CN113341070B - Method for evaluating etching solution - Google Patents
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- CN113341070B CN113341070B CN202110578218.5A CN202110578218A CN113341070B CN 113341070 B CN113341070 B CN 113341070B CN 202110578218 A CN202110578218 A CN 202110578218A CN 113341070 B CN113341070 B CN 113341070B
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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Abstract
The application discloses an assessment method of etching solution, which specifically comprises the following steps: a first film layer is formed on a first substrate. A second film layer is formed on the first film layer. And forming a first etching barrier layer with a preset pattern on the second film layer. The second film layer is etched to expose the first film layer. And etching the first film layer by using the etching solution to be tested to obtain an actual etching pattern of the first film layer. Actual etching parameters of the actual etched pattern are obtained. Presetting a reference etching pattern of the first film layer, and acquiring a reference etching parameter of the reference etching pattern. And comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested. The evaluation method of the etching solution can improve the development efficiency of the etching solution and avoid resource waste.
Description
Technical Field
The application relates to the technical field of display, in particular to an assessment method of etching solution.
Background
A common manufacturing process of the array substrate is to form a thin film transistor and various metal traces on a substrate. After the metal layer is formed in the array substrate, the metal is etched by using an etching solution to form the metal routing. Currently, the method for evaluating the developed etching solution is as follows: and etching the metal layer of the array substrate actually produced and prepared by using the etching solution, thereby completing the evaluation of the etching solution. However, the above-mentioned method for evaluating the etching solution is prone to waste of resources and is not favorable for improving the efficiency of developing the etching solution.
Disclosure of Invention
The application aims to provide an evaluation method of an etching solution, which can improve the research and development efficiency of the etching solution and avoid resource waste.
The embodiment of the application provides an evaluation method of an etching solution, which comprises the following steps:
forming a first film layer on a first substrate;
forming a second film layer on the first film layer;
forming a first etching barrier layer with a preset pattern on the second film layer;
etching the second film layer to expose the first film layer;
etching the first film layer by using an etching solution to be tested to obtain an actual etching pattern of the first film layer;
acquiring actual etching parameters of the actual etching pattern;
presetting a reference etching pattern of the first film layer, and acquiring reference etching parameters of the reference etching pattern;
and comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested.
In some embodiments, the step of etching the second membrane layer to expose the first membrane layer comprises:
and etching the second film layer to enable the end part of the first etching barrier layer to protrude out of the end part of the second film layer.
In some embodiments, further comprising:
forming a third film layer on the first substrate at the same time of forming the first film layer, wherein the third film layer is made of the same material as the first film layer; forming a first etching barrier layer with a preset pattern on the second film layer, and simultaneously forming a second etching barrier layer with a preset pattern on the third film layer, wherein the second etching barrier layer is made of the same material as the first etching barrier layer;
the step of etching the first film layer by using the etching solution to be tested to obtain the actual etching pattern of the first film layer further comprises:
and etching the third film layer by using the etching solution to be tested to obtain an etching pattern of the third film layer, and taking the etching pattern of the third film layer as a reference etching pattern of the first film layer.
In some embodiments, further comprising:
providing a second substrate, and forming a third film layer on the second substrate, wherein the third film layer is made of the same material as the first film layer; forming a second etching barrier layer with a preset pattern on the third film layer, wherein the second etching barrier layer is made of the same material as the first etching barrier layer;
the step of etching the first film layer by using the etching solution to be tested to obtain the actual etching pattern of the first film layer further comprises:
and etching the third film layer by using the etching solution to be tested to obtain an etching pattern of the third film layer, and taking the etching pattern of the third film layer as a reference etching pattern of the first film layer.
In some embodiments, the first membrane layer and the first etch stop layer have a first gap therebetween, and the third membrane layer and the second etch stop layer have a second gap therebetween;
the step of acquiring actual etching parameters of the actual etching pattern comprises:
acquiring a first etching width, wherein the first etching width is the width of the first gap;
the step of presetting a reference etching pattern of the first film layer and acquiring a reference etching parameter of the reference etching pattern comprises the following steps:
acquiring a second etching width, wherein the second etching width is the width of the second gap;
the step of comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested comprises:
and evaluating the etching solution to be tested according to the difference value of the first etching width and the second etching width.
In some embodiments, before the step of forming the second film layer on the first film layer, the method further comprises:
etching the first film layer to form a plurality of routing lines on the first film layer;
the step of forming a first etch stop layer having a predetermined pattern on the second film layer includes:
forming the first etching barrier layer on the second film layer, patterning the first etching barrier layer to expose the second film layer, wherein the first etching barrier layer is located on the routing line, and the edge of the routing line protrudes out of the edge of the first etching barrier layer;
the reference etching pattern is a pattern of the first film layer before the step of etching the first film layer by using the etching solution to be tested.
In some embodiments, the step of obtaining actual etching parameters of the actual etching pattern comprises:
acquiring a first quantity value, wherein the first quantity value is the total quantity of the routing;
the step of presetting the reference etching pattern of the first film layer and acquiring the reference etching parameters of the reference etching pattern comprises the following steps:
acquiring a second numerical value, wherein the second numerical value is the broken line number of the routing;
the step of comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested comprises:
and evaluating the etching solution to be tested according to the ratio of the second numerical value to the first numerical value.
