CN113539771B - Parts, method for forming coating on their surfaces and plasma reaction device - Google Patents

Abstract

The invention is suitable for the technical field of semiconductors, and discloses a method for forming a plasma-resistant coating on parts and surfaces of parts in a plasma reaction device and the plasma reaction device. The plasma reaction device comprises a reaction cavity, wherein a plasma environment is arranged in the reaction cavity, the parts are exposed in the plasma environment, the parts comprise plasma-resistant coatings coated on the surfaces of the parts, the plasma-resistant coatings comprise at least two film layers, the film layers are rare earth metal compounds, the rare earth metal compounds comprise at least one of oxides, fluorides or oxyfluorides of rare earth metal elements, and the adjacent film layers have different grain growth directions. According to the component, the plasma-resistant coating is coated on the surface of the component, so that the thermal shock resistance of the component is improved, the plasma-resistant coating can absorb thermal stress, the expansion of microcracks is prevented, and the risk that the plasma-resistant coating falls off from the surface of the component is reduced.

Description

Parts, method for forming coating on their surfaces and plasma reaction device

Technical Field

The invention relates to the field of semiconductor technology, and in particular to a component, a method for forming a coating on the surface of the component, and a plasma reaction device.

Background technique

In the manufacturing process of semiconductor devices, plasma etching is a key process for processing wafers into designed patterns.

In a typical plasma etching process, process gases (such as CF ₄ , O ₂ , etc.) form plasma under the action of radio frequency (RF) excitation. After passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, these plasmas physically bombard and chemically react with the wafer surface, thereby etching a wafer with a specific structure.

However, during the plasma etching process, a large amount of heat is released during the physical bombardment and chemical reaction, causing the etching reaction chamber to continue to heat up; in addition, after the plasma etching process is completed, the cooling effect of the refrigerator will take away the heat, causing the temperature of the etching chamber to drop. For the workpiece in the etching reaction chamber, some _plasma corrosion-resistant coatings (such as _Y2O3 coatings) are usually applied to protect the workpiece from corrosion.

Therefore, the plasma-resistant coating applied on the workpiece is actually in a thermal cycle shock environment of continuous heating and cooling. Due to the continuous accumulation of thermal stress during service, the plasma-resistant coating may cause microcracks to be generated, expanded, cracked, or even peeled off, causing the coating protection function to fail, the internal workpiece to be corroded, and other serious accidents.

How to effectively reduce the thermal stress accumulation of plasma-resistant coatings and avoid the generation, expansion, cracking and peeling of microcracks will be of great significance to improving the environmental stability of the etching reaction chamber, increasing the service life of the workpiece and reducing the operating costs of key components of the etching reaction chamber.

Summary of the invention

The first object of the present invention is to provide a component for a plasma reaction device to solve the technical problem of failure of a plasma-resistant coating caused by accumulation of thermal stress and to improve the service life of the component.

To achieve the above-mentioned purpose, the present invention provides a solution: a component for a plasma reaction device, the plasma reaction device comprising a reaction chamber, the reaction chamber being a plasma environment, the component being exposed to the plasma environment, the component comprising a plasma-resistant coating coated on the surface of the component body, the plasma-resistant coating comprising at least two film layers, the film layers being rare earth metal compounds, the rare earth metal compounds comprising at least one of oxides, fluorides or fluoride oxides of rare earth metal elements, and two adjacent film layers having different grain growth directions.

Optionally, the angles formed by the grain growth directions of two adjacent film layers and the normal line of the component body are different.

Optionally, the angles formed by the grain growth directions of two adjacent film layers and the normal line of the component body are the same, and the grain growth directions of the two adjacent film layers intersect.

Optionally, an angle formed by the growth directions of the grains of two adjacent film layers is greater than 0° and less than 90°.

Optionally, the rare earth metal element in the rare earth metal compound includes one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

Optionally, the plasma resistant coating has a densification rate of 95% to 100%.

Optionally, the plasma-resistant coating comprises: two adjacent film layers having the same composition.

Optionally, the plasma-resistant coating comprises: two adjacent film layers with different compositions, and the thermal expansion coefficients of the film layers decrease successively from the substrate surface upwards.

Optionally, the thickness of the plasma resistant coating is H, 0.001 μm≤H≤200 μm.

Optionally, the thickness of each film layer is h, 1nm≤h≤10000nm.

