CN113343520B - Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor - Google Patents

Abstract

Embodiments of the present application provide a method, system, device, and storage medium for improving the temperature stability of a silicon-based resonant sensor, which relate to the technical field of microelectromechanical sensors. The crystal orientation angle of the resonant sensor is increased in the angle optimization step size to search. For each search, the modal simulation of the resonant sensor is performed at multiple test temperatures, and the temperature change of the resonant frequency at the crystal orientation angle is obtained. After the search is completed, the resonant frequency temperature change is aggregated to find the optimal crystal orientation angle. The present application can efficiently and conveniently determine the processing crystal orientation that minimizes the frequency temperature drift of the silicon resonant sensor, thereby improving the temperature stability of the sensor.

Description

Method, system, device and storage medium for improving temperature stability of silicon-based resonant sensor

technical field

Embodiments of the present application relate to the technical field of microelectromechanical sensors, and in particular, to a method, system, device, and storage medium for improving temperature stability of a silicon-based resonant sensor.

Background technique

Micro-resonant sensors are resonant devices with feature sizes in the micron order processed by micro-nano technology, including micro-resonant gyroscopes, micro-resonance accelerometers, micro-resonance magnetometers, micro-resonance pressure gauges, and other important sensors. Silicon-based resonant sensors have gradually become the mainstream technology and are widely used in various fields due to their advantages of small size, low cost, suitable for batch processing, and easy integration with CMOS circuits.

The main structure of the silicon-based resonant sensor is a silicon micro-resonator. The working principle is usually to convert a physical or chemical quantity to be measured into the change of the resonant frequency of the resonator itself through the change of stiffness or mass, and then to detect the change of the resonant frequency. Variation gets the size to be measured. Therefore, the frequency stability of the resonator, especially in the temperature-changing environment, directly affects the performance index of the sensor.

In order to improve the temperature performance of the silicon-based resonant sensor, the sensor is usually designed as a dual-resonator differential mode, and the frequency temperature drift caused by a single resonator is reduced by differential. However, due to processing errors, the parameters of the two resonators are not exactly the same, which will still bring temperature drift.

SUMMARY OF THE INVENTION

Embodiments of the present application provide a method, system, device, and storage medium for improving the temperature stability of a silicon-based resonant sensor, aiming to solve the problem of poor frequency stability of the existing silicon-based resonant sensor in a temperature-changing environment.

A first aspect of an embodiment of the present application provides a method for improving temperature stability of a silicon-based resonant sensor, where the silicon-based resonant sensor includes at least one resonant sensor, and the method includes:

A search step is performed, and the search step specifically includes:

Increase the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step size;

judging whether the crystal orientation angle of the resonant sensor is greater than the preset threshold;

If the crystallographic angle of the resonant sensor is not greater than the preset threshold, align the vibration axis of the resonant sensor with the crystallographic angle;

Perform modal simulation on the resonant sensor at multiple test temperatures, summarize the modal simulation results at each test temperature point, and obtain the temperature change of the resonant frequency at the crystal orientation angle;

Repeatedly performing the searching step until the crystal orientation angle of the resonant sensor is less than a preset threshold;

The crystallographic orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency is selected as the optimal crystallographic orientation angle, and the resonant sensor is processed according to the optimal crystallographic orientation angle.

Optionally, the silicon-based resonant sensor adopts a silicon wafer of {100} specification or {110} specification.

Optionally, the method further includes:

The crystal orientation along the cutting edge of the silicon wafer defines the initial crystal orientation angle, and the initial crystal orientation angle is 0°.

Optionally, the method further includes:

When the silicon-based resonant sensor adopts a silicon wafer of {100} specification, the preset threshold is 45°;

When the silicon-based resonant sensor adopts a silicon wafer of {110} specification, the preset threshold is 90°.

Optionally, obtaining the temperature variation of the resonant frequency at the crystallographic angle, including:

Traverse the modal simulation results of each test temperature point, and obtain the maximum and minimum values of the resonant frequency of the resonant sensor at the crystal orientation angle;

The difference between the maximum value and the minimum value of the resonance frequency is calculated, and the difference is used as the temperature change amount of the resonance frequency.

