CN102243195A - A resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor - Google Patents
A resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor Download PDFInfo
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- CN102243195A CN102243195A CN2011100930238A CN201110093023A CN102243195A CN 102243195 A CN102243195 A CN 102243195A CN 2011100930238 A CN2011100930238 A CN 2011100930238A CN 201110093023 A CN201110093023 A CN 201110093023A CN 102243195 A CN102243195 A CN 102243195A
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- nitrogen dioxide
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- 239000007789 gas Substances 0.000 title claims abstract description 119
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 title claims abstract description 64
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 title claims abstract description 64
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 90
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 53
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 239000011224 oxide ceramic Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000035484 reaction time Effects 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract 1
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012080 ambient air Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 239000010795 gaseous waste Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor. The sensor comprises a gas-sensitive material layer with tungsten oxide as a main gas-sensitive material, and gold conductive electrode plates arranged with an interdigitated structure, wherein the gold conductive electrode plates contact the gas-sensitive material layer. The conductive electrode plates are printed on an alumina planar medium substrate. The back side of the medium substrate is provided with a platinum heating resistor. The sensor is arranged on a pedestal with a small hole. A cap with a ventilating central hole is covered on the pedestal. Platinum conductors are respectively led out from the platinum heating resistor and the interdigitated gold conductive electrodes. The conductors led out from the platinum heating resistor are connected with a heating controlling circuit, and the conductors led out from the interdigitated gold conductive electrodes are connected with a resistance calculating circuit. The apparatus provided by the invention has a simple structure, and employs a novel gas-sensitive material. With the apparatus, an accuracy of nitrogen dioxide volume concentration detection can be improved to a PPB (parts per billion) grade. The apparatus has advantages of good gas selectivity and short reaction time.
Description
Technical field
The present invention relates to the temperature-controlled process of a kind of semiconductor type resistance-type nitrogen dioxide gas sensor, resistance-type nitrogen dioxide gas sensor instrument and resistance-type nitrogen dioxide gas sensor instrument.
Background technology
The measurement of concetration of nitrogen dioxide gas is to be subjected to paying close attention to widely at present, and Chinese scholars has been carried out a large amount of research in this respect.The part Study achievement has changed into commercial the application.But in general, the used Selectivity of Sensor of the measurement of nitrogen dioxide gas, sensitivity, this three technology index of consistance is undesirable.Intersect and select phenomenon serious, precision is lower.
As a kind of toxic gas, nitrogen dioxide is present in industrial gaseous waste in a large number, in the vehicle exhaust.According to The Law on Environmental Protection of the People's Republic of China and " The Law of the People's Republic of China on the Prevention and Control of Atmospheric Pollution "; for improving ambient air quality; prevent ecological disruption; create the cleaning adapt circumstance; protect health, clearly stipulated the concentration limits definite value of the nitrogen dioxide under the varying environment function division in the ambient air quality of being worked out.Under the grade III Standard, the concentration limits definite value of nitrogen dioxide is per day 0.12 milligram every cubic metre.Some domestic nitrogen dioxide gas checkout equipments also can't reach the accurate measurement to this lower concentration values at present.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, technical matters solved by the invention provides a kind of simple in structure, easy to operate resistance-type nitrogen dioxide gas sensor, it only need less maintenance, can in big concentration range, realize linearity to nitrogen dioxide, the high selection, the high conforming measurement of high sensitivity.
Another problem solved by the invention is the surveying instrument that utilizes above-mentioned resistance-type nitrogen dioxide gas sensor to make.
Another problem solved by the invention is the temperature-controlled process that above-mentioned surveying instrument is carried out.
Technical scheme: for solving above-mentioned first technical matters, the technical solution used in the present invention is:
A kind of resistance-type nitrogen dioxide gas sensor, comprise sensor body, described body comprises gas sensitive material layer and aluminium oxide planar medium basic unit, is printed with golden interdigitated electrodes, is printed with platinum matter heating resistor at lower surface at the upper surface of described aluminium oxide planar medium basic unit; Described gas sensitive material layer sintering in aluminium oxide planar medium basic unit and with golden interdigitated electrodes Ohmic contact.