The second object of the present invention is to provide a method for forming a plasma resistant coating on the surface of a component, characterized in that it comprises:

Provide an evaporation source;

The evaporation source is arranged opposite to the component, and the molecular flow ejected by the evaporation source grows each film layer on the surface of the component;

Before growing the next film layer, the molecular flow of the evaporation source and the direction of the normal line of the component are adjusted so that adjacent film layers have different grain growth directions.

Optionally, the method for forming the plasma resistant coating comprises a physical vapor deposition method.

Optionally, the physical vapor deposition method includes at least one of a plasma enhanced physical vapor deposition method, a microwave assisted physical vapor deposition method, a reactive physical vapor deposition method or an ion beam assisted deposition method.

Optionally, before growing the next film layer, the component is tilted by adjusting the tilting mechanism so that adjacent film layers formed have different grain growth directions.

Optionally, before growing the next film layer, the evaporation source is tilted so that adjacent film layers formed have different grain growth directions.

The third object of the present invention is to provide a plasma reaction device, characterized in that it comprises:

A reaction chamber, wherein the reaction chamber is a plasma environment;

The above-mentioned component is exposed to the plasma environment.

Optionally, the plasma reaction device is an inductively coupled plasma reaction device, and the components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a substrate holding frame.

Optionally, the plasma reaction device is a capacitively coupled plasma reaction device, and the components include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a substrate holding frame.

Beneficial effects of the present invention:

An embodiment of the present invention provides a component for a plasma reaction device, wherein the plasma reaction device includes a reaction chamber, wherein the reaction chamber is a plasma environment, wherein the component is exposed to the plasma environment, wherein the component includes a plasma-resistant coating coated on the surface of the component body, wherein the plasma-resistant coating includes at least two film layers, wherein the film layers are rare earth metal compounds, wherein the rare earth metal compounds include at least one of oxides, fluorides or fluoride oxides of rare earth metal elements, and wherein two adjacent film layers have different grain growth directions. In this way, a large number of staggered grain boundaries are formed between two adjacent film layers through different grain growth directions. When the plasma-resistant coating is subjected to thermal stress caused by heating and cooling, these large number of staggered grain boundaries can guide the thermal stress to be staggered along the grain boundaries, thereby greatly reducing the accumulation effect of stress in the plasma-resistant coating, reducing the risk of microcracks or even shedding failure of the plasma-resistant coating, further improving the service life of the plasma-resistant coating, and better protecting the components.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

FIG1 is a schematic diagram of the structure of a component;

FIG2 is a schematic structural diagram of a plasma reaction device according to the present invention;

FIG3 is a schematic cross-sectional view of a component of the present invention;

FIG4 is a flow chart of forming a plasma-resistant coating on the surface of a component body according to the present invention;

FIG5 is a schematic diagram of a method for forming a plasma resistant coating according to the present invention;

FIG6 is a schematic cross-sectional view of another component of the present invention;

7 is a schematic cross-sectional view of another component of the present invention;

FIG8 is a schematic cross-sectional structure diagram of another component of the present invention.

Reference numerals:

100, component body; 200, plasma resistant coating;

301, bushing; 302, gas nozzle; 303, electrostatic chuck; 304, focusing ring; 305, insulating ring; 306, cover ring; 307, substrate holding frame; 308, ceramic cover plate; 309, reaction chamber;

400. enhancement source; 500. target material; 600. substrate; 700. plasma resistant coating.

Detailed ways

The plasma reaction device includes a reaction chamber, and the reaction chamber is a plasma environment. The parts are exposed to the plasma environment. Since the plasma is highly corrosive, it is necessary to coat the surface of the part body with a corrosion-resistant coating to prevent the plasma from corroding the part body. Generally speaking, as shown in FIG1 , FIG1 is a schematic structural diagram of a part, and the part body 600 is arranged relative to the molecular flow of the evaporation source, and during the deposition of the plasma-resistant coating 700, the normal direction of the part body 600 is kept parallel to the direction of the molecular flow of the evaporation source, and the plasma-resistant coating 700 is kept to grow in a columnar manner on the part body 600.

When the plasma-resistant coating 700 coated in this way is subjected to a cyclic thermal shock of heating and cooling in the etching reaction chamber 309, the thermal stress is conducted along the interface of the columnar crystals. If the deformation of the component body 600 caused by the thermal stress exceeds the critical value of the deformation that the plasma-resistant coating 700 can withstand, microcracks will easily be generated at the interface between the plasma-resistant coating 700 and the component body 600, and further extend along the grain boundaries between the columnar crystals. In severe cases, the plasma-resistant coating may even fall off, and the component body will be exposed to the plasma environment, and the plasma is likely to cause corrosion to the component body.