Optionally, including a plurality of resonant sensors, the method further includes:

When the optimal crystal orientation angle corresponding to any one of the multiple silicon-based resonant sensors is determined, the working vibration mode of the multiple silicon-based resonant sensors is determined according to the optimal crystal orientation angle state.

Optionally, the determining the working vibration modes of the multiple silicon-based resonant sensors according to the target optimal crystal orientation angle includes:

processing the working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity indicates that the plurality of resonant sensors share the same optimal crystal orientation angle;

Or, the working vibration modes of the plurality of resonant sensors are processed to be orthogonal, wherein the orthogonality indicates that some of the resonant sensors in the plurality of resonant sensors share the same target optimal crystallographic angle, The remaining resonant sensors are orthogonal to the partially resonant sensor.

A second aspect of an embodiment of the present application provides a system for improving temperature stability of a silicon-based resonant sensor, the silicon-based resonant sensor includes at least one resonant sensor, and the system includes:

A search module, configured to perform a search step, the search step specifically includes:

Increase the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step size;

judging whether the crystal orientation angle of the resonant sensor is greater than the preset threshold;

If the crystallographic angle of the resonant sensor is not greater than the preset threshold, align the vibration axis of the resonant sensor with the crystallographic angle;

Perform modal simulation on the resonant sensor at multiple test temperatures, summarize the modal simulation results at each test temperature point, and obtain the temperature change of the resonant frequency at the crystal orientation angle;

Repeatedly performing the searching step until the crystal orientation angle of the resonant sensor is less than a preset threshold;

The processing module is used for selecting the crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as the optimal crystal orientation angle, and processing the resonant sensor according to the optimal crystal orientation angle.

A third aspect of the embodiments of the present application provides a readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, implements the steps in the method described in the first aspect of the present application.

A fourth aspect of the embodiments of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and running on the processor, when the processor executes the computer program, the first computer program of the present application is implemented. The steps of the method of the aspect.

Using the method for improving the temperature stability of a silicon-based resonant sensor provided by the present application, the crystal orientation angle of the resonant sensor is increased according to the crystal orientation angle optimization step, and for each search, the resonant sensor is searched at multiple test temperatures. The sensor performs modal simulation to obtain the temperature change of the resonant frequency at the crystal orientation angle. After the search is completed, the temperature change of the resonant frequency is aggregated to find the optimal crystal orientation angle. The present application can efficiently and conveniently determine the processing crystal orientation that minimizes the frequency temperature drift of the silicon resonant sensor, thereby improving the temperature stability of the sensor.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments of the present application. Obviously, the drawings in the following description are only some embodiments of the present application. , for those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative labor.

1 is a flowchart of a method for improving temperature stability of a silicon-based resonant sensor proposed by an embodiment of the present application;

FIG. 2 is a schematic diagram of determining the optimal crystal orientation angle of a silicon-based resonant sensor proposed by an embodiment of the present application;

FIG. 3 is a schematic diagram of a device for improving temperature stability of a silicon-based resonant sensor according to an embodiment of the present application.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

Aiming at the problem of frequency temperature drift of silicon-based resonant sensors, the industry has proposed several methods to compensate for its temperature drift, which can be mainly divided into two categories. One is to use a temperature sensor to measure temperature, and then perform mathematical fitting compensation on the temperature measurement output and the sensor output. This method is essentially a post-compensation method, and its compensation accuracy depends on the repeatability of sensor temperature drift. In addition, due to differences such as temperature gradients between the external temperature sensor and the resonant sensor, the compensation accuracy will be reduced. Another major category is temperature control compensation, that is, through an external temperature control device, through a preset temperature control point, the ambient temperature where the sensor is located can be adjusted in real time to reduce temperature drift. The disadvantage of this method is that the sensor generally needs to work in a high temperature state, which will increase the thermal noise of the sensor, increase the circuit complexity and system cost. The above two types of temperature compensation methods commonly used at present only reduce the temperature drift from the aspects of data processing and temperature control, and neither can fundamentally suppress the temperature drift of the frequency output of the resonant sensor.