Described gas sensitive material layer is the heterogeneous metal oxide ceramic layer with porous structure, and its porosity is in the 30-60% scope, and thickness is less than 200 microns; The gas sensitive material layer is to be that the mass content of main gas sensitive and tungstic acid is not less than 95% with tungstic acid.
The thickness of described gas sensitive material layer is 60 microns.
Described golden interdigitated electrodes has a pair of, and the distance between two described golden interdigitated electrodes is in the 20-400 micrometer range.
Described platinum matter heating resistor electrical isolation respectively and between the aluminium oxide planar medium basic unit, gas sensitive material layer, and heat conduction between described platinum matter heating resistor and aluminium oxide planar medium basic unit, the gas sensitive material layer.
In order to solve above-mentioned second problem, the technical solution adopted in the present invention is: a kind of surveying instrument that utilizes described resistance-type nitrogen dioxide gas sensor to make, comprise that there are aperture and base that can penetrating air-flow in described sensor body, centre, utilize the heating control circuit and the resistance calculations circuit of PID (proportion integration differentiation) principle, described resistance-type nitrogen dioxide sensor is installed in the aperture of base, aperture is arranged, lid that can penetrating air-flow in the middle of being stamped on base; Described platinum matter heating resistor and golden interdigitated electrodes are drawn platinum matter lead respectively, and the platinum matter lead that described platinum matter heating resistor is drawn links to each other with heating control circuit, and the platinum matter lead that described golden interdigitated electrodes is drawn links to each other with the resistance calculations circuit.
The platinum matter lead that described platinum matter heating resistor is drawn has the resistance that is not more than 5% platinum matter heating resistor.
The temperature-controlled process of above-mentioned surveying instrument, this method comprises the steps:
A) platinum matter heating resistor is subjected to accurate discrete a plurality of pulse power supplies, the heating before the gas sensitive material layer is measured,
B) after pulse is passed through, the temperature of gas sensitive material layer reaches working temperature, and keeps this temperature;
C) resistance of gas sensitive material layer is measured, measured and finish the preceding temperature of measurement that back refrigerating gas sensitive material layer reaches setting, carry out next one repeating step measuring period then a), b), c).
The working temperature of above-mentioned gas sensitive material layer is higher than environment temperature, and the degree of accuracy of working temperature reaches ± and 2 ℃, the temperature error scope of gas sensitive material layer integral body is at ± 10 ℃.
The working temperature of above-mentioned gas sensitive material layer is in 200 ℃ of-600 ℃ of scopes.
Beneficial effect: compared with prior art, advantage of the present invention is: simple in structure, owing to adopt novel gas sensitive, the precision improvement of the volumetric concentration of feasible detection nitrogen dioxide is to the rank of PPB (parts per billion), and have better gas selectivity, reaction time fast.
Description of drawings
Fig. 1 is a resistance-type nitrogen dioxide gas sensor sectional view;
Fig. 2 is a resistance-type nitrogen dioxide gas sensor front view (FV);
Fig. 3 is a resistance-type nitrogen dioxide gas sensor back view;
Fig. 4 is a resistance-type nitrogen dioxide gas sensor scheme of installation;
Fig. 5 is the resistance variations figure of resistance-type nitrogen dioxide gas sensor when nitrogen dioxide gas concentration is 0-0.3ppm;
Fig. 6 is that humidity is to the influence of resistance-type nitrogen dioxide gas sensor under variable concentrations nitrogen dioxide gas environment.
Embodiment
The present invention will be further described below in conjunction with accompanying drawing.