In order to solve the above technical problems, the present invention proposes a component for a plasma reaction device, a method for forming a plasma-resistant coating on the surface of a component, and a plasma reaction device. The surface of the component body is coated with a plasma-resistant coating 200, and the plasma-resistant coating 200 includes at least two adjacent film layers, the film layers are rare earth metal compounds, and the rare earth metal compounds include at least one of oxides, fluorides, or fluoride oxides of rare earth metal elements, and the two adjacent film layers have different grain growth directions. The plasma-resistant coating 200 can improve the service life of the component.

The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

FIG. 2 is a schematic structural diagram of a plasma reaction device according to the present invention.

Please refer to FIG. 2 , the plasma reaction device includes: a reaction chamber 309 , the reaction chamber 309 is a plasma environment; and components are exposed to the plasma environment.

The plasma reaction device also includes a base, which is used to carry the substrate to be processed, and the plasma is used to process the substrate to be processed. Since plasma is highly corrosive, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to coat the surface of the component body 100 with a plasma-resistant coating 200.

In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: bushing 301, gas nozzle 302, electrostatic chuck 303, focus ring 304, insulation ring 305, cover ring 306, substrate holding frame 307, ceramic cover plate 308 or gas connection flange (not shown). The surfaces of these components need to be coated with plasma resistant coating 200 to prevent corrosion from plasma.

In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device. Accordingly, the components exposed to the plasma environment include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma-resistant coating 200 to prevent corrosion from the plasma.

The components are described in detail below. The substrate 100 below is the component body 100:

FIG3 is a schematic cross-sectional view of a component of the present invention.

Please refer to FIG3 , the component includes: a substrate 100; a plasma-resistant coating 200 coated on the surface of the substrate 100, the plasma-resistant coating 200 includes at least two film layers, the film layers are rare earth metal compounds, the rare earth metal compounds include one or more of oxides, fluorides or oxyfluorides of rare earth metal elements, and two adjacent film layers have different grain growth directions. S represents the grain growth direction.

Although the parts are exposed to the plasma environment of the plasma reaction device, since the plasma-resistant coating 200 on the surface of the substrate 100 includes at least two film layers, and the two adjacent film layers have different grain growth directions, when the plasma-resistant coating 200 is subjected to the cyclic thermal shock of heating-cooling in the reaction chamber 309, the thermal stress is conducted along a large number of staggered crystal interfaces, which will greatly extend the thermal stress conduction distance, reduce the thermal stress accumulation effect in the plasma-resistant coating 200, and prevent the plasma-resistant coating 200 from falling off. At the same time, even if the deformation caused by the thermal stress of the substrate 100 and the plasma-resistant coating 200 is close to the critical value, microcracks are generated at the interface between the plasma-resistant coating 200 and the substrate 100, and the energy of the microcrack expansion will be absorbed by the staggered grain boundaries, preventing it from further expanding, reducing the risk of film layer falling off. Among them, the crystal interface refers to the surface where adjacent film layers contact. In addition, since the two adjacent film layers have different grain growth directions, the charge is conducted along a large number of staggered crystal interfaces, which will greatly extend the charge conduction distance, reduce the charge accumulation effect in the plasma-resistant coating 200, and prevent arc breakdown.

In one embodiment, the angles formed by the grain growth directions S of two adjacent film layers and the normal line of the substrate 100 are different, and the grain growth directions S of the two adjacent film layers are inclined to the same side of the normal line, so that when the resultant force of thermal stress in the horizontal direction is less than the critical stress value of the film layer, the thermal stress propagates along the grain boundary when subjected to thermal stress. The resultant force of thermal stress in the horizontal direction is less than the critical stress value that the adjacent film layer can withstand, and the film layer is not easy to fall off.

In another embodiment, the angles formed by the grain growth directions S of two adjacent film layers and the normal of the substrate 100 are different, and the grain growth directions S of the two adjacent film layers are respectively inclined to both sides of the normal, so the resultant force of the thermal stress in the horizontal direction can offset a part, the thermal stress is less than the critical stress of the film layer, and it can withstand greater thermal stress. Therefore, the film layer is less likely to fall off.

