CN113838816A - A kind of preparation method of gallium nitride-based diode device with diamond passivation layer - Google Patents
A kind of preparation method of gallium nitride-based diode device with diamond passivation layer Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 198
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 176
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 98
- 239000010432 diamond Substances 0.000 title claims abstract description 98
- 238000002161 passivation Methods 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 226
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 230000007704 transition Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 11
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- 238000005516 engineering process Methods 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000000427 thin-film deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
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- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002113 nanodiamond Substances 0.000 description 2
- 235000021251 pulses Nutrition 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 230000010287 polarization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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Abstract
本发明公开了一种具有金刚石钝化层的氮化镓基二极管器件的制备方法，包括以下步骤：首先将非掺杂本征氮化镓晶片与金刚石衬底结合，并在本征氮化镓晶片正面依次外延生长n型氮化镓层和过渡介质层；然后对过渡介质层进行处理形成图形化的n型氮化镓层凹形台面；接着在露出的n型氮化镓层表面依次外延生长本征氮化镓层或量子阱层结构、p型氮化镓层、介质保护层和金刚石钝化层；最后通过光刻、显影、刻蚀、薄膜沉积等工艺在p型氮化镓层和n型氮化镓层上形成p型和n型金属电极，从而得到具有金刚石衬底和钝化层的氮化镓基二极管。所得产品满足氮化镓基高频高功率器件的高散热需求，同时降低了氮化镓基探测器器件的表面漏电流和抗辐射性。
The invention discloses a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following steps: firstly, a non-doped intrinsic gallium nitride wafer is combined with a diamond substrate; The n-type gallium nitride layer and the transition medium layer are epitaxially grown on the front side of the wafer in turn; then the transition medium layer is processed to form a patterned concave mesa of the n-type gallium nitride layer; then epitaxy is sequentially performed on the surface of the exposed n-type gallium nitride layer Growth of intrinsic gallium nitride layer or quantum well layer structure, p-type gallium nitride layer, dielectric protective layer and diamond passivation layer; finally through photolithography, development, etching, thin film deposition and other processes on the p-type gallium nitride layer p-type and n-type metal electrodes are formed on the n-type gallium nitride layer, thereby obtaining a gallium nitride-based diode with a diamond substrate and a passivation layer. The obtained product meets the high heat dissipation requirements of gallium nitride-based high-frequency and high-power devices, and simultaneously reduces the surface leakage current and radiation resistance of gallium nitride-based detector devices.
Description
Technical Field
The invention relates to a preparation method of a gallium nitride-based diode device with a diamond passivation layer, belonging to the technical field of electronic materials and devices.
Background
The wide-bandgap GaN-based semiconductor material has excellent properties such as high saturated electron mobility, high breakdown field strength, good physical and chemical stability, strong spontaneous polarization effect and the like, is the first choice in third-generation semiconductor materials, and is widely applied to microelectronic materials and devices such as pn junction diodes and the like, such as power diodes, light emitting diodes, laser diodes, heterojunction transistors and the like. However, in the application process of the gan-based diode device, the electrical performance and reliability of the device are often reduced due to the limitation of the device structure design and manufacture, the defects of the gan material surface interface, and the like, which affects the performance of the high-frequency, high-temperature, and high-power application performance of the device.
Currently, the commonly used epitaxial substrate of gallium nitride-based device mainly comprises materials such as silicon carbide, sapphire and silicon, etc., in the Chinese patent "a GaN-based material light-emitting diode with epitaxial structure and a preparation method thereof" (CN 201010622204.0), the sapphire substrate is exposed through a patterned substrate technology and an epitaxial technology, so that the light-emitting efficiency is improved, but the method is used in a high-power light-emitting device due to the sapphire substrateThe low thermal conductivity of the stone substrate is significantly limited, affecting its luminous efficiency. Diamond is the highest thermal conductivity material (up to 2200 W.m)-1·K-1) In the "preparation method of a novel diamond film/GaN heterojunction with electrode" of chinese patent CN201610479524.2, a simple preparation method of p-type nano-diamond film/n-type GaN heterojunction is disclosed, which has good rectification characteristic, however, the method is to directly grow nano-diamond film on gallium nitride substrate, high temperature plasma in the growth process can not only destroy the gallium nitride wafer substrate, but also the diamond film and gallium nitride have lower interface bonding strength, which affects the electrical performance of the heterojunction device. In addition, the surface passivation layer structure has obvious improvement effect on two-dimensional electron gas and surface leakage current of the gallium nitride-based device. Therefore, the development of the gallium nitride-based diode with the diamond substrate and the passivation layer has important significance for reducing the interface thermal resistance of the gallium nitride-based device and improving the application and reliability of the photoelectric device of the gallium nitride-based device.
