CN113410596B - Substrate integrated waveguide filter based on single-mode and double-mode mixing - Google Patents
Substrate integrated waveguide filter based on single-mode and double-mode mixing Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2082—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with multimode resonators
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Abstract
本发明公开了一种基于单双模混合的基片集成波导滤波器，包括三层介质基板、介质基板的上金属层、介质基片的下层金属层堆积而成，在每层介质基片上设置多个圆柱形的金属化通孔，通孔排列分布为矩形构成谐振腔。设置在第一金属层和第二金属层的两个相同的L型槽线馈电网络作为滤波器的输入和输出，通过第二金属层和第三金属层的矩形槽线将第一双模腔的能量向第一单模腔和第二单模腔内进行耦合。相对于传统的基于单模、多腔的基片集成波导滤波器，本发明的基于单双模混合的基片集成波导滤波器通过单模和双模混合技术实现了通带内四个极点和带外三个传输零点，叠层结构具有更小的尺寸，适用频段广。
The invention discloses a substrate integrated waveguide filter based on single and dual mode mixing, which comprises three layers of dielectric substrates, an upper metal layer of the dielectric substrate, and a lower metal layer of the dielectric substrate. A plurality of cylindrical metallized through holes are arranged and distributed in a rectangular shape to form a resonant cavity. Two identical L-shaped slot line feeding networks arranged on the first metal layer and the second metal layer are used as the input and output of the filter, and the first dual-mode The energy of the cavity is coupled into the first single-mode cavity and the second single-mode cavity. Compared with the traditional single-mode, multi-cavity-based substrate integrated waveguide filter, the single-mode and dual-mode hybrid-based substrate integrated waveguide filter of the present invention realizes the four poles in the passband and the dual-mode hybrid technology. Three out-of-band transmission zeros, the stacked structure has a smaller size, and is suitable for a wide range of frequency bands.
Description
Technical Field
The invention relates to the technical field of microwaves, in particular to a substrate integrated waveguide filter based on single-mode and double-mode mixing.
Background
Since the introduction of the concept of substrate-integrated waveguides, attention has been paid by various university scholars and engineers at home and abroad, and the concept of substrate-integrated waveguides has similar advantages of medium-filled rectangular waveguides: low insertion loss, easy processing, easy integration, etc.
The existing substrate dual-mode-based integrated waveguide filter structure at home and abroad constructs a two-pole band-pass filter through a corroded slot line on a dielectric substrate and a metalized disturbance through hole disturbance mode or a four-pole band-pass filter constructed by cascading two dual-mode cavities, and has the advantages of narrow bandwidth, less transmission zero and higher loss.
Disclosure of Invention
Based on the above, in order to solve the defects in the prior art, a substrate integrated waveguide filter based on single-mode and double-mode mixing, which has a laminated structure and has three transmission zeros, is provided.
A substrate integrated waveguide filter based on single-mode and double-mode mixing comprises a first metal layer, a first dielectric plate, a second metal layer, a second dielectric plate, a third metal layer, a third dielectric plate and a fourth metal layer which are sequentially stacked;
the first metal layer comprises a first feed network connector, two groups of first slot lines and two groups of second slot lines, wherein the two groups of first slot lines and the two groups of second slot lines are etched on the first metal layer; the first groove line is parallel to the central line of the first metal layer, one end of the first groove line is communicated with the edge of the first metal layer, and the other end of the first groove line is communicated with the second groove line; the second slot line is perpendicular to the first slot line, and the other end of the second slot line deviates from the direction of the central line of the first metal layer; a first feed network is formed between the two groups of first slot lines; the first feed network joint is fixedly arranged at the end part of the first feed network, and the width of the first feed network joint is the same as that of the first feed network;
the first metal layer is provided with a plurality of first through holes which are uniformly distributed along the edge of the first metal layer, the first dielectric plate is provided with a plurality of first metalized through holes corresponding to the first through holes, and the first metalized through holes form a first single-mode resonant cavity;
a first rectangular slot line is arranged on the second metal layer at the diagonal position of the second dielectric slab; a second rectangular slot line is arranged on the third metal layer at the other diagonal position of the second dielectric slab;