In practical applications, the grain growth direction S of one of the two film layers may be the normal direction, and the other film layer may be inclined toward the normal line of the substrate 100. The film layer with the grain growth direction set to the normal direction can play a transition role.

In this embodiment, the angle formed by the growth directions of the grains of two adjacent film layers is greater than 0° and less than 90°.

The rare earth metal element in the rare earth metal compound includes one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu. The rare earth metal compound includes one or more of oxides, fluorides or oxyfluorides of the rare earth metal element.

In one embodiment, the density of the plasma resistant coating 200 is 95% to 100%.

In one embodiment, the plasma resistant coating 200 includes: two adjacent film layers with the same composition. The adjacent film layers have the same composition and have the same deformation when subjected to thermal stress. By setting the grain growth directions of the two adjacent film layers to be different, the extension path of microcracks can be extended, the risk of the plasma resistant coating 200 falling off can be reduced, and the service life of the parts can be increased.

In another embodiment, the plasma resistant coating 200 includes: two adjacent film layers with different compositions, and the thermal expansion coefficients of the film layers decrease sequentially from the surface of the substrate 100 upward. When the compositions of the two adjacent film layers are different, the order of the two adjacent film layers is defined as the thermal expansion coefficients of the film layers decrease sequentially from the surface of the substrate 100 upward, in order to gradually reduce the deformation of each film layer due to thermal stress and prevent the adjacent film layers from being delaminated and falling off.

In this embodiment, the thickness of the plasma resistant coating 200 is H, where 0.001 μm ≤ H ≤ 200 μm. The greater the thickness of the plasma resistant coating 200, the higher the cost required. The thickness H of the plasma resistant coating 200 is set to 0.001 μm ≤ H ≤ 200 μm, which can save costs and also play a protective role of the plasma resistant coating 200 on the surface of the component.

In one embodiment, the thickness of each film layer is h, wherein 1 nm≤h≤10000 nm.

FIG. 4 is a flow chart of forming a plasma resistant coating on the surface of a component body 100 according to the present invention.

Please refer to Figure 4, including:

Provide an evaporation source;

The evaporation source is arranged opposite to the component, and the molecular flow ejected from the evaporation source grows each film layer on the surface of the substrate 100;

Before growing the next film layer, the direction of the molecular flow of the evaporation source and the normal line of the substrate are adjusted so that adjacent film layers have different grain growth directions.

When the plasma-resistant coating 200 coated by this formation method is subjected to a cyclic thermal shock of heating-cooling in the reaction chamber 309, the thermal stress is conducted along a large number of staggered crystal interfaces, which will greatly extend its conduction distance and reduce the thermal stress directly transmitted to the substrate 100. At the same time, even if the thermal expansion difference between the substrate 100 and the plasma-resistant coating 200 is close to the critical value, the microcracks generated at the interface between the plasma-resistant coating 200 and the substrate 100 will be absorbed by the staggered crystal boundaries, preventing them from further expansion, thereby reducing the risk of film layer shedding. Specifically, before growing the next film layer, if the thickness of the plasma-resistant coating 200 has met the requirements, the adjustment of the substrate normal direction can be stopped, thereby ending the growth of the film layer. If the thickness of the plasma-resistant coating 200 has not yet met the requirements, the substrate normal direction is continued to be adjusted to grow the next film layer until the thickness of the plasma-resistant coating 200 meets the requirements.

In one embodiment, the method for forming the plasma resistant coating 200 includes physical vapor deposition. Physical vapor deposition (PVD) is a method of vaporizing the coating material by physical methods (such as evaporation, sputtering, etc.) to deposit a film on the surface of the substrate 100. The physical vapor deposition technology has a simple process, improves the environment, is pollution-free, consumes less materials, forms a uniform and dense film, and has a strong bonding force with the substrate 100.

Specifically, please refer to Figures 5 and 6. Figure 6 is a schematic diagram of the cross-sectional structure of another component of the present invention; Figure 5 is a schematic diagram of the method for forming a plasma-resistant coating of the present invention. In the PVD device, by adjusting the tilting mechanism, the substrate 100 can be tilted at a certain angle to adjust the grain growth direction of the plasma-resistant coating 200. Figures a and c in Figure 5 form the A film layer, and Figures b and d form the B film layer and the C film layer, respectively, wherein the grain growth direction of the A film layer is parallel to the direction of the normal line of the substrate 100, and the grain growth direction of the B film layer and the grain growth direction of the C film layer are respectively biased to the two sides of the normal line.

