CN113343520A - Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor - Google Patents
Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor Download PDFInfo
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Abstract
本申请实施例提供一种硅基谐振式传感器温度稳定性提升方法、系统、设备及存储介质，涉及微机电传感器技术领域，采用本申请提供的硅基谐振式传感器温度稳定性提升方法，按照晶向角优化步长增加谐振式传感器的晶向角进行搜索，对于每一次搜索，在多个测试温度下对所述谐振式传感器进行模态仿真，获取在该晶向角下的谐振频率温度变化量，搜索完成后汇总谐振频率温度变化量找到最优晶向角。本申请可以高效、便捷地确定使硅谐振式传感器频率温度漂移最小的加工晶向，提升传感器的温度稳定性。
Embodiments of the present application provide a method, system, device, and storage medium for improving the temperature stability of a silicon-based resonant sensor, which relate to the technical field of microelectromechanical sensors. Increase the crystal orientation angle of the resonant sensor to search for the angle optimization step size. For each search, perform modal simulation on the resonant sensor at multiple test temperatures to obtain the temperature change of the resonant frequency at the crystal orientation angle. After the search is completed, the resonant frequency temperature change is aggregated to find the optimal crystal orientation angle. The present application can efficiently and conveniently determine the processing crystal orientation that minimizes the frequency temperature drift of the silicon resonant sensor, thereby improving the temperature stability of the sensor.
Description
Technical Field
The embodiment of the application relates to the technical field of micro-electromechanical sensors, in particular to a method, a system, equipment and a storage medium for improving the temperature stability of a silicon-based resonant sensor.
Background
The micro-resonance type sensor is a resonance type device with the characteristic dimension in the micron order processed by a micro-nano process, and comprises a micro-resonance type gyroscope, a micro-resonance accelerometer, a micro-resonance magnetometer, a micro-resonance pressure meter, and other important sensors. Resonant transducers based on silicon have become the mainstream technology and are widely used in various fields due to their advantages of small size, low cost, suitability for batch processing, and easy integration with CMOS circuits.
The main structure of the silicon-based resonant sensor is a silicon micro-resonator, and the working principle is that a certain physical quantity or chemical quantity to be measured is converted into the change of the resonant frequency of the resonator through the change of rigidity or mass, and then the change of the resonant frequency is detected to obtain the size to be measured. Therefore, the frequency stability of the resonator, especially in a temperature-dependent environment, directly affects the performance index of the sensor.
In order to improve the temperature performance of the silicon-based resonant sensor, the sensor is usually designed into a dual-resonator differential mode, and the frequency temperature drift caused by a single resonator is reduced through difference. However, due to manufacturing errors, the parameters of the two resonators are not completely consistent, and temperature drift is still caused.
Disclosure of Invention
The embodiment of the application provides a method, a system, equipment and a storage medium for improving the temperature stability of a silicon-based resonant sensor, and aims to solve the problem of poor frequency stability of the existing silicon-based resonant sensor in a temperature change environment.
A first aspect of an embodiment of the present application provides a method for improving temperature stability of a silicon-based resonant sensor, where the silicon-based resonant sensor includes at least one resonant sensor, and the method includes:
executing a search step, wherein the search step specifically comprises:
increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;
judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not;
if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;
performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;
repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;
and selecting a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle, and processing the resonant sensor according to the optimal crystal orientation angle.
Optionally, the silicon-based resonant sensor adopts a silicon wafer with a specification of 100 or 110.
Optionally, the method further comprises:
and defining an initial crystal orientation angle along the crystal orientation of the silicon slice trimming edge along the direction, wherein the initial crystal orientation angle is 0 degree.
Optionally, the method further comprises:
when the silicon-based resonant sensor adopts a silicon wafer with a specification of {100}, the preset threshold value is 45 degrees;
when the silicon-based resonant sensor adopts a silicon wafer with a {110} specification, the preset threshold value is 90 degrees.
Optionally, acquiring a temperature variation of the resonant frequency at the crystal orientation angle includes:
traversing the modal simulation result of each test temperature point, and acquiring the maximum value and the minimum value of the resonant frequency of the resonant sensor under the crystal orientation angle;
and calculating the difference between the maximum value and the minimum value of the resonance frequency, and taking the difference as the temperature variation of the resonance frequency.
Optionally, a plurality of resonant sensors is included, the method further comprising:
and when the optimal crystal orientation angle corresponding to any one silicon-based resonant sensor in the silicon-based resonant sensors is determined, determining the working vibration modes of the silicon-based resonant sensors according to the optimal crystal orientation angle.
Optionally, the determining the working vibration modes of the plurality of silicon-based resonant sensors according to the target optimal crystal orientation angle includes:
processing working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity represents that the plurality of resonant sensors share the same optimal crystal orientation angle;
or processing the working vibration modes of the plurality of resonant sensors into orthogonality, wherein the orthogonality represents that part of the resonant sensors in the plurality of resonant sensors share the same target optimal crystal orientation angle, and the rest of the resonant sensors are orthogonal to the part of the resonant sensors.
A second aspect of the embodiments of the present application provides a system for improving temperature stability of a silicon-based resonant sensor, where the silicon-based resonant sensor includes at least one resonant sensor, and the system includes:
a search module configured to perform a search step, the search step specifically including:
increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;
judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not;
if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;
performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;
repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;
and the processing module is used for selecting the crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as the optimal crystal orientation angle and processing the resonant sensor according to the optimal crystal orientation angle.
A third aspect of embodiments of the present application provides a readable storage medium, on which a computer program is stored, which, when executed by a processor, implements the steps in the method according to the first aspect of the present application.
A fourth aspect of the embodiments of the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor executes the computer program to implement the steps of the method according to the first aspect of the present application.
By adopting the method for improving the temperature stability of the silicon-based resonant sensor, the crystal orientation angle of the resonant sensor is increased according to the crystal orientation angle optimization step length for searching, for each searching, modal simulation is carried out on the resonant sensor at a plurality of test temperatures, the resonant frequency temperature variation under the crystal orientation angle is obtained, and the resonant frequency temperature variation is gathered after the searching is completed to find the optimal crystal orientation angle. The method and the device can efficiently and conveniently determine the processing crystal orientation which enables the frequency temperature drift of the silicon resonant sensor to be minimum, and improve the temperature stability of the sensor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a flowchart of a method for improving temperature stability of a silicon-based resonant sensor according to an embodiment of the present application;
fig. 2 is a schematic diagram of determining an optimal crystal orientation angle of a silicon-based resonant sensor according to an embodiment of the present application;
fig. 3 is a schematic diagram of a temperature stability improving apparatus for a silicon-based resonant sensor according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In order to solve the problem of frequency and temperature drift of the silicon-based resonant sensor, several methods have been proposed to compensate the temperature drift, which can be mainly classified into two categories. One is to measure the temperature with a temperature sensor and then mathematically fit and compensate the measured temperature output and the sensor output. The method essentially belongs to a post-compensation method, and the compensation precision of the method depends on the repeatability of the temperature drift of the sensor. In addition, the compensation accuracy may be degraded due to a difference in temperature gradient between the additional temperature sensor and the resonance sensor. The other category is temperature control compensation, namely, the temperature of the environment where the sensor is located is adjusted in real time through a preset temperature control point by an external temperature control device so as to reduce temperature drift. The disadvantage of this method is that the sensor is usually operated at a high temperature, which increases the thermal noise of the sensor, increases the circuit complexity and the system cost. The two types of currently-used temperature compensation methods only reduce the temperature drift in the aspects of data processing and temperature control, and do not fundamentally inhibit the temperature drift amount of the frequency output of the resonant sensor.
The inventor observes that the change of the resonance frequency of the micro-resonance type sensor along with the temperature can be approximately described as the following formula.
f(T)＝f0[1+TCF1(T-T0)+TCF2(T-T0)2] (1)
Wherein f is0Is a reference temperature point T0Resonant frequency of lower, TCF1And TCF2First and second order coefficients of frequency temperature change, respectively. The temperature coefficient is generally determined by the temperature coefficient of variation of the elastic modulus of the silicon material and the coefficient of thermal expansion. And the temperature coefficient of the elastic modulus is related to the crystal orientation. The inventor considers that the temperature variation of the resonant frequency can be reduced and the output temperature stability of the sensor can be improved by optimizing the crystal orientation direction to reduce the first-order and second-order coefficients, for example, the vibration axis of a micro-resonance type sensor is along the silicon chip<110>When the crystal orientation is processed, the first-order coefficient plays a leading role, and the change relation of the frequency and the temperature is approximately linear.
