CN113707579B - Semiconductor processing apparatus and control method thereof - Google Patents
Semiconductor processing apparatus and control method thereof Download PDFInfo
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- CN113707579B CN113707579B CN202111015141.7A CN202111015141A CN113707579B CN 113707579 B CN113707579 B CN 113707579B CN 202111015141 A CN202111015141 A CN 202111015141A CN 113707579 B CN113707579 B CN 113707579B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 151
- 230000008569 process Effects 0.000 claims abstract description 41
- 238000005452 bending Methods 0.000 claims abstract description 15
- 230000006698 induction Effects 0.000 claims description 41
- 230000007246 mechanism Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 189
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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Abstract
The application discloses semiconductor process equipment and a control method thereof, wherein the semiconductor process equipment comprises a process chamber, a first heating component, a first sensor, a first control module and a second heating component, the process chamber comprises a cavity and a bearing seat, the bearing seat is arranged in the cavity and is used for bearing a wafer, and the first sensor is used for detecting the bending degree of the wafer; the first heating assembly and the second heating assembly are respectively arranged on two sides of the cavity along the axial direction, the second heating assembly is used for heating the wafer from the second side of the bearing seat, the first control module controls the first heating assembly to face the first side of the bearing seat to carry out compensation heating on the wafer according to the bending degree, and the first side and the second side are distributed in a back-to-back mode. The problem that the wafer has defects in epitaxial growth due to the fact that the temperature difference between the first side and the second side is large can be solved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to semiconductor process equipment and a control method thereof.
Background
The silicon wafer epitaxial growth process is a process for growing monocrystalline silicon with certain thickness and same lattice arrangement as the original substrate on a monocrystalline silicon substrate, and the silicon wafer epitaxial growth process needs to be carried out in a process chamber of semiconductor process equipment.
The silicon wafer epitaxial growth process requires the silicon wafer to be carried out at a certain temperature. The silicon wafer is arranged on a bearing seat in the process chamber. When the silicon wafer is heated, the silicon wafer only heats one side of the silicon wafer through heat conduction of the bearing seat, and the other side of the silicon wafer is heated through heat reflected by the inner cavity. Because the temperature difference at the two sides of the silicon wafer is large, the silicon wafer can generate a warping phenomenon, so that the silicon wafer is unevenly distributed along the radial temperature, and the epitaxial growth of the silicon wafer has defects.
Disclosure of Invention
The invention discloses semiconductor process equipment and a control method thereof, which are used for solving the problem that a wafer has defects in epitaxial growth due to larger temperature difference between a first side and a second side.
In order to solve the technical problems, the invention is realized as follows:
In a first aspect, the application discloses a semiconductor process device, comprising a process chamber, a first heating component, a first sensor, a first control module and a second heating component, wherein the process chamber comprises a cavity and a bearing seat, the bearing seat is arranged in the cavity and is used for bearing a wafer, and the first sensor is used for detecting the bending degree of the wafer;
The first heating component and the second heating component are respectively arranged on two sides of the cavity along the axial direction, the second heating component is used for heating the wafer from the second side of the bearing seat, the first control module controls the first heating component to carry out compensation heating towards the first side of the bearing seat according to the bending degree, and the first side and the second side are distributed in a back-to-back mode.
In a second aspect, the present application also discloses a control method of the semiconductor process equipment, where the semiconductor process equipment is the semiconductor process equipment in the first aspect, and the control method includes:
detecting the bending degree of the wafer;
Reading a first temperature compensation value of a first side of a wafer corresponding to the warpage according to Qu Qiaodu;
and controlling the first heating component to heat the wafer from the first side to the second side so that the temperature difference between the first side and the second side is within a first preset temperature difference range.
The technical scheme adopted by the invention can achieve the following technical effects:
According to the semiconductor process equipment disclosed by the application, the cavity is arranged, so that the bearing seat can be arranged in the cavity, and further, the bearing seat can bear wafers; by arranging the second heating component, the second heating component can heat the wafer from the second side; the bending degree of the wafer is detected through the first sensor, so that the first control module can control the first heating component to carry out compensation heating towards the first side-direction wafer of the bearing seat according to the detected bending degree, the first heating component and the second heating component heat two sides of the wafer opposite to each other, the problem that the temperature difference between the first side and the second side of the wafer is large due to the fact that semiconductor process equipment heats the wafer from one side only is avoided, the problem that the bending degree is large due to the fact that the temperature difference between the two sides of the wafer is large is effectively relieved, and finally the problem that the wafer is caused to have defects due to uneven radial temperature distribution of the wafer is effectively relieved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a reflecting member according to an embodiment of the present invention, wherein the direction indicated by the arrow in FIG. 2 is the heat direction;
FIG. 3 is a schematic view of a transparent area according to an embodiment of the present invention;
Fig. 4 is a schematic diagram illustrating the cooperation between a wafer and a carrier according to an embodiment of the present invention.
