CN113371989A - Splitting method and splitting device for semiconductor chip - Google Patents
Splitting method and splitting device for semiconductor chip Download PDFInfo
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- CN113371989A CN113371989A CN202110581531.4A CN202110581531A CN113371989A CN 113371989 A CN113371989 A CN 113371989A CN 202110581531 A CN202110581531 A CN 202110581531A CN 113371989 A CN113371989 A CN 113371989A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000005520 cutting process Methods 0.000 claims abstract description 83
- 239000002245 particle Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical group O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 108
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 54
- 239000001569 carbon dioxide Substances 0.000 claims description 54
- 238000003698 laser cutting Methods 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 13
- 239000008187 granular material Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
- C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The application discloses a semiconductor chip splitting method and a semiconductor chip splitting device, wherein the semiconductor chip splitting method comprises the following steps: moving the glass substrate along a preset cutting area by using a first laser, and cutting the preset cutting area of the glass substrate to form a plurality of holes at the preset cutting area on the glass substrate; and moving the preset cutting area of the glass substrate by using a second laser, and carrying out heating treatment on the preset cutting area of the glass substrate to form a plurality of chip particles with preset sizes. In this application, when carrying out the lobe of a leaf to the semiconductor chip, use first laser to handle the glass substrate in advance to predetermine cutting area on the glass substrate and form the hole of arranging along predetermineeing the route, use the second laser to carry out heat treatment to the glass substrate afterwards, owing to predetermine the hole of cutting area department and significantly reduced the joint strength between each chip granule and provided stable lobe of a leaf route, can promote lobe of a leaf efficiency and lobe of a leaf effect greatly.
Description
Technical Field
The application relates to the technical field of glass breaking, in particular to a breaking method and a breaking device of a semiconductor chip.
Background
In the process of processing a semiconductor chip, a glass substrate of the semiconductor chip is subjected to a breaking process to form a plurality of chip particles of a predetermined size.
However, the glass substrate is generally cracked by the knife mold, and due to the high hardness of the glass substrate, when the glass substrate is cracked by the knife mold, the cracked portion of the glass substrate is cracked to have a large edge, which results in poor cracking effect.
Disclosure of Invention
The application provides a semiconductor chip splitting method and a semiconductor chip splitting device, which can improve the splitting effect of a semiconductor chip.
In a first aspect, the present application provides a method for breaking a semiconductor chip, where the semiconductor chip includes a glass substrate, a plurality of chips disposed on the glass substrate, and a carrier film covering a surface of the glass substrate, and the glass substrate has a preset cutting area; the splitting method of the semiconductor chip comprises the following steps:
s10, moving the glass substrate along a preset cutting area of the glass substrate by using a first laser, and cutting the preset cutting area of the glass substrate to form a plurality of holes on the preset cutting area of the glass substrate;
and S20, moving the glass substrate along the preset cutting area by using a second laser, and carrying out heating treatment on the preset cutting area of the glass substrate to form a plurality of chip particles with preset sizes.
In some embodiments of the present application, before the step S10, the method for breaking the semiconductor chip further includes:
s30, emitting infrared laser by a laser;
and S40, processing the infrared laser emitted by the laser through the Bezier cutting head so as to emit the first laser from the Bezier cutting head.
In some embodiments of the present application, the power of the first laser is greater than a first preset power.
In some embodiments of the present application, the second laser is a carbon dioxide laser.
In some embodiments of the present application, the step S20 includes:
s21, emitting the carbon dioxide laser by a carbon dioxide laser;
s22, shaping the carbon dioxide laser emitted by the carbon dioxide laser through the beam shaper, so that the intensity distribution of the carbon dioxide laser emitted by the beam shaper is uniform;
and S23, changing the propagation path of the carbon dioxide laser emitted from the beam shaper through a scanning galvanometer so that the carbon dioxide laser emitted from the scanning galvanometer moves along the preset cutting area of the glass substrate.
In some embodiments of the present application, after the step S23, the step S20 further includes:
s24, condensing the carbon dioxide laser emitted from the scanning galvanometer through a condensing mirror;
and S25, heating the preset cutting area of the glass substrate by using the carbon dioxide laser collected by the collecting mirror to form a plurality of chip particles with preset sizes.
