CN114007320A - Method for improving electrostatic distribution on the backside of silicon wafer of lithography machine - Google Patents
Method for improving electrostatic distribution on the backside of silicon wafer of lithography machine Download PDFInfo
- Publication number
- CN114007320A CN114007320A CN202111344726.3A CN202111344726A CN114007320A CN 114007320 A CN114007320 A CN 114007320A CN 202111344726 A CN202111344726 A CN 202111344726A CN 114007320 A CN114007320 A CN 114007320A
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- China
- Prior art keywords
- silicon wafer
- alignment
- compressed air
- lithography machine
- static eliminator
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000001459 lithography Methods 0.000 title claims description 13
- 230000003068 static effect Effects 0.000 claims abstract description 26
- 238000001259 photo etching Methods 0.000 claims abstract description 22
- 238000007664 blowing Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 4
- 238000006386 neutralization reaction Methods 0.000 claims description 7
- 230000001960 triggered effect Effects 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/06—Carrying-off electrostatic charges by means of ionising radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a method for improving electrostatic distribution on the back of a silicon wafer of a photoetching machine, which comprises the following steps: step one, mounting a static eliminator on the side surface of a pre-alignment unit of a photoetching machine; blowing plasma wind to the surface of the silicon wafer through compressed air; and step three, during pre-alignment, the silicon wafer rotates, and positive and negative particles in the plasma wind uniformly neutralize the surface charge of the silicon wafer. The invention can slow down the abrasion of the exposure slide holder of the photoetching machine.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving electrostatic distribution on the back of a silicon wafer of a photoetching machine.
Background
The glue coating refers to a process for coating a photoresist on the surface of a chip in the manufacturing of integrated circuits and discrete devices, belongs to a photoetching procedure, and forms a most critical technological process with the most repeated times in the whole IC manufacturing process together with a developing and exposing system. The key process as the previous process of large scale integrated circuit production has an important influence on improving the product integration level and the yield.
When the silicon chip is coated by the coater, the back oxide layer rubs with the non-conductive liquid to generate static electricity. Because the nozzle is fixed in position, static electricity can build up at the fixed location, creating a particular distribution, as shown in fig. 1. When the silicon wafer is transferred to the photoetching machine, the abrasion of a wafer carrying platform of the photoetching machine is accelerated by static electricity on the back surface, so that pits appear at fixed positions, and finally the generated pits have influence on the focusing and alignment precision of the exposure of the photoetching machine.
Disclosure of Invention
In view of the above situation, the present invention provides a method for improving the electrostatic distribution on the back side of a silicon wafer of a lithography machine, in order to overcome the defects of the prior art.
The invention solves the technical problems through the following technical scheme: a method for improving electrostatic distribution on the back of a silicon wafer of a photoetching machine is characterized by comprising the following steps:
step one, mounting a static eliminator on the side surface of a pre-alignment unit of a photoetching machine;
blowing plasma wind to the surface of the silicon wafer through compressed air;
and step three, during pre-alignment, the silicon wafer rotates, and positive and negative particles in the plasma wind uniformly neutralize the surface charge of the silicon wafer.
Preferably, the pre-alignment unit of the lithography machine comprises a liftable temperature control platform, and when the silicon wafer is pre-aligned, the pre-alignment temperature control platform of the lithography machine can descend to expose the lower surface of the silicon wafer.
Preferably, the static eliminator comprises a plurality of nozzles, the nozzles are arranged on the side surface of the pre-alignment temperature control platform of the photoetching machine, the angle of the air outlet of the nozzles of the static eliminator is adjusted, and the nozzles are aligned to the lower surface of the silicon wafer.
Preferably, in the second step, compressed clean air with the temperature controlled inside the lithography machine is used as an air source, the compressed clean air is introduced into the static eliminator through an air pipe, at least one electromagnetic valve is used for controlling the compressed air, when the compressed air passes through the static eliminator, part of the compressed air is ionized by a high-voltage electrode inside, the compressed air forms plasma wind and is sprayed out from a nozzle, and charges on the lower surface of the silicon wafer are neutralized.
Preferably, the diameter of the air tube is six millimeters.
Preferably, a micro switch is arranged on the side surface of the temperature control platform to detect and adjust the state of the temperature control platform.
