CN113644893B - Bulk acoustic wave filter and filter assembly - Google Patents
Bulk acoustic wave filter and filter assembly Download PDFInfo
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- CN113644893B CN113644893B CN202110740553.0A CN202110740553A CN113644893B CN 113644893 B CN113644893 B CN 113644893B CN 202110740553 A CN202110740553 A CN 202110740553A CN 113644893 B CN113644893 B CN 113644893B
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- 239000010408 film Substances 0.000 claims abstract description 208
- 239000010409 thin film Substances 0.000 claims abstract description 197
- 238000012360 testing method Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the technical field of filters, and provides a bulk acoustic wave filter and a filter assembly, wherein the bulk acoustic wave filter comprises a first film bulk acoustic wave resonator, a second film bulk acoustic wave resonator, a third film bulk acoustic wave resonator, a fourth film bulk acoustic wave resonator, a fifth film bulk acoustic wave resonator, a sixth film bulk acoustic wave resonator and a seventh film bulk acoustic wave resonator which are connected in series between an input terminal and an output terminal; one ends of the plurality of parallel thin film bulk acoustic resonators are connected in parallel to nodes among the first thin film bulk acoustic resonator, the second thin film bulk acoustic resonator, the third thin film bulk acoustic resonator, the fifth thin film bulk acoustic resonator, the sixth thin film bulk acoustic resonator and the seventh thin film bulk acoustic resonator, and the other ends of the plurality of parallel thin film bulk acoustic resonators are respectively connected with a grounding terminal. The filter may allow signals of a specific frequency to pass.
Description
Technical Field
The invention belongs to the technical field of filters, and particularly relates to a bulk acoustic wave filter and a filter assembly.
Background
In recent years, with the continuous development of 5G wireless communication technology, mobile communication is realized by using higher frequency bands and frequency band recombination, which puts higher demands on miniaturization, high frequency bandwidth, integration and flexibility of related radio frequency components.
The film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) filter is gradually replacing the traditional surface acoustic wave filter and ceramic filter by virtue of its excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect, etc., and has an increasing market share in the field of radio frequency filters and plays a great role in the field of 5G wireless communication radio frequency.
However, most of the prior researches on the thin film bulk acoustic resonator filter are focused on the preparation method, and the researches on the specific structure of the thin film bulk acoustic resonator filter are less.
Disclosure of Invention
The embodiment of the invention provides a bulk acoustic wave filter and a filter assembly, and aims to provide a novel structure of a film bulk acoustic wave resonator filter.
In a first aspect, an embodiment of the present invention provides a film bulk acoustic resonator filter with a center frequency of 2050MHz, including an input terminal, an output terminal, a ground terminal, a plurality of series-connected film bulk acoustic resonators, and a plurality of parallel-connected film bulk acoustic resonators;
the plurality of series-connected thin film bulk acoustic resonators includes a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator, a fourth thin film bulk acoustic resonator, a fifth thin film bulk acoustic resonator, a sixth thin film bulk acoustic resonator, and a seventh thin film bulk acoustic resonator connected in series between the input terminal and the output terminal;
the plurality of parallel thin film bulk acoustic resonators comprise an eighth thin film bulk acoustic resonator, a ninth thin film bulk acoustic resonator, a tenth thin film bulk acoustic resonator and an eleventh thin film bulk acoustic resonator, wherein one end of the eighth thin film bulk acoustic resonator is connected between the first thin film bulk acoustic resonator and the second thin film bulk acoustic resonator; one end of the ninth film bulk acoustic resonator and one end of the tenth film bulk acoustic resonator are respectively and sequentially connected to a node between the third film bulk acoustic resonator and the fifth film bulk acoustic resonator, and the other end of the ninth film bulk acoustic resonator is connected with the other end of the tenth film bulk acoustic resonator and then connected with the grounding terminal; one end of the eleventh thin film bulk acoustic resonator is connected to a node between the sixth thin film bulk acoustic resonator and the seventh thin film bulk acoustic resonator; the other ends of the eighth film bulk acoustic resonator and the eleventh film bulk acoustic resonator are respectively connected with the grounding terminal;
the distances from the centers of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the fifth film bulk acoustic resonator and the seventh film bulk acoustic resonator to a first straight line where the input terminal and the output terminal are located are smaller than a threshold value; the center of the first film bulk acoustic resonator and the center of the eighth film bulk acoustic resonator are located on a first vertical line, the center of the fourth film bulk acoustic resonator and the center of the tenth film bulk acoustic resonator are located on a second vertical line, the center of the seventh film bulk acoustic resonator and the center of the eleventh film bulk acoustic resonator are located on a third vertical line, and the first vertical line, the second vertical line and the third vertical line are respectively parallel to each other.
The filter in the embodiment of the invention comprises a plurality of film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of film bulk acoustic resonators connected in parallel between a plurality of film bulk acoustic resonator nodes connected in series. The signal passes through the input terminal, and then passes through the thin film bulk acoustic resonators connected in series and the thin film bulk acoustic resonators connected in parallel, so that the signal with a specific frequency can pass through.
With reference to the first aspect, in one possible implementation manner, a series resonance frequency and a parallel resonance frequency of the plurality of series thin film bulk acoustic resonators are the same; the series resonant frequency and the parallel resonant frequency of the plurality of parallel thin film bulk acoustic resonators are the same.
