CN113917688A

CN113917688A - wearable display device

Info

Publication number: CN113917688A
Application number: CN202010661380.9A
Authority: CN
Inventors: 莫皓然; 薛达伟; 陈昱慈; 郑守成; 黄启峰; 韩永隆; 林宗义; 李伟铭; 谢锦文
Original assignee: Microjet Technology Co Ltd
Current assignee: Microjet Technology Co Ltd
Priority date: 2020-07-10
Filing date: 2020-07-10
Publication date: 2022-01-11

Abstract

A wearable display device includes a device body and a driving module. A device body has a mirror frame, two mirror legs and at least one display. Two mirror legs are respectively connected to two ends of the mirror frame, and two monitors are installed on the mirror frame. The driving module is arranged in the mirror frame and includes a microprocessor, an optical display module and a heat dissipation module. The optical display module is electrically connected to the microprocessor and displays the optical image on at least one display. The heat dissipation group includes a heat dissipation base and two heat pipes. The two heat pipes are arranged on the heat sink, and the heat sink is adjacent to the microprocessor. The heat energy generated when the microprocessor operates is conducted to the heat sink, and the heat sink is exchanged for heat through the two heat pipes.

Description

Wearable display device

[ technical field ] A method for producing a semiconductor device

The present disclosure relates to a wearable display device, and more particularly, to a head-mounted device having a heat dissipation assembly with excellent heat dissipation effect.

[ background of the invention ]

In recent years, with the rapid development of scientific and technological life, the specifications, equipment and functions of the surroundings related to the virtual reality are rapidly upgraded, and in order to meet the needs, the capability of the processing chip inside the wearable display device must be greatly improved, but if the heat energy generated by the processing chip during high-speed operation cannot be quickly removed, the performance of the wearable display device will be greatly affected, and how to provide a wearable display device that improves the above problems is the main subject to be solved by the present invention.

[ summary of the invention ]

The main objective of the present disclosure is to provide a wearable display device, which utilizes a heat dissipation assembly with fast heat dissipation to reduce the operating temperature of the wearable display device during operation.

One broad aspect of the present disclosure is a wearable display device, comprising: the device body is provided with a mirror bracket, two mirror legs and at least one display, the two mirror legs are respectively connected with two ends of the mirror bracket, and the two displays are arranged on the mirror bracket; a driving module, set up in this mirror holder of this device body, include: a microprocessor; an optical display module electrically connected with the microprocessor and used for displaying the optical image on the at least one display; and a heat dissipation group, which comprises a heat dissipation seat and two heat conduction pipes, wherein the two heat conduction pipes are arranged on the heat dissipation seat, the heat dissipation seat is close to the microprocessor, the heat energy generated when the microprocessor operates is conducted to the heat dissipation seat, and the two heat conduction pipes carry out heat exchange on the heat dissipation seat.

[ description of the drawings ]

Fig. 1 is a schematic structural view of the wearable display device.

Fig. 2 is a schematic cross-sectional structure diagram of a driving module of the wearable display device.

Fig. 3 is a schematic cross-sectional view of a condensing chip of the wearable display device.

Fig. 4A is a schematic cross-sectional view of a mems blower with a wearable display device.

Fig. 4B to 4C are schematic operation diagrams of the micro-electromechanical blower shown in fig. 4A.

Fig. 5A is a schematic cross-sectional structure diagram of the mems pump of the display device.

Fig. 5B to 5C are schematic operation diagrams of the mems pump shown in fig. 5A.