In this embodiment, before growing the next film layer, the component is tilted by adjusting the tilting mechanism so that the adjacent film layers formed have different grain growth directions.

In other embodiments, before growing the next film layer, the evaporation source is tilted so that the adjacent film layers formed have different grain growth directions.

Since the plasma-resistant coating 200 is formed by the excited evaporation source molecules and atoms combining with the substrate atoms by van der Waals force in a high vacuum (generally less than 10 ^-4 Pa) chamber, the plasma-resistant coating 200 can be directly deposited on the substrate 100. The plasma-resistant coating 200 has a strong bonding force with the substrate 100. Therefore, there is no need to add an additional transition layer between the substrate 100 and the plasma-resistant coating 200 to match the thermal expansion coefficient, which is beneficial to reducing the PVD process cost; there is no need to perform special roughening treatment on the substrate 100 (such as sandblasting) to achieve a strong bonding force between the plasma-resistant coating 200 and the substrate 100.

Since the plasma resistant coating 200 is deposited in a high vacuum (generally less than 10-4Pa) chamber, the impurity content of the plasma resistant coating 200 is low during its formation, and the structure formed between the grains is relatively dense, with a density close to 100% of the theoretical density. Therefore, the highly dense plasma resistant coating 200 is not easily corroded and maintains structural stability when subjected to the physical bombardment and chemical action of plasma.

In one embodiment, the physical vapor deposition method includes one of plasma enhanced physical vapor deposition method, microwave assisted physical vapor deposition method, reactive physical vapor deposition method or ion beam assisted deposition method.

Specifically, FIG. 6 shows a method for forming a plasma-resistant coating 200, which includes the following steps: referring to FIG. a: setting the molecular flow of the evaporation source to be parallel to the normal direction of the substrate 100, and depositing a film layer A on the surface of the substrate 100; referring to FIG. b: tilting the substrate 100 at a certain angle, and depositing a film layer B on the surface of the film layer A; referring to FIG. c: tilting the substrate 100 at a certain angle, so that the molecular flow of the evaporation source is parallel to the normal direction of the substrate 100, and depositing a film layer A on the surface of the film layer B; referring to FIG. d: tilting the substrate 100 at a certain angle, and depositing a film layer C on the surface of the film layer A, and the deposition sequence is ABACABAC... until a film layer of the desired thickness is deposited. That is, an A film layer is inserted between the B film layer and the C film layer. Due to the transition of the A film layer, the combined forces of the B film layer and the C film layer in the horizontal direction are less than the critical stress range, the bonding force between the film layers is more stable, and the plasma-resistant coating 200 is not easy to fall off. When the plasma-resistant coating 200 coated in this way is subjected to a cyclic thermal shock of heating and cooling in the etching reaction chamber 309, the heat is conducted along a large number of staggered crystal interfaces, which greatly extends the heat conduction distance and reduces the heat directly transferred to the surface of the component. At the same time, even if the difference in thermal expansion between the surface of the component and the plasma-resistant coating 200 is close to the critical value, the microcracks generated at the interface between the plasma-resistant coating 200 and the component will be absorbed by the staggered crystal boundaries, preventing them from further expansion, thereby reducing the risk of film shedding.

FIG. 7 is a schematic cross-sectional view of another component of the present invention.

Please refer to FIG. 7 , the plasma-resistant coating 200 is coated on the substrate 100 in an ABABABAB… manner. First, the A film layer is deposited, and the molecular flow of the evaporation source is set to be parallel to the normal direction of the substrate 100. After the A film layer is deposited, the substrate 100 is tilted at a certain angle, and then the B film layer is deposited, and the ABAB… deposition sequence is continuously cycled until a film layer of the desired thickness is obtained. That is, the A film layer has no component force in the horizontal direction, and the component force of the B film layer in the horizontal direction is less than the critical stress range, so it is not easy for the film layer to fall off.

FIG8 is a schematic cross-sectional structure diagram of another component of the present invention.