Referring to fig. 1, fig. 1 is a flowchart of a method for improving temperature stability of a silicon-based resonant sensor according to an embodiment of the present application. As shown in fig. 1, the method comprises the steps of:
step S110, executing a searching step, wherein the searching step specifically comprises the following steps: increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length; judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not; if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle; performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle; and repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value.
The method provided by the embodiment of the application is applied to the silicon-based resonant sensor, the silicon-based resonant sensor should comprise at least one micro-resonant sensor, the micro-resonant sensor is generally processed on a silicon chip in an anisotropic corrosion mode or a silicon deep etching mode and the like, and the silicon-based resonant sensor can sense external changes such as rigidity change or mass change through a micro-resonant sensitive structure. Preferably, the silicon-based resonant sensor adopts a silicon wafer with a {100} specification or a {110} specification. The method is suitable for silicon-based resonant sensors based on silicon wafers with the {100} specification or the {110} specification, and the silicon wafers are classified according to the crystal orientation by 100 and 110.
The method aims to find the optimal crystal orientation angle of the resonant sensor, and is realized by a step-by-step search strategy, wherein a starting point of crystal orientation angle search is set, and the initial point is searched according to a certain step length to find the optimal crystal orientation angle. The step size may be set in advance according to the need, for example, 1 °. The step size should be set according to actual requirements, and it should be noted that the step size cannot be set too large or too small, if the step size is set too large, the optimal crystal orientation angle is easily missed, and if the step size is set too small, the search time is too long.
In one embodiment of the present application, the method further comprises:
and defining an initial crystal orientation angle along the crystal orientation of the silicon slice trimming edge along the direction, wherein the initial crystal orientation angle is 0 degree.
For the setting of the starting point, in the embodiment of the present application, the crystal orientation of the cut edge of the silicon wafer is taken as the starting crystal orientation angle of the resonant sensor, as shown in fig. 2, the silicon wafer 1 in fig. 2 is a 100 silicon wafer, the crystal orientation of the cut edge 4 in the direction 5 is a <110> crystal orientation, the crystal orientation in the direction 5 is defined as the starting crystal orientation angle, the value is 0 °, the resonant sensor 2 is obtained according to the starting crystal orientation angle, and the working mode vibration axis of the resonant sensor 2 coincides with the 0 ° crystal orientation. The vibration axial direction of the resonant sensor is the vibration direction of the sensor under the normal working mode.
In actual execution, as shown in fig. 2, the crystal orientation angle can be increased on the silicon wafer 1 by integrally rotating the resonant sensor 2, and after the crystal orientation angle is increased, the resonant sensor 2 becomes the resonant sensor 3, so that the working mode vibration axis of the resonant sensor 3 coincides with the crystal orientation 6, and the crystal orientation angle is 7.
And judging whether the new crystal orientation angle is larger than the preset threshold value, if so, quitting the search, and if not, performing modal simulation on the current crystal orientation angle. In one embodiment of the present application,
when the silicon-based resonant sensor adopts a silicon wafer with a specification of {100}, the preset threshold value is 45 degrees;
when the silicon-based resonant sensor adopts a silicon wafer with a {110} specification, the preset threshold value is 90 degrees.
The applicant found that when the search range exceeds a certain threshold, such as the 100 silicon wafer shown in fig. 2 exceeds 45 °, the influence of the crystal orientation angle on the frequency temperature change relationship is repeated with the influence in the range less than 45 °, and therefore, when the search range exceeds 45 °, the search is invalid and a new optimum crystal orientation angle does not occur. For example, as shown in fig. 2, when the crystal orientation angle is 7 ° and 45 °, the search is stopped, and when the crystal orientation angle is 45 °, the crystal orientation is <100> crystal orientation.
The elastic modulus value is determined by the crystal orientation and the temperature. After obtaining a new crystal orientation angle, the frequency temperature variation relationship at this crystal orientation angle needs to be tested. For the change relation of the resonant frequency under the current crystal orientation angle along with the temperature, a plurality of temperature points can be selected according to the working temperature range of the silicon resonant sensor, the elastic modulus value and the thermal expansion coefficient of each temperature point are set, and the change relation is obtained through modal simulation. The temperature points can be selected according to actual needs, for example, if detailed change data is needed, the temperature points can be set to be denser. The modal simulation may be performed in finite element simulation software such as Ansys or Comsol, in which the elastic modulus value and the thermal expansion coefficient of the sensor at different temperature points at each crystal orientation angle are set according to the specific requirements of the simulation software. Aligning the vibration axial direction of the resonant sensor with the new crystal orientation angle, performing modal simulation at each selected temperature point, traversing the required temperature range, and obtaining all resonant frequency values in the full temperature range.
