CN113707579A - Semiconductor processing equipment and control method thereof - Google Patents
Semiconductor processing equipment and control method thereof Download PDFInfo
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- CN113707579A CN113707579A CN202111015141.7A CN202111015141A CN113707579A CN 113707579 A CN113707579 A CN 113707579A CN 202111015141 A CN202111015141 A CN 202111015141A CN 113707579 A CN113707579 A CN 113707579A
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Abstract
本申请公开一种半导体工艺设备及其控制方法，所述半导体工艺设备包括工艺腔室、第一加热组件、第一传感器、第一控制模块和第二加热组件，所述工艺腔室包括腔体和承载座，所述承载座设置于所述腔体内，用于承载晶圆，所述第一传感器用于检测所述晶圆的曲翘度；所述第一加热组件和所述第二加热组件沿轴向分别设置于所述腔体的两侧，所述第二加热组件用于从所述承载座的第二侧对所述晶圆加热，所述第一控制模块根据所述曲翘度控制所述第一加热组件朝向所述承载座的第一侧向所述晶圆进行补偿加热，所述第一侧与所述第二侧相背分布。上述方案可以解决晶圆由于第一侧和第二侧温差较大，而导致晶圆在外延生长时存在缺陷的问题。
The present application discloses a semiconductor process equipment and a control method thereof, the semiconductor process equipment includes a process chamber, a first heating component, a first sensor, a first control module and a second heating component, the process chamber includes a cavity and a bearing seat, the bearing seat is arranged in the cavity for bearing a wafer, the first sensor is used to detect the warpage of the wafer; the first heating assembly and the second heating element The components are respectively arranged on both sides of the cavity in the axial direction, the second heating component is used for heating the wafer from the second side of the carrier, and the first control module is used to heat the wafer according to the warpage The first heating element is controlled to perform compensation heating to the wafer toward the first side of the carrier, and the first side and the second side are distributed away from each other. The above solution can solve the problem that the wafer has defects during epitaxial growth due to the large temperature difference between the first side and the second side of the wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to semiconductor process equipment and a control method thereof.
Background
The epitaxial growth process of the silicon wafer is a process for growing the monocrystalline silicon with a certain thickness and the same lattice arrangement as the original substrate on the monocrystalline silicon substrate, and the epitaxial growth process of the silicon wafer needs to be carried out in a process chamber of semiconductor process equipment.
The epitaxial growth process of the silicon wafer needs the silicon wafer to be carried out at a certain temperature. The silicon chip is arranged on a bearing seat in the process chamber. When the silicon wafer is heated, the silicon wafer is heated only through heat conduction of one side of the silicon wafer by the bearing seat, the other side of the silicon wafer is heated through heat reflected by the inner cavity, and the temperature difference between the two sides of the silicon wafer is large because the heat conduction is larger than the reflected heat. Because the temperature difference between the two sides of the silicon wafer is large, the silicon wafer can generate warping phenomenon, so that the silicon wafer is unevenly distributed along the radial direction of the temperature, and the silicon wafer has defects in epitaxial growth.
Disclosure of Invention
The invention discloses semiconductor process equipment and a control method thereof, which aim to solve the problem that a wafer has defects in epitaxial growth due to large temperature difference between a first side and a second side of the wafer.
In order to solve the technical problem, the invention is realized as follows:
in a first aspect, the application discloses semiconductor process equipment, which comprises a process chamber, a first heating assembly, a first sensor, a first control module and a second heating assembly, wherein the process chamber comprises a cavity and a bearing seat, the bearing seat is arranged in the cavity and used for bearing a wafer, and the first sensor is used for detecting the warping degree of the wafer;
first heating element and second heating element set up respectively in the both sides of cavity along the axial, and second heating element is used for heating the wafer from the second side that bears the weight of the seat, and first control module carries out the compensation heating towards the first side wafer that bears the weight of the seat according to the first heating element of camber control, and first side and second side distribute mutually back to back.
