CN113839294B - Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals - Google Patents
Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals Download PDFInfo
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- CN113839294B CN113839294B CN202111111706.1A CN202111111706A CN113839294B CN 113839294 B CN113839294 B CN 113839294B CN 202111111706 A CN202111111706 A CN 202111111706A CN 113839294 B CN113839294 B CN 113839294B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094076—Pulsed or modulated pumping
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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Abstract
The invention discloses a Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals, which comprises Nd: YVO 4 And Nd: gdVO 4 The device comprises a crystal, a pumping module, a Y-type laser resonant cavity, a heat sink temperature control module and an output module. The pumping module is modulated by a current pulse generator to emit pulse pumping light, and Nd: YVO 4 And Nd: gdVO 4 The crystal receives the pulse pumping light and is stimulated and amplified after passing through the Y-shaped laser resonant cavity to form synchronous pulse dual-wavelength laser, and the output module receives and outputs the synchronous pulse dual-wavelength laser adjusted by the Y-shaped laser resonant cavity, and Nd: YVO 4 And Nd: gdVO 4 The crystal is arranged on the heat sink temperature control module, and the frequency difference-tunable synchronous dual-wavelength pulse laser signal is realized by controlling the pump adjusting module and the heat sink adjusting module.
Description
Technical Field
The invention belongs to the technical field of dual-wavelength lasers and photo-generated terahertz waves, and relates to a Y-cavity tunable synchronous pulse dual-wavelength laser based on double crystals.
Background
The dual-wavelength laser has great potential in the aspects of generating coherent terahertz waves, medical diagnosis, laser radar and the like. Currently, researches on dual-wavelength lasers mainly focus on frequency difference tunability and generation of synchronous pulse signals, mainly because tunable dual-wavelength lasers can generate radio frequency or terahertz signals with continuous frequencies through optical beat frequencies, and synchronous pulse dual-wavelength lasers providing higher peak power density can achieve higher optical heterodyne beat frequency efficiency.
For example, in 2010 p.zhao, a synchronous dual wavelength laser pulse signal with a wavelength of 1047nm and 1053nm was realized by using one passive Q-switched crystal and one Nd: YLF crystal, with a frequency interval of 1.64THz (p.zhao, et al, compact and portable terahertz source by mixing two frequencies generated simultaneously by single solid-state laser, opt. Lett.35 (2010) 3979-3981). Such a laserThe device is easy to realize Q-switched pulse and difficult to realize frequency difference tuning mechanism, and moreover, the output power of the laser is unstable due to the gain competition effect in the laser. Y.Ke proposes a YVO based Nd 4 /Nd:GdVO 4 Pulse dual wavelength laser of combined crystal and tunable synchronous pulse dual wavelength laser signal with wavelength of 1063 and 1064nm is obtained (Y. Ke, et al A Tunable Synchronous Pulsed Dual-Wavelength Laser Based on the Nd: YVO 4 /Nd:GdVO 4 Combined Crystals Pair IEEE Photonics journal.13 (2021) 1-7). However, the spatial hole burning effect in the combined crystal still causes time jitter in the dual wavelength pulsed laser signal.
Disclosure of Invention
The dual-wavelength pulse laser signals generated in the same resonant cavity have gain competition and space hole burning effects, so that the pulse laser signals have poor power stability and insufficient time sequence jitter. The invention provides a Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals.
