CN107369647A - A kind of LED array substrate and preparation method thereof, display device - Google Patents
A kind of LED array substrate and preparation method thereof, display device Download PDFInfo
- Publication number
- CN107369647A CN107369647A CN201710758637.0A CN201710758637A CN107369647A CN 107369647 A CN107369647 A CN 107369647A CN 201710758637 A CN201710758637 A CN 201710758637A CN 107369647 A CN107369647 A CN 107369647A
- Authority
- CN
- China
- Prior art keywords
- substrate
- electrode
- electrodes
- functional layer
- emitting functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供一种LED阵列基板及其制备方法、显示装置，涉及显示技术领域，可解决发光功能层与基板的对位精度高的技术难题。所述LED阵列基板的制备方法，包括：在第一基板上形成至少一组电极组，所述电极组包括至少三个等间距设置的第一电极；在磁场作用下，控制所述电极组移动至一个像素区域，且每个所述第一电极位于所述像素区域的一个子像素区域中；在形成有所述第一电极的第一基板上形成对应每个所述第一电极的发光功能层；将所述第一基板上的所述发光功能层以及所述第一电极转移至第二基板上，使所述发光功能层与位于所述第二基板上子像素区域的第二电极一一对应并接触，形成LED。
The invention provides an LED array substrate, a preparation method thereof, and a display device, which relate to the field of display technology and can solve the technical problem of high alignment accuracy between a light-emitting functional layer and a substrate. The preparation method of the LED array substrate includes: forming at least one electrode group on the first substrate, the electrode group including at least three first electrodes arranged at equal intervals; under the action of a magnetic field, controlling the movement of the electrode group to a pixel area, and each of the first electrodes is located in a sub-pixel area of the pixel area; a light emitting function corresponding to each of the first electrodes is formed on the first substrate formed with the first electrodes layer; transferring the luminescent functional layer and the first electrode on the first substrate to a second substrate, so that the luminescent functional layer and the second electrode located in the sub-pixel region on the second substrate are aligned One-to-one correspondence and contact form an LED.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of LED array substrate and preparation method thereof, display device.
Background technology
LED (Light Emitting Diode, light emitting diode) belongs to one kind of semiconductor diode, is a kind of dependence
The luminous photoelectric cell of the unilateral conduction of semiconductor PN, LED are widely used illumination members on current worldwide market
Part, have the advantages that small volume, brightness are high, power consumption is low, heating less, service life it is long, environmentally friendly.
LED plays in the electronic product that mobile phone, TV, computer etc. need backlight to show indispensable as backlight
Effect.As the continuous diminution of electronic product size is, it is necessary to which the size of LED chip also can significantly reduce, with less
Stronger more stable display brightness is realized in size range.
Micro LED (micro- LED) technology, i.e. LED chip micromation and matrixing technology, refer in a substrate (this
Art personnel should be appreciated that the circuit being provided with the substrate for driving LED array, therefore the substrate can also be chip)
The LED array of upper integrated high density microsize, forms LED array substrate (or being Micro LED chips).Each of which
Micro- LED (LED particulates) can addressing, single-point driving it is luminous, also with high brightness, low-power consumption, super-resolution degree and color saturation
The advantages that so that it is widely used.
When micro- LED array is set onto substrate, typically micro- LED light emitting functional layer is prepared in outside, so
After be transferred on substrate, be consistent in order to ensure each micro- LED light efficiency and wavelength, it is necessary to which light emitting functional layer is accurately set
Put in the subpixel area on substrate.Light emitting functional layer is placed into sub-pixel area typically by manipulator in the prior art
In domain, this aligning accuracy to manipulator requires very high, or even to reach micron order, adds technology difficulty.
The content of the invention
Embodiments of the invention provide a kind of LED array substrate and preparation method thereof, display device, can solve lighting function
The layer technical barrier high with the aligning accuracy of substrate.
To reach above-mentioned purpose, embodiments of the invention adopt the following technical scheme that：
First aspect, there is provided a kind of preparation method of LED array substrate, including：Formed on the first substrate at least one set of
Electrode group, the electrode group include the first electrode of at least three spaced sets；Under magnetic fields, the electrode group is controlled
A pixel region is moved to, and each first electrode is located in a subpixel area of the pixel region；In shape
The light emitting functional layer of corresponding each first electrode is formed on into the first substrate for having the first electrode；By first base
The light emitting functional layer and the first electrode on plate are transferred on second substrate, are made the light emitting functional layer and are located at institute
The second electrode for stating subpixel area on second substrate is corresponded and contacted, and forms LED.