Preferably, when the pre-alignment unit of the photoetching machine performs pre-alignment, the temperature control platform descends, the micro switch is triggered to be closed, the electromagnetic valve is driven to be conducted, the compressed air forms plasma wind, the plasma wind blows to the lower surface of the silicon wafer, and the static neutralization process starts.
Preferably, after the pre-alignment is finished in the third step, the temperature control platform rises to be tightly attached to the silicon wafer, the micro switch is switched off, the electromagnetic valve is switched off, the plasma wind is switched off, and the static neutralization process is finished.
Preferably, the wafer is rotated about its center during the pre-alignment.
The positive progress effects of the invention are as follows: the invention can reduce the abrasion of the exposure slide holder of the photoetching machine, and the service life of the exposure slide holder is prolonged to more than 100 ten thousand from 50 ten thousand.
Drawings
FIG. 1 is a schematic view showing the distribution of the static electricity of a silicon wafer coated in the prior art along the diameter direction of the silicon wafer.
FIG. 2 is a schematic structural diagram of the method for improving electrostatic distribution on the back surface of a silicon wafer of a lithography machine according to the present invention.
FIG. 3 is a schematic view showing the distribution of the electrostatic charge of the coated silicon wafer along the diameter direction of the silicon wafer according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
As shown in FIG. 2, the method for improving the electrostatic distribution on the back surface of the silicon wafer of the lithography machine of the present invention comprises the following steps:
step one, mounting a static eliminator on the side surface of a pre-alignment unit of a photoetching machine; the pre-alignment unit of the photoetching machine comprises a liftable temperature control platform (TSU), and when the silicon wafer is pre-aligned, the pre-alignment temperature control platform of the photoetching machine can descend to expose the lower surface of the silicon wafer. The static eliminator comprises a plurality of nozzles, the nozzles are arranged on the side face of the pre-alignment temperature control platform of the photoetching machine, the angle of the air outlet of the nozzles of the static eliminator is adjusted, the nozzles are aligned to the lower surface of the silicon wafer, and subsequent air blowing and neutralization are facilitated.
Blowing plasma wind to the surface of the silicon wafer through compressed air; compressed clean air with the temperature controlled (22 ℃) in the photoetching machine is used as an air source, the air source is introduced into the static eliminator through an air pipe, at least one electromagnetic valve is used for controlling the compressed air, when the compressed air passes through the static eliminator, part of the compressed air can be ionized by an internal high-voltage electrode, the compressed air forms plasma wind and is sprayed out from a nozzle, and charges on the lower surface of a silicon wafer are neutralized. Wherein, the diameter of trachea is six millimeters, conveniently ventilates and follow-up compression.
And step three, during pre-alignment, the silicon wafer rotates, and positive and negative particles in the plasma wind uniformly neutralize the surface charge of the silicon wafer.
The side surface of the temperature control platform is provided with a microswitch for detecting and adjusting the state of the temperature control platform. When the pre-alignment unit of the photoetching machine performs pre-alignment, the temperature control platform descends, the micro switch is triggered to be closed, the electromagnetic valve is driven to be conducted, compressed air forms plasma wind, the plasma wind blows to the lower surface of the silicon wafer, and the static neutralization process starts. In order to find the gap of the silicon chip fixed position, the silicon chip can rotate around the center of the circle when the silicon chip is pre-aligned. Because the position of the air outlet of the nozzle of the static eliminator is fixed, the plasma air flow can be uniformly blown to the lower surface of the whole silicon wafer in the rotating process of the silicon wafer, and the whole pre-alignment process is carried out for three seconds. After the pre-alignment is finished, the temperature control platform rises to be tightly attached to the silicon wafer, the micro switch is switched off, the electromagnetic valve is switched off, the plasma wind is switched off, and the static neutralization process is finished. As shown in FIG. 3, the average voltage of the static electricity was reduced from 86.3V to 0.4V, and the voltage difference in the silicon wafer was reduced from 20V to 5V.
The above-mentioned embodiments are preferred embodiments of the present invention, and the present invention is not limited thereto, and any other modifications or equivalent substitutions that do not depart from the technical spirit of the present invention are included in the scope of the present invention.
