-09-29 | 2019-04-04 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
CN208256614U (zh) | 2018-02-09 | 2018-12-18 | 聚束科技(北京)有限公司 | 一种扫描电子显微镜物镜系统 |
CN108807118B (zh) | 2018-06-08 | 2024-05-07 | 聚束科技(北京)有限公司 | 一种扫描电子显微镜系统及样品探测方法 |
KR20240018686A (ko) | 2018-08-28 | 2024-02-13 | 에이에스엠엘 네델란즈 비.브이. | 시간 의존적 결함 검사 장치 |
US10658152B1 (en) | 2018-10-04 | 2020-05-19 | Carl Zeiss Microscopy Gmbh | Method for controlling a particle beam device and particle beam device for carrying out the method |
US20200333271A1 (en) | 2019-05-06 | 2020-10-22 | Carl Zeiss Microscopy Gmbh | Method for controlling a unit of a particle beam device and particle beam device for carrying out the method |
CN114256043B (zh) * | 2020-12-02 | 2024-04-05 | 聚束科技(北京)有限公司 | 一种电子束系统 |
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2020
- 2020-12-02 CN CN202011393110.0A patent/CN114220725B/zh active Active
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2021
- 2021-12-03 WO PCT/CN2021/135541 patent/WO2022083789A1/zh active Application Filing
- 2021-12-03 US US17/758,363 patent/US12224153B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103733299A (zh) * | 2011-09-07 | 2014-04-16 | 株式会社日立高新技术 | 扫描电子显微镜 |
CN207425790U (zh) * | 2017-11-21 | 2018-05-29 | 聚束科技(北京)有限公司 | 一种低能扫描电子显微镜系统 |
CN108231511A (zh) * | 2017-11-21 | 2018-06-29 | 聚束科技(北京)有限公司 | 一种扫描电子显微镜物镜系统及样品探测方法 |
CN110376229A (zh) * | 2019-06-12 | 2019-10-25 | 聚束科技(北京)有限公司 | 具备复合式探测系统的扫描电子显微镜和样品探测方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2022083789A1 (zh) | 2022-04-28 |
US12224153B2 (en) | 2025-02-11 |
CN114220725A (zh) | 2022-03-22 |
US20230028903A1 (en) | 2023-01-26 |
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