a plurality of second metalized through holes are uniformly formed in the second dielectric plate along the edge of the second dielectric plate, and form a first dual-mode resonant cavity; a second through hole and a third through hole corresponding to the second metalized through hole are respectively arranged on the second metal layer and the third metal layer;
the fourth metal layer has the same structure as the first metal layer, and comprises a second feed network connector, two groups of third slot lines and two groups of fourth slot lines, wherein the two groups of third slot lines and the two groups of fourth slot lines are etched on the fourth metal layer, the two groups of third slot lines are symmetrical about the central line of the first metal layer, and the two groups of fourth slot lines are symmetrical about the central line of the first metal layer; the third slot line is parallel to the central line of the fourth metal layer, one end of the third slot line is communicated with the edge of the fourth metal layer, and the other end of the third slot line is communicated with the fourth slot line; the fourth slot line is perpendicular to the third slot line, and the other end of the fourth slot line deviates from the direction of the central line of the fourth metal layer; a second feed network is formed between the two groups of third slot lines; the second feed network joint is fixedly arranged at the end part of the second feed network, and the width of the second feed network joint is the same as that of the second feed network;
and a plurality of uniformly distributed fourth through holes are formed in the fourth metal layer along the edge of the fourth metal layer, a plurality of third metalized through holes corresponding to the fourth through holes are formed in the third dielectric plate, and the third metalized through holes form a second single-mode resonant cavity.
Further, the first rectangular slot line has a distance d relative to the center of the second dielectric slab, and the center line of the first rectangular slot line and the diagonal line of the second dielectric slab form an included angle θ;
the second rectangular slot line has a distance d relative to the center of the second dielectric slab, and the center line of the second rectangular slot line forms an included angle theta with the diagonal line of the second dielectric slab.
Furthermore, the center point of the first metal layer is offset by a certain distance relative to the center of the first rectangular slot line; and the center point of the fourth metal layer is offset by a certain distance relative to the center of the second rectangular slot line.
Further, the first metal layer and the fourth metal layer are symmetrical with respect to the axis of the second dielectric plate.
Further, the first dielectric plate, the second metal layer, the second dielectric plate, the third metal layer and the third dielectric plate have the same shape.
Compared with the prior art, the invention has the following remarkable advantages:
(1) and a feed network of the filter is formed by the first slot line and the second slot line etched on the first metal layer and the fourth metal layer, and the required flexible bandwidth requirement is realized by changing the size of the feed network in the cavity.
(2) The sizes of the first rectangular slot line and the second rectangular slot line of the second metal layer and the third metal layer meet the required coupling coefficient and the position of a transmission zero point, and the effect of the cutoff skirt band is improved.
(3) Three resonant cavity cavities are formed by surrounding a plurality of metalized through holes on a dielectric substrate, the size of the resonant cavity is changed to meet the central frequency required by a pass band, and the physical size of the filter is reduced by the design of a laminated structure, so that the substrate integrated waveguide filter based on single-mode and double-mode mixing has the characteristics of low loss, low radiation, wider stop band and high power capacity and high integration level, and is very suitable for a communication front end with high integration level and low loss.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a single-mode and double-mode hybrid-based substrate integrated waveguide filter according to the present invention;
FIG. 2 is a side view of a substrate integrated waveguide filter based on single and dual mode mixing;
FIG. 3 is a top view of a first metal layer of a substrate integrated waveguide filter based on single-mode and dual-mode mixing according to the present invention;
FIG. 4 is a top view of a second metal layer of a substrate integrated waveguide filter based on single-mode and dual-mode mixing according to the present invention;
fig. 5 is a topological structure diagram of the substrate integrated waveguide filter based on single-mode and double-mode mixing according to the present invention.
FIG. 6 is a graph of the frequency response of a filter in an embodiment of the present invention;
fig. 7 is an exploded view of a filter in an embodiment of the invention.
Wherein: 10. a first metal layer; 11. a first slot line; 12. a second slot line; 17. a first feed network; 18. a first feed network connection; 19. a first through hole; 20. a first dielectric plate; 21. a first metallized via; 30. a second metal layer; 31. a first rectangular slot line; 32. a second through hole; 40. a second dielectric plate; 41. a second metallized via; 50. a third metal layer; 51. a second rectangular slot line; 52. a third through hole; 60. a third dielectric plate; 61 a third metallized via; 70. a fourth metal layer; 71. a third slot line; 72. a fourth slot line; 77. a second feed network; 78. a second feed network connection; 79. and a fourth via.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present application. The first and second elements are both elements, but they are not the same element.
A substrate integrated waveguide filter based on single-mode and double-mode mixing is disclosed, as shown in the attached figures 1-4, and comprises a first metal layer 10, a first dielectric plate 20, a second metal layer 30, a second dielectric plate 40, a third metal layer 50, a third dielectric plate 60 and a fourth metal layer 70 which are sequentially stacked; the first dielectric plate 20, the second metal layer 30, the second dielectric plate 40, the third metal layer 50 and the third dielectric plate 60 have the same shape.
A plurality of first through holes 19 which are uniformly distributed are formed in the first metal layer 10 along the edge of the first metal layer, a plurality of first metalized through holes 21 corresponding to the first through holes 19 are formed in the first dielectric plate 20, and a first single-mode resonant cavity is formed by the plurality of first metalized through holes 21;
the first metal layer 10 comprises a feed network connector 18 and two groups of first slot lines 11 and two groups of second slot lines 12 which are etched on the first metal layer 10 and are symmetrical about a central line of the first metal layer 10, wherein the first slot lines 11 are parallel to the central line of the first metal layer 10, one end of each first slot line is communicated with the edge of the first metal layer 10, and the other end of each first slot line is communicated with the second slot lines 12; the second slot line 12 is perpendicular to the first slot line 11, and the other end of the second slot line deviates from the direction of the center line of the first metal layer 10; a feed network 17 is formed between the two groups of first slot lines 11; the feed network joint 18 is fixedly arranged at the end part of the feed network 17, and the width of the feed network joint is the same as that of the feed network 17;
a first rectangular slot line 31 is arranged on the second metal layer 30 at a diagonal position of the second dielectric slab 40; a second rectangular slot line 51 is arranged on the third metal layer 50 at the other diagonal position of the second dielectric slab 40;
a plurality of second metalized through holes 41 are uniformly formed in the second dielectric plate 40 along the edge of the second dielectric plate 40, and the plurality of second metalized through holes 41 form a first dual-mode resonant cavity; a second through hole 32 and a third through hole 52 corresponding to the second metalized through hole 41 are respectively arranged on the second metal layer 30 and the third metal layer 50;
the first rectangular slot line (31) has a distance d relative to the center of the second dielectric plate (40), and the center line of the first rectangular slot line (31) forms an included angle theta with the diagonal line of the second dielectric plate (40);
the second rectangular slot line (51) and the center of the second dielectric slab (40) have a distance d, and the center line of the second rectangular slot line (51) and the diagonal line of the second dielectric slab (40) form an included angle theta.
A first rectangular slot line 31 is arranged on the second metal layer 30 on the diagonal line of the second dielectric slab 40; a second rectangular slot line 51 is arranged on the third metal layer 50 on the other diagonal line of the second dielectric slab 40; the first rectangular slot line 31 has a distance d relative to the center of the second dielectric slab 40, and the center line of the first rectangular slot line 31 and the diagonal line of the second dielectric slab 40 form an angle θ, and θ ≠ 0; the second rectangular slot line 51 has a distance d from the center of the second dielectric slab 40, and the center line of the second rectangular slot line 51 and the diagonal line of the second dielectric slab 40 form an angle θ, and θ ≠ 0. In an embodiment of the present invention, the first rectangular slot line 31 has an angle of 90 degrees with respect to a diagonal line of the second dielectric plate 40, that is, the first rectangular slot line 31 is perpendicular to the diagonal line of the second dielectric plate 40, and the second rectangular slot line 51 has an angle of 90 degrees with respect to the diagonal line of the second dielectric plate 40. While controlling M by changing the positions of the first rectangular slot line 31 and the second rectangular slot line 5112/M13And M24/M34The ratio of coupling coefficients of (A) is shown in FIG. 5, in which 1 and 4 represent TE101Modes, 2 and 3 represent TE102And TE201Mode, realized by a substrate integrated waveguide filter as shown in FIG. 1The topology described is shown.
The fourth metal layer 70 has the same structure as the first metal layer 10, the fourth metal layer 70 includes a second feed network connector 78, and two sets of third slot lines 71 and two sets of fourth slot lines 72 etched on the fourth metal layer 70 and symmetrical with respect to a center line of the fourth metal layer 70, the third slot lines 71 are parallel to the center line of the fourth metal layer 70, and one end of each third slot line is communicated with an edge of the fourth metal layer 70, and the other end of each third slot line is communicated with the fourth slot lines 72; the fourth slot line 72 is perpendicular to the third slot line 71, and the other end of the fourth slot line deviates from the center line direction of the fourth metal layer 70; a second feed network 77 is formed between the two groups of the third slot lines 71; a second feeding network connector 78 is fixedly arranged at the end of the second feeding network 77, and the width of the second feeding network connector is the same as that of the second feeding network 77;
the fourth metal layer 70 is provided with a plurality of uniformly distributed fourth through holes 79 along an edge thereof, the third dielectric plate 60 is provided with a plurality of third metalized through holes 61 corresponding to the fourth through holes 79, and the plurality of third metalized through holes 61 form a second single-mode resonant cavity.
The center point of the first metal layer 10 is offset with a certain distance relative to the center of the first rectangular slot line 31; the center point of the fourth metal layer 70 is offset from the center of the second rectangular slot line 51 by a certain distance. And the first metal layer 10 and the fourth metal layer 70 are symmetrical with respect to the axis of the second dielectric plate 40.
Specifically, the size of the first single-mode resonant cavity and the size of the second single-mode resonant cavity are used for adjusting TE101The resonant frequency of the mode reaches two resonant frequencies at the center in the control pass band; the size of the first dual-mode resonant cavity is used for adjusting TE102And TE201Resonant frequency of a mode, and TE of the first dual-mode resonator102And TE201The mode resonance frequencies are located at the lowest and highest resonance points within the pass band. The sizes of the first slot line 11 and the second slot line 12 on the first metal layer 10 and the fourth metal layer 70 and the first rectangular slot line 31 and the second rectangular slot line etched on the second metal layer and the third metal layer51 determines the first and fourth poles of the single-dual mode hybrid based substrate integrated waveguide filter to control the pass band width; the positions of the first rectangular slot line 31 and the second rectangular slot line 51 etched in the second metal layer and the third metal layer determine the zero position of the substrate integrated waveguide filter based on single-mode and double-mode mixing. As shown in figure 6, the center frequency of the filter is 10GHz, the 3dB fractional bandwidth is 13.01%, the maximum insertion loss in a pass band is 0.93, the return loss is better than 20dB, and the transmission zero frequencies are respectively positioned at 6.74GHz, 8.50GHz and 10.97 GHz.
Specifically, in the present embodiment, the relative dielectric constant of the first dielectric plate 20, the second dielectric plate 40, and the third dielectric plate 60 is 2.65, and the thickness is 1 mm; a first single-mode resonator in the first dielectric plate 20 is excited from the feeding network connection 18 and the feeding network 17 of the first metal layer 10, a first double-mode resonator in the second dielectric plate 40 is excited by coupling energy through the first rectangular slot line 31 of the second metal layer, a second single-mode resonator in the third dielectric plate 60 is excited by coupling energy through the second rectangular slot line 51 of the third metal layer, and the output is output through the feeding network connection 18 and the feeding network connection 17 of the fourth metal layer 70.
In another embodiment of the present invention, the angle of the first rectangular slot line 31 with respect to the diagonal line of the second dielectric plate 40 is an arbitrary angle not equal to 0, and the angle of the second rectangular slot line 51 with respect to the diagonal line of the second dielectric plate 40 is the same as the angle of the first rectangular slot line 31 with respect to the diagonal line of the second dielectric plate 40, as shown in fig. 7.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (5)
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