In some embodiments, the step of forming a first film layer on a first substrate comprises:
forming a protruding structure on the first substrate;
forming the first film layer on the protruding structures, so that the first film layer forms a step surface on the edges of the protruding structures, where the step surface includes a first surface, a second surface, and a connecting surface, the connecting surface connects the first surface and the second surface, and a distance between the first surface and the first substrate is smaller than a distance between the second surface and the first substrate;
the step of etching the first film layer to form a plurality of traces on the first film layer includes:
etching the first film layer to enable the first film layer to form a plurality of routing lines, wherein each routing line covers the protruding structures;
the step of etching the second membrane layer to expose the first membrane layer comprises:
etching the second film layer to expose the first film layer, the second film layer covering the connection surface, the second film layer covering a portion of the first surface and a portion of the second surface.
In some embodiments, the second film layer has a thickness between 10 nanometers and 50 nanometers; the time for etching the first film layer by the etching solution to be tested is between 10s and 200 s; the temperature of the etching solution to be tested for etching the first film layer is between 30 and 60 ℃.
In some embodiments, the material of the first film layer is a metal, and the material of the second film layer is a semiconductor oxide.
In the method for evaluating an etching solution provided by the embodiment of the application, a first film layer is formed on a first substrate. A second membrane layer is formed over the first membrane layer. And forming a first etching barrier layer with a preset pattern on the second film layer. The second film layer is etched to expose the first film layer. Etching the first film layer by using an etching solution to be tested to obtain an actual etching pattern of the first film layer; and acquiring actual etching parameters of the actual etching pattern. Presetting a reference etching pattern of the first film layer, and acquiring reference etching parameters of the reference etching pattern. And comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested. According to the evaluation method of the etching solution, after the film layer structure to be tested is formed on the substrate to be tested, the substrate to be tested is etched through the etching solution, and the related parameters of the reference etching pattern and the actual etching pattern are compared to finish evaluation of the etching solution. The evaluation method of the etching solution can evaluate the etching solution in the development stage of the material, avoids evaluating the etching solution in an array substrate produced actually, improves the research and development efficiency of the etching solution, and avoids resource waste.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments and implementations of the application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of an evaluation method of an etching solution according to a first embodiment of the present disclosure.
Fig. 2 is a flowchart of an evaluation method of an etching solution according to a second embodiment of the present application.
Fig. 3 is a schematic diagram of a substrate to be tested obtained by performing step B31 in fig. 2 according to a second embodiment of the present disclosure.
Fig. 4 is a schematic diagram of a substrate to be tested and a reference substrate obtained after the step B41 in fig. 2 is performed according to a second embodiment of the present disclosure.
Fig. 5 is a schematic diagram of a substrate to be tested and a reference substrate obtained by performing step B51 in fig. 2 according to a second embodiment of the present disclosure.
Fig. 6 is a flowchart of an evaluation method of an etching solution according to a third embodiment of the present application.
Fig. 7 is a schematic diagram of a substrate to be tested before etching by using an etching solution to be tested according to a third embodiment of the present application.
Fig. 8 is a schematic diagram of a substrate to be tested obtained after the step B40 in fig. 6 is performed according to a third embodiment of the present disclosure.
Fig. 9 is a schematic diagram of a substrate to be tested obtained by performing step B50 in fig. 6 according to a third embodiment of the present disclosure.
Fig. 10 is a graph showing the relationship between Δ d in the second embodiment of the present application and the disconnection at the step in the third embodiment.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be noted that, in the embodiments of the present invention, it is to be understood that terms such as "including" or "having", etc., are intended to indicate the presence of the features, numbers, steps, actions, components, parts, or combinations thereof disclosed in the present specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, actions, components, parts, or combinations thereof are present or added. In various embodiments of the present invention, it should be understood that the sequence numbers of the following processes do not mean the execution sequence, and the execution sequence of each process should be determined by the function and the inherent logic of the process, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
As shown in fig. 1, fig. 1 is a flowchart of an evaluation method of an etching solution according to a first embodiment of the present application. The evaluation method of the array etching solution provided by the embodiment of the application specifically comprises the following steps:
step B10: a first film layer is formed on a first substrate.
Step B20: a second film layer is formed on the first film layer.
Step B30: and forming a first etching barrier layer with a preset pattern on the second film layer.
Step B40: the second film layer is etched to expose the first film layer.
Step B50: and etching the first film layer by using the etching solution to be tested to obtain an actual etching pattern of the first film layer.
Step B60: actual etching parameters of the actual etched pattern are obtained.
Step B70: presetting a reference etching pattern of the first film layer, and acquiring a reference etching parameter of the reference etching pattern.
Step B80: and comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested.
According to the evaluation method of the etching solution, the film layer structure to be tested is formed on the substrate to be tested to simulate the related structure on the array substrate, the substrate to be tested is etched through the etching solution, and the related parameters of the reference etching pattern and the actual etching pattern are compared to finish evaluation of the etching solution. The evaluation method of the etching solution can evaluate the etching solution in the development stage of the material, avoids evaluating the etching solution in an array substrate produced actually, improves the research and development efficiency of the etching solution, and avoids resource waste.