In a second aspect, the present application further discloses a method for controlling semiconductor processing equipment, where the semiconductor processing equipment is the semiconductor processing equipment of the first aspect, and the method includes:
detecting the warping degree of the wafer;
reading a preset first temperature compensation value of the first side of the wafer corresponding to the warping degree according to the warping degree;
and controlling the first heating assembly to heat the wafer from the first side, so that the temperature difference between the first side and the second side is within a first preset temperature difference range.
The technical scheme adopted by the invention can achieve the following technical effects:
the semiconductor process equipment disclosed by the application is provided with the cavity, so that the bearing seat can be arranged in the cavity, and further the bearing seat can bear the wafer; the second heating assembly is arranged, so that the second heating assembly can heat the wafer from the second side; the warping degree of the wafer is detected through the first sensor, the first control module can control the first heating assembly to perform compensation heating towards the first lateral wafer of the bearing seat according to the detected warping degree, the first heating assembly and the second heating assembly heat the two sides of the wafer back to the back, the problem that the wafer is heated only from one side by semiconductor process equipment and the temperature difference between the first side and the second side of the wafer is large is solved, the problem that the warping degree is large due to the fact that the temperature difference between the two sides of the wafer is large is effectively solved, and finally the problem that the defect exists in epitaxial growth of the wafer due to the fact that the warping degree of the wafer is not uniform in the radial temperature distribution is effectively solved.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a reflector according to an embodiment of the disclosure, where the direction indicated by the arrow in fig. 2 is a heat direction;
FIG. 3 is a schematic structural diagram of a transparent region according to an embodiment of the disclosure;
fig. 4 is a schematic view of a wafer and a carrier according to an embodiment of the disclosure.
Description of reference numerals:
100-cavity, 110-transparent area,
200-bearing seat, 210-bearing part, 220-rotating support,
300-a first heating assembly, 310-a first electromagnetic coil, 320-an induction heating element,
410-a reflection member, 420-a driving mechanism,
500-first sensor,
600-temperature sensor,
700-an upper cover,
800-a second heating component,
900-wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1-4, an embodiment of the present invention discloses a semiconductor processing apparatus, which can be used for processing a wafer 900. The semiconductor processing apparatus includes a process chamber, a first heating assembly 300, a first sensor 500, a first control module, and a second heating assembly 800. The process chamber includes a chamber body 100 and a susceptor 200, the chamber body 100 providing a location for processing the wafer 900, and the chamber body 100 also providing a base for mounting the susceptor 200. The susceptor 200 is disposed in the chamber 100, and the susceptor 200 is used for supporting the wafer 900. The susceptor 200 may be disposed at the bottom of the chamber 100.
The first heating assembly 300 and the second heating assembly 800 are respectively disposed at both sides of the chamber 100 in the axial direction. The axial direction may be a direction parallel to the orientation of the bearing surface of the bearing seat 200. The second heating assembly 800 is used to heat the wafer 900 from the second side of the susceptor 200. The second heating element 800 heats the wafer 900 from the second side to bring the temperature of the wafer 900 to a desired temperature for processing, the primary source of heat for heating the wafer 900 being from the second heating element 800.
The first sensor 500 is used for detecting the warpage of the wafer 900, and the first control module controls the first heating element 300 to perform compensation heating on the wafer 900 facing the first side of the susceptor 200 according to the detected warpage, wherein the first side and the second side are distributed in an opposite manner. The first and second sides referred to herein may also correspond to the first and second sides of the wafer 900.
When only the second heating assembly 800 heats the wafer 900, the wafer 900 is processed because the heat of the second side of the wafer 900 is directly from the second heating assembly 800, and the heat of the first side of the wafer 900 is mainly from the temperature of the chamber 100 and the temperature reflected by the inner wall of the chamber 100, so that there is a temperature difference between the first side and the second side of the wafer 900. Due to the temperature difference between the first side and the second side of the wafer 900 and the gravity of the wafer 900 itself, the wafer 900 may be warped, which is the warping of the wafer 900.
