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CN114203743A - Design method of integrated semiconductor refrigeration heat dissipation packaging structure - Google Patents

Design method of integrated semiconductor refrigeration heat dissipation packaging structure Download PDF

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Publication number
CN114203743A
CN114203743A CN202111510805.7A CN202111510805A CN114203743A CN 114203743 A CN114203743 A CN 114203743A CN 202111510805 A CN202111510805 A CN 202111510805A CN 114203743 A CN114203743 A CN 114203743A
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refrigerator
design
size
temperature
refrigeration
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赵珍阳
张勇
袁俊伟
田中朝
许玉兴
侯维杰
刘刚
于建达
刘杰
宋丽群
付荣
刘德昌
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Shandong Dongyi Photoelectric Instruments Co ltd
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Shandong Dongyi Photoelectric Instruments Co ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38Cooling arrangements using the Peltier effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention provides a design method of an integrated semiconductor refrigeration heat dissipation packaging structure, which belongs to the technical field of semiconductor packaging, and simultaneously considers the mutual influence of a refrigeration device, an image sensor and the packaging structure, and designs the refrigeration device, the image sensor and the packaging structure on the same platform by taking the refrigeration property, the air tightness, the reliability and the heat dissipation as design objectives; the refrigerating device adopts a semiconductor refrigerator, and the type selection of the semiconductor refrigerator is completed by combining the size of a chip and the refrigerating working condition; designing a signal output structure of the image sensor; the design of the integrated shell and the radiator is determined by the size of the semiconductor refrigerator, a signal output structure, the distance between the optical lens and the image sensor, a vacuum interface and the integrated radiator; designing the size and material of the optical window; designing a sealing process; and performing vacuum treatment to form a vacuum packaging structure. The packaging shell and the radiator are integrated through 3D printing, the thermal resistance is minimum, and the radiating effect is optimal.

Description

Design method of integrated semiconductor refrigeration heat dissipation packaging structure
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a design method of an integrated semiconductor refrigeration and heat dissipation packaging structure.
Background
With the continuous improvement of the comprehensive performance requirement of the electron multiplying EMCCD and the miniaturization requirement of the physical size of the appearance in practical application, the existing design method does not consider the long-term reliability work, especially the mutual influence between the coupling with a radiator and the packaging, so the original design method has the defects of low reliability, large volume and the like.
Disclosure of Invention
The technical task of the invention is to solve the defects of the prior art and provide a design method of an integrated semiconductor refrigeration heat dissipation packaging structure.
The technical scheme of the invention is realized in the following way, and the design method of the integrated semiconductor refrigeration heat dissipation packaging structure simultaneously considers the mutual influence of a refrigeration device, an image sensor and the packaging structure, takes refrigeration performance, air tightness, reliability and heat dissipation as design objectives, and designs the refrigeration device, the image sensor and the packaging structure on the same platform;
the refrigeration device adopts a semiconductor refrigerator, the model selection condition of the semiconductor refrigerator takes into account the environmental temperature used by the device, the low temperature to be reached by the cooled object, the temperature difference between the environment temperature and the low temperature, the total amount of the calculated heat load and the cold loss, the number of stages of the refrigerator, the number of the refrigerator electric piles, the heating power consumption of the cooled object, the heat radiation and the cold loss generated by the bonding lead wire are accurately calculated, and the model selection of the semiconductor refrigerator is completed by combining the chip size and the characteristic curve of the refrigeration working condition;
designing a signal output structure of the image sensor; the distance between signal output ends of the image sensor, the distribution and the size of parts;
integrated housing and heat sink design; the size of the integrated shell is determined by the size of the semiconductor refrigerator, the signal output structure, the distance between the optical lens and the image sensor, the vacuum interface and the integrated radiator;
optical window size and material design: the size design of the optical window needs to be matched with the sizes of the image sensor and the refrigeration packaging structure; the material of the optical window needs to meet the requirements of sealing reliability and mechanical strength;
and (3) sealing process design: packaging parts of the whole structure, and selecting a sealing material and a sealing mode;
and (3) vacuum treatment: and after the whole structure is assembled and the image sensor is packaged, performing vacuum exhaust to form a vacuum packaging structure.
The method comprises the following steps:
firstly, accurately calculating according to the heating power consumption and the generated cold loss of the image sensor, and finishing the type selection of the semiconductor refrigerator by combining the chip size and the characteristic curve of the refrigeration working condition;
secondly, according to the physical size of the semiconductor refrigerator, the structure and the physical size design of the cavity are completed by combining the distance between the image sensor and the optical window, and meanwhile, the size design of the integrated radiator is completed by referring to the size of the bottom of the shell;
then, according to the distribution characteristics of the bonding pads of the image sensor chip and the airtight packaging design rule, the overall dimension of the ceramic ring frame and the design of the space between output pins are completed;
and finally, combining the outline dimensions of the ceramic ring frame according to the airtight packaging design rule to complete the dimension design of the optical window.
The image sensor employs an electron multiplying EMCCD.
