CN113722063B - Control method of silicon controlled rectifier and related equipment - Google Patents
Control method of silicon controlled rectifier and related equipment Download PDFInfo
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- CN113722063B CN113722063B CN202110950665.9A CN202110950665A CN113722063B CN 113722063 B CN113722063 B CN 113722063B CN 202110950665 A CN202110950665 A CN 202110950665A CN 113722063 B CN113722063 B CN 113722063B
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- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
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Abstract
The invention discloses a control method of a silicon controlled rectifier and related equipment, wherein the method comprises the steps of obtaining event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier; sorting the event time information according to the event time to obtain a sorting event table; determining an event set corresponding to each event moment according to the ordered event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information; and executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon. The invention can control a plurality of thyristors by only one timer, and has high accuracy and low cost.
Description
Technical Field
The invention relates to the field of circuits, in particular to a control method of a silicon controlled rectifier and related equipment.
Background
When the singlechip works, the data access is carried out on the memory according to the machine period. In order to realize accurate control of time, a timer is generally adopted to control the access of the singlechip. When multiple paths of thyristors exist, the work of each thyristor is controlled finely, so that most of the thyristors are controlled by a timing IC, a PWM timer or a singlechip with very much timer resources. Both the timing IC and the PWM timer are costly. In order to reduce the cost, manufacturers also use a fixed period for scanning.
The fixed period scanning mode is simple to realize, but has lower precision, and cannot be acquired for events in the middle of the scanning period. In addition, the periodic scanning can enable the timer to be continuously connected and interrupted, the work load of the singlechip is increased, and the work time of the main program is shortened. The regular interruption of the common singlechip is less than or equal to 100us, and heavier load can be generated on the singlechip.
Disclosure of Invention
The invention aims to solve the technical problems that the control cost of the accurate silicon controlled rectifier is high, and provides a control method of the silicon controlled rectifier aiming at the defects of the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a method of controlling a silicon controlled rectifier, the method comprising:
acquiring event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier;
sorting the event time information according to the event time to obtain a sorting event table;
determining an event set corresponding to each event moment according to the ordered event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information;
and executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon.
The method for controlling the silicon controlled rectifier, wherein the determining the event set corresponding to each event time according to the ordered event table comprises the following steps:
according to a preset adjustment algorithm, adjusting event moments in the ordered event table to obtain an adjustment event table;
and determining an event set corresponding to each event time according to the event time information in the adjustment event table for each event time.
The method for controlling the silicon controlled rectifier, wherein the step of adjusting the event time in the ordered event table according to a preset adjustment algorithm, the step of obtaining an adjustment event table comprises the following steps:
calculating the waiting time between the (n+1) th event content and the Nth event content according to the ordered event table, wherein N is a positive integer;
and when the waiting time is smaller than a preset event waiting threshold value, adjusting the event time corresponding to the (n+1) th event content to the event time corresponding to the Nth event content.
The method for controlling a silicon controlled rectifier, wherein for each event time, before determining an event set corresponding to the event time according to the event time information in the adjustment event table, further includes:
and compressing event contents in the adjustment event table according to a preset compression algorithm to obtain a silicon controlled rectifier state value corresponding to each event content.
The control method of the silicon controlled rectifier comprises the following steps that the state value of the silicon controlled rectifier comprises an IO state value; compressing the event content in the adjustment event table according to a preset compression algorithm, and obtaining a state value of the silicon controlled rectifier corresponding to each event content includes:
when the event content is an opening event, the IO state value corresponding to the event content is bit 1;
when the event content is a closing event, the IO state value corresponding to the event content is bit 0.
The time moment comprises an opening moment and a closing moment; the determining, for each event time, an event set corresponding to the event time according to the event time information includes:
for each silicon controlled rectifier, when the event time is smaller than the corresponding opening time of the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is a closing state;
when the event time is greater than or equal to the opening time corresponding to the silicon controlled rectifier and less than the closing time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is an opening state;
and when the event time is smaller than or equal to the closing time corresponding to the controllable silicon, determining that the controllable silicon state corresponding to the controllable silicon is the closing state.
The method for controlling the thyristors, wherein the executing the operation corresponding to the event set according to the event time, so as to control the state of each thyristor, includes:
calculating loading time corresponding to the event set according to the event time;
and executing the operation corresponding to each state of the controllable silicon according to the loading time so as to control the state of each controllable silicon.
A control device of a silicon controlled rectifier, wherein the control device specifically comprises.
