CN114038960A - Micro light emitting diode epitaxial structure, manufacturing method thereof and micro light emitting diode - Google Patents
Micro light emitting diode epitaxial structure, manufacturing method thereof and micro light emitting diode Download PDFInfo
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Abstract
本发明涉及微发光二极管磊晶结构及其制造方法、微发光二极管，所述微发光二极管磊晶结构包括依次层叠设置的第一半导体层、有源层、第二半导体层；所述有源层包括N层(AlBGa1‑B)0.5In0.5P垒和N+1层(AlAGa1‑A)0.5In0.5P阱。通过N层(AlBGa1‑B)0.5In0.5P垒和N+1层(AlAGa1‑A)0.5In0.5P阱形成3‑5对量子阱，可减少有源层对红光波段的吸收，同时减少了电子空穴的移动空间，以降低电流扩展，在微发光二极管磊晶结构在发光时，可使得光在更低的电流密度下被提取，进而提高微发光二极管磊晶结构的发光效率。
The invention relates to a micro-light-emitting diode epitaxial structure, a manufacturing method thereof, and a micro-light-emitting diode. The micro-light-emitting diode epitaxial structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in sequence; the active layer An N layer (Al B Ga 1-B ) 0.5 In 0.5 P barrier and an N+1 layer (Al A Ga 1-A ) 0.5 In 0.5 P well are included. 3-5 pairs of quantum wells are formed by the N layer (Al B Ga 1-B ) 0.5 In 0.5 P barrier and the N+1 layer (Al A Ga 1-A ) 0.5 In 0.5 P well, which can reduce the effect of the active layer on red light The absorption of the wavelength band reduces the movement space of electron holes to reduce the current expansion. When the micro-LED epitaxial structure emits light, the light can be extracted at a lower current density, thereby improving the micro-LED epitaxial structure. The luminous efficiency of the structure.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro light-emitting diode epitaxial structure, a manufacturing method thereof and a micro light-emitting diode.
Background
The high-brightness light-emitting diode is widely applied, and is an electronic component which generates photons through radiation recombination of conduction band electrons and valence band holes in a semiconductor material and directly converts electric energy into light energy.
The micro light emitting diode chip comprises an active layer, wherein an AlGaInP barrier and an AlGaInP well are arranged in the active layer, the number of layers of the AlGaInP barrier and the AlGaInP well is large in the prior art, the AlGaInP barrier and the AlGaInP well form a quantum well, the active layer of the prior micro light emitting diode chip is provided with 25 pairs or even more pairs of quantum wells, the number of pairs of the quantum wells is increased, the active layer can absorb more light wave bands, the active layer is provided with more pairs of quantum wells, the moving space of electron holes in the active layer is large, light can be extracted only under high current density, and the light emitting efficiency of an epitaxial structure in the light emitting diode chip is low.
Therefore, it is an urgent problem to extract light from the micro led epitaxial structure in advance when the current density is low during light emission.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present application provides a micro light emitting diode epitaxial structure and a method for manufacturing the same, which aims to solve the problem that a higher current density affects the light emitting efficiency when the micro light emitting diode epitaxial structure emits light.
A micro light-emitting diode epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked;
the active layer includes an N layer (Al)BGa1-B)0.5In0.5P barrier and N +1 layer (Al)AGa1-A)0.5In0.5P well in the active layer (Al)BGa1-B)0.5In0.5P barrier and (Al)AGa1-A)0.5In0.5P wells are alternately stacked, wherein B>A，2≤N≤4。
Through N layer (Al)BGa1-B)0.5In0.5P barrier and N +1 layer (Al)AGa1-A)0.5In0.5The P well forms 3-5 pairs of quantum wells, so that the absorption of the active layer to a red light wave band can be reduced, the moving space of electron holes is reduced, the current expansion is reduced, light is extracted at a lower current density when the micro light-emitting diode epitaxial structure emits light, and the light-emitting efficiency of the micro light-emitting diode epitaxial structure is improved.
Optionally, in the (Al)AGa1-A)0.5In0.5In the P trap, A is more than or equal to 0.2 and less than or equal to 0.3; in the presence of (Al)BGa1-B)0.5In0.5In the P base, B is more than or equal to 0.6 and less than or equal to 0.7. By controlling the values of A and B, the probability of electron and hole recombination in the quantum well can be increased, and the luminous efficiency of the micro light-emitting diode epitaxial structure is improved.