Disclosure of Invention
The invention aims to provide a gallium nitride-based diode device with a diamond passivation layer and a preparation method thereof, which utilize the characteristics of high thermal conductivity, high hardness and wear resistance, high chemical stability, rough growth surface structure and the like of diamond, and improve the heat dissipation effect and surface state characteristics of a gallium nitride-based power device by designing and optimizing the structures of a diamond substrate, the passivation layer and a gallium nitride semiconductor, thereby obtaining a high-quality gallium nitride-based diode with the diamond substrate and the passivation layer.
The invention utilizes the characteristics of high heat-conducting property, high hardness and wear resistance, good chemical stability, rough growth surface structure and the like of the diamond material on the basis of keeping the structure and the performance of the gallium nitride-based diode, the structure and the composition of the diamond substrate, the passivation layer, the middle dielectric layer and the functional layer (intrinsic semiconductor layer or quantum well layer) are designed and optimized in the gallium nitride-based device, so that the interface thermal resistance can be reduced, the heat dissipation effect of the gallium nitride-based high-power device can be improved, moreover, the introduction of the diamond passivation layer is beneficial to reducing the defect dislocation on the surface or in the interface of the p-type gallium nitride layer, improving the surface state characteristic of the p-type gallium nitride layer, reducing the surface leakage current and the radiation resistance of the gallium nitride-based diode serving as a detector device, meanwhile, the method plays a role in wear-resistant and corrosion-resistant protection for the gallium nitride-based device, so the method has important significance in improving the service performance and application and popularization of the gallium nitride-based diode device.
The invention provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the steps of combining the back surface of an undoped intrinsic gallium nitride wafer with a diamond substrate, and sequentially epitaxially growing an n-type gallium nitride layer and a transition dielectric layer on the front surface of the intrinsic gallium nitride wafer; carrying out photoetching, developing, corrosion and other processes on the transition dielectric layer to form a concave mesa of the patterned n-type gallium nitride layer; sequentially epitaxially growing an intrinsic gallium nitride layer or quantum well layer structure, a p-type gallium nitride layer, a dielectric protection layer and a diamond passivation layer on the surface of the n-type gallium nitride layer; and forming p-type and n-type metal electrodes on the p-type gallium nitride layer and the n-type gallium nitride layer respectively to obtain the gallium nitride-based diode with the diamond substrate and the passivation layer.
The preparation method of the gallium nitride-based diode device with the diamond passivation layer specifically comprises the following steps:
(1) combining the back surface of the non-doped intrinsic gallium nitride wafer with a diamond substrate to obtain the intrinsic gallium nitride wafer taking diamond as the substrate;
(2) doping an epitaxial growth n-type gallium nitride layer on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a metal organic chemical vapor deposition technology;
(3) depositing a transition medium layer on the surface of the n-type gallium nitride layer by using the technologies of plasma enhanced chemical vapor deposition, electron beam evaporation, pulse laser melting and the like;
(4) carrying out conventional photoetching, developing, wet etching or dry etching and other processes on the transition dielectric layer in sequence to form a graphical n-type gallium nitride layer table top;
(5) sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure and a p-type gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a metal organic chemical vapor deposition technology;
(6) removing the residual transition dielectric layer, and sequentially depositing a dielectric protection layer and a diamond passivation layer on the surface of the p-type gallium nitride layer from bottom to top;
(7) forming p-type and n-type electrode regions on the p-type gallium nitride layer and the n-type gallium nitride layer sequentially through conventional photoetching, developing, wet etching or dry etching and other processes;
(8) and depositing a metal multilayer film in the p-type and n-type electrode areas by adopting the technologies of electron beam evaporation, magnetron sputtering and the like, stripping the p-type and n-type metal electrodes, and finally carrying out protective atmosphere annealing treatment on the metal electrodes to obtain the gallium nitride-based diode device with the diamond substrate and the passivation layer.