Referring to Fig. 1,2,3,4, a kind of resistance-type nitrogen dioxide gas sensor, comprise body 1, this body 1 comprises gas sensitive material layer 11 and aluminium oxide planar medium basic unit 13, is printed with golden interdigitated electrodes 12, is printed with platinum matter heating resistor 14 at lower surface at the upper surface of aluminium oxide planar medium basic unit 13; Gas sensitive material layer 11 sintering in aluminium oxide planar medium basic unit 13 and with golden interdigitated electrodes 12 Ohmic contact.Wherein gas sensitive material layer 11 is for having the heterogeneous metal oxide ceramic layer of porous structure, and its porosity is in the 30-60% scope, and thickness is less than 200 microns, preferred 60 microns; Be main gas sensitive, add other metal oxide semiconductors again and mix and constitute gas sensitive material layers 11 and be printed in the extremely resistant to elevated temperatures aluminium oxide planar medium basic unit with tungstic acid, sintering under 1000 ℃ of high temperature, produce very open porous micromechanism, so have the larger area surface to contact with object gas.The mass content of tungstic acid is not less than 95% in the gas sensitive material layer 11, surplus is other metal oxide semiconductors.
Above-mentioned golden interdigitated electrodes 12 has a pair of, and the distance between two described golden interdigitated electrodes 12 is in the 20-400 micrometer range.
The platinum matter heating resistor 14 of aluminium oxide planar medium basic unit 13 lower surfaces is isolated with aluminium oxide planar medium basic unit 13 and gas sensitive material layer 11 on electric.Aspect heat transferred, platinum matter heating resistor 14, aluminium oxide planar medium basic unit 13 and gas sensitive material layer 11 are to have good conductive performance.
A kind of surveying instrument that utilizes above-mentioned resistance-type nitrogen dioxide gas sensor to make, comprise that there is base 2, heating control circuit and the resistance calculations circuit of aperture and the penetrating air-flow of energy above-mentioned resistance-type nitrogen dioxide sensor body 1, centre, the resistance-type nitrogen dioxide sensor is installed in the aperture of base 2, aperture is arranged, lid that can penetrating air-flow in the middle of being stamped on base 2; Platinum matter heating resistor and golden interdigitated electrodes are drawn platinum matter lead respectively, and the platinum matter lead that platinum matter heating resistor is drawn links to each other with heating control circuit, and the platinum matter lead that golden interdigitated electrodes is drawn links to each other with the resistance calculations circuit.The platinum matter lead that platinum matter heating resistor is drawn has the resistance that is not more than 5% platinum matter heating resistor.
The temperature-controlled process of above-mentioned surveying instrument, a) platinum matter heating resistor is subjected to accurate discrete a plurality of pulse power supplies, the heating before the gas sensitive material layer is measured; B) after pulse is passed through, the temperature of gas sensitive material layer reaches working temperature, and keeps this temperature; C) resistance of gas sensitive material layer is measured, measured and finish the preceding temperature of measurement that back refrigerating gas sensitive material layer reaches setting, carry out next one repeating step measuring period then a), b), c).
The working temperature of gas sensitive material layer is higher than environment temperature, and working temperature is in 200 ℃ of-600 ℃ of scopes, and the degree of accuracy of working temperature reaches ± 2 ℃, and the temperature error scope of gas sensitive material layer integral body is at ± 10 ℃.
Embodiment: above-mentioned surveying instrument is exposed in the object gas to be measured, measures a resistance value corresponding with object gas concentration by the reaction of resistance-type nitrogen dioxide gas sensor.
During use, the gas sensitive material layer 11 of resistance-type nitrogen dioxide gas sensor at first is heated to the working temperature of setting, and operating temperature range is 400 ℃ ± 20 ℃ here; The implementation method that its gas sensitive material layer 11 is heated to working temperature is to connect the pulse voltage of adjustable width and Cycle Length at the two ends of platinum matter heating resistor 14.Referring to resistance-type nitrogen dioxide gas sensor scheme of installation shown in Figure 4, wiring pin a is connected with heating control circuit.Because technological reason, the resistance that is printed on the platinum matter heating resistor 14 of aluminium oxide planar medium basic unit 13 lower surfaces has ± 5% variance, in order to compensate the heating-up temperature error that may cause thus, the resistance of platinum matter heating resistor 14 is measured in real time, and according to this resistance value calculate Cycle Length and pulse width the variable quantity that should regulate, be applied to the two ends of platinum matter heating resistor 14 in time.This feedback regulation process can reach error free tracking in theory and regulate owing to use PID (proportion integration differentiation) algorithm.