With reference to the first aspect, in one possible implementation manner, a series resonance frequency of the plurality of series connection film bulk acoustic resonators is the same as a parallel resonance frequency of the plurality of parallel connection film bulk acoustic resonators.
With reference to the first aspect, in one possible implementation manner, the area of the first film bulk acoustic resonator is 16950 μm 2 -17050μm 2 The second and third thin film bulk acoustic resonators have an area of 14550 μm 2 -14650μm 2 The fourth and seventh thin film bulk acoustic resonators have an area of 22950 μm 2 -23050μm 2 The fifth film bulk acoustic resonator has an area of 18750 μm 2 -18850μm 2 The area of the sixth film bulk acoustic resonator is 15950 μm 2 -16050μm 2 The eighth film bulk acoustic resonator has an area of 22450 μm 2 -22550μm 2 The area of the ninth film bulk acoustic resonator is 19450 μm 2 -19550μm 2 The tenth film bulk acoustic resonator has an area of 27550 μm 2 -27650μm 2 The eleventh thin film bulk acoustic resonator has an area of 28650 μm 2 -28750μm 2 。
With reference to the first aspect, in one possible implementation manner, the layout of the thin film bulk acoustic resonator filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer and a hole layer, where the difference frequency layer corresponds to the thin film bulk acoustic resonators connected in parallel, and the thin film bulk acoustic resonators connected in series do not have the difference frequency layer; and a plurality of release holes are formed in the hole layer, each film bulk acoustic resonator is provided with a plurality of release channels, and each release channel corresponds to at least one release hole.
In this embodiment, the upper electrode layer has a thickness ofThe thickness of the lower electrode layer isThe thickness of the piezoelectric layer is +.>The difference frequency layer has a thickness of +.>
In this embodiment, the diameter of the release hole is 15 μm to 25. Mu.m.
In some embodiments, the distances from the centers of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the fifth film bulk acoustic resonator, and the seventh film bulk acoustic resonator to a first line in which the input terminal and the output terminal are located are less than a threshold value; the centers of the third film bulk acoustic resonator, the fourth film bulk acoustic resonator and the sixth film bulk acoustic resonator are positioned on a second straight line, the second straight line is parallel to the first straight line, and the second straight line is positioned on a second side of the first straight line; the eighth thin film bulk acoustic resonator and the eleventh thin film bulk acoustic resonator are located on a first side of the first line, the ninth thin film bulk acoustic resonator and the tenth thin film bulk acoustic resonator are located on a second side of the first line, the first side and the second side being opposite;
the central connecting lines of the first film bulk acoustic resonator, the second film bulk acoustic resonator and the third film bulk acoustic resonator form a first V-shaped structure with an angle smaller than 90 degrees, and an opening of the first V-shaped structure faces to a second side of the first straight line;
the central connecting lines of the second film bulk acoustic resonator, the third film bulk acoustic resonator and the fourth film bulk acoustic resonator form a second V-shaped structure with an angle smaller than 90 degrees, and an opening of the second V-shaped structure faces to the first side of the first straight line;
the central connecting lines of the third film bulk acoustic resonator, the fourth film bulk acoustic resonator and the fifth film bulk acoustic resonator form a third V-shaped structure with an angle larger than 90 degrees, and an opening of the third V-shaped structure faces to the first side of the first straight line;
the center connecting lines of the fourth film bulk acoustic resonator, the fifth film bulk acoustic resonator and the sixth film bulk acoustic resonator form a fourth V-shaped structure with an angle smaller than 90 degrees, and an opening of the fourth V-shaped structure faces to the second side of the first straight line;
and the central connecting lines of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator form a fifth V-shaped structure with an angle smaller than 90 degrees, and an opening of the fifth V-shaped structure faces to the first side of the first straight line.
Illustratively, the layout of the film bulk acoustic resonator filter includes a first version region to a sixteenth version region;
the first plate region, the third plate region and the fifth plate region are grounded terminal plate regions, the second plate region is an input terminal plate region, the fourth plate region is an output terminal plate region, the third plate region is positioned at the lower part of the layout of the filter, and the first plate region, the fifth plate region, the second plate region and the fourth plate region are respectively arranged at two sides of the layout of the filter;
the sixth edition of drawing area to the twelfth edition of drawing area are respectively the edition of drawing areas of the first film bulk acoustic resonator to the seventh film bulk acoustic resonator; an eighth version region, a ninth version region and an eleventh version region are positioned at the lower parts of the sixth version region, the seventh version region, the tenth version region and the twelfth version region;
the thirteenth to sixteenth edition of areas are edition areas of the eighth to eleventh thin film bulk acoustic resonators, respectively; the thirteenth edition of drawing area is positioned at the upper part of the sixth edition of drawing area, one end of the thirteenth edition of drawing area is respectively connected with the sixth edition of drawing area and the seventh edition of drawing area, and the other end is connected with the first edition of drawing area; the fourteenth edition of drawing area is positioned at the lower part of the eighth edition of drawing area, one end of the fourteenth edition of drawing area is respectively connected with the eighth edition of drawing area and the ninth edition of drawing area, and the other end of the fourteenth edition of drawing area is connected with the third edition of drawing area after being connected with the other end of the fifteenth edition of drawing area; the fifteenth edition region is positioned at the lower part of the ninth edition region, and one end of the fifteenth edition region is respectively connected with the ninth edition region and the tenth edition region; the sixteenth edition of drawing area is located at the upper part of the twelfth edition of drawing area, one end of the sixteenth edition of drawing area is connected with the eleventh edition of drawing area and the twelfth edition of drawing area respectively, and the other end of the sixteenth edition of drawing area is connected with the fifth edition of drawing area.