The warpage of the wafer 900 may be determined by inspection. Specifically, when the wafer 900 is not warped, the distance from the center of the wafer 900 to the susceptor 200 is measured, and then the distance from the center of the wafer 900 to the susceptor 200 is measured at different degrees of warpage. The different distances from the center of the wafer 900 to the susceptor 200, which correspond to different degrees of warpage, obtained through experiments, may be stored in the first control module in advance. The first sensor 500 may obtain a corresponding warpage by detecting a distance from the center of the wafer 900 to the susceptor 200.
According to the experiment, the temperature difference between the first side and the second side of the wafer 900 corresponding to the wafer 900 at different degrees of warp can be obtained, the first side and the second side of the wafer 900 have different temperature differences at different degrees of warp, the temperature difference is a first temperature compensation value of the first side of the wafer 900 relative to the second side, and the relationship between the degree of warp of the wafer 900 and the first temperature compensation value can be stored in the first control module in advance.
Specifically, the first control module may obtain a first temperature compensation value of the first side of the wafer 900 relative to the second side according to the warpage, and further may control the first heating element 300 to perform compensation heating on the first side of the wafer 900 facing the susceptor 200, where the temperature value of the compensation heating is the first temperature compensation value.
The first heating assembly 300 may be a heat generating coil, and the heat generating coil generates heat to compensate for heating of the wafer 900 from the first side by energizing the heat generating coil. The first heating element 300 may also be a heating plate attached to the top wall of the chamber 100, the top wall is opposite to the bearing surface of the bearing seat 200, the heating plate heats the top wall and then transfers heat to the top wall, and the top wall performs compensation heating on the wafer 900 from the first side.
The second heating assembly 800 may also be a heat generating coil, such that the heat generating coil generates heat to heat the wafer 900 from the second side by energizing the heat generating coil. The second heating element 800 may also heat the susceptor 200, and the susceptor 200 may heat the wafer 900 from the second side.
In a specific implementation process, the susceptor 200 is disposed in the chamber 100, the susceptor 200 is used for carrying the wafer 900, the second heating element 800 heats the wafer from the second side, the first sensor 500 detects the warpage of the wafer 900, and the first control module controls the first heating element 300 to perform compensation heating towards the first side of the susceptor 200 toward the wafer 900 according to the detected warpage.
In the semiconductor processing equipment disclosed by the application, the cavity 100 is arranged, so that the bearing seat 200 can be arranged in the cavity 100, and the bearing seat 200 can bear the wafer 900; by arranging the second heating element 800 such that the second heating element 800 can heat the wafer 900 from the second side; the warping degree of the wafer 900 is detected through the first sensor 500, so that the first control module can control the first heating assembly 300 to perform compensation heating towards the first lateral wafer 900 of the bearing seat 200 according to the detected warping degree, the first heating assembly 300 and the second heating assembly 800 heat the two opposite sides of the wafer 900, the problem that the wafer 900 is heated only from one side by semiconductor process equipment and the temperature difference between the first side and the second side of the wafer 900 is large is solved, the problem that the warping degree is large due to the fact that the temperature difference between the two sides of the wafer 900 is large is solved effectively, and finally the problem that the wafer 900 warps and the problem that the wafer 900 has defects in epitaxial growth due to the fact that the wafer 900 is uneven in radial temperature distribution is solved effectively is solved.
Further, the first heating assembly 300 may include a first electromagnetic coil 310 and an induction heating element 320. The induction heating element 320 is disposed outside the cavity 100 and opposite to the carrier 200, and the first electromagnetic coil 310 is disposed on a side of the induction heating element 320 away from the cavity 100. The first electromagnetic coil 310 may generate a magnetic field when being energized, the induction heating member 320 generates heat in the magnetic field generated by the first electromagnetic coil 310, and the induction heating member 320 transfers the heat to the top wall of the chamber 100 and heats the wafer 900 from the first side through the top wall. Specifically, the material of the induction heating element 320 may be a material that is inductively heated in a magnetic field. Materials that can be inductively heated in a magnetic field have been disclosed, and the specific material of the induction heating element 320 can be selected as desired. The induction heating member 320 may cover the carrier base 200.
