CN113921680B - bulk transfer method - Google Patents

Abstract

The invention relates to a huge transfer method, which is not limited by the distance between LED chips on a substrate, and utilizes the strong hydrogen donating ability (anion polyelectrolyte) of hydroxyl groups in phenolic hydroxyl polymers and the electron donating ability (cation polyelectrolyte) of azide groups in azide polymers to make the phenolic hydroxyl polymers and the azide polymers mutually attracted, so that the LED chips with phenolic hydroxyl polymer film layers are self-assembled on the surfaces of the azide polymer film layers in a targeted manner, the phenolic hydroxyl polymer film layers and the azide polymer film layers form an assembled film layer based on hydrogen bonds, and then the phenolic hydroxyl polymers and the azide polymers are subjected to azide reaction to form covalent bonds through ultraviolet irradiation, so that the LED chips can be quickly and accurately transferred to corresponding pixels of the substrate, and the transfer efficiency and the transfer precision are improved.

Description

bulk transfer method

technical field

The invention relates to the field of display technology, in particular to a mass transfer method.

Background technique

The mass transfer of Micro LEDs (micro light-emitting diodes) requires precise grasping of micron-sized Micro-LED chips from the donor wafer, expanding the array distance, and properly placing and fixing them on the target substrate (such as the display backplane). With the existing mainstream LED die-bonding speed, it often takes dozens of days to mount a TV screen, which is far from meeting the requirements of industrialization.

For the process of precisely peeling off from the donor wafer, expanding the distance of the wafer array and transferring the wafer, the current mainstream solutions include:

1. Laser peeling and laser heating release technology. To meet the requirements of the target substrate for the placement distance of the Micro-LED chip, the laser selectively irradiates the micro-LED chip transfer substrate with a certain distance from the wafer, so that the wafer is peeled off/released and falls on the target substrate to achieve expansion. Chip array distance to target. This solution can realize the distance expansion and transfer placement of multiple Micro-LED chips without moving the Micro-LED chip transfer substrate. However, the premise of this solution is that the distance between two adjacent wafers on the target substrate must be an integer multiple of the distance between the two wafers on the Micro-LED chip transfer substrate, otherwise multiple Micro-LED chips cannot be aligned at the same time;

2. Stretch the elastic film to expand the distance of the chip array. First transfer the Micro-LED chip to the elastic film, stretch the elastic film to make the elastic film stretch evenly, and at the same time, the distance between the wafers on it is also stretched uniformly, and then transfer to the target substrate. This solution can realize the crystal expansion and transfer placement of a large number of wafers at the same time. However, this solution has high requirements on the uniformity of the elastic film, otherwise the distance between the wafers after crystal expansion cannot meet the requirements of the target substrate.

Contents of the invention

The purpose of the present invention is to provide a mass transfer method to solve the problem that the existing mass transfer method is limited by the distance between Micro-LED chips on the substrate.

Specifically, the technical solution adopted in the present invention is:

A mass transfer method comprising:

provide the substrate;

forming a plurality of LED chips on the surface of the substrate;

Forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;

separating a plurality of said LED chips from the substrate;

Provide the substrate;

forming a barrier layer on the surface of the substrate;

forming a plurality of through holes exposing at least part of the surface of the substrate on the surface of the barrier layer;

forming an azide polymer film layer within at least part of the through hole;

transferring the LED chips to the substrate;

The LED chip is assembled with the azide polymer film layer through the phenolic hydroxyl polymer film layer;

The ultraviolet light makes the phenolic hydroxyl polymer film layer and the azide polymer film layer form a covalent bond.

In order to achieve the above object, the present invention also provides another mass transfer method, including:

provide the substrate;

forming a plurality of LED chips on the surface of the substrate;

Forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;

separating a plurality of said LED chips from the substrate;

Provide the substrate;

forming an azide polymer film layer on the surface of the substrate;

forming a barrier layer on the surface of the azide polymer film layer;

forming at least one through hole exposing at least part of the surface of the azide polymer film layer on the surface of the barrier layer;

transferring the LED chips to the substrate;

The LED chip is assembled through the phenolic hydroxyl polymer film layer and the azide polymer film layer exposed to the through hole;

The ultraviolet light makes the phenolic hydroxyl polymer film layer and the azide polymer film layer form a covalent bond.