Optionally, the thickness of the active layer is 20-50nm, so that the active layer reduces absorption of red light wave bands, and movement space of electron holes in the micro light emitting diode epitaxial structure is reduced.
Optionally, the first semiconductor layer includes a buffer layer, an etch stop layer, and a first confinement layer, which are stacked in sequence; the first limiting layer is in contact with the active layer, wherein the thickness of the buffer layer is 0.4-0.6um, the thickness of the corrosion stop layer is 2.0-4.0 μm, and the thickness of the first limiting layer is 0.3-0.6 um. The whole thickness of the first semiconductor is greatly reduced, the raw material cost for growing the first semiconductor is reduced, and the period for growing the micro light-emitting diode epitaxial structure is shortened.
Optionally, the second semiconductor layer comprises a second confinement layer and a current spreading layer, the second confinement layer being in contact with the active layer; the thickness of the current spreading layer is 0.5-1 um. And the movement of holes in the current spreading layer is reduced, so that the current spreading of the current spreading layer is poor, and light can be extracted under the condition of low current density.
Optionally, the thickness of the second confinement layer is 0.3-1 um.
Based on the same inventive concept, the present application further provides a method for manufacturing a micro light emitting diode epitaxial structure, comprising:
growing a first semiconductor layer on a substrate;
forming an active layer in the first semiconductor layer on a surface facing away from the substrate, the active layer comprising (Al) alternately stackedAGa1-A)0.5In0.5P well and (Al)BGa1-B)0.5In0.5P barrier of which (Al)AGa1-A)0.5In0.5The number of P well layers is N +1, (Al)BGa1-B)0.5In0.5The number of P base layers is N, B>A，2≤N≤4；
And growing a second semiconductor layer on the surface of the active layer far away from the first semiconductor layer.
Through N layer (Al)BGa1-B)0.5In0.5P barrier and N +1 layer (Al)AGa1-A)0.5In0.5The P well forms 3-5 pairs of quantum wells, the absorption of the active layer to red light wave bands can be reduced, the moving space of electron holes is reduced, the current expansion is reduced, when the epitaxial structure emits light, the light can be extracted at lower current density, and the light emitting efficiency of the epitaxial structure of the micro light emitting diode is improved.
Optionally, when the active layer is formed on the surface of the first semiconductor layer facing away from the substrate, the content of Ga and the content of Al are alternately controlled to alternately grow the (Al)BGa1-B)0.5In0.5P base and (Al)AGa1-A)0.5In0.5And the P trap, wherein A is more than or equal to 0.2 and less than or equal to 0.3, and B is more than or equal to 0.6 and less than or equal to 0.7. By controlling the values of A and B, the probability of electron and hole recombination in the quantum well can be increased, and the luminous efficiency of the micro light-emitting diode epitaxial structure is improved.
Optionally, before growing a first semiconductor layer on a substrate, purging the substrate through H2 to clean the surface of the substrate; and controlling the temperature of the environment where the substrate is located to remove moisture attached to the substrate. The manufacturing yield of the growing micro light-emitting diode chip is improved by removing impurities and water vapor on the substrate.
By controlling the growth thickness of the active layer, the active layer reduces the absorption of light wave bands, and the movement space of electron holes in the micro light-emitting diode epitaxial structure is reduced.
Optionally, the first semiconductor layer includes a second confinement layer and a current spreading layer; when a second semiconductor layer is grown and formed on the surface of the active layer far away from the first semiconductor layer:
and controlling the growth time of the current expansion layer to enable the thickness of the current expansion layer to be 0.5-1 um. Through the growth thickness of control current extension layer, reduce the removal of hole in the current extension layer for the current extension of current extension layer worsens, is favorable to light to be extracted under the lower circumstances of current density, has improved the luminous efficacy of little emitting diode chip epitaxial structure.
Based on the same inventive concept, the present application further provides a micro light emitting diode, which includes the micro light emitting diode epitaxial structure as described in any one of the above.