The acquisition module is used for acquiring event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier;
the ordering module is used for ordering the event time information according to the event time to obtain an ordered event table;
the determining module is used for determining an event set corresponding to each event moment according to the ordering event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information;
and the execution module is used for executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon.
A computer-readable storage medium storing one or more programs executable by one or more processors to implement steps in a method of controlling a silicon controlled rectifier as described in any one of the above.
A terminal device, comprising: a processor, a memory, and a communication bus; the memory has stored thereon a computer readable program executable by the processor;
the communication bus realizes connection communication between the processor and the memory;
the steps in the method for controlling a silicon controlled rectifier as described in any one of the above are implemented when the processor executes the computer readable program.
The beneficial effects are that: compared with the prior art, the invention provides a control method of a silicon controlled rectifier and related equipment, wherein the method firstly acquires event time information corresponding to the silicon controlled rectifier and determines event time corresponding to each event content of each silicon controlled rectifier. And then ordering the event time information according to the event moments to obtain the change process of the event, and integrating the event to obtain the expected state of each silicon controlled rectifier at each event moment. And finally, when the thyristors are controlled, the state of each thyristor is adjusted according to the event time so as to achieve the same state as the expected state of the thyristors. Compared with the prior control method, the method can determine the state of each silicon controlled rectifier to be adjusted according to the event time, so that the control of a plurality of silicon controlled rectifiers can be completed by only one timer, and the cost is low. Meanwhile, as one timer can be completed and the control of a plurality of thyristors is processed simultaneously, the accuracy is higher.
Drawings
Fig. 1 is a first flowchart of a method for controlling a thyristor according to the present invention.
Fig. 2 is a schematic structural diagram of a control device for a silicon controlled rectifier according to the present invention.
Fig. 3 is a schematic structural diagram of a terminal device provided by the present invention.
Detailed Description
The invention provides a control method of a silicon controlled rectifier and related equipment, and aims to make the purposes, technical schemes and effects of the invention clearer and more definite. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
It should be noted that the above application scenario is only shown for the convenience of understanding the present invention, and embodiments of the present invention are not limited in this respect. Rather, embodiments of the invention may be applied to any scenario where applicable.
The invention will be further described by the description of embodiments with reference to the accompanying drawings.
As shown in fig. 1, the present embodiment provides a method for controlling a silicon controlled rectifier, where the method may be applied to control the silicon controlled rectifier by a single chip microcomputer, and the method may include the following steps:
s10, acquiring event time information corresponding to each pre-connected silicon controlled rectifier.
Specifically, the user sets the corresponding event time information for each silicon controlled rectifier, wherein the event time information comprises each event content of the silicon controlled rectifier and the event time corresponding to each event. When the event time information is created, the event time information corresponding to each thyristor may be represented in a table form, or may be in an array form or the like.
In this embodiment, the event time information is expressed in the form of a table, and the unit of event time is μs, specifically as follows:
wherein, 1# to 6# are the numbers of the thyristors, 1# is the number 1 thyristor, 2# is the number 2 thyristor, and so on, and 6# is the number 6 thyristor. The event content refers to that a certain time is zero, then the zero is taken as a starting point, and the singlechip controls the silicon controlled rectifier to execute a certain event at intervals. Event time is the time when certain event content occurs. Taking the silicon controlled rectifier 1# as an example, the silicon controlled rectifier 1# changes the state to be on at the interval of 1500 mu s, and changes the state to be off at the interval of 2500 mu s. In this embodiment, the zero time is the time when the ac time crosses zero.
S20, sorting the event time information according to the event time to obtain a sorting event table.
Specifically, the event time information is ordered according to the event time and the size of the event time, and an ordered event table is obtained. The ordered event table in this embodiment is as follows, and the unit of event time is μs:
s30, determining an event set corresponding to each event moment according to the ordered event table.
Specifically, after the ordered event table is obtained, for each event time, the state of each thyristor at the event time, that is, the state of the thyristor, is determined. The states of the thyristors corresponding to each event time are referred to as an event set corresponding to the event time.
Because the silicon controlled rectifier is controlled by the singlechip, the singlechip is interrupted in the execution process, and the main program being executed is interrupted when the singlechip is interrupted. Therefore, when the time interval between two events is short, for example, the execution of the event A is completed, the singlechip is interrupted to execute another task, and at the moment, the execution time of the event B is just at, and the execution of the event B can be influenced due to the interruption of the singlechip. Thus, for this situation, the time of the event needs to be adjusted. Therefore, an adjustment algorithm is preset, and then the event time in the ordered event table is adjusted according to the adjustment algorithm, so that an adjustment event table is obtained.
