CN113532540B - Suspended bridge type MEMS sensing structure - Google Patents
Suspended bridge type MEMS sensing structure Download PDFInfo
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- CN113532540B CN113532540B CN202110855711.7A CN202110855711A CN113532540B CN 113532540 B CN113532540 B CN 113532540B CN 202110855711 A CN202110855711 A CN 202110855711A CN 113532540 B CN113532540 B CN 113532540B
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- 238000001514 detection method Methods 0.000 claims abstract description 57
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011540 sensing material Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
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- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010705 motor oil Substances 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- General Physics & Mathematics (AREA)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention relates to a bridge type MEMS sensing structure, which belongs to the technical field of MEMS detection and is mainly applicable to gas sensors, pressure sensors, microphone sensors and the like. The sensor comprises two suspended sensor platforms, namely a detection platform and a comparison platform, wherein the two platforms are composed of a supporting beam, a sensing platform, a heating electrode and a sensitive electrode. The sensing platform is supported on a silicon cavity structure through a supporting beam, the heating electrode and the sensitive electrode are arranged on the sensing platform and are electrically connected with the outside through the supporting beam, and the adjustable resistor is arranged on the comparison platform to adjust the resistance value of the two platforms to be equal. The sensing structure has the advantages of low crosstalk, strong universality, high stability, low power consumption and the like.
Description
Technical Field
The invention relates to the technical field of detection of gas, pressure and the like, in particular to a bridge type MEMS sensing structure.
Background
With the continuous development of social economy, the MEMS sensor is applied to various subjects, and relates to various subjects and technologies such as electronics, machinery, materials, physics, chemistry, biology, medicine and the like, so that the MEMS sensor has wide application prospect. For example, the MEMS gas sensor is required to detect the concentration of the gas to be detected by formaldehyde generated by indoor decoration, hydrogen cyanide generated by cigarette smoke and plastic product combustion, hydrogen sulfide generated by sewage treatment and methane tank material conversion, carbon monoxide generated by fuel coal in winter, nitrogen dioxide and benzene in automobile tail gas, chlorine gas in metal smelting factories and other toxic, harmful and flammable and explosive gases; in the automotive electronics field, such as measuring air bag pressure, fuel pressure, engine oil pressure, intake pipe pressure, and tire pressure, MEMS pressure sensors are required to detect. Thus, MEMS sensors are a very promising research area.
The bridge type MEMS sensing structure can be applied to gas sensors, pressure sensors, microphone sensors and the like. The gas sensor is a detection device that converts information such as the composition and concentration of gas into information that can be used by a worker, an instrument, a computer, or the like. The device mainly comprises an electrochemical gas sensor, a semiconductor gas sensor, a catalytic combustion type gas sensor and a thermal conductivity type gas sensor. A pressure sensor is a device or apparatus that senses a pressure signal and converts the pressure signal to a usable output electrical signal according to a certain law. In particular, with the development of MEMS technology, semiconductor pressure sensors have been widely used.
With the widespread use of MEMS sensors, noise interference and increased detection sensitivity have become a technical challenge in the art. Therefore, there is a need to optimize the MEMS platform structure of a MEMS sensor so that the MEMS sensor can be implemented at low cost, low power, low interference and mass production while maintaining good sensitivity, selectivity and stability. For example, in order to obtain the effect of reducing the power consumption of the semiconductor gas sensor, the patent CN 205808982U provides a semiconductor gas sensor chip, which uses a material with better heat insulation performance as a substrate, and fixes the semiconductor gas sensor on the base through a heat insulation layer, so that the semiconductor gas sensor is formed, and although the semiconductor gas sensor has smaller package size and lower power consumption, the manufacturing process is complex, and is not beneficial to wide popularization. For example, both patent CN 102359981A and patent CN 110040678A are prepared by adopting a single sensing platform, and although the structure is easy to integrate, noise interference caused by external factors such as temperature exists, the accuracy of experimental results is affected, and the sensitivity is reduced.