Preferably, at least one set of electrode group is formed on the first substrate, and the electrode group is equidistantly set including at least three
The first electrode put；Under magnetic fields, the electrode group is controlled to be moved to a pixel region, and each first electrode
In a subpixel area of the pixel region, specifically include：The surface of first substrate by patterning processes or
Evaporation process forms at least one set of electrode group；The opposite sides face of the first substrate is provided with a pair of magnetic poles, and described
One electrode moves in the presence of magnetic field caused by the magnetic pole, until each first electrode is located at a sub-pixel
During region, eliminate the magnetic pole caused by magnetic field, the first electrode is stopped movement.
Preferably, the opposite sides face of the first substrate is provided with a pair of magnetic poles, and the first electrode is in the magnetic pole
Moved in the presence of caused magnetic field, until when each first electrode is located at a subpixel area, described in elimination
Magnetic field caused by magnetic pole, the first electrode is stopped movement, specifically include：The opposite sides face of the first substrate is provided with
A pair of magnetic poles, the pixel region are provided with locating piece, close to the locating piece the first electrode the magnetic field work
It is moved under after being contacted with the locating piece, the magnetic pole stops producing magnetic field.
Preferably, the material of the locating piece is inert polymer compound.
Preferably, the luminous of corresponding each first electrode is formed on the first substrate formed with the first electrode
Functional layer, specifically include：First that the covering electrode group is sequentially formed on the first substrate formed with the electrode group is mixed
Miscellaneous film layer, SQW film layer and the second doping film layer；Wherein, the first doping film layer and described second adulterates film layer n each other
Type adulterates film layer and p-type doping film layer；Using dry etch process to the described first doping film layer, the SQW film layer and institute
State the second doping film layer to perform etching, form the light emitting functional layer.
Preferably, the light emitting functional layer on the first substrate and the first electrode are transferred to second substrate
On, the light emitting functional layer is corresponded with the second electrode positioned at subpixel area on the second substrate, specifically include：
By nanometer transfer printing technology, the light emitting functional layer on the first substrate and the first electrode are transferred to the second base
On plate, the light emitting functional layer is set to be corresponded with the second electrode positioned at subpixel area on the second substrate.
Preferably, by transfer technique, by the light emitting functional layer on the first substrate and the first electrode
It is transferred on second substrate, makes the light emitting functional layer with being located at the second electrode of subpixel area on the second substrate one by one
It is corresponding, specifically include：The first substrate and the second substrate are relatively moved, makes the light emitting functional layer and the described second electricity
Pole contacts；The first substrate and the second substrate are subjected to pixel region contraposition；The first substrate is pressurizeed, made described
Light emitting functional layer is adhered in the second electrode；Take off from the first substrate.
Based on above-mentioned, it is preferred that the first substrate is glass substrate or silicon substrate.
Second aspect, there is provided a kind of LED array substrate, be prepared by the method described in first aspect.
The third aspect, there is provided a kind of display device, including the LED array substrate described in second aspect.
LED array substrate provided in an embodiment of the present invention and preparation method thereof, display device, by using magnetic contraposition
Principle, the first electrode on first substrate is moved in magnetic fields in default subpixel area, and with the second base
Plate is its reserved position correspondence in subpixel area, so, by first substrate and second substrate contraposition after, can directly by
First electrode and corresponding light emitting functional layer are transferred at the reserved location of second substrate, can simply be realized luminous
The accurate contraposition of functional layer and second substrate.
In addition, preparation method provided by the invention, once can at least complete the transfer and preparation of a pixel cell, and
And without exactitude position, the middle transfer that the single sub-pixel of word is realized using manipulator, can reduce contraposition compared with prior art
The requirement of precision, improve production efficiency, reduce cost.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of flow chart of OLED array preparation method provided in an embodiment of the present invention；
Fig. 2-7 is the preparation process schematic diagram of OLED array provided in an embodiment of the present invention.
Reference
100- first substrates；200- second substrates；10- electrode groups；11- first electrodes；20- light emitting functional layers；21- first
Adulterate film layer；22- SQW film layers；23- second adulterates film layer；30- second electrodes；41st, 42- magnetic poles；50- locating pieces.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of preparation method of LED array substrate, as shown in figure 1, including：
S10, as shown in Fig. 2 form at least one set of electrode group 10 on first substrate 100, electrode group 10 includes at least three
Individual spaced set first electrode 11；Under magnetic fields, coordination electrode group 10 is moved to a pixel region, and each first
Electrode 11 is located in a subpixel area of pixel region.
