CN111129295A - Phase change radio frequency switch manufacturing method - Google Patents
Phase change radio frequency switch manufacturing method Download PDFInfo
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- CN111129295A CN111129295A CN201911242574.9A CN201911242574A CN111129295A CN 111129295 A CN111129295 A CN 111129295A CN 201911242574 A CN201911242574 A CN 201911242574A CN 111129295 A CN111129295 A CN 111129295A
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Abstract
本发明适用于相变射频开关器件技术领域，提供了一种相变射频开关制造方法，该方法包括：通过在预设半导体绝缘衬底上制备半导体加热电阻，并在半导体加热电阻的两端分别制备电阻加电电极，获得第一样品；在除电阻加电电极之外的第一样品的表面制备隔离层，在隔离层上半导体加热电阻对应位置处制备相变材料薄膜，并在相变材料薄膜的两端分别制备接触电极，获得第二样品，电阻加电电极的方向与接触电极的方向相互垂直；在第二样品的表面制备钝化层，获得相变射频开关。本发明实施例中的相变射频开关是采用半导体材料制作开态关态触发电阻加热器，从而可以提高相变开关可靠性，简化工艺，同时还可以降低相变射频开关集成芯片的工艺成本。
The present invention is applicable to the technical field of phase-change radio frequency switching devices, and provides a method for manufacturing a phase-change radio frequency switch. The method includes: preparing a semiconductor heating resistor on a preset semiconductor insulating substrate, and placing two ends of the semiconductor heating resistor respectively Prepare a resistance electrified electrode to obtain a first sample; prepare an isolation layer on the surface of the first sample except the resistance electrification electrode, prepare a phase change material film on the isolation layer at the position corresponding to the semiconductor heating resistor, and prepare a phase change material film on the surface of the first sample except the resistance electrification electrode. Contact electrodes are respectively prepared at both ends of the change material film to obtain a second sample, and the direction of the resistance-charged electrodes is perpendicular to the direction of the contact electrodes; a passivation layer is prepared on the surface of the second sample to obtain a phase-change radio frequency switch. The phase change radio frequency switch in the embodiment of the present invention uses semiconductor materials to make on-state and off-state trigger resistance heaters, thereby improving the reliability of the phase change switch, simplifying the process, and reducing the process cost of the phase change radio frequency switch integrated chip.
Description
Technical Field
The invention belongs to the technical field of phase change radio frequency switch devices, and particularly relates to a manufacturing method of a phase change radio frequency switch.
Background
Radio frequency switch at radio frequencyThe subsystem has wide application. In order to satisfy the performance of the rf electronic system, the rf switch needs to have the following characteristics: low insertion loss, high isolation, good linearity, easy integration and low cost. In recent years, VO is used2Phase change radio frequency switches based on GeTe and GeTe based phase change materials can meet the above requirements. However, the phase change switch is generally manufactured based on a semiconductor substrate, and is switched by heating a thin film resistor of NiCrSi, TaN or W, etc., and the on-state and off-state switching temperatures of the phase change material are high, so the NiCrSi, TaN or W thin film resistor for switching has a problem of reliability and a problem of complicated processing technology.
Disclosure of Invention
In view of this, the embodiment of the present invention provides a method for manufacturing a phase-change rf switch, so as to solve the problems in the prior art that the resistance of a NiCrSi, TaN, or W thin film for switching is low in reliability and the processing technology is complex.
A first aspect of an embodiment of the present invention provides a method for manufacturing a phase-change radio frequency switch, including:
preparing a semiconductor heating resistor on a preset semiconductor insulating substrate, and respectively preparing resistor adding electrodes at two ends of the semiconductor heating resistor to obtain a first sample;
preparing an isolation layer on the surface of the first sample except the resistance charging electrode, preparing a phase-change material film on the isolation layer at a position corresponding to the semiconductor heating resistor, and preparing contact electrodes at two ends of the phase-change material film respectively to obtain a second sample, wherein the direction of the resistance charging electrode is vertical to the direction of the contact electrodes;
and preparing a passivation layer on the surface of the second sample to obtain the phase-change radio-frequency switch.