Reference numerals illustrate:
100-cavity, 110-transparent region,
200-Bearing seat, 210-bearing part, 220-rotary support column,
300-First heating element, 310-first electromagnetic coil, 320-induction heating element,
410-Reflector, 420-driving mechanism,
500-A first sensor,
600-Temperature sensor,
700-Upper cover,
800-A second heating component,
900-Wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
Referring to fig. 1-4, an embodiment of the present invention discloses a semiconductor processing apparatus that may be used to process a wafer 900. The semiconductor processing apparatus includes a process chamber, a first heating assembly 300, a first sensor 500, a first control module, and a second heating assembly 800. The process chamber includes a chamber body 100 and a carrier 200, the chamber body 100 can provide a place for processing the wafer 900, and the chamber body 100 also provides a foundation for mounting the carrier 200. The carrier 200 is disposed in the chamber 100, and the carrier 200 is used for carrying a wafer 900. The carrier 200 may be disposed at the bottom of the cavity 100.
The first heating assembly 300 and the second heating assembly 800 are disposed at both sides of the cavity 100 in the axial direction, respectively. The axial direction may be a direction parallel to the bearing surface of the bearing seat 200. The second heating assembly 800 is used to heat the wafer 900 from the second side of the susceptor 200. The second heating element 800 heats the wafer 900 from the second side such that the temperature of the wafer 900 reaches the temperature required for processing, and the primary heat source for heating the wafer 900 is from the second heating element 800.
The first sensor 500 is used for detecting Qu Qiaodu of the wafer 900, and the first control module controls the first heating assembly 300 to perform compensation heating towards the first side of the carrier 200 to the wafer 900 according to the detected warpage, and the first side and the second side are distributed in opposite directions. The first and second sides referred to herein may also be the first and second sides of the corresponding wafer 900.
When only the second heating element 800 heats the wafer 900, during processing of the wafer 900, there is a temperature difference between the first side and the second side of the wafer 900, since the heat of the second side of the wafer 900 is directly from the second heating element 800, and the heat of the first side of the wafer 900 is mainly from the temperature of the chamber 100 itself and the temperature reflected by the inner wall of the chamber 100. Due to the temperature difference between the first side and the second side of the wafer 900 and the gravity of the wafer 900, the wafer 900 may bend, which is referred to as warpage of the wafer 900.
The warpage of wafer 900 may be determined by inspection. Specifically, when the wafer 900 does not have a warpage phenomenon, the distance between the center of the wafer 900 and the carrier 200 is measured, and then the distance between the center of the wafer 900 and the carrier 200 is measured at different warpage degrees. Different distances between the center of the wafer 900 and the carrier 200, which correspond to different warpage degrees obtained through experiments, may be pre-stored in the first control module. The first sensor 500 may obtain a corresponding warpage by detecting a distance from the center of the wafer 900 to the susceptor 200.
According to the experiment, the temperature difference between the first side and the second side of the wafer 900 corresponding to the wafer 900 at different warpage levels may be obtained, where the first side and the second side of the wafer 900 have different temperature differences at different warpage levels, and the temperature difference is a first temperature compensation value of the first side of the wafer 900 relative to the second side, and the relationship between the warpage level of the wafer 900 and the first temperature compensation value may be pre-stored in the first control module.
Specifically, the first control module may obtain a first temperature compensation value of the first side of the wafer 900 with respect to the second side according to the warpage, and further may control the first heating assembly 300 to perform compensation heating towards the first side of the carrier 200 to the wafer 900, where the temperature value of the compensation heating is the first temperature compensation value.
The first heating assembly 300 may be a heat generating coil that generates heat by energizing the heat generating coil to compensate for heating the wafer 900 from the first side. The first heating assembly 300 may also be a heating plate, where the heating plate is attached to a top wall of the cavity 100, and the top wall is opposite to the bearing surface of the bearing seat 200, and after the heating plate heats, heat is transferred to the top wall, and the top wall performs compensation heating on the wafer 900 from the first side.