By arranging the first heating assembly 300 in a structure including the first electromagnetic coil 310 and the induction heating element 320, a magnetic field is generated after the first electromagnetic coil 310 is energized, so that the induction heating element 320 generates heat in the magnetic field, and the heat of the induction heating element 320 is transferred to the top wall of the chamber 100, thereby performing temperature compensation on the wafer 900 from the first side; the use of the first electromagnetic coil 310 makes it possible to control the heating of the induction heating member 320 by controlling only the on/off of the first electromagnetic coil 310, thereby making the heating control of the wafer 900 from the first side simpler and more effective; the first electromagnetic coil 310 and the induction heating element 320 are disposed outside the chamber 100, so that the medium for processing the wafer 900 in the chamber 100 can be effectively prevented from adhering to the first electromagnetic coil 310 and the induction heating element 320, and the maintenance of the first electromagnetic coil 310 and the induction heating element 320 is facilitated.
Further, the first control module is connected to the first sensor 500 and the first electromagnetic coil 310, respectively, and the first control module controls the heating power of the first electromagnetic coil 310 according to the warpage of the wafer 900, so that the temperature difference between the first side and the second side of the wafer 900 is within a first preset temperature difference range. The first preset temperature difference range is that when the wafer 900 is processed in the cavity, the temperature difference exists between the first side and the second side of the wafer 900, the temperature difference between the first side and the second side of the wafer 900 is within a certain range, the processing state of the wafer 900 can be met, and the temperature difference between the first side and the second side of the wafer 900 meeting the processing state is the first preset temperature difference range.
The first sensor 500 and the first electromagnetic coil 310 are connected through the first control module, so that the heating power of the first electromagnetic coil 310 can be controlled according to the warping degree, the temperature difference between the first side and the second side of the wafer 900 is within a first preset temperature difference range, and the precision of the temperature compensation of the first electromagnetic coil 310 on the first side of the wafer 900 is effectively improved.
The heat generated by the heat generation of the induction heating member 320 in the magnetic field of the first electromagnetic coil 310 may heat the top wall of the chamber 100, and the top wall of the chamber 100 may heat the wafer 900 from the first side. The induction heating member 320 may be a cylindrical structure having a diameter of 300mm, and the induction heating member 320 may cover only an area of the wafer 900. By changing the power of the first electromagnetic coil 310, the strength of the magnetic field generated by the first electromagnetic coil 310 can be changed, and the heating condition of the induction heating element 320 can be adjusted, so that the wafer 900 temperature can be adjusted from the first side. The induction heating member 320 may be a transparent ceramic cover plate inductively heatable in a magnetic field, but the induction heating member 320 may be of other material structures, which are not particularly limited herein.
When the wafer 900 is processed, due to a certain degree of warpage, a certain temperature difference exists between the wafer 900 and the susceptor 200 in the radial direction, so that the wafer 900 may slip due to dislocation during processing. In order to alleviate the phenomenon of dislocation slip, in an alternative embodiment, the chamber 100 may have a transparent region 110, the induction heating element 320 is disposed on the transparent region 110, and the induction heating element 320 is a transparent member, and the transparent region 110 is disposed opposite to the carrier 200. In particular, the transparent area 110 may be a circular area covering the carrier 200. The transparent region 110 may also be a long strip structure along the radial direction of the susceptor 200, and since the susceptor 200 rotates in the chamber 100 during the processing of the wafer 900, the wafer 900 may rotate to be opposite to the transparent region 110.