The inventors observed that the relationship between the resonant frequency of the micro-resonant sensor and the temperature can be approximately described as the following formula.

f(T)=f ₀ [1+TCF ₁ (TT ₀ )+TCF ₂ (TT ₀ ) ² ] (1)

Among them, f ₀ is the resonant frequency at the reference temperature point T ₀ , and TCF ₁ and TCF ₂ are the first-order and second-order coefficients of the frequency-temperature variation, respectively. The temperature coefficient is usually determined by the temperature coefficient of variation of the elastic modulus of the silicon material and the thermal expansion coefficient. The temperature coefficient of the elastic modulus is related to the crystallographic orientation. The inventor believes that the first-order and second-order coefficients can be reduced by optimizing the crystallographic direction, thereby reducing the temperature variation of the resonant frequency and improving the output temperature stability of the sensor. For example, the vibration axis of the micro-resonant sensor is along the silicon wafer. When the <110> crystal orientation is processed, the first-order coefficient plays a leading role, and the relationship between frequency and temperature is approximately linear.

Referring to FIG. 1 , FIG. 1 is a flowchart of a method for improving temperature stability of a silicon-based resonant sensor according to an embodiment of the present application. As shown in Figure 1, the method includes the following steps:

Step S110, performing a search step, the search step specifically includes: increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step size; judging whether the crystal orientation angle of the resonant sensor is greater than the preset threshold; If the crystallographic orientation angle of the resonant sensor is not greater than the preset threshold, align the vibration axis of the resonant sensor with the crystallographic orientation angle; model the resonant sensor at multiple test temperatures state simulation, summarize the modal simulation results of each test temperature point, and obtain the temperature variation of the resonant frequency at the crystal orientation angle; repeat the search step until the crystal orientation angle of the resonant sensor is smaller than the preset threshold.

The method of the embodiment of the present application is applied to a silicon-based resonant sensor, the silicon-based resonant sensor should include at least one micro-resonant sensor, and the micro-resonant sensor is generally performed on a silicon wafer by anisotropic etching or bulk silicon deep etching The silicon-based resonant sensor can sense external changes such as stiffness change or mass change through the micro-resonance sensitive structure provided. Preferably, the silicon-based resonant sensor adopts a silicon wafer of {100} specification or {110} specification. The method of the present application is applicable to silicon-based resonant sensors based on {100} specification or {110} specification silicon wafers, and the above 100 and 110 are the classification of silicon wafers according to the crystal orientation.

The purpose of this application is to find the optimal crystal orientation angle of the resonant sensor. In order to achieve this purpose, this application implements a step-by-step search strategy, setting the starting point of the crystal orientation angle search, and proceeding from the starting point according to a certain step size Search to find the optimal crystal orientation angle. The step size may be set in advance according to your own needs, for example, set to 1°. The step size should be set according to actual needs. It should be noted that the step size cannot be set too large or too small. If the step size is set too large, it is easy to miss the optimal crystal orientation angle. If the step size is set too small, the search time will be too long. long.

In an embodiment of the present application, the method further includes:

The crystal orientation along the cutting edge of the silicon wafer defines the initial crystal orientation angle, and the initial crystal orientation angle is 0°.

For the setting of the starting point, in the embodiment of the present application, the crystallographic direction of the cut edge of the silicon wafer is used as the starting crystallographic orientation angle of the resonant sensor, as shown in FIG. 2 , the silicon wafer 1 in FIG. , the crystallographic direction 5 of the cut edge 4 is the <110> crystallographic orientation, and the crystallographic orientation along the direction 5 is defined as the initial crystallographic orientation angle, and the value is 0°. According to the initial crystallographic orientation angle, the resonant sensor 2 is obtained. The working modal vibration axis of the sensor 2 coincides with the 0° crystallographic direction. The vibration axis of the resonant sensor is the vibration direction in the normal working mode of the sensor.

The initial crystal orientation angle set by the resonant sensor is increased according to the crystal orientation angle optimization step size to obtain a new crystal orientation angle. In actual implementation, the resonant sensor 2 can be rotated on the silicon wafer 1 as a whole as shown in Figure 2. When the crystal orientation angle is increased, the resonant sensor 2 becomes as shown in the resonant sensor 3 after increasing the crystal orientation angle, so that the working mode vibration axis of the resonant sensor 3 coincides with the crystal orientation 6, and its crystal orientation angle is 7.