Firstly, according to the ordered event table, calculating the waiting time between the (n+1) th event content and the Nth event content, wherein N is a positive integer.
For example, the latency between the first event content and the second event content is 1000 μs and the latency between the second event content and the third event content is 30 μs.
An event waiting threshold is preset, and the event waiting threshold is used for measuring the time interval between the events.
And when the waiting time is smaller than an event waiting threshold value, adjusting the event time corresponding to the (n+1) th event content to the event time corresponding to the Nth event content. In this embodiment, the set event waiting threshold is 50 μs, so only the waiting time between the second event content and the third event content is less than 50 μs, and therefore, the event time corresponding to the third event content is adjusted to the event time corresponding to the second event content, and the finally obtained adjustment event table is as follows:
further, in the obtained adjustment event table, the state is generally represented by the words "on", "off", "open" or "close", and the like, and the state represented by the words cannot be directly read by the singlechip, and occupies a relatively large memory. The singlechip is further required to interpret the event content when executing, so in this embodiment, the event content in the adjustment event table is compressed according to a preset compression algorithm to obtain a thyristor state value and a compression state table corresponding to each event content. In this embodiment, the compression algorithm is to replace event content with a smaller state value of the scr, so as to achieve the effect of fast execution of the singlechip. The thyristor state value may be a small byte, e.g., 1, 2. In the aspect of the control of the thyristor, the IO state value represented by bit 1 as bit 0 is used for representing the state value of the thyristor.
Specifically, when the event content is an opening event, the IO state value corresponding to the event content is bit 1; when the event content is a closing event, the IO state value corresponding to the event content is bit 0. The compressed table is as follows:
wherein, b1 represents a 1# silicon controlled rectifier, b2 represents a 2# silicon controlled rectifier, b3 represents a 3# silicon controlled rectifier, and so on, and b6 represents a 6# silicon controlled rectifier.
And finally, determining an event set corresponding to each event time according to the event time information. The event set includes the thyristor states of the respective thyristors at each event time. Because the opening time and the closing time adopted in the embodiment are taken as event time, each event time is adopted to be compared with the opening time and the closing time of each silicon controlled rectifier.
In a first implementation of this embodiment, for each event time, the event time is compared with the on time and the off time of each thyristor.
When the event time is smaller than the opening time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is in a closed state; when the event time is greater than or equal to the opening time corresponding to the silicon controlled rectifier and less than the closing time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is an opening state; and when the event time is smaller than or equal to the closing time corresponding to the controllable silicon, determining that the controllable silicon state corresponding to the controllable silicon is the closing state.
In a second implementation manner of this embodiment, event moments are ordered according to a sequence, and then, for each of the thyristors, an on state moment of the thyristor corresponding to the on state moment and an off state moment corresponding to the off state moment are determined. And then writing the event time before the opening time and the event time after the closing time into the thyristor state to be the closing state. At this time, the thyristor state value herein may employ the IO state value described previously.
In this embodiment, any one of the two modes is executed to obtain an event set corresponding to each event time, and the event set corresponding to each event time is expressed in a table form, where the unit of event time is μs, and the table is as follows:
and S40, executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon.
Specifically, after obtaining the event set corresponding to each event time, the operation corresponding to the event set can be executed at the time when executing a certain event set is expected.
In a first implementation manner of this embodiment, the singlechip presets a timer, and the timer carries out reminding at regular time according to the current event time. As the table above indicates, when the timer starts, the timer reminds the singlechip to execute the corresponding event set at 500 μs, executes the corresponding event set at 1500 μs, and so on, and executes the corresponding event set at 500 μs at 7500 μs. This approach can react quickly when the early time is still short, but with the time extension, the time counted by the timer can accumulate, resulting in a meaningless accumulation of data volume.
Therefore, in the second implementation manner of this embodiment, the loading time corresponding to the event set is calculated first according to the event time.
And calculating the time difference between the (M+1) th event time and the M th event time in the compression state table to obtain the loading time corresponding to the (M+1) th event time, wherein M is a positive integer, and the value of the loading time corresponding to the first event time is the value of the first event time. The following table is a table obtained after calculating the loading time:
therefore, the timer is interrupted for matching, and the time matching is carried out again after the execution of the singlechip is completed each time. When the ith event set is executed, the singlechip directly reads the state of the IO port of the silicon controlled rectifier to the hardware PIN at the loading time according to the loading time corresponding to the (i+1) th event set. The process is simple and convenient to operate, and no extra algorithm processing is needed, so that the load of the singlechip is small.
