CN113517568B - A design method for dual-band spin-selective transmission metasurface device - Google Patents
A design method for dual-band spin-selective transmission metasurface device Download PDFInfo
- Publication number
- CN113517568B CN113517568B CN202110594993.XA CN202110594993A CN113517568B CN 113517568 B CN113517568 B CN 113517568B CN 202110594993 A CN202110594993 A CN 202110594993A CN 113517568 B CN113517568 B CN 113517568B
- Authority
- CN
- China
- Prior art keywords
- selective transmission
- spin
- dual
- basic structure
- metasurface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 26
- 238000013461 design Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000002983 circular dichroism Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001142 circular dichroism spectrum Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0046—Theoretical analysis and design methods of such selective devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Bioinformatics & Computational Biology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
本发明公开了一种双频带自旋选择透射超表面器件设计方法，包括S1、基于高阻硅，设计基本结构，基本结构为H型介质柱；S2、步骤S1中的基本结构按周期性排布，结构周期排布所组成的超表面实现双频段的自旋选择透射。本发明公开了一种实现双频带自旋选择透射太赫兹超表面器件，本发明提出的超表面是由单层全硅材料构成，显著降低了加工难度并节约了制作成本，本发明可以实现两种频段内的自旋选择透射性，并在两种频段内实现两种相反的手性效应，这为太赫兹自旋选择透射性器件的设计提供了新思路。
The present invention discloses a method for designing a dual-band spin-selective transmission metasurface device, comprising S1, designing a basic structure based on high-resistance silicon, wherein the basic structure is an H-type dielectric column; S2, the basic structure in step S1 is arranged periodically, and the metasurface composed of the periodic arrangement of the structure realizes dual-band spin-selective transmission. The present invention discloses a terahertz metasurface device that realizes dual-band spin-selective transmission. The metasurface proposed by the present invention is composed of a single-layer all-silicon material, which significantly reduces the processing difficulty and saves the production cost. The present invention can realize spin-selective transmission in two frequency bands and realize two opposite chiral effects in the two frequency bands, which provides a new idea for the design of terahertz spin-selective transmission devices.
Description
Technical Field
The invention belongs to the technical field of novel artificial electromagnetic materials and terahertz science and technology, and particularly relates to a design method of a dual-band spin selective transmission super-surface device.
Background
Chirality is a special property that indicates that there is no mirror symmetry in the object, just like the left and right hands of a human, they cannot overlap no matter how we move or rotate. These chiral structures are widely present in nature, such as amino acids, sugars and crystals. The optical response of chiral media to Circularly Polarized (CP) light can be described as optically active and Circular Dichroism (CD), and is widely used in the fields of medical diagnostics, communications, and the like. However, due to the matching of the dimensional dimensions of chiral materials and the wavelength of incident light, the chiral optical response of these materials is very weak.
In order to effectively enhance chiral optical response in natural media, periodically arranged metamaterials have been proposed to improve chiral optical properties by several orders of magnitude. However, the complexity and high cost of three-dimensional fabrication have hampered the development of spin-selective transmission metamaterials. In recent years, planar chiral metamaterials, known as chiral supersurfaces, have well overcome the above challenges, which have attracted considerable attention in theoretical research and practical applications because of their different transmitted or reflected responses to two orthogonal circular polarizations. Based on the above characteristics, many polarizing devices have been proposed for use in the fields of CD spectrum, optical sensing, and the like. Most chiral supersurfaces are proposed for enhancing single band CDs or enabling dynamic manipulation of single band chiral optical responses, but multiband chiral optical responses have not yet been achieved.
Therefore, the invention designs a single-layer full-silicon terahertz super-structure atom, and the super-surface formed by the super-structure atom has the characteristic of dual-band chiral response. And, this supersurface has opposite spin-selective transmission at both frequency bands.
Disclosure of Invention
The present invention is directed to solving or improving the above-described problems by providing a method for designing a dual-band spin-selective transmissive subsurface device.