It is judged whether the new crystal orientation angle is greater than the preset threshold, and if it is greater than the preset threshold, the search should be exited, and if the crystal orientation angle is not greater than the preset threshold, modal simulation is performed on the current crystal orientation angle. In one embodiment of the present application,

When the silicon-based resonant sensor adopts a silicon wafer of {100} specification, the preset threshold is 45°;

When the silicon-based resonant sensor adopts a silicon wafer of {110} specification, the preset threshold is 90°.

The applicant found that when the search range exceeds a certain threshold, as shown in Figure 2, when 100 silicon wafers exceed 45°, the effect of the crystal orientation angle on the frequency-temperature variation relationship is repeated with the effect when the range is less than 45°. Therefore, when the search range is When it exceeds 45°, it is an invalid search, and no new optimal crystal orientation angle will appear. For example, as shown in Figure 2, when the crystal orientation angle is 7 and 45°, the search is stopped, and the crystal orientation angle is <100> when the crystal orientation angle is 45°.

The elastic modulus value is determined by the crystallographic orientation and temperature. After obtaining the new crystal orientation angle, it is necessary to test the frequency-temperature variation relationship under this crystal orientation angle. For the relationship between the resonant frequency and temperature at the current crystal orientation angle, several temperature points can be selected according to the operating temperature range of the silicon resonant sensor, and the elastic modulus value and thermal expansion coefficient of each temperature point can be set. get. For temperature points, you can select them according to actual needs. For example, if you need detailed change data, you can set the temperature points to be denser. Modal simulation can be performed in finite element simulation software such as Ansys or Comsol. According to the specific requirements of the simulation software, the elastic modulus values and Thermal expansion coefficient. Align the vibration axis of the resonant sensor with the new crystal orientation angle, perform modal simulation at each selected temperature point, and traverse the required temperature range to obtain all resonant frequency values within the full temperature range.

Summarize the modal simulation results of each test temperature point to obtain the temperature variation of the resonant frequency at this crystallographic angle. In an embodiment of the present application, obtaining the temperature variation of the resonant frequency at the crystal orientation angle includes:

Traverse the modal simulation results of each test temperature point, and obtain the maximum and minimum values of the resonant frequency of the resonant sensor at the crystal orientation angle;

The difference between the maximum value and the minimum value of the resonance frequency is calculated, and the difference is used as the temperature change amount of the resonance frequency.

For the modal simulation results at a crystal orientation angle, traverse the modal simulation results of each test temperature point, find the maximum and minimum values of the resonant frequency of the resonant sensor in the entire temperature test range, and calculate the difference between the maximum and minimum values. The amount of temperature change that is the resonance frequency of the crystal orientation angle.

Step S120: Select the crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as the optimum crystal orientation angle, and process the resonant sensor according to the optimum crystal orientation angle.

The crystal orientation angle with the smallest change of the resonant frequency is the optimal crystal orientation angle, and the optimal crystal orientation angle is selected as the crystal orientation angle for the resonant sensor processing. smallest resonator.

The present application optimizes the processing crystal orientation of the silicon-based micro-resonant sensor. By processing the obtained optimal crystal orientation angle, the temperature coefficient of the Young's modulus of the silicon material can be reduced, thereby reducing the frequency temperature of the resonant device. coefficient, which improves the temperature stability of the sensor.

In an embodiment of the present application, including a plurality of resonant sensors, the method further includes:

When the optimal crystal orientation angle corresponding to any one of the multiple silicon-based resonant sensors is determined, the working vibration mode of the multiple silicon-based resonant sensors is determined according to the optimal crystal orientation angle state.

Preferably, the determining of the working vibration modes of the plurality of silicon-based resonant sensors according to the target optimal crystal orientation angle includes:

processing the working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity indicates that the plurality of resonant sensors share the same optimal crystal orientation angle;

Or, the working vibration modes of the plurality of resonant sensors are processed to be orthogonal, wherein the orthogonality indicates that some of the resonant sensors in the plurality of resonant sensors share the same target optimal crystallographic angle, The remaining resonant sensors are orthogonal to the partially resonant sensor.