In one embodiment, the predetermined semiconductor insulating substrate is a semi-insulating GaAs single crystal substrate, and the concentration of GaAs in the semi-insulating GaAs single crystal substrate is 1E17/cm3。
In one embodiment, the semi-insulating GaAs single crystal substrate has a (100) crystal orientation.
In one embodiment, the preparing a semiconductor heating resistor on a predetermined semiconductor insulating substrate and preparing resistance electrodes at two ends of the semiconductor heating resistor respectively to obtain a first sample includes:
growing a semiconductor conductive epitaxial layer on a preset semiconductor insulating substrate;
electrically isolating two ends of the semiconductor conductive epitaxial layer by adopting an ion implantation or chemical corrosion process to obtain a semiconductor heating resistor; the two ends of the semiconductor conductive epitaxial layer are two ends of the semiconductor heating resistor in the X-axis direction of the plane by taking the plane parallel to each layer of the phase-change radio frequency switch as a reference;
manufacturing a semiconductor ohmic contact at a first preset position of the semiconductor heating resistor to form a resistor power-on electrode, and obtaining a first sample; the first preset position is two ends of the semiconductor heating resistor in the X-axis direction of the plane.
In one embodiment, the resistive heating electrode is a metal or multi-layer metal structure that forms an ohmic contact with the corresponding semiconductor heating resistor.
In one embodiment, the thickness of the isolation layer is
The isolation medium adopted by the isolation layer is SiO2SiN, or AlN.
In an embodiment, the preparing a phase-change material film at a position on the isolation layer corresponding to the semiconductor heating resistor, and preparing contact electrodes at two ends of the phase-change material film, respectively, to obtain a second sample includes:
preparing a phase-change material film on the isolation layer within the range corresponding to the semiconductor heating resistor, so that the isolation layer completely isolates the semiconductor heating resistor from the phase-change material film;
manufacturing a semiconductor ohmic contact at a second preset position of the phase-change material film to form a contact electrode, and obtaining a second sample; the second preset position is two ends of the phase-change material film in the Y-axis direction of the plane, and the two contact electrodes do not completely cover the phase-change material film in the Y-axis direction.
In one embodiment, the thickness of the phase change material film is
The phase-change material adopted by the phase-change material film is GeTe or VO2。
In one embodiment, the contact electrode is a metal or a multi-layer metal structure forming ohmic contact with the corresponding semiconductor heating resistor.
In one embodiment, the thickness of the passivation layer is
The passivation medium adopted by the passivation layer is SiO2Or SiN.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: preparing a semiconductor heating resistor on a preset semiconductor insulating substrate, and respectively preparing resistor adding electrodes at two ends of the semiconductor heating resistor to obtain a first sample; preparing an isolation layer on the surface of the first sample except the resistance charging electrode, preparing a phase-change material film on the isolation layer at a position corresponding to the semiconductor heating resistor, and preparing contact electrodes at two ends of the phase-change material film respectively to obtain a second sample, wherein the direction of the resistance charging electrode is vertical to the direction of the contact electrodes; and preparing a passivation layer on the surface of the second sample to obtain the phase-change radio-frequency switch. The phase change radio frequency switch in the embodiment of the invention adopts the semiconductor material to manufacture the on-state and off-state trigger resistance heater, thereby improving the reliability of the phase change switch, simplifying the process and simultaneously reducing the process cost of the phase change radio frequency switch integrated chip.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart illustrating an implementation of a method for manufacturing a phase-change rf switch according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of an implementation of obtaining a first sample according to an embodiment of the present invention;
FIG. 3(1) is a schematic diagram of a semiconductor heating resistor according to an embodiment of the present invention;
FIG. 3(2) is a schematic cross-sectional view of a resistive powered electrode according to an embodiment of the present invention;
FIG. 4(1) is a schematic cross-sectional view of an isolation layer according to an embodiment of the invention;
FIG. 4(2) is a schematic cross-sectional view of a phase-change material film according to an embodiment of the present invention;
fig. 4(3) is a schematic cross-sectional view of a contact electrode according to an embodiment of the invention;
FIG. 5 is a schematic longitudinal sectional view of a phase change RF switch according to an embodiment of the invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic flow chart of an implementation of a method for manufacturing a phase-change rf switch according to an embodiment of the present invention, which is described in detail below.