In order to achieve the above purpose, the invention adopts the following technical scheme:
A design method of a dual-band spin-selective transmission super-surface device specifically comprises the following steps:
S1, designing a basic structure based on high-resistance silicon, wherein the basic structure is an H-shaped dielectric column;
S2, the basic structures in the step S1 are periodically arranged, and the super surface formed by the periodic arrangement of the structures realizes the spin selective transmission of the dual frequency bands.
Further, in step S1, the basic structure is an H-type dielectric pillar, and specific parameters thereof depend on specific operating frequencies.
Further, the super surface of the step S2 works in a frequency band near 1.2 and 1.6THz, the total thickness of silicon is 500 mu m, the etching height of a dielectric column is 200 mu m, the length of rectangular strips at two sides of the dielectric column is 50-80 mu m, the width of rectangular strips at two sides of the dielectric column is 15-30 mu m, an included angle of 45 degrees is formed between the rectangular strips and the x-axis, the center distance between the rectangular strips at two sides of the dielectric column is 70-100 mu m, and the width of the column connecting the rectangular strips at two sides is 10-25 mu m. The period of the whole unit is 140-180 μm.
The design method of the dual-band spin-selective transmission super-surface device provided by the invention has the following beneficial effects:
the invention discloses a terahertz super-surface device for realizing dual-band spin selective transmission, which is composed of a single-layer all-silicon material, so that the processing difficulty is remarkably reduced, the manufacturing cost is saved, the spin selective transmission in two frequency bands can be realized, and two opposite chiral effects are realized in the two frequency bands, so that a new thought is provided for the design of the terahertz spin selective transmission device.
The invention can realize dual-band spin selective transmission in terahertz wave band, which provides a new scheme for chiral super-surface of chiral multiband and broadband.
Meanwhile, the dual-band spin selective transmission super surface designed by the invention has opposite chiral responses in various frequency bands, which provides a new direction for the application in the following sensing and medical fields.
Drawings
Fig. 1 (a) is a perspective view of a single unit atom, and (b) is a plan view of a single unit atom.
Fig. 2 (a) shows the transmission coefficient of a single atomic atom at different circular polarization incidence, and (b) shows the CD of a single atomic atom at different incidence wavelengths.
Fig. 3 (a) is a response of the supersurface to 1.2THz incident circular polarization and (b) is a response of the supersurface to 1.6THz incident circular polarization.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
Embodiment one, referring to fig. 1, the design method of the dual-band spin-selective transmission super-surface device according to the present embodiment specifically includes the following steps:
s1, designing a basic structure so that the basic structure can realize spin selective transmission of dual frequency bands.
S2, periodically arranging the basic structure designed in the step one.
The designs described above are all based on high resistance silicon with a thickness of 500 μm. In the first step, the basic structure is an H-shaped dielectric column. In the invention, the super surface works in a frequency band near 1.2 and 1.6THz, the total thickness of silicon is t 1+t2 =500 μm, the etching heights of dielectric columns are t 2 =200 μm, the lengths of rectangular strips on two sides of the dielectric columns are l 1 =70 μm, the widths are w 1 =22 μm, and an included angle of 45 degrees is formed between the rectangular strips and the x axis. The center-to-center spacing of the rectangular bars on either side of the dielectric pillar is i 2 = 90 μm, and the width of the pillar connecting the rectangular bars on either side is w 2 = 16 μm. The period of the whole cell is p=150 μm.