[ notation ] to show

100: wearable display device

1: device body

11: spectacle frame

12: glasses leg

13: display device

2: drive module

21: microprocessor

22: optical display set

23: heat radiation set

231: heat radiation seat

232: heat conduction pipe

233: heat dissipating liquid

234: liquid pump

235: condensation chip

235 a: refrigeration unit

235 b: condensation conduction piece

235 c: heat dissipation conduction piece

236: micro pump

3: micro-electromechanical blower

31: air outlet base

311: air outlet chamber

312: compression chamber

313: through hole

32: first oxide layer

33: jet resonance layer

331: air inlet hole

332: gas injection hole

333: suspension section

34: second oxide layer

341: resonant cavity section

35: resonant cavity layer

351: resonant cavity

36: first piezoelectric component

361: a first lower electrode layer

362: first piezoelectric layer

363: a first insulating layer

364: a first upper electrode layer

4: MEMS pump

41: air inlet base

411: air intake

42: third oxide layer

421: confluence channel

422: confluence chamber

43: resonant layer

431: center hole

432: vibrating section

433: fixing segment

44: a fourth oxide layer

441: compression chamber segment

45: vibration layer

451: actuating section

452: outer rim section

453: air hole

46: second piezoelectric element

461: a second lower electrode layer

462: second piezoelectric layer

463: a second insulating layer

464: second upper electrode layer

[ detailed description ] embodiments

Embodiments that embody the features and advantages of this disclosure will be described in detail in the description that follows. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.

As shown in fig. 1, the present disclosure provides a wearable display device 100, including: the display device comprises a device body 1 and a driving module 2, wherein the device body 1 is provided with a mirror bracket 11, two mirror legs 12 and at least one display 13, the two mirror legs 12 are respectively connected to two ends of the mirror bracket 11, the displays 13 are two displays 13 in the embodiment and are respectively arranged on the mirror bracket 11, and the driving module 2 is arranged in the mirror bracket 11 of the device body 1 and corresponds to the two displays 13; the user wears the wearable display device 100 through the temple 12, positions the two displays 13 in front of the eyes of the user, respectively, and the driving module 2 is adjacent to the displays 13, and displays VR (Virtual Reality), AR (Augmented Reality), MR (Mixed Reality), or XR (Extended Reality) on the displays 13 for the user to view.

Referring to fig. 2, the driving module 2 includes a microprocessor 21, an optical display unit 22 and a heat dissipation unit 23, the optical display unit 22 is electrically connected to the microprocessor 21, and the optical display unit 22 receives signals from the microprocessor 21 and provides optical components for displaying images such as VR (virtual reality), AR (augmented reality), MR (mixed reality), XR (augmented reality), etc. on the display 13. The heat dissipation assembly 23 includes a heat sink 231 and two heat pipes 232. The two heat pipes 232 are respectively disposed on the heat sink 231 and extend outward from two sides of the heat sink 231. The heat sink 231 is closely adjacent to the microprocessor 21, so that the heat generated by the microprocessor 21 is conducted to the heat sink 231, and the two heat pipes 232 exchange heat with the heat sink 231, thereby reducing the operating temperature of the microprocessor 21.

Referring to fig. 2, the two heat pipes 232 are respectively provided with a heat dissipating fluid 233 therein, and the heat dissipating fluid 233 flows to increase the heat transfer rate and enhance the heat dissipating effect. In the present embodiment, the heat dissipation assembly 23 further includes two liquid pumps 234, and the two liquid pumps 234 are respectively connected to the two heat pipes 232. The operation of the liquid pump 234 increases the flow rate of the heat-dissipating liquid 233, thereby accelerating the heat exchange action of the heat pipe 232.

Referring to fig. 2 and 3, the heat dissipation assembly 23 further includes a plurality of condensing chips 235 respectively connected to the two heat pipes 232, wherein the condensing chips 235 include a refrigeration unit 235a, a condensing conductor 235b and a heat dissipation conductor 235c, and the refrigeration unit 235a is sandwiched between the condensing conductor 235b and the heat dissipation conductor 235c and is packaged together to form the condensing chips 235. The condensing conductor 235b of the condensing chip 235 is connected to the outer surface of the heat pipe 232 for performing heat exchange on the heat pipe 232 to reduce the temperature of the heat pipe 232 and the heat dissipating liquid 233, and the heat source is dissipated by the heat dissipating conductor 235c to achieve the effect of temperature reduction.

As mentioned above, the heat dissipation assembly 23 further includes a micro pump 236, the micro pump 236 is disposed at a position corresponding to the microprocessor 21, and the micro pump 236 is a gas pump, and the gas is rapidly and continuously guided to flow through the surface of the microprocessor 21, so that the gas flow exchanges heat with the microprocessor 21, thereby improving the cooling effect.

In a first embodiment of the micro-pump 236 shown in fig. 4A-4C, the micro-pump 236 may be a micro-electromechanical blower 3 comprising: an air outlet base 31, a first oxidation layer 32, an air injection resonance layer 33, a second oxidation layer 34, a resonance cavity layer 35 and a first piezoelectric element 36 are all manufactured by semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.