In a second aspect, an embodiment of the present invention further provides a filter assembly including a thin film bulk acoustic resonator filter as set forth in any one of the preceding claims.
Drawings
Fig. 1 is a schematic circuit diagram of a bulk acoustic wave filter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a layout structure of a bulk acoustic wave filter according to an embodiment of the present invention;
FIG. 3 is a schematic layout of a sacrificial layer of the bulk acoustic wave filter shown in FIG. 2;
FIG. 4 is a schematic layout diagram of a lower electrode layer of the bulk acoustic wave filter shown in FIG. 2;
FIG. 5 is a schematic layout of the upper electrode layer of the bulk acoustic wave filter shown in FIG. 2;
FIG. 6 is a layout view of a difference frequency layer representation of the bulk acoustic wave filter shown in FIG. 2;
FIG. 7 is a schematic layout of the aperture layer of the bulk acoustic wave filter shown in FIG. 2;
fig. 8 is an amplitude-frequency characteristic curve of a bulk acoustic wave filter according to an embodiment of the present invention.
In the figure: 11-input terminal, 12-output terminal, 21-first film bulk acoustic resonator, 22-second film bulk acoustic resonator, 23-third film bulk acoustic resonator, 24-fourth film bulk acoustic resonator, 25-fifth film bulk acoustic resonator, 26-sixth film bulk acoustic resonator, 27-seventh film bulk acoustic resonator, 31-eighth film bulk acoustic resonator, 32-ninth film bulk acoustic resonator, 33-tenth film bulk acoustic resonator, 34-eleventh film bulk acoustic resonator, 41-relief hole.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Thin film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) filters are gradually replacing conventional Surface Acoustic Wave (SAW) filters and ceramic filters, and are playing a great role in the radio frequency field of wireless communications. However, most of the existing researches on FBAR filters are focused on the preparation method, and the researches on specific structures are less. Some engineering application requires the use of a filter with a center frequency of 2050MHz, with a 1dB bandwidth greater than 20MHz, and a rejection of greater than 45dBc at 1950MHz and 2150 MHz.
Based on the above problems, embodiments of the present invention provide a bulk acoustic wave filter. The filter includes: the thin film bulk acoustic resonator comprises an input terminal, an output terminal, a grounding terminal, a plurality of thin film bulk acoustic resonators connected in series and a plurality of thin film bulk acoustic resonators connected in parallel. Wherein the plurality of series-connected thin film bulk acoustic resonators includes a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator, a fourth thin film bulk acoustic resonator, a fifth thin film bulk acoustic resonator, a sixth thin film bulk acoustic resonator, and a seventh thin film bulk acoustic resonator connected in series between the input terminal and the output terminal.
The plurality of parallel thin film bulk acoustic resonators includes an eighth thin film bulk acoustic resonator, a ninth thin film bulk acoustic resonator, a tenth thin film bulk acoustic resonator, and an eleventh thin film bulk acoustic resonator. Wherein one end of the eighth thin film bulk acoustic resonator is connected between the first thin film bulk acoustic resonator and the second thin film bulk acoustic resonator. One end of the ninth film bulk acoustic resonator and one end of the tenth film bulk acoustic resonator are respectively and sequentially connected to the nodes between the third film bulk acoustic resonator and the fifth film bulk acoustic resonator, and the other end of the ninth film bulk acoustic resonator is connected with the other end of the tenth film bulk acoustic resonator and then connected with a grounding terminal.
The center of the first film bulk acoustic resonator and the center of the eighth film bulk acoustic resonator are located on a first vertical line, the center of the fourth film bulk acoustic resonator and the center of the tenth film bulk acoustic resonator are located on a second vertical line, the center of the seventh film bulk acoustic resonator and the center of the eleventh film bulk acoustic resonator are located on a third vertical line, and the first vertical line, the second vertical line and the third vertical line are respectively parallel to each other.
The thin film bulk acoustic resonator filter includes a plurality of thin film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of thin film bulk acoustic resonators connected in parallel between a plurality of thin film bulk acoustic resonator nodes connected in series. When the signal passes through the input terminal, the signal can be filtered in a specific frequency band after passing through the thin film bulk acoustic resonators connected in series and the thin film bulk acoustic resonators connected in parallel, so that the signal with a specific center frequency is output.
Fig. 1 shows a schematic circuit diagram of a bulk acoustic wave filter according to an embodiment of the present invention. Referring to fig. 1, the thin film bulk acoustic resonator filter includes an input terminal 11, an output terminal 12, a plurality of thin film bulk acoustic resonators connected in series, and a plurality of thin film bulk acoustic resonators connected in parallel. Wherein the plurality of series-connected thin film bulk acoustic resonators includes a first thin film bulk acoustic resonator 21, a second thin film bulk acoustic resonator 22, a third thin film bulk acoustic resonator 23, a fourth thin film bulk acoustic resonator 24, a fifth thin film bulk acoustic resonator 25, a sixth thin film bulk acoustic resonator 26, and a seventh thin film bulk acoustic resonator 27 connected in series between the input terminal 11 and the output terminal 12. The plurality of parallel thin film bulk acoustic resonators includes an eighth thin film bulk acoustic resonator 31, a ninth thin film bulk acoustic resonator 32, a tenth thin film bulk acoustic resonator 33, and an eleventh thin film bulk acoustic resonator 34.
