CN113257732A - 基板定位装置、基板定位方法以及接合装置 - Google Patents
基板定位装置、基板定位方法以及接合装置 Download PDFInfo
- Publication number
- CN113257732A CN113257732A CN202110152066.2A CN202110152066A CN113257732A CN 113257732 A CN113257732 A CN 113257732A CN 202110152066 A CN202110152066 A CN 202110152066A CN 113257732 A CN113257732 A CN 113257732A
- Authority
- CN
- China
- Prior art keywords
- rotation
- substrate
- rotation shaft
- holding
- shaft portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C17/00—Sliding-contact bearings for exclusively rotary movement
- F16C17/10—Sliding-contact bearings for exclusively rotary movement for both radial and axial load
- F16C17/102—Sliding-contact bearings for exclusively rotary movement for both radial and axial load with grooves in the bearing surface to generate hydrodynamic pressure
- F16C17/107—Sliding-contact bearings for exclusively rotary movement for both radial and axial load with grooves in the bearing surface to generate hydrodynamic pressure with at least one surface for radial load and at least one surface for axial load
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/02—Sliding-contact bearings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/04—Ball or roller bearings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/04—Ball or roller bearings
- F16C29/045—Ball or roller bearings having rolling elements journaled in one of the moving parts
- F16C29/046—Ball or roller bearings having rolling elements journaled in one of the moving parts with balls journaled in pockets
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C32/00—Bearings not otherwise provided for
- F16C32/06—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings
- F16C32/0603—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion
- F16C32/0614—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion the gas being supplied under pressure, e.g. aerostatic bearings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C2223/00—Surface treatments; Hardening; Coating