By comparing the structural design of MEMS gas sensors, two references are incorporated. Reference 1: yeng Chen, pengcheng Xu, xinxin Li, yuan Ren, yonghui Deng, "High-performance H 2 sensors with selectively hydrophobic micro-plateforself-aligneduploadof Pd nanodots modifiedmesoporous In 2 O 3 sensing-material”，Sensors and Actuators B: Chemical，Volume 267, 15 August 2018, pages 83-92. Techniques for accurately uploading sensing material to a particular area of a microsensor of a single sensing platform are disclosed. Reference 2: guo Lianfeng, xu Zongke, duan Guotao, li Tie, "high performance methane sensing based on micro-heater platform", university of Zhengzhou journal (ergonomic edition), 2016 (37), 40-42. Methane gas sensors based on micro-heater platforms (MHP) were fabricated using a single sensing platform design. The single sensing platform described in the above two references suffers from the following drawbacks: when the sensing platform reaches the working temperature, the resistance of the sensing material changes after the sensing material reacts with the gas to be measured, and noise generated by environmental factors such as external temperature and the like is superimposed into useful signals, so that the signal-to-noise ratio is low and the sensitivity is poor.
Disclosure of Invention
The present invention is directed to a bridge MEMS sensing structure, which solves the above-mentioned problems.
In order to achieve the above purpose, the present invention provides the following technical solutions: the bridge type MEMS sensing structure comprises two suspended sensor platforms, namely a detection platform 1 and a comparison platform 2, wherein two test resistors are processed on the detection platform 1, namely a first detection resistor 3 and a second detection resistor 4. The comparison platform 2 is provided with two comparison resistors and two adjustable resistors, namely a first comparison resistor 5, a second comparison resistor 6, a first adjustable resistor 16 and a second adjustable resistor 17. The detection platform 1 is provided with a heating electrode 18, and the comparison platform 2 is provided with no heating electrode 18. Ideally, when the heating electrode 18 is heated to the working temperature, the resistance values of the first detection resistor 3 and the second detection resistor 4 on the detection platform 1 and the resistance values of the first comparison resistor 5 and the second comparison resistor 6 on the comparison platform 2 are equal. If the two stages are not equal due to errors such as external factors, the resistances of the two stages are adjusted to be equal by comparing the first adjustable resistor 16 and the second adjustable resistor 17 on the stage 2. When the gas reacts with the gas, the resistance values of the first detection resistor 3 and the second detection resistor 4 change, the first comparison resistor 4 and the second comparison resistor 5 are unchanged, and the concentration information of the gas to be tested can be obtained by measuring the potential difference between the fourth Pad point 10 and the fifth Pad point 11.
The bridge type MEMS sensing structure is divided into two sensing platforms, each platform supports a working area by using 4 cantilever beams 13, and the sensing platforms are suspended and isolated from a substrate 20, so that an active area is not in direct contact with a substrate, heat loss caused by heat conduction is reduced, power consumption of the sensor is greatly reduced, and response speed is improved.
The bridge MEMS sensing structure, the structure of the support beam 13 is preferably four options, and is divided into two main types, i.e. a cross method and a parallel method. Namely, the detection platform 1 and the comparison platform 2 adopt cross supporting beams; the detection platform 1 and the comparison platform 2 are parallel support beams; the detection platform 1 adopts parallel support beams, and the comparison platform 2 adopts cross support beams; the detection platform 1 adopts a cross support beam, and the comparison platform 2 adopts a parallel support beam; . Wherein, the parallel method support beam structure has small volume and is easier to integrate.
When the bridge MEMS sensing structure is used for gas sensing, the semiconductor gas-sensitive material on the sensing platform needs to have enough adsorption to the gas to be detected at a certain temperature, gas molecules can be fully diffused on the surface (and grain boundary) of the gas-sensitive material, so that the thermal resistance of the material is changed, and the concentration of the gas to be detected is measured. By changing the gas sensitive material and keeping the original silicon sensing platform, different kinds of gas sensors can be prepared.
The bridge type MEMS sensing structure is different from the traditional single sensing platform, the structure adopts the double sensing platforms, the thought of a comparison method is introduced into the comparison platform 2, the comparison platform is not provided with the heating electrode 18 compared with the detection platform 1, when the detection platform 1 reaches the working temperature, the comparison platform 2 is in a room temperature state, the resistance values of the first adjustable resistor 16 and the second adjustable resistor 17 are adjusted to be equal, accurate information to be detected can be obtained by measuring the potential difference between the two platforms, noise caused by environmental factors such as temperature can be eliminated, and the signal to noise ratio is improved.