Optionally, the step of forming a covalent bond between the phenolic hydroxyl polymer film layer and the azide polymer film layer by ultraviolet light further includes peeling off the barrier layer with a stripping solution.

Optionally, the phenolic hydroxyl polymer forming the phenolic hydroxyl polymer film layer includes but not limited to polyaniline, phenolic resin, calixarene compounds and 4-hydroxyphenylporphyrin.

Optionally, the azide polymer forming the azide polymer film layer includes but not limited to diazo resin and its derivatives.

Optionally, the step of transferring the LED chip to the substrate further includes placing the substrate and the LED chip in water or a polar solution to stir and mix.

Optionally, the step of separating the plurality of LED chips from the substrate includes: separating the plurality of LED chips from the substrate by laser lift-off technology.

Optionally, the azide polymer film layer is formed on the surface of the substrate by inkjet printing, the arrangement of the through holes corresponds to the arrangement of the pixel units on the substrate, exposing the azide The pixel color of the pixel unit corresponding to the through hole of the polymer film layer corresponds to the color of the LED chip, and the colors of the plurality of LED chips formed on the surface of the substrate are the same.

Optionally, the barrier layer is a photoresist layer, and the step of forming the through hole on the surface of the barrier layer includes: exposing, developing and baking the barrier layer to form the through hole.

Optionally, the step of forming a plurality of LED chips on the surface of the substrate further includes sequentially growing epitaxially on the surface of the substrate to form a buffer layer, an unintentionally doped layer, and an LED epitaxial structure, and the LED epitaxial structure includes The N-type conductive layer, the light-emitting layer, the P-type conductive layer, the transparent conductive layer and the contact layer formed on the surface of the unintentionally doped layer are epitaxially grown in sequence, and the contact layer includes the P-electrode metal formed on the transparent conductive layer layer and a contact electrode formed on the surface of the light emitting layer.

The beneficial effect of the present invention is that the mass transfer method provided by the present invention is not limited by the spacing between LED chips on the substrate, and utilizes the strong hydrogen-donating ability (anionic polyelectrolyte) and azide of the hydroxyl group in the phenolic hydroxyl polymer The electron-donating ability of the azide group in the polymer (cationic polyelectrolyte) makes the phenolic hydroxyl polymer and the azide polymer attract each other, so that the LED chip with the phenolic hydroxyl polymer film layer is targeted for self-assembly in the azide polymerization On the surface of the film layer, the phenolic hydroxyl polymer film layer and the azide polymer film layer form an assembled film layer based on hydrogen bonds, and then the phenolic hydroxyl polymer and the azide polymer undergo an azidation reaction to form a covalent bond by ultraviolet light. , forming a covalent bond, so that the LED chip can be quickly and accurately transferred to the corresponding pixel on the substrate, and the transfer efficiency and transfer accuracy are improved.

Description of drawings

The technical solutions and other beneficial effects of the present invention will be apparent through the detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings.

FIG. 1 is a schematic flowchart of a mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2a is a schematic structural view of a substrate and an LED chip in a mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2b is a schematic structural diagram of a substrate and a single LED chip in a mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2c is a schematic structural view of forming a phenolic hydroxyl polymer film layer on the surface of multiple LED chips in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2d is a schematic structural view of peeling off a plurality of LED chips from the substrate surface in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2e is a schematic structural view of forming a barrier layer on the substrate surface in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2f is a schematic structural view of forming via holes on the surface of the barrier layer in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2g is a schematic structural view of forming an azide polymer film layer in a through hole in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2h is a schematic structural diagram of transferring monochromatic LED chips to a substrate in a mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 2i is a schematic diagram of the structure of ultraviolet light in the mass transfer method provided by an exemplary embodiment of the present invention;

3 is a schematic diagram of the combined structure of LED chips and substrates in the mass transfer method provided by an exemplary embodiment of the present invention;

Fig. 4 is a mass transfer method provided by another exemplary embodiment of the present invention

Fig. 5a is a schematic structural view of forming an azide polymer film layer on the surface of a substrate in the mass transfer method provided by another exemplary embodiment of the present invention;

Fig. 5b is a schematic structural view of forming a barrier layer on the surface of an azide polymer film layer in the mass transfer method provided by another exemplary embodiment of the present invention;