Specifically, the first to seventh thin film bulk acoustic resonators 21 to 27 have the same first series resonance frequency and first parallel resonance frequency.
Wherein one end of the eighth thin film bulk acoustic resonator 31 is connected between the first thin film bulk acoustic resonator 21 and the second thin film bulk acoustic resonator 22. One end of the ninth thin film bulk acoustic resonator 32 is connected between the third thin film bulk acoustic resonator 23 and the fourth thin film bulk acoustic resonator 24. One end of the tenth thin film bulk acoustic resonator 33 is connected between the fourth thin film bulk acoustic resonator 24 and the fifth thin film bulk acoustic resonator 25. Specifically, the other end of the ninth thin film bulk acoustic resonator 32 is connected to the other end of the tenth thin film bulk acoustic resonator 33, and then to the ground terminal. One end of the eleventh thin film bulk acoustic resonator 34 is connected to the node between the sixth thin film bulk acoustic resonator 26 and the seventh thin film bulk acoustic resonator 27, respectively, and the other end of the eleventh thin film bulk acoustic resonator 34 is connected to the ground terminal.
Specifically, as shown in fig. 2, fig. 2 is a general layout of the filter, including a first version region 201 to a sixteenth version region 216. The sixth to twelfth edition areas 206 to 212 are edition areas of the first to seventh thin film bulk acoustic resonators 21 to 27, respectively. The thirteenth to sixteenth edition of regions 213 to 216 are the eighth thin film bulk acoustic resonator 31, the ninth thin film bulk acoustic resonator 32, the tenth thin film bulk acoustic resonator 33, and the eleventh thin film bulk acoustic resonator 34, respectively.
The distances from the centers of the first, second, fifth, and seventh thin film bulk acoustic resonators 21, 22, 25, and 27 to the first straight line where the input and output terminals are located are smaller than the threshold value. The dash-dot line between the input terminal 11 and the output terminal 12 as shown in fig. 2 is a first straight line. Wherein the threshold may be the size of a half resonator or the size of a quarter resonator. Wherein the size of the resonator is the largest size of the resonator in a direction perpendicular to the above straight line in the sacrificial layer layout when the resonator is manufactured. The centers of the third film bulk acoustic resonator 23, the fourth film bulk acoustic resonator 24, and the sixth film bulk acoustic resonator 26 are located on a second straight line, which is parallel to the first straight line, and which is located on a second side of the first straight line. The eighth and eleventh thin film bulk acoustic resonators 31 and 34 are located on a first side of the first straight line, and the ninth and tenth thin film bulk acoustic resonators 32 and 33 are located on a second side of the first straight line, the first and second sides being opposite.
And the central lines of the first film bulk acoustic resonator 21, the second film bulk acoustic resonator 22 and the third film bulk acoustic resonator 23 form a first V-shaped structure with an angle smaller than 90 degrees, and the opening of the first V-shaped structure faces to the second side of the first straight line. The center lines of the second film bulk acoustic resonator 22, the third film bulk acoustic resonator 23 and the fourth film bulk acoustic resonator 24 form a second V-shaped structure with an angle smaller than 90 °, and an opening of the second V-shaped structure faces the first side of the first straight line. The center lines of the third film bulk acoustic resonator 23, the fourth film bulk acoustic resonator 24 and the fifth film bulk acoustic resonator 25 form a third V-shaped structure having an angle greater than 90 °, and an opening of the third V-shaped structure faces the first side of the first straight line. The center lines of the fourth film bulk acoustic resonator 24, the fifth film bulk acoustic resonator 25 and the sixth film bulk acoustic resonator 26 form a fourth V-shaped structure having an angle smaller than 90 °, and an opening of the fourth V-shaped structure faces the second side of the first straight line. The center lines of the fifth film bulk acoustic resonator 25, the sixth film bulk acoustic resonator 26, and the seventh film bulk acoustic resonator 27 constitute a fifth V-shaped structure having an angle of less than 90 °, and an opening of the fifth V-shaped structure faces the first side of the first straight line.
Wherein the center of the first thin film bulk acoustic resonator 21 and the center of the eighth thin film bulk acoustic resonator 31 are located on a first vertical line, the center of the fourth thin film bulk acoustic resonator 24 and the center of the tenth thin film bulk acoustic resonator 33 are located on a second vertical line, the center of the seventh thin film bulk acoustic resonator 27 and the center of the eleventh thin film bulk acoustic resonator 34 are located on a third vertical line, and the first vertical line, the second vertical line, and the third vertical line are respectively parallel to each other.
In an exemplary embodiment of the present invention, the first series resonant frequency of the plurality of series-connected thin film bulk acoustic resonators and the second parallel resonant frequency of the plurality of parallel-connected thin film bulk acoustic resonators are the same, thereby forming a specific center frequency.
In some embodiments, the area of the thin film bulk acoustic resonator should be controlled to 4000 μm in consideration of the difficulty in process implementation 2 -80000μm 2 Between them. In the same circuit, the area of each film bulk acoustic resonator in the circuit should be as small as possible when designing, and the area of each film bulk acoustic resonator in the circuit is generally smaller than 4 times.