When the silicon resonant sensor includes more than one resonator structure, the working vibration modes of the included resonators are axially collinear or orthogonal. As shown in Figure 2, assuming that there are resonant sensors 2 and 3, the optimal crystal orientation angle found is 7; when the machining method is axially collinear, then all resonant sensors (2 and 3) are It is processed as the crystal orientation angle 7 and the vibration axis 6; when the processing method is orthogonal, some resonant sensors (such as 3) are processed into the crystal orientation angle of 7 and the vibration axis of 6. For the rest of the resonant sensors (eg sensor 2) the vibration axis should be set to be orthogonal to the 6 vertical.

Using the method for improving the temperature stability of a silicon-based resonant sensor provided by the present application, the crystal orientation angle of the resonant sensor is increased according to the crystal orientation angle optimization step, and for each search, the resonant sensor is searched at multiple test temperatures. The sensor performs modal simulation to obtain the temperature change of the resonant frequency at the crystal orientation angle. After the search is completed, the temperature change of the resonant frequency is aggregated to find the optimal crystal orientation angle. The present application can efficiently and conveniently determine the processing crystal orientation that minimizes the frequency temperature drift of the silicon resonant sensor, thereby improving the temperature stability of the sensor.

Based on the same inventive concept, an embodiment of the present application provides a system for improving temperature stability of a silicon-based resonant sensor. Referring to FIG. 3 , FIG. 3 is a schematic diagram of a system for improving temperature stability of a silicon-based resonant sensor according to an embodiment of the present application. As shown in Figure 3, the system includes:

The search module 310 is configured to perform a search step, and the search step specifically includes:

Increase the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step size;

judging whether the crystal orientation angle of the resonant sensor is greater than the preset threshold;

If the crystallographic angle of the resonant sensor is not greater than the preset threshold, align the vibration axis of the resonant sensor with the crystallographic angle;

Perform modal simulation on the resonant sensor at multiple test temperatures, summarize the modal simulation results at each test temperature point, and obtain the temperature change of the resonant frequency at the crystal orientation angle;

Repeatedly performing the searching step until the crystal orientation angle of the resonant sensor is less than a preset threshold;

The processing module 320 is configured to select the crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as the optimum crystal orientation angle, and process the resonant sensor according to the optimum crystal orientation angle.

Based on the same inventive concept, another embodiment of the present application provides a readable storage medium on which a computer program is stored, and when the program is executed by a processor, implements the silicon-based resonant sensor according to any of the above embodiments of the present application Steps in a method for improving temperature stability.

Based on the same inventive concept, another embodiment of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and running on the processor, the processor implements any of the above-mentioned applications when executed The steps in the method for improving the temperature stability of a silicon-based resonant sensor according to the embodiment.

As for the apparatus embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and reference may be made to the partial description of the method embodiment for related parts.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments may be referred to each other.

Those skilled in the art should understand that the embodiments of the embodiments of the present application may be provided as methods, apparatuses, or computer program products. Accordingly, the embodiments of the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.

The embodiments of the present application are described with reference to the flowcharts and/or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present application. It will be understood that each flow and/or block in the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to the processor of a general purpose computer, special purpose computer, embedded processor or other programmable data processing terminal equipment to produce a machine that causes the instructions to be executed by the processor of the computer or other programmable data processing terminal equipment Means are created for implementing the functions specified in the flow or flows of the flowcharts and/or the blocks or blocks of the block diagrams.

These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing terminal equipment to operate in a particular manner, such that the instructions stored in the computer readable memory result in an article of manufacture comprising instruction means, the The instruction means implement the functions specified in the flow or flow of the flowcharts and/or the block or blocks of the block diagrams.

These computer program instructions can also be loaded on a computer or other programmable data processing terminal equipment, so that a series of operational steps are performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby executing on the computer or other programmable terminal equipment The instructions executed on the above provide steps for implementing the functions specified in the flowchart or blocks and/or the block or blocks of the block diagrams.

Although the preferred embodiments of the embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once the basic inventive concepts are known. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications that fall within the scope of the embodiments of the present application.