Herein, the generation type of electrode group 10 is not defined, such as patterning processes or evaporation work can be passed through
Skill, other techniques are can also be certainly.Under magnetic fields, electrode group 10 and the absorption affinity of first substrate 100 are less than magnetic field force,
The direction that first electrode 11 moves is parallel with the direction in magnetic field.
Wherein, under the action of a magnetic force, it is multiple if the translational speed of multiple first electrodes 11 in electrode group 10 is identical
The spaced set of first electrode 11, when a first electrode 11 is moved to a subpixel area, in an electrode group 10
Each first electrode 11 is moved in corresponding subpixel area.
It will be understood by those skilled in the art that as shown in Fig. 2 to make position of each first electrode 11 in subpixel area
Put it is identical, the distance between two neighboring central point of first electrode 11 S2 should be equal to two neighboring subpixel area central point between
Distance S1.
In addition, for the number of the electrode group 10 formed on first substrate 100, can be according to specific technique and structure
Selected, the number of the first electrode 11 included for electrode group 10, according to including for OLED array to be formed
The number of subpixel area determine, the corresponding subpixel area of a first electrode 11.
S20, as shown in figure 3, forming corresponding each first electrode 11 on the first substrate 100 formed with first electrode 11
Light emitting functional layer 20.
Wherein, the light that corresponding multiple light emitting functional layers 20 are sent in pixel region primary colours each other a, for example, picture
Three light emitting functional layers 20 are included in plain region, the light that three light emitting functional layers 20 are sent is respectively red, green, blue.Or one
Including four light emitting functional layers 20 in pixel region, the light that four light emitting functional layers 20 are sent is respectively red, green, blue, white, or
The combination of other primary colours.
In addition, not being defined to the mode for forming light emitting functional layer 20, light emitting functional layer 20 can be formed in the prior art
Technique be applied to the present invention.
S30, as shown in figure 4, the light emitting functional layer 20 on first substrate 100 and first electrode 11 are transferred into the second base
On plate 200, make light emitting functional layer 20 with corresponding and connecing positioned at the second electrode 30 of subpixel area on second substrate 200
Touch, form LED.
It will be understood by those skilled in the art that the light emitting functional layer 20 on first substrate 100 is transferred directly to the second base
On plate 200, then, the size and the size of the pixel region on second substrate 200 of the pixel region on first substrate 100 answer phase
Together.Also, position of the first electrode 11 in the subpixel area of first substrate 100, should be with the sub-pixel area of second substrate 200
Domain is its reserved position correspondence., can be by light emitting functional layer 20 and after first substrate 100 and second substrate 200 are aligned
One electrode 11 is transferred directly to formation LED array substrate at the reserved location on second substrate 200.Herein, LED array substrate is
For the substrate formed with LED array, LED array includes the micro LED (20) of multiple array arrangements.
The preparation method of LED array substrate provided in an embodiment of the present invention, the principle aligned by using magnetic, makes first
First electrode 11 on substrate 100 is moved in default subpixel area in magnetic fields, and is existed with second substrate 200
Subpixel area is its reserved position correspondence, so, can be direct after first substrate 100 and second substrate 200 are aligned
First electrode 11 and corresponding light emitting functional layer 20 are transferred at the reserved location of second substrate 200, can be simple
The accurate contraposition for realizing light emitting functional layer 20 and second substrate 200.
In addition, preparation method provided by the invention, once can at least complete the transfer and preparation of a pixel cell, and
And without exactitude position, the middle transfer that the single sub-pixel of word is realized using manipulator, can reduce contraposition compared with prior art
The requirement of precision, improve production efficiency, reduce cost.
Preferably, step S10, specifically include：
Step S11, at least one set of electrode is formed by patterning processes or evaporation process on the surface of first substrate 100
Group.
For example, form one group of electrode group 10 by a patterning processes：
One layer of conductive film layer is formed on first substrate 100；
One layer of photoresist is formed on conductive film layer；
By expose, develop to be formed photoresist be fully retained part and photoresist remove part；Wherein, photoresist is protected completely
Stay part corresponding with first electrode 11 to be formed.
First electrode 11 is formed by etching, removes remaining photoresist.
It is of course also possible to use evaporation process, forms first electrode 11.
