CN113782420B - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- CN113782420B CN113782420B CN202110905617.8A CN202110905617A CN113782420B CN 113782420 B CN113782420 B CN 113782420B CN 202110905617 A CN202110905617 A CN 202110905617A CN 113782420 B CN113782420 B CN 113782420B
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- wafer
- silicon nitride
- nitride film
- vertical furnace
- furnace tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses a wafer processing method, and relates to the field of semiconductor manufacturing. The wafer processing method comprises the steps of setting the loading area environment of a vertical furnace tube machine as an oxygen-containing environment; transmitting the wafer to a vertical furnace tube machine; forming a silicon nitride film on the wafer through a vertical furnace tube machine table; transferring the wafer formed with the silicon nitride film to a loading area; solves the problem that the existing silicon nitride film has poor hydrophilicity and is easy to cause uneven BARC coating; the method has the advantages of improving the hydrophilicity of the surface of the silicon nitride film without increasing the process cost and avoiding the silicon loss caused by bubble formation on the substrate during photoetching.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a wafer processing method.
Background
The vertical furnace tube machine is one of important process equipment in a semiconductor manufacturing production line, and can be used for the procedures of diffusion, oxidization, annealing, chemical vapor deposition, alloy and the like of large-scale integrated circuits, discrete devices, power electronic devices, photoelectric devices, optical fibers and the like. And (3) feeding each batch (lot) into a reaction cavity of the vertical furnace tube machine through the wafer boat to perform corresponding processes.
In some chip manufacturing processes, a silicon nitride film is deposited by a vertical furnace platen, and photolithography is performed after the silicon nitride film is formed. During the photolithography process, a Bottom Anti-reflective coating (BARC) is applied to the surface of the silicon nitride film. However, BARCs are relatively sensitive to the surface hydrophilicity of the film, and silicon nitride films are relatively strong in hydrophobicity and relatively poor in hydrophilicity, so that the problem of uneven coating easily occurs when the BARCs are coated.
Disclosure of Invention
In order to solve the problems in the related art, the present application provides a wafer processing method. The technical scheme is as follows:
in one aspect, an embodiment of the present application provides a wafer processing method, including:
setting the loading area environment of the vertical furnace tube machine as an oxygen-containing environment;
transmitting the wafer to the vertical furnace tube machine;
forming a silicon nitride film on the wafer through the vertical furnace tube machine table;
and conveying the wafer with the silicon nitride film to the loading area.
Optionally, the transferring the wafer formed with the silicon nitride film to the loading area includes:
And controlling the wafer with the silicon nitride film to move from the reaction chamber of the vertical furnace tube machine to the loading area at a preset speed.
Optionally, the predetermined speed is less than 200mm/min.
Optionally, the setting the loading area environment of the vertical furnace tube machine to be an oxygen-containing environment includes:
and introducing oxygen or oxygen-containing gas into the loading area of the vertical furnace tube machine table.
Optionally, the oxygen concentration in the loading area environment is 100000-250000ppm.
Optionally, the wafer is placed on a wafer boat.
The technical scheme of the application at least comprises the following advantages:
Setting the loading area environment of the vertical furnace tube machine as an oxygen-containing environment; transmitting the wafer to a vertical furnace tube machine; forming a silicon nitride film on the wafer through a vertical furnace tube machine table; transferring the wafer formed with the silicon nitride film to a loading area; solves the problem that the existing silicon nitride film has poor hydrophilicity and is easy to cause uneven BARC coating; the method has the advantages of improving the hydrophilicity of the surface of the silicon nitride film without increasing the process cost and avoiding the silicon loss caused by bubble formation on the substrate during photoetching.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a wafer processing method according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a flowchart of a wafer processing method according to an embodiment of the application is shown, and the method at least includes the following steps:
step 101, setting the loading area environment of the vertical furnace tube machine as an oxygen-containing environment.
Currently, when a silicon nitride film is formed by using a vertical furnace platen, a loading area (loading area) environment of the vertical furnace platen is a nitrogen environment, and the gas in the loading area does not contain oxygen.
The loading area environment of the vertical furnace tube machine table is converted from a nitrogen environment to an oxygen-containing environment, so that the gas in the loading area contains oxygen.