In some embodiments, in order to obtain a film bulk acoustic resonator filter of a specific center frequency, it may be achieved by adjusting the area and the position of the first to eleventh film bulk acoustic resonators 21 to 34. The thin film bulk acoustic resonator filter may be provided in a symmetrical structure or may be provided in an asymmetrical structure.
Exemplary, to obtain a filter with a center frequency of 2050MHz, the area of the first film bulk acoustic resonator is 16950 μm 2 -17050μm 2 The second and third film bulk acoustic resonators have an area of 14550 μm 2 -14650μm 2 Fourth thin film bulk acoustic resonator and seventh thin film bulk acousticThe area of the resonator was 22950 μm 2 -23050μm 2 The fifth thin film bulk acoustic resonator has an area of 18750 μm 2 -18850μm 2 The area of the sixth thin film bulk acoustic resonator is 15950 μm 2 -16050μm 2 The eighth thin film bulk acoustic resonator has an area of 22450 μm 2 -22550μm 2 The ninth thin film bulk acoustic resonator has an area of 19450 μm 2 -19550μm 2 The tenth thin film bulk acoustic resonator has an area of 27550 μm 2 -27650μm 2 The eleventh thin film bulk acoustic resonator has an area of 28650 μm 2 -28750μm 2 。
In some embodiments, the layout of the film bulk acoustic resonator filter mainly comprises a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer and a hole layer. The difference frequency layer corresponds to a plurality of thin film bulk acoustic resonators connected in parallel, and the thin film bulk acoustic resonators connected in series do not have the difference frequency layer. The difference frequency layer is used for realizing the frequency difference between the parallel thin film bulk acoustic resonators and the series thin film bulk acoustic resonators, thereby forming a filter and realizing the filtering of the phase specific frequency. In general, the second series resonant frequency and the second parallel resonant frequency of the parallel thin film bulk acoustic resonator are lower than the first series resonant frequency and the first parallel resonant frequency of the series thin film bulk acoustic resonator, and the first series resonant frequency is equal to the second parallel resonant frequency.
In order to form an air cavity of the film bulk acoustic resonator and reflect acoustic waves, a hole layer is specially arranged, a plurality of release holes are formed in the hole layer, and each release channel of each film bulk acoustic resonator corresponds to at least one release hole.
For example, each resonator may have a plurality of release channels (e.g., five) each corresponding to one release hole, the release gas entering the release channels through the release holes and then entering the sacrificial layer regions to etch away the sacrificial layer material to a gas, which is then exhausted through the release channels and release holes. In addition, if the space of the filter is strained, the two release channels may share one release hole. In addition, in the probe test area, a probe (e.g., GSG probe) is required to test the chip, and thus the piezoelectric layer needs to be etched away to expose the lower electrode for testing.
In some embodiments, to obtain a filter of a particular center frequency, this may be achieved by adjusting the thicknesses of the upper electrode, lower electrode, and piezoelectric layer.
For example, to obtain a filter with a center frequency of 2050MHz, the upper electrode layer has a thickness ofThe thickness of the lower electrode layer is->The thickness of the piezoelectric layer is +.>
In some embodiments, the difference frequency layer has a thickness of
In some embodiments, the diameter of the release holes may be 15 μm-25 μm.
The embodiment of the invention provides a total layout of a film bulk acoustic resonator filter with a center frequency of 2050MHz as shown in figure 2. The overall layout of the filter in fig. 2 includes a first version of region 201 through a sixteenth version of region 216. The first version of region 201, the third version of region 203 and the fifth version of region 205 are ground terminal version of region, the second version of region 202 is input terminal 11 version of region, the fourth version of region 204 is output terminal 12 version of region, the third version of region 203 is located at the lower part of the layout of the filter, and the first version of region 201, the fifth version of region 205, the second version of region 202 and the fourth version of region 204 are respectively arranged at two sides of the layout of the filter.
The sixth to twelfth edition areas 206 to 212 are edition areas of the first to seventh thin film bulk acoustic resonators 21 to 27, respectively. Among them, an eighth edition area 208, a ninth edition area 209, and an eleventh edition area 211 are located at lower portions of the sixth edition area 206, the seventh edition area 207, the tenth edition area 210, and the twelfth edition area 212.
Specifically, the thirteenth version of the region 213 to the sixteenth version of the region 216 are the eighth thin film bulk acoustic resonator 31, the ninth thin film bulk acoustic resonator 32, the tenth thin film bulk acoustic resonator 33, and the eleventh thin film bulk acoustic resonator 34, respectively. Wherein a thirteenth version of region 213 is located at an upper portion of sixth version of region 206, one end of thirteenth version of region 213 is connected to sixth version of region 206 and seventh version of region 207, respectively, and the other end is connected to first version of region 201. The fourteenth edition region 214 is located at the lower portion of the eighth edition region 208, one end of the fourteenth edition region 214 is connected to the eighth edition region 208 and the ninth edition region 209, respectively, and the other end of the fourteenth edition region 214 is connected to the fifteenth edition region 215 and then to the third edition region 203. The fifteenth edition area 215 is located at the lower portion of the ninth edition area 209, and one end of the fifteenth edition area 215 is connected to the ninth edition area 209 and the tenth edition area 210, respectively. The sixteenth edition area 216 is located at an upper portion of the twelfth edition area 212, and one end of the sixteenth edition area 216 is connected to the eleventh edition area 211 and the twelfth edition area 212, respectively, and the other end is connected to the fifth edition area 205.