Through N layer (Al)BGa1-B)0.5In0.5P barrier and N +1 layer (Al)AGa1-A)0.5In0.5The P well forms 3-5 pairs of quantum wells, so that the absorption of the active layer to a red light wave band can be reduced, the moving space of electron holes is reduced, the current expansion is reduced, when the micro light-emitting diode emits light, the light is extracted at a lower current density, and the light-emitting efficiency of the micro light-emitting diode is improved.
Drawings
Fig. 1 is a schematic structural diagram of a micro light emitting diode epitaxial structure grown on a substrate according to an embodiment of the present disclosure;
FIG. 2 is a graph showing the relationship between the quantum extraction efficiency and the circuit density of a micro LED epitaxial structure;
fig. 3 is a flow chart illustrating a method for manufacturing a micro light emitting diode epitaxial structure according to an embodiment of the present disclosure.
Description of reference numerals:
10-a substrate;
20-a first semiconductor layer; 21-a buffer layer; 22-etch stop layer; 23-a first confinement layer;
30-an active layer; 31- (Al)AGa1-A)0.5In0.5A P well; 32- (Al)BGa1-B)0.5In0.5Base P;
40-a second semiconductor layer; 41-a second confinement layer; 42-current spreading layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The problem of the existing scheme explains that the high-brightness light-emitting diode is widely applied, and the high-brightness light-emitting diode is an electronic component which directly converts electric energy into light energy by generating photons through radiation recombination of conduction band electrons and valence band holes in a semiconductor material.
The micro light emitting diode chip comprises an active layer, wherein an AlGaInP barrier and an AlGaInP well are arranged in the active layer, the number of layers of the AlGaInP barrier and the AlGaInP well is large in the prior art, the AlGaInP barrier and the AlGaInP well form a quantum well, the active layer of the prior micro light emitting diode chip is provided with 25 pairs or even more pairs of quantum wells, the number of pairs of the quantum wells is increased, the active layer can absorb more light wave bands, the active layer is provided with more pairs of quantum wells, the moving space of electron holes in the active layer is large, light can be extracted only under high current density, and the light emitting efficiency of an epitaxial structure in the light emitting diode chip is low.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 1, a micro light emitting diode epitaxial structure is described in detail in the present application, wherein the micro light emitting diode epitaxial structure includes a first semiconductor layer 20, an active layer 30, and a second semiconductor layer 40; specifically, the active layer 30 is disposed on the first semiconductor layer 20, and the second semiconductor layer 40 is disposed on a surface of the active layer 30 away from the first semiconductor layer 20.
In the embodiments provided herein, the active layer 30 includes an N layer (Al)BGa1-B)0.5In0.5 P barrier 32 and N +1 layer (Al)AGa1-A)0.5In0.5P well 31 in the active layer 30 (Al)BGa1-B)0.5In0.5 P barrier 32 and (Al)AGa1-A)0.5In0.5The P wells 31 are alternately stacked, wherein N is more than or equal to 2 and less than or equal to 4; illustratively, in forming the active layer 30, a layer (Al) is first formed on the first semiconductor layer 20AGa1-A)0.5In0.5P well 31, then (Al)AGa1-A)0.5In0.5A layer of (Al) is formed in the P-well 31 on the surface away from the first semiconductor layer 20BGa1-B)0.5In0.5 P barrier 32, then (Al)BGa1-B)0.5In0.5A layer of (Al) is formed in the P barrier 32 on the surface remote from the first semiconductor layer 20AGa1-A)0.5In0.5P well 31, and so on, to finally form an N layer (Al)BGa1-B)0.5In0.5 P barrier 32 and N +1 layer (Al)AGa1-A)0.5In0.5A P-well 31.
In the examples provided in this application, (Al)BGa1-B)0.5In0.5 P barrier 32 and (Al)AGa1-A)0.5In0.5P-well 31 may form a quantum well, N (Al)BGa1-B)0.5In0.5 P barrier 32 and N +1 layer (Al)AGa1-A)0.5In0.5The P-well 31 forms N +1 pairs of quantum wells.
In the embodiment provided by the application, the value of N is between 2 and 4, the logarithm of the quantum well in the active layer 30 is between 3 and 5, and in the light emitting process of the micro light emitting diode epitaxial structure disclosed by the application, the active layer has small absorption to the light wave band because only 3 to 5 pairs of quantum wells are in the active layer 30, so that the light emitting efficiency of the micro light emitting diode epitaxial structure is improved.