- F16C2223/30—Coating surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
- H01L2224/75804—Translational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
- H01L2224/75822—Rotational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80009—Pre-treatment of the bonding area
- H01L2224/8001—Cleaning the bonding area, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80009—Pre-treatment of the bonding area
- H01L2224/8001—Cleaning the bonding area, e.g. oxide removal step, desmearing
- H01L2224/80013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/8012—Aligning
- H01L2224/80121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Fluid Mechanics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明提供使基板的定位精度提高的基板定位装置、基板定位方法以及接合装置。本公开的基板定位装置具备保持部和旋转机构。保持部保持基板。旋转机构使保持部旋转。另外,旋转机构具备旋转轴部、轴承部、基座部、驱动部、以及阻尼机构。旋转轴部固定于保持部。轴承部以未接触状态支承旋转轴部。基座部固定轴承部。驱动部使旋转轴部旋转。阻尼机构包括与基座部连接的轨道和与旋转轴部连接的滑动件,利用在轨道与滑动件之间产生的阻力产生针对旋转轴部与基座部之间的相对动作的阻尼力。
Description
技术领域
本公开涉及基板定位装置、基板定位方法以及接合装置。
背景技术
以往,公知有将半导体晶圆等基板彼此接合的接合装置(参照专利文献1)。
现有技术文献
专利文献
专利文献1:日本特开2018-147944号公报
发明内容
发明要解决的问题
本公开提供一种提高基板的定位精度的技术。
用于解决问题的方案
本公开的一形态的基板定位装置具备保持部和旋转机构。保持部保持基板。旋转机构使保持部旋转。另外,旋转机构具备旋转轴部、轴承部、基座部、驱动部、以及阻尼机构。旋转轴部固定于保持部。轴承部以未接触状态支承旋转轴部。基座部固定轴承部。驱动部使旋转轴部旋转。阻尼机构包括与基座部连接的轨道和与旋转轴部连接的滑动件,利用在轨道与滑动件之间产生的阻力产生针对旋转轴部与基座部之间的相对动作的阻尼力。
发明的效果
根据本公开,能够使基板的定位精度提高。
附图说明
图1是表示实施方式的接合系统的结构的示意图。
图2是表示实施方式的第1基板和第2基板的接合前的状态的示意图。
图3是表示实施方式的接合装置的结构的示意图。
图4是实施方式的旋转机构的俯视图。
图5是实施方式的阻尼机构的俯视图。
图6是表示实施方式的接合系统所执行的处理的顺序的流程图。
具体实施方式
以下,参照附图,同时详细地说明用于实施本公开的基板定位装置、基板定位方法以及接合装置的形态(以下,记载为“实施方式”)。此外,本公开并不被该实施方式限定。另外,各实施方式能够在不使处理内容矛盾的范围内适当组合。另外,在以下的各实施方式中,对相同的部位标注相同的附图标记,省略重复的说明。
另外,在以下所示的实施方式中,存在使用“一定”、“正交”、“垂直”或者“平行”这样的表述的情况,但这些表述无需严密地是“一定”、“正交”、“垂直”或者“平行”。即、上述的各表述设为容许例如制造精度、设置精度等的偏差。
另外,在以下参照的各附图中,为了使说明容易理解,存在表示正交坐标系的情况,该正交坐标系规定相互正交的X轴方向、Y轴方向以及Z轴方向,将Z轴正方向设为铅垂朝上方向。另外,存在将以铅垂轴线为旋转中心的旋转方向称为θ方向的情况。
在将基板彼此接合的接合装置中,在将基板彼此接合之前进行基板的旋转方向的定位。该旋转方向的定位精度的提高牵涉到基板的接合精度的提高。因而,期待基板的旋转方向的定位精度的提高。
此外,基板的旋转方向的定位精度的提高并不限于接合装置,在基板的检查装置(探针装置)等其他装置中也期待。以下,说明将本公开的基板定位装置和基板定位方法适用到接合装置的情况的实施方式,但本公开的基板定位装置和基板定位方法也能够适用于除了接合装置以外的装置。