The technical scheme of the invention is as follows:
a Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals is characterized by comprising Nd: YVO 4 And Nd: gdVO 4 The device comprises a crystal, a first pumping module, a second pumping module, a laser resonant cavity, a heat sink temperature control module and an output module; the first pumping module and the second pumping module are used for emitting pulse pumping light, and the Nd: YVO 4 And Nd: gdVO 4 The crystal receives the pulse pumping light and is stimulated and amplified after passing through the laser resonant cavity to form synchronous pulse dual-wavelength laser, the output module receives and outputs the synchronous pulse dual-wavelength laser adjusted by the laser resonant cavity, and the Nd: YVO 4 And Nd: gdVO 4 The crystal is arranged at the heat sink temperature control module which is used for controlling Nd: YVO 4 And Nd: gdVO 4 The temperature of the crystal;
the first pumping module comprises a first current pulse generator, a first continuous pumping source, a first optical fiber, a first collimator, a first aspheric lens and a 45-degree reflecting mirror, wherein the first current pulse is sent outThe output end of the generator is connected to the input end of the first continuous pumping source, and the pulse pumping light output by the first continuous pumping source sequentially passes through the first optical fiber, the first collimator, the first aspheric lens and the first 45-degree reflecting mirror and then is converged to the Nd: YVO 4 On the crystal, the first current pulse generator is modulated to the first continuous pumping source for emitting pulse pumping light, and the 45-degree reflecting mirror is used for reflecting the pulse pumping light;
the second pumping module comprises a second current pulse generator, a second continuous pumping source, a second optical fiber, a second collimator and a second aspheric lens, wherein the output end of the second current pulse generator is connected to the input end of the second continuous pumping source, and the pulse pumping light output by the second continuous pumping source sequentially passes through the second optical fiber, the second collimator and the second aspheric lens and then is converged to the Nd: gdVO 4 The second current pulse generator is modulated to a second continuous pumping source on the crystal and used for emitting pulse pumping light;
the laser resonant cavity comprises a first input mirror, and Nd: YVO 4 Crystal, second input mirror, nd: gdVO 4 A crystal, a Brewster polarizer, and an output mirror, wherein the first input mirror is respectively connected with the Nd: YVO 4 The crystals are arranged relatively parallel; the second input mirror is respectively connected with the Nd-GdVO 4 The crystals are arranged relatively parallel; the Brewster polarizer is arranged in the laser resonant cavity and used for coupling two pulse lights;
the heat sink temperature control modules comprise a clamp holder, a base, a semiconductor refrigerating piece, a temperature control probe, a front end controller and a PC control end, wherein the clamp holder clamps Nd: YVO 4 And Nd: gdVO 4 A crystal; the base is arranged at the bottom of the clamp holder; the semiconductor refrigerating piece is arranged in the middle of the base; the temperature control probe is arranged at the base; the front end controller is electrically connected with the temperature control probe; the PC control end is electrically connected with the front-end controller; the temperature control probe is used for detecting the temperature of the crystal, the front end controller is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating piece, and the PC control end is used for settingDetermining temperature control temperature and checking real-time temperature of the crystal detected by the temperature control probe;
the output module comprises an output coupling mirror and a tail fiber, wherein the output coupling mirror is arranged relatively parallel to the output mirror, and the tail fiber is connected with the output coupling mirror.
Nd:YVO 4 And Nd: gdVO 4 The stimulated radiation wavelength of the crystal is respectively Nd: YVO 4 The crystal and Nd: gdVO4 crystal are within the emission spectrum (as shown in FIG. 1), so that Nd: YVO is at 20 DEG C 4 Stimulated radiation wavelength of crystal and Nd: gdVO 4 The stimulated radiation wavelength of the crystal differs by more than 1.2nm, and the theoretical frequency difference is more than 300GHz; on the other hand, YVO due to Nd 4 And Nd: gdVO 4 The crystal is controlled by the heat sink temperature control module, and when the temperature control temperature changes, nd: YVO 4 And Nd: gdVO 4 The relative temperature of the crystal changes, and the emission spectrum wavelength of the crystal changes, so that the frequency difference of the dual-wavelength laser signal changes correspondingly.
Further, the temperature regulation and control range of the front-end controller is-10 ℃ to 100 ℃, and the front-end controller and the heat sink module jointly form a controlled and adjustable temperature control system.
Further, the base is formed by splicing two regular quadrangular prisms made of aluminum alloy materials, one of the regular quadrangular prisms is solid, the other of the regular quadrangular prisms is internally provided with a U-shaped groove for realizing heat exchange, and a square groove is formed in the splicing center of the two regular quadrangular prisms and used for placing the semiconductor refrigerating piece.
Further, the laser resonant cavity is Y-shaped, and the Nd: gdVO 4 Crystal and Nd: YVO 4 The crystals were disposed at an angle of 67 °.
Further, the crystal is fixedly arranged on the base, the Brewster polarizer is arranged on the base, and the arrangement angle of the Brewster polarizer is adjustable.
Further, the Nd: YVO 4 Crystal and Nd GdVO 4 The two end faces of the crystal are plated with antireflection films, the first input mirror and the second input mirror are plane reflecting mirrors, and one side of the plane reflecting mirror, which is close to the crystal, is plated with a high levelThe output mirror is a plane mirror, and a part of the high-reflection film and the high-reflection film are plated on the mirror surface of one side of the plane mirror, which is close to the crystal.