In the above preparation method, in the step (1), the bonding manner of gallium nitride and diamond includes bonding, heteroepitaxial growth, etc., the gallium nitride wafer includes a self-supporting gallium nitride wafer or a sapphire-based gallium nitride thick film wafer, and the diamond substrate includes a diamond self-supporting polycrystalline film or a diamond single crystal wafer;
in the preparation method, in the step (2), the doping element is phosphorus or silicon, the thickness of the n-type gallium nitride layer is 2-20 mu m, and the electron concentration is 1018~1021 cm-3；
In the preparation method, in the step (3), the transition dielectric layer film comprises an etching mask layer with a single-layer or multi-layer structure, such as silicon oxide, silicon nitride, nickel and the like, and the thickness is 100-800 nm;
in the preparation method, in the step (4), the circular or square top surface of the middle part of the n-type gallium nitride layer is exposed after the transition medium layer is corroded;
in the preparation method, in the step (5), the thickness of the intrinsic gallium nitride layer is 5-20 μm, and the thickness of the quantum well layer is 10-100 nm; the p-type gallium nitride layer is doped with magnesium, has a thickness of 200-800 nm and a hole concentration of 1015~1018 cm-3；
In the preparation method, in the step (6), the dielectric protective layer comprises one of silicon nitride, silicon oxide, silicon oxynitride and an aluminum nitride film, and the preparation method comprises plasma enhanced chemical vapor deposition, electron beam evaporation, laser melting evaporation or magnetron sputtering technology; the preparation method of the diamond passivation layer comprises the microwave plasma chemical vapor deposition or hot wire chemical vapor deposition technology; the protective thickness of the dielectric layer is 50-500 nm, and the thickness of the diamond layer is 200-800 nm;
in the preparation method, in the step (8), the metal electrode material comprises a titanium/platinum/gold, a titanium/aluminum/gold, and a chromium/platinum/gold multilayer film, and the thickness of the multilayer film electrode is 1-10 μm; the protective atmosphere is argon or nitrogen, and the annealing temperature is 300-800 ℃.
The invention has the following beneficial effects:
(1) on the basis of keeping the structure and performance of the gallium nitride-based diode, the high-thermal-conductivity diamond substrate material is introduced, so that the interface thermal resistance of the gallium nitride-based device can be reduced, and the heat dissipation effect and the use performance of the high-power device are improved when the high-thermal-conductivity diamond substrate material is applied.
(2) According to the invention, the diamond passivation layer is introduced into the gallium nitride-based device, so that the defect dislocation on the surface or in the interface of the p-type gallium nitride layer is reduced, the surface state characteristic of the p-type gallium nitride layer is improved, the surface leakage current and the radiation resistance of the gallium nitride-based diode serving as a detector device are reduced, and the method has important significance for improving the performance of the gallium nitride-based diode device.
(3) The diamond passivation layer on the surface of the gallium nitride-based diode device has the functions of wear resistance, corrosion resistance and protection.
Drawings
FIG. 1 is a schematic view of a diamond substrate bonded to an intrinsic gallium nitride wafer;
FIG. 2 is a schematic view of an n-type GaN layer epitaxially grown on an intrinsic GaN wafer;
FIG. 3 is a schematic view of a transition dielectric layer deposited on the surface of an n-type gallium nitride layer;
FIG. 4 is a schematic diagram of a mesa formed by patterning an n-type GaN layer on the surface of a transition dielectric layer;
FIG. 5 is a schematic diagram of an n-type GaN layer mesa epitaxially grown intrinsic GaN layer or quantum well layer structure, and a p-type GaN layer;
FIG. 6 is a schematic view of a dielectric protection layer and a diamond passivation layer sequentially deposited on the surface of a p-type gallium nitride layer;
FIG. 7 is a schematic diagram of the p-type and n-type electrode regions formed on the p-type and n-type gallium nitride layers;
fig. 8 is a schematic diagram of p-type and n-type metal electrodes formed on the p-type gallium nitride layer and the n-type gallium nitride layer.