As shown in fig. 2, fig. 2 is a flowchart of an evaluation method of an etching solution according to a second embodiment of the present application.
With reference to fig. 3 to 5, the structure of (a) in fig. 3 to 5 is a schematic structural diagram of the substrate to be tested, and the structure of (b) in fig. 3 to 5 is a schematic structural diagram of the comparison substrate.
The method for evaluating the etching solution provided by the embodiment of the application specifically comprises the following steps:
step B11: a first film layer and a third film layer are formed on a first substrate.
Specifically, the third film layer 50 is formed at the same time as the first film layer 20 is formed on the first substrate 10, and the third film layer 50 is made of the same material as the first film layer 20.
The first substrate 10 may be a hard substrate or a flexible substrate. The material of the first substrate 10 may be selected according to the actual needs of the array substrate. Before the first film layer 20 is formed, other film layers, such as a buffer layer, a planarization layer, an insulating layer, or a conductive layer, may be formed on the first substrate 10 according to usage requirements.
The process of forming the first film layer 20 may be an electrochemical deposition, a chemical vapor deposition, or a metal layer sputtering process. The method for forming the first film layer 20 may be selected according to actual needs, and is not limited herein.
It should be noted that the step of forming the third film layer 50 is similar to the step of forming the first film layer.
The material of the first film layer 20 and the material of the third film layer 50 may be a metal material. For example, the material of the first film layer 20 and the material of the third film layer 50 may be at least one of copper (Cu), aluminum (Al), or molybdenum (Mo).
The first film layer 20 and the third film layer 50 are formed simultaneously on the same substrate, thereby saving the manufacturing process and the production raw material.
It is understood that the third film layer 50 may be formed on another substrate. Specifically, a second substrate is provided, and a third film layer 50 is formed on the second substrate, wherein the third film layer 50 is made of the same material as the first film layer 20.
Step B20: a second membrane layer is formed on the first membrane layer.
After the first film layer 20 is formed, a second film layer 30 is formed on the first film layer 20. The process of forming the second film layer 30 may be a chemical vapor deposition process or a magnetron sputtering process, and the above-mentioned method of forming the second film layer 30 may be selected according to actual needs, and is not limited herein.
The material of the second film layer 30 may be a semiconductor oxide. For example, the material of the second film layer 30 may be Indium Tin Oxide (ITO) or Indium Gallium Zinc Oxide (IGZO).
The thickness of the second film layer 30 may be between 10 nanometers and 50 nanometers. Specifically, the thickness of the second film layer 30 may be 10 nm, 20 nm, 25 nm, 30 nm, 40 nm or 50 nm.
Step B31: and forming a first etching barrier layer with a preset pattern on the second film layer, and forming a second etching barrier layer with a preset pattern on the third film layer.
After forming the second film layer 30, a second etch stop layer 60 having a predetermined pattern is formed on the third film layer 50 while forming the first etch stop layer 40 having a predetermined pattern on the second film layer 30, the second etch stop layer 60 being the same material as the first etch stop layer 40.
The specific steps of forming the first etch stop layer 40 with the predetermined pattern on the second film layer 30 include:
a photoresist material is coated on the second film layer 30 to form a first etch stop layer 40 on the second film layer 30. The first etch stop layer 40 covers the second membrane layer 30.
The first etch stop layer 40 is subjected to a local light irradiation process in combination with a mask plate.
The first etching stopper layer 40 after the partial light irradiation treatment is subjected to a development treatment. The developer may remove a portion of the first etch stop layer 40 to achieve patterning of the first etch stop layer 40.
It is to be understood that the specific step of forming the second etch stopper layer 60 having the predetermined pattern is the same as the specific step of forming the first etch stopper layer 40 having the predetermined pattern, and will not be described in detail herein.
As shown in fig. 3, after step 31 is completed, the substrate 100 to be tested of the experimental group includes a first substrate 10, a first film layer 20, a second film layer 30, and a first etching stop layer 40 having a predetermined pattern, which are stacked. The control substrate 200 of the control group includes a first substrate 10, a third film layer 50, and a second etch stopper layer 60 having a predetermined pattern, which are stacked.
In some embodiments, the control substrate 200 is formed by forming the third film layer 50 on the second substrate. At this time, the third film layer 50 on the second substrate is formed with the second etch stop layer 60 having the predetermined pattern and the first etch stop layer 40 having the predetermined pattern simultaneously with the second film layer 30 on the first substrate 10, respectively. The material of the second etch stopper 60 is the same as that of the first etch stopper 40.
The steps of forming the first etch stop layer 40 having the predetermined pattern and the second etch stop layer 60 having the predetermined pattern are as described above, and will not be described herein again.
Step B41: the second film layer is etched such that the end of the first etch stop layer protrudes beyond the end of the second film layer.