Further, the Brewster polarizer is positioned near the Nd: YVO 4 One side of the crystal is plated with an antireflection film, which is close to the Nd: gdVO 4 One side of the crystal is plated with a pi-polarized beam having a high transmission (tp=98%) at 1064nm and a sigma-polarized beam having a high reflectivity (Rs) at 1064nm when placed at a brewster angle of 56.5 ° relative to the input beam>99.9%) of the membrane.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention adopts the Y-shaped cavity structure to overcome the influence of gain competition and space hole burning effect, so that the laser output power of the dual-wavelength laser is stable.
2. The invention can realize the stable synchronization of the dual-wavelength pulse laser signals by adjusting the period of the current pulse signal generator.
3. Nd: gdVO control by independently adjusting heat sink modules 4 Crystal and Nd YVO 4 The output wavelength of the crystal can realize the adjustment of the frequency difference of the dual-wavelength pulse laser signal.
Drawings
FIG. 1 shows Nd: YVO in the present invention 4 And Nd: gdVO 4 And (3) crystal emission spectrum.
Fig. 2 is a component structure diagram of a dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of laser signals output by a dual wavelength pulse laser in an embodiment of the present invention.
Detailed Description
The following are specific embodiments of the present invention and the technical solutions of the present invention will be further described with reference to the accompanying drawings, but the present invention is not limited to these embodiments.
Example 1
Referring to FIG. 2, a Y-cavity tunable synchronous pulse dual-wavelength laser based on double crystals comprises Nd: YVO 4 Crystal 8 and Nd: gdVO 4 The crystal 14, the pumping module, the laser resonant cavity, the heat sink temperature control module and the output module; the pumping module emits pulse pumping light, nd: YVO 4 Crystal 8 and Nd: gdVO 4 The crystal 14 receives the pumping light and is stimulated and amplified after passing through the laser resonant cavity to form synchronous pulse dual-wavelength laser, and the output module receives and outputs the synchronous pulse dual-wavelength laser adjusted by the laser resonant cavity; nd YVO 4 Crystal 8 and Nd: gdVO 4 The crystal 14 is disposed in a heat sink temperature control module for controlling Nd: YVO 4 Crystal 8 and Nd: gdVO 4 The temperature of the crystal 14.
The pumping module comprises a first current pulse generator 1 and a second current pulse generator 20, a first continuous pumping source 2 and a second continuous pumping source 19, a first optical fiber 3 and a second optical fiber 18, a first collimator 4 and a second collimator 17, a first aspheric lens 5 and a second aspheric lens 16 and a 45-degree reflecting mirror 6; the first pump source 2 sequentially passes through the first optical fiber 3, the first collimator 4, the first aspheric lens 5 and the 45-degree reflecting mirror 6 to converge on Nd:YVO 4 A crystal 8; the second pump source 19 sequentially passes through the second optical fiber 18, the second collimator 17 and the second aspheric lens 16 to converge on Nd: gdVO 4 A crystal 14;
the first current pulse generator 1 and the second current pulse generator 20 are waveform generators, and the first continuous pumping source 2 and the second continuous pumping source 19 are laser diodes with 808nm output center wavelength; the first optical fiber 3 and the second optical fiber 18 are multimode optical fibers, and the core diameter of the multimode optical fibers is 400 μm; the first collimator 4 and the second collimator 17 are plano-convex lenses, and the focal length is 30mm; the reflector 6 is a 45-degree plane reflector; the focal length of the first aspherical lens 5 and the second aspherical lens 16 is 38mm.
