CN114000202A - Crystalline Silicon Solar Cell Variable Temperature Diffusion Furnace - Google Patents
Crystalline Silicon Solar Cell Variable Temperature Diffusion Furnace Download PDFInfo
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- CN114000202A CN114000202A CN202111165033.8A CN202111165033A CN114000202A CN 114000202 A CN114000202 A CN 114000202A CN 202111165033 A CN202111165033 A CN 202111165033A CN 114000202 A CN114000202 A CN 114000202A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 41
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims description 10
- 239000010425 asbestos Substances 0.000 claims description 7
- 229910052895 riebeckite Inorganic materials 0.000 claims description 7
- 239000005341 toughened glass Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 7
- 230000007246 mechanism Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000036541 health Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Furnace Details (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
Abstract
本发明公开了一种晶硅太阳能电池变温扩散炉，涉及扩散炉技术领域。该晶硅太阳能电池变温扩散炉包括炉体，炉体上开设有炉口，炉口一侧的炉体上铰接设有用于封闭炉口的炉门，炉口呈圆形状设置，炉门上设有封闭件、辅助隔离件和锁紧件，封闭件包括形成于炉门上的固定环，固定环外滑移连接有形状与炉口相同的封闭环，用于在炉门封闭时滑移卡接在炉口外并封闭炉口，本发明能够在关闭扩散炉的炉门时，通过联动件带动封闭机构同步对其炉口进行封闭，一方面增加对炉口封闭时的隔热性，避免发生热量逸散，保证炉体内温度快速增长并维持平衡，另一方面能够提升炉口位置的气密性，从而防止炉体内经过高温后硅片或其他元件产生的有害气体泄露。
The invention discloses a temperature-variable diffusion furnace for crystalline silicon solar cells, which relates to the technical field of diffusion furnaces. The crystalline silicon solar cell temperature-variable diffusion furnace includes a furnace body, a furnace mouth is opened on the furnace body, a furnace door for sealing the furnace mouth is hinged on the furnace body on one side of the furnace mouth, the furnace mouth is arranged in a circular shape, and the furnace door is provided with a furnace door. There are closing parts, auxiliary isolation parts and locking parts. The closing parts include a fixing ring formed on the furnace door. A closing ring with the same shape as the furnace mouth is slidably connected to the outside of the fixing ring, which is used to slide the card when the furnace door is closed. It is connected to the outside of the furnace mouth and closes the furnace mouth. When closing the furnace door of the diffusion furnace, the invention can drive the closing mechanism to seal the furnace mouth synchronously through the linkage. The heat escapes to ensure that the temperature in the furnace increases rapidly and maintains a balance. On the other hand, it can improve the air tightness of the furnace mouth, thereby preventing the leakage of harmful gases generated by silicon wafers or other components in the furnace after high temperature.
Description
Technical Field
The invention relates to the technical field of diffusion furnaces, in particular to a crystalline silicon solar cell variable-temperature diffusion furnace.
Background
The diffusion furnace is one of important process equipment of a front process of a semiconductor production line, and is used for diffusion, oxidation, annealing, alloying, sintering and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, photoelectric devices, optical fibers and the like. Its main purpose is to dope the semiconductor, i.e. to diffuse the doping material into the silicon wafer at high temperature, thereby changing and controlling the type, concentration and distribution of impurities in the semiconductor in order to create regions of different electrical properties.
Although some processes may use ion implantation for doping, thermal diffusion is still the most dominant, and prevalent method of doping. The thermal oxidation of silicon is to react the surface of a silicon wafer with an oxidizing agent at a high temperature to grow a silicon dioxide film. The oxidation method comprises dry oxygen oxidation and water vapor oxidation (hydrogen-containing oxygen synthesis), and the diffusion furnace is necessary equipment for preparing an oxide layer by using the two oxidation methods. The diffusion furnace is the basic equipment of the semiconductor integrated circuit process, and is interdependent, and co-developed with the semiconductor process.
The diffusion furnace is of two types, namely a vertical diffusion furnace and a horizontal diffusion furnace. The vertical diffusion furnace is characterized in that the quartz boat is vertical to the horizontal plane, so that the transmission of the silicon wafer by the mechanical arm is facilitated, and the consistency of the in-chip process parameters is better. The horizontal diffusion furnace is characterized in that the quartz boat is parallel to the horizontal plane, one process furnace tube can be 4 or more than 4, the average furnace tube occupies smaller area, and the process parameters among the plates are better than those of the vertical diffusion furnace.