The semiconductor processing equipment may further include a reflecting member 410 and a driving mechanism 420, the reflecting member 410 may be disposed outside the chamber body 100 and opposite to the transparent region 110, the driving mechanism 420 may be drivingly connected to the reflecting member 410, the driving mechanism 420 is configured to drive the reflecting member 410 to rotate, and the reflecting member 410 may be configured to reflect heat incident thereon. Specifically, the heat reflected by the reflecting member 410 may be generated by the second heating assembly 800, the first heating assembly 300, or both the first heating assembly 300 and the second heating assembly 800, and the reflected heat may be infrared light. The heat reflected by the reflecting member 410 may be used to heat the wafer 900 from the first side in a radial direction of the susceptor 200 by the induction heating member 320 and the transparent region 110. Specifically, the experiment obtains the temperatures of the wafer 900 at different concentric circles of the susceptor 200, obtains the relative temperature differences at the different concentric circles, and heats the wafer 900 at the position where the wafer is heated along the radial direction of the susceptor 200, that is, at the position where the relative temperature differences are required to be obtained so that the temperatures at the different concentric circles are the same.
According to the experiment, the susceptor 200 has concentric circles with different diameters under different degrees of warpage of the wafer 900, the concentric circles with different diameters and the wafer 900 have different intersection points along the radial direction of the susceptor 200, and the temperature difference of the wafer 900 along the radial direction of the susceptor 200 can be obtained by detecting the resistance value at the different intersection points along the radial direction of the susceptor 200, where the temperature difference is the second temperature compensation value. The heat reflected by the reflector 410 is heated from the first side toward the wafer 900 along the radial direction of the susceptor 200, so that the wafer 900 obtains a temperature of a second temperature compensation value where it needs to be heated.
Specifically, the driving mechanism 420 may be a hydraulic expansion member, a pneumatic expansion member, a shape memory alloy, or the like, and the embodiment of the present application does not limit the specific kind of the driving mechanism.
By providing the transparent region 110 on the chamber body 100, the induction heating member 320 is provided on the transparent region 110, and the induction heating member 320 is a transparent member, so that heat outside the chamber body 100 can heat the wafer 900 from the first side through the transparent region 110 and the induction heating member 320; through the reflection member 410 and the driving mechanism 420, the reflection member 410 rotates to different angles under the action of the driving mechanism 420, so that the heat reflected by the reflection member 410 can heat different positions of the wafer 900 along the radial direction of the susceptor 200 from the first side through the transparent region 110 and the induction heating element 320, and the problem that the temperature difference is large along the radial direction of the susceptor 200 of the wafer 900 can be effectively solved.
Further, the reflecting member 410 may be a convex lens. According to the focusing characteristics of the convex lens, the convex lens has the function of focusing energy, so that the temperature adjusting capability of the wafer 900 along the radial direction of the bearing seat 200 can be improved.
Further, the semiconductor process apparatus may further include an upper cover 700, the upper cover 700 may be disposed outside the chamber body 100, the upper cover 700 may enclose an accommodating space with a top wall of the chamber body 100, the reflector 410 may be disposed in the accommodating space, and the reflector 410 may be disposed on a top of the upper cover 700. The upper cover 700 is arranged to effectively collect heat radiated by the first heating element 300 and the second heating element 800 in the accommodating space, so that the heat reflected by the reflector 410 can meet the requirement of heating the wafer 900, and the upper cover 700 can also protect components such as the reflector 410 and the like installed in the accommodating space. Specifically, the upper cover can be an arc cover, and the arc cover can improve the heat gathering effect and reduce the occupation of space.