The laser resonant cavity is Y-shaped and comprises a first input mirror 7, a second input mirror 15 and Nd: YVO 4 Crystal 8 and Nd: gdVO 4 Crystal 14, brewster polarizer 10 and output mirror 26, nd:YVO 4 Crystal 8 and Nd: gdVO 4 The orthogonal placement of the c-axis of crystal 14 produces polarized beams in pi and sigma directions. The axial cross section size is 3mm multiplied by 3mm, all are cut on the a axis, nd: YVO 4 Crystal 8 and Nd: gdVO 4 Both end surfaces of the crystal 14 are plated with antireflection films (AR@808nm)&1064nm)。Nd:GdVO 4 Crystal bodyYVO with Nd 4 The crystals were disposed at an angle of 67 °. The first input mirror 7 and the second input mirror 15 are plane mirrors, and one side of the plane mirrors close to the crystal is plated with a high reflection film (hr@1064nm) and an antireflection film (ar@806 nm). The output mirror 26 is a planar mirror, and the mirror surface of the planar mirror near the crystal side is plated with a part of a highly reflective film (r=90% @1064 nm) and a highly reflective film (hr@806 nm). The brewster polarizer 10 is coated with an antireflection film (ar@1064nm) on the side near the crystal 8, and with a pi-polarized beam having a high transmittance at 1064nm (tp=98%) and a sigma-polarized beam having a high reflectance at 1064nm (Rs) when placed at a brewster angle (56.5 °) with respect to the input beam on the side near the crystal 14>99.9%) of the membrane. The Brewster polarizer 10 has dimensions 16mm 10mm 2mm and the material is Corning 7980.
Wherein YVO is due to Nd 4 And Nd: gdVO 4 The stimulated radiation wavelength of the crystal is respectively Nd: YVO 4 Crystal and Nd GdVO 4 Within the emission spectrum of the crystal (as shown in FIG. 1), so that Nd: YVO at 20 DEG C 4 Stimulated radiation wavelength of crystal and Nd: gdVO 4 The stimulated radiation wavelength of the crystal differs by more than 1.2nm, and the theoretical frequency difference is more than 300GHz; on the other hand, YVO due to Nd 4 And Nd: gdVO 4 The crystal is controlled by the heat sink temperature control module, and when the temperature control temperature changes, nd: YVO 4 And Nd: gdVO 4 The relative temperature of the crystal changes, and the emission spectrum wavelength of the crystal changes, so that the frequency difference of the dual-wavelength laser signal can be tuned.
The heat sink temperature control module comprises clamps 9 and 13, a base 11, a semiconductor refrigerating piece 12, a temperature control probe 21, a front end controller 23 and a PC control end 25, wherein the clamps 9 and 13 respectively clamp crystals 8 and 14; the base 11 is arranged at the bottom of the holders 9 and 13; the semiconductor refrigerating piece 12 is arranged in the middle of the base 11; the temperature control probe 21 is arranged on the base 11; the front end controller 23 is electrically connected with the temperature control probe 21; the PC control terminal 25 is electrically connected to the front-end controller 23. The temperature control probe 21 is used for detecting the temperature of the crystal, the front end controller 23 is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating element 12, and the PC control end 25 is used for setting the temperature control temperature and checking the real-time temperature of the crystal detected by the temperature control probe.
The holders 9 and 13 are metal holders made of aluminum alloy materials, and are formed by splicing an upper square prism and a lower square prism which are connected by screws, and a square groove with the length of 3.2mm multiplied by 3.2mm is arranged at the splicing center of the holders and is used for placing crystals wrapped by indium foil.
The semiconductor refrigerating piece 12 is a semiconductor refrigerating piece with the model TEC1-12703, and the maximum refrigerating power is 36W.
The base 11 is formed by splicing two regular quadrangular prisms made of aluminum alloy materials, wherein one of the regular quadrangular prisms is solid, the other regular quadrangular prism is internally provided with a U-shaped groove, a water outlet and a water inlet are arranged for realizing heat exchange, and a square groove with the length of 31mm multiplied by 1.6mm is arranged in the splicing center for placing the semiconductor refrigerating piece 12. The purpose of the base is to fix the holders 9 and 13, the brewster polarizer 10, the semiconductor refrigerating element 12, and to improve the stability of the temperature control during the completion of the heat exchange.
The front-end controller 23 is a model TCB-NA semiconductor refrigeration sheet temperature control board, which is based on PID control algorithm to realize temperature regulation and control of-10 ℃ to 100 ℃.
The temperature control probe 21 is a thermistor (NTC) having a resistance value of 10kΩ, and a B value of 3950 (B value is a parameter describing the physical characteristics of the thermistor material, i.e., a thermal sensitivity index, the larger the B value, the higher the sensitivity of the thermistor).
The PC control terminal 25 is a computer with serial port debugging software installed. The PC control end 25 is electrically connected with the front-end controller 23 through a data line 24, and the data line 24 is a USB-RS-232 serial port line.