In the embodiments provided herein, the active layer 30 has a thickness of 20-50nm, wherein each layer is made of the (Al)AGa1-A)0.5In0.5The thickness of the P well 31 is 4-5nm, and each layer of the (Al)BGa1-B)0.5In0.5The thickness of the P barrier 32 is 4-5nm, (Al)BGa1-B)0.5In0.5The number of P barrier 32 layers is 2-4, (Al)AGa1-A)0.5In0.5The number of the P wells 31 is 3-5, so that the total thickness of the active layer 30 is small, the moving space of electron holes in the active layer 30 is small, the current spreading is reduced, light can be extracted at a low current density, and the light emitting efficiency of the micro light emitting diode epitaxial structure is further improved.
In the examples provided in this application, the (Al) is described in each layerAGa1-A)0.5In0.5 P well 31 and the (Al)BGa1-B)0.5In0.5In the P base 32, when A is more than or equal to 0.2 and less than or equal to 0.3; and when B is more than or equal to 0.6 and less than or equal to 0.7, the probability of electron and hole recombination in the quantum well can be increased, and the luminous efficiency of the micro light-emitting diode epitaxial structure is improved.
The first semiconductor layer 20 includes a buffer layer 21 and an etch stop layer 2 stacked in sequence2 and a first confinement layer 23; the first confinement layer 23 is in contact with the active layer 30, and specifically, one of the first confinement layer 23 and the active layer 30 (Al)AGa1-A)0.5In0.5The P well 31 contact, wherein the Buffer layer 21 is GaAs Buffer, the Buffer layer 21 has a thickness of 0.4-0.6um, the etch stop layer 22 is GaInP, the etch stop layer 22 has a thickness of 2.0-4.0 μm, the first confinement layer 23 is P-AlInP, and the first confinement layer 23 has a thickness of 0.3-0.6 um.
In the embodiment provided by the present application, the total thickness of the first semiconductor layer 20 is controlled by controlling the thicknesses of the buffer layer 21, the etch stop layer 22 and the first limiting layer 23, so as to control the overall thickness of the micro light emitting diode epitaxial structure, and compared with the conventional light emitting diode chip, the thickness of the first semiconductor layer 20 in the micro light emitting diode epitaxial structure is greatly reduced, so that the raw material cost for generating the micro light emitting diode epitaxial structure is reduced, and the growth period for growing and forming the micro light emitting diode epitaxial structure is shortened.
The second semiconductor layer 40 includes a second confinement layer 41 and a current spreading layer 42, and the second confinement layer 42 is in contact with the active layer 30.
In the embodiment of the present application, the thickness of the current spreading layer 42 is 0.5-1 um; in the conventional light emitting diode epitaxial structure, the thickness of the current expansion layer is about 2um, and the thickness of the current expansion layer 42 in the micro light emitting diode epitaxial structure disclosed by the application is thinner, so that the movement of electron holes in the micro light emitting diode chip epitaxial structure is reduced, and the expansion of current in the current expansion layer 42 is reduced, so that when the micro light emitting diode epitaxial structure emits light, the light is extracted at a lower current density to provide the light emitting efficiency of the micro light emitting diode epitaxial structure, specifically referring to fig. 2, which is a relation curve diagram of the quantum extraction efficiency of the micro light emitting diode epitaxial structure and the circuit density; a is a relation curve between the Current Density (Current Density) of the Current spreading layer 42 provided by the present application and the quantum extraction efficiency, and b is the circuit Density of the conventional Current spreading layer 70 in the light emitting diode chip with the thickness of 21umDegree versus quantum extraction efficiency; when the circuit density is 0-10A/cm2When, the quantum extraction efficiency of the little emitting diode epitaxial structure that this application provided is higher, and the little emitting diode epitaxial structure that this application provided more is fit for using in miniature emitting diode.
The total thickness of the second semiconductor layer 40 is thin, wherein the thickness of the current spreading layer 42 is 0.5-1um, and the thickness of the second limiting layer 41 is 0.3-1um, so that the raw material cost of the second semiconductor layer 40 can be reduced, and the period of growing and forming the micro light-emitting diode epitaxial structure is reduced.