The second heating assembly 800 may also be a heat generating coil that generates heat to heat the wafer 900 from the second side by energizing the heat generating coil. The second heating element 800 may also heat the susceptor 200, and the susceptor 200 heats the wafer 900 from the second side.
In a specific implementation process, the carrier 200 is disposed in the cavity 100, the carrier 200 is used for carrying the wafer 900, the second heating element 800 heats the wafer from the second side, the first sensor 500 detects Qu Qiaodu of the wafer 900, and the first control module controls the first heating element 300 to perform compensation heating towards the first side of the carrier 200 to the wafer 900 according to the detected warpage.
According to the semiconductor process equipment disclosed by the application, the cavity 100 is arranged, so that the bearing seat 200 can be arranged in the cavity 100, and the bearing seat 200 can bear the wafer 900; by providing the second heating assembly 800, the second heating assembly 800 may heat from the second side to the wafer 900; the first sensor 500 is used for detecting the bending degree of the wafer 900, so that the first control module can control the first heating assembly 300 to perform compensation heating towards the first lateral wafer 900 of the bearing seat 200 according to the detected bending degree, so that the first heating assembly 300 and the second heating assembly 800 heat two opposite sides of the wafer 900, the problem that semiconductor process equipment heats the wafer 900 only from one side to cause larger temperature difference between the first side and the second side of the wafer 900 is avoided, the problem that the bending degree is larger due to larger temperature difference between the two sides of the wafer 900 is effectively relieved, and finally the problem that the wafer 900 is grown epitaxially and has defects due to uneven radial temperature distribution of the wafer 900 is effectively relieved.
Further, the first heating assembly 300 may include a first electromagnetic coil 310 and an induction heating element 320. The induction heating element 320 is disposed at an outer side of the cavity 100 and opposite to the carrier 200, and the first electromagnetic coil 310 is disposed at a side of the induction heating element 320 facing away from the cavity 100. The first electromagnetic coil 310 may generate a magnetic field when energized, the induction heating element 320 generates heat in the magnetic field generated by the first electromagnetic coil 310, and the induction heating element 320 transfers the heat to the ceiling of the chamber 100, and then heats the wafer 900 from the first side through the ceiling. Specifically, the material of the induction heating element 320 may be a material that inductively heats in a magnetic field. Materials that can be inductively heated in a magnetic field are disclosed, and the particular material of the inductive heating element 320 can be selected as desired. The induction heating element 320 may cover the susceptor 200.
By arranging the first heating assembly 300 to have a structure including the first electromagnetic coil 310 and the induction heating element 320, a magnetic field is generated after the first electromagnetic coil 310 is electrified, so that the induction heating element 320 generates heat in the magnetic field, and the heat of the induction heating element 320 is transferred to the top wall of the cavity 100, thereby realizing temperature compensation of the wafer 900 from the first side; by using the first electromagnetic coil 310, the heating condition of the induction heating element 320 can be controlled only by controlling the on-off of the first electromagnetic coil 310, so that the heating control of the wafer 900 from the first side is simpler and more effective; the first electromagnetic coil 310 and the induction heating element 320 are arranged outside the cavity 100, so that the medium for processing the wafer 900 in the cavity 100 can be effectively prevented from adhering to the first electromagnetic coil 310 and the induction heating element 320, and meanwhile, the first electromagnetic coil 310 and the induction heating element 320 are maintained.
Further, the first control module is connected to the first sensor 500 and the first electromagnetic coil 310, respectively, and controls the heating power of the first electromagnetic coil 310 according to the warpage of the wafer 900, so that the temperature difference between the first side and the second side of the wafer 900 is within a first preset temperature difference range. The first preset temperature difference range is that when the wafer 900 is processed in the cavity, a temperature difference exists between the first side and the second side of the wafer 900, the temperature difference between the first side and the second side of the wafer 900 is within a certain range, the processing of the wafer 900 can meet the processing state, and the temperature difference between the first side and the second side of the wafer 900 meeting the processing state is the first preset temperature difference range.
The first sensor 500 is connected with the first electromagnetic coil 310 through the first control module, so that the heating power of the first electromagnetic coil 310 can be controlled according to the bending degree, and the temperature difference between the first side and the second side of the wafer 900 is in the first preset temperature difference range, thereby effectively improving the accuracy of temperature compensation of the first electromagnetic coil 310 on the first side of the wafer 900.