In the bridge type MEMS sensing structure, after the temperature of the detection platform 1 is raised, external environmental factors such as temperature and the like may cause unequal resistance values of the two platforms, and the equal resistance values of the two platforms can be ensured by adjusting the first adjustable resistor 16 and the second adjustable resistor 17.
The bridge type MEMS sensing structure adopts a double-sensing platform to improve experimental detection sensitivity, and can be used for pressure sensors, microphone sensors and the like.
Drawings
For a clear and intuitive understanding of the present invention, the drawings are provided to illustrate the present invention in further detail. And which form a part of the specification, illustrate the present invention and, together with the description, serve to explain, without limitation, the invention.
Fig. 1 is a schematic diagram of the structural principle of the present invention.
Fig. 2 is a view showing a support beam structure of the 2 nd type of the present invention.
Fig. 3 is a view showing a support beam structure of the 3 rd type of the present invention.
Fig. 4 is a view showing a 4 th support beam structure of the present invention.
FIG. 5 is a cross-sectional view of a comparison of two mesa electrodes.
Detailed Description
As shown in fig. 1, the present invention provides a technical solution: the bridge type MEMS sensing structure comprises two suspended sensor platforms, namely a detection platform 1 and a comparison platform 2, wherein each platform supports a working area by using 4 cantilever beams 13, the sensing platform is suspended and isolated from a substrate 20, an active area is not in direct contact with the substrate, and two test resistors, namely a first detection resistor 3 and a second detection resistor 4, are processed on the detection platform 1. The detection resistors are fork resistors, and the metal wires 14 arranged on the supporting beams are led out from the detection resistors. The comparison platform is provided with two comparison resistors and two adjustable resistors, namely a first comparison resistor 5, a second comparison resistor 6, a first adjustable resistor 16 and a second adjustable resistor 17. The metal wires 15 laid on the support beam are led out from the resistor. The detection platform 1 is provided with a heating electrode 18, the comparison platform 2 is provided with no heating electrode 18, and the resistance values of the first detection resistor 3, the second detection resistor 4, the first comparison resistor 5 and the second comparison resistor 6 are equal when the heating electrode 18 is heated to the working temperature. If the two resistances are unequal, if a machining error occurs, the first adjustable resistor 16 and the second adjustable resistor 17 are used for adjusting, so that the resistances of the two platforms are equal. If the working temperature is set to 200 ℃, the resistance values of the first detection resistor 3 and the second detection resistor 4 at 200 ℃ are equal to the resistance values of the first comparison resistor 5 and the second comparison resistor 6 at room temperature. The fourth Pad point 10 and the fifth Pad point 11 are provided to prevent a short circuit such that the two lines are spaced apart. When the structure is applied to a gas sensor, namely when gas reacts with the gas sensor, the resistance values of the first detection resistor 3 and the second detection resistor 4 change, the first comparison resistor 5 and the second comparison resistor 6 are unchanged, and the concentration information of the gas to be tested can be obtained by measuring the potential difference between the fourth Pad point 10 and the fifth Pad point 11.
As shown in fig. 1-4, the support beam has four different configurations:
FIG. 1 shows that a cross support beam 13 is adopted for both the detection platform 1 and the comparison platform 2;
FIG. 2 shows that the detection platform 1 and the comparison platform 2 adopt parallel support beams 13;
FIG. 3 shows that the detection platform 1 adopts parallel support beams 13, and the comparison platform 2 adopts cross support beams 13;
FIG. 4 shows that the detection platform 1 adopts a cross support beam 13, and the comparison platform 2 adopts a parallel support beam 13;
all four structures are possible.
As shown in fig. 1 to 4, in order to avoid too large resistance error between the two platform resistors after the temperature of the detection platform 1 increases, two adjustable resistors, namely a first adjustable resistor 16 and a second adjustable resistor 17, are arranged below the first comparison resistor 5 and the second comparison resistor 6. The adjustable resistor can be selected from laser resistors commonly used in the semiconductor field. When the detection platform 1 reaches the working temperature and the comparison platform 2 is at room temperature, the ideal state is that the resistance values of the two platforms are equal, and the adjustable resistance at the moment is zero, namely the wire. However, after the temperature is raised, if the resistances of the first detecting resistor 3, the second detecting resistor 4 and the first comparing resistor 5 and the second comparing resistor 6 on the detecting platform 1 and the comparing platform 2 are not equal, the resistances of the first comparing resistor 5 and the second comparing resistor 6 can be adjusted by the first adjustable resistor 16 and the second adjustable resistor 17, so that the resistances of the two platforms and the four resistors are equal respectively, and the error is compensated.
