CN114188476A - A kind of indirect heating type Ge-Sb-Te base phase change radio frequency switch and preparation method thereof - Google Patents
A kind of indirect heating type Ge-Sb-Te base phase change radio frequency switch and preparation method thereof Download PDFInfo
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- CN114188476A CN114188476A CN202111391172.2A CN202111391172A CN114188476A CN 114188476 A CN114188476 A CN 114188476A CN 202111391172 A CN202111391172 A CN 202111391172A CN 114188476 A CN114188476 A CN 114188476A
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/8413—Electrodes adapted for resistive heating
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Abstract
The invention discloses an indirect heating type Ge-Sb-Te base phase change radio frequency switch and a preparation method thereof. The device comprises a heating layer, a heat insulation layer, a Ge-Sb-Te base phase change layer and a radio frequency transmission layer from bottom to top, wherein the patterning of each layer is realized by an electron beam lithography overlay process, the Ge-Sb-Te base phase change layer is realized by a pulse laser deposition technology, and the heating mode is indirect heating. The phase-change radio frequency switch realizes the switch of radio frequency transmission by changing the resistivity of the phase-change material in a crystalline state and an amorphous state through pulse heating. The phase-change radio-frequency switch in the embodiment of the invention is manufactured on the basis of the existing mature silicon semiconductor processing technology, so that the reliability of the phase-change switch can be improved, and meanwhile, the manufacturing technology of the phase-change switch is simpler, the cost is lower and the integration level is better.
Description
Technical Field
The invention relates to the technical field of phase change radio frequency switch preparation, in particular to an indirect heating type Ge-Sb-Te base phase change radio frequency switch and a preparation method thereof, wherein the indirect heating type Ge-Sb-Te base phase change radio frequency switch has the advantages of simple process, low cost, high switching speed, small volume, long service life, simple structure, easiness in integration with a CMOS (complementary metal oxide semiconductor) and easiness in packaging.
Background
With the continuous development of electronic technology, microwave rf switches play an increasingly important role in the fields of military radar, communication, electronic countermeasure, and the like, as well as in civil communication systems. On the other hand, in the modern electronic war era, in order to realize switching of communication signal channels and to prevent interference of a complicated electromagnetic environment, overall performance requirements such as switching speed and power capacity are becoming higher and higher. The microwave radio frequency switch can meet the switching of various wireless access modes, can better solve the coverage problem in different network migration processes, and is widely applied. Among other things, rf switches are used in applications to maintain the switch in a low energy on and off state, thereby reducing power consumption. On the other hand, the development and Research of radio frequency switches is not being done all over the world, and according to the statistics of QYR Electronics Research Center, the global radio frequency switch market has experienced continuous rapid growth since 2010, the global market size reached $ 12.57 billion in 2016, and the increase rate slowed down after 2017, but the annual growth rate of 10% was maintained by 2020.
Commonly used radio frequency switches include PIN diode switches, FET Field Effect Transistor (FET) switches, and RF-mems (micro Electro Mechanical systems) switches.
Disclosure of Invention
In view of the defects of the existing radio frequency switch, the invention aims to provide an indirect heating type Ge-Sb-Te base phase change radio frequency switch and a preparation method thereof, and provides a new thought for the development of a next generation novel radio frequency switch. Compared to PIN switches and FET transistor switches, phase change switches have smaller on-resistance, relatively lower insertion loss, higher isolation and higher cut-off frequency in high frequency applications. Moreover, compared with FET transistor switches, phase change switches can be applied to radio frequency circuits of 60 GHz-100 GHz; compared with an RF-MEMS switch, the phase-change switch has the advantages of high switching speed, small volume, long service life, simple structure, easy integration with a CMOS (complementary metal oxide semiconductor), easy packaging and the like, which means that the phase-change switch has simpler manufacturing process, lower cost and better integration level.