The second embodiment specifically includes:
S1, designing a basic structure so that the basic structure can realize spin selective transmission of dual frequency bands. As shown in fig. 1, the basic structure is an H-shaped dielectric pillar. In the invention, the super surface works in the frequency range near 1.2 and 1.6THz, and as can be seen from fig. 1 (a), the total thickness of silicon is t 1+t2 =500 μm, and the etching heights of dielectric pillars are t 2 =200 μm. Fig. 1 (b) is a top view of the unit. Rectangular bars on either side of the dielectric pillar were l 1 = 70 μm long and w 1 = 22 μm wide and were at 45 ° angle to the x-axis. The center-to-center spacing of the rectangular bars on either side of the dielectric pillar is i 2 = 90 μm, and the width of the pillar connecting the rectangular bars on either side is w 2 = 16 μm. The period of the whole cell is p=150 μm. As in fig. 2 (a), the "+" and "-" in the subscripts represent right-hand circular polarization and left-hand circular polarization, respectively. Taking "t -+" as an example, it represents the transmission coefficient of the right-handed circular polarization incident and the left-handed circular polarization emergent. T -+ is much larger than the other three results when the incident terahertz wave is around 1.2THz, and t +- is much larger than the other three results when the incident terahertz wave is around 1.6 THz. As shown in fig. 2 (b), in agreement with the result in fig. 1 (a), when the incident terahertz wave is in the vicinity of 1.2THz, the incident left-handed circularly polarized wave is polarized and converted into right-handed circularly polarized wave by the cell, and the incident right-handed circularly polarized wave cannot pass through the cell. When the incident terahertz wave is near 1.6THz, the chiral response exhibited by the cell is opposite to the frequency band near 1.2 THz.
S2, as shown in FIG. 3, the designed basic structures are periodically arranged according to the period of P=150μm, and the size of the composed super surface is 1.2X1.2cm 2. As shown in fig. 3 (a), when a right-hand circularly polarized wave of 1.2THz is incident on the super surface, the right-hand circularly polarized wave will be reflected, and after the left-hand circularly polarized wave is incident on the super surface, almost only the right-hand circularly polarized component exists in the outgoing wave. As shown in fig. 3 (b), the chiral response produced by the supersurface is opposite to that produced by the incident frequency of 1.2THz when the incident frequency is 1.6 THz.
In conclusion, the super surface provided by the invention is made of a single-layer all-silicon material, so that the processing difficulty is remarkably reduced and the manufacturing cost is saved. The invention can realize spin selective transmission in two frequency bands. The invention can realize two opposite chiral effects in two frequency bands, and provides a brand new platform for the application of the terahertz super-surface in the fields of medical treatment, communication and the like.
Although specific embodiments of the invention have been described in detail with reference to the accompanying drawings, it should not be construed as limiting the scope of protection of the present patent. Various modifications and variations which may be made by those skilled in the art without the creative effort are within the scope of the patent described in the claims.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110594993.XA CN113517568B (en) | 2021-05-28 | 2021-05-28 | A design method for dual-band spin-selective transmission metasurface device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110594993.XA CN113517568B (en) | 2021-05-28 | 2021-05-28 | A design method for dual-band spin-selective transmission metasurface device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113517568A CN113517568A (en) | 2021-10-19 |
| CN113517568B true CN113517568B (en) | 2025-02-07 |
Family
ID=78065078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110594993.XA Active CN113517568B (en) | 2021-05-28 | 2021-05-28 | A design method for dual-band spin-selective transmission metasurface device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113517568B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497945B (en) * | 2022-02-17 | 2023-04-21 | 成都第三象限未来科技有限公司 | Ultra-narrow band electromagnetic wave asymmetric transmission super-structure device |