After the first etching stop layer 40 having the predetermined pattern is formed, the second film 30 is etched by the second film etching solution to expose the first film 20. After the etching is completed, the end of the first etch stop layer 40 protrudes from the end of the second film layer 30. That is, after the etching of the second film 30 is completed, the pre-etching gap 31 is formed between the patterned first etching stop layer 40 and the first film 20. The width of the pre-etched gap 31 is between 0.1 and 0.5 microns. Specifically, the width of the pre-etched slit 31 may be 0.1 micrometers, 0.2 micrometers, 0.3 micrometers, 0.4 micrometers, or 0.5 micrometers.
The second layer etching solution can etch the second layer 30 without affecting the first layer 20. Specifically, the second film etching solution may be a semiconductor oxide etching solution, such as one or a combination of oxalic acid, acetic acid, phosphoric acid, nitric acid solution, and sulfuric acid solution.
The etching time of the second film 30 is between 10s and 100 s. Specifically, the etching time of the second film layer 30 may be 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, or 100 s. The etching time of the second layer 30 is set according to the specific requirements of the experiment, and is not limited herein.
The etching temperature of the second film layer 30 is between 30 degrees celsius and 60 degrees celsius. Specifically, the etching temperature of the second film layer 30 may be 30 degrees celsius, 40 degrees celsius, 50 degrees celsius, or 60 degrees celsius.
Referring to fig. 4, after the second film 30 is etched by the second film etching solution, in the substrate 100 to be tested of the experimental group, the first film 20 is exposed from the second film 30, and the end of the first etching stop layer 40 protrudes from the end of the second film 30. A pre-etching gap 31 is formed between the first etching barrier layer 40 having a predetermined pattern and the first film layer 20. In the control substrate 200 of the control group, the second film layer can be etched by the second film layer etching solution, but the first film layer 20 is not affected. Since the material of the third film 50 is the same as that of the first film 20, the third film 50 is not affected by the second etching solution, and the control substrate 200 of the control group is not changed.
After the second film 30 is etched by using the second film etching solution, a pre-etching gap 31 is formed in the substrate 100 to be tested. When the etching solution to be measured is used to etch the first film layer 20 subsequently, the etching solution to be measured can form a concentration cell in the pre-etching gap 31, where the concentration cell is a phenomenon that a potential is generated due to the difference between the concentration of the etching solution in the pre-etching gap and the concentration of the etching solution outside the pre-etching gap. The concentration cell accelerates the etching of the first film layer 20, shortens the etching time, truly simulates the phenomenon that the concentration cell appears due to the existence of gaps in the actual array substrate, is beneficial to increasing effective data in experimental results, and improves the success rate of the experiment.
Step B51: and etching the first film layer and the third film layer by using the etching solution to be tested to obtain an actual etching pattern of the first film layer and an etching pattern of the third film layer.
After the second film 30 is etched, the first film 20 is etched by using the etching solution to be tested to obtain the actual etching pattern of the first film 20. The third film 50 is etched by using the etching solution to be tested to obtain the etching pattern of the third film 50.
Specifically, the first film 20 is soaked in the etching solution to be tested, and the etching solution to be tested etches the first film 20. The time for soaking the first film 20 in the etching solution to be tested is between 10s and 100 s. The time for the etching solution to be tested to etch the first film layer 20 may be 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, or 100 s.
It is understood that the time for soaking the first film layer 20 in the etching solution to be tested needs to be within a proper range. When the etching time of the first film 20 is too short, for example, the etching time of the first film 20 is less than 10 s. At this time, the first film layer 20 cannot form an actual etching pattern. When the etching time of the first film 20 is too long, for example, the etching time of the first film 20 is greater than 100 s. At this time, the etching solution to be tested has already contacted the first substrate 10, and the actual etching parameter value deviates from the true value, which is not favorable for the evaluation of the etching solution to be tested.
It should be noted that the experimental conditions for etching the first film layer 20 and the third film layer 50 by the etching solution to be tested are the same. The steps of etching the third film layer 50 with the etching solution to be tested are not described in detail.
Referring to fig. 5, after the second film 30 is etched, the first film 20 and the third film 50 are etched by the etchant to be tested. In the substrate 100 to be tested in the experimental group, the first film layer 20 is etched by the etching solution to be tested. The first film layer 20 and the first etch stop layer 40 have a first gap 21 therebetween. In the control substrate 200 in the control group, the third film 50 is etched by the etching solution to be tested. A second gap 51 is provided between the third membrane layer 50 and the second etch stop layer 60. Wherein the width of the first slit 21 is larger than the width of the second slit 51.
Before the first film 20 is etched by using the etching solution to be tested, the substrate 100 to be tested of the experimental group forms the pre-etching gap 31. When etching is performed using the etching solution to be measured, the etching solution to be measured enters the pre-etching gap 31. The etching solution to be measured forms a concentration cell in the pre-etched gap 31. Due to the presence of the concentration cells in the pre-etched gaps 31, the etching rate in the pre-etched gaps 31 increases. Therefore, after the etching is completed, the width of the first slit 21 is larger than the width of the second slit 51. The embodiment of the application can simulate the gaps in the photoresist layer in the real array substrate.
Step B61: and acquiring a first etching width which is the width of the first gap.
With reference to the structure in fig. 5(a), after the etching of the etching solution to be tested is completed, a first gap 21 is formed between the first film layer 20 and the first etching stop layer 40 of the substrate 100 to be tested in the experimental group. The width of the first slit 21 is acquired as an actual etching parameter of an actual etching pattern. That is, the width of the first slit 21 is acquired as the first etching width d 1.
When the etching is completed, the first etching width d1 may be obtained by a Scanning Electron Microscope (SEM). Specifically, the substrate 100 to be tested of the experimental group etched by the etching solution to be tested is sliced. The first etching width d1 in the test substrate 100 of the experimental group after the dicing process was obtained using a scanning electron microscope.
Step B71: and taking the etching pattern of the third film layer as a reference etching pattern of the first film layer.
The steps of presetting the reference etching pattern of the first film layer 20 specifically include: the etch pattern of the third film layer 50 is used as a reference etch pattern for the first film layer 20.
Step B72: and acquiring a second etching width which is the width of the second gap.
After the reference etching pattern of the first film layer 20 is determined, the reference etching parameters of the reference etching pattern are obtained.
With reference to the structure of fig. 5(b), after the etching of the etching solution to be tested is completed, a second gap 51 is formed between the third film layer 50 and the second etching stop layer 60 of the comparison substrate 200 of the comparison group. The width of the second slit 51 is acquired as an actual etching parameter of an actual etching pattern. That is, the width of the second slit 51 is obtained as the first etching width d 2.
Specifically, when the etching is completed, the second etching width d2 may be obtained by a Scanning Electron Microscope (SEM). Specifically, the control substrate 200 of the control group etched by the etching solution to be tested is subjected to slicing treatment. The second etching width d2 in the control substrate 200 of the control group after the dicing treatment was obtained using a scanning electron microscope.
Step B81: and evaluating the etching solution to be tested according to the difference value of the first etching width and the second etching width.
In conjunction with fig. 5, evaluation values Δ d, Δ d ═ d 1-d 2 were calculated. When the value of Δ d is larger, the lateral etching rate of the etching solution to be tested in the actual array substrate is also larger, and the risk of wire disconnection is easily increased by using the etching solution to be tested in the actual array substrate.
And when the value of delta d is greater than or equal to 1 micrometer, the etching solution to be tested is considered to be incapable of being used for etching the actual array substrate.
It is understood that the evaluation value may also be a ratio of the second etching width d2 to the first etching width d 1. I.e., Δ d ═ d2/d1, at this time. When the evaluation value is smaller, the lateral etching rate of the etching solution to be tested in the actual array substrate is also larger, and the risk of wire breakage caused by using the etching solution to be tested in the actual array substrate is increased.
In the actual production process of the array substrate of the display panel, it is usually necessary to etch the metal layer or the traces by using an etching solution. Before etching, a patterned photoresist layer is usually formed to protect the portions that need not be etched. Due to the step difference or uneven coating of the photoresist layer in the array substrate, the photoresist layer is easy to break or have gaps. When the metal layer or the wiring is etched by using the etching solution subsequently, the etching solution easily forms a concentration cell at the position of the gap of the photoresist layer, so that the etching rate around the gap is accelerated, and the probability of wire breakage in the array substrate is increased. Before the actual production of the substrate to be tested, a pre-etching gap is formed between the first etching barrier layer and the first film layer by forming the first film layer, the second film layer and the first etching barrier layer, and the condition that a broken film or a gap exists in a light resistance layer of an actual display panel is simulated. The method and the device can evaluate the etching solution to be tested in the development stage of the material, so that the resources can be saved and the research and development efficiency of the etching solution can be improved.
As shown in fig. 6, fig. 6 is a flowchart of an evaluation method of an etching solution according to a third embodiment of the present application.
With reference to fig. 7 to 9, the method for evaluating an etching solution provided in the embodiment of the present application specifically includes the following steps:
step B10: a first film layer is formed on a first substrate.
Specifically, the protrusion structure 70 is formed on the first substrate 10.
The first film layer 20 is formed on the raised structures 70 such that the first film layer 20 forms a step surface on the edges of the raised structures 70.
Referring to fig. 7, the structure shown in fig. 7(a) is a top view of the substrate 100 to be tested before being etched by the second film etching solution. The structure of fig. 7(b) is a cross-sectional view along a-a' of the structure of fig. 7 (a).
The first substrate 10 is stacked on the bump structure 70 and the first film layer 20. The step surface comprises a first surface 23, a second surface 24 and a connecting surface 25, wherein the connecting surface 25 connects the first surface 23 and the second surface 24, and the distance between the first surface 23 and the first substrate 10 is smaller than the distance between the second surface 24 and the first substrate 10.
It is understood that the protruding structure 70 may be a combination of one or more of a conductive layer, an insulating layer, and a dielectric layer, which are stacked.
Step B12: and etching the first film layer to form a plurality of wires on the first film layer.
After the first film layer 20 is formed, a plurality of traces 22 may be formed on the first film layer 20 through an etching process (fig. 7 to 9 of the present application take one trace 22 as an example, but not by way of limitation).