The specific technical scheme for realizing the purpose of the invention is as follows:
a preparation method of an indirect heating type Ge-Sb-Te base phase change radio frequency switch comprises the following specific steps:
firstly, selecting high-resistance single crystal Si as a substrate, cleaning, carrying out electron beam photoetching patterning, carrying out electron beam evaporation deposition on a W or TaN metal heating electrode with the thickness of 70-200 nm and a next layer of alignment mark, wherein the width of a heating area is 0.5-1 mu m, the length is 5-20 mu m, removing photoresist and cleaning to obtain a heating layer;
secondly, carrying out electron beam lithography overlay patterning on the upper surface of the heating layer according to cross mark alignment, and carrying out magnetron sputtering deposition on SiO with the thickness of 100-150 nm2Or Ta2O5And the next layer of the overlay mark, removing the photoresist and cleaning to obtain a heat insulation layer;
thirdly, after carrying out electron beam photoetching, overlaying and patterning on the upper surface of the heat-insulating layer according to the alignment of the cross marks, depositing a Ge-Sb-Te base phase-change material with the thickness of 100-200 nm and a next layer of overlaying mark by using pulse laser, removing photoresist and cleaning to obtain a phase-change layer;
and fourthly, after electron beam photoetching, overlaying and patterning are carried out on the upper surface of the phase change layer according to cross mark alignment, depositing Cr/Au as a radio frequency transmission layer through thermal evaporation, wherein the thickness of the Cr layer is 7-20 nm, the adhesion of electrodes is increased, the thickness of the Au layer is 100-200 nm, and a complete four-terminal radio frequency phase change switch is obtained after photoresist removal and cleaning.
The resistivity of the high-resistance single crystal Si substrate is at least 10000 omega cm.
The Ge-Sb-Te based phase change material is Ge2Sb2Te5、Sb2Te3、Sb2Te、GeSb2Te4Or GeTe.
An indirect heating type Ge-Sb-Te base phase change radio frequency switch prepared by the method.
Compared with the prior art, the phase change radio frequency switch has the greatest advantages that the phase change radio frequency switch in the embodiment of the invention is processed by adopting a Si semiconductor mature process, the heating mode of the device is indirect heating, and the heating efficiency is improved, so that the reliability of the phase change radio frequency switch can be improved, the process is simplified, and the process cost of the phase change radio frequency switch integrated chip can be reduced.
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Fig. 1 is a schematic flow chart illustrating an implementation of a method for manufacturing a phase-change radio frequency switch according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a radio frequency transmission line model CPW according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a W heater electrode according to an embodiment of the present invention;
FIG. 4 is a schematic longitudinal sectional view of a W heating electrode provided in an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a thermal insulation layer provided in an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a phase change material film provided by an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of a contact electrode provided in an embodiment of the present invention;
FIG. 8 is a schematic longitudinal sectional view of a phase change RF switch according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of an equivalent circuit of a phase change RF switch according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of an equivalent circuit heat transfer path of a phase change RF switch according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of an equivalent circuit RF transmission path of the phase change RF switch according to an embodiment of the invention
FIG. 12 is a schematic diagram illustrating the switching operation of a phase change RF switch according to an embodiment of the present invention;
FIG. 13 is a diagram illustrating the insertion loss of the phase change RF switch in the range of DC-10GHz according to an embodiment of the present invention;
FIG. 14 is a graph showing the isolation of the phase change RF switch of the embodiment of the present invention in the DC-10GHz range.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic flow chart of an implementation of a method for manufacturing an indirect heating type Ge-Sb-Te-based phase-change radio frequency switch according to an embodiment of the present invention, which is described in detail below.
optionally, the resistivity of the high-resistance single crystal Si substrate is not less than 10000 Ω & cm;
optionally, the crystal orientation adopted by the high-resistance single crystal Si substrate is a (100) crystal orientation. One of the essential characteristics of crystals is their directionality, and their properties vary along the different directions of the crystal lattice. The lattice points of the bravais lattice can be viewed as being arranged in a series of mutually parallel linear systems, which are referred to as lattice columns. The same lattice point can form crystal columns with different directions, and each crystal column defines one direction, which is called crystal direction. Here, (100) the crystal orientation refers to an atom passing on a straight line passing through an origin and a point x being 1, y being 0, and z being 0;
w heating electrode schematic diagrams as shown in FIG. 3 and FIG. 4, wherein the heating area size LheaterIs 1 mu m WheaterIs 10 μm, thickness Theater70nm, square external electrode contact and side length Dheater50 μm, and a bridge length H to the heating regionheaterIs 10 μm. TaN is also a commonly used thin film resistor material and has a resistivity similar to W, so it is also possible to replace the original W heating layer with TaN.