Claims (9)
1. A method for improving electrostatic distribution on the back of a silicon wafer of a photoetching machine is characterized by comprising the following steps:
step one, mounting a static eliminator on the side surface of a pre-alignment unit of a photoetching machine;
blowing plasma wind to the surface of the silicon wafer through compressed air;
and step three, during pre-alignment, the silicon wafer rotates, and positive and negative particles in the plasma wind uniformly neutralize the surface charge of the silicon wafer.
2. The method according to claim 1, wherein the pre-alignment unit comprises a temperature-controlled stage capable of being lifted, and when the silicon wafer is pre-aligned, the temperature-controlled stage is lowered to expose the lower surface of the silicon wafer.
3. The method according to claim 2, wherein the static eliminator comprises a plurality of nozzles, the nozzles are mounted on the side of the pre-alignment temperature control platform of the lithography machine, and the angle of the outlet of the nozzles of the static eliminator is adjusted to be aligned with the lower surface of the silicon wafer.
4. The method according to claim 3, wherein in the second step, the temperature-controlled compressed clean air inside the lithography machine is used as a gas source, the air source is introduced into the static eliminator through a gas pipe, the compressed air is controlled by at least one solenoid valve, when the compressed air passes through the static eliminator, a part of the compressed air is ionized by an internal high-voltage electrode, and the compressed air forms plasma wind and is sprayed out of the nozzle to neutralize the charges on the lower surface of the silicon wafer.
5. The method for improving the electrostatic distribution on the back surface of a silicon wafer of a lithography machine according to claim 4, wherein the diameter of the gas pipe is six millimeters.
6. The method according to claim 5, wherein a micro-switch is disposed on a side of the thermal platform to detect and adjust the state of the thermal platform.
7. The method for improving the electrostatic distribution on the back surface of the silicon wafer of the lithography machine as claimed in claim 6, wherein when the pre-alignment unit of the lithography machine is pre-aligned, the temperature control platform descends, the micro switch is triggered to be closed, the electromagnetic valve is driven to be conducted, the compressed air forms plasma wind, the plasma wind blows to the lower surface of the silicon wafer, and the electrostatic neutralization process starts.
8. The method for improving the electrostatic distribution on the back surface of the silicon wafer of the lithography machine as claimed in claim 6, wherein in the third step, after the pre-alignment is finished, the temperature control platform rises to be tightly attached to the silicon wafer, the micro switch is turned off, the electromagnetic valve is turned off, the plasma wind is turned off, and the electrostatic neutralization process is finished.
9. The method according to claim 1, wherein the wafer is rotated about its center during the pre-alignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111344726.3A CN114007320A (en) | 2021-11-15 | 2021-11-15 | Method for improving electrostatic distribution on the backside of silicon wafer of lithography machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111344726.3A CN114007320A (en) | 2021-11-15 | 2021-11-15 | Method for improving electrostatic distribution on the backside of silicon wafer of lithography machine |
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|---|---|
| CN114007320A true CN114007320A (en) | 2022-02-01 |
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| CN202111344726.3A Pending CN114007320A (en) | 2021-11-15 | 2021-11-15 | Method for improving electrostatic distribution on the backside of silicon wafer of lithography machine |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1516890A (en) * | 2001-08-27 | 2004-07-28 | ���µ�����ҵ��ʽ���� | Plasma processing device and plasma processing method |
| CN103066002A (en) * | 2012-12-04 | 2013-04-24 | 赖守亮 | Chip substrate bearing device used for vacuum plasma technology |
| US20180308738A1 (en) * | 2017-04-25 | 2018-10-25 | Tokyo Electron Limited | Substrate processing apparatus and substrate removing method |
| CN112490166A (en) * | 2020-12-16 | 2021-03-12 | 上海图双精密装备有限公司 | Static electricity eliminating device of photoetching machine |
-
2021
- 2021-11-15 CN CN202111344726.3A patent/CN114007320A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1516890A (en) * | 2001-08-27 | 2004-07-28 | ���µ�����ҵ��ʽ���� | Plasma processing device and plasma processing method |
| CN103066002A (en) * | 2012-12-04 | 2013-04-24 | 赖守亮 | Chip substrate bearing device used for vacuum plasma technology |
| US20180308738A1 (en) * | 2017-04-25 | 2018-10-25 | Tokyo Electron Limited | Substrate processing apparatus and substrate removing method |
| CN112490166A (en) * | 2020-12-16 | 2021-03-12 | 上海图双精密装备有限公司 | Static electricity eliminating device of photoetching machine |
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