And summarizing the modal simulation result of each test temperature point, and acquiring the temperature variation of the resonant frequency under the crystal orientation angle. In one embodiment of the present application, obtaining the temperature variation of the resonant frequency at the crystal orientation angle includes:
traversing the modal simulation result of each test temperature point, and acquiring the maximum value and the minimum value of the resonant frequency of the resonant sensor under the crystal orientation angle;
and calculating the difference between the maximum value and the minimum value of the resonance frequency, and taking the difference as the temperature variation of the resonance frequency.
Traversing the modal simulation result of each test temperature point for the modal simulation result under one crystal orientation angle, finding the maximum value and the minimum value of the resonant frequency of the resonant sensor in the whole temperature test range, and taking the difference between the maximum value and the minimum value as the temperature variation of the resonant frequency of the crystal orientation angle.
And S120, selecting a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle, and processing the resonant sensor according to the optimal crystal orientation angle.
And the crystal orientation angle with the minimum variation of the resonant frequency is the optimal crystal orientation angle, the optimal crystal orientation angle is selected as the crystal orientation angle processed by the resonant sensor, and the resonant sensor is processed according to the optimal crystal orientation angle, so that the resonator with the minimum temperature drift can be obtained.
The method optimizes the processing crystal orientation of the silicon-based micro-resonant sensor, processes the silicon-based micro-resonant sensor through the obtained optimal crystal orientation angle, can reduce the temperature coefficient of the Young modulus of the silicon material, further reduces the frequency temperature coefficient of the resonant device, and improves the temperature stability of the sensor.
In one embodiment of the present application, a plurality of resonant sensors is included, and the method further comprises:
and when the optimal crystal orientation angle corresponding to any one silicon-based resonant sensor in the silicon-based resonant sensors is determined, determining the working vibration modes of the silicon-based resonant sensors according to the optimal crystal orientation angle.
Preferably, the determining the working vibration modes of the plurality of silicon-based resonant sensors according to the target optimal crystal orientation angle includes:
processing working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity represents that the plurality of resonant sensors share the same optimal crystal orientation angle;
or processing the working vibration modes of the plurality of resonant sensors into orthogonality, wherein the orthogonality represents that part of the resonant sensors in the plurality of resonant sensors share the same target optimal crystal orientation angle, and the rest of the resonant sensors are orthogonal to the part of the resonant sensors.
When the silicon resonant sensor comprises more than one resonator structure, the working vibration modes of the resonators are axially collinear or orthogonal. As shown in fig. 2, assuming that resonant sensors 2 and 3 are provided therein, the found optimal crystal orientation angle is 7; when the processing mode is axial collinearity, all the resonant sensors (2 and 3) are processed in the crystal orientation angle 7 and the vibration axial direction 6; when the processing modes are orthogonal, part of the resonant sensors (e.g. 3) are processed to have a crystal orientation angle of 7 and a vibration axis direction of 6, and the vibration axis direction should be set to be orthogonal to 6 perpendicularly for the rest of the resonant sensors (e.g. 2).
By adopting the method for improving the temperature stability of the silicon-based resonant sensor, the crystal orientation angle of the resonant sensor is increased according to the crystal orientation angle optimization step length for searching, for each searching, modal simulation is carried out on the resonant sensor at a plurality of test temperatures, the resonant frequency temperature variation under the crystal orientation angle is obtained, and the resonant frequency temperature variation is gathered after the searching is completed to find the optimal crystal orientation angle. The method and the device can efficiently and conveniently determine the processing crystal orientation which enables the frequency temperature drift of the silicon resonant sensor to be minimum, and improve the temperature stability of the sensor.
Based on the same inventive concept, an embodiment of the present application provides a temperature stability improving system for a silicon-based resonant sensor. Referring to fig. 3, fig. 3 is a schematic diagram of a temperature stability improving system of a silicon-based resonant sensor according to an embodiment of the present application. As shown in fig. 3, the system includes:
a search module 310, configured to perform a search step, where the search step specifically includes:
increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;
judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not;
if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;
performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;
repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;
and the processing module 320 is configured to select a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle, and process the resonant sensor according to the optimal crystal orientation angle.