In the figure: 1. a diamond substrate; 2. a binding medium; 3. an intrinsic gallium nitride wafer; 4. an n-type gallium nitride layer; 5. a transition medium layer; 6. an intrinsic gallium nitride layer or quantum well layer structure; 7. a p-type gallium nitride layer; 8. a dielectric protective layer; 9. a diamond passivation layer; 10. an n-type electrode region; 11. a p-type electrode region; 12. an n-type metal electrode; 13. a p-type metal electrode.
Detailed Description
The invention relates to a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which specifically comprises the following steps:
(1) and bonding the back surface of the non-doped intrinsic gallium nitride wafer 3 with the diamond substrate 1 through a bonding medium 2 to obtain the intrinsic gallium nitride wafer taking diamond as a substrate. In the step (1), the combination mode of gallium nitride and diamond comprises methods such as bonding, heteroepitaxial growth and the like, wherein the gallium nitride wafer comprises a self-supporting gallium nitride wafer or a sapphire-based gallium nitride thick film wafer, and the diamond substrate comprises a diamond self-supporting polycrystalline film or a diamond monocrystal;
(2) an n-type gallium nitride layer 4 is doped and epitaxially grown on the surface of an intrinsic gallium nitride wafer 3 taking diamond as a substrate 1 by adopting a metal organic chemical vapor deposition technology. In the step (2), the doping element is phosphorus or silicon, the thickness of the n-type gallium nitride layer is 2-20 mu m, and the electron concentration is 1018~1021 cm-3；
(3) And depositing a transition medium layer 5 on the surface of the n-type gallium nitride layer 4 by using the technologies such as plasma enhanced chemical vapor deposition, electron beam evaporation, pulse laser melting and the like. In the step (3), the transition medium layer 4 film comprises an etching mask layer with a single-layer or multi-layer structure, such as silicon oxide, silicon nitride, nickel and the like, and the thickness is 100-800 nm.
(4) And carrying out conventional photoetching, developing, wet etching/dry etching and other processes on the transition dielectric layer 5 to form a graphical n-type gallium nitride layer table board. In the step (4), the circular or square top surface of the middle part of the n-type gallium nitride layer is exposed after the transition medium layer is corroded.
(5) And sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer junction 6 and a p-type gallium nitride layer 7 on the surface of the exposed n-type gallium nitride layer 4 by adopting a metal organic chemical vapor deposition technology, and removing the residual transition medium layer. In the step (5), the thickness of the intrinsic gallium nitride layer is 5-20 mu m, and the thickness of the quantum well layer is 10-100 nm; the p-type gallium nitride layer is doped with magnesium, has a thickness of 200-800 nm and a hole concentration of 1015~1018 cm-3。
(6) And a dielectric protection layer 8 and a diamond passivation layer 9 are sequentially deposited on the surface of the p-type gallium nitride layer from bottom to top. In the step (6), the dielectric protective layer comprises silicon nitride, silicon oxide, silicon oxynitride and an aluminum nitride film, and the preparation method comprises plasma enhanced chemical vapor deposition, electron beam evaporation, laser melting evaporation or magnetron sputtering technology; the preparation method of the diamond passivation layer comprises the microwave plasma chemical vapor deposition or hot wire chemical vapor deposition technology; the protective thickness of the dielectric layer is 50-500 nm, and the thickness of the diamond layer is 200-800 nm.
(7) P-type electrode region 11 and n-type electrode region 10 are formed on the p-type gallium nitride layer and n-type gallium nitride layer by conventional photolithography, development, wet etching/dry etching, and the like.