Fig. 5c is a schematic structural diagram of forming via holes on the surface of the barrier layer in the mass transfer method provided by another exemplary embodiment of the present invention;

Fig. 5d is a structural schematic diagram of transferring a single-color LED chip to a substrate in a mass transfer method provided by another exemplary embodiment of the present invention;

Fig. 5e is a schematic structural diagram of ultraviolet light irradiation in the mass transfer method provided by another exemplary embodiment of the present invention;

6 is a schematic structural view of the substrate and the LED chip after peeling off the barrier layer in the mass transfer method provided by another exemplary embodiment of the present invention;

The part numbers in the figure are as follows:

100, substrate;

200. LED chip, 201. Buffer layer, 202. Unintentionally doped layer, 203. LED epitaxial structure, 204. N-type conductive layer, 205. Light emitting layer, 206. P-type conductive layer, 207. Transparent conductive layer, 208 , contact layer, 2081, P pole metal layer, 2082, contact electrode, 210, phenolic hydroxyl polymer film layer;

300, 300', substrate, 310, 310', barrier layer, 320, 320' through hole, 330, 330' azide polymer film layer;

400. Polar solution.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

The mass transfer method is not limited by the spacing between LED chips on the substrate, and utilizes the strong hydrogen-donating ability of the hydroxyl group in the phenolic hydroxyl polymer (anionic polyelectrolyte) and the electron-donating ability of the azide group in the azide polymer (cationic polyelectrolyte), so that the phenolic hydroxyl polymer and the azide polymer attract each other, so that the LED chip with the phenolic hydroxyl polymer film layer is self-assembled on the surface of the azide polymer film layer, and the phenolic hydroxyl polymer film layer Form an assembled film layer based on hydrogen bonds with the azide polymer film layer, and then use ultraviolet light to make the phenolic hydroxyl polymer and the azide polymer undergo an azidation reaction to form a covalent bond and form a covalent connection, so that the LED chip can be used Fast and accurate transfer to the corresponding pixels on the substrate, improving transfer efficiency and transfer accuracy. As a typical application, the mass transfer method of the present invention can be applied to the manufacture of a display panel, and the prepared display panel can be applied to a mobile terminal, the mobile terminal includes a terminal body and a display panel, and the mobile terminal can For: mobile phones, tablet computers, televisions, monitors, laptops, digital photo frames, navigators and any other products or components with realistic functions.

Referring to Fig. 1 and Fig. 2a-Fig. 2i, in one embodiment of the present invention, the mass transfer method includes the following steps:

S1, providing a substrate 100;

S2, forming a plurality of LED chips 200 on the surface of the substrate 100;

S3, forming a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200;

S4, separating a plurality of the LED chips 200 from the substrate 100;

S5, providing the substrate 300;

S6, forming a barrier layer 310 on the surface of the substrate 300;

S7, forming a plurality of through holes 320 exposing at least part of the surface of the substrate 300 on the surface of the barrier layer 310;

S8, forming an azide polymer film layer 330 in at least part of the through hole 320;

S9, transferring the LED chip 200 to the substrate 300;

S10, the LED chip 200 is assembled with the azide polymer film layer 330 through the phenolic hydroxyl polymer film layer 210;

S11. UV light makes the phenolic hydroxyl polymer film 210 and the azide polymer film 330 form a covalent bond.

In this embodiment, referring to FIG. 2b, the step S2 of forming a plurality of LED chips 200 on the surface of the substrate 100 further includes forming a buffer layer 201, an unintentionally doped layer 202 and The LED epitaxial structure 203, the LED epitaxial structure includes an N-type conductive layer 204, a light-emitting layer 205, a P-type conductive layer 206, a transparent conductive layer 207 and a contact layer 208 formed on the surface of the unintentionally doped layer 202 by epitaxial growth in sequence The contact layer 208 includes a P-electrode metal layer 2081 formed on the transparent conductive layer 207 and a contact electrode 2082 formed on the surface of the light emitting layer 205 . The material of the unintentionally doped layer 202 is, for example, GaN, the material of the N-type conductive layer 204 is, for example, N-GaN, and the material of the P-type conductive layer 206 is, for example, P-GaN. Epitaxial growth methods include, for example, metal chemical vapor deposition, laser-assisted molecular beam epitaxy, laser sputtering, or hydride vapor phase epitaxy.