In the design method:
<1> design of refrigeration packaging structure:
the method adopts AUTOCAD design method, simultaneously considers the mutual influence of a refrigerated semiconductor refrigerator device, an optical device EMCCD of an image sensor and a packaging structure, and designs the refrigerated semiconductor refrigerator device, the optical device EMCCD of the image sensor and the packaging structure on the same platform, thereby achieving the purposes of refrigeration, air tightness, reliability and heat dissipation design;
<2> the model selection principle of the semiconductor refrigerator is as follows:
(1) determining the working state of the refrigerator; the refrigerating, heating and constant temperature performance of the refrigerator is determined according to the direction and the size of the working current;
(2) determining the actual temperature of a hot end during refrigeration; because the refrigerator is a temperature difference device, the refrigerator must be arranged on the radiator to achieve the optimal refrigeration effect, and the actual temperature of the hot end of the refrigerator is determined according to the heat dissipation condition; the actual temperature of the hot end of the refrigerator is higher than the surface temperature of the radiator due to the influence of the temperature gradient; similarly, besides the heat dissipation gradient at the hot end, a temperature gradient also exists between the cooled space and the cold end of the refrigerator;
(3) determining the working environment and atmosphere of the refrigerator; determining whether the working environment is in a vacuum condition or in a normal-temperature normal-pressure atmospheric environment; determining the atmosphere environment as dry nitrogen or other protective gas, static or flowing air and ambient temperature, thereby taking heat preservation or insulation measures into consideration and determining the influence of heat leakage;
(4) determining the sizes of a refrigerator working object, a heat load and cold loss; in addition to the influence of the temperature at the heating end, the lowest temperature or the maximum temperature difference which can be reached by the refrigerator is determined under the conditions of no load and heat insulation, and actually, the refrigerator cannot achieve the real heat insulation and has heat load;
(5) determining the number of stages of the refrigerator; the selection of the refrigerator stage number must meet the requirement of the actual temperature difference, and the nominal temperature difference of the refrigerator must be higher than the temperature difference required actually to meet the design requirement; selecting the number of stages and considering the cost;
(6) specification of the refrigerator; after the stage number of the refrigerator is selected, the specification of the refrigerator, particularly the working current of the refrigerator, can be selected; because the type and the working condition of the image sensor are determined, a refrigerator with the minimum working current is usually selected;
(7) determining the number of the electric piles; the total refrigerating power of the refrigerator which can meet the requirement of temperature difference is determined, and the total refrigerating capacity of the refrigerator is ensured to be larger than the total power of the heat load of a working object at the working temperature.
Selecting a semiconductor refrigerator:
(1) the used environment temperature Th;
(2) calculating the temperature difference delta T of the cooled object at the low temperature Tc DEG C;
(3) calculating the total amount of heat load Q and cold loss;
(4) determining the number of refrigerator stages;
(5) after the model is determined, looking up the thermoelectric refrigeration characteristic curve of the model, determining the hot end temperature of the refrigerator by using environment and a heat dissipation mode to obtain similar low-temperature, looking up the refrigerating capacity of a cold end Qc in a corresponding characteristic curve graph, and finally dividing the required refrigerating capacity by the refrigerating capacity Qc generated by each galvanic pile to obtain the required number of the galvanic piles, wherein N is Q/Qc, and the parameter determines the overall performance of the refrigerator;
(6) accurately calculating the heating power consumption, the heat radiation and the cold loss generated by a bonding lead of the EMCCD, and finishing the type selection of the semiconductor refrigerator by combining the chip size and the characteristic curve of the refrigeration working condition;
<3> design of integrated refrigeration and heat dissipation packaging structure:
the packaging structures are respectively an optical window, a signal output structure, a semiconductor refrigerator, an integrated shell and a radiator from top to bottom;
firstly, accurately calculating according to the heating power consumption and the generated cold loss of the EMCCD, and finishing the type selection of the semiconductor refrigerator by combining the chip size and the characteristic curve of the refrigeration working condition;
secondly, according to the physical size of the semiconductor refrigerator, the structure and the physical size design of the cavity are completed by combining the distance between the EMCCD and the optical window, and meanwhile, the size design of the integrated radiator is completed by referring to the size of the bottom of the shell;
then, according to the distribution characteristics of pads of the EMCCD chip and the airtight packaging design rule, the overall dimension of the ceramic ring frame and the design of the space between output pins are completed;
finally, according to the airtight packaging design rule, combining the overall dimension of the ceramic ring frame to complete the dimension design of the optical window;
wherein:
(1) integrated shell and radiator
The size of the shell is determined by the size of the semiconductor refrigerator, the signal output structure, the distance between the optical lens and the EMCCD, the vacuum interface and the integrated radiator,
a. from the installation point of view:
the length and width of the inner cavity of the shell are larger than those of the semiconductor refrigerator; the two are matched;
the height of the shell is higher than that of the TCE so as to avoid the contact of the EMCCD with the optical window and the lead after packaging;
b. starting from comprehensive heat dissipation and rigidity performances:
designing and determining the thickness of a bottom plate of the shell; the shell is provided with a glass insulator and a fusion-sealed lead wire, so that the electrode of the semiconductor refrigerator is electrified;
the oxygen-free copper is designed and used as a vacuum pipeline and matched with a vacuum treatment system, the direct outer diameter of the vacuum pipeline is designed and determined, and the oxygen-free copper material has high ductility, is easy to cold cut and is convenient to realize vacuum sealing;
c. mounting holes are designed for the lens support combination in a matching way for matching connection;
in order to reduce the thermal resistance to the maximum extent and improve the heat dissipation effect, the radiator and the shell are designed into a whole;
d. from the point of view of thermal conductivity, rigidity and workability:
the shell is made of metal aluminum, the shell and the radiator are manufactured in a 3D printing mode, and a lead and a vacuum pipeline are assembled at the later stage;
(2) optical window size and material
From the perspective of matching with the refrigeration packaging structure:
the size of the optical window is integrally larger than that of the sealed inner cavity of the ceramic ring, and the width of a single-side sealed area is determined;
from the viewpoint of sealing reliability:
the optical window material is sapphire, so that the mechanical strength is improved;
(3) sealing process
Because the ceramic ring and the optical window sealing area are not designed with metallization, the sealing process is finished in a glue sealing mode;
the shell, the ceramic ring and the optical window are sealed by using double-component epoxy resin as a sealant, and after room temperature curing and temperature resistance of-60 ℃ to +100 ℃, the sealant is cured, the adhesive force with a bonded article is high, and the leakage rate index of air tightness detection can meet the project assessment requirement;
(4) vacuum treatment
After the shell is assembled, performing vacuum exhaust operation after EMCCD packaging and photoelectric parameter screening; and when the vacuum degree meets the requirement of the expected vacuum degree, shearing the vacuum pipeline by using a pipe wrench, and forming vacuum inside the shell.
Compared with the prior art, the invention has the following beneficial effects:
the design content of the existing image sensor refrigeration packaging structure comprises the following contents:
(1) and (3) packaging structure: and designing a refrigeration packaging structure by combining packaging bonding, surface mounting, sealing and vacuum treatment processes according to the requirements of electrical output and an optical lens.