Step 102, the wafer is transferred to a vertical furnace platen.
And transferring the wafer with the process before the silicon nitride film deposition to a vertical furnace tube machine.
Optionally, the wafer is transferred to a vertical furnace platen through a wafer transfer box (FOUP), and the wafer is placed on a wafer boat through a transfer system; and conveying the wafer into a reaction chamber of the vertical furnace tube through the wafer boat.
And 103, forming a silicon nitride film on the wafer through a vertical furnace tube machine.
And forming a silicon nitride film on the wafer through a CVD process in a reaction chamber of the vertical furnace tube machine.
And 104, conveying the wafer with the silicon nitride film to a loading area.
After a silicon nitride film meeting the requirement of a preset thickness is formed on the wafer, the wafer is moved from the reaction chamber to the loading area by moving the wafer boat. The wafer with the silicon nitride film formed is cooled in the loading area of the vertical furnace tube machine. The loading area environment of the vertical furnace tube machine table is still kept as an oxygen-containing environment.
Since there is still a residual temperature on the wafer after the formation of the silicon nitride film, for example: the wafer temperature reaches 700 ℃, and most of Si-N covalent bonds on the surface of the silicon nitride film on the wafer can be broken and Si-O bonds can be reformed under the residual high temperature in the process of cooling the wafer in the loading area.
Detecting the silicon nitride film formed by the wafer processing method provided by the embodiment of the application through a TEM (Transmission Electron Microscope projection electron microscope), and detecting the silicon nitride film formed by the existing method through the TEM, namely, the silicon nitride film formed under the condition that the loading area environment of the vertical furnace tube machine table is a nitrogen environment, wherein the film quality of the silicon nitride film corresponding to the two loading area environments is not different; changing the loading area environment of the vertical furnace tube machine table does not affect the performance of the silicon nitride film.
Since the Si-O bond has a better hydrophilicity than the Si-N bond, the surface hydrophilicity of the silicon nitride film is improved, and the coated BARC can more uniformly cover the silicon nitride film in the photolithographic process after the silicon nitride film is formed.
In summary, in the wafer processing method provided by the embodiment of the application, the loading area environment of the vertical furnace tube machine is set as the oxygen-containing environment; transmitting the wafer to a vertical furnace tube machine; forming a silicon nitride film on the wafer through a vertical furnace tube machine table; transferring the wafer formed with the silicon nitride film to a loading area; solves the problem that the existing silicon nitride film has poor hydrophilicity and is easy to cause uneven BARC coating; the method has the advantages of improving the hydrophilicity of the surface of the silicon nitride film without increasing the process cost and avoiding the silicon loss caused by bubble formation on the substrate during photoetching.
In an alternative embodiment based on the embodiment shown in fig. 1, in order to enable the si—o bond to be sufficiently formed on the surface of the silicon nitride film, to achieve better hydrophilicity of the surface of the silicon nitride film, step 104, that is, step "transfer the wafer with the silicon nitride film formed to the loading region" may be achieved by:
And controlling the wafer with the silicon nitride film to move from the reaction chamber of the vertical furnace tube machine to the loading area at a preset speed.
The wafers are placed on a wafer boat. Optionally, the wafer is moved from the reaction chamber of the vertical furnace platen to the loading zone at a predetermined speed by controlling the movement speed of the wafer boat loading the wafer.
The predetermined speed is less than 200mm/min.
Optionally, the wafer is moved from within the reaction chamber to the loading zone at a uniform speed.
In an alternative embodiment based on the embodiment shown in fig. 1, the step 101, that is, the step of setting the loading area environment of the vertical furnace platen to be an oxygen-containing environment, may be implemented as follows:
oxygen or oxygen-containing gas is introduced into the loading area of the vertical furnace tube machine table.
Optionally, air is introduced into the loading area of the vertical furnace tube machine. Because the air contains oxygen, the loading area environment of the vertical furnace tube machine table can be an oxygen-containing environment.
Optionally, oxygen is introduced into the loading area of the vertical furnace tube machine table, so that the oxygen concentration in the environment of the loading area is a preset concentration.