At present, chinese patent publication No. CN107604444A discloses a silicon wafer heating diffusion furnace, which comprises a furnace body and a plurality of furnace tubes arranged in the furnace body, wherein a control cabinet is arranged on the furnace body, the furnace tubes are transversely arranged in the furnace body at intervals, two ends of the furnace tubes are arranged as a furnace opening and a furnace tail, and furnace doors are arranged on the furnace opening and the furnace tail on the furnace body. Heating elements are respectively arranged at the furnace mouth, the furnace tail and the middle part of the furnace tube, a quartz layer is arranged in the furnace tube, an asbestos pad and an asbestos ring are respectively sleeved on the outer surfaces of the furnace mouth and the furnace tail of the furnace tube, and a control cabinet monitors and controls the temperature in the furnace body in real time.
Although the silicon wafer heating diffusion furnace can achieve the effect of preserving heat of the furnace mouth and the furnace tail and prevent the furnace mouth from being caused by heat dissipation, when the diffusion furnace is used, the furnace mouth is not well sealed due to the existence of the furnace door, heat dissipation is easily caused in the production process, and meanwhile, due to the high-temperature condition, the silicon wafer easily generates harmful gas and leaks from the position of the furnace door, so that certain damage is caused to the health of operators.
Disclosure of Invention
Aiming at the technical problems, the invention overcomes the defects of the prior art and provides a crystalline silicon solar cell variable-temperature diffusion furnace.
In order to solve the technical problems, the invention provides a crystalline silicon solar cell variable-temperature diffusion furnace.
The technical effects are as follows: can be when closing the furnace gate of diffusion furnace, drive closing mechanism through the linkage and seal its fire door in step, increase the heat-proof quality when sealing to the fire door on the one hand, avoid taking place the heat loss, guarantee that the internal temperature of furnace increases fast and maintains balance, on the other hand can promote the gas tightness of fire door position to prevent that the harmful gas that produces through silicon chip or other components behind the high temperature in the furnace body from revealing, in order to guarantee that operating personnel's is healthy.
The technical scheme of the invention is further defined as follows: a crystalline silicon solar cell variable-temperature diffusion furnace comprises a furnace body, wherein a furnace opening is formed in the furnace body, a furnace door used for sealing the furnace opening is hinged to the furnace body on one side of the furnace opening and is arranged in a circular shape, and a furnace door is arranged on the furnace door
The closed piece comprises a fixed ring formed on the furnace door, the fixed ring is connected with a closed ring which has the same shape as the furnace opening in a sliding manner and is used for being clamped outside the furnace opening in a sliding manner and closing the furnace opening when the furnace door is closed, the furnace opening is provided with a connecting ring which has the shape matched with that of the fixed ring, the fixed ring is embedded in the connecting ring when the furnace door is closed, and the closed ring is sleeved outside the connecting ring;
the auxiliary isolating piece comprises two isolating blocks which are symmetrically arranged about the fixing ring and connected to the furnace door in a sliding manner, the isolating blocks are arranged in a semi-annular manner and are attached to the closed ring in shape, and the furnace door is provided with a linkage piece which comprises a rotating wheel and is used for driving the two isolating blocks to slide in opposite or opposite directions in a rotating manner so as to assist in isolating or releasing the closed ring;
the retaining member, including fixing the caulking groove on the furnace body and sliding the connecting block of connection on the furnace gate, the connecting block passes through the trace and is connected with the linkage, drives the connecting block through the trace when the runner is rotatory and inlays and locate in the caulking groove or pull out the caulking groove to realize the locking of furnace gate.
Further, be equipped with the holding tank that is used for holding the furnace gate on the furnace body, the fire door is located the holding tank intermediate position, and the closure piece includes the movable rod, and the movable rod intermediate position articulates on the furnace gate, and movable rod one end articulates in the closed ring side, passes through fixed spring to be connected between the other end and the furnace gate, corresponds the movable rod end in the holding tank and is equipped with the briquetting.
The crystalline silicon solar cell variable temperature diffusion furnace is characterized in that the bottom of the fixing ring is provided with the limiting convex ring, the tail end of the sealing ring is provided with the inner convex ring, the inner convex ring slides between the furnace door and the limiting convex ring, the top surface of the inner convex ring is mutually attached to the limiting convex ring when the furnace door is sealed, the sealing ring is integrally made of toughened glass materials and comprises two layers, and the middle position of the sealing ring is provided with the vacuum heat insulation layer.
The crystal silicon solar cell variable-temperature diffusion furnace is characterized in that the caulking groove is formed in the top and the bottom of the inner side surface of the accommodating groove, the furnace door is connected with a movable block in a sliding mode, the movable block and the connecting block are fixed through a linkage rod, a driving gear is arranged in the furnace door, and a movable rack meshed with the driving gear is arranged on one side of the movable block and used for driving the movable block and the linkage rod to slide.