(2) The heat dissipation structure comprises: the fins are matched according to the size of the bottom of the packaging shell, the heat dissipation area is enlarged to improve the heat dissipation effect, and the condition of large heat dissipation size or insufficient heat dissipation capacity exists.
(3) Selecting a semiconductor refrigerator: according to the application requirement, respective parameters of an energy conservation formula are substituted into the formula:
Figure BDA0003405271710000051
and matching, wherein Q is the power consumption or the heating value of the chip, Delta T is the refrigeration temperature difference, Qmax is the maximum refrigeration power consumption of the semiconductor refrigerator, and Delta Tmax is the maximum refrigeration temperature difference of the semiconductor refrigerator. Q and delta T are known parameters, delta Tmax is subjected to extreme value substitution according to the environmental requirements, Qmax is calculated, and then screening and model selection are carried out in a semiconductor refrigerator product library.
The semiconductor refrigerator model selection method has the defect of large deviation, and the maximum refrigeration power consumption of the semiconductor refrigerator is easily caused to exceed the practical application, so that the semiconductor refrigerator is unnecessarily overloaded to work.
According to the design method of the integrated semiconductor refrigeration heat dissipation packaging structure, the sealed shell integrating refrigeration and heat dissipation is adopted relative to the independent structures of the refrigeration sealed shell and the radiator, and the packaging structure with certain reliability and use value is provided.
Through EMCCD's the consumption of generating heat, heat radiation, the cold loss that bonding lead produced calculates and AUTOCAD design, synthesized semiconductor cooler performance, image sensor and encapsulation shell structure's interact, improved design accuracy and practicality.
Compared with the full-metallization vacuum packaging form, the refrigeration packaging structure has the advantages of low cost, high cost performance and certain reliability.
On the whole, this design compact structure, encapsulation duty cycle are big, sealed effectual, and encapsulation casing and radiator pass through 3D and print and form an organic whole, and the thermal resistance is minimum, and the radiating effect is best.
From the application point of view, the invention belongs to fixed vacuum, can not be disassembled after packaging, and needs to package the EMCCD chip with qualified photoelectric performance of primary screening into the interior.
The design method of the integrated semiconductor refrigeration heat dissipation packaging structure is reasonable in design, simple in structure, safe, reliable, convenient to use, easy to maintain and good in popularization and use value.
Drawings
FIG. 1 is a diagram of an integrated refrigeration heat dissipation package of the present invention;
FIG. 2 is a signal output architecture of the present invention;
FIG. 3 is a schematic structural diagram of an integrated housing and heat sink according to the present invention;
FIG. 4 is a schematic structural diagram of an integrated housing and heat sink according to the present invention;
FIG. 5 is a schematic structural view of a ceramic ring frame of the present invention;
FIG. 6 is a schematic structural view of a ceramic ring frame of the present invention;
FIG. 7 is a schematic structural view of a ceramic ring frame of the present invention;
fig. 8 is a schematic structural view of a ceramic ring frame of the present invention.
The reference numerals in the drawings denote:
1. an optical window 2, a signal output structure 3, a semiconductor refrigerator 4, an integrated shell 5, a radiator,
6. short circuit ring, 7, bonding pad, 8, pin, 9 and alumina ceramic.
Detailed Description
The following describes a design method of an integrated semiconductor cooling and heat dissipating package structure according to the present invention in detail with reference to the accompanying drawings.
As shown in the attached drawings, the design method of the integrated semiconductor refrigeration and heat dissipation packaging structure of the invention comprises the following steps:
1. the refrigeration packaging structure is designed as follows:
the AUTOCAD design method is adopted, the mutual influence of the refrigeration (semiconductor refrigerator device), the image sensor (optical device) and the packaging (structure) is considered at the same time, and the three are designed on the same platform, so that the purposes of refrigeration, air tightness, reliability and heat dissipation design are achieved.
2. Selecting a semiconductor refrigerator:
1) the ambient temperature Th used.
2) The temperature difference delta T is calculated according to the low temperature Tc ℃ which is to be reached by the cooled object.
3) The total amount of heat load Q and cold loss was calculated.
4) A chiller stage number is determined.
5) After the model is determined, the thermoelectric refrigeration characteristic curve of the model is consulted, the hot end temperature of the refrigerator is determined according to the use environment and the heat dissipation mode to obtain the similar low-temperature, the refrigerating capacity of the cold end Qc is consulted in the corresponding characteristic curve graph, finally the required refrigerating capacity is divided by the refrigerating capacity Qc generated by each electric pile to obtain the required electric pile number, N is Q/Qc, and the parameter determines the overall performance of the refrigerator.
6) And accurately calculating the heating power consumption, the heat radiation and the cold loss generated by the bonding lead of the EMCCD, and finishing the type selection of the semiconductor refrigerator by combining the chip size and the characteristic curve of the refrigeration working condition.
Compared with the independent structure of the refrigeration sealed shell and the radiator, the invention adopts the sealed shell integrating refrigeration and heat dissipation, and has a packaging structure with certain reliability and use value.
The materials of the packaging structure from top to bottom are respectively an optical window, a signal output structure, a semiconductor refrigerator, an integrated shell and a radiator.
Firstly, accurately calculating according to the heating power consumption and the generated cold loss of the EMCCD, and finishing the type selection of the semiconductor refrigerator by combining the chip size and the characteristic curve of the refrigeration working condition;
secondly, according to the physical size of the semiconductor refrigerator, the structure and the physical size design of the cavity are completed by combining the distance between the EMCCD and the optical window, and meanwhile, the size design of the integrated radiator is completed by referring to the size of the bottom of the shell;
then, according to the distribution characteristics of pads of the EMCCD chip and the airtight packaging design rule, the overall dimension of the ceramic ring frame and the design of the space between output pins are completed;
and finally, combining the outline dimensions of the ceramic ring frame according to the airtight packaging design rule to complete the dimension design of the optical window.