In some embodiments of the present application, after the step S20, the method for breaking the semiconductor chip further includes:
and S50, stretching the carrier film to enlarge the distance between the split chip particles.
In a second aspect, the present application further provides a device for splitting a semiconductor chip, where the semiconductor chip includes a glass substrate, a plurality of chips disposed on the glass substrate, and a carrier film covering the surface of the glass substrate, and the glass substrate has a preset cutting area; the splitting device of the semiconductor chip comprises:
the first laser cutting assembly is used for generating first laser and moving the first laser along the preset cutting area of the glass substrate to cut the preset cutting area of the glass substrate so as to form a plurality of holes on the preset cutting area of the glass substrate;
and the second laser cutting assembly is used for generating second laser and moving the second laser along the preset cutting area of the glass substrate to heat the preset cutting area of the glass substrate so as to form a plurality of chip particles with preset sizes.
In some embodiments of the present application, the power of the first laser is greater than a first preset power of the first laser.
In some embodiments of the present application, the second laser is a carbon dioxide laser.
The beneficial effect of this application does: when carrying out the lobe of a leaf to semiconductor chip, use first laser to handle glass substrate in advance, form the hole of arranging along predetermineeing the route with predetermineeing the cutting zone on glass substrate, use the second laser to carry out heat treatment to glass substrate afterwards, owing to predetermine the hole of cutting zone department and significantly reduced the joint strength between each chip granule and provide stable lobe of a leaf route, can utilize expend with heat and contract with cold's principle to make glass substrate take place the separation lobe of a leaf along predetermineeing the route by oneself, form the chip granule of a plurality of predetermined sizes, thereby can promote lobe of a leaf efficiency and lobe of a leaf effect greatly.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or related technologies of the present application, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor chip according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating a semiconductor chip breaking step according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a second laser cutting assembly according to an embodiment of the present disclosure.
Reference numerals:
10. a semiconductor chip; 11. a glass substrate; 12. a chip; 13. presetting a cutting area; 21. a carbon dioxide laser; 22. a beam shaper; 23. scanning a galvanometer; 24. a collection mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The application provides a semiconductor chip splitting method and a semiconductor chip splitting device, which aim to solve the problem that in the processing process of a semiconductor chip, a glass substrate is generally split in a knife die splitting mode, so that the splitting position of the glass substrate is broken to a larger edge, and the splitting effect is poor.
In one aspect, the present application provides a method for breaking a semiconductor chip, as shown in fig. 1, the semiconductor chip 10 includes a glass substrate 11, a plurality of chips 12 disposed on the glass substrate 11, and a carrier film covering a surface of the glass substrate 11, where the glass substrate 11 has a preset cutting area 13.
The chips 12 are arranged at intervals, the preset cutting area 13 is located in the gap area between adjacent chips 12, and when the semiconductor chip 10 is cracked, the glass substrate 11 is processed along the preset cutting area 13 to form a plurality of chip particles with preset sizes, so that the semiconductor chip 10 is cracked.
It should be noted that each chip particle has one or more chips 12, and the predetermined size of the chip particle can be selected according to practical situations, which is not limited in the present application. Specifically, as shown in fig. 2, the method for breaking the semiconductor chip 10 includes:
s10, moving the glass substrate 11 along the preset cutting area 13 by using a first laser, and cutting the preset cutting area 13 of the glass substrate 11 to form a plurality of holes on the glass substrate 11 at the preset cutting area 13;
s20, moving along the preset cutting area 13 of the glass substrate 11 by using a second laser, and performing a heating process on the preset cutting area 13 of the glass substrate 11 to form a plurality of chip particles with a predetermined size.
It should be noted that, the preset cutting area 13 of the glass substrate 11 is processed for the first time by using the first laser, so as to form a plurality of holes at the preset cutting area 13 on the glass substrate 11, and the plurality of holes are sequentially arranged along the moving path of the first laser, and then the preset cutting area 13 on the glass substrate 11 is heated by the second laser, so that the glass substrate 11 is automatically separated and cracked along the moving path of the first laser by using the principle of thermal expansion and cold contraction, and a plurality of chip particles with predetermined sizes are formed.
It can be understood that, after a plurality of holes are formed in the preset cutting area 13 on the glass substrate 11, the connection strength between each chip particle is greatly reduced, and then an external force is applied to the preset cutting area 13 on the glass substrate 11, so that the glass substrate 11 can be easily and efficiently cracked along the moving path of the first laser, and the glass substrate 11 is automatically separated and cracked in a second laser heating mode, so that the crack of the glass substrate 11 can be prevented from being greatly cracked, and the crack effect and the crack efficiency are improved.
In an embodiment, before the step S10, the method for breaking semiconductor chips further includes:
s30, emitting infrared laser by a laser;
and S40, processing the infrared laser emitted by the laser through the Bezier cutting head so as to emit the first laser from the Bezier cutting head. A first laser.
It can be understood that, compare with gaussian beam, the focus light beam of the first laser of first laser through the transmission of bessel cutting head is not V-arrangement light beam, but the diameter is little, the focal depth is long, the focus light beam that collimation precision is high, consequently, when adopting the first laser cutting glass substrate 11 of first laser, the tapering of the cutting department on the glass substrate 11 is less or even does not have the tapering to can promote cutting efficiency, prevent that the lobe of a leaf department of glass substrate 11 from appearing great edge breakage.
In order to further improve the cutting effect of the first laser, in this embodiment, the power of the first laser is greater than a first preset power.
It should be noted that the principle of cutting the glass substrate 11 by the first laser is that the first laser generates a self-focusing phenomenon in the glass substrate 11, and when the laser is focused inside the transparent material, the nonlinear polarization caused by light propagation inside the transparent material changes the propagation characteristic of the light, so that the laser is focused forward, which is called a self-focusing phenomenon. When the first laser with higher power is used for cutting the glass substrate 11, the super-strong light beam formed by self-focusing forms a silk thread with a very long focal depth in the glass, and the energy of the high peak value directly gasifies the glass at the penetration position of the silk thread to form a hole.
It should be noted that the first predetermined power may be selected according to actual conditions, and is related to factors such as thickness and material of the glass, and generally, when the power of the first laser is greater than the first predetermined power, the first laser may form a hole penetrating through the glass substrate 11 on the glass substrate 11.
In an embodiment, the second laser is a carbon dioxide laser.
It can be understood that the longer wavelength of the carbon dioxide laser prevents damage to the glass substrate 11 when heated, thereby further improving the splitting effect. However, if the glass substrate 11 is not pre-cut by the first laser, but the glass substrate 11 is directly cut by the carbon dioxide laser to complete the breaking, the carbon dioxide laser needs to have a very high power, and the cutting effect and efficiency of the carbon dioxide laser are poor for the glass substrate 11 with a large thickness.
And in this application, when carrying out the lobe of a leaf to semiconductor chip 10, use the first laser of high power to handle glass substrate 11 in advance, form the hole of arranging along predetermineeing the route with predetermineeing cutting zone 13 on glass substrate 11, thereby accomplish the preliminary treatment, use the carbon dioxide laser to carry out heat treatment to glass substrate 11 afterwards, owing to predetermine the hole of cutting zone 13 department and significantly reduced the joint strength between each chip granule and provided stable lobe of a leaf route, make need not to use the more powerful carbon dioxide laser can accomplish the heat treatment to glass substrate 11, can promote lobe of a leaf efficiency and lobe of a leaf effect, can reduce manufacturing cost simultaneously.
In this embodiment, the power of the carbon dioxide laser may be smaller than a second preset power, which is smaller than the first preset power, so as to reduce the breaking cost of the semiconductor chip 10 and prevent the high-power carbon dioxide laser from damaging the glass substrate 11, and the second preset power may be selected according to actual conditions, generally speaking, the power of the carbon dioxide laser may meet the requirement of the heating breaking process on the glass substrate 11.
Specifically, the step S20 includes:
s21, emitting the carbon dioxide laser by a carbon dioxide laser 21;
s22, shaping the carbon dioxide laser emitted from the carbon dioxide laser 21 by the beam shaper 22, so that the intensity distribution of the carbon dioxide laser emitted from the beam shaper 22 is uniform;
it should be noted that the beam shaper 22, also called a beam converter, is an optical device capable of changing the shape of the laser beam, and can shape the laser beam to make the intensity distribution of the laser beam more uniform, so as to improve the heating effect of the second laser.
S23, changing a propagation path of the carbon dioxide laser emitted from the beam shaper 22 by the scanning galvanometer 23 so that the carbon dioxide laser emitted from the scanning galvanometer 23 moves along the preset cutting zone 13 of the glass substrate 11.
It should be noted that the scanning galvanometer 23 is an optical device that can change the propagation path of the laser beam, so that the laser beam can move along a predetermined path.
In an embodiment, after the step S23, the step S20 further includes:
s24, condensing the carbon dioxide laser beam emitted from the scanning galvanometer 23 by a condensing mirror 24;
s25, heating the preset cutting area 13 of the glass substrate 11 using the carbon dioxide laser condensed by the condensing mirror 24 to form a plurality of chip particles of a predetermined size.
It should be noted that the focusing mirror 24 is an optical device that can focus the laser beam to increase the intensity of the laser beam, and the focusing mirror 24 is used to focus the carbon dioxide laser beam, so as to increase the heating efficiency of the carbon dioxide laser beam.
In the present application, after the step S20, the method for breaking the semiconductor chip 10 may further include:
and S50, stretching the carrier film to enlarge the distance between the split chip particles.
The carrier film can be stretched in a mechanical mode, the distance between the split chip particles is enlarged, the chip particles are convenient to collect, and meanwhile, the split chip particles possibly in an adhesion state have a splitting effect.
In an embodiment, the carrier film may be disposed on a side of the glass substrate 11 away from the chip 12 for carrying the glass substrate.
Based on the semiconductor chip splitting method, the application also provides a semiconductor chip splitting device, and the semiconductor chip splitting method is applied to the semiconductor chip splitting device.
The semiconductor chip 10 includes a glass substrate 11, a plurality of chips 12 disposed on the glass substrate 11, and a carrier film covering the surface of the glass substrate 11, wherein the glass substrate 11 has a preset cutting area 13.
Specifically, the splitting apparatus for the semiconductor chip 10 includes a first laser cutting assembly and a second laser cutting assembly 20.
The first laser cutting assembly is used for generating first laser, and cutting the preset cutting area 13 of the glass substrate 11 by moving the first laser along the preset cutting area 13 of the glass substrate 11, so as to form a plurality of holes at the preset cutting area 13 on the glass substrate 11; the second laser cutting assembly 20 is configured to generate a second laser, and perform a heating process on the preset cutting area 13 of the glass substrate 11 by moving the second laser along the preset cutting area 13 of the glass substrate 11 to form a plurality of chip particles with a predetermined size.
The first laser may be laser light obtained after infrared laser light passes through the bessel cutting head, and the second laser light may be carbon dioxide laser light.
In an embodiment, the power of the first laser is greater than a first preset power.
As shown in fig. 3, the second laser cutting assembly 20 includes a carbon dioxide laser 21, a beam shaper 22, a scanning galvanometer 23, and a collector mirror 24.
Wherein the carbon dioxide laser 21 is configured to emit the carbon dioxide laser; the beam shaper 22 is used for shaping the carbon dioxide laser emitted by the carbon dioxide laser 21, so that the intensity distribution of the carbon dioxide laser emitted from the beam shaper 22 is uniform; the scanning galvanometer 23 is used for changing the propagation path of the carbon dioxide laser emitted from the beam shaper 22, so that the carbon dioxide laser emitted from the scanning galvanometer 23 moves along the preset cutting area 13 of the glass substrate 11; the focusing mirror 24 is used to focus the carbon dioxide laser beam emitted from the scanning galvanometer 23.
It should be noted that the first laser cutting assembly may further include a beam shaper 22, a scanning galvanometer 23, and the like.