The application also discloses a micro light-emitting diode, the micro light-emitting diode epitaxial structure. The micro light emitting diode epitaxial structure comprises an N layer (Al)BGa1-B)0.5In0.5 P barrier 32 and N +1 layer (Al)AGa1-A)0.5In0.5The P-well 31 forms 3-5 pairs of quantum wells, which can reduce the absorption of the active layer 30 to the red light wave band, and reduce the moving space of electron holes to reduce the current expansion, so that light can be extracted at a lower current density when the micro light-emitting diode emits light, thereby improving the light-emitting efficiency of the micro light-emitting diode.
Referring to fig. 3, fig. 3 is a schematic flow chart of a method for manufacturing a micro light emitting diode epitaxial structure according to an embodiment of the present disclosure, where the method includes:
s1, the first semiconductor layers 20 are sequentially formed on the substrate 10.
In embodiments provided herein, the micro-led epitaxial structure is generated by Metal Organic Chemical Vapor Deposition (MOCVD).
Specifically, the substrate is placed in the MOCVD equipment, and the micro light emitting diode epitaxial structure is grown and formed on the substrate 10.
When the first semiconductor layer 20 is grown, the temperature in the reaction chamber of the MOCVD apparatus is maintained within a preset temperature range, specifically, the temperature in the reaction chamber of the MOCVD apparatus may be maintained at 650-.
S2, forming an active layer 30 on the surface of the first semiconductor layer 20 facing away from the substrate 10, wherein the active layer 30 comprises (Al) alternately stackedAGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5 P barrier 32 of (Al)AGa1-A)0.5In0.5The number of P wells 31 is N +1, (Al)BGa1-B)0.5In0.5The P barrier 32 has N, B layers>A，2≤N≤4；
In the embodiment provided in the present application, when the active layer 30 is formed, the temperature of the reaction chamber in the MOCVD equipment is controlled while the pressure in the reaction chamber is controlled, and simultaneously, the amount of Ga and Al introduced into the reaction chamber is controlled by the MOCVD equipment to form (Al)AGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5And the P barrier 32 is used for controlling the values of A and B by controlling the amount of Ga and Al which are introduced into the reaction cavity by the MOCVD equipment.
In a possible implementation manner, when the active layer 30 is formed on the first semiconductor layer 20 by growth, the temperature of the reaction chamber in the MOCVD apparatus may be controlled to be between 650 and 750 ℃, and the pressure in the reaction chamber is specifically 45-65mbar, it is understood that the temperature and the pressure of the reaction chamber in the MOCVD apparatus may also be set in other ranges when the first semiconductor layer 20 is grown in the reaction chamber in the MOCVD apparatus.
In the examples provided in this application, (Al)AGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5The number of the quantum wells formed by the P barrier 32 is 3-5 pairs, and the logarithm of the quantum wells disclosed in the embodiment of the application is far lower than that of the traditional quantum wells, so that when the micro light-emitting diode epitaxial structure emits light, the active layer 50 in the micro light-emitting diode epitaxial structure reduces the absorption of light wave bands, the moving space of electron holes in the active layer 30 is reduced, the current expansion in the active layer 30 is reduced, and the micro light-emitting diode epitaxial structure enables the micro light-emitting diode epitaxial structure to emit lightWhen the structure emits light, the light is extracted at a lower current density.
S3, growing a second semiconductor layer 40 in the active layer 30 away from the surface of the first semiconductor layer 20.
Specifically, when the second semiconductor layer 40 is grown, the temperature and the pressure of the reaction chamber in the MOCVD equipment are controlled, specifically, the temperature of the reaction chamber in the MOCVD equipment can be controlled to be 650-750 ℃, and the pressure in the reaction chamber can be controlled to be 45-65 mbar. It is understood that the temperature and pressure of the reaction chamber in the MOCVD tool can be controlled in other ranges to grow the second semiconductor layer 40.
In the examples provided in this application, the active layer is grown alternately in the reaction chamber of the MOCVD equipment (Al growth)AGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5 P barrier 32 for switching the (Al) by controlAGa1-A)0.5In0.5P-well 31 and growth (Al)BGa1-B)0.5In0.5The growth time of the P barrier 32 to control (Al)AGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5Thickness of P barrier 32, (Al)AGa1-A)0.5In0.5The thickness of the P-well 31 may be 4-5nm, (Al)BGa1-B)0.5In0.5The P barrier 32 may be 4-5nm and the overall thickness of the active layer 30 is 20-50 nm. Of course, AlAGa1-A)0.5In0.5P well 31 and (Al)BGa1-B)0.5In0.5The P barrier 32 may also be of other thicknesses, and the overall thickness of the active layer 30 may be in other thickness ranges.