Specifically, the first film bulk acoustic resonator 21 of the sixth edition of region 206, the second film bulk acoustic resonator 22 of the seventh edition of region 207, the fifth film bulk acoustic resonator 25 of the tenth edition of region 210, and the seventh film bulk acoustic resonator 27 of the twelfth edition of region 212 are located on a first straight line (as indicated by the dashed-dotted line in fig. 2) between the input terminal 11 of the second edition of region 202 and the output terminal 12 of the fourth edition of region 204. And the center lines of the first film bulk acoustic resonator 21 of the sixth edition of drawing area 206, the second film bulk acoustic resonator 22 of the seventh edition of drawing area 207 and the third film bulk acoustic resonator 23 of the eighth edition of drawing area 208 form a V-shaped structure with an angle smaller than 90 degrees, and the opening faces one side of the first straight line; the center lines of the third film bulk acoustic resonator 23 of the eighth edition of drawing region 208, the fourth film bulk acoustic resonator 24 of the ninth edition of drawing region 209, and the fifth film bulk acoustic resonator 25 of the tenth edition of drawing region 210 constitute a V-shaped structure having an angle of more than 90 °, with the opening facing the other side of the first straight line. The third film bulk acoustic resonator 23 of the eighth version of region 208, the fourth film bulk acoustic resonator 24 of the ninth version of region 209, the sixth film bulk acoustic resonator 26 of the eleventh version of region 211, the ninth film bulk acoustic resonator 32 of the fourteenth version of region 214 and the tenth film bulk acoustic resonator 33 of the fifteenth version of region 215 are located on one side of the first straight line; the eighth thin film bulk acoustic resonator 31 of the thirteenth version of the region 213 and the eleventh thin film bulk acoustic resonator 34 of the sixteenth version of the region 216 are located on the other side of the first line.
Specifically, the layout required to be used in the process of manufacturing the 2050MHz film bulk acoustic resonator filter mainly comprises a sacrificial layer layout, a lower electrode layout, an upper electrode layout, a difference frequency layer layout and a hole layer layout, as shown in figures 3-6.
Fig. 3 is a layout of a sacrificial layer in which the first to eleventh thin film bulk acoustic resonators 21 to 34 are respectively. The first sacrificial plate region 301, the second sacrificial plate region 302, the third sacrificial plate region 303, the fourth sacrificial plate region 304, the fifth sacrificial plate region 305, the sixth sacrificial plate region 306 and the seventh sacrificial plate region 307 are sacrificial layer regions of the first film bulk acoustic resonator 21, the second film bulk acoustic resonator 22, the third film bulk acoustic resonator 23, the fourth film bulk acoustic resonator 24, the fifth film bulk acoustic resonator 25, the sixth film bulk acoustic resonator 26 and the seventh film bulk acoustic resonator 27 respectively. The eighth sacrificial pattern region 308, the ninth sacrificial pattern region 309, the tenth sacrificial pattern region 310, and the eleventh sacrificial pattern region 311 are sacrificial pattern regions of the eighth thin film bulk acoustic resonator 31, the ninth thin film bulk acoustic resonator 32, the tenth thin film bulk acoustic resonator 33, and the eleventh thin film bulk acoustic resonator 34, respectively.
Wherein each resonator can be respectively provided with a plurality of edges, and the resonators are mutually connected through one edge. And the protruding contact angle-shaped part of each resonator is a release channel, each resonator can be provided with a plurality of release channels, and each resonator is provided with a plurality of release channels. The release gas enters the release channel through the release hole, then enters the sacrificial layer to corrode the sacrificial layer material into gas, and then is discharged through the release channel and the release hole.
Fig. 4 is a layout of the lower electrode layer, including a layout of the input terminal 11 and the ground terminal. Wherein the lower electrode layer comprises a first lower electrode plate area 401, a second lower electrode plate area 402, a third lower electrode plate area 403, a fourth lower electrode plate area 404, a fifth lower electrode plate area 405, a sixth lower electrode plate area 406, a seventh lower electrode plate area 407, and an eighth lower electrode plate area 408. Wherein the first lower electrode pad area 401, the third lower electrode pad area 403, and the fifth lower electrode pad area 405 are connected to a ground terminal. The second lower electrode pad 402 is connected to the input terminal 11, and the fourth lower electrode pad 404 is connected to the output terminal 12.
Wherein the first lower electrode plate region 401 corresponds to the eighth film bulk acoustic resonator 31, the second lower electrode plate region 402 corresponds to the first film bulk acoustic resonator 21, the third lower electrode plate region 403 corresponds to the ninth film bulk acoustic resonator 32, the sixth lower electrode plate region 406 corresponds to the second film bulk acoustic resonator 22 and the third film bulk acoustic resonator 23, the seventh lower electrode plate region 407 corresponds to the fourth film bulk acoustic resonator 24, the fifth film bulk acoustic resonator 25 and the tenth film bulk acoustic resonator 33, and the eighth lower electrode plate region 408 corresponds to the sixth film bulk acoustic resonator 26, the seventh film bulk acoustic resonator 27 and the eleventh film bulk acoustic resonator 34.