The induction heating element 320 generates heat in the magnetic field of the first electromagnetic coil 310 to heat the ceiling of the chamber 100, and the ceiling of the chamber 100 may heat the wafer 900 from the first side. The induction heating element 320 may be a cylindrical structure having a diameter of 300mm, and the induction heating element 320 may be an area covering only the wafer 900. By changing the power of the first electromagnetic coil 310, the strength of the magnetic field generated by the first electromagnetic coil 310 can be changed, and thus the heating condition of the induction heating element 320 can be adjusted, so as to achieve the effect of adjusting the temperature of the wafer 900 from the first side. The induction heating element 320 may be a transparent ceramic cover plate that is inductively heated in a magnetic field, however, the induction heating element 320 may be other material structures, and is not limited thereto.
When the wafer 900 is processed, due to a certain warpage, the wafer 900 has a certain temperature difference along the radial direction of the carrier 200, so that dislocation slip phenomenon can occur when the wafer 900 is processed. In order to alleviate the dislocation slip phenomenon, an alternative embodiment may be provided in the chamber 100, where the transparent region 110 is provided with the induction heating element 320 disposed on the transparent region 110, and the induction heating element 320 is a transparent element, and the transparent region 110 is disposed opposite to the carrier 200. Specifically, the transparent region 110 may be a circular region covering the susceptor 200. The transparent region 110 may also be a long strip structure along the radial direction of the carrier 200, and the wafer 900 may be rotated to face the transparent region 110 due to the rotation of the carrier 200 in the chamber 100 during processing of the wafer 900.
The semiconductor processing apparatus may further include a reflecting member 410 and a driving mechanism 420, the reflecting member 410 may be disposed outside the cavity 100 and opposite to the transparent region 110, the driving mechanism 420 may be in driving connection with the reflecting member 410, the driving mechanism 420 may be used to drive the reflecting member 410 to rotate, and the reflecting member 410 may be used to reflect heat projected thereon. Specifically, the heat source reflected by the reflecting member 410 may be the heat generated by the second heating element 800, the heat generated by the first heating element 300, or the heat generated by the first heating element 300 and the second heating element 800 together, and the reflected heat may be infrared light. The heat reflected by the reflecting member 410 may be used to heat the wafer 900 from the first side in the radial direction of the susceptor 200 through the induction heating member 320 and the transparent region 110. Specifically, the experiment obtains the temperatures of the wafer 900 at different concentric circles of the carrier 200, obtains the relative temperature differences at the different concentric circles, and heats the wafer 900 at the positions along the radial direction of the carrier 200, that is, the positions where the relative temperature differences are required to be obtained so that the temperatures at the different concentric circles are the same.
According to the experiment, the wafer 900 has concentric circles with different diameters on the carrier 200 under different warpage, the concentric circles with different diameters have different intersecting points with the wafer 900 along the radial direction of the carrier 200, and by detecting the resistance values at the different intersecting points along the radial direction of the carrier 200, the temperature difference of the wafer 900 along the radial direction of the carrier 200 can be obtained, where the temperature difference is the second temperature compensation value. The heat reflected by the reflecting member 410 heats the wafer 900 along the radial direction of the susceptor 200 from the first side, so that the wafer 900 obtains the temperature of the second temperature compensation value where heating is required.
In particular, the driving mechanism 420 may be a hydraulic expansion member, a pneumatic expansion member, a shape memory alloy, etc., and embodiments of the present application are not limited to the specific kind of driving mechanism.
By providing the transparent region 110 on the cavity 100, the induction heating element 320 is disposed in the transparent region 110, and the induction heating element 320 is a transparent element, so that heat outside the cavity 100 can heat the wafer 900 from the first side through the transparent region 110 and the induction heating element 320; through the reflecting element 410 and the driving mechanism 420, the reflecting element 410 rotates to different angles under the action of the driving mechanism 420, so that the heat reflected by the reflecting element 410 can heat different positions of the wafer 900 along the radial direction of the carrier 200 from the first side through the transparent area 110 and the induction heating element 320, and the problem that the temperature difference of the wafer 900 along the radial direction of the carrier 200 is large can be effectively alleviated.
Further, the reflecting member 410 may be a convex lens. According to the focusing characteristic of the convex lens, the convex lens has the function of focusing energy, so that the temperature adjusting capability of the wafer 900 along the radial direction of the bearing seat 200 can be improved.