The front end controller 23 is electrically connected with the temperature control probe 21 through a wire 22, and the wire 22 is a double-core copper wire.
The output module comprises an output coupling mirror 27 and a tail fiber 28, wherein the output coupling mirror 27 is arranged in parallel with the output mirror 26, and the tail fiber 28 is connected with the output coupling mirror 27. The output coupling mirror 27 is used to improve the coupling efficiency of the dual wavelength laser and to improve the output power. The pigtail 28 is a multimode optical fiber with a core diameter of 400 μm; the output coupling mirror 27 is an aspherical lens, and its coupling efficiency can be as high as 85%.
The temperature regulation range of the front-end controller 23 is-10 ℃ to 100 ℃, and the front-end controller and the heat sink module jointly form a temperature control system.
In addition, the synchronous pulse dual-wavelength laser disclosed in this embodiment also needs auxiliary devices such as a lens bracket and a screw to stabilize the whole laser device and keep the central height of the optical path consistent, and then the pulse dual-wavelength laser signal is smoothly output by adjusting the working parameters such as the positions and angles of the input mirror, the brewster polarizer and the reflecting mirror. Finally, the dual-wavelength laser in this embodiment can realize the output of synchronous pulse dual-wavelength laser with center wavelength of 1060nm and tunable frequency difference, and when the period of the current pulse generator is set to 9 μs, the amplitude is 5V, and the output power of continuous pumping is 3.8W, the synchronous pulse laser signal of the dual-wavelength laser is shown in fig. 3.
The dual-wavelength laser with the Y-shaped cavity tunable synchronous pulse based on the double crystals provided in the embodiment has the following working principle: firstly, controlling the inversion particle number in a laser resonant cavity to be below a threshold value by controlling a continuous pumping source, and then superposing pulse pumping by a current pulse generator to enable the inversion particle number in the resonant cavity to exceed the threshold value instantaneously to trigger Nd: YVO 4 Crystal and Nd GdVO 4 The laser pulse is generated by the stimulated radiation of the crystal, and then the synchronization of the dual-wavelength pulse laser signals can be realized by adjusting the period of the current pulse generator. Nd: YVO by adjusting the temperature of the heat sink module 4 And Nd: gdVO 4 The output wavelength of the crystal can be changed along with the change of temperature, so that the frequency difference is tunable. The Y-shaped laser resonant cavity is utilized to overcome the effects of gain competition and space hole burning, so that the stability of the synchronous pulse dual-wavelength laser is ensured, and finally, the stable frequency difference tunable synchronous pulse dual-wavelength laser output is obtained.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (7)
1. A Y-shaped cavity tunable synchronous pulse dual-wavelength laser based on double crystals is characterized by comprising Nd: YVO 4 And Nd: gdVO 4 The device comprises a crystal, a first pumping module, a second pumping module, a laser resonant cavity, a heat sink temperature control module and an output module; the first pumping module and the second pumping module are used for emitting pulse pumping light, and the Nd: YVO 4 And Nd: gdVO 4 The crystal receives the pulse pumping light and is stimulated and amplified after passing through the laser resonant cavity to form synchronous pulse dual-wavelength laser, the output module receives and outputs the synchronous pulse dual-wavelength laser adjusted by the laser resonant cavity, and the Nd: YVO 4 And Nd: gdVO 4 The crystal is arranged at the heat sink temperature control module which is used for controlling Nd: YVO 4 And Nd: gdVO 4 The temperature of the crystal;
the first pumping module comprises a first current pulse generator, a first continuous pumping source, a first optical fiber, a first collimator, a first aspheric lens and a 45-degree reflecting mirror, wherein the output end of the first current pulse generator is connected to the input end of the first continuous pumping source, and pulse pumping light output by the first continuous pumping source sequentially passes through the first optical fiber, the first collimator, the first aspheric lens and the first 45-degree reflecting mirror and then is converged to Nd: YVO 4 On the crystal, the first current pulse generator is modulated to the first continuous pumping source for emitting pulse pumping light, and the 45-degree reflecting mirror is used for reflecting the pulse pumping light;
the second pumping module comprises a second current pulse generator, a second continuous pumping source, a second optical fiber, a second collimator and a second aspheric lens, wherein the output end of the second current pulse generator is connected to the input end of the second continuous pumping source, and the pulse pumping light output by the second continuous pumping source sequentially passes through the second optical fiber, the second collimator and the second aspheric lens and then is converged to the Nd: gdVO 4 The second current pulse generator is modulated to a second continuous pumping source on the crystal and used for emitting pulse pumping light;