At present, the semiconductor chip is cooled passively by three methods, such as stirling cooler, joule-thomson cooler and semiconductor cooler (hereinafter referred to as semiconductor cooler). The former two are generally applied to the technical field of deep refrigeration, the refrigeration temperature can reach-196 ℃, and the former two are generally applied to the field of infrared imaging devices, such as indium antimonide materials and mercury cadmium telluride material image sensors. The semiconductor refrigerator is applied to the technical field of shallow refrigeration, and is suitable for the requirements of more than 80 ℃ below zero, such as silicon-based CCD and CMOS image sensors.
For EMCCD (electron multiplying CCD), it is necessary to work in a low temperature environment, such as-40 ℃ under vacuum. Therefore, in order to ensure the normal imaging or detection of the EMCCD, a closed structure needs to be designed and manufactured for the image sensor to work in a low-temperature environment. The refrigeration packaging structure comprises a cover plate, a conductor refrigerator, a signal output structure, an integrated shell and a radiator, an optical window size, the integrated shell and the radiator, a sealing process and vacuum treatment which are respectively explained below.
1. A semiconductor refrigerator:
(1) the operating state of the refrigerator is determined. The refrigerating, heating and constant temperature performance of the refrigerator can be determined according to the direction and the size of the working current.
(2) And determining the actual temperature of the hot end during cooling. Because the refrigerator is a temperature difference device, the refrigerator must be installed on a good radiator to achieve the best refrigerating effect, and the actual temperature of the hot end of the refrigerator during refrigeration is determined according to the heat dissipation condition. Due to the influence of the temperature gradient, the actual temperature of the hot end of the refrigerator is higher than the surface temperature of the radiator, usually, the temperature is a few tenths of degrees less, and the temperature is a few tenths of degrees more. Similarly, in addition to the thermal dissipation gradient at the hot end, a temperature gradient also exists between the cooled space and the cold end of the refrigerator.
(3) The refrigerator working environment and atmosphere are determined. This includes whether operating in a vacuum condition or in the normal atmosphere, dry nitrogen or other protective gases, static or flowing air and ambient temperature, thereby taking into account insulation measures and determining the effect of heat leakage.
(4) And determining the working objects of the refrigerators, the heat load and the cold loss. In addition to the effect of the hot end temperature, the minimum temperature or maximum temperature difference that can be reached by the refrigerator is determined under both no-load and adiabatic conditions, and in practice, the refrigerator cannot be truly adiabatic, as well as thermally loaded.
(5) The number of refrigerator stages is determined. The number of refrigerator stages must be selected to meet the actual temperature differential, and the nominal temperature differential of the refrigerator must be higher than the actual temperature differential, otherwise the requirement is not met. But not too many stages because the price of the refrigerator increases greatly as the number of stages increases.
(6) Specification of the refrigerator. The specification of the refrigerator, in particular the operating current of the refrigerator, can be selected by selecting the number of stages of the refrigerator. There are several refrigerators capable of meeting the requirement of temperature difference and refrigeration, but the refrigerator with the smallest working current is usually selected because of different working conditions.
(7) The number of the electric stacks is determined. This is determined by the total refrigeration power of the refrigerators that can meet the temperature difference requirement, which must ensure that the total refrigeration capacity of the refrigerators at the operating temperature is greater than the total power of the thermal load of the work object.
Firstly, the heat required to be taken away by refrigeration includes the self-heating power consumption of the EMCCD, heat radiation and cold loss generated by a bonding wire. In the invention patent, because the vacuum packaging is adopted, the cold loss caused by convection is not considered.
The thermal radiation generated by the EMCCD chip in a vacuum environment is in accordance with formula 1.
Figure BDA0003405271710000081
QRIs the heat loss from the radiation in w;
s represents the Stefan-Boltzmann constant, 5.67X 10-8W/m2K4
A is the exposed surface area in m2
εxtIs the emissivity of the exposed surface, see equation 2;
Figure BDA0003405271710000082
ε1,ε2emissivity of a high temperature, low temperature surface;
F12is the angular coefficient from surface 1 to surface 2;
This the absolute temperature of the hot end surface in K;
Tcis the absolute temperature of the cold end surface in K.
The invention relates to an EMCCD surface size of 34mm multiplied by 22 mm; the chip and the optical window are parallel, then F12The angular coefficient is 1; t ishThe absolute temperature of the hot end surface is usually 313K (40 ℃ C.), TcThe absolute temperature of the cold end surface is 233K (-40 ℃); epsilon1The window emissivity is 0.94, epsilon2If the radiation coefficient of the chip is 0.94, the radiation coefficient is substituted into epsilon in formula 2xtThe emissivity of the exposed surface is 0.633, and the heat radiation Q is substituted into formula 1RThe value was 0.18W.
The cold loss from the bonding wire is due to thermal conduction and should be in accordance with equation 3.
Figure BDA0003405271710000083
Wherein Q represents the heat of conduction across the material in w;
k represents the thermal conductivity of the material and has the unit of W/m ℃;
a represents the cross-sectional area of the material in m2
x represents the thickness or length of the material in m;
Δ T represents the temperature difference between the cold and hot end faces of the material, in degrees Celsius.
The invention relates to a method for preparing a bonding wire, which is characterized in that a bonding wire material is an aluminum wire, and the heat conductivity of K is 240W/m ℃; diameter of 25 μm and area A of 1.13X10-9m2(ii) a The length of the lead is 0.002mm, and the number of the leads is 24; the temperature difference is 80 ℃, and the cold loss Q generated by the bonding wire is 0.26W.
The invention relates to a design value of the self heating power consumption of an EMCCD (electron-multiplying charge coupled device), and the total heat quantity which needs to be taken away by a semiconductor refrigerator is 0.94W.
Secondly, the number of the refrigerating devices is determined according to the refrigerating temperature or the refrigerating temperature difference,
the steps for selecting a refrigerator according to the above principles are as follows:
1) the ambient temperature used, Th c, was determined.
2) The temperature difference delta T is calculated according to the low temperature Tc ℃ which is to be reached by the cooled object.
3) The total amount of heat load Q and cold loss was calculated.
4) The number of chiller stages is determined and the maximum refrigeration temperature differential provided with reference to table 1 corresponds to the number of chiller stages.