Fig. 5 is a layout of upper electrode layers, specifically, a first upper electrode plate region 501, a second upper electrode plate region 502, a third upper electrode plate region 503, a fourth upper electrode plate region 504, a fifth upper electrode plate region 505, and a sixth upper electrode plate region 506. Wherein the first upper electrode plate region 501 corresponds to the first film bulk acoustic resonator 21, the second film bulk acoustic resonator 22 and the eighth film bulk acoustic resonator 31, the second upper electrode plate region 502 corresponds to the third film bulk acoustic resonator 23, the fourth film bulk acoustic resonator 24 and the ninth film bulk acoustic resonator 32, the third upper electrode plate region 503 corresponds to the tenth film bulk acoustic resonator 33, the fourth upper electrode plate region 504 corresponds to the fifth film bulk acoustic resonator 25 and the sixth film bulk acoustic resonator 26, and the fifth upper electrode plate region 505 corresponds to the seventh film bulk acoustic resonator 27 and the output terminal layout region. The sixth upper electrode layout region 506 corresponds to the eleventh thin film bulk acoustic resonator 34 and the ground terminal layout region.
Fig. 6 is a layout of a difference frequency layer including a first difference frequency pattern region 601 corresponding to the eighth thin film bulk acoustic resonator 31, a second difference frequency pattern region 602 corresponding to the ninth thin film bulk acoustic resonator 32, a third difference frequency pattern region 603 corresponding to the tenth thin film bulk acoustic resonator 33, and a fourth difference frequency pattern region 604 corresponding to the eleventh thin film bulk acoustic resonator 34.
Fig. 7 is a layout of an orifice layer including a plurality of relief holes 41 surrounding each resonator. One for each release hole 41. The release gas enters the release passage through the release holes 41, then enters the sacrificial layer region to corrode the sacrificial layer material into a gas, and then is discharged through the release passage and the release holes 41. In addition, if probes (such as GSG probes) are needed to test the chip in the probe test area on the hole layer layout, the piezoelectric layer needs to be etched away to expose the lower electrode GSG for testing.
In this example, the prepared 2050MHz thin film bulk acoustic resonator filter was tested, and the test results are shown in fig. 8. Curve 1 is the S (2, 1) versus frequency curve (left vertical axis) for a thin film bulk acoustic resonator filter. Curve 2 is the return loss (right vertical axis) of S (1, 1) of the thin film bulk acoustic resonator filter, and curve 3 is the return loss (right vertical axis) of S (2, 2) of the thin film bulk acoustic resonator filter. As can be seen from FIG. 8, the 1dB bandwidth is approximately 46MHz, and the suppression levels are 56dBc and 58dBc at 1950MHz and 2150MHz, respectively.
The embodiment of the invention also provides a film bulk acoustic resonator filter assembly, which comprises any film bulk acoustic resonator filter. All technical effects of the thin film bulk acoustic resonator filter are not described herein.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. A bulk acoustic wave filter is characterized by comprising an input terminal, an output terminal, a grounding terminal, a plurality of thin film bulk acoustic resonators connected in series and a plurality of thin film bulk acoustic resonators connected in parallel;
the plurality of series-connected thin film bulk acoustic resonators includes a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator, a fourth thin film bulk acoustic resonator, a fifth thin film bulk acoustic resonator, a sixth thin film bulk acoustic resonator, and a seventh thin film bulk acoustic resonator connected in series between the input terminal and the output terminal;
the plurality of parallel thin film bulk acoustic resonators comprise an eighth thin film bulk acoustic resonator, a ninth thin film bulk acoustic resonator, a tenth thin film bulk acoustic resonator and an eleventh thin film bulk acoustic resonator, wherein one end of the eighth thin film bulk acoustic resonator is connected between the first thin film bulk acoustic resonator and the second thin film bulk acoustic resonator; one end of the ninth film bulk acoustic resonator and one end of the tenth film bulk acoustic resonator are respectively and sequentially connected to a node between the third film bulk acoustic resonator and the fifth film bulk acoustic resonator, and the other end of the ninth film bulk acoustic resonator is connected with the other end of the tenth film bulk acoustic resonator and then connected with the grounding terminal; one end of the eleventh thin film bulk acoustic resonator is connected to a node between the sixth thin film bulk acoustic resonator and the seventh thin film bulk acoustic resonator; the other ends of the eighth film bulk acoustic resonator and the eleventh film bulk acoustic resonator are respectively connected with the grounding terminal;
the distances from the centers of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the fifth film bulk acoustic resonator and the seventh film bulk acoustic resonator to a first straight line where the input terminal and the output terminal are located are smaller than a threshold value; the center of the first film bulk acoustic resonator and the center of the eighth film bulk acoustic resonator are located on a first vertical line, the center of the fourth film bulk acoustic resonator and the center of the tenth film bulk acoustic resonator are located on a second vertical line, the center of the seventh film bulk acoustic resonator and the center of the eleventh film bulk acoustic resonator are located on a third vertical line, and the first vertical line, the second vertical line and the third vertical line are respectively parallel to each other;
the layout of the film bulk acoustic resonator filter comprises a first edition of drawing area to a sixteenth edition of drawing area;
the first plate region, the third plate region and the fifth plate region are grounded terminal plate regions, the second plate region is an input terminal plate region, the fourth plate region is an output terminal plate region, the third plate region is positioned at the lower part of the layout of the filter, and the first plate region, the fifth plate region, the second plate region and the fourth plate region are respectively arranged at two sides of the layout of the filter;
the sixth edition of drawing area to the twelfth edition of drawing area are respectively the edition of drawing areas of the first film bulk acoustic resonator to the seventh film bulk acoustic resonator; an eighth version region, a ninth version region and an eleventh version region are positioned at the lower parts of the sixth version region, the seventh version region, the tenth version region and the twelfth version region;
the thirteenth to sixteenth edition of areas are edition areas of the eighth to eleventh thin film bulk acoustic resonators, respectively; the thirteenth edition of drawing area is positioned at the upper part of the sixth edition of drawing area, one end of the thirteenth edition of drawing area is respectively connected with the sixth edition of drawing area and the seventh edition of drawing area, and the other end is connected with the first edition of drawing area; the fourteenth edition of drawing area is positioned at the lower part of the eighth edition of drawing area, one end of the fourteenth edition of drawing area is respectively connected with the eighth edition of drawing area and the ninth edition of drawing area, and the other end of the fourteenth edition of drawing area is connected with the third edition of drawing area after being connected with the other end of the fifteenth edition of drawing area; the fifteenth edition region is positioned at the lower part of the ninth edition region, and one end of the fifteenth edition region is respectively connected with the ninth edition region and the tenth edition region; the sixteenth edition of drawing area is located at the upper part of the twelfth edition of drawing area, one end of the sixteenth edition of drawing area is connected with the eleventh edition of drawing area and the twelfth edition of drawing area respectively, and the other end of the sixteenth edition of drawing area is connected with the fifth edition of drawing area.