As shown in fig. 5, the detection platform 1 has a heating electrode 18, while the comparison platform 2 has no heating electrode 18, and both platforms have a sensing electrode 19. When the working temperature is designed, the resistance value of the detection resistor on the detection platform 1 is equal to that of the comparison resistor at the room temperature of the comparison platform 2, so that the heating process on the comparison platform is avoided, and the power consumption is reduced.
In summary, the bridge-based MEMS sensing structure disclosed by the invention eliminates noise influence caused by external environment by arranging two sensing platforms for data comparison. The precision and sensitivity of the MEMS sensing detection structure are improved. Therefore, the bridge type MEMS sensing structure realizes high-sensitivity and high-stability real-time detection.
While the invention has been shown and described with respect to the embodiments thereof, it is to be understood that this is by way of illustration and example only and that the scope of the invention is not limited thereto. Various modifications and alterations to these embodiments will be apparent to those skilled in the art without departing from the spirit and scope of this invention, and such modifications should be considered to be within the scope of this invention. Accordingly, the scope of the invention should be assessed as that of the appended claims.
Claims (6)
1. Based on bridge formula MEMS sensing structure, its characterized in that: the bridge type MEMS sensing structure is formed by combining two suspended sensing platforms, namely a detection platform (1) and a comparison platform (2), wherein each platform supports a suspended structure sensing platform above a silicon cavity (12) through four supporting beams (13), two detection resistors (3, 4) are processed on the detection platform (1), two comparison resistors (5, 6) and two adjustable resistors (16, 17) are processed on the comparison platform, a heating electrode (18) is processed on the detection platform, the comparison platform does not have the heating electrode (18), when the heating electrode (18) is heated to the working temperature, if the temperature influences the resistance values of the two platforms to be unequal, the resistance values of the comparison resistors (5, 6) and the detection resistors (3, 4) are equal under the compensation of the adjustable resistors (16, 17), when the sensing platform reacts, the resistance values of the first detection resistor (3) and the second detection resistor (4) are changed, and the first comparison resistor (5) and the second comparison resistor (6) can obtain a potential difference between the fifth to-be-measured information through a fifth point (Pad) and a fifth point (11).
2. The bridge-based MEMS sensing structure of claim 1, wherein: the structure adopts double sensing platforms, the resistance of the two resistors is equal to that of the two resistors when the detection platform (1) reaches the working temperature and the resistance of the two resistors is equal to that of the comparison platform (2) at room temperature, the to-be-detected object in the to-be-detected platform causes resistance change, and the information of the to-be-detected object can be obtained by measuring the potential difference between the two platforms.
3. The bridge-based MEMS sensing structure of claim 1, wherein: the support beam (13) is suspended above the base, and the two sensing platforms are of suspended structures.
4. The bridge-based MEMS sensing structure of claim 1, wherein: the structure is provided with adjustable resistors (16, 17) on the comparison platform (2).
5. The bridge-based MEMS sensing structure of claim 1, wherein: the structure detection platform (1) is provided with a heating electrode (18), and the comparison platform (2) is not provided with the heating electrode (18).
6. The bridge-based MEMS sensing structure of claim 1, wherein: when the structure is at the working temperature, the resistance values of the first detection resistor (3), the second detection resistor (4), the sum of the first comparison resistor (5) and the first adjustable resistor (16) and the sum of the second comparison resistor (6) and the second adjustable resistor (17) on the comparison platform are equal.
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| CN213813431U (en) * | 2020-11-27 | 2021-07-27 | 广州奥松电子有限公司 | MEMS humidity sensor |
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| CN110494743A (en) * | 2017-04-11 | 2019-11-22 | 应美盛公司 | Gas sensing method and device |
| CN107830967A (en) * | 2017-10-31 | 2018-03-23 | 无锡职业技术学院 | A kind of MEMS air differential pressures sensor |
| CN108181350A (en) * | 2017-12-29 | 2018-06-19 | 中国矿业大学 | Resistance matching adjustment method of MEMS methane sensor |
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