<接合系统的结构>
首先,参照图1和图2而对实施方式的接合系统的结构进行说明。图1是表示实施方式的接合系统的结构的示意图。另外,图2是表示实施方式的第1基板和第2基板的接合前的状态的示意图。
图1所示的接合系统1通过接合第1基板W1和第2基板W2,而形成重合基板T(参照图2)。
第1基板W1和第2基板W2是单晶硅晶圆,在板面形成有多个电子电路。第1基板W1和第2基板W2大致同径。此外,第1基板W1和第2基板W2中的一者例如也可以是未形成有电子电路的基板。
以下,如图2所示,将第1基板W1的板面中的与第2基板W2接合那一侧的板面记载为“接合面W1j”,将与接合面W1j相反的一侧的板面记载为“非接合面W1n”。另外,将第2基板W2的板面中的与第1基板W1接合那一侧的板面记载为“接合面W2j”,将与接合面W2j相反的一侧的板面记载为“非接合面W2n”。
如图1所示,接合系统1具备送入送出站2和处理站3。送入送出站2配置于处理站3的X轴负方向侧,与处理站3一体地连接。
送入送出站2具备载置台10和输送区域20。载置台10具备多个载置板11。在各载置板11分别载置以水平状态收纳多张(例如25张)基板的盒C1~C4。盒C1能够收纳多张第1基板W1,盒C2能够收纳多张第2基板W2,盒C3能够收纳多张重合基板T。盒C4是用于回收例如产生了不良情况的基板的盒。此外,载置于载置板11的盒C1~C4的个数并不限定于图示的个数。
输送区域20以与载置台10相邻的方式配置于载置台10的X轴正方向侧。在输送区域20中设置有在Y轴方向上延伸的输送路径21和能够沿着输送路径21移动的输送装置22。输送装置22不仅能够在Y轴方向上移动,也能够在X轴方向上移动且能够绕Z轴回转。输送装置22在载置到载置板11的盒C1~C4与随后论述的处理站3的第3处理块G3之间进行第1基板W1、第2基板W2以及重合基板T的输送。
在处理站3设置有例如3个处理块G1、G2、G3。第1处理块G1配置于处理站3的背面侧(图1的Y轴正方向侧)。另外,第2处理块G2配置于处理站3的正面侧(图1的Y轴负方向侧),第3处理块G3配置于处理站3的送入送出站2侧(图1的X轴负方向侧)。
在第1处理块G1中配置有对第1基板W1的接合面W1j和第2基板W2的接合面W2j进行改性的表面改性装置30。表面改性装置30以如下方式对接合面W1j、W2j进行改性:切断第1基板W1的接合面W1j和第2基板W2的接合面W2j中的SiO2的键而设为单键的SiO,之后易于亲水化。
具体而言,在表面改性装置30中,在例如减压气氛下,作为处理气体的氧气或氮气被激励而等离子体化、并离子化。然后,其氧离子或氮离子向第1基板W1的接合面W1j和第2基板W2的接合面W2j照射,从而对接合面W1j、W2j进行等离子体处理并改性。
另外,在第1处理块G1中配置有表面亲水化装置40。表面亲水化装置40利用例如纯水使第1基板W1的接合面W1j和第2基板W2的接合面W2j亲水化,并且,清洗接合面W1j、W2j。具体而言,表面亲水化装置40例如一边使保持到旋转吸盘的第1基板W1或第2基板W2旋转,一边向该第1基板W1或第2基板W2上供给纯水。由此,供给到第1基板W1或第2基板W2上的纯水在第1基板W1的接合面W1j或第2基板W2的接合面W2j上扩散,使接合面W1j、W2j亲水化。
在此,表示了表面改性装置30和表面亲水化装置40横排地配置的情况的例子,但表面亲水化装置40也可以层叠于表面改性装置30的上方或下方。
在第2处理块G2中配置有接合装置41。接合装置41利用分子间力接合亲水化后的第1基板W1和第2基板W2。随后论述接合装置41的具体的结构。
在由第1处理块G1、第2处理块G2以及第3处理块G3围成的区域中形成有输送区域60。在输送区域60中配置有输送装置61。输送装置61具有在例如铅垂方向、水平方向以及绕铅垂轴线移动自由的输送臂。该输送装置61在输送区域60内移动,向与输送区域60相邻的第1处理块G1、第2处理块G2以及第3处理块G3内的预定的装置输送第1基板W1、第2基板W2以及重合基板T。
另外,接合系统1具备控制装置70。控制装置70控制接合系统1的动作。该控制装置70是例如计算机,具备未图示的控制部和存储部。控制部包括微型计算机、各种电路,该微型计算机具有CPU(中央处理单元:Central Processing Unit)、ROM(只读存储器:ReadOnly Memory)、RAM(随机存取存储器:Random Access Memory)、输入输出端口等。该微型计算机的CPU通过读出并执行被存储于ROM的程序,实现随后论述的控制。另外,存储部由例如RAM、闪存(Flash Memory)等半导体存储器元件、或硬盘、光盘等存储装置实现。
此外,也可以是,该程序记录到能够由计算机读取的记录介质,从该记录介质安装到控制装置70的存储部。作为能够由计算机读取的记录介质,存在例如硬盘(HD)、软盘(FD)、光盘(CD)、磁光盘(MO)、存储卡等。
<接合装置的结构>
接着,参照图3而对接合装置41的结构进行说明。图3是表示实施方式的接合装置41的结构的示意图。
如图3所示,接合装置41具备壳体100、第1保持部101、以及第2保持部102。另外,接合装置41具备上部拍摄部103和下部拍摄部104。另外,接合装置41具备升降机构105(移动机构的一个例子)、第1水平移动部106、第2水平移动部107、以及旋转机构108。
壳体100例如具备底座100a、竖立设置到底座100a的多个支柱100b、以及架设到多个支柱100b的梁部100c。
第1保持部101是例如真空吸盘,与未图示的真空泵等抽吸装置连接。使用抽吸装置所产生的抽吸力而对位于吸附面(第1保持部101的下表面)的第1基板W1进行抽真空,从而第1保持部101从上方吸附保持第1基板W1。
第2保持部102是例如真空吸盘,与未图示的真空泵等抽吸装置连接。使用抽吸装置所产生的抽吸力而对位于吸附面(第2保持部102的上表面)的第2基板W2进行抽真空,从而第2保持部102从下方吸附保持第2基板W2。
上部拍摄部103拍摄被保持到第2保持部102的第2基板W2的上表面(接合面W2j)。上部拍摄部103安装于例如壳体100的梁部100c。作为上部拍摄部103,能使用例如CCD(电荷耦合器件:Charge Coupled Device)照相机等。
下部拍摄部104拍摄被保持到第1保持部101的第1基板W1的下表面(接合面W1j)。下部拍摄部104安装于例如升降机构105的侧方。作为下部拍摄部104,能使用例如CCD照相机等。
第2保持部102固定于升降机构105,该升降机构105设置到第2保持部102的下方。升降机构105使第2保持部102沿着铅垂方向(Z轴方向)移动。
升降机构105固定于第1水平移动部106,该第1水平移动部106设置到升降机构105的下方。第1水平移动部106使升降机构105沿着水平方向移动。具体而言,在第1水平移动部106的下方设置有沿着Y轴方向延伸的一对轨道161,通过第1水平移动部106沿着一对轨道161移动,使升降机构105沿着Y轴方向移动。
一对轨道161固定于第2水平移动部107。第2水平移动部107借助一对轨道161使第1水平移动部106沿着水平方向移动。具体而言,在第2水平移动部107的下方设置有沿着X轴方向延伸的一对轨道171。通过第2水平移动部107沿着一对轨道171移动,借助一对轨道161使第1水平移动部106沿着X轴方向移动。一对轨道171固定于壳体100的底座100a。
第1保持部101固定于旋转机构108,该旋转机构108设置到第1保持部101的上方。旋转机构108使第1保持部101绕铅垂轴线(Z轴)旋转。由此,调整被保持到第1保持部101的第1基板W1的θ方向的位置。
旋转机构108具备:旋转轴部181,其固定于第1保持部101;多个空气轴承182,其用于以未接触状态支承旋转轴部181;以及基座部183,其用于固定多个空气轴承182。
旋转轴部181例如具备:圆柱部181a,其在铅垂方向上延伸;第1凸缘部181b,其设置到圆柱部181a的下部;以及第2凸缘部181c,其设置到圆柱部181a的上部。第1保持部101固定于第1凸缘部181b的下表面。
多个空气轴承182配置于旋转轴部181的第2凸缘部181c的外周。在实施方式中,旋转机构108具备4个空气轴承182(参照随后论述的图4)。4个空气轴承182在第2凸缘部181c的周向上均等地配置,即以90度间隔配置。因此,4个空气轴承182中的两个隔着第2凸缘部181c的中心(即、旋转轴部181的中心)相对配置,剩余的两个也隔着第2凸缘部181c的中心相对配置。
此外,在此,旋转机构108也可以具备形成为圆环状的1个空气轴承来替代多个空气轴承182。
多个空气轴承182通过从第2凸缘部181c的下方朝向第2凸缘部181c的下表面(轴支承面的一个例子)向铅垂上方喷出压缩空气,使旋转轴部181上浮。另外,多个空气轴承182从第2凸缘部181c的外方向第2凸缘部181c的周面(轴支承面的一个例子)喷出压缩空气。具体而言,各空气轴承182沿着第2凸缘部181c的径向(图4所示的沿着单点划线的方向)喷出压缩空气。换言之,各空气轴承182朝向隔着第2凸缘部181c的中心相对配置的另一空气轴承182喷出压缩空气。
从多个空气轴承182沿着水平方向喷出的压缩空气在水平方向上推压旋转轴部181。在水平方向上推压该旋转轴部181的力平衡的位置成为旋转轴部181的旋转中心R0(参照图4)。
基座部183是例如平板状的构件,固定于壳体100的梁部100c。上述的多个空气轴承182固定于该基座部183的上表面。