Step S3 forms a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200 by coating, thereby realizing the functionalization of the phenolic hydroxyl group on the surface of the LED chip. Wherein, the colors of the plurality of LED chips 200 in step S3 are the same, which are red (R), green (G) or blue (B). In this embodiment, the LED chips are Micro-LED chips, and the color is red ( R), the substrate 100 is a sapphire substrate.

Step S4 uses laser lift-off (Laser Lift-off, LLO) technology to lift off a plurality of LED chips 200 from the substrate 100 .

In step S6, a barrier layer 310 is coated on the surface of the substrate 300 by using a coater. In this embodiment, the barrier layer 310 is a photoresist layer. In step S7, through exposure, development and baking, the A plurality of barrier walls 311 arranged at intervals are formed on the surface of the barrier layer 310 , and the through hole 320 is formed between two adjacent barrier walls 311 .

In step S8, an azide polymer film layer 330 is formed by spraying an azide polymer in the through hole 320 by inkjet printing (IJP) technology.

In steps S9 and S10, put the substrate 300 with the retaining wall 311 and the azide polymer film layer 330 and a plurality of LED chips 200 coated with the phenolic hydroxyl polymer film layer 210 into water or a polar solution 400 Mixing and stirring, the LED chip coated with the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 sprayed in the through hole 320 perform targeted self-assembly in water or a polar solution to realize the LED chip to the substrate Transfer within 300 surface pixel units. Wherein, the polar solution 400 is an electrolyte solution.

Wherein, the targeted self-assembly principle between the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 is as follows:

The hydroxyl group in the phenolic hydroxyl polymer has a strong hydrogen-donating ability (belonging to anionic polyelectrolyte), the azide group in the azide polymer has an electron-donating ability (belonging to a cationic polyelectrolyte), and the anionic polyelectrolyte and cationic polyelectrolyte attract each other ( That is, the azide polymer film layer 330 attracts the phenolic hydroxyl polymer film layer 210 to form a targeted guide), and the hydroxyl group of the phenolic hydroxyl polymer film layer 210 combines with the azide group of the azide polymer film layer 330 to form hydrogen The hydrogen bond belongs to the weak interaction between molecules. The weak molecular force generated by the formation of hydrogen bonds between the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 combines with each other to realize the self-assembly of the LED chip 200 on the substrate 300 .

In step S11, the function of the ultraviolet light is to cause an azide reaction between the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 to form an N-N covalent bond to achieve covalent bonding, thereby ensuring the assembly of the LED chip 200 and the substrate 300 stability.

In this embodiment, a plurality of LED chips 200 of the same color can be transferred to the corresponding pixel positions of the substrate 300. In this embodiment, the red (R) LED chip 200 is taken as an example, that is, the substrate 300 is provided with LED chips arranged in an array. a plurality of pixel units (not shown in the figure), the arrangement of the through holes 320 corresponds to the arrangement of the pixel units, and one through hole 320 corresponds to one pixel unit. In step S7, a The pixel colors of the pixel units corresponding to the through holes 320 are the same, for example, they are all red (R), all green (G) or all blue (B). In this embodiment, the pixel colors are all red (R) as For example, that is, the opened multiple through holes 320 only expose the surface of the substrate 300 corresponding to the red pixels, but do not expose the surfaces of the substrate 300 corresponding to the blue pixels and green pixels, and then inkjet printing (IJP) technology is used to print The azide polymer is sprayed in the through hole 320 to form the azide polymer film layer 330, so that the purpose of transferring the single-color LED chip 200 to the corresponding pixel unit on the surface of the substrate 300 can be realized at one time. At this time, since the pixel color is green pixel unit The azide polymer film layer 330 is not formed in the corresponding through hole 320 and the through hole 320 corresponding to the pixel unit whose pixel color is blue.