In an alternative embodiment, the susceptor 200 may have a plurality of carrying portions 210, the carrying portions 210 may be disposed opposite to the transparent region 110, and the carrying portions 210 are used for carrying the wafer 900. The specific bearing part 210 may be a groove structure or a boss structure, and the specific structure of the bearing part 210 is not limited herein. The supporting parts 210 are rotatably disposed in the chamber, and the supporting parts 210 are arranged in a ring array around a central axis of the supporting base 200. The transparent region 110 may also be a ring-shaped structure, and a central region surrounded by the ring-shaped transparent region 110 and an outer region outside the ring-shaped transparent region 110 may be gold-plated regions. The transparent area 110 may be disposed opposite to the bearing part 210 and cover the plurality of bearing parts 210, and the reflective member 410 may be located on a central axis of the transparent area 110.
By arranging the plurality of bearing parts 210 on the bearing seat 200, the bearing seat 200 can bear a plurality of wafers 900 at the same time, and the process efficiency can be effectively improved; the carrying parts 210 are rotatably disposed in the chamber 100, and the carrying parts 210 are annularly arranged around the central axis of the carrying base 200, so that when the wafer 900 is processed, the wafer 900 can rotate along with the carrying parts 210, and the wafer 900 can be processed more uniformly in the chamber 100. The transparent area 110 is arranged in a ring structure, so that the transparent area 110 can be arranged opposite to the bearing part 210, and heat reflected by the reflecting member 410 can be reflected to a position of the wafer 900 to be heated along the radial direction of the bearing seat 200 through the transparent area 110; the center of the annular transparent region 110 is not configured to be a transparent structure, so that heat dissipation in the cavity 100 through the central transparent structure can be effectively reduced, and further energy consumption can be reduced.
Specifically, the annular transparent area 110 is a placement area covering the wafer 900, the diameter of the annular transparent area 110 may be 200mm to 300mm, and the center of the annular transparent area 110 is 40mm to 50mm of the placement area without the wafer 900.
Further, the bottom of the carrying seat 200 may be provided with a rotating pillar 220, the rotating pillar 220 may be fixedly connected to the carrying seat 200, and the rotating pillar 220 may rotate to drive the carrying seat 200 to rotate together, so as to rotatably set the carrying portion 210 in the cavity 100, so that the wafer 900 may be rotatably processed when being processed in the cavity 100, thereby improving the uniformity of the wafer 900. Of course, the rotating strut 220 may be driven by another drive mechanism.
Further, the bearing part 210 may be a cambered groove recessed towards the inside of the bearing seat 200, and the first sensor 500 is disposed at a central position of a bottom of the cambered groove. Through setting up the bearing portion 210 into the cambered surface recess for the setting that wafer 900 can be firm is in the cambered surface recess, and then makes wafer 900 can not break away from when rotatory and hold seat 200, locates the bottom central point of cambered surface recess with first sensor 500 simultaneously and puts, makes the degree of warping and warping of detecting wafer 900 more accurate.
Further, the first control module may further control the driving mechanism 420 to drive the reflection member 410 to rotate according to the warpage, so that the reflection geothermal energy of the reflection member 410 heats the wafer 900 from the first side along the radial direction of the susceptor, and the temperature difference of the wafer 900 along the radial direction of the susceptor 200 is within a second preset temperature difference range.
The second preset temperature difference range can be obtained through experiments, when the wafer 900 is processed, a certain temperature difference exists between the temperature of the wafer 900 in the radial direction of the bearing seat 200 within a certain range, and the processing requirement of the wafer 900 can be met. The temperature difference range of the wafer 900 meeting the processing requirement along the radial direction of the susceptor 200 is a second preset temperature difference range.
The first control module can control the first heating assembly 300 to perform compensation heating on the wafer 900 from the first side through the warping degree, and control the reflecting member 410 to control the temperature of the wafer 900 along the radial direction of the susceptor 200, so that the temperature adjusting capability of the wafer 900 is more accurate, and the efficiency is higher.
The second heating element 800 may comprise a second electromagnetic coil, which is disposed outside the cavity 100 and on a side of the carrying seat 200 away from the first heating element. The susceptor 200 may be an induction heatable material, and may generate heat in the magnetic field generated when the second electromagnetic coil is energized, so that the susceptor 200 heats the wafer 900 from the second side, for example, the susceptor 200 may be graphite which is induction heated in the induction magnetic field. Of course, the second heating assembly 800 may also be an infrared heating element.