The beneficial effect of this application does: when carrying out the lobe of a leaf to semiconductor chip 10, use the first laser of high power to handle glass substrate 11 in advance, form the hole of arranging along predetermineeing the route with predetermineeing cutting area 13 on glass substrate 11, thereby accomplish the preliminary treatment, use the second laser to carry out heat treatment to glass substrate 11 afterwards, owing to predetermine the hole of cutting area 13 department and reduced the joint strength between each chip granule greatly and provided stable lobe of a leaf route, can utilize the principle of expend with heat and contract with cold to make glass substrate 11 take place the separation lobe of a leaf along predetermineeing the route by oneself, form a plurality of chip particles of predetermined size, thereby can promote lobe of a leaf efficiency and lobe of a leaf effect greatly.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. The splitting method of the semiconductor chip is characterized in that the semiconductor chip comprises a glass substrate, a plurality of chips arranged on the glass substrate and a bearing film covering the surface of the glass substrate, wherein the glass substrate is provided with a preset cutting area; the splitting method of the semiconductor chip comprises the following steps:
s10, moving the glass substrate along a preset cutting area of the glass substrate by using a first laser, and cutting the preset cutting area of the glass substrate to form a plurality of holes on the preset cutting area of the glass substrate;
and S20, moving the glass substrate along the preset cutting area by using a second laser, and carrying out heating treatment on the preset cutting area of the glass substrate to form a plurality of chip particles with preset sizes.
2. The method for breaking semiconductor chips as claimed in claim 1, wherein before the step S10, the method for breaking semiconductor chips further comprises:
s30, emitting infrared laser by the first laser through a laser;
and S40, processing the infrared laser emitted by the laser through the Bezier cutting head so as to emit the first laser from the Bezier cutting head.
3. The method for breaking semiconductor chips according to claim 2, wherein the power of the first laser is greater than a first preset power.
4. The method for breaking a semiconductor chip according to claim 1 or 3, wherein the second laser is a carbon dioxide laser.
5. The method for breaking semiconductor chips according to claim 4, wherein the step S20 comprises:
s21, emitting the carbon dioxide laser by a carbon dioxide laser;
s22, shaping the carbon dioxide laser emitted by the carbon dioxide laser through the beam shaper, so that the intensity distribution of the carbon dioxide laser emitted by the beam shaper is uniform;
and S23, changing the propagation path of the carbon dioxide laser emitted from the beam shaper through a scanning galvanometer so that the carbon dioxide laser emitted from the scanning galvanometer moves along the preset cutting area of the glass substrate.
6. The method for breaking semiconductor chips as claimed in claim 5, wherein after the step S23, the step S20 further comprises:
s24, condensing the carbon dioxide laser emitted from the scanning galvanometer through a condensing mirror;
and S25, heating the preset cutting area of the glass substrate by using the carbon dioxide laser collected by the collecting mirror to form a plurality of chip particles with preset sizes.
7. The method for breaking semiconductor chips as claimed in claim 1, wherein after the step S20, the method for breaking semiconductor chips further comprises:
and S50, stretching the carrier film to enlarge the distance between the split chip particles.
8. The splitting device of the semiconductor chip is characterized in that the semiconductor chip comprises a glass substrate, a plurality of chips arranged on the glass substrate and a bearing film covering the surface of the glass substrate, wherein the glass substrate is provided with a preset cutting area; the splitting device of the semiconductor chip comprises:
the first laser cutting assembly is used for generating first laser and moving the first laser along the preset cutting area of the glass substrate to cut the preset cutting area of the glass substrate so as to form a plurality of holes on the preset cutting area of the glass substrate;
and the second laser cutting assembly is used for generating second laser and moving the second laser along the preset cutting area of the glass substrate to heat the preset cutting area of the glass substrate so as to form a plurality of chip particles with preset sizes.
9. The device for breaking semiconductor chips as claimed in claim 8, wherein the power of the first laser is greater than a first predetermined power.
10. The device for breaking semiconductor chips as claimed in claim 8, wherein the second laser is a carbon dioxide laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110581531.4A CN113371989A (en) | 2021-05-26 | 2021-05-26 | Splitting method and splitting device for semiconductor chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110581531.4A CN113371989A (en) | 2021-05-26 | 2021-05-26 | Splitting method and splitting device for semiconductor chip |
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| CN111777322A (en) * | 2020-07-27 | 2020-10-16 | 苏州新吴光电科技有限公司 | Glass cover plate and processing method thereof |
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