Referring to resistance-type nitrogen dioxide gas sensor scheme of installation shown in Figure 4, the wiring pin b that golden interdigitated electrodes 12 is drawn is connected with the sensor resistance counting circuit.Under different nitrogen dioxide gas concentration environment, the characteristic of semiconductor that gas sensitive material layer 11 is shown directly is reflected on the resistance variations at the wiring pin b two ends that golden interdigitated electrodes 12 drawn.Fig. 5 is the resistance variations characteristic pattern of resistance-type nitrogen dioxide gas sensor when nitrogen dioxide gas concentration is 0-0.3ppm.Demonstrate the increase along with nitrogen dioxide gas concentration among the figure, the resistance at the wiring pin b two ends that golden interdigitated electrodes 12 is drawn is also along with the increase of linearity, and typical change in resistance scope is between 20 kilohms to 80 kilohms.
Referring to resistance-type nitrogen dioxide gas sensor scheme of installation shown in Figure 4, four wiring pins of golden interdigitated electrodes 12 and platinum matter heating resistor 14 are distributed in four angles respectively.Its purpose just is a, b not only plays the connection effect on electric, structurally also play the weight of carrying sensor, it is suspended in the free space, like this, all high-temperature part of resistance-type nitrogen dioxide gas sensor directly do not contact with lid with the firm banking of sensor, and gas to be measured again can be by gas sensitive material layer 11 with being stopped simultaneously.
Different types of and nitrogen dioxide do not had intersect the gas of chemical reaction and nitrogen dioxide gas, find that the resistance-type nitrogen dioxide gas sensor has good selectivity simultaneously by the resistance-type nitrogen dioxide gas sensor.Data presentation nitrogen dioxide respectively with sulphuric dioxide, carbon monoxide, sulfuretted hydrogen, methane simultaneously when the resistance-type nitrogen dioxide gas sensor, the resistance variations of resistance-type nitrogen dioxide gas sensor.The resistance that has about 10% except sulphuric dioxide increases the variation, and the influence of other three kinds of gases is negligible.
Humidity be one to the influential key factor of gas sensor.Chemical reaction can take place on the surface of gas sensitive material layer with portion gas in aqueous vapor.This chemical reaction has changed the concentration of gas sensitive material laminar surface and body charge carrier, thereby directly is reflected on the resistance value of gas sensitive material layer.Even if chemical reaction does not take place, aqueous vapor still can change the surface state of gas sensitive material layer.Fig. 6 is under variable concentrations nitrogen dioxide gas environment, and humidity is to the influence of resistance-type nitrogen dioxide gas sensor, wherein reference resistance RO=20 kilo-ohm.Curve map from Fig. 6 as can be seen, the caused resistance variations to the resistance-type nitrogen dioxide gas sensor of humidity will be higher than under higher nitrogen dioxide gas concentration environment (being higher than 0.25ppm) in (being lower than 0.05ppm) under the very low nitrogen dioxide gas concentration environment.Even the curve map among Fig. 6 it can also be seen that under very low nitrogen dioxide gas concentration environment (being lower than 0.05ppm) the caused resistance variations to the resistance-type nitrogen dioxide gas sensor of humidity still is lower than 10%.This shows that resistance-type nitrogen dioxide gas sensor of the present invention has great moisture-resistant degree interference performance.
Claims (10)
1. a resistance-type nitrogen dioxide gas sensor is characterized in that, comprises sensor body (1), and described body (1) comprises gas sensitive material layer (11) and aluminium oxide planar medium basic unit (13); Upper surface in described aluminium oxide planar medium basic unit (13) is printed with golden interdigitated electrodes (12), is printed with platinum matter heating resistor (14) at lower surface; Described gas sensitive material layer (11) sintering aluminium oxide planar medium basic unit (13) go up and with golden interdigitated electrodes (12) Ohmic contact.
2. resistance-type nitrogen dioxide gas sensor according to claim 1 is characterized in that, described gas sensitive material layer (11) is for having the heterogeneous metal oxide ceramic layer of porous structure, its porosity in the 30-60% scope, thickness is less than 200 microns; Gas sensitive material layer (11) is to be that the mass content of main gas sensitive and tungstic acid is not less than 95% with tungstic acid.