Step S12, as shown in Fig. 2 the opposite sides face of first substrate 100 is provided with a pair of magnetic poles (41,42), the first electricity
Pole 11 is moved in the presence of magnetic field caused by magnetic pole (41,42), until each first electrode 11 is located at a subpixel area
When, magnetic field caused by elimination magnetic pole (41,42), first electrode 11 is stopped movement.
As shown in Fig. 2 first substrate 100 has two groups of relative both sides, first electrode 11 is to being provided with magnetic pole (41 or 42)
Side movement.That is, the line of two magnetic poles (41 and 42) is parallel with the mobile route of first electrode 11.
Wherein, for example, can by using evaporation, sputter or other painting methods by thin magnetic material layer (for example, iron
(Fe), cobalt (Co), nickel (Ni), manganese (Mn) or its any combinations) it is coated on the both sides of first substrate 100.Magnetic pole (41 and 42) can
To be electromagnet, electromagnet is powered to apply electric field.Magnetic pole (41 and 42) can also be permanent magnet to apply magnetic field.
Preferably, as shown in figure 5, pixel region is provided with locating piece 50, the first electrode 11 close to locating piece 50 is in magnetic
After being contacted in the presence of with locating piece 50, magnetic pole (41 and 42) stops producing magnetic field.
Wherein, it will be understood by those skilled in the art that locating piece 50 is used to position first electrode 11, therefore, the
One magnetic pole 11 should be moved to the side for being provided with locating piece 50.As shown in figure 5, if the area of subpixel area is more than first
The area of electrode 11, then locating piece 50 be arranged on the inside of pixel region.If the area of subpixel area is equal to first electrode 11
Area, then coincident of the locating piece 50 close to the edge of pixel region and pixel region close to locating piece 50.
In addition, for example magnetic pole (41 and 42) can be made to stop producing magnetic by way of stopping being powered to magnetic pole (41 and 42)
Or magnetic pole (41 and 42) is stopped generation magnetic field by the way of magnetic pole (41 and 42) using removing.
Certainly, when forming multiple electrodes group 10 on first substrate 100, corresponding locating piece 50 should also be to individual one
The corresponding locating piece 50 of individual electrode group 10.
Preferably, the material of locating piece 50 is inert polymer compound.
Specifically, locating piece 50 for example can be polyethylene, polypropylene, polyvinyl chloride, polystyrene, styrene-propene
The high-molecular compounds such as lonitrile copolymer, acrylonitrile-butadiene-styrene copolymer, polymethacrylates.Forming luminous work(
During ergosphere 20, locating piece 50 will not be had a huge impact.
Preferably, step S20, specifically include：
S21, as shown in fig. 6, sequentially forming the of covering electrode group 10 on the first substrate 100 formed with electrode group 10
One doping film layer 21, SQW film layer 22 and second adulterate film layer 23；Wherein, the first doping film layer 21 and second adulterates film layer 23
N-type doping film layer and p-type doping film layer each other.
S22, using dry etch process to first doping film layer 21, SQW film layer 22 and second adulterate film layer 23 carry out
Etching, form light emitting functional layer 20.
Wherein, LED is mainly made up of PN junction, has unilateral conduction, its principle of luminosity is：To LED plus forward voltage
Afterwards, it is injected into the hole in N areas from P areas and the electronics in P areas is injected by N areas, the electricity with N areas respectively in a few micrometers near the PN
Son and the hole-recombination in P areas, electronics and hole produce photon while disappearance, that is, generate the fluorescence of spontaneous radiation.Different
Electronics and energy state (band gap) residing for hole are different in semi-conducting material.The energy discharged when electronics and hole-recombination
How many different, the energy between electronics and hole is bigger, and the energy of caused photon is higher.The energy of photon in turn with light
Color it is corresponding, because different materials has different band gap, so as to send the light of different colours.
First doping film layer 21 can be n-type doping film layer, and now the second doping film layer 23 is that p-type adulterates film layer；First
Doping film layer 21 can also be p-type doping film layer, and now the second doping film layer 23 is that n-type adulterates film layer.
Certainly, may be otherwise is after being initially formed the first doping film layer 21, and the first doping is formed by dry etch process
Layer；SQW film layer 22 is re-formed, quantum well layer is formed by dry etch process, the second doping film layer 23 is re-formed, passes through
Dry etch process forms the second doped layer.