The crystal silicon solar cell variable-temperature diffusion furnace is characterized in that the rotating wheel is rotatably connected to the furnace door through the rotating shaft, the rotating shaft penetrates through the furnace door, the driving gear is coaxially fixed to the rotating shaft, the auxiliary isolating piece comprises a driving block, the driving block is connected to the furnace door in a sliding mode, and the tail end of the driving block is fixed to the isolating block through the driving rod.
The crystalline silicon solar cell variable temperature diffusion furnace is characterized in that a driving rack is integrally formed on a driving block, the driving rack is meshed with a driving gear and used for driving the driving block to slide, the driving rack and a movable rack are staggered with each other, the driving block is located on the upper side and the lower side of the driving gear, and the movable block is located on the left side and the right side of the driving gear.
The crystal silicon solar cell variable-temperature diffusion furnace is characterized in that an asbestos pad attached to a closed ring is arranged in an isolation block, the furnace door comprises an inner layer and an outer layer, the inner layer and the outer layer are arranged in a vacuum mode, and windows formed by toughened glass are correspondingly arranged on the furnace door and the furnace body and used for observing working conditions in the furnace body.
The invention has the beneficial effects that:
(1) according to the invention, when the furnace door is closed, an operator firstly closes the furnace door to the accommodating groove, at the moment, the fixing ring is matched with the connecting ring, the fixing ring is embedded in the connecting ring, the furnace door is continuously closed, the tail end of the movable rod is outwards ejected out through the pressing blocks on two sides, the middle of the movable rod is hinged on the furnace door, the other end of the movable rod can drive the closing ring to slide on the fixing ring, so that the closing ring is sleeved outside the connecting ring to form a closed state, the sealing performance of the whole furnace door can be improved due to the vacuum arrangement in the middle of the closing ring, and the auxiliary isolating piece can realize the combination of two isolating blocks outside the closing ring when the furnace door is closed, so that the whole closing ring is contained, the heat insulation performance and the air tightness of the furnace door are further improved, and finally, the whole furnace door can be locked in the accommodating groove by matching with the locking piece, so that the furnace door is firmly closed;
(2) according to the invention, the bottom of the fixing ring is provided with the limiting convex ring, and the tail end of the closed ring forms the inner convex ring, so that when the closed ring is clamped outside the connecting ring, the top surface of the inner convex ring can be abutted against the closed convex ring, thereby improving the whole sealing property, the closed ring made of toughened glass material has good air tightness, and the arrangement of the vacuum heat insulation layer can also enable the whole sealing ring to have good heat insulation property, thereby ensuring that the temperature of the whole furnace mouth does not escape, and simultaneously, the gas in the furnace body is not easy to leak;
(3) in the invention, after the furnace door is closed, an operator can drive the internal driving gear to rotate by rotating the rotating wheel, and the left side and the right side of the driving gear are meshed with the movable rack to drive the movable rack to slide up and down, so that the movable block and the linkage rod are linked to drive the connecting block at the tail end of the linkage rod to slide, so that the connecting block is embedded in the caulking groove or pulled out of the caulking groove, the effect of locking the whole furnace door is achieved, and the driving racks on the upper side and the lower side of the gear can be driven to slide by the driving gear to realize the pulling of the isolating block;
(4) according to the invention, the driving rack can drive the two isolating blocks to be mutually attached or separated, the attachment to the outside of the closed ring can be completed when needed, an operator can lock the furnace door and drive the isolating blocks only by rotating the rotating wheel, the whole structure is convenient, and in addition, the isolating blocks are internally provided with the asbestos pads attached to the closed ring, so that the heat insulation and air tightness of the closed ring can be assisted and improved, and a better sealing effect is achieved;
(5) according to the invention, when the furnace door of the diffusion furnace is closed, the linkage piece drives the closing mechanism to synchronously close the furnace opening, so that on one hand, the heat insulation property is increased when the furnace opening is closed, the heat dissipation is avoided, the rapid temperature increase and balance maintenance in the furnace body are ensured, and on the other hand, the air tightness of the furnace opening position can be improved, thereby preventing harmful gas generated by a silicon chip or other elements in the furnace body after high temperature from leaking, and ensuring the health of operators.
Drawings
FIG. 1 is a structural view of example 1;
FIG. 2 is a schematic connection diagram of embodiment 1;
FIG. 3 is a view showing the construction of a seal ring and a retainer ring in embodiment 1;
FIG. 4 is a schematic view showing the connection of the sealing ring in example 1;
fig. 5 is a structural view of an auxiliary spacer in embodiment 1.