Optionally, oxygen and other gases which do not affect the performance of the silicon nitride film are introduced into the loading area of the vertical furnace tube machine table, so that the environment of the loading area is an oxygen-containing environment. Such as: and introducing oxygen and nitrogen into the loading area of the vertical furnace tube machine table to enable the oxygen concentration of the environment of the loading area to be a preset concentration.
In one example, the loading area environment of the vertical furnace tube machine is set to be an oxygen-containing environment, and the oxygen concentration of the loading area environment is 100000-250000ppm.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.
Claims (6)
1. A method of processing a wafer, the method comprising:
setting the loading area environment of the vertical furnace tube machine as an oxygen-containing environment;
transmitting the wafer to the vertical furnace tube machine;
forming a silicon nitride film on the wafer through the vertical furnace tube machine table;
Transmitting the wafer with the silicon nitride film to the loading area, and utilizing the residual temperature on the wafer to break most of Si-N covalent bonds on the surface of the silicon nitride film and reform Si-O bonds so as to improve the hydrophilicity of the surface of the silicon nitride film;
and forming a BARC layer on the surface of the silicon nitride film.
2. The method of claim 1, wherein transferring the wafer formed with the silicon nitride film to the loading zone comprises:
And controlling the wafer with the silicon nitride film to move from the reaction chamber of the vertical furnace tube machine to the loading area at a preset speed.
3. The method of claim 2, wherein the predetermined speed is less than 200mm/min.
4. The method of claim 1 or 2, wherein the setting the loading zone environment of the vertical furnace platen to an oxygen-containing environment comprises:
and introducing oxygen or oxygen-containing gas into the loading area of the vertical furnace tube machine table.
5. The method of claim 1, wherein the loading zone environment has an oxygen concentration of 100000 ppm to 250000ppm.
6. The method of claim 1, wherein the wafers are placed on a wafer boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110905617.8A CN113782420B (en) | 2021-08-05 | 2021-08-05 | Wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110905617.8A CN113782420B (en) | 2021-08-05 | 2021-08-05 | Wafer processing method |
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| CN113782420A CN113782420A (en) | 2021-12-10 |
| CN113782420B true CN113782420B (en) | 2024-07-19 |
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Citations (4)
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|---|---|---|---|---|
| JP2014103280A (en) * | 2012-11-20 | 2014-06-05 | Tokyo Electron Ltd | Heat insulator structure, substrate holding boat, processing unit and processing system |
| CN107533974A (en) * | 2015-05-07 | 2018-01-02 | 德克萨斯仪器股份有限公司 | Low stress low hydrogen type lpcvd silicon nitride |
| CN110592666A (en) * | 2019-08-27 | 2019-12-20 | 长江存储科技有限责任公司 | Polycrystalline silicon film deposition system and method |
| CN112313777A (en) * | 2018-10-15 | 2021-02-02 | 玛特森技术公司 | Ozone for selective hydrophilic surface treatment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004103990A (en) * | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| CN101673680B (en) * | 2008-09-10 | 2012-04-25 | 中芯国际集成电路制造(北京)有限公司 | Method for removing ammonium chloride crystals in silicon nitride deposition process |
| CN102420129A (en) * | 2011-09-28 | 2012-04-18 | 上海宏力半导体制造有限公司 | Method for preventing photoresist holes from being formed on metal layer |
| WO2017213743A1 (en) * | 2016-06-06 | 2017-12-14 | Applied Materials, Inc. | Method for wafer outgassing control |
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- 2021-08-05 CN CN202110905617.8A patent/CN113782420B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014103280A (en) * | 2012-11-20 | 2014-06-05 | Tokyo Electron Ltd | Heat insulator structure, substrate holding boat, processing unit and processing system |
| CN107533974A (en) * | 2015-05-07 | 2018-01-02 | 德克萨斯仪器股份有限公司 | Low stress low hydrogen type lpcvd silicon nitride |
| CN112313777A (en) * | 2018-10-15 | 2021-02-02 | 玛特森技术公司 | Ozone for selective hydrophilic surface treatment |
| CN110592666A (en) * | 2019-08-27 | 2019-12-20 | 长江存储科技有限责任公司 | Polycrystalline silicon film deposition system and method |
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| CN113782420A (en) | 2021-12-10 |
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