Optionally, the preset semiconductor insulating substrate is a semi-insulating GaAs single crystal substrate, and the concentration of GaAs in the semi-insulating GaAs single crystal substrate is 1E17/cm3。
Optionally, the semi-insulating GaAs single crystal substrate has a (100) crystal orientation. One of the essential characteristics of crystals is their directionality, and their properties vary along the different directions of the crystal lattice. The lattice points of the bravais lattice can be viewed as being arranged in a series of mutually parallel linear systems, which are referred to as lattice columns. The same lattice point can form crystal columns with different directions, and each crystal column defines one direction, which is called crystal direction. Here, the crystal orientation (100) refers to an atom passing on a straight line passing through the origin and the point x being 1, y being 0, and z being 0.
Alternatively, as shown in fig. 2, the present step may include the following steps.
The semiconductor used for the semiconductor conductive epitaxial layer can be GaAs.
As shown in fig. 3(1), with reference to a plane parallel to each layer of the phase-change rf switch, two ends of the semiconductor conductive epitaxial layer are two ends of the semiconductor heating resistor in the X-axis direction of the plane.
Optionally, the first preset position is two ends of the semiconductor heating resistor in the X-axis direction of the plane. The cross-sectional view of the resistive charging electrode is shown in FIG. 3 (2).
Optionally, in this step, an evaporation stripping process may be used to fabricate the resistive electrode. The resistance charging electrode adopts a metal or multilayer metal structure which forms ohmic contact with the corresponding semiconductor heating resistor. Optionally, the metal used for the resistive charging electrode or the metal used for the multilayer metal structure may be any one of Au, Ge, or Ni.
102, preparing an isolation layer on the surface of the first sample except the resistance charging electrode, preparing a phase-change material film on the isolation layer at a position corresponding to the semiconductor heating resistor, and preparing contact electrodes at two ends of the phase-change material film respectively to obtain a second sample, wherein the direction of the resistance charging electrode is perpendicular to the direction of the contact electrodes.
Alternatively, the schematic cross-sectional view of the isolation layer shown in fig. 4(1) and the schematic longitudinal cross-sectional view of the phase-change rf switch shown in fig. 5 are shown. And preparing an isolation layer on the surface of the semiconductor heating resistor except the resistance adding electrode, wherein the isolation layer is used for completely isolating the semiconductor heating resistor and the phase change material film, so that the semiconductor heating resistor and the phase change switch are prevented from being electrically interconnected and intercommunicated.
Alternatively, the isolation layer may be prepared by a Chemical Vapor Deposition (CVD) method or a sputtering method. The thickness of the isolating layer is
The isolation medium adopted by the isolation layer is SiO2SiN, or AlN.
Optionally, the step of preparing the phase-change material film and the contact electrode may include: and preparing a phase-change material film on the isolation layer within the corresponding range of the semiconductor heating resistor, so that the isolation layer completely isolates the semiconductor heating resistor from the phase-change material film. Optionally, the phase-change material film may be prepared by a process sputtering or evaporation method. Then, making a semiconductor ohmic contact at a second preset position of the phase-change material film to form a contact electrode, and obtaining a second sample; the second preset position is two ends of the phase-change material film in the Y-axis direction of the plane, and the two contact electrodes do not completely cover the phase-change material film in the Y-axis direction.