Wherein: 1. a furnace body; 11. a furnace mouth; 12. a furnace door; 121. an inner layer; 122. an outer layer; 123. a window; 13. accommodating grooves; 2. a closure; 21. a fixing ring; 211. a limit convex ring; 22. a closed ring; 221. an inner collar; 23. a connecting ring; 24. a movable rod; 25. briquetting; 3. an auxiliary spacer; 31. an isolation block; 311. an asbestos pad; 32. a drive block; 33. a drive rod; 34. a drive rack; 4. a locking member; 41. caulking grooves; 42. connecting blocks; 43. a movable block; 44. a linkage rod; 45. a movable rack; 5. a linkage member; 51. a rotating wheel; 52. a rotating shaft; 53. a drive gear.
Detailed Description
The temperature-changing diffusion furnace of the crystalline silicon solar cell provided by the embodiment has a structure shown in fig. 1-3, and comprises a furnace body 1, wherein a furnace opening 11 is formed in the furnace body 1, a furnace door 12 for closing the furnace opening 11 is hinged to the furnace body 1 on one side of the furnace opening 11, the furnace opening 11 is arranged in a circular shape, and a closing member 2, an auxiliary isolating member 3 and a locking member 4 are arranged on the furnace door 12.
As shown in fig. 2-4, the closing member 2 includes a fixing ring 21 formed on the furnace door 12, the fixing ring 21 is slidably connected to a closing ring 22 having the same shape as the furnace opening 11, and is used for slidably clamping outside the furnace opening 11 and closing the furnace opening 11 when the furnace door 12 is closed, the furnace opening 11 is provided with a connecting ring 23 having a shape matching the fixing ring 21, the fixing ring 21 is embedded in the connecting ring 23 when the furnace door 12 is closed, and the closing ring 22 is sleeved outside the connecting ring 23.
As shown in fig. 3-5, the furnace body 1 is provided with an accommodating groove 13 for accommodating the furnace door 12, the furnace mouth 11 is located at the middle position of the accommodating groove 13, the closing member 2 comprises a movable rod 24, the middle position of the movable rod 24 is hinged on the furnace door 12, one end of the movable rod 24 is hinged on the side surface of the closing ring 22, the other end of the movable rod 24 is connected with the furnace door 12 through a fixed spring, and a pressing block 25 is arranged in the accommodating groove 13 corresponding to the end of the movable rod 24.
As shown in fig. 3-5, the bottom of the fixing ring 21 is provided with a limit convex ring 211, the end of the sealing ring 22 is provided with an inner convex ring 221, the inner convex ring 221 slides between the oven door 12 and the limit convex ring 211, the top surface of the inner convex ring 221 is attached to the limit convex ring 211 when the oven door 12 is sealed, the sealing ring 22 is integrally made of toughened glass material and comprises two layers, and a vacuum heat insulation layer is arranged in the middle. The isolation block 31 is internally provided with an asbestos pad 311 attached to the closed ring 22, the furnace door 12 comprises an inner layer 121 and an outer layer 122, the inner layer 121 and the outer layer 122 are arranged in a vacuum manner, and the furnace door 12 and the furnace body 1 are correspondingly provided with a window 123 formed by toughened glass and used for observing the working condition in the furnace body 1.
As shown in fig. 3-5, the auxiliary isolation member 3 includes two isolation blocks 31 symmetrically disposed about the fixing ring 21 and slidably connected to the oven door 12, the isolation blocks 31 are disposed in a semi-ring shape and fit to the sealing ring 22, and the oven door 12 is provided with a linkage member 5 including a rotating wheel 51 for driving the two isolation blocks 31 to slide in opposite or opposite directions in a rotating manner to assist in isolating or releasing the sealing ring 22.
As shown in fig. 3-5, a locking member 4 is further provided, which includes an insertion groove 41 fixed on the furnace body 1 and a connecting block 42 slidably connected to the furnace door 12, the connecting block 42 is connected to the linkage member 5 through a linkage rod 44, and when the rotating wheel 51 rotates, the connecting block 42 is driven by the linkage rod 44 to be inserted into the insertion groove 41 or pulled out of the insertion groove 41, so as to lock the furnace door 12.