When the active layer 30 grows in the reaction chamber of the MOCVD equipment, the values of A and B are controlled by controlling the contents of Ga and Al introduced into the reaction chamber of the MOCVD equipment, and the active layer is formed during growth (Al)AGa1-A)0.5In0.5When P trap 31 is used, A is more than or equal to 0.2 and less than or equal to 0.3; in the growth formation of (Al)BGa1-B)0.5In0.5When P barrier 32 is selected, B is 0.6-0.7, it is understood that A and B may be in other value ranges.
In the embodiment provided by the present application, the first semiconductor layer 20 includes a buffer layer 21, an etch stop layer 22, and a first confinement layer 23, which are sequentially stacked; the first confinement layer 22 is in contact with the active layer 30; growing a first semiconductor layer 20, and growing a buffer layer 21, an etch stop layer 22 and a first limiting layer 23 on the substrate 10 in sequence; the thicknesses of the buffer layer 21, the etch stop layer 22 and the first limiting layer 23 are respectively controlled by controlling the growth time of the buffer layer 21, the etch stop layer 22 and the first limiting layer 23, illustratively, the thickness of the buffer layer 21 is 0.4-0.6um, the thickness of the etch stop layer 22 is 2.0-4.0 μm, and the thickness of the first limiting layer 23 is 0.3-0.6um, so that the overall thickness of the first semiconductor layer 20 is thinner, the raw material for growing the first semiconductor layer 20 can be saved, and the growth period of the first semiconductor layer 20 can be shortened. It is understood that the thicknesses of the buffer layer 21, the etch stop layer 22, and the first confinement layer 23 can also be other thicknesses.
The second semiconductor layer 40 includes a second confinement layer 41 and a current spreading layer 42, the second confinement layer 41 being in contact with the active layer 30; when growing the second semiconductor layer, successively grow second restriction layer 41 and current extension layer 42 on the surface of keeping away from first semiconductor layer 20 in active layer 30, when growing second semiconductor layer 40, successively control the time of growing second restriction layer 41 and current extension layer 42, and then realize controlling the thickness of second restriction layer 41 and current extension layer 42, the thickness of current extension layer 42 is 0.5-1um, the thickness of second restriction layer 42 is 0.3-1 um.
In the embodiment provided by the present application, the thickness of the current spreading layer 42 is controlled to be 0.5-1um, and in the conventional light emitting diode epitaxial structure, the thickness of the current spreading layer 42 is about 2um, the thickness of the current spreading layer 42 in the micro light emitting diode epitaxial structure disclosed by the present application is thinner, which reduces the movement of electron holes in the micro light emitting diode chip epitaxial structure, and reduces the current in the current spreadingThe expansion of layer 42 allows light to be extracted at a lower current density when the micro led epitaxial structure is emitting light, thereby improving the light emitting efficiency of the micro led epitaxial structure. FIG. 2 is a graph showing the relationship between the quantum extraction efficiency and the circuit density of a micro LED epitaxial structure; a is a relation curve between the Current Density (Current Density) and the quantum extraction efficiency in the light emitting diode with the thickness of 1um of the Current spreading layer 42 provided by the application, and b is a relation curve between the Current Density and the quantum extraction efficiency in the light emitting diode chip with the thickness of 21um of the traditional Current spreading layer 70; when the circuit density is 0-10A/cm2When, the quantum extraction efficiency of the little emitting diode epitaxial structure that this application provided is higher, and the little emitting diode epitaxial structure that this application provided more is fit for using in miniature emitting diode.
In the embodiment provided in the present application, before the first semiconductor layer 20 is grown on the substrate 10, the substrate 10 is placed in a reaction chamber of an MOCVD apparatus, the substrate 10 is purged through H2 to clean the substrate 10 and remove impurities on the substrate 10, and meanwhile, moisture in the reaction chamber of the MOCVD apparatus is removed through high temperature treatment, and then the first semiconductor layer 20 is grown on the substrate 10.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (11)
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