Finally, it should also be noted that in this document, relational terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply these entities or that there is any such actual relationship or sequence between operations. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion such that a process, method, article or terminal device that includes a list of elements includes not only those elements, but also a non-exclusive list of elements. other elements, or also include elements inherent to such a process, method, article or terminal equipment. Without further limitation, an element defined by the phrase "comprises a..." does not preclude the presence of additional identical elements in the process, method, article or terminal device comprising said element.

The above provides a detailed introduction to the temperature stability improvement method, system, device and storage medium of a silicon-based resonant sensor provided by the present application. Specific examples are used in this paper to illustrate the principles and implementations of the present application. The above The description of the embodiment is only used to help understand the method of the present application and its core idea; meanwhile, for those of ordinary skill in the art, according to the idea of the present application, there will be changes in the specific embodiment and the scope of application. As mentioned above, the contents of this specification should not be construed as limiting the present application.

Claims (8)

1. A method for improving the temperature stability of a silicon-based resonant sensor, wherein the silicon-based resonant sensor comprises at least one resonant sensor, and the method comprises the following steps:

executing a search step, wherein the search step specifically comprises:

increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;

judging whether the crystal orientation angle of the resonant sensor is larger than a preset threshold value or not;

if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;

performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;

repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;

selecting a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle, and processing the resonant sensor according to the optimal crystal orientation angle;

when the silicon-based resonant sensor comprises a plurality of resonant sensors, the method further comprises:

when the optimal crystal orientation angle corresponding to any one of the resonant sensors is determined, determining the working vibration modes of the resonant sensors according to the optimal crystal orientation angle;

wherein, the determining the working vibration mode of the resonant sensors according to the optimal crystal orientation angle comprises:

processing working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity represents that the plurality of resonant sensors share the same optimal crystal orientation angle;

or processing the working vibration modes of the plurality of resonant sensors into orthogonality, wherein the orthogonality represents that part of the resonant sensors in the plurality of resonant sensors share the same optimal crystal orientation angle, and the rest of the resonant sensors are orthogonal to the part of the resonant sensors.

2. The method of claim 1, wherein the silicon-based resonant sensor is a silicon wafer with a {100} specification or a {110} specification.

3. The method of claim 2, further comprising:

and defining an initial crystal orientation angle along the crystal orientation of the silicon slice trimming edge along the direction, wherein the initial crystal orientation angle is 0 degree.

4. The method of claim 2, further comprising:

when the silicon-based resonant sensor adopts a silicon wafer with a specification of {100}, the preset threshold value is 45 degrees;

when the silicon-based resonant sensor adopts a silicon wafer with a {110} specification, the preset threshold value is 90 degrees.

5. The method of claim 1, wherein obtaining the temperature variation of the resonant frequency at the crystal orientation angle comprises:

traversing the modal simulation result of each test temperature point, and acquiring the maximum value and the minimum value of the resonant frequency of the resonant sensor under the crystal orientation angle;

and calculating the difference between the maximum value and the minimum value of the resonance frequency, and taking the difference as the temperature variation of the resonance frequency.

6. A silicon-based resonant sensor temperature stability enhancement system, the silicon-based resonant sensor comprising at least one resonant sensor, the system comprising:

a search module configured to perform a search step, the search step specifically including:

increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;

judging whether the crystal orientation angle of the resonant sensor is larger than a preset threshold value or not;

if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;

performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;

repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;

the processing module is used for selecting a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle and processing the resonant sensor according to the optimal crystal orientation angle;

when the silicon-based resonant sensor comprises a plurality of resonant sensors, the system is used for determining the working vibration modes of the resonant sensors according to the optimal crystal orientation angle when the optimal crystal orientation angle corresponding to any one of the resonant sensors is determined;

wherein, the determining the working vibration mode of the resonant sensors according to the optimal crystal orientation angle comprises:

processing working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity represents that the plurality of resonant sensors share the same optimal crystal orientation angle;

or processing the working vibration modes of the plurality of resonant sensors into orthogonality, wherein the orthogonality represents that part of the resonant sensors in the plurality of resonant sensors share the same optimal crystal orientation angle, and the rest of the resonant sensors are orthogonal to the part of the resonant sensors.

7. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 5.

8. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any of claims 1 to 5 when executing the computer program.

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