The semiconductor processing apparatus may further include a temperature sensor 600 and a second control module, the temperature sensor 600 being configured to detect an actual temperature of a center of the wafer 900, which may be a temperature of a center of the first side of the wafer 900. The second control module is connected to the temperature sensor 600 and the second electromagnetic coil, and controls the heating power of the second electromagnetic coil according to the actual temperature of the center of the wafer 900, so that the actual temperature of the center of the wafer 900 reaches a preset temperature value.
The preset temperature value is a temperature value to be reached by the wafer 900 during processing, and the preset temperature value is a temperature value obtained in advance during processing of the wafer 900. The temperature sensor 600 is arranged to detect the temperature of the center of the wafer 900, so that the second control module can control the heating power of the second electromagnetic coil according to the feedback of the temperature sensor 600, and the actual temperature of the center of the wafer 900 can accurately reach the preset temperature value through feedback adjustment.
Based on the semiconductor process equipment disclosed in the embodiment of the present application, the embodiment of the present application discloses a control method of the semiconductor process equipment, the semiconductor process equipment may include a process chamber, a first heating assembly 300, a first sensor 500, a first control module and a second heating assembly 800, the process chamber includes a cavity 100 and a carrying seat 200, the carrying seat 200 is disposed in the cavity 100 and is used for carrying a wafer 900, and the first sensor 500 is used for detecting the warpage of the wafer 900;
the first heating element 300 and the second heating element 800 are respectively disposed at two sides of the chamber 100 along an axial direction, the second heating element 800 is configured to heat the wafer 900 from the second side of the carrier 200, the first control module controls the first heating element 300 to perform compensation heating towards the first lateral wafer 900 of the carrier 200 according to the warpage, and the first side and the second side are distributed in an opposite manner.
The disclosed control method of semiconductor process equipment may include:
detecting the warping degree of the wafer 900;
reading a preset first preset temperature difference range of the first side and the second side of the wafer 900 corresponding to the warping degree according to the warping degree;
the first preset temperature difference range is that when the wafer 900 is processed in the cavity, the temperature difference exists between the first side and the second side of the wafer 900, the temperature difference between the first side and the second side of the wafer 900 is within a certain range, the processing state of the wafer 900 can be met, and the temperature difference between the first side and the second side of the wafer 900 meeting the processing state is the first preset temperature difference range.
Reading a preset first temperature compensation value of the first side of the wafer 900 corresponding to the warpage according to the warpage;
according to the experiment, the temperature difference of the first side and the second side of the wafer 900 corresponding to the wafer 900 at different degrees of warp can be obtained, the first side and the second side of the wafer 900 have different temperature differences at different degrees of warp, and the temperature difference is a first temperature compensation value of the first side relative to the second side of the wafer 900.
The first heating element 300 is controlled to heat the wafer 900 from the first side, and the first side obtains a temperature compensation of a first temperature compensation value, so that the temperature difference between the first side and the second side is within the first preset temperature difference range.
Through detecting wafer 900 warpage degree, can obtain under corresponding warpage degree, the first preset difference in temperature of the first side and the second side of wafer 900, and the first temperature compensation value of first side, thereby control first heating element 300 and heat the first side of wafer 900, make the temperature compensation to the first side of wafer 900 that obtains first temperature compensation value, thereby make the difference in temperature of first side and second side in first preset difference in temperature scope, wafer 900 processing has been solved effectively to the first side and the second side difference in temperature not causing in first preset difference in temperature scope wafer 900 and has had the defect ground problem.