TABLE 1 maximum refrigeration temperature difference corresponds to refrigerator stage number
Number of stages Maximum refrigeration temperature difference (DEG C)/nitrogen @1atm Maximum refrigeration temperature difference (DEG C)/vacuum
1 64 67
2 84 91
3 95 109
4 101 115
5 —— 121
6 —— 127
(5) After the model is determined, the thermoelectric refrigeration characteristic curve of the model is consulted, the hot end temperature of the refrigerator is determined according to the use environment and the heat dissipation mode to obtain the similar low-temperature, the refrigerating capacity of the cold end Qc is consulted in the corresponding characteristic curve graph, and finally the required number of the galvanic piles can be obtained by dividing the required refrigerating capacity by the refrigerating capacity Qc generated by each galvanic pile, wherein N is Q/Qc.
(6) And the formula (4) can be used for preliminarily judging whether the selected refrigerator meets the application requirement.
Figure BDA0003405271710000091
2. Signal output structure
The signal output structure is shown in fig. 2.
Fig. 2 is a schematic diagram of an output structure, wherein the spacing, distribution and size of the output ends are recorded, and the structural reasonableness is shown.
The technical requirements of the signal output structure are as follows:
1. the one-way cross-hatched area represents the metallized area, and the metal part and the exposed metallized area are plated with nickel firstly and then plated with gold.
The cross section line area of the cross section of the porcelain piece is shown.
2. Electrical connection: bonding fingers PAD 1-PAD 52 are correspondingly connected with PINs PIN 1-PIN 52.
3. The thickness of the plating layer is 1.3-8.9 μm; the thickness of the gold layer is 1.3-5.7 μm.
4. The lead resistance is less than or equal to 1.5 omega; insulation resistance of not less than 1 × 109/Ω(100V DC)。
5. Sealing property: r1 is less than or equal to 1 x10-3/Pa·cm3/s(He)。
6. The ceramic dimensional tolerance is according to grade 6 of SJ/T10742-1996; the tolerance of the metal piece is in the f level of GB/T1804-2000, and the fillet and the metallization size are not used as the finished product inspection size.
3. Integrated shell and radiator
The size of the shell is determined by the size of the semiconductor refrigerator, the signal output structure, the distance between the optical lens and the EMCCD, the vacuum interface and the integrated radiator, for example, as follows:
from the installation angle, the length and width of the inner cavity of the shell are 2-6 mm larger than the size of the semiconductor refrigerator; the height of the shell is 2 mm-5 mm higher than that of the TCE, so that the EMCCD is prevented from being in contact with the optical window and the lead after packaging; the heat dissipation and rigidity performance are integrated, and the thickness of a bottom plate of the shell is 2 mm; the shell is provided with a glass insulator/a fusion sealing lead wire to realize the electrification of the electrode of the semiconductor refrigerator; the oxygen-free copper is used as a vacuum pipeline, is matched with the existing vacuum processing system, has a direct outer diameter of 4mm, and more importantly, has high ductility, is easy to cold cut and is convenient to realize vacuum sealing; 4 mounting holes are designed for combining the lens bracket; in order to reduce the thermal resistance to the maximum extent and improve the heat dissipation effect, the radiator and the shell are integrated. The integrated housing and heat sink are schematically shown in fig. 3 and 4.
The technical requirements are as follows:
1 air leakage rate less than or equal to 1 x10-3/Pa·cm3/s;
2 the insulation resistance between leads is more than or equal to 1 multiplied by 109/Ω;
3, surface coating: ni: 3.00-8.90 μm;
Figure BDA0003405271710000101
ni is not plated in the copper pipe;
4 tolerance according to GB/T1804-m.
From heat conduction, rigidity and workable angle, metal aluminium is chooseed for use to the casing material, and the casing passes through 3D printing mode with the radiator and realizes the preparation, later stage assembly lead wire and vacuum pipe.
4. Optical window size and material
From the angle of matching with the refrigeration packaging structure, the size of the light window is integrally larger than that of the sealing inner cavity of the ceramic ring by 5-8 mm, and the width of the single-side sealing area is 2-4 mm, for example as follows:
the size of the sealed inner cavity of the ceramic ring is 40mm multiplied by 28mm, the external dimension is 50mm multiplied by 39mm, and the size of the optical window is designed to be 47mm multiplied by 35mm multiplied by 1mm (length) multiplied by 35mm (width).
From the perspective of sealing reliability, the light window material is made of sapphire, and the mechanical strength of the light window material is higher than that of a quartz material.
5. Sealing process
Because the ceramic ring and the light window sealing area are not designed with metallization, the structure adopts a glue sealing mode to complete the sealing process.
The shell, the ceramic ring and the optical window are sealed by using two-component epoxy resin as sealant, and the two-component epoxy resin is cured at room temperature and resists the temperature of minus 60 ℃ to plus 100 ℃. After curing, the adhesive force with the bonding article is high, and the leakage rate index of air tightness detection can meet the project assessment requirements, and a successful example has been provided in the sealing of photoelectric imaging devices.
6. Vacuum treatment
After the shell is assembled, the vacuum exhaust operation can be carried out through the photoelectric parameter screening after the EMCCD is packaged. And when the vacuum degree meets the expected requirement, shearing the vacuum pipeline by using a pipe clamp, and forming vacuum inside the shell.
The vacuum pipeline is made of oxygen-free copper, and has excellent mechanical property, extensibility and sealing property. After the pipe tongs are used for shearing, the oxygen-free copper pipeline is folded to achieve the effect of interatomic bonding and form a closed state.
On the whole, this design compact structure, encapsulation duty cycle are big, sealed effectual, and encapsulation casing and radiator pass through 3D and print and form an organic whole, and the thermal resistance is minimum, and the radiating effect is best. From the perspective of application, this belongs to fixed vacuum, and the encapsulation back is undetachable, needs to screen the qualified EMCCD chip of photoelectric properties preliminary to inside.
The physical object designed and manufactured according to the refrigeration packaging structure is subjected to packaging operation, and is subjected to thermal, mechanical and 1000-hour gain aging test verification according to component level examination standards, so that the EMCCD and the refrigeration component can normally work, the internal vacuum is kept, and certain use and practical values are achieved.