Further, the semiconductor processing apparatus may further include an upper cover 700, the upper cover 700 is disposed outside the chamber 100, the upper cover 700 may enclose an accommodating space with a top wall of the chamber 100, the reflective member 410 may be disposed in the accommodating space, and the reflective member 410 may be disposed on top of the upper cover 700. The upper cover 700 can effectively collect the heat radiated by the first heating assembly 300 and the second heating assembly 800 in the accommodating space, so that the heat reflected by the reflecting element 410 can meet the requirement of heating the wafer 900, and the upper cover 700 can also protect the components such as the reflecting element 410 installed in the accommodating space. Specifically, the upper cover can be an arc cover, and the arc cover can improve the heat convergence effect and reduce the occupation of space.
In an alternative embodiment, the carrier 200 may be provided with a plurality of carrying portions 210, where the carrying portions 210 may be disposed opposite to the transparent region 110, and the carrying portions 210 are used to carry the wafer 900. The specific bearing portion 210 may be a groove structure or a boss structure, and the specific structure of the bearing portion 210 is not limited herein. The carrying portions 210 are rotatably disposed in the chamber, and the plurality of carrying portions 210 are arranged in an annular array along a central axis of the carrying base 200. The transparent region 110 may also have an annular structure, and a central region surrounded by the annular transparent region 110 and an outer region outside the annular transparent region 110 may be a gold-plated region. The transparent region 110 may be disposed opposite to the bearing portion 210 and cover the plurality of bearing portions 210, and the reflecting member 410 may be located on a central axis of the transparent region 110.
By arranging the plurality of carrying parts 210 on the carrying seat 200, the carrying seat 200 can carry a plurality of wafers 900 at the same time, so that the process efficiency can be effectively improved; the carrying parts 210 are rotatably disposed in the cavity 100, and the plurality of carrying parts 210 are arranged in an annular array with the central axis of the carrying seat 200, so that the wafer 900 can rotate along with the carrying parts 210 during processing, and further the processing of the wafer 900 in the cavity 100 is more uniform. The transparent area 110 is configured as an annular structure, so that the transparent area 110 can be disposed opposite to the bearing portion 210, and the heat reflected by the reflecting element 410 can be reflected to a position of the wafer 900, which needs to be heated, along the radial direction of the bearing seat 200 by the transparent area 110; the center of the annular transparent region 110 is not configured as a transparent structure, so that heat dissipation in the cavity 100 through the central transparent structure can be effectively reduced, and further energy consumption can be reduced.
Specifically, the annular transparent region 110 is a placement region covering the wafer 900, the diameter of the annular transparent region 110 may be 200mm to 300mm, and the center of the annular transparent region 110 is a placement region of 40mm to 50mm without the wafer 900.
Further, the bottom of the carrier 200 may be provided with a rotating support 220, the rotating support 220 may be fixedly connected with the carrier 200, and the rotating support 220 may rotate to drive the carrier 200 to rotate together, so that the carrier 210 is rotatably disposed in the cavity 100, and thus the wafer 900 may be processed in a rotatable manner when being processed in the cavity 100, so as to improve the processing uniformity of the wafer 900. Of course, the rotating strut 220 may be driven by another drive mechanism.
Further, the bearing portion 210 may be a ground arc groove recessed toward the inside of the bearing seat 200, and the first sensor 500 is disposed at a central position of a bottom of the arc groove. Through setting up carrier 210 into the cambered surface recess for wafer 900 can be firm set up in the cambered surface recess, and then make wafer 900 can not break away from carrier 200 when rotatory, locate the bottom central point of cambered surface recess with first sensor 500 put simultaneously, make the crooked degree of detecting wafer 900 more accurate.
Further, the first control module may further control the driving mechanism 420 to drive the reflecting member 410 to rotate according to the warpage, so that the heat reflected by the reflecting member 410 heats the wafer 900 from the first side to the radial direction of the susceptor, so that the temperature difference of the wafer 900 along the radial direction of the susceptor 200 is within the second preset temperature difference range.
The second preset temperature difference range can be obtained through experiments, when the wafer 900 is processed, a certain temperature difference exists between the temperature of the wafer 900 along the radial direction of the bearing seat 200 within a certain range, and the processing requirement of the wafer 900 can be met. The temperature difference range of the wafer 900 along the radial direction of the carrier 200, which meets the processing requirements, is a second preset temperature difference range.
The first control module may control the first heating assembly 300 to compensate and heat the wafer 900 from the first side through the warpage, and control the reflector 410 to control the temperature of the wafer 900 along the radial direction of the carrier 200, so that the temperature adjustment capability of the wafer 900 is more accurate and the efficiency is higher.
The second heating assembly 800 may include a second electromagnetic coil disposed outside the cavity 100 and on a side of the carrier 200 facing away from the first heating assembly. The susceptor 200 may be made of an inductively heatable material, and may generate heat in a magnetic field generated when the second electromagnetic coil is energized, so that the susceptor 200 heats the wafer 900 from the second side, for example, the susceptor 200 may be graphite inductively heated in the induced magnetic field. Of course, the second heating assembly 800 may also be an infrared light heating element.
The semiconductor processing apparatus may further include a temperature sensor 600 and a second control module, the temperature sensor 600 to detect an actual temperature of a center of the wafer 900, which may be a temperature of a center of the first side of the wafer 900. The second control module is connected to the temperature sensor 600 and the second electromagnetic coil, respectively, and controls the heating power of the second electromagnetic coil according to the actual temperature of the center of the wafer 900, so that the actual temperature of the center of the wafer 900 reaches a preset temperature value.
The preset temperature value is a temperature value to be reached by the wafer 900 at the time of processing, and is a temperature value obtained in advance at the time of processing the wafer 900. The temperature sensor 600 is arranged to detect the temperature of the center of the wafer 900, so that the second control module can control the heating power of the second electromagnetic coil according to the feedback of the temperature sensor 600, and the actual temperature of the center of the wafer 900 can accurately reach the preset temperature value through feedback adjustment.
Based on the semiconductor process equipment disclosed in the embodiment of the application, the embodiment of the application discloses a control method of the semiconductor process equipment, which can comprise a process chamber, a first heating component 300, a first sensor 500, a first control module and a second heating component 800, wherein the process chamber comprises a cavity 100 and a bearing seat 200, the bearing seat 200 is arranged in the cavity 100 and is used for bearing a wafer 900, and the first sensor 500 is used for detecting the bending degree of the wafer 900;
The first heating element 300 and the second heating element 800 are respectively disposed at two sides of the cavity 100 along the axial direction, the second heating element 800 is configured to heat the wafer 900 from the second side of the carrier 200, and the first control module controls the first heating element 300 to perform compensation heating towards the first side of the carrier 200 to the wafer 900 according to the warpage, and the first side and the second side are opposite to each other.
The disclosed control method of the semiconductor process equipment may include:
detecting the warpage of the wafer 900;
reading a first preset temperature difference range of a first side and a second side of the wafer 900 corresponding to the warpage according to Qu Qiaodu;
The first preset temperature difference range is that when the wafer 900 is processed in the cavity, a temperature difference exists between the first side and the second side of the wafer 900, the temperature difference between the first side and the second side of the wafer 900 is within a certain range, the processing of the wafer 900 can meet the processing state, and the temperature difference between the first side and the second side of the wafer 900 meeting the processing state is the first preset temperature difference range.
Reading a preset first temperature compensation value of the first side of the wafer 900 corresponding to the warpage according to Qu Qiaodu;
according to the experiment, the temperature difference between the first side and the second side of the wafer 900 corresponding to the wafer 900 at different warpage levels may be obtained, where the first side and the second side of the wafer 900 have different temperature differences at different warpage levels, and the temperature difference is a first temperature compensation value of the first side of the wafer 900 relative to the second side.
The first heating assembly 300 is controlled to heat the wafer 900 from the first side, and the first side obtains temperature compensation of the first temperature compensation value, so that the temperature difference between the first side and the second side is within the first preset temperature difference range.
By detecting the warpage of the wafer 900, a first preset temperature difference between the first side and the second side of the wafer 900 and a first temperature compensation value of the first side can be obtained under the corresponding warpage, so that the first heating assembly 300 is controlled to heat the first side of the wafer 900, and the first side of the wafer 900 is subjected to temperature compensation of the first temperature compensation value, so that the temperature difference between the first side and the second side is within the first preset temperature difference range, and the problem that the wafer 900 is defective in processing due to the fact that the temperature difference between the first side and the second side of the wafer 900 is not within the first preset temperature difference range is effectively solved.
In an alternative embodiment, the first heating assembly 300 includes a first electromagnetic coil 310 and an induction heating element 320, the induction heating element 320 is disposed on the outer side of the cavity 100 and opposite to the carrier 200, the first electromagnetic coil 310 is disposed on a side of the induction heating element 320 facing away from the cavity 100, wherein:
When the first electromagnetic coil 310 is energized, the induction heating element 320 generates heat in a magnetic field generated by the first electromagnetic coil 310 to heat the wafer 900 from the first side.
The cavity 100 is provided with a transparent area 110, the induction heating element 320 is arranged on the transparent area 110, the induction heating element 320 is a transparent element, and the transparent area 110 is arranged opposite to the bearing seat 200;
the semiconductor processing apparatus further includes a reflecting member 410 and a driving mechanism 420, wherein the reflecting member 410 is disposed outside the cavity 100 and opposite to the transparent region 110, the driving mechanism 420 is used for driving the reflecting member 410 to rotate, the reflecting member 410 is used for reflecting heat projected thereon, and the heat reflected by the reflecting member 410 is used for heating the wafer 900 from the first side along the radial direction of the susceptor 200 through the induction heating member 320 and the transparent region 110.
The control method of the semiconductor process equipment further comprises the following steps:
Reading a preset second temperature compensation value of the wafer 900 corresponding to the warpage according to Qu Qiaodu along the radial direction of the carrier 200;
According to the experiment, the wafer 900 has concentric circles with different diameters on the carrier 200 under different warpage, the concentric circles with different diameters have different intersecting points with the wafer 900 along the radial direction of the carrier 200, and by detecting the resistance values at the different intersecting points along the radial direction of the carrier 200, the temperature difference of the wafer 900 along the radial direction of the carrier 200 can be obtained, where the temperature difference is the second temperature compensation value. Here, the temperature difference may be obtained through experiments according to the resistance values at the different phase points, for example, the resistance values at the different phase points are obtained when the temperature difference does not exist in the radial direction of the carrier 200 for the wafer 900, and then the resistance values when the temperature difference exists in the radial direction of the carrier 200 for the wafer 900 are obtained. Through the corresponding relation between the resistance value and the temperature, the temperature at the corresponding position can be obtained by detecting the resistance value.
And reading a second preset temperature difference range of the wafer 900 corresponding to the warpage according to Qu Qiaodu, wherein the second preset temperature difference range is along the radial direction of the bearing seat.
The second preset temperature difference range can be obtained through experiments, when the wafer 900 is processed, a certain temperature difference exists between the temperature of the wafer 900 along the radial direction of the bearing seat 200 within a certain range, and the processing requirement of the wafer 900 can be met. The temperature difference range of the wafer 900 along the radial direction of the carrier 200, which meets the processing requirements, is a second preset temperature difference range.
The reflector 410 is controlled to rotate according to the second temperature compensation value, and the reflected heat is heated from the first side to the wafer 900 along the radial direction of the susceptor 200, so that the temperature difference of the wafer 900 along the radial direction of the susceptor 200 is within the second preset temperature difference range.
By detecting the warpage of the wafer 900, a second temperature compensation value and a second preset temperature difference of the wafer 900 along the radial direction of the carrier 200 of the wafer 900 under the corresponding warpage can be obtained, so that the wafer 900 is heated along the radial direction of the carrier 200 to obtain the temperature compensation of the second temperature compensation value, and the temperature difference of the wafer 900 along the radial direction of the carrier 200 is within a second preset range, thereby effectively alleviating the problem of processing defects caused by the larger temperature difference of the wafer 900 along the radial direction of the carrier 200.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (10)
1. A semiconductor processing apparatus, comprising: the wafer processing device comprises a process chamber, a first heating assembly (300), a first sensor (500), a first control module and a second heating assembly (800), wherein the process chamber comprises a cavity (100) and a bearing seat (200), the bearing seat (200) is arranged in the cavity (100) and is used for bearing a wafer (900), and the first sensor (500) is used for detecting the bending degree of the wafer (900);
The first heating component (300) and the second heating component (800) are respectively arranged at two sides of the cavity (100) along the axial direction, the second heating component (800) is used for heating the wafer (900) from the second side of the bearing seat (200), the first control module controls the first heating component (300) to perform compensation heating towards the first side of the bearing seat (200) to the wafer (900) according to the bending degree, and the first side and the second side are distributed in a back-to-back manner;
The cavity (100) is provided with a transparent area (110), the first heating component (300) is arranged on the transparent area (110), and the transparent area (110) is opposite to the bearing seat (200);
The semiconductor process equipment further comprises a reflecting piece (410) and a driving mechanism (420), wherein the reflecting piece (410) is arranged outside the cavity (100) and opposite to the transparent area (110), the driving mechanism (420) is used for driving the reflecting piece (410) to rotate, and the reflecting piece (410) is used for reflecting heat projected on the reflecting piece.