(8) And depositing a metal multilayer film in the p-type and n-type electrode areas by adopting the technologies of electron beam evaporation, magnetron sputtering and the like, stripping the p-type metal electrode 13 and the n-type metal electrode 12, and finally carrying out protective atmosphere annealing treatment on the metal electrodes to obtain the gallium nitride-based diode device with the diamond passivation layer. In the step (8), the metal electrode material comprises a titanium/platinum/gold, a titanium/aluminum/gold, and a chromium/platinum/gold multilayer film, and the thickness of the multilayer film electrode is 1-10 mu m; the protective atmosphere is argon or nitrogen, and the annealing temperature is 300-800 ℃.
The present invention is further illustrated by, but is not limited to, the following examples.
Example 1:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) cleaning the non-doped intrinsic gallium nitride self-supporting wafer and the diamond self-supporting polycrystalline film substrate by using a dilute hydrochloric acid solution and deionized water, drying the wafer by blowing, and uniformly coating a proper amount of bonding materials on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding to obtain the gallium nitride wafer taking the diamond self-supporting polycrystalline film as the substrate, wherein the gallium nitride wafer is shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, epitaxially growing an n-type gallium nitride layer with the thickness of 5 mu m and the electron concentration of 2.5 multiplied by 1019 cm-3As shown in fig. 2.
(3) A single-layer silicon oxide or silicon nitride transition dielectric layer with the thickness of 200 nm is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technology, as shown in fig. 3.
(4) The silicon oxide or silicon nitride transition dielectric layer is subjected to conventional processes such as photoetching, developing, exposure, wet etching/dry etching and the like, the circular top surface of the middle part of the n-type gallium nitride layer is exposed, and a graphical n-type gallium nitride layer table top is formed, as shown in fig. 4.
(5) Epitaxially growing an intrinsic gallium nitride layer with a thickness of 6 μm on the surface of the exposed n-type gallium nitride layer by Metal Organic Chemical Vapor Deposition (MOCVD), and epitaxially growing a p-type gallium nitride layer with a thickness of 300 nm by doping magnesium element with a hole concentration of 2.5 × 1017 cm-3And etching to remove the residual transition dielectric layer of silicon oxide or silicon nitride, and etching to remove the residues on the mesa side walls of the intrinsic gallium nitride layer and the p-type gallium nitride layer to form smooth side surfaces, as shown in fig. 5.
(6) Firstly, a silicon nitride dielectric protection layer with the thickness of 100nm is prepared on the surface of the p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 400 nm is grown by adopting microwave plasma chemical vapor deposition, as shown in figure 6.
(7) P-type and n-type electrode regions are formed on the steps of the p-type and n-type gallium nitride layers by conventional photolithography, development, exposure, wet etching/plasma etching, etc., as shown in fig. 7.
(8) Depositing titanium/platinum/gold multilayer metal films on the p-type electrode area and the n-type electrode area respectively by adopting an electron beam evaporation technology, wherein the thickness of the multilayer film is 3 mu m, stripping the p-type metal electrode and the n-type metal electrode by using conventional positive glue, and carrying out 500 ℃ alloying annealing treatment on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in figure 8.
Example 2:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) cleaning the non-doped intrinsic gallium nitride self-supporting wafer and the diamond self-supporting polycrystalline film substrate by using a dilute hydrochloric acid solution and deionized water, drying the wafer by blowing, and uniformly coating a proper amount of bonding materials on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding to obtain the gallium nitride wafer taking the diamond self-supporting polycrystalline film as the substrate, wherein the gallium nitride wafer is shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, epitaxially growing an n-type gallium nitride layer with the thickness of 4 mu m and the electron concentration of 6 multiplied by 1019 cm-3As shown in fig. 2.
(3) A single-layer silicon oxide or silicon nitride transition dielectric layer with the thickness of 300 nm is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technology, as shown in fig. 3.