The first substrate 10 has a bump structure 70 formed thereon. When the first substrate 10 has the bump structures 70 formed thereon, each trace 22 covers the bump structures 70.
The reference etching pattern of the first film 20 is a pattern of the trace 22 formed after the first film 20 is etched.
Step B20: a second film layer is formed on the first film layer.
Specifically, the step of forming the second film layer 30 on the first film layer 20 may refer to step B20 of the second embodiment of the present application, and will not be described in detail herein.
When the protrusion structure 70 is formed on the first substrate 10, after the second film layer 30 is formed, a patterning process is performed on the second film layer 30.
Referring to fig. 7, the patterned second film layer 30 exposes the first film layer 20, the second film layer 30 covers the connecting surface 24, and the second film layer 30 covers a portion of the first surface 22 and a portion of the second surface 23.
Step B32: and forming a first etching barrier layer on the second film layer, patterning the first etching barrier layer to expose the second film layer, wherein the first etching barrier layer is positioned on the routing, and the edge of the routing protrudes out of the edge of the first etching barrier layer.
After forming the second film layer 30, a first etch stop layer 40 is formed on the second film layer 30. The step of forming the first etching stop layer 40 on the second film layer 30 may refer to step B31 of the second embodiment of the present application, and will not be described in detail herein.
After the first etching stop layer 40 is formed, the structure of the substrate to be tested formed by the present application is shown in fig. 7. The first substrate 10 is stacked on the bump structure 70, the first film 20, the second film 30 having a predetermined pattern, and the first etch stopper 40 having a predetermined pattern. A plurality of traces 22 (fig. 7 takes one trace as an example) are formed on the first film layer 20. The first film layer 20 forms a step surface on the edge of the protruding structure 70, where the step surface includes a first surface 23, a second surface 24, and a connecting surface 25, the connecting surface 25 connects the first surface 23 and the second surface 24, and a distance between the first surface 23 and the first substrate 10 is smaller than a distance between the second surface 24 and the first substrate 10.
The patterned second film layer 30 exposes the first film layer 20, the second film layer 30 covers the connecting surface 24, and the second film layer 30 covers a portion of the first surface 22 and a portion of the second surface 23. The width of the second film layer 30 is greater than the width of the edge of the first etch stop layer 40.
The first etching barrier layer 40 covers the trace 22 on the first film layer 20, and an edge of the trace 22 protrudes from an edge of the first etching barrier layer 40.
Step B40: the second film layer is etched to expose the first film layer.
Referring to fig. 8, the second film 30 is etched using the second film etching solution, and after the first etch stop layer 40 having the predetermined pattern is formed, the second film 30 is etched by the second film etching solution to expose the first film 20. The second film layer 30 covers the joint face 25, and the second film layer 30 covers a portion of the first surface 23 and a portion of the second surface 24.
The end of the first etch stop layer 40 protrudes beyond the end of the second film layer 30. That is, after the etching of the second film 30 is completed, the pre-etching gap 31 is formed between the patterned first etching barrier layer 40 and the first film.
The second layer etching solution can etch the second layer 30 without affecting the first layer 20. Specifically, the second film etching solution may be a semiconductor oxide etching solution, such as one or a combination of oxalic acid, acetic acid, phosphoric acid, nitric acid solution, and sulfuric acid solution.
The etching time of the second film 30 is between 50 and 200 s. Specifically, the etching time of the second film layer 30 may be 50s, 60s, 70s, 80s, 90s, 100s, 120s, 150s, 175s, or 200 s. The etching time of the second layer 30 is set according to the specific requirements of the experiment, and is not limited herein.
The etching temperature of the second film layer 30 is between 30 degrees celsius and 60 degrees celsius. Specifically, the etching temperature of the second film layer 30 may be 30 degrees celsius, 40 degrees celsius, 50 degrees celsius, or 60 degrees celsius.
The second film layer 30 is etched using the second film layer etching solution, and the resulting structure is shown in fig. 8.
The structure of fig. 8(a) is a top view of the substrate 100 to be tested after being etched by the second film etching solution. The structure of fig. 8(B) is a cross-sectional view of the structure of fig. 8(a) along B-B'.
After the etching of the second film layer etching solution is completed, the end of the first etching stop layer 40 protrudes out of the end of the second film layer 30. A pre-etch gap 31 is formed between the patterned first etch stop layer 40 and the first membrane layer 20.
After the second film 30 is etched by using the second film etching solution, a pre-etching gap 31 is formed in the substrate 100 to be tested. When the etching solution to be tested is used to etch the first film layer 20 subsequently, the etching solution to be tested can form a concentration cell in the pre-etching gap 31. The concentration cell accelerates the etching of the first film layer 20, shortens the etching time, truly simulates the phenomenon that the concentration cell appears due to the existence of gaps in the actual array substrate, is beneficial to increasing effective data in experimental results, and improves the success rate of the experiment.
Step B50: and etching the first film layer by using the etching solution to be tested to obtain an actual etching pattern of the first film layer.
After the second film 30 is etched, the first film 20 is etched by using the etching solution to be tested to obtain the actual etching pattern of the first film 20.