the saidThe laser resonant cavity comprises a first input mirror and Nd: YVO 4 Crystal, second input mirror, nd: gdVO 4 A crystal, a Brewster polarizer, and an output mirror, wherein the first input mirror is respectively connected with the Nd: YVO 4 The crystals are arranged relatively parallel; the second input mirror is respectively connected with the Nd-GdVO 4 The crystals are arranged relatively parallel; the Brewster polarizer is arranged in the laser resonant cavity and used for coupling two pulse lights;
the heat sink temperature control modules comprise a clamp holder, a base, a semiconductor refrigerating piece, a temperature control probe, a front end controller and a PC control end, wherein the clamp holder clamps Nd: YVO 4 And Nd: gdVO 4 A crystal; the base is arranged at the bottom of the clamp holder; the semiconductor refrigerating piece is arranged in the middle of the base; the temperature control probe is arranged at the base; the front end controller is electrically connected with the temperature control probe; the PC control end is electrically connected with the front-end controller; the temperature control probe is used for detecting the temperature of the crystal, the front-end controller is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating piece, and the PC control end is used for setting the temperature control temperature and checking the real-time temperature of the crystal detected by the temperature control probe;
the output module comprises an output coupling mirror and a tail fiber, wherein the output coupling mirror is arranged relatively parallel to the output mirror, and the tail fiber is connected with the output coupling mirror.
2. The dual crystal-based Y-cavity tunable synchronous pulse dual wavelength laser of claim 1, wherein the front-end controller has a temperature regulation range of-10 ℃ to 100 ℃, and the front-end controller and the heat sink temperature control module together form a controlled and adjustable temperature control system.
3. The dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser device of claim 1, wherein the base is formed by splicing two regular quadrangular prisms made of aluminum alloy materials, one of the regular quadrangular prisms is solid, the other is internally provided with a U-shaped groove for realizing heat exchange, and a square groove is arranged at the splicing center of the two regular quadrangular prisms for placing the semiconductor refrigerating piece.
4. The dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser of claim 1, wherein said laser resonator is "Y" shaped and said Nd: gdVO 4 Crystal and Nd: YVO 4 The crystals were disposed at an angle of 67 °.
5. The dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser according to claim 1, wherein said Nd: YVO 4 Crystal and Nd GdVO 4 The crystal is fixedly placed on the base, the Brewster polarizer is placed on the base, and the placement angle of the Brewster polarizer is adjustable.
6. The dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser according to claim 1, wherein said Nd: YVO 4 Crystal and Nd GdVO 4 The two end faces of the crystal are plated with antireflection films, the first input mirror and the second input mirror are plane reflecting mirrors, one side of the plane reflecting mirror, which is close to the crystal, is plated with a high reflecting film and an antireflection film, the output mirror is a plane reflecting mirror, and the mirror surface of the plane reflecting mirror, which is close to one side of the crystal, is plated with a part of the high reflecting film and the high reflecting film.
7. A dual crystal-based Y-cavity tunable synchronous pulse dual wavelength laser according to claim 1, wherein said brewster polarizer is positioned adjacent to said nd:yvo 4 One side of the crystal is plated with an antireflection film, which is close to the Nd: gdVO 4 One side of the crystal is plated with a pi-polarized beam having a high transmittance tp=98% at 1064nm and a sigma-polarized beam having a high reflectance Rs at 1064nm when placed at a brewster angle of 56.5 ° relative to the input beam>99.9% film.
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| CN101572379A (en) * | 2009-05-19 | 2009-11-04 | 北京国科世纪激光技术有限公司 | Three-band pulsing laser |
| CN109586153A (en) * | 2019-01-02 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Neodymium-doped lithium fluoride yttrium nanosecond pulse blue laser |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101572379A (en) * | 2009-05-19 | 2009-11-04 | 北京国科世纪激光技术有限公司 | Three-band pulsing laser |
| CN109586153A (en) * | 2019-01-02 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Neodymium-doped lithium fluoride yttrium nanosecond pulse blue laser |
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