In order to simplify technique, the influence to other film layers is reduced, the embodiment of the present invention preferably first adulterates film layer 21, quantum
After the doping of trap film layer 22 and second film layer 23 is respectively formed, passes through dry etch process and form light emitting functional layer 20.
Preferably, step S30, specifically include：By nanometer transfer printing technology, by the light emitting functional layer on first substrate 100
20 and first electrode 11 be transferred on second substrate 200, make light emitting functional layer 20 and the sub-pixel area on the second substrate 200
The second electrode 30 in domain corresponds.
Wherein, at present the basic idea of nanometer transfer printing technology be by template by pattern transfer to corresponding bottom, this
The figure that template can have the template of certain nano graph or prepare, nanometer transfer printing can simply be divided into
Three kinds：Hot Cheng Mo, plastic film and micro-contact printing.Hot Cheng Mo：Pattern transfer is carried out by polymer.Polymer coating is heated to
Carrying out cooling after glass transition temperature (Tg), after contact template makes figure be fixed up.Plastic film：One layer of low viscosity of painting is gathered
Monomer adduct, under halogen light irradiation, ultraviolet light light can make these monomers that polymerisation occur, and be cross-linked with each other to form solid knot
Structure, so that figure remains.Micro-contact printing：The figure made is prepared on the printed board, afterwards by connecing first
Touching makes self assembled monolayer be attached to substrate surface, completes pattern transfer.
It is further preferred that step S30, is specifically included：
S31, as shown in fig. 7, relative movement first substrate 100 and second substrate 200, makes light emitting functional layer 20 and second electric
Pole 30 contacts.
Wherein it is possible to it is and the first substrate 100 as shown in fig. 7, first substrate 100 and second substrate 200 are oppositely arranged
It is oppositely arranged above second substrate 200 or by first substrate 100 and second substrate 200, and first substrate 100
In the lower section of second substrate 200, make first substrate 100 and second substrate 200 to setting, and relatively move first substrate 100
With second substrate 200, second electrode 30 is set to be contacted with light emitting functional layer 20.
S32, first substrate 100 and second substrate 200 be subjected to pixel region contraposition.
For example, it may be by setting contraposition part on first substrate 100 and second substrate 200, make first substrate 100
The pixel region of pixel region light emitting functional layer 20 to be placed with second substrate 200 be aligned completely so that light emitting functional layer 20
The region reserved with second substrate 200 is aligned completely.
S33, to the temperature-pressure of first substrate 100, light emitting functional layer 20 is adhered in second electrode 30.
Wherein, it will be understood by those skilled in the art that when being pressurizeed to first substrate 100, it should be noted that set and applied
Pressure scope, avoid excessive other film layers caused on first substrate 100 and second substrate 200 of pressure from damaging.Apply herein
The pressure added, reasonable selection is carried out according to the structure of each film layer on first substrate 100 and second substrate 200, not limited.
S34, take off from first substrate 100.
That is, as shown in figure 4, taking off from formation LED array substrate after first substrate 100.
Based on above-mentioned, glass substrate or silicon substrate can be used in first substrate 100；Second substrate 200 can be used glass substrate,
Silicon substrate, plastics or other flexible base boards.
The embodiment of the present invention also provides a kind of LED array substrate, and the LED array substrate is prepared into by the above method
Arrive.
The beneficial effect for the LED array substrate being prepared by the above method is identical with the beneficial effect of the above method,
Here is omitted.
The embodiment of the present invention also provides a kind of display device, including above-mentioned LED array substrate.
The display device of the present invention can be top emitting, bottom emitting or both-side emission structure, and the embodiment of the present invention is to this
It is not construed as limiting.