The gas outlet base 31 is manufactured by a silicon substrate etching process to form a gas outlet chamber 311 and a compression chamber 312, and a through hole 313 is etched between the gas outlet chamber 311 and the compression chamber 312; the first oxide layer 32 is formed by deposition process and is stacked on the gas outlet base 31, and is etched and removed corresponding to the portion of the compression chamber 312; the aforementioned jet resonance layer 33 is formed by a silicon substrate deposition process and is superimposed on the first oxide layer 32, and forms a plurality of air inlet holes 331 by partially etching and removing corresponding to the compression chamber 312, and forms a jet hole 332 by partially etching and removing corresponding to the center of the compression chamber 312, so as to form a suspension section 333 capable of moving and vibrating between the air inlet holes 331 and the jet hole 332; the second oxide layer 34 is deposited on the suspension section 333 of the jet resonance layer 33, and is partially etched away to form a resonance cavity section 341, which is connected to the jet hole 332; the resonant cavity layer 35 is formed by a silicon substrate etching process to form a resonant cavity 351, and is correspondingly bonded and overlapped on the second oxide layer 34, so that the resonant cavity 351 corresponds to the resonant cavity section 341 of the second oxide layer 34; the first piezoelectric element 36 is formed by a deposition process to be superimposed on the resonant cavity layer 35, and includes a first lower electrode layer 361, a first piezoelectric layer 362, a first insulating layer 363, and a first upper electrode layer 364, wherein the first lower electrode layer 361 is formed by a deposition process to be superimposed on the resonant cavity layer 35, the first piezoelectric layer 362 is formed by a deposition process to be superimposed on a portion of the surface of the first lower electrode layer 361, the first insulating layer 363 is formed by a deposition process to be superimposed on a portion of the surface of the first piezoelectric layer 362, and the first upper electrode layer 364 is formed by a deposition process to be superimposed on the surface of the first insulating layer 363 and the surface of the first piezoelectric layer 362 without the first insulating layer 363, so as to be electrically connected to the first piezoelectric layer 362.

As shown in fig. 4B to 4C, the first piezoelectric element 36 is driven to drive the gas injection resonance layer 33 to resonate, so that the suspension section 333 of the gas injection resonance layer 33 generates reciprocating vibration displacement, so as to attract gas to enter the compression chamber 312 through the plurality of gas inlet holes 331, and then to be reintroduced into the resonance chamber 351 through the gas injection holes 332, and by controlling the vibration frequency of the gas in the resonance chamber 351 to be approximately the same as the vibration frequency of the suspension section 333, the resonance chamber 351 and the suspension section 333 can generate a Helmholtz resonance effect (Helmholtz resonance), and then the concentrated gas exhausted from the resonance chamber 351 is introduced into the compression chamber 312, and passes through the through holes 313 to be exhausted from the gas outlet chamber 311 at high pressure, so as to achieve high-pressure gas transmission and improve gas transmission efficiency.

In a second embodiment of the micro-pump 236 shown in fig. 5A to 5C, the micro-pump 236 may be a micro-electromechanical pump 4, as shown in fig. 5A, 5B to 5C, the micro-electromechanical pump 4 includes an air inlet base 41, a third oxide layer 42, a resonant layer 43, a fourth oxide layer 44, a vibrating layer 45 and a second piezoelectric element 46, all fabricated by a semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.