| CN115047547B (en) * | 2022-05-26 | 2023-07-11 | 成都信息工程大学 | Construction method of dual-frequency terahertz space wave control device |
| CN118642211B (en) * | 2024-06-04 | 2025-01-24 | 成都信息工程大学 | Terahertz metadevice capable of generating observable lateral displacement of optical spin Hall effect and its application in two-dimensional control of optical spin Hall effect |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265790A (en) * | 2019-04-30 | 2019-09-20 | 重庆邮电大学 | A broadband terahertz quarter-wave plate based on H-shaped structure |
| CN112558209A (en) * | 2020-12-17 | 2021-03-26 | 桂林电子科技大学 | All-dielectric super-surface color filter based on H-shaped array |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107171076B (en) * | 2017-05-27 | 2020-08-04 | 西南大学 | A Multiband Circular Polarizer Based on Chiral Metasurface |
| US11011834B2 (en) * | 2017-06-27 | 2021-05-18 | Florida State University Research Foundation, Inc. | Metamaterials, radomes including metamaterials, and methods |
| CN208690497U (en) * | 2018-08-16 | 2019-04-02 | 南京邮电大学 | A graphene broadband tunable circularly polarized metasurface |
| CN111240173B (en) * | 2020-01-17 | 2021-02-02 | 北京理工大学 | Metasurface holography method based on polarization and orbital angular momentum encryption |
| CN111817013B (en) * | 2020-07-28 | 2022-01-21 | 西北工业大学 | Chiral metamaterial structure with asymmetric transmission characteristic and design method |
| CN212571355U (en) * | 2020-08-24 | 2021-02-19 | 苏州迈斯维通信技术有限公司 | Circularly polarized super-surface antenna |
-
2021
- 2021-05-28 CN CN202110594993.XA patent/CN113517568B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265790A (en) * | 2019-04-30 | 2019-09-20 | 重庆邮电大学 | A broadband terahertz quarter-wave plate based on H-shaped structure |
| CN112558209A (en) * | 2020-12-17 | 2021-03-26 | 桂林电子科技大学 | All-dielectric super-surface color filter based on H-shaped array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113517568A (en) | 2021-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113517568B (en) | A design method for dual-band spin-selective transmission metasurface device | |
| Yang et al. | Spin-selective transmission in chiral folded metasurfaces | |
| Tsilipakos et al. | Toward intelligent metasurfaces: the progress from globally tunable metasurfaces to software‐defined metasurfaces with an embedded network of controllers | |
| Kenney et al. | Octave-spanning broadband absorption of terahertz light using metasurface fractal-cross absorbers | |
| CN107340559B (en) | High efficiency and broad band circular polarization switching device and method based on super clever surface | |
| Hajian et al. | Active metamaterial nearly perfect light absorbers: a review | |
| Chen et al. | Wideband tunable cross polarization converter based on a graphene metasurface with a hollow-carved “H” array | |
| JP5671455B2 (en) | Optical metapolarizer device | |
| Zhang et al. | Vanadium dioxide-based bifunctional metamaterial for terahertz waves | |
| Sieber et al. | Reconfigurable broadband infrared circularly polarizing reflectors based on phase changing birefringent metasurfaces | |
| CN106707559B (en) | Function element based on graphene two dimension Meta Materials | |
| CN110441842A (en) | One kind being based on VO2And the multifunction device of graphene mixing Meta Materials | |
| CN102981205B (en) | Sub-wavelength rectangular ring array quarter wave plate and fabrication method thereof | |
| CN105103035B (en) | Include the optical diode of the component made of Meta Materials | |
| Liu et al. | A VO_2 film-based multifunctional metasurface in the terahertz band | |
| Chen et al. | Absorption enhancement in double-layer cross-shaped graphene arrays | |
| CN108761616B (en) | Multi-band high-reflection flexible wave plate and preparation method thereof | |
| CN111273467A (en) | Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface | |
| CN103293572B (en) | TE polarization spectrum selective absorber | |
| CN101750751A (en) | Terahertz polarization beam splitter | |
| Li et al. | A review: Active tunable terahertz metamaterials | |
| He et al. | Mid-infrared reconfigurable all-dielectric metasurface based on Ge2Sb2Se4Te1 phase-change material | |
| Jia et al. | Multi-functional dual-band polarization converter based on graphene and vanadium dioxide metasurfaces | |
| Fan et al. | Tunable and reconfigurable dual-band chiral metamirror | |
| CN114755847B (en) | A VO2-based switchable terahertz beam control device and its preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |