CN101673680B - Method for removing ammonium chloride crystals in silicon nitride deposition process - Google Patents
Method for removing ammonium chloride crystals in silicon nitride deposition process Download PDFInfo
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- CN101673680B CN101673680B CN2008102221751A CN200810222175A CN101673680B CN 101673680 B CN101673680 B CN 101673680B CN 2008102221751 A CN2008102221751 A CN 2008102221751A CN 200810222175 A CN200810222175 A CN 200810222175A CN 101673680 B CN101673680 B CN 101673680B
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- wafer
- silicon nitride
- ammonium chloride
- chloride crystals
- air
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Abstract
The invention provides a method for removing ammonium chloride crystals in a silicon nitride deposition process, which comprises the following steps: mounting and delivering a wafer from a mounting zone to a high temperature furnace tube for carrying out silicon nitride deposition; and after finishing the silicon nitride deposition and taking out the wafer from the high temperature furnace tube, carrying out cooling treatment on the wafer by the air introduced into the mounting zone, wherein in the cooling treatment process, the air introduced into the mounting zone weathers the ammonium chloride crystals generated in the silicon nitride deposition until the wafer is cooled to a preset temperature and all the ammonium chloride crystals are weathered. By applying the scheme of the invention, because in the cooling process of the wafer, the ammonium chloride crystals can be effectively removed by air with low cost, water and other chemical solutions are not needed for washing the wafer, thus the process time and the process cost are saved.
Description
Technical field
The present invention relates to the semiconductor fabrication process technology, particularly relate to a kind of method of in silicon nitride deposition process, removing ammonium chloride crystals.
Background technology
Going up deposited silicon nitride at wafer (wafer) is one common technology during semiconductor is made, and normally from loading area (load area) the wafer load is sent into and is carried out the silicon nitride deposition the high temperature furnace pipe (Tube).Because deposition finishes when high temperature furnace pipe is got sheet, the temperature of wafer can reach 600 °～700 ° than higher, so also need when getting sheet, utilize the nitrogen that feeds that it is lowered the temperature usually.
Particularly, Fig. 1 has shown the operating equipment sketch map of deposited silicon nitride.Operating personnel can be placed on load port (Load Port) 102 with the front open type wafer box that one or several wafers are housed (FOUP) 101; The front open type wafer box translator unit of equipment (FOUP Transfer) 103 is sent to reserve zone (Stocker) 104 from load port 102 with FOUP.When the needs deposited silicon nitride, FOUP Transfer103 takes out FOUP101 from Stocker104 and is placed on the transfer station (Stage) 105; To brilliant boat (Boat) 107, luggage sheet (load) process of going forward side by side rises up into sealing in the heated boiler tube (Tube) 108 with it to wafer translator unit (Wafer Transfer) 106 with the wafer load among the FOUP101.After this, owing to can in Tube108, feed NH
3And SiH
2CL
2Gas, these two kinds of gases react in hot conditions, deposited silicon nitride (Si on wafer
3N
4).Reaction need be got sheet (unload) process after finishing, that is: the Boat107 that will be mounted with wafer lowers from Tube108, feeds nitrogen (N again
2) wafer is lowered the temperature.
Because NH
3And SiH
2CL
2When gas reacts, not only can generate Si in Tube108
3N
4, also can generate intermediate product HCL, its chemical equation is: NH
3+ SiH
2CL
2->Si
3N
4+ HCL.And intermediate product HCL can continue and NH
3Generate ammonium chloride (NH
4CL), its chemical equation is: HCL+NH
3->NH
4CL.When wafer from 600 °～700 ° processes of lowering the temperature of high temperature, NH
4CL can produce crystallization on wafer under the condition under 350 ° and the atmospheric pressure, possibly produce adverse influence to the subsequent technique operation.
Fig. 2 produces NH on the wafer behind the deposited silicon nitride
4CL crystallization general status sketch map.From shown in Figure 2, the crystal column surface black part is divided into crystallization, roughly has more than the hundreds of thousands, belongs to than serious situation.Fig. 3 is a viewed NH under the ESEM
4CL crystallization situation sketch map.Erose particle is NH among the figure
4CL crystallization, stripes are divided into the figure on wafer top layer self.Because NH
4The CL crystallization has stopped the wafer top layer, will cause influencing the result of subsequent technique.Suppose that subsequent technique is directly to NH is arranged
4The wafer of CL crystallization carries out etching, and its etching the possibility of result is as shown in Figure 4.Can be clear that, because NH
4Still there is part residue vestige in stopping of CL crystallization after the etching, can not reach desirable etching effect.
In the prior art, in order to remove the NH on the wafer
4The CL crystallization need utilize solution such as water and chemicals to come cleaning wafer usually, and this must increase technology cost and process time.Thus it is clear that, also do not have in the prior art a kind ofly can practice thrift technology cost and process time and remove the method for ammonium chloride crystals.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of method of in silicon nitride deposition process, removing ammonium chloride crystals, can practice thrift technology cost and process time.
In order to achieve the above object, the technical scheme of the present invention's proposition is:
A kind of method of in silicon nitride deposition process, removing ammonium chloride crystals, this method comprises:
From loading area the wafer load is sent into high temperature furnace pipe and carry out the silicon nitride deposition; After finishing the silicon nitride deposition and getting sheet, utilize the air that feeds loading area to the wafer processing of lowering the temperature from high temperature furnace pipe; In the cooling processing procedure, the air that feeds loading area carries out weathering to the ammonium chloride crystals that is produced in the silicon nitride deposition, up to wafer is reduced to below the temperature that is provided with in advance and ammonium chloride crystals that weathering is intact all till.
In the such scheme, the air of said feeding loading area is that said wafer load is sent into high temperature furnace pipe and said wafer temperature reduced in advance arbitrary time point begins to feed between the temperature that is provided with.
In the such scheme, said air is clean dry air CDA.
In the such scheme, the content of oxygen is 10%～40% in the said air.
In the such scheme, the said temperature that is provided with in advance is the temperature below 70 degrees centigrade.
In sum; A kind of method of in silicon nitride deposition process, removing ammonium chloride crystals that the present invention proposes; Remove ammonium chloride crystals effectively owing in the process of wafer cooling, just can utilize cheaply air; Need not to utilize water and other chemical solutions that wafer is cleaned, not only can practice thrift the process time, can also practice thrift the technology cost.
Description of drawings
Fig. 1 is the operating equipment sketch map of deposited silicon nitride.
Fig. 2 produces ammonium chloride crystals general status sketch map on the wafer behind the deposited silicon nitride.
Fig. 3 viewed ammonium chloride crystals situation sketch map under the ESEM.
Fig. 4 is the sketch map as a result that wafer is carried out etching having under the ammonium chloride crystals situation.
Fig. 5 a～Fig. 5 c is the general status sketch map of ammonium chloride crystals weathering in air on the wafer.
Fig. 6 a～Fig. 6 d is a situation sketch map of under ESEM, observing the ammonium chloride crystals weathering.
Fig. 7 is the flow chart of the embodiment of the invention.
Fig. 8 a and Fig. 8 b are one group and utilize the contrast sketch map after prior art and the present invention program realize silicon nitride deposition process.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, the present invention is done to describe in detail further below in conjunction with accompanying drawing and specific embodiment.
In order in silicon nitride deposition process, to remove ammonium chloride crystals, the applicant has carried out a large amount of experiments and has found that air can carry out effective weathering to ammonium chloride crystals.Fig. 5 a～Fig. 5 c is the general status sketch map of ammonium chloride crystals efflorescence in air in the experiment.Wherein, Fig. 5 a is the observed situation of time point A, and Fig. 5 b is the observed situation of time point B, and Fig. 5 c is the observed situation of time point C.Can see that from Fig. 5 a～Fig. 5 c whenever ammonium chloride crystals is fewer and feweri on wafer after a while, up to complete obiteration.
Fig. 6 a～Fig. 6 d is a situation sketch map of observing the ammonium chloride crystals weathering in the experiment under the ESEM.Can be clear that more that from Fig. 6 a～Fig. 6 d ammonium chloride crystals is through more and more littler after the weathering, up to complete obiteration.