In an alternative embodiment, the first heating assembly 300 comprises a first electromagnetic coil 310 and an induction heating element 320, the induction heating element 320 is disposed at an outer side of the cavity 100 and opposite to the carrier base 200, the first electromagnetic coil 310 is disposed at a side of the induction heating element 320 facing away from the cavity 100, wherein:
with the first electromagnetic coil 310 energized, the induction heating member 320 generates heat in the magnetic field generated by the first electromagnetic coil 310 to heat the wafer 900 from the first side.
The cavity 100 has a transparent region 110, the induction heating element 320 is disposed on the transparent region 110, the induction heating element 320 is a transparent member, and the transparent region 110 is disposed opposite to the carrier 200;
the semiconductor processing equipment further comprises a reflecting member 410 and a driving mechanism 420, wherein the reflecting member 410 is disposed outside the chamber body 100 and is opposite to the transparent region 110, the driving mechanism 420 is used for driving the reflecting member 410 to rotate, the reflecting member 410 is used for reflecting heat projected thereon, and the heat reflected by the reflecting member 410 is used for heating the wafer 900 from the first side through the induction heating member 320 and the transparent region 110 along the radial direction of the susceptor 200.
The control method of the semiconductor process equipment further comprises the following steps:
reading a preset second temperature compensation value of the wafer 900 corresponding to the warpage along the radial direction of the bearing seat 200 according to the warpage;
according to the experiment, the susceptor 200 has concentric circles with different diameters under different degrees of warpage of the wafer 900, the concentric circles with different diameters and the wafer 900 have different intersection points along the radial direction of the susceptor 200, and the temperature difference of the wafer 900 along the radial direction of the susceptor 200 can be obtained by detecting the resistance value at the different intersection points along the radial direction of the susceptor 200, where the temperature difference is the second temperature compensation value. The temperature difference obtained according to the resistance values at the different intersection points may be obtained through experiments, for example, the resistance values at the different intersection points are obtained first when there is no temperature difference in the radial direction of the susceptor 200 for the wafer 900, and then the resistance values when there is a temperature difference in the radial direction of the susceptor 200 for the wafer 900 are obtained. Through the corresponding relation between the resistance value and the temperature, the temperature at the corresponding position can be obtained through detecting the resistance value.
And reading a second preset temperature difference range, corresponding to the warpage, of the wafer 900 along the radial direction of the susceptor, according to the warpage.
The second preset temperature difference range can be obtained through experiments, when the wafer 900 is processed, a certain temperature difference exists between the temperature of the wafer 900 in the radial direction of the bearing seat 200 within a certain range, and the processing requirement of the wafer 900 can be met. The temperature difference range of the wafer 900 meeting the processing requirement along the radial direction of the susceptor 200 is a second preset temperature difference range.
The reflector 410 is controlled to rotate according to the second temperature compensation value, and the reflected heat is heated from the first side to the wafer 900 along the radial direction of the susceptor 200, so that the temperature difference of the wafer 900 along the radial direction of the susceptor 200 is within a second preset temperature difference range.
By detecting the warpage of the wafer 900, a second temperature compensation value and a second preset temperature difference of the wafer 900 along the radial direction of the bearing seat 200 under the corresponding warpage can be obtained, so that the wafer 900 is heated along the radial direction of the bearing seat 200 to obtain the temperature compensation of the second temperature compensation value, the temperature difference of the wafer 900 along the radial direction of the bearing seat 200 is in a second preset range, and the problem of processing defects caused by the large temperature difference of the wafer 900 along the radial direction of the bearing seat 200 is effectively solved.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
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| CN115101470A (en) * | 2022-07-28 | 2022-09-23 | 北京北方华创微电子装备有限公司 | Wafer bearing device, semiconductor process equipment and control method thereof |
| TWI842543B (en) * | 2023-05-25 | 2024-05-11 | 力晶積成電子製造股份有限公司 | Detection method for heater |
| CN120683456A (en) * | 2025-08-25 | 2025-09-23 | 浙江晟霖益嘉科技有限公司 | A dual-wafer processing chamber and control method thereof |
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