102, carrying out electron beam lithography overlay patterning on the upper surface of the heating layer according to cross mark alignment, and carrying out magnetron sputtering deposition on SiO with the thickness of 100nm2Or Ta2O5The heat insulation layer and the next layer of the overlay mark are subjected to photoresist removal and cleaning to obtain a heat insulation layer;
optionally, a schematic cross-sectional view of the thermal insulation layer shown in fig. 5 and a schematic longitudinal cross-sectional view of the phase-change rf switch shown in fig. 8 are provided. The heat insulation layer is used for completely isolating the W heating electrode and the phase change layer, so that the W heating electrode and the phase change layer are prevented from being short-circuited to cause failure of a device;
optionally, the thermal insulation layer may be prepared by a magnetron sputtering method. The thickness of the heat insulation layer is 100 nm. The isolation medium adopted by the thermal insulation layer is SiO2。
103, after carrying out electron beam lithography overlay patterning on the upper surface of the heat insulation layer according to the alignment of the cross mark, depositing a Ge-Sb-Te base phase change material with the thickness of 100nm as a phase change layer and a mark for next layer overlay by using pulse laser, and removing photoresist and cleaning to obtain a phase change layer;
optionally, as shown in a schematic cross-sectional view of the phase change layer in fig. 6 and a schematic longitudinal cross-sectional view of the phase change rf switch in fig. 8, the phase change layer is located on the isolation layer, and the length of the phase change material film is smaller than the length of the isolation layer, and the width of the phase change material film is smaller than both the width of the semiconductor heating resistor and the width of the isolation layer;
optionally, the phase change material adopted by the Ge-Sb-Te based phase change material is Ge2Sb2Te5Phase change material, the phase change layerIs 100 nm. The pulsed laser deposition parameters were set as follows: the laser frequency was 5Hz, the TS distance was 5.5cm, the deposition pressure was 2Pa and the deposition temperature was room temperature.
104, performing electron beam lithography, alignment and patterning on the upper surface of the phase change layer according to cross mark alignment, performing thermal evaporation and deposition of Cr/Au to serve as a radio frequency transmission layer, wherein the thickness of the Cr layer is 7nm, the thickness of the Au layer is 100nm, and removing photoresist and cleaning to obtain a complete four-terminal radio frequency phase change switch;
as shown in the cross-sectional view of the rf transmission electrode shown in fig. 7, a complete four-terminal rf phase change switch has four ports, namely two heating electrode pressurizing contact ports and two rf transmission electrode ports;
as shown in the schematic diagram of the radio frequency transmission line model CPW shown in FIG. 2, the thickness of the Cr layer in the Cr/Au radio frequency transmission layer is 7nm, the thickness of the Au layer, namely T, is 100nm, according to the CPW transmission line model, the ideal designed impedance of the switch is generally 50 Ω, because the adopted metal is Au, the thickness of the high-resistance single crystal Si substrate, namely H, is 1mm, the designed transmission line gap G is 30 μm, and the middle transmission line width W is 1mmAuIs 50 μm;
as shown in the schematic longitudinal sectional view of the phase-change rf switch in fig. 8, a complete four-terminal rf phase-change switch is, from bottom to top: high-resistance monocrystal Si substrate 1, W heating electrode 2, SiO2 heat-insulating layer 3 and Ge2Sb2Te5A phase change layer 4 and a Cr/Au radio frequency transmission layer 5.