Specifically, the first film 20 is soaked in the etching solution to be tested, and the etching solution to be tested etches the first film 20. The time for soaking the first film 20 in the etching solution to be tested is between 10s and 100 s. The time for the etching solution to be tested to etch the first film layer 20 may be 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, or 100 s.
The first film layer 20 is etched by using the etching solution to be tested, and the resulting structure is shown in fig. 9.
The structure of fig. 9(a) is a top view of the substrate 100 to be tested after being etched by the etchant to be tested. The structure of fig. 9(b) is a cross-sectional view of the structure of fig. 9(a) along C-C'.
After the etching is completed, the trace 22 on the first film layer 20 is broken.
The actual etching pattern is a pattern obtained by breaking the trace 22 on the first film layer 20.
Step B62: a first quantity value is obtained, and the first quantity value is the total quantity of the routing wires.
In the embodiment of the present application, the reference etching pattern of the first film layer 20 is a pattern of the first film layer 20 before the step of etching the first film layer 20 by using the etching solution to be tested, that is, the reference etching pattern of the first film layer 20 is a pattern of the trace 22 formed after the first film layer 20 is etched. The actual etching pattern is the pattern of the first film 20 etched by the etching solution to be tested. Namely, the trace 22 on the first film layer 20 is broken.
After the etching of the etching solution to be tested is completed, all the traces 22 in the first film layer 20 can be observed by an automatic optical inspection instrument (AOI or AOH) to obtain a first quantitative value.
In some embodiments, after the etching of the etching solution to be tested is completed, the first quantitative value can be obtained by observing all the traces 22 in the first film layer 20 through an Optical Microscope (OM) or a scanning electron microscope after the first etching stop layer 40 is removed.
Step B73: and acquiring a second numerical value, wherein the second numerical value is the broken wire number of the routing.
After the etching of the etching solution to be tested is completed, the second numerical value can be obtained by observing the disconnection of the trace 22 in the first film layer 20 through an automatic optical inspection instrument (AOI or AOH).
In some embodiments, after the etching of the etching solution to be tested is completed, the second numerical value may be obtained by observing the broken line in the first film layer 20 through an Optical Microscope (OM) or a scanning electron microscope after the first etching barrier layer 40 is removed.
Step B82: and evaluating the etching solution to be tested according to the ratio of the second numerical value to the first numerical value.
And evaluating the etching solution to be tested according to the ratio of the second numerical value to the first numerical value. When the ratio of the second quantity value to the first quantity value is larger, that is, the ratio of the broken line number of the trace 22 to the total number of the traces is larger, in the actual array substrate, the risk of the broken line of the trace caused by using the etching solution to be tested in the actual array substrate increases.
It is understood that the etching solution to be tested can also be evaluated according to the difference between the first numerical value and the second numerical value.
The embodiment of the application forms a protruding structure on a first substrate. A second film layer is formed on the first film layer. A first etching barrier layer with a preset pattern is formed on the second film layer, and the edge of the wire protrudes out of the edge of the first etching barrier layer. After the first etching barrier layer with the preset pattern is formed, etching treatment is carried out on the second film layer through the second film layer etching liquid, so that a pre-etching gap is formed between the first etching barrier layer and the wiring. The formed pre-etching gap can simulate the condition of the photoresist layer and the wires on the step surface of the real array substrate, and the reliability of the evaluation of the etching solution to be tested can be improved.
It is understood that the first substrate 10, the protruding structures 70, the first film layer 20 and the first etching barrier layer 40 may be stacked on the substrate 100 to be tested by disposing a control substrate of a control group on the substrate to be tested, that is, the control substrate of the control group includes the first substrate, the protruding structures 70 and the first film layer 20. Because the comparison substrate of the comparison group is not provided with the second film layer 30, the pre-etching gap 31 cannot be formed, and the etching solution to be detected does not form a concentration cell effect on the comparison substrate of the comparison group. By comparing the etching widths of the first film layer 20 on the substrate to be tested in the experimental group and the control substrate in the control group, the difference between the lateral etching rates of the etching solution to be tested can be compared, thereby evaluating the etching solution.
It is understood that the raised structure 70 may not be disposed on the substrate 100 to be tested, so as to evaluate the disconnection of the substrate 100 to be tested at the non-step position. Specifically, the first film layer 20 may be formed on the first substrate 10. The first film layer 20 is etched to form a plurality of traces 22 on the first film layer 20. The reference etching pattern of the first film 20 is a pattern of the trace 22 formed after the first film 20 is etched. A second film layer 30 is formed on the first film layer 20. A first etch stop layer 40 is formed on the second film layer 30. The second layer 30 is etched to expose the first layer 20. The first film layer 20 is etched by using the etching solution to be tested to obtain the actual etching pattern of the first film layer 20. The actual etching pattern is a pattern obtained by breaking the trace 22 on the first film layer 20. A first quantity value is obtained, and the first quantity value is the total quantity of the traces 22. A second numerical value is obtained, wherein the second numerical value is the broken line number of the trace 22. And evaluating the etching solution to be tested according to the ratio of the second numerical value to the first numerical value.