In contrast, the cost of the structure only accounts for one tenth of the cost of the full-metallization vacuum package, and the structure has obvious price advantage and market competitiveness.
The volume of the structure is one tenth smaller than that of a Dewar in a live vacuum form (a shell with a vacuum inside), and the structure is suitable for more scenes.

Claims (5)

1.一种集成式半导体制冷散热封装结构的设计方法,其特征在于1. a design method of an integrated semiconductor refrigeration heat dissipation package structure, characterized in that 该设计方法同时考虑到制冷器件、图像传感器和封装结构三者的相互影响,以制冷性、气密性、可靠性、散热性为设计宗旨,将三者在同一平台上进行设计;The design method also takes into account the mutual influence of the refrigeration device, the image sensor and the packaging structure, and takes refrigeration, air tightness, reliability and heat dissipation as the design principles, and designs the three on the same platform; 制冷器件采用半导体制冷器,半导体制冷器的选型条件兼顾该器件所使用的环境温度、被冷却物体应达到的低温温度、以及二者之间的温差、所计算热负载和冷损的总量、确定制冷器级数、制冷器电堆数量确定、被冷却物体的发热功耗,热辐射,键合引线产生的冷损进行精确计算,结合芯片尺寸和制冷工况的特性曲线完成半导体制冷器的选型;The refrigeration device adopts a semiconductor cooler. The selection conditions of the semiconductor cooler take into account the ambient temperature used by the device, the low temperature temperature that the object to be cooled should reach, the temperature difference between the two, and the total calculated heat load and cooling loss. 、Accurately calculate the number of refrigerator stages, the number of refrigerator stacks, the heating power consumption of the object to be cooled, the heat radiation, and the cooling loss generated by the bonding wire, and combine the chip size and the characteristic curve of the cooling condition to complete the semiconductor refrigerator. selection; 图像传感器的信号输出结构设计;图像传感器信号输出端的间距、零部件分布,尺寸;The signal output structure design of the image sensor; the spacing, component distribution and size of the image sensor signal output end; 集成式壳体及散热器设计;集成式壳体尺寸由半导体制冷器尺寸、信号输出结构、光学镜头与图像传感器距离、真空接口、集成式散热器决定;Integrated housing and radiator design; the size of the integrated housing is determined by the size of the semiconductor cooler, the signal output structure, the distance between the optical lens and the image sensor, the vacuum interface, and the integrated radiator; 光窗尺寸及材料设计:光窗的尺寸设计需要与图像传感器以及制冷封装结构尺寸相匹配;光窗的材料需要满足密封可靠性、机械强度;Light window size and material design: The size design of the light window needs to match the size of the image sensor and the cooling package structure; the material of the light window needs to meet the sealing reliability and mechanical strength; 密封工艺设计:整体结构各零部件之间封装以及密封材料和密封方式的选用;Sealing process design: encapsulation between components of the overall structure and selection of sealing materials and sealing methods; 真空处理:整体结构装配完毕,图像传感器封装后,进行真空排气,形成真空封装结构。Vacuum treatment: After the overall structure is assembled, after the image sensor is packaged, vacuum exhaust is performed to form a vacuum package structure. 2.根据权利要求1所述的一种集成式半导体制冷散热封装结构的设计方法,其特征在于:2. The design method of an integrated semiconductor refrigeration heat dissipation package structure according to claim 1, wherein: 该方法的步骤包括:The steps of the method include: 首先,根据图像传感器的发热功耗和产生的冷损进行精确计算,结合芯片尺寸和制冷工况的特性曲线完成半导体制冷器选型;First of all, according to the heating power consumption of the image sensor and the generated cooling loss, the precise calculation is carried out, and the selection of the semiconductor cooler is completed by combining the chip size and the characteristic curve of the cooling condition; 其次,根据半导体制冷器物理尺寸,结合图像传感器距光学窗口的距离完成腔体的结构和物理尺寸设计,同时,参照壳体底部尺寸,完成集成散热器尺寸设计;Secondly, according to the physical size of the semiconductor refrigerator, combined with the distance between the image sensor and the optical window, the structure and physical size design of the cavity is completed, and at the same time, the size design of the integrated radiator is completed with reference to the size of the bottom of the shell; 然后,按照图像传感器芯片焊盘分布特征,并依据气密性封装设计规则,完成陶瓷环框架外形尺寸,输出管脚间距设计;Then, according to the distribution characteristics of the image sensor chip pads, and according to the design rules of airtight packaging, the overall dimensions of the ceramic ring frame and the spacing of the output pins are designed; 最后,依据气密性封装设计规则结合陶瓷环框架外形尺寸,完成光学窗口尺寸设计。Finally, the size design of the optical window is completed according to the design rules of the hermetic package and the outer dimensions of the ceramic ring frame. 3.根据权利要求1所述的一种集成式半导体制冷散热封装结构的设计方法,其特征在于:图像传感器采用电子倍增EMCCD。3 . The method for designing an integrated semiconductor refrigeration and heat dissipation package structure according to claim 1 , wherein the image sensor adopts an electron multiplying EMCCD. 4 . 4.