As shown in fig. 4(2), the phase-change material film is located on the isolation medium, and the length of the phase-change material film is smaller than the length of the isolation layer, and the width of the phase-change material film is smaller than both the width of the semiconductor heating resistor and the width of the isolation layer.
Optionally, the thickness of the phase change material film is
The phase-change material adopted by the phase-change material film is GeTe or VO2。
Optionally, when the contact electrode connected to the phase-change film is prepared, the contact electrode can be manufactured by a semiconductor process sputtering or evaporation method. The contact electrode may be a metal or a multi-layered metal structure that forms an ohmic contact with the corresponding semiconductor heating resistor. The metal used for the contact electrode or the metal used for the multilayer metal structure may be Ti, Al, Pt, or the like.
Fig. 4(3) shows a cross-sectional view of the contact electrode, and fig. 5 shows a longitudinal cross-sectional view of the phase-change rf switch. The length of the contact electrode is larger than that of the phase-change material film, and the width of the contact electrode covering the phase-change material film is smaller than half of the width of the phase-change material film, namely the contact electrode does not completely cover the phase-change material film in the width direction (Y-axis direction). Alternatively, the upper contact electrode may be a Radio Frequency (RF) entrance electrode, and the lower contact electrode may be an RF exit electrode.
And 103, preparing a passivation layer on the surface of the second sample to obtain the phase-change radio-frequency switch.
Optionally, a passivation layer is prepared on the surface of the second sample by using a CVD method, that is, as shown in fig. 5, a passivation layer is prepared on the phase change material film and the two contact electrodes, and the thickness of the passivation layer is
The passivation medium adopted by the passivation layer is SiO2Or SiN.
The phase change radio frequency switch manufacturing method comprises the steps of preparing a semiconductor heating resistor on a preset semiconductor insulating substrate, and preparing resistance adding electrodes at two ends of the semiconductor heating resistor respectively to obtain a first sample; preparing an isolation layer on the surface of the first sample except the resistance charging electrode, preparing a phase-change material film on the isolation layer at a position corresponding to the semiconductor heating resistor, and preparing contact electrodes at two ends of the phase-change material film respectively to obtain a second sample, wherein the direction of the resistance charging electrode is vertical to the direction of the contact electrodes; and preparing a passivation layer on the surface of the second sample to obtain the phase-change radio-frequency switch. The phase change radio frequency switch in the embodiment of the invention adopts the semiconductor material to manufacture the on-state and off-state trigger resistance heater, thereby improving the reliability of the phase change switch, simplifying the process and simultaneously reducing the process cost of the phase change radio frequency switch integrated chip.
The embodiment of the invention also provides a phase-change radio-frequency switch device which comprises the phase-change radio-frequency switch manufactured by adopting the phase-change radio-frequency switch manufacturing method provided by any one of the embodiments, and meanwhile, the phase-change radio-frequency switch manufacturing method provided by any one of the embodiments has the beneficial effects.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
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Cited By (4)
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| CN112736048A (en) * | 2020-12-29 | 2021-04-30 | 中国电子科技集团公司第十三研究所 | Radio frequency phase change switch |
| CN114188476A (en) * | 2021-11-23 | 2022-03-15 | 华东师范大学 | A kind of indirect heating type Ge-Sb-Te base phase change radio frequency switch and preparation method thereof |
| CN114188475A (en) * | 2021-11-23 | 2022-03-15 | 华东师范大学 | Embedded indirect heating type Ge-Sb-Te base phase change radio frequency switch and preparation method thereof |
| CN117040445A (en) * | 2023-07-08 | 2023-11-10 | 湖北九峰山实验室 | High-performance frequency multiplier based on phase change material resistor |
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| CN114188475A (en) * | 2021-11-23 | 2022-03-15 | 华东师范大学 | Embedded indirect heating type Ge-Sb-Te base phase change radio frequency switch and preparation method thereof |
| CN117040445A (en) * | 2023-07-08 | 2023-11-10 | 湖北九峰山实验室 | High-performance frequency multiplier based on phase change material resistor |
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