As shown in fig. 3-5, the caulking groove 41 is disposed at the top and bottom of the inner side of the accommodating groove 13, the oven door 12 is slidably connected with a movable block 43, the movable block 43 is fixed with the connecting block 42 through a coupling rod 44, a driving gear 53 is disposed in the oven door 12, and a movable rack 45 engaged with the driving gear 53 is disposed on one side of the movable block 43 for driving the movable block 43 and the coupling rod 44 to slide. The rotating wheel 51 is rotatably connected to the oven door 12 through a rotating shaft 52, the rotating shaft 52 penetrates through the oven door 12, the driving gear 53 is coaxially fixed on the rotating shaft 52, the auxiliary isolation member 3 comprises a driving block 32, the driving block 32 is connected to the oven door 12 in a sliding manner, and the tail end of the driving block 32 is fixed with the isolation block 31 through a driving rod 33.
As shown in fig. 3-5, a driving rack 34 is integrally formed on the driving block 32, the driving rack 34 is engaged with the driving gear 53 for driving the driving block 32 to slide, the driving rack 34 is staggered with the movable rack 45, the driving block 32 is located at the upper and lower sides of the driving gear 53, and the movable block 43 is located at the left and right sides of the driving gear 53.
When the furnace door 12 is closed, an operator firstly closes the furnace door 12 to the accommodating groove 13, at the moment, the fixed ring 21 is matched with the connecting ring 23, the fixed ring 21 is embedded in the connecting ring 23, the furnace door 12 is continuously closed, the tail end of the movable rod 24 is outwards ejected through the pressing blocks 25 at two sides, the middle of the movable rod 24 is hinged on the furnace door 12, the other end of the movable rod 24 can drive the closed ring 22 to slide on the fixed ring 21, so that the closed ring 22 is sleeved on the connecting ring 23 to form a closed shape, the sealing performance of the whole furnace door 12 can be improved due to the vacuum arrangement in the middle of the closed ring 22, the auxiliary isolating piece 3 can realize the combination of two isolating blocks 31 outside the closed ring 22 when the furnace door 12 is closed, the whole closed ring 22 is contained in the accommodating groove, the heat insulation performance and the air tightness of the furnace door 12 are further improved, and finally, the locking piece 4 is matched to lock the whole furnace door 12 in the accommodating groove 13, thereby achieving a secure closure of the oven door 12.
According to the invention, when the furnace door 12 of the diffusion furnace is closed, the linkage piece 5 drives the sealing mechanism to synchronously seal the furnace opening 11, so that on one hand, the heat insulation property is increased when the furnace opening 11 is sealed, the heat dissipation is avoided, the rapid temperature increase and balance maintenance in the furnace body 1 are ensured, and on the other hand, the air tightness of the position of the furnace opening 11 can be improved, thereby preventing harmful gas generated by a silicon chip or other elements after high temperature in the furnace body 1 from leaking, and ensuring the health of operators.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165033.8A CN114000202B (en) | 2021-09-30 | 2021-09-30 | Crystalline silicon solar cell variable temperature diffusion furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165033.8A CN114000202B (en) | 2021-09-30 | 2021-09-30 | Crystalline silicon solar cell variable temperature diffusion furnace |
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| Publication Number | Publication Date |
|---|---|
| CN114000202A true CN114000202A (en) | 2022-02-01 |
| CN114000202B CN114000202B (en) | 2023-06-02 |
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| CN202111165033.8A Active CN114000202B (en) | 2021-09-30 | 2021-09-30 | Crystalline silicon solar cell variable temperature diffusion furnace |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB191121195A (en) * | 1911-09-26 | 1912-10-28 | Edwin Ramsbottom | Improvements in Furnaces for Steam Boilers. |
| FR2451004A1 (en) * | 1979-03-09 | 1980-10-03 | Pruines Iseco Sa De | Metal door for microwave oven - is manoeuvred in closing position by electric motor and lever system |
| CN203432348U (en) * | 2013-07-11 | 2014-02-12 | 上海大学 | Automatic furnace door sealing device for diffusion furnace |
| US20200333017A1 (en) * | 2019-04-17 | 2020-10-22 | Qiuna Liu | Stove |
-
2021
- 2021-09-30 CN CN202111165033.8A patent/CN114000202B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB191121195A (en) * | 1911-09-26 | 1912-10-28 | Edwin Ramsbottom | Improvements in Furnaces for Steam Boilers. |
| FR2451004A1 (en) * | 1979-03-09 | 1980-10-03 | Pruines Iseco Sa De | Metal door for microwave oven - is manoeuvred in closing position by electric motor and lever system |
| CN203432348U (en) * | 2013-07-11 | 2014-02-12 | 上海大学 | Automatic furnace door sealing device for diffusion furnace |
| US20200333017A1 (en) * | 2019-04-17 | 2020-10-22 | Qiuna Liu | Stove |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114000202B (en) | 2023-06-02 |
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