一种集成式半导体制冷散热封装结构的设计方法,其特征在于:该设计方法包括:4. A design method for an integrated semiconductor refrigeration and heat dissipation package structure, characterized in that: the design method comprises: <1>制冷封装结构设计:<1> Refrigeration package structure design: 采用AUTOCAD设计方法,同时考虑制冷的半导体制冷器器件、图像传感器的光学器件EMCCD和封装结构三者的相互影响,将三者在同一平台上进行设计,达到制冷、气密性、可靠性、散热设计的目的;Using the AUTOCAD design method, considering the mutual influence of the refrigeration semiconductor refrigerator device, the optical device EMCCD of the image sensor and the packaging structure, the three are designed on the same platform to achieve refrigeration, air tightness, reliability, and heat dissipation. the purpose of the design; <2>半导体制冷器选型:<2>Selection of semiconductor cooler: (1)使用的环境温度Th℃;(1) The ambient temperature Th°C used; (2)被冷却物体应达到的低温温度Tc℃,计算出温差ΔT;(2) The low temperature Tc°C that the object to be cooled should reach, and the temperature difference ΔT is calculated; (3)计算热负载Q和冷损的总量;(3) Calculate the total amount of heat load Q and cooling loss; (4)确定制冷器级数;(4) Determine the number of refrigerator stages; (5)确定型号后,查阅该型号的温差电制冷特性曲线,由使用环境和散热方式确定制冷器的热端温度得出相近的低温温度,在相应的特性曲线图中查处冷端Qc的制冷量,最后由所需要的制冷量除以每个电堆产生的制冷量Qc就可以得到所需要的电堆数量,N=Q/Qc,这个参数决定制冷器整体性能;(5) After confirming the model, check the thermoelectric refrigeration characteristic curve of the model, determine the temperature of the hot end of the refrigerator according to the use environment and heat dissipation method to obtain a similar low temperature temperature, and check the refrigeration of the cold end Qc in the corresponding characteristic curve. Finally, the required number of stacks can be obtained by dividing the required cooling capacity by the cooling capacity Qc generated by each stack, N=Q/Qc, this parameter determines the overall performance of the refrigerator; (6)根据EMCCD的发热功耗,热辐射,键合引线产生的冷损进行精确计算,结合芯片尺寸和制冷工况的特性曲线完成半导体制冷器选型;(6) Accurately calculate according to EMCCD’s heating power consumption, thermal radiation, and cold loss generated by bonding wires, and complete the selection of semiconductor refrigerators based on the chip size and the characteristic curve of cooling conditions; <3>集成式制冷散热封装结构设计:<3> Integrated cooling and heat dissipation package structure design: 封装结构由上至下分别为光窗、信号输出结构、半导体制冷器、集成式壳体及散热器;The package structure from top to bottom is a light window, a signal output structure, a semiconductor refrigerator, an integrated housing and a radiator; 首先,根据EMCCD的发热功耗和产生的冷损进行精确计算,结合芯片尺寸和制冷工况的特性曲线完成半导体制冷器选型;First of all, according to the heating power consumption of EMCCD and the generated cooling loss, the precise calculation is carried out, and the selection of semiconductor cooler is completed according to the chip size and the characteristic curve of cooling conditions; 其次,根据半导体制冷器物理尺寸,结合EMCCD距光学窗口的距离完成腔体的结构和物理尺寸设计,同时,参照壳体底部尺寸,完成集成散热器尺寸设计;Secondly, according to the physical size of the semiconductor refrigerator, combined with the distance between the EMCCD and the optical window, the structure and physical size of the cavity are designed, and at the same time, the size of the integrated heat sink is designed with reference to the bottom size of the shell; 然后,按照EMCCD芯片焊盘分布特征,并依据气密性封装设计规则,完成陶瓷环框架外形尺寸,输出管脚间距设计;Then, according to the distribution characteristics of EMCCD chip pads, and according to the design rules of air-tight packaging, the overall dimensions of the ceramic ring frame and the spacing of the output pins are designed; 最后,依据气密性封装设计规则结合陶瓷环框架外形尺寸,完成光学窗口尺寸设计;Finally, according to the design rules of hermetic packaging and the outer dimensions of the ceramic ring frame, the size of the optical window is designed; 其中:in: (1)集成式壳体及散热器(1) Integrated housing and radiator 壳体尺寸由半导体制冷器尺寸,信号输出结构,光学镜头与EMCCD距离,真空接口,集成式散热器决定,The size of the shell is determined by the size of the semiconductor cooler, the signal output structure, the distance between the optical lens and the EMCCD, the vacuum interface, and the integrated heat sink. a.从安装的角度出发:a. From the installation point of view: 壳体内腔长宽尺寸大于半导体制冷器尺寸;二者相配合;The length and width of the inner cavity of the shell are larger than the size of the semiconductor refrigerator; the two are matched; 壳体高度高于TCE高度,以避免封装后EMCCD与光窗、引线接触;The height of the shell is higher than the height of the TCE to avoid the EMCCD contacting with the light window and leads after packaging; b.从综合散热和刚性性能出发:b. Starting from the comprehensive heat dissipation and rigidity performance: 设计并确定壳体底板厚度;壳体设计玻璃绝缘子、熔封引线,实现半导体制冷器电极通电;Design and determine the thickness of the bottom plate of the shell; design glass insulators and sealing leads for the shell to realize the electrification of the electrodes of the semiconductor refrigerator; 设计使用无氧铜作为真空管道,与真空处理系统相匹配,设计确定真空管道的直接外径,由于无氧铜材料延展性高,易于冷切,便于实现真空封接;The design uses oxygen-free copper as the vacuum pipe, which is matched with the vacuum processing system, and the direct outer diameter of the vacuum pipe is determined by the design. Due to the high ductility of the oxygen-free copper material, it is easy to be cold-cut and easy to achieve vacuum sealing; c.为镜头支架结合,配合设计安装孔配合连接;c. For the combination of the lens bracket, the design of the mounting hole is matched with the connection; 为最大限度降低热阻,提高散热效果,散热器与壳体设计构成一体;In order to minimize the thermal resistance and improve the heat dissipation effect, the design of the radiator and the shell is integrated; d.从导热、刚性和可加工的角度出发:d. From the point of view of thermal conductivity, rigidity and machinability: 壳体材料设计选用金属铝,壳体与散热器通过3D打印方式制作,后期装配引线和真空管道;The shell material design is made of metal aluminum, the shell and the radiator are made by 3D printing, and the lead wires and vacuum pipes are assembled later; (2)光窗尺寸及材料(2) Window size and material 从与制冷封装结构匹配的角度出发:From the perspective of matching with the refrigeration package structure: 光窗尺寸整体大于陶瓷环密封内腔,确定单边密封区域宽度;The overall size of the light window is larger than the inner cavity of the ceramic ring seal, and the width of the unilateral sealing area is determined; 从密封可靠性的角度出发:From the point of view of sealing reliability: 光窗材料选用蓝宝石,提高机械强度;The light window material is sapphire to improve the mechanical strength; (3)密封工艺(3) Sealing process 由于陶瓷环与光窗密封区域均未设计金属化,故采用胶封形式完成密封工艺;Since the sealing area of the ceramic ring and the light window is not designed to be metallized, the sealing process is completed in the form of glue sealing; 壳体,陶瓷环与光窗三者之间的密封使用双组份环氧树脂为密封胶,经室温固化,耐温-60℃~+100℃.