3. resistance-type nitrogen dioxide gas sensor according to claim 2 is characterized in that, the thickness of described gas sensitive material layer (11) is 60 microns.
4. resistance-type nitrogen dioxide gas sensor according to claim 1 is characterized in that, described golden interdigitated electrodes (12) has a pair of, and the distance between two described golden interdigitated electrodes (12) is in the 20-400 micrometer range.
5. resistance-type nitrogen dioxide gas sensor according to claim 1, it is characterized in that, described platinum matter heating resistor (14) electrical isolation respectively and between the aluminium oxide planar medium basic unit (13), gas sensitive material layer (11), and heat conduction between described platinum matter heating resistor (14) and aluminium oxide planar medium basic unit (13), the gas sensitive material layer (11).
6. surveying instrument that utilizes the described resistance-type nitrogen dioxide gas sensor of claim 1 to make, it is characterized in that, comprise that there is base (2), the heating control circuit that utilizes the PID principle and the resistance calculations circuit of aperture and the penetrating air-flow of energy described sensor body (1), centre, described resistance-type nitrogen dioxide sensor is installed in the aperture of base (2), aperture is arranged, lid that can penetrating air-flow in the middle of being stamped on base (2); Described platinum matter heating resistor (14) and golden interdigitated electrodes (12) are drawn platinum matter lead respectively, the platinum matter lead that described platinum matter heating resistor (14) is drawn links to each other with heating control circuit, and the platinum matter lead that described golden interdigitated electrodes (12) is drawn links to each other with the resistance calculations circuit.
7. surveying instrument according to claim 6 is characterized in that, the platinum matter lead that described platinum matter heating resistor (14) is drawn has the resistance that is not more than 5% platinum matter heating resistor (14).
8. the temperature-controlled process of claim 6 or 7 described surveying instruments is characterized in that, this method comprises the steps:
A) platinum matter heating resistor (14) is subjected to accurate discrete a plurality of pulse power supplies, the heating before gas sensitive material layer (11) is measured,
B) after pulse is passed through, the temperature of gas sensitive material layer (11) reaches working temperature, and keeps this temperature;
C) resistance of gas sensitive material layer (11) is measured, measured and finish the preceding temperature of measurement that back refrigerating gas sensitive material layer (11) reaches a setting, carry out next one repeating step measuring period then a), b), c).
9. temperature-controlled process according to claim 8, it is characterized in that, the working temperature of described gas sensitive material layer (11) is higher than environment temperature, and the degree of accuracy of working temperature reaches ± 2 ℃, and the whole temperature error scope of gas sensitive material layer (11) is at ± 10 ℃.
10. temperature-controlled process according to claim 8 is characterized in that, the working temperature of described gas sensitive material layer (11) is in 200 ℃ of-600 ℃ of scopes.
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| CN2011100930238A CN102243195A (en) | 2011-04-13 | 2011-04-13 | A resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor |
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| CN103245698A (en) * | 2012-02-09 | 2013-08-14 | 财团法人工业技术研究院 | Gas detection system, device and method |
| CN103512916A (en) * | 2012-06-29 | 2014-01-15 | 重庆凌卡分析仪器有限公司 | High-stability thermal conductance type gas sensor |
| CN107782767A (en) * | 2016-08-26 | 2018-03-09 | 深迪半导体(上海)有限公司 | A kind of gas sensor heating dish and processing method |
| CN109459469A (en) * | 2018-11-07 | 2019-03-12 | 西安交通大学 | A kind of virtual sensors array and preparation method thereof |
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| CN107782767A (en) * | 2016-08-26 | 2018-03-09 | 深迪半导体(上海)有限公司 | A kind of gas sensor heating dish and processing method |
| CN107782767B (en) * | 2016-08-26 | 2022-01-07 | 深迪半导体(绍兴)有限公司 | Heating plate of gas sensor and processing method |
| CN109459469A (en) * | 2018-11-07 | 2019-03-12 | 西安交通大学 | A kind of virtual sensors array and preparation method thereof |
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Application publication date: 20111116 |