The gas inlet base 41 is fabricated by a silicon substrate etching process to form at least one gas inlet hole 411; the third oxide layer 42 is formed by a deposition process and stacked on the inlet base 41, and a plurality of converging channels 421 and a converging chamber 422 are formed by an etching process, wherein the converging channels 421 are communicated between the converging chamber 422 and the inlet holes 411 of the inlet base 41; the resonant layer 43 is formed by a silicon substrate deposition process and stacked on the third oxide layer 42, and an etching process is performed to form a central through hole 431, a vibration section 432 and a fixed section 433, wherein the central through hole 431 is formed at the center of the resonant layer 43, the vibration section 432 is formed at the peripheral region of the central through hole 431, and the fixed section 433 is formed at the peripheral region of the resonant layer 43; the fourth oxide layer 44 is formed by deposition process and is overlapped on the resonant layer 43, and is partially etched to form a compression cavity section 441; the vibration layer 45 is formed by a silicon substrate deposition process to be superimposed on the fourth oxide layer 44, and an actuating section 451, a rim section 452 and a plurality of air holes 453 are formed by an etching process, wherein the actuating section 451 is formed at the central portion, the rim section 452 is formed to surround the periphery of the actuating section 451, the plurality of air holes 453 are respectively formed between the actuating section 451 and the rim section 452, and the vibration layer 45 and the compression cavity section 441 of the fourth oxide layer 44 define a chamber; the second piezoelectric element 46 is formed by a deposition process to be stacked on the actuating section 451 of the vibrating layer 45, and includes a second lower electrode layer 461, a second piezoelectric layer 462, a second insulating layer 463 and a second upper electrode layer 464, wherein the second lower electrode layer 461 is formed by a deposition process to be stacked on the actuating section 451 of the vibrating layer 45, the second piezoelectric layer 462 is formed by a deposition process to be stacked on a portion of the surface of the second lower electrode layer 461, the second insulating layer 463 is formed by a deposition process to be stacked on a portion of the surface of the second piezoelectric layer 462, and the second upper electrode layer 464 is formed by a deposition process to be stacked on the surface of the second insulating layer 463 and the surface of the second piezoelectric layer 462 not provided with the second insulating layer 463, so as to be electrically connected to the second piezoelectric layer 462.

As shown in fig. 4B to 4C, the second piezoelectric element 46 is driven to drive the vibration layer 45 and the resonance layer 43 to generate resonance displacement, so that the introduced gas enters from the gas inlet 411, is collected into the collecting chamber 422 through the collecting channel 421, passes through the central through hole 431 of the resonance layer 43, and is discharged from the plurality of gas holes 453 of the vibration layer 45, thereby realizing a large flow rate of the gas.

In summary, the wearable display device provided by the present disclosure utilizes the heat dissipation assembly to perform the heat dissipation and cooling actions on the driving module, the two heat pipes in the heat dissipation assembly extend toward the two ends respectively, thereby increasing the heat dissipation area, increasing the heat conductivity through the heat dissipation liquid, accelerating the conduction of the heat dissipation liquid by the liquid pump, increasing the conduction speed, performing only heat exchange through the condensation chip, and guiding the gas by the micro pump, thereby having excellent heat dissipation effect and great industrial applicability and advancement.

Claims

1. A wearable display device, comprising:

a device body having a mirror frame, two mirror legs and at least one monitor, the two mirror legs are respectively connected to two ends of the mirror frame, and the two monitors are installed on the mirror frame; and

A drive module, disposed in the frame of the device body, includes:

a microprocessor;

an optical display module, electrically connected to the microprocessor, and displaying optical images on the at least one display respectively; and

A heat dissipation set includes a heat dissipation base and two heat pipes, the two heat pipes are arranged on the heat dissipation base, the heat dissipation base is adjacent to the microprocessor, and the heat energy generated by the microprocessor is conducted to the heat dissipation base, And the two heat pipes perform heat exchange on the heat sink.

2 . The wearable display device of claim 1 , wherein each of the two heat pipes has a heat dissipation liquid. 3 .

3 . The wearable display device according to claim 2 , wherein the heat dissipation group comprises two liquid pumps, and the two liquid pumps are respectively connected to the two heat pipes to accelerate the heat exchange effect of the two heat pipes. 4 .

4 . The wearable display device of claim 1 , wherein the heat dissipation group further comprises a micro-pump, and the micro-pump is disposed corresponding to the microprocessor. 5 .