Thus, the present invention provides a kind of method of in silicon nitride deposition process, removing ammonium chloride crystals, when carrying out the silicon nitride deposition process operation, from loading area the wafer load is sent into high temperature furnace pipe and carries out the silicon nitride deposition; After finishing the silicon nitride deposition and getting sheet, utilize the air that feeds loading area to the wafer processing of lowering the temperature from high temperature furnace pipe; In the cooling processing procedure, the air that feeds loading area carries out weathering to the ammonium chloride crystals that is produced in the silicon nitride deposition, up to wafer is reduced to below the temperature that is provided with in advance and ammonium chloride crystals that weathering is intact all till.
Utilize air cooling-down to reach to remove the reason of ammonium chloride crystals to be: at wafer from the process that high temperature is lowered the temperature; If crystallization has taken place in ammonium chloride on wafer under 350 degrees centigrade and an atmospheric condition; The air that feeds can be easy to make ammonium chloride crystals generation weathering, thereby reaches the purpose of removing ammonium chloride crystals.Like this,, need not to utilize water and other chemical solutions that wafer is cleaned, not only can practice thrift the process time, can also practice thrift the technology cost because the present invention just can utilize cheaply air to remove ammonium chloride crystals effectively in the process of wafer cooling.
In practical application, in order to prevent wafer and airborne oxygen before the deposited silicon nitride unnecessary oxidation reaction takes place, just need be to the loading area bubbling air after the wafer load is sent into high temperature furnace pipe.Like this, because the wafer load is sent into after the high temperature furnace pipe, high temperature furnace pipe can be sealed well, thus the oxidation reaction of avoiding.In addition, because the temperature when high temperature furnace pipe is got sheet is very high, processings of it need being lowered the temperature is so as long as reduce to the temperature that sets in advance before to the loading area bubbling air at wafer temperature.That is to say that can reduce in advance that arbitrary time point is to the loading area bubbling air between the temperature that is provided with the wafer load being sent into high temperature furnace pipe and wafer temperature, the air of feeding was both lowered the temperature to wafer, again the ammonium chloride crystals on the wafer was carried out weathering.The temperature that is provided with in advance described here can be the temperature below 70 degrees centigrade.
When guaranteeing that temperature is reduced in advance the temperature that is provided with, weathering all takes place in ammonium chloride crystals all on the wafer, should be as early as possible to the loading area bubbling air.In general, the wafer load is being sent into high temperature furnace pipe and all belonged to the time of bubbling air early to the loading area bubbling air from the time that high temperature furnace pipe is got between the sheet finishing the silicon nitride deposition.This is because bubbling air can be prepared the environment of a weathering very soon for the ammonium chloride crystals on the wafer as early as possible, so that in the wafer temperature-fall period, carry out the weathering of ammonium chloride crystals simultaneously.Certainly, ability is to the loading area bubbling air after a period of time if get sheet from high temperature furnace pipe in end silicon nitride deposition, and possibly there is more ammonium chloride crystals in wafer so.In this case, just need to feed the air of long period, but still can ammonium chloride crystals be removed fully.
In the practical application; Feed clean dry air (CDA owing to possessing usually in the equipment that carries out silicon nitride deposition process to loading area; Clean & Dry Air) ability; If, feed clean dry air (CDA) and come further to save the feeding expense that other air caused to wafer processings of lowering the temperature so directly utilize this function of this equipment.
In addition,, possibly not reach the weathering purpose if oxygen content is too low in the bubbling air, and if oxygen content is too high, possibly influence equipment and product again.Given this, can aerating oxygen content in the practical application be 10%～40% air.
The present invention program be elaborated below with embodiment in order to explain better.
In the present embodiment, suppose to feed clean dry air (CDA), wherein the content of oxygen is 20%; And hypothesis need be reduced to 25 degrees centigrade of room temperatures with wafer temperature.
As shown in Figure 7, present embodiment realizes that the step of silicon nitride deposition process comprises:
This step is identical with prior art, in fact is exactly to utilize the brilliant boat (Boat) 107 of loading area among Fig. 1 to load wafer, and it is sent into sealing in the heated boiler tube (Tube) 108.After this, the NH in the feeding high temperature furnace pipe (Tube) 108
3And SiH
2CL
2Gas reacts in hot conditions, and on wafer deposited silicon nitride (Si
3N
4), its chemical equation is: NH
3+ SiH
2CL
2->Si
3N
4+ HCL.
Certainly, identical with prior art, realize that the process of silicon nitride deposition still can produce intermediate product HCL.Intermediate product HCL can continue and NH
3Generate ammonium chloride (NH
4CL), its chemical equation is: HCL+NH
3->NH
4CL.
Present embodiment is the wafer load to be sent into high temperature furnace pipe (Tube) 108 just feed clean dry air (CDA) to loading area immediately afterwards; And in the practical application; Can be not yet bubbling air at this moment, as long as send into high temperature furnace pipe (Tube) 108 and wafer temperature reduced to arbitrary time point bubbling air between the temperature that is provided with in advance at the wafer load.
In addition, this step is that the feeding oxygen content is 20% air, also can feed the air of other oxygen content in the practical application, as long as 10%～40%.
This step is identical with prior art, and brilliant boat (Boat) 107 that will be mounted with wafer in fact exactly drops to loading area from high temperature furnace pipe (Tube) 108.
This step is that wafer temperature is reduced to 25 degrees centigrade of room temperatures, in the practical application, in order to practice thrift the process time, can not wait until that also temperature reduces to room temperature, as long as reduce to below 70 degrees centigrade.
Fig. 8 a and Fig. 8 b are one group and utilize the contrast sketch map after prior art and embodiment of the invention scheme realize silicon nitride deposition process.Can see that from Fig. 8 a because the nitrogen that the prior art utilization feeds is to wafer processings of lowering the temperature, the defective (defect) of cooling back crystal column surface often reaches totally 23566.These defect are ammonium chloride crystals and a spot of particle (particle) mostly.And can see that from Fig. 8 b because the air that the present invention utilizes feeding is to wafer processings of lowering the temperature, the cooling afterwards defect of crystal column surface is fewer, 140 particles (particle) are only arranged.
Use the present invention program, handle because the present invention program utilizes cheaply air that wafer has been carried out cooling in silicon nitride deposition process, thus can the weathering ammonium chloride crystals in cooling, reach the purpose of removing ammonium chloride crystals.Like this, accomplish after the silicon nitride deposition, just need not to utilize water and other chemical solutions that wafer is cleaned, not only can practice thrift the process time, can also practice thrift the technology cost.
In sum, more than being merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. method of in silicon nitride deposition process, removing ammonium chloride crystals is characterized in that this method comprises:
From loading area the wafer load is sent into high temperature furnace pipe and carry out the silicon nitride deposition; After finishing the silicon nitride deposition and getting sheet, utilize the air that feeds loading area to the wafer processing of lowering the temperature from high temperature furnace pipe; In the cooling processing procedure, the air that feeds loading area carries out weathering to the ammonium chloride crystals that is produced in the silicon nitride deposition, up to wafer is reduced to below 70 degrees centigrade and ammonium chloride crystals that weathering is intact all till.
2. method according to claim 1 is characterized in that, the air of said feeding loading area is sent said wafer load into high temperature furnace pipe and said wafer temperature reduced to arbitrary time point begins to feed between 70 degrees centigrade.
3. method according to claim 1 is characterized in that, said air is clean dry air CDA.
4. according to each described method of claim 1 to 3, it is characterized in that the content of oxygen is 10%～40% in the said air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102221751A CN101673680B (en) | 2008-09-10 | 2008-09-10 | Method for removing ammonium chloride crystals in silicon nitride deposition process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102221751A CN101673680B (en) | 2008-09-10 | 2008-09-10 | Method for removing ammonium chloride crystals in silicon nitride deposition process |
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| Publication Number | Publication Date |
|---|---|
| CN101673680A CN101673680A (en) | 2010-03-17 |
| CN101673680B true CN101673680B (en) | 2012-04-25 |
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| CN113782420B (en) * | 2021-08-05 | 2024-07-19 | 华虹半导体(无锡)有限公司 | Wafer processing method |
| CN119042381B (en) * | 2024-10-30 | 2025-02-28 | 浙江丽水中欣晶圆半导体科技有限公司 | A replaceable sleeve air inlet valve for processing wafers |
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