Then repeat steps S7 to S11 and refer to FIG. 3 , inkjet print the azide polymer film layer 330 in the through hole 320 corresponding to the pixel unit whose pixel color is green, and transfer the green (G) LED chip 200 to the corresponding through hole 320, the transfer of the green (G) LED chip 200 to the substrate 300 is completed, and since the transfer of the red (R) LED chip 200 has been completed in the through hole 320 corresponding to the pixel unit whose pixel color is red, the pixel The azide polymer film layer 330 is not formed in the through hole 320 corresponding to the pixel unit whose color is blue, and the blue (B) LED chip 200 cannot be transferred to the substrate 300; Inkjet print the azide polymer film layer 330 in the through hole 320 corresponding to the pixel unit whose pixel color is blue, and transfer the blue (B) LED chip 200 into the corresponding through hole 320 to complete the blue (B) LED Transfer of chip 200 to substrate 300 .

In step S2, a plurality of LED chips 200 of the same color, such as red (R) LED chips 200, may be formed on the surface of the substrate 100, and then proceed to steps S3-S11. Then repeat steps S1 to S11 to complete the transfer of the green (G) LED chip 200 to the substrate 300 and the transfer of the blue (B) LED chip 200 to the substrate 300 to ensure that the single-color LED chip 200 is transferred to the corresponding color on the surface of the substrate 300 in pixel units.

In a preferred mode of the present invention, referring to Figure 4, Figures 2a-2d and Figures 5a-5e, the mass transfer method includes the following steps:

Sa, providing the substrate 100;

Sb, forming a plurality of LED chips 200 on the surface of the substrate 100;

Sc, forming a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200;

Sd, separating a plurality of said LED chips 200 from the substrate 100;

Se, providing a substrate 300';

Sf, forming an azide polymer film layer 330' on the surface of the substrate 300';

Sg, forming a barrier layer 310' on the surface of the azide polymer film layer 330';

Sh, forming at least one through hole 320' exposing at least part of the surface of the azide polymer film layer 330' on the surface of the barrier layer 310';

Si, transferring the LED chip 200 to the substrate 300';

Sj, the LED chip 200 is assembled through the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330' exposed to the through hole 320';

Sk, ultraviolet light makes the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330' form a covalent bond.

In this preferred mode, an azide polymer film layer 330' is formed on the surface of the substrate 300', and then a barrier layer 310' is formed on the azide polymer film layer 330'. After exposure, development and baking, the A plurality of barrier walls 311' arranged at intervals are formed on the surface of the barrier layer 310', and the through holes 320' are formed between two adjacent barrier walls 311', and the through holes 320' correspond to the pixel units on the surface of the substrate 300'. The pixels in the pixel units corresponding to the through holes 320' have the same color, for example, they are all red. A plurality of LED chips 200 are transferred to the substrate 300', and the LED chips 200 are exposed through the phenolic hydroxyl polymer film layer 210 and the through holes 320'. The azide polymer film layer 330' is targeted for self-assembly, and the azide reaction between the phenolic hydroxyl polymer and the azide polymer is formed by ultraviolet light to form a covalent bond, and the red (R) LED chip 200 is mapped to the surface of the substrate 300'. Pixel unit transfer.

Then repeat steps Se～step Sk and referring to FIG. 6, form a through hole 320' corresponding to a pixel unit whose pixel color is green on the surface of the barrier layer 310' to expose the corresponding azide polymer film layer 330', and turn green (G) The LED chip 200 is transferred to the corresponding through hole 320' to complete the transfer of the green (G) LED chip 200 to the substrate 300'; and then repeat steps Se to Sk to form a color matching pixel color on the surface of the barrier layer 310'. The blue (B) LED chip 200 is transferred into the corresponding through hole 320 ′ corresponding to the blue pixel unit to complete the transfer of the blue (B) LED chip 200 to the substrate 300 ′.

Wherein, in step Sb, a plurality of LED chips 200 of the same color, such as red (R) LED chips 200, are formed on the surface of the substrate 100, and then steps S3-S11 are continued. Then repeat steps S1 to S11 to complete the transfer of the green (G) LED chip 200 to the substrate 300' and the transfer of the blue (B) LED chip 200 to the substrate 300', thereby ensuring that the single-color LED chip 200 is transferred to the substrate 300' The surface corresponds to the color within the pixel unit.