5. The wearable display device according to claim 4, wherein the micropump is a microelectromechanical pump, comprising:

an air outlet base, an air outlet chamber and a compression chamber are formed by a silicon substrate etching process, and a through hole is etched between the air outlet chamber and the compression chamber;

A first oxide layer is formed and superposed on the gas outlet base by a deposition process, and the part of the compression chamber is etched and removed;

A jet resonance layer is formed and superimposed on the first oxide layer by a silicon substrate deposition process, and a part of the compression chamber is etched and removed to form a plurality of air inlet holes, and a central part of the compression chamber is etched and removed to form a jet a hole, so that a suspension section that can be displaced and vibrated is formed between the air intake hole and the air injection hole;

A second oxide layer is formed and superposed on the suspension section of the jet resonance layer by a deposition process, and is partially etched to form a resonance cavity section, which is communicated with the jet hole;

a resonant cavity layer, a resonant cavity is fabricated by a silicon substrate etching process, and the corresponding bonding is superimposed on the second oxide layer, so that the resonant cavity corresponds to the resonant cavity section of the second oxide layer;

A first piezoelectric element, formed and superposed on the resonant cavity layer by a deposition process, includes a first lower electrode layer, a first piezoelectric layer, a first insulating layer and a first upper electrode layer, wherein the first piezoelectric layer A lower electrode layer is formed and superposed on the resonant cavity layer by a deposition process, the first piezoelectric layer is formed by a deposition process and superimposed on a part of the surface of the first lower electrode layer, and the first insulating layer is formed by a deposition process and superimposed on the surface. Part of the surface of the first piezoelectric layer, the first upper electrode layer is formed by a deposition process and superimposed on the surface of the first insulating layer and the surface of the first piezoelectric layer without the first insulating layer. to be electrically connected with the first piezoelectric layer;

Wherein, by driving the first piezoelectric component to drive the jet resonance layer to resonate, the suspension section of the jet resonance layer is urged to reciprocately vibrate and displace, so as to attract a gas into the compression cavity through the plurality of air intake holes The gas is introduced into the resonant cavity through the gas injection hole, and then the gas is discharged from the resonant cavity and concentrated into the compression chamber, and passes through the through hole, and then is discharged from the gas outlet chamber to form a high pressure to realize the transmission flow of the gas. .

6. The wearable display device of claim 4, wherein the micro pump is a micro-electromechanical blower, comprising:

an air inlet base, at least one air inlet hole is formed by a silicon substrate etching process;

A third oxide layer is formed and superposed on the intake base by a deposition process, and a plurality of bus channels and a bus chamber are formed by an etching process, and a plurality of the bus channels are connected to the bus chamber and the intake base. between the air intake holes of the seat;

A resonance layer is formed and superposed on the third oxide layer by a silicon substrate deposition process, and a central through hole, a vibration section and a fixed section are formed by an etching process, wherein the central through hole is formed in the resonance layer the center of the vibrating section is formed in the peripheral area of the central through hole, and the fixed section is formed in the peripheral area of the resonance layer;

A fourth oxide layer is formed and superposed on the resonance layer by a deposition process, and is partially etched and removed to form a compression cavity segment;

A vibrating layer is formed and superposed on the fourth oxide layer by a silicon substrate deposition process, and an actuating segment, an outer edge segment and a plurality of air holes are formed by an etching process, wherein the actuating segment is formed at the center part, the outer edge section is formed around the periphery of the actuating section, a plurality of the air holes are respectively formed between the actuating section and the outer edge section, and the vibration layer and the fourth oxide layer are the compression chamber section defines a compression chamber; and

A second piezoelectric element, formed and superposed on the actuating section of the vibration layer by a deposition process, includes a second lower electrode layer, a second piezoelectric layer, a second insulating layer and a second upper electrode layer, wherein the second lower electrode layer is formed by a deposition process and superimposed on the actuating section of the vibration layer, the second piezoelectric layer is formed by a deposition process and superimposed on a part of the surface of the second lower electrode layer, the The second insulating layer is formed and superposed on a part of the surface of the second piezoelectric layer by a deposition process, the second upper electrode layer is formed by a deposition process and superposed on the surface of the second insulating layer, and the second piezoelectric layer is not provided with On the surface of the second insulating layer, it is used for electrical connection with the second piezoelectric layer;

Wherein, by driving the second piezoelectric component to drive the vibration layer and the resonance layer to generate resonance displacement, a gas is introduced into the air inlet through the air inlet, collected into the confluence chamber through the confluence channel, and passed through the vibration layer. The center is perforated, and then discharged from the plurality of air holes of the vibration layer to realize the transmission flow of the gas.

7 . The wearable display device of claim 1 , wherein the heat dissipation group further comprises a plurality of cooling chips, and the plurality of cooling chips are respectively connected to the two heat pipes. 8 .