固化后,与粘接物品附着力高,气密性检测的泄漏率指标能满足项目考核要求;The sealing between the shell, the ceramic ring and the light window uses two-component epoxy resin as the sealant, which is cured at room temperature and has a temperature resistance of -60°C to +100°C. The leak rate index of air tightness detection can meet the project assessment requirements; (4)真空处理(4) Vacuum treatment 壳体装配完毕,EMCCD封装后经光电参数筛选后进行真空排气操作;当真空度达到预期真空度要求后,使用管钳将真空管道进行剪切,壳体内部形成真空。After the shell is assembled, the EMCCD is packaged and screened by optoelectronic parameters, and then the vacuum exhaust operation is carried out; when the vacuum degree reaches the expected vacuum degree, the vacuum pipe is cut with a pipe wrench, and a vacuum is formed inside the shell. 5.根据权利要求4所述的一种集成式半导体制冷散热封装结构的设计方法,其特征在于:半导体制冷器的选型原则是:5. The design method of an integrated semiconductor refrigeration heat dissipation package structure according to claim 4, wherein the selection principle of the semiconductor refrigerator is: (1)确定制冷器的工作状态;根据工作电流的方向和大小决定制冷器的制冷,加热和恒温性能;(1) Determine the working state of the refrigerator; determine the refrigeration, heating and constant temperature performance of the refrigerator according to the direction and size of the working current; (2)确定制冷时热端实际温度;因为制冷器是温差器件,要达到最佳的制冷效果,制冷器必须安装在散热器上,根据散热条件的好坏决定制冷时制冷器热端的实际温度;由于温度梯度的影响,制冷器热端实际温度要比散热器表面温度高;同样,除了热端存在散热梯度外,被冷却的空间与制冷器冷端之间也存在温度梯度;(2) Determine the actual temperature of the hot end during cooling; because the refrigerator is a temperature difference device, in order to achieve the best cooling effect, the refrigerator must be installed on the radiator, and the actual temperature of the hot end of the refrigerator during cooling is determined according to the quality of the heat dissipation conditions. ; Due to the influence of the temperature gradient, the actual temperature of the hot end of the refrigerator is higher than the surface temperature of the radiator; similarly, in addition to the heat dissipation gradient at the hot end, there is also a temperature gradient between the cooled space and the cold end of the refrigerator; (3)确定制冷器工作环境和气氛;确定工作环境是在真空状况或是在常温常压大气环境下;确定气氛环境是干燥氮气或其它保护性气体、静止或流动空气及周围的环境温度,由此来考虑保温或绝热措施,并决定漏热的影响;(3) Determine the working environment and atmosphere of the refrigerator; determine whether the working environment is in a vacuum condition or in an atmospheric environment of normal temperature and pressure; determine that the atmospheric environment is dry nitrogen or other protective gases, static or flowing air and the surrounding ambient temperature, From this, thermal insulation or insulation measures are considered and the effect of heat leakage is determined; (4)确定制冷器工作对象、热负载和冷损的大小;除了受热端温度影响外,制冷器所能达到的最低温度或最大温差是在空载和绝热两个条件下确定的,实际上,制冷器达不到真正绝热,其也有热负载;(4) Determine the working object, heat load and cooling loss of the refrigerator; in addition to being affected by the temperature of the hot end, the minimum temperature or the maximum temperature difference that the refrigerator can reach is determined under two conditions of no-load and adiabatic, in fact , the refrigerator can not achieve true adiabatic, it also has a thermal load; (5)确定制冷器的级数;制冷器级数的选定必需满足实际温差的要求,制冷器标称的温差必需高于实际要求的温差,达到设计要求;级数的选定兼顾成本;(5) Determine the number of stages of the refrigerator; the selection of the stage number of the refrigerator must meet the requirements of the actual temperature difference, and the nominal temperature difference of the refrigerator must be higher than the actual required temperature difference to meet the design requirements; the selection of the number of stages takes into account the cost; (6)制冷器的规格;选定制冷器的级数后即可选定制冷器的规格,特别是制冷器的工作电流;由于本图像传感器的类型和工作条件所决定,通常选用工作电流最小的制冷器;(6) The specifications of the refrigerator; the specifications of the refrigerator can be selected after the number of stages of the refrigerator is selected, especially the working current of the refrigerator; due to the type and working conditions of the image sensor, the smallest working current is usually selected. the refrigerator; (7)确定电堆的数量;根据能满足温差要求的制冷器制冷总功率来决定,保证在工作温度时制冷器冷量总和大于工作对象热负载的总功率。(7) Determine the number of stacks; it is determined according to the total cooling power of the refrigerator that can meet the requirements of the temperature difference, to ensure that the total cooling capacity of the refrigerator is greater than the total power of the thermal load of the working object at the working temperature.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119178461A (en) * 2024-11-22 2024-12-24 山西创芯光电科技有限公司 Anti-interference infrared detection chip packaging structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207820427U (en) * 2017-12-28 2018-09-04 比亚迪股份有限公司 A kind of radiator
CN110752198A (en) * 2019-10-28 2020-02-04 中国电子科技集团公司第四十四研究所 Back-illuminated avalanche gain type EMCCD refrigeration packaging structure and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207820427U (en) * 2017-12-28 2018-09-04 比亚迪股份有限公司 A kind of radiator
CN110752198A (en) * 2019-10-28 2020-02-04 中国电子科技集团公司第四十四研究所 Back-illuminated avalanche gain type EMCCD refrigeration packaging structure and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119178461A (en) * 2024-11-22 2024-12-24 山西创芯光电科技有限公司 Anti-interference infrared detection chip packaging structure

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