Based on the same inventive concept, another embodiment of the present application provides a readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements the steps in the method for improving the temperature stability of a silicon-based resonant sensor according to any of the embodiments of the present application.
Based on the same inventive concept, another embodiment of the present application provides an electronic device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the computer program, the method for improving temperature stability of a silicon-based resonant sensor according to any of the above embodiments of the present application is implemented.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
As will be appreciated by one of skill in the art, embodiments of the present application may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Embodiments of the present application are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present application have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the true scope of the embodiments of the application.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The method, the system, the equipment and the storage medium for improving the temperature stability of the silicon-based resonant sensor provided by the application are introduced in detail, a specific example is applied in the text to explain the principle and the implementation mode of the application, and the description of the embodiment is only used for helping to understand the method and the core idea of the application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A method for improving the temperature stability of a silicon-based resonant sensor, wherein the silicon-based resonant sensor comprises at least one resonant sensor, and the method comprises the following steps:
executing a search step, wherein the search step specifically comprises:
increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;
judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not;
if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;
performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;
repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;
and selecting a crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as an optimal crystal orientation angle, and processing the resonant sensor according to the optimal crystal orientation angle.
2. The method of claim 1, wherein the silicon-based resonant sensor is a silicon wafer with a {100} specification or a {110} specification.
3. The method of claim 2, further comprising:
and defining an initial crystal orientation angle along the crystal orientation of the silicon slice trimming edge along the direction, wherein the initial crystal orientation angle is 0 degree.
4. The method of claim 2, further comprising:
when the silicon-based resonant sensor adopts a silicon wafer with a specification of {100}, the preset threshold value is 45 degrees;
when the silicon-based resonant sensor adopts a silicon wafer with a {110} specification, the preset threshold value is 90 degrees.
5. The method of claim 1, wherein obtaining the temperature variation of the resonant frequency at the crystal orientation angle comprises:
traversing the modal simulation result of each test temperature point, and acquiring the maximum value and the minimum value of the resonant frequency of the resonant sensor under the crystal orientation angle;
and calculating the difference between the maximum value and the minimum value of the resonance frequency, and taking the difference as the temperature variation of the resonance frequency.
6. The method of claim 1, comprising a plurality of resonant sensors, the method further comprising:
and when the optimal crystal orientation angle corresponding to any one silicon-based resonant sensor in the silicon-based resonant sensors is determined, determining the working vibration modes of the silicon-based resonant sensors according to the optimal crystal orientation angle.
7. The method according to claim 1, wherein the determining the operational vibration modes of the plurality of silicon-based resonant sensors according to the target optimal crystal orientation angle comprises:
processing working vibration modes of the plurality of resonant sensors into axial collinearity, wherein the axial collinearity represents that the plurality of resonant sensors share the same optimal crystal orientation angle;
or processing the working vibration modes of the plurality of resonant sensors into orthogonality, wherein the orthogonality represents that part of the resonant sensors in the plurality of resonant sensors share the same target optimal crystal orientation angle, and the rest of the resonant sensors are orthogonal to the part of the resonant sensors.
8. A silicon-based resonant sensor temperature stability enhancement system, the silicon-based resonant sensor comprising at least one resonant sensor, the system comprising:
a search module configured to perform a search step, the search step specifically including:
increasing the crystal orientation angle of the resonant sensor according to the crystal orientation angle optimization step length;
judging whether the crystal orientation angle of the resonant sensor is larger than the preset threshold value or not;
if the crystal orientation angle of the resonant sensor is not larger than the preset threshold value, aligning the vibration axis of the resonant sensor with the crystal orientation angle;
performing modal simulation on the resonant sensor at a plurality of test temperatures, summarizing a modal simulation result of each test temperature point, and acquiring a resonant frequency temperature variation under the crystal orientation angle;
repeatedly executing the searching step until the crystal orientation angle of the resonant sensor is smaller than a preset threshold value;
and the processing module is used for selecting the crystal orientation angle corresponding to the minimum value of the temperature variation of the resonant frequency as the optimal crystal orientation angle and processing the resonant sensor according to the optimal crystal orientation angle.
9. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 7.
10. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of the method according to any of claims 1 to 7 are implemented when the computer program is executed by the processor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110578205.8A CN113343520B (en) | 2021-05-26 | 2021-05-26 | Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor |
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| CN202110578205.8A CN113343520B (en) | 2021-05-26 | 2021-05-26 | Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor |
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