2. The bulk acoustic wave filter of claim 1, wherein the series resonant frequency and the parallel resonant frequency of the plurality of series thin film bulk acoustic resonators are the same; the series resonant frequency and the parallel resonant frequency of the plurality of parallel thin film bulk acoustic resonators are the same.
3. The bulk acoustic wave filter according to claim 1 or 2, wherein a series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as a parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators.
4. The bulk acoustic wave filter of claim 1, wherein the first thin film bulk acoustic resonator has an area of 16950 μm 2 -17050μm 2 The second and third thin film bulk acoustic resonators have an area of 14550 μm 2 -14650μm 2 The fourth and seventh thin film bulk acoustic resonators have an area of 22950 μm 2 -23050μm 2 The fifth film bulk acoustic resonator has an area of 18750 μm 2 -18850μm 2 The area of the sixth film bulk acoustic resonator is 15950 μm 2 -16050μm 2 The eighth film bulk acoustic resonator has an area of 22450 μm 2 -22550μm 2 The area of the ninth film bulk acoustic resonator is 19450 μm 2 -19550μm 2 The tenth film bulk acoustic resonator has an area of 27550 μm 2 -27650μm 2 The eleventh thin film bulk acoustic resonator has an area of 28650 μm 2 -28750μm 2 。
5. The bulk acoustic wave filter of claim 1, wherein the layout of the thin film bulk acoustic resonator filter mainly comprises a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer and a hole layer, the difference frequency layer corresponds to the plurality of parallel thin film bulk acoustic resonators, and the plurality of series thin film bulk acoustic resonators do not have the difference frequency layer; and a plurality of release holes are formed in the hole layer, each film bulk acoustic resonator is provided with a plurality of release channels, and each release channel at least corresponds to one release hole.
6. The bulk acoustic wave filter of claim 5, wherein the upper electrode layer has a thickness ofThe thickness of the lower electrode layer is +.>The thickness of the piezoelectric layer isThe difference frequency layer has a thickness of +.>
7. The bulk acoustic wave filter of claim 1, wherein centers of the third thin film bulk acoustic resonator, the fourth thin film bulk acoustic resonator, and the sixth thin film bulk acoustic resonator are located on a second straight line, the second straight line being parallel to the first straight line, and the second straight line being located on a second side of the first straight line; the eighth thin film bulk acoustic resonator and the eleventh thin film bulk acoustic resonator are located on a first side of the first line, the ninth thin film bulk acoustic resonator and the tenth thin film bulk acoustic resonator are located on a second side of the first line, the first side and the second side being opposite;
the central connecting lines of the first film bulk acoustic resonator, the second film bulk acoustic resonator and the third film bulk acoustic resonator form a first V-shaped structure with an angle smaller than 90 degrees, and an opening of the first V-shaped structure faces to a second side of the first straight line;
the central connecting lines of the second film bulk acoustic resonator, the third film bulk acoustic resonator and the fourth film bulk acoustic resonator form a second V-shaped structure with an angle smaller than 90 degrees, and an opening of the second V-shaped structure faces to the first side of the first straight line;
the central connecting lines of the third film bulk acoustic resonator, the fourth film bulk acoustic resonator and the fifth film bulk acoustic resonator form a third V-shaped structure with an angle larger than 90 degrees, and an opening of the third V-shaped structure faces to the first side of the first straight line;
the center connecting lines of the fourth film bulk acoustic resonator, the fifth film bulk acoustic resonator and the sixth film bulk acoustic resonator form a fourth V-shaped structure with an angle smaller than 90 degrees, and an opening of the fourth V-shaped structure faces to the second side of the first straight line;
and the central connecting lines of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator form a fifth V-shaped structure with an angle smaller than 90 degrees, and an opening of the fifth V-shaped structure faces to the first side of the first straight line.
8. The bulk acoustic wave filter of claim 5, wherein the release holes have a diameter of 15 μm to 25 μm.
9. A filter assembly comprising a bulk acoustic wave filter as claimed in any one of claims 1 to 8.
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