Please refer to FIG8 , the plasma-resistant coating 200 is coated on the substrate 100 by the BCBCBC… method. First, the B film layer is deposited, and the molecular flow of the evaporation source is set to have a certain inclination angle with the normal direction of the substrate 100. After the B film layer is deposited, the substrate 100 is tilted at a certain angle to deposit the C film layer. The grain growth direction of the B film layer and the grain growth direction of the C film layer are respectively biased to the two sides of the normal line. The B film layer and the C film layer are deposited alternately until the film layer of the desired thickness is obtained. When subjected to thermal stress, the components of the thermal stress in the horizontal direction of the B film layer and the C film layer are opposite in direction, and the resultant force is less than the critical stress, so that the film layers are not easy to fall off.

The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly/indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims (18)

1. A component for a plasma reaction device, the plasma reaction device comprising a reaction chamber, the reaction chamber being a plasma environment, the component being exposed to the plasma environment, characterized in that the component is in a thermal cycle shock environment of continuous heating and cooling, the component comprising a plasma-resistant coating coated on the surface of the component body, the plasma-resistant coating comprising at least two film layers, the film layers being rare earth metal compounds, the rare earth metal compounds comprising at least one of oxides, fluorides or oxyfluorides of rare earth metal elements, and two adjacent film layers having different grain growth directions, so that a staggered crystal interface is formed between the two adjacent film layers, the crystal interface is used to extend the conduction distance of thermal stress and charge, and to absorb the energy of microcrack expansion. 2. The component as described in claim 1 is characterized in that the angles formed by the grain growth directions of two adjacent film layers and the normal line of the component body are different. 3. The component as described in claim 1 is characterized in that the angle formed by the grain growth directions of two adjacent film layers and the normal line of the component body is the same, and the grain growth directions of the two adjacent film layers intersect. 4. The component according to claim 1, characterized in that the angle formed by the grain growth directions of two adjacent film layers is greater than 0° and less than 90°. 5. The component according to claim 1, characterized in that the rare earth metal element in the rare earth metal compound includes one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu. 6. The component according to claim 1, wherein the density of the plasma resistant coating is 95% to 100%. 7. The component according to claim 1, characterized in that the plasma-resistant coating comprises: two adjacent film layers with the same composition. 8. The component according to claim 1, characterized in that the plasma-resistant coating comprises: two adjacent film layers with different compositions, and the thermal expansion coefficients of the film layers decrease successively from the substrate surface upward. 9. The component according to claim 1, characterized in that the thickness of the plasma resistant coating is H, 0.001 μm ≤ H ≤ 200 μm. 10 . The component according to claim 9 , wherein the thickness of each film layer is h, 1 nm ≤ h ≤ 10000 nm. 11. A method for forming a plasma-resistant coating on a component surface, comprising: Provide an evaporation source; The evaporation source is arranged opposite to the component, and the molecular flow ejected by the evaporation source grows each film layer on the surface of the component to form a plasma-resistant coating; Before growing the next film layer, adjusting the direction of the molecular flow of the evaporation source and the normal line of the component, so that the film layers have different grain growth directions, so that staggered crystal interfaces are formed between the film layers, and the crystal interfaces are used to extend the conduction distance of thermal stress and charge, and to absorb the energy of microcrack expansion; Wherein, the film layer is a rare earth metal compound, and the rare earth metal compound includes at least one of oxides, fluorides or oxyfluorides of rare earth metal elements. 12. The method for forming a plasma-resistant coating on a component surface according to claim 11, wherein the method for forming the plasma-resistant coating comprises a physical vapor deposition method. 13. The method for forming a plasma-resistant coating on the surface of a component as described in claim 12, characterized in that the physical vapor deposition method includes at least one of plasma-enhanced physical vapor deposition, microwave-assisted physical vapor deposition, reactive physical vapor deposition or ion beam-assisted deposition. 14. The method for forming a plasma-resistant coating on the surface of a component as described in claim 11, characterized in that before growing the next film layer, the component is tilted by adjusting a tilting mechanism so that adjacent film layers formed have different grain growth directions. 15. The method for forming a plasma-resistant coating on the surface of a component according to claim 11, characterized in that before growing the next film layer, the evaporation source is tilted so that adjacent film layers formed have different grain growth directions. 16. A plasma reaction device, comprising: A reaction chamber, wherein the reaction chamber is a plasma environment; The component according to any one of claims 1 to 10, wherein the component is exposed to the plasma environment. 17. The plasma reaction device according to claim 16, characterized in that the plasma reaction device is an inductively coupled plasma reaction device, and the components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a substrate holding frame. 18. The plasma reaction device according to claim 16, characterized in that the plasma reaction device is a capacitively coupled plasma reaction device, and the components include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a substrate holding frame.