Display device provided by the invention includes above-mentioned LED array substrate, its advantage and above-mentioned LED array substrate
Beneficial effect is identical, and here is omitted.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710758637.0A CN107369647B (en) | 2017-08-29 | 2017-08-29 | A kind of LED array substrate and its preparation method, display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710758637.0A CN107369647B (en) | 2017-08-29 | 2017-08-29 | A kind of LED array substrate and its preparation method, display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107369647A true CN107369647A (en) | 2017-11-21 |
| CN107369647B CN107369647B (en) | 2019-08-09 |
Family
ID=60311037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710758637.0A Expired - Fee Related CN107369647B (en) | 2017-08-29 | 2017-08-29 | A kind of LED array substrate and its preparation method, display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107369647B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494993A (en) * | 2018-03-14 | 2019-11-22 | 京东方科技集团股份有限公司 | By multiple micro-led methods for being transferred to target base plate, array substrate and its display equipment |
| CN111180379A (en) * | 2019-12-26 | 2020-05-19 | 华灿光电(苏州）有限公司 | Micro light-emitting diode epitaxial wafer, display array and fabrication method thereof |
| CN118016611A (en) * | 2024-04-08 | 2024-05-10 | 惠科股份有限公司 | Display panel and display device |
| WO2024222219A1 (en) * | 2023-04-26 | 2024-10-31 | 深圳Tcl新技术有限公司 | Light-emitting lamp panel manufacturing method, light-emitting lamp panel, and display apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206611A (en) * | 2016-08-19 | 2016-12-07 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN106571371A (en) * | 2015-10-09 | 2017-04-19 | 群创光电股份有限公司 | Array substrate, application device thereof and assembly method |
| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
-
2017
- 2017-08-29 CN CN201710758637.0A patent/CN107369647B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
| CN106571371A (en) * | 2015-10-09 | 2017-04-19 | 群创光电股份有限公司 | Array substrate, application device thereof and assembly method |
| CN106206611A (en) * | 2016-08-19 | 2016-12-07 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494993A (en) * | 2018-03-14 | 2019-11-22 | 京东方科技集团股份有限公司 | By multiple micro-led methods for being transferred to target base plate, array substrate and its display equipment |
| US11387212B2 (en) | 2018-03-14 | 2022-07-12 | Boe Technology Group Co., Ltd. | Method of transferring a plurality of micro light emitting diodes to a target substrate, array substrate and display apparatus thereof |
| CN110494993B (en) * | 2018-03-14 | 2022-12-16 | 京东方科技集团股份有限公司 | Method for transferring micro light emitting diodes to target substrate, array substrate and display device thereof |
| CN111180379A (en) * | 2019-12-26 | 2020-05-19 | 华灿光电(苏州）有限公司 | Micro light-emitting diode epitaxial wafer, display array and fabrication method thereof |
| CN111180379B (en) * | 2019-12-26 | 2022-05-13 | 华灿光电(苏州）有限公司 | Micro light-emitting diode epitaxial wafer, display array and fabrication method thereof |
| WO2024222219A1 (en) * | 2023-04-26 | 2024-10-31 | 深圳Tcl新技术有限公司 | Light-emitting lamp panel manufacturing method, light-emitting lamp panel, and display apparatus |
| CN118016611A (en) * | 2024-04-08 | 2024-05-10 | 惠科股份有限公司 | Display panel and display device |
| CN118016611B (en) * | 2024-04-08 | 2024-07-09 | 惠科股份有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107369647B (en) | 2019-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101088140B (en) | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices | |
| CA2560701C (en) | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices | |
| US7723733B2 (en) | Roll-to-roll fabricated electronically active device | |
| US7476557B2 (en) | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices | |
| US7952107B2 (en) | Solid state light sheet and encapsulated bare die semiconductor circuits with electrical insulator | |
| US7294961B2 (en) | Photo-radiation source provided with emissive particles dispersed in a charge-transport matrix | |
| US7217956B2 (en) | Light active sheet material | |
| CN103681486B (en) | A kind of manufacturing method of flexible display substrates | |
| US7052924B2 (en) | Light active sheet and methods for making the same | |
| CN107369647A (en) | A kind of LED array substrate and preparation method thereof, display device | |
| CN109494292A (en) | A kind of micro-led lamp plate, its production method and display device | |
| CN110335844A (en) | A Micro LED mass transfer device and method based on selective heating and demagnetization | |
| CN107093680A (en) | Metal auxiliary electrode and the manufacture method using its display device | |
| CN109494216A (en) | The miniature light-emitting diode display of stacked structure | |
| JP2022543329A (en) | Mass transfer method and system for micro light emitting diode | |
| CN109449146A (en) | The preparation method of the miniature light-emitting diode display of stacked structure | |
| CN110112170B (en) | Microchip transferring equipment and transferring method | |
| CN109300966A (en) | Display panel and preparation method thereof and display device | |
| CN110289234A (en) | Mass transfer method for light emitting unit, array substrate and display device | |
| CN210245498U (en) | Microchip transfer equipment | |
| KR102601032B1 (en) | A method for micro led assembly | |
| CN114361145A (en) | Display panel, manufacturing method thereof and display device | |
| CN116154092A (en) | A programmable magnetron fluid microdisplay device and its preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190809 |