As shown in fig. 10, fig. 10 is a relationship diagram of Δ d of the second embodiment and the broken line at the step of the third embodiment.
As shown in fig. 10, the larger the evaluation value Δ d obtained by the difference between the first etching width d1 and the second etching width d2, the larger the number of broken lines at the corresponding step, and there is a proportional relationship therebetween.
The embodiment of the application provides an evaluation method of an etching solution, which comprises the steps of etching a substrate to be tested through the etching solution after preparing a film layer structure to be tested of the substrate to be tested, and comparing relevant parameters of a reference etching pattern with relevant parameters of an actual etching pattern to finish evaluation of the etching solution. The evaluation method of the etching solution can evaluate the etching solution in the development stage of the material, avoids evaluating the etching solution in an array substrate produced actually, improves the research and development efficiency of the etching solution, and avoids resource waste.
In summary, although the embodiments of the present application are described in detail above, the above embodiments are not intended to limit the present application, and it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present application.
Claims (7)
1. A method for evaluating an etching solution, comprising:
forming a first film layer on a first substrate, and simultaneously forming a third film layer, wherein the third film layer is made of the same material as the first film layer;
forming a second film layer on the first film layer;
forming a first etching barrier layer with a preset pattern on the second film layer, and simultaneously forming a second etching barrier layer with a preset pattern on the third film layer, wherein the second etching barrier layer is made of the same material as the first etching barrier layer;
etching the second film layer to expose the first film layer;
etching the first film layer by using an etching solution to be tested to obtain an actual etching pattern of the first film layer, and etching the third film layer by using the etching solution to be tested to obtain an etching pattern of the third film layer;
acquiring actual etching parameters of the actual etching pattern;
taking the etching pattern of the third film layer as a reference etching pattern of the first film layer, and acquiring a reference etching parameter of the reference etching pattern;
and comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested.
2. The method of claim 1, wherein the step of etching the second film layer to expose the first film layer comprises:
and etching the second film layer to enable the end part of the first etching barrier layer to protrude out of the end part of the second film layer.
3. The method according to claim 1, wherein a first gap is provided between the first film layer and the first etching stopper layer, and a second gap is provided between the third film layer and the second etching stopper layer;
the step of acquiring actual etching parameters of the actual etching pattern comprises:
acquiring a first etching width, wherein the first etching width is the width of the first gap;
the step of obtaining the reference etching parameters of the reference etching pattern comprises:
acquiring a second etching width, wherein the second etching width is the width of the second gap;
the step of comparing the reference etching parameter with the actual etching parameter to evaluate the etching solution to be tested comprises:
and evaluating the etching solution to be tested according to the difference value of the first etching width and the second etching width.
4. A method for evaluating an etching solution, comprising:
forming a first film layer on a first substrate;
etching the first film layer to form a plurality of routing lines on the first film layer;
forming a second film layer on the first film layer;
forming a first etching barrier layer on the second film layer, patterning the first etching barrier layer to expose the second film layer, wherein the first etching barrier layer is positioned on the routing line, and the edge of the routing line protrudes out of the edge of the first etching barrier layer;
etching the second film layer to expose the first film layer;
etching the first film layer by using an etching solution to be tested to obtain an actual etching pattern of the first film layer;
acquiring actual etching parameters of the actual etching pattern, wherein the actual etching pattern comprises a second numerical value, and the second numerical value is the broken line number of the routing;
obtaining a reference etching parameter of a reference etching pattern of the first film layer, wherein the reference etching pattern is a pattern of the first film layer before etching the first film layer by using an etching solution to be tested, the reference etching parameter comprises a first quantity value, and the first quantity value is the total quantity of the routing;
and evaluating the etching solution to be tested according to the ratio of the second numerical value to the first numerical value.
5. The method according to claim 4, wherein the step of forming the first film layer on the first substrate comprises:
forming a protruding structure on the first substrate;
forming the first film layer on the protruding structure, so that the first film layer forms a step surface on an edge of the protruding structure, the step surface includes a first surface, a second surface and a connecting surface, the connecting surface connects the first surface and the second surface, and a distance between the first surface and the first substrate is smaller than a distance between the second surface and the first substrate;
the step of etching the first film layer to form a plurality of traces on the first film layer includes:
etching the first film layer to enable the first film layer to form a plurality of routing lines, wherein each routing line covers the protruding structures;
the step of etching the second membrane layer to expose the first membrane layer comprises:
etching the second film layer to expose the first film layer, the second film layer covering the connection surface, the second film layer covering a portion of the first surface and a portion of the second surface.
6. The method according to claim 4, wherein the thickness of the second film layer is between 10 nm and 50 nm; the time for the etching solution to be tested to etch the first film layer is between 10s and 200 s; the temperature of the etching solution to be tested for etching the first film layer is between 30 and 60 ℃.
7. The method according to claim 4, wherein the first film is made of a metal and the second film is made of a semiconductor oxide.
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| JP5541266B2 (en) * | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | Method for evaluating etching conditions of pattern forming film |
| CN103972075A (en) * | 2014-05-05 | 2014-08-06 | 京东方科技集团股份有限公司 | Etching method and array substrate |
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