Because the content of the interrupt execution program is small and the execution time is short, the precision of the scheme can reach within 50 uS. Although the number of thyristors can be infinitely large in theory, the number of thyristors is optimal within 8 considering the effect of the actual hardware execution time and interrupt response.
As shown in fig. 2, based on the above-mentioned method for controlling a silicon controlled rectifier, the present embodiment provides a device 100 for controlling a silicon controlled rectifier, where the device 100 for controlling a silicon controlled rectifier includes:
the acquisition module is used for acquiring event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier;
the ordering module is used for ordering the event time information according to the event time to obtain an ordered event table;
the determining module is used for determining an event set corresponding to each event moment according to the ordering event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information;
and the execution module is used for executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon.
Wherein the determining module comprises:
the adjusting unit is used for adjusting the event time in the ordered event table according to a preset adjusting algorithm to obtain an adjusted event table;
the determining unit is used for determining an event set corresponding to each event time according to the event time information in the event adjustment table.
The adjusting unit is specifically configured to:
calculating the waiting time between the (n+1) th event content and the Nth event content according to the ordered event table, wherein N is a positive integer;
and when the waiting time is smaller than a preset event waiting threshold value, adjusting the event time corresponding to the (n+1) th event content to the event time corresponding to the Nth event content.
The determination module further includes a compression unit for:
and compressing event contents in the adjustment event table according to a preset compression algorithm to obtain a silicon controlled rectifier state value corresponding to each event content.
Wherein the thyristor state value comprises an IO state value; the compression unit is specifically configured to:
when the event content is an opening event, the IO state value corresponding to the event content is bit 1;
when the event content is a closing event, the IO state value corresponding to the event content is bit 0.
Wherein, the time moment comprises an opening moment and a closing moment; the determining unit is used for:
for each silicon controlled rectifier, when the event time is smaller than the corresponding opening time of the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is a closing state;
when the event time is greater than or equal to the opening time corresponding to the silicon controlled rectifier and less than the closing time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is an opening state;
and when the event time is smaller than or equal to the closing time corresponding to the controllable silicon, determining that the controllable silicon state corresponding to the controllable silicon is the closing state.
The execution unit is used for:
calculating loading time corresponding to the event set according to the event time;
and executing the operation corresponding to each state of the controllable silicon according to the loading time so as to control the state of each controllable silicon.
Based on the above-described method for controlling a thyristor, the present embodiment provides a computer-readable storage medium storing one or more programs executable by one or more processors to implement the steps in the method for controlling a thyristor as described in the above-described embodiment.
Based on the control method of the silicon controlled rectifier, the invention also provides a terminal device, as shown in fig. 3, which comprises at least one processor (processor) 20; a display screen 21; and a memory (memory) 22, which may also include a communication interface (Communications Interface) 23 and a bus 24. Wherein the processor 20, the display 21, the memory 22 and the communication interface 23 may communicate with each other via a bus 24. The display screen 21 is configured to display a user guidance interface preset in the initial setting mode. The communication interface 23 may transmit information. The processor 20 may invoke logic instructions in the memory 22 to perform the methods of the embodiments described above.
Furthermore, the logic instructions in the memory 22 described above may be implemented in the form of software functional units and may be stored in a computer-readable storage medium when sold or used as a stand-alone product.
The memory 22, as a computer readable storage medium, may be configured to store a software program, a computer executable program, such as program instructions or modules corresponding to the methods in the embodiments of the present disclosure. The processor 20 performs functional applications and data processing, i.e. implements the methods of the embodiments described above, by running software programs, instructions or modules stored in the memory 22.
The memory 22 may include a storage program area that may store an operating system, at least one application program required for functions, and a storage data area; the storage data area may store data created according to the use of the terminal device, etc. In addition, the memory 22 may include high-speed random access memory, and may also include nonvolatile memory. For example, a plurality of media capable of storing program codes such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk or an optical disk, or a transitory computer readable storage medium may be used.