2. The semiconductor processing apparatus of claim 1, wherein the first heating assembly (300) comprises a first electromagnetic coil (310) and an induction heating element (320), the induction heating element (320) being disposed outside of the cavity (100) and opposite the carrier (200), the first electromagnetic coil (310) being disposed on a side of the induction heating element (320) facing away from the cavity (100), wherein:
When the first electromagnetic coil (310) is energized, the induction heating element (320) generates heat in a magnetic field generated by the first electromagnetic coil (310) to heat the wafer (900) from the first side.
3. The semiconductor processing apparatus of claim 2, wherein the first control module is coupled to the first sensor (500) and the first electromagnetic coil (310), respectively, and wherein the first control module controls the heating power of the first electromagnetic coil (310) according to the warpage so that the temperature difference between the first side and the second side is within a first preset temperature difference range.
4. The semiconductor processing apparatus of claim 2, wherein the induction heating element (320) is disposed on the transparent region (110), and the induction heating element (320) is a transparent element;
The heat reflected by the reflecting member (410) is used for heating the wafer (900) from the first side to the transparent region (110) along the radial direction of the bearing seat (200) through the induction heating member (320).
5. The semiconductor processing apparatus of claim 4, wherein said reflective member (410) is a convex lens.
6. The semiconductor processing apparatus according to claim 4, wherein the carrier (200) is provided with a plurality of carrier portions (210), the carrier portions (210) are configured to carry the wafer (900), the carrier portions (210) are rotatably disposed in the cavity (100), the plurality of carrier portions (210) are in an annular array with a central axis of the carrier (200), the transparent area (110) is in an annular structure, the transparent area (110) is disposed opposite to the carrier portions (210) and covers the plurality of carrier portions (210), and the reflecting member (410) is located on the central axis of the transparent area (110).
7. The semiconductor processing apparatus of claim 6, wherein the carrier (210) is a cambered surface groove formed by recessing toward the inside of the carrier (200), and the first sensor (500) is disposed at a bottom center position of the cambered surface groove.
8. The semiconductor processing apparatus of claim 6, wherein the first control module further controls the driving mechanism (420) to drive the reflecting member (410) to rotate according to the warpage, so that heat reflected by the reflecting member (410) from the first side to the wafer (900) is heated along the radial direction of the carrier (200), and a temperature difference of the wafer (900) along the radial direction of the carrier (200) is within a second preset temperature difference range.
9. The semiconductor processing apparatus of claim 1, wherein the second heating assembly (800) comprises a second electromagnetic coil disposed outside the chamber (100) and on a side of the carrier (200) facing away from the first heating assembly (300), the carrier (200) being of an inductively heatable material that heats in a magnetic field generated when the second electromagnetic coil is energized to cause the carrier (200) to heat the wafer (900) from the second side;
the semiconductor process equipment comprises a temperature sensor (600) and a second control module, wherein the temperature sensor (600) is used for detecting the actual temperature of the center of the wafer (900), the second control module is respectively connected with the temperature sensor (600) and the second electromagnetic coil, and the second control module controls the heating power of the second electromagnetic coil according to the actual temperature so as to enable the actual temperature to reach a preset temperature value.
10. A control method of a semiconductor process apparatus according to claim 1, characterized in that the process apparatus is the semiconductor process apparatus, the control method comprising:
detecting a warpage of the wafer (900);
Reading a preset first temperature compensation value corresponding to the Qu Qiaodu on the first side of the wafer (900) according to the Qu Qiaodu;
controlling the first heating assembly (300) to heat the wafer (900) from the first side so that a temperature difference between the first side and the second side is within a first preset temperature difference range;
The control method further includes:
Reading a second preset temperature compensation value of the wafer (900) corresponding to the Qu Qiaodu along the radial direction of the bearing seat (200) according to the Qu Qiaodu;
And controlling the reflector (410) to rotate according to the second temperature compensation value, and heating the reflected heat from the first side to the wafer (900) along the radial direction of the bearing seat (200) so that the temperature difference of the wafer (900) along the radial direction of the bearing seat (200) is within a second preset temperature difference range.
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| CN115101470A (en) * | 2022-07-28 | 2022-09-23 | 北京北方华创微电子装备有限公司 | Wafer carrier device, semiconductor process equipment and control method thereof |
| TWI842543B (en) * | 2023-05-25 | 2024-05-11 | 力晶積成電子製造股份有限公司 | Detection method for heater |
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