The device prepared by the phase-change radio frequency switch preparation method is subjected to switching operation of the switch shown in fig. 12, namely, a pulse level with a pulse width of 7V of 1 mus is applied for switching operation, and a pulse level with a pulse width of 12V of 200ns is applied for switching operation. And performing radio frequency transmission characterization on the phase change radio frequency switch in the on-state and the off-state within the range of DC-10GHz, wherein a radio frequency test I is a test of a transmission path from a radio frequency end A to a radio frequency end B, and a radio frequency test II is a test of a transmission path from the radio frequency end B to the radio frequency end A, and the results are shown in fig. 13 and 14.
As shown in fig. 9, which is an equivalent circuit of the phase-change rf switch according to the embodiment of the present invention, the Ge-Sb-Te-based phase-change thin film has a very high resistivity in an amorphous state and a very low resistivity in a crystalline state, and a change value of the resistivity reaches four to five orders of magnitude. When the film is in a high-resistance state, the radio-frequency signal can be isolated and reflected back to the input end, the radio-frequency signal cannot be transmitted continuously, and the switch is in an off state. When the film is in a low-resistance state, the radio-frequency signal can smoothly pass through the phase-change film, and the switch is in a conducting state. The phase change film can be repeatedly switched between two states by using a pulse current or a pulse voltage, and the stability is maintained. Thus, in the off state, the phase change layer may be considered to be in series with a capacitor having a capacitance of C in the equivalent circuit, and in the on state, the phase change layer may be considered to be in series with a small resistance having a resistance of R in the equivalent circuit. During the switching operation, the heat transmission path can locally heat the phase-change material region mainly through two heating ports, namely a heating port a and a heating port b, as shown by arrows in fig. 10, namely, a pulse voltage is generated by a pulse current, and joule heat is generated by a heating electrode to crystallize and amorphize the phase-change material; the rf transmission path is mainly through two rf ports and the phase change material region as indicated by arrows in fig. 11. Wherein R isHeaterAnd RHIs a heating resistor, C1And C12Is an OFF state equivalent capacitance, R1、R12And R13Is an "ON" state equivalent resistance; RF terminals A and B, small parallel plate capacitance C formed between deposited gold metal lines and the substratePSmall parasitic resistance R between radio frequency port and external circuitSAnd a small parasitic inductance LSThese are negligible.
According to the invention, the phase change radio frequency switch device is processed by utilizing the Si semiconductor mature process, the heating mode of the device is indirect heating, and the heating efficiency is improved, so that the reliability of the phase change switch can be improved, the process is simplified, and the process cost of the phase change radio frequency switch integrated chip can be reduced.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (4)
1. The preparation method of the indirect heating type Ge-Sb-Te base phase change radio frequency switch is characterized by comprising the following specific steps of:
firstly, selecting high-resistance single crystal Si as a substrate, cleaning, carrying out electron beam photoetching patterning, carrying out electron beam evaporation deposition on a W or TaN metal heating electrode with the thickness of 70-200 nm and a next layer of alignment mark, wherein the width of a heating area is 0.5-1 mu m, the length is 5-20 mu m, removing photoresist and cleaning to obtain a heating layer;
secondly, carrying out electron beam lithography overlay patterning on the upper surface of the heating layer according to cross mark alignment, and carrying out magnetron sputtering deposition on SiO with the thickness of 100-150 nm2Or Ta2O5And the next layer of the overlay mark, removing the photoresist and cleaning to obtain a heat insulation layer;
thirdly, after carrying out electron beam photoetching, overlaying and patterning on the upper surface of the heat-insulating layer according to the alignment of the cross marks, depositing a Ge-Sb-Te base phase-change material with the thickness of 100-200 nm and a next layer of overlaying mark by using pulse laser, removing photoresist and cleaning to obtain a phase-change layer;
and fourthly, after electron beam photoetching, overlaying and patterning are carried out on the upper surface of the phase change layer according to cross mark alignment, depositing Cr/Au as a radio frequency transmission layer through thermal evaporation, wherein the thickness of the Cr layer is 7-20 nm, the adhesion of electrodes is increased, the thickness of the Au layer is 100-200 nm, and a complete four-terminal radio frequency phase change switch is obtained after photoresist removal and cleaning.