In this embodiment, the phenolic hydroxyl polymer forming the phenolic hydroxyl polymer film layer 210 includes but not limited to polyaniline, phenolic resin, calixarene compound and 4-hydroxyphenyl porphyrin, in this embodiment, the phenolic hydroxyl The polymer is specifically selected from poly[styrene-co-N-(4-hydroxyphenyl)maleimide] (P(S-co-HPMI)) or poly(p-vinylphenol) (PVPh). The azide polymer forming the azide polymer film layer 330, 330' includes but is not limited to diazo resin and its derivatives. In this embodiment, the azide polymer is specifically selected from diazo resin. The azide polymer film layer 330, 330' can be baked to form an ultra-thin film on the surface of the substrate 300, 300'. The wavelength of ultraviolet light used for ultraviolet light is ≤400nm, and the illumination time is 15min.

The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications should also be considered Be the protection scope of the present invention.

Claims (10)

1. A mass transfer method, characterized in that, comprising: provide the substrate; forming a plurality of LED chips on the surface of the substrate; Forming a phenolic hydroxyl polymer film layer on the surface of the LED chip; separating a plurality of said LED chips from the substrate; Provide the substrate; forming a barrier layer on the surface of the substrate; forming a plurality of through holes exposing at least part of the surface of the substrate on the surface of the barrier layer; forming an azide polymer film layer within at least part of the through hole; transferring the LED chips to the substrate; The LED chip is assembled with the azide polymer film layer through the phenolic hydroxyl polymer film layer; The ultraviolet light makes the phenolic hydroxyl polymer film layer and the azide polymer film layer form a covalent bond. 2. A mass transfer method, comprising: provide the substrate; forming a plurality of LED chips on the surface of the substrate; Forming a phenolic hydroxyl polymer film layer on the surface of the LED chip; separating a plurality of said LED chips from the substrate; Provide the substrate; forming an azide polymer film layer on the surface of the substrate; forming a barrier layer on the surface of the azide polymer film layer; forming at least one through hole exposing at least part of the surface of the azide polymer film layer on the surface of the barrier layer; transferring the LED chips to the substrate; The LED chip is assembled through the phenolic hydroxyl polymer film layer and the azide polymer film layer exposed to the through hole; The ultraviolet light makes the phenolic hydroxyl polymer film layer and the azide polymer film layer form a covalent bond. 3. The mass transfer method according to claim 2, wherein the step of making the phenolic hydroxyl polymer film layer and the azide polymer film layer form a covalent bond by the ultraviolet light irradiation also includes stripping The liquid strips the barrier layer. 4. mass transfer method as claimed in claim 1 or 2, is characterized in that, the phenolic hydroxyl polymer that forms described phenolic hydroxyl polymer film layer includes but not limited to polyaniline, phenolic resin, calixarene compound and 4. -Hydroxyphenylporphyrin. 5. The mass transfer method according to claim 1 or 2, wherein the azide polymer forming the azide polymer film layer includes but not limited to diazo resin and its derivatives. 6. The mass transfer method according to claim 1 or 2, wherein the step of transferring the LED chips to the substrate further comprises placing the substrate and the LED chips in water or polar solution and stir to mix. 7. The mass transfer method according to claim 1 or 2, wherein the step of separating the plurality of LED chips from the substrate comprises: separating the plurality of LED chips from the substrate by laser lift-off technology. separated from the substrate. 8. The mass transfer method according to claim 1 or 2, characterized in that, the azide polymer film layer is formed on the surface of the substrate by inkjet printing, and the arrangement of the through holes is the same as that of the The arrangement of the pixel units on the substrate is corresponding, the color of the pixel unit corresponding to the through hole exposing the azide polymer film layer corresponds to the color of the LED chip, and the color of the pixel unit formed on the surface of the substrate The multiple LED chips have the same color. 9. The mass transfer method according to claim 1 or 2, wherein the barrier layer is a photoresist layer, and the step of forming the through hole on the surface of the barrier layer comprises: The layers are exposed, developed and baked to form the vias. 10. The mass transfer method according to claim 1 or 2, wherein the step of forming a plurality of LED chips on the surface of the substrate further comprises epitaxial growth on the surface of the substrate to form a buffer layer, An unintentionally doped layer and an LED epitaxial structure, the LED epitaxial structure includes an N-type conductive layer, a light-emitting layer, a P-type conductive layer, a transparent conductive layer and a contact layer formed on the surface of the unintentionally doped layer by epitaxial growth in sequence, The contact layer includes a P-electrode metal layer formed on the transparent conductive layer and a contact electrode formed on the surface of the light-emitting layer.