(4) The silicon oxide or silicon nitride transition dielectric layer is subjected to conventional processes such as photoetching, developing, exposure, wet etching/dry etching and the like, the circular top surface of the middle part of the n-type gallium nitride layer is exposed, and a graphical n-type gallium nitride layer table top is formed, as shown in fig. 4.
(5) Epitaxially growing an intrinsic gallium nitride layer with a thickness of 6 μm on the surface of the exposed n-type gallium nitride layer by Metal Organic Chemical Vapor Deposition (MOCVD), and epitaxially growing a p-type gallium nitride layer with a thickness of 300 nm by doping magnesium element with a hole concentration of 5 × 1017 cm-3Rotten bean curdThe silicon oxide or the silicon nitride residual transition dielectric layer is removed by etching, and the residues on the mesa side walls of the intrinsic gallium nitride layer and the p-type gallium nitride layer are removed by etching to form smooth side surfaces, as shown in fig. 5.
(6) Firstly, a silicon nitride dielectric protection layer with the thickness of 150 nm is prepared on the surface of the p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 600 nm is grown by adopting microwave plasma chemical vapor deposition, as shown in figure 6.
(7) P-type and n-type electrode regions are formed on the steps of the p-type and n-type gallium nitride layers by conventional photolithography, development, exposure, wet etching/plasma etching, etc., as shown in fig. 7.
(8) Depositing titanium/platinum/gold multilayer metal films on the p-type electrode area and the n-type electrode area respectively by adopting an electron beam evaporation technology, wherein the thickness of the multilayer film is 3 mu m, stripping the p-type metal electrode and the n-type metal electrode by using conventional positive glue, and carrying out 500 ℃ alloying annealing treatment on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in figure 8.
Example 3:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) cleaning the non-doped intrinsic gallium nitride self-supporting wafer and the diamond single-wafer substrate by using a dilute hydrochloric acid solution and deionized water, drying the wafer by blowing, and uniformly coating a proper amount of bonding materials on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding to obtain the gallium nitride wafer taking the diamond single-wafer as the substrate, wherein the bonding materials are shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking a diamond single crystal wafer as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, and epitaxially growing an n-type gallium nitride layer with the thickness of 5 mu m and the electron concentration of 3 multiplied by 1019 cm-3As shown in fig. 2.
(3) A single-layer silicon oxide or silicon nitride transition dielectric layer with the thickness of 200 nm is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technology, as shown in fig. 3.
(4) The silicon oxide or silicon nitride transition dielectric layer is subjected to conventional processes such as photoetching, developing, exposure, wet etching/dry etching and the like, the circular top surface of the middle part of the n-type gallium nitride layer is exposed, and a graphical n-type gallium nitride layer table top is formed, as shown in fig. 4.
(5) Epitaxially growing an intrinsic gallium nitride layer with a thickness of 5 μm on the surface of the exposed n-type gallium nitride layer by Metal Organic Chemical Vapor Deposition (MOCVD), and epitaxially growing a p-type gallium nitride layer with a thickness of 300 nm by doping magnesium element with a hole concentration of 5 × 1017 cm-3And etching to remove the residual transition dielectric layer of silicon oxide or silicon nitride, and etching to remove the residues on the mesa side walls of the intrinsic gallium nitride layer and the p-type gallium nitride layer to form smooth side surfaces, as shown in fig. 5.
(6) Firstly, a silicon nitride dielectric protection layer with the thickness of 150 nm is prepared on the surface of the p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 500nm is grown by adopting microwave plasma chemical vapor deposition, as shown in figure 6.
(7) P-type and n-type electrode regions are formed on the steps of the p-type and n-type gallium nitride layers by conventional photolithography, development, exposure, wet etching/plasma etching, etc., as shown in fig. 7.
(8) Depositing titanium/platinum/gold multilayer metal films on the p-type electrode area and the n-type electrode area respectively by adopting an electron beam evaporation technology, wherein the thickness of the multilayer film is 3 mu m, stripping the p-type metal electrode and the n-type metal electrode by using conventional positive glue, and carrying out alloying annealing treatment at 450 ℃ on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in figure 8.
Claims (9)
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