2. The method for preparing a phase-change radio frequency switch according to claim 1, wherein the resistivity of the high-resistance single-crystal Si substrate is at least 10000 Ω -cm.
3. The method of claim 1, wherein the Ge-Sb-Te based phase change material is Ge2Sb2Te5、Sb2Te3、Sb2Te、GeSb2Te4Or GeTe.
4. An indirectly heated Ge-Sb-Te based phase change radio frequency switch made by the method of claim 1.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115132921A (en) * | 2022-06-28 | 2022-09-30 | 华中科技大学 | Radio frequency switch device based on phase change material and preparation method thereof |
| CN117998974A (en) * | 2024-01-15 | 2024-05-07 | 电子科技大学 | Preparation method of box-shaped indirect heating type phase change switching device |
| TWI872582B (en) * | 2022-06-29 | 2025-02-11 | 台灣積體電路製造股份有限公司 | Pcm device, pcm rf switch and forming method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2938012B1 (en) * | 1998-04-07 | 1999-08-23 | 株式会社日立製作所 | Multilayer film forming apparatus and multilayer film forming method |
| US20050048414A1 (en) * | 2003-08-26 | 2005-03-03 | Oliver Harnack | Method for patterning organic materials or combinations of organic and inorganic materials |
| US9368720B1 (en) * | 2014-05-06 | 2016-06-14 | Hrl Laboratories, Llc | Method to make phase-change material RF switches with thermal dielectrics |
| CN111129295A (en) * | 2019-12-06 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Phase change radio frequency switch manufacturing method |
| CN113267907A (en) * | 2021-05-14 | 2021-08-17 | 北京工业大学 | Based on phase change material GemSbnTekGraphene auxiliary driving micro-ring optical switch |
| CN113517394A (en) * | 2020-04-09 | 2021-10-19 | 英飞凌科技股份有限公司 | Phase change switch with multi-faceted heater configuration |
-
2021
- 2021-11-23 CN CN202111391172.2A patent/CN114188476A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2938012B1 (en) * | 1998-04-07 | 1999-08-23 | 株式会社日立製作所 | Multilayer film forming apparatus and multilayer film forming method |
| US20050048414A1 (en) * | 2003-08-26 | 2005-03-03 | Oliver Harnack | Method for patterning organic materials or combinations of organic and inorganic materials |
| US9368720B1 (en) * | 2014-05-06 | 2016-06-14 | Hrl Laboratories, Llc | Method to make phase-change material RF switches with thermal dielectrics |
| CN111129295A (en) * | 2019-12-06 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Phase change radio frequency switch manufacturing method |
| CN113517394A (en) * | 2020-04-09 | 2021-10-19 | 英飞凌科技股份有限公司 | Phase change switch with multi-faceted heater configuration |
| CN113267907A (en) * | 2021-05-14 | 2021-08-17 | 北京工业大学 | Based on phase change material GemSbnTekGraphene auxiliary driving micro-ring optical switch |
Non-Patent Citations (2)
| Title |
|---|
| AMINE MENNAI等: "Bistable RF Switches Using Ge2Sb2Te5 Phase Change Material", 2015 EUROPEAN MICROWAVE CONFERENCE, 31 December 2015 (2015-12-31), pages 945 - 947 * |
| 顾文琪: "电子束曝光微纳加工技术", vol. 1, 31 July 2004, 北京工业大学出版社, pages: 176 - 177 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115132921A (en) * | 2022-06-28 | 2022-09-30 | 华中科技大学 | Radio frequency switch device based on phase change material and preparation method thereof |
| TWI872582B (en) * | 2022-06-29 | 2025-02-11 | 台灣積體電路製造股份有限公司 | Pcm device, pcm rf switch and forming method thereof |
| CN117998974A (en) * | 2024-01-15 | 2024-05-07 | 电子科技大学 | Preparation method of box-shaped indirect heating type phase change switching device |
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