In addition, the specific processes that the computer readable storage medium and the plurality of instruction processors in the terminal device load and execute are described in detail in the above method, and are not stated here.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A method for controlling a silicon controlled rectifier, the method comprising:
acquiring event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier;
sorting the event time information according to the event time to obtain a sorting event table;
determining an event set corresponding to each event moment according to the ordered event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information;
executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon;
the determining, according to the ordered event table, an event set corresponding to each event time includes:
according to a preset adjustment algorithm, adjusting event moments in the ordered event table to obtain an adjustment event table;
for each event time, determining an event set corresponding to the event time according to the event time information in the adjustment event table;
the event time comprises an opening time and a closing time; the determining, for each event time, an event set corresponding to the event time according to the event time information includes:
for each silicon controlled rectifier, when the event time is smaller than the corresponding opening time of the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is a closing state;
when the event time is greater than or equal to the opening time corresponding to the silicon controlled rectifier and less than the closing time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is an opening state;
and when the event time is smaller than or equal to the closing time corresponding to the controllable silicon, determining that the controllable silicon state corresponding to the controllable silicon is the closing state.
2. The method for controlling a silicon controlled rectifier according to claim 1, wherein the adjusting the event time in the ordered event table according to a preset adjustment algorithm, to obtain an adjusted event table includes:
calculating the waiting time between the (n+1) th event content and the Nth event content according to the ordered event table, wherein N is a positive integer;
and when the waiting time is smaller than a preset event waiting threshold value, adjusting the event time corresponding to the (n+1) th event content to the event time corresponding to the Nth event content.
3. The method for controlling a silicon controlled rectifier according to claim 1, wherein before determining an event set corresponding to each of the event times according to the event time information in the adjustment event table, the method further comprises:
and compressing event contents in the adjustment event table according to a preset compression algorithm to obtain a silicon controlled rectifier state value corresponding to each event content.
4. The method according to claim 1, wherein the thyristor state value includes an IO state value; compressing the event content in the adjustment event table according to a preset compression algorithm, and obtaining a state value of the silicon controlled rectifier corresponding to each event content includes:
when the event content is an opening event, the IO state value corresponding to the event content is bit 1;
when the event content is a closing event, the IO state value corresponding to the event content is bit 0.
5. The method according to any one of claims 1 to 4, wherein the performing an operation corresponding to the event set according to the event time to control the state of each of the thyristors includes:
calculating loading time corresponding to the event set according to the event time;
and executing the operation corresponding to each state of the controllable silicon according to the loading time so as to control the state of each controllable silicon.
6. A control device for a silicon controlled rectifier, the control device comprising:
the acquisition module is used for acquiring event time information corresponding to each pre-connected silicon controlled rectifier, wherein the event time information comprises event content and event time corresponding to each silicon controlled rectifier;
the ordering module is used for ordering the event time information according to the event time to obtain an ordered event table;
the determining module is used for determining an event set corresponding to each event moment according to the ordering event table, wherein the event set comprises a silicon controlled state corresponding to each piece of silicon controlled information;
the execution module is used for executing the operation corresponding to the event set according to the event time so as to control the state of each controllable silicon;
the determining, according to the ordered event table, an event set corresponding to each event time includes:
according to a preset adjustment algorithm, adjusting event moments in the ordered event table to obtain an adjustment event table;
for each event time, determining an event set corresponding to the event time according to the event time information in the adjustment event table;
the event time comprises an opening time and a closing time; the determining, for each event time, an event set corresponding to the event time according to the event time information includes:
for each silicon controlled rectifier, when the event time is smaller than the corresponding opening time of the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is a closing state;
when the event time is greater than or equal to the opening time corresponding to the silicon controlled rectifier and less than the closing time corresponding to the silicon controlled rectifier, determining that the state of the silicon controlled rectifier corresponding to the silicon controlled rectifier is an opening state;
and when the event time is smaller than or equal to the closing time corresponding to the controllable silicon, determining that the controllable silicon state corresponding to the controllable silicon is the closing state.
7. A computer-readable storage medium storing one or more programs executable by one or more processors to implement the steps in the method of controlling a silicon controlled rectifier as claimed in any one of claims 1 to 5.
8. A terminal device, comprising: a processor, a memory, and a communication bus; the memory has stored thereon a computer readable program executable by the processor;
the communication bus realizes connection communication between the processor and the memory;
the steps in the method for controlling a silicon controlled rectifier according to any one of claims 1 to 5 are realized when the processor executes the computer readable program.
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| CN202110950665.9A Active CN113722063B (en) | 2021-08-18 | 2021-08-18 | Control method of silicon controlled rectifier and related equipment |
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