另外,在基座部183形成有在铅垂方向上贯通基座部183的贯通口183a。贯通口183a比上述的旋转轴部181的圆柱部181a大径。在该贯通口183a贯穿有旋转轴部181的圆柱部181a。旋转轴部181的第1凸缘部181b配置于比基座部183靠下方的位置,第2凸缘部181c配置于比基座部183靠上方的位置。如此,旋转轴部181与基座部183未接触。
如以上这样,实施方式的旋转机构108使用多个空气轴承182而以未接触状态支承旋转轴部181。由此,与使用例如滚珠轴承等接触式的轴承构件而支承旋转轴部181的情况相比较,实施方式的旋转机构108能够以极其微小的力使旋转轴部181旋转。因而,实施方式的旋转机构108即使是在例如使旋转轴部181以nm级旋转的情况下,也能够获得较高的响应性。
然而,以未接触状态支承旋转轴部181的方法有可能在旋转轴部181的静定性方面成为问题。即、如上所述,旋转轴部181的旋转中心R0是通过从多个空气轴承182沿着水平方向喷出的压缩空气的力的平衡而形成的。然而,该平衡的位置有可能由于例如振动等的微小的外力而微小地偏离。因此,以未接触状态支承旋转轴部181的方法难以精度良好地保持旋转轴部181的旋转中心R0。这样的静定性的问题在使旋转轴部181以nm级旋转的情况下尤其显著。
旋转轴部181的旋转中心R0的偏差牵涉到第1基板W1与第2基板W2之间的接合精度的降低。因此,优选尽量不产生旋转轴部181的旋转中心R0的偏差。
因此,在实施方式的旋转机构108中,通过设置对旋转轴部181的驱动施加阻力的阻尼机构,使旋转轴部181的静定性提高。由此,通过提高旋转轴部181的静定性,实施方式的旋转机构108能够使第1基板W1的旋转方向的定位精度提高。以下,对旋转机构108的具体的结构进行说明。
此外,在此省略图示,但接合装置41在图4所示的第1保持部101、第2保持部102等的前段设置有传输部、位置调节机构、翻转机构等。传输部用于暂时载置第1基板W1、第2基板W2以及重合基板T。位置调节机构用于调节第1基板W1和第2基板W2的水平方向的朝向。翻转机构用于使第1基板W1的表背翻转。
<旋转机构的结构>
接着,参照图4而对旋转机构108的结构进行说明。图4是实施方式的旋转机构108的俯视图。
如图4所示,旋转机构108还具备驱动部184、位置传感器185、以及阻尼机构186。
驱动部184是例如直动致动器,具备滑动件184a、螺杆184b、以及驱动源184c。滑动件184a固定于旋转轴部181和螺杆184b。螺杆184b在水平方向(在此是X轴方向)上延伸。螺杆184b固定于基座部183。驱动源184c是例如马达,固定于基座部183,用于使螺杆184b旋转。
驱动部184使用驱动源184c而使螺杆184b旋转,从而使固定到螺杆184b的滑动件184a沿着X轴方向移动。由此,驱动部184能够使固定到滑动件184a的旋转轴部181旋转。驱动部184使旋转轴部181旋转的范围是例如±1度左右。
位置传感器185是例如线性标尺。位置传感器185固定于基座部183,用于检测旋转轴部181的水平方向上的位置。虽然在此省略图示,但位置传感器185在旋转轴部181中的第2凸缘部181c的外周设置有多个。例如,旋转机构108除了图4所示的位置以外,还在例如设置驱动部184的位置和设置阻尼机构186的位置也设置有位置传感器185。接合装置41能够使用这多个位置传感器185而测定旋转轴部181的旋转量(旋转角度)和偏心量。
阻尼机构186产生针对旋转轴部181与基座部183之间的相对动作的阻尼力。
<阻尼机构的结构>
接着,参照图5而对阻尼机构186的结构进行说明。图5是实施方式的阻尼机构186的俯视图。
如图5所示,实施方式的阻尼机构186包括轨道201和能够相对于轨道201直线运动的滑动件202。实施方式的阻尼机构186用于利用在轨道201与滑动件202之间产生的阻力产生针对旋转轴部181与基座部183之间的相对动作的阻尼力。
其中,旋转轴部181与基座部183之间的相对动作是指,以基座部183为基准的(由多个位置传感器185检测的)旋转轴部181的移位。旋转轴部181与基座部183之间的相对动作除了例如旋转轴部181绕旋转中心R0旋转的旋转动作之外,还包括旋转轴部181的水平移动。
旋转轴部181的水平移动是指旋转中心R0的水平方向的偏离(偏心)。旋转轴部181的水平移动可能由于例如振动等干扰而产生。若由于干扰而基座部183振动,则固定到基座部183的多个空气轴承182振动。其结果,从多个空气轴承182喷射的压缩空气的力平衡的位置变化,与此相伴,旋转轴部181水平移动。具体而言,旋转轴部181(换言之,旋转中心R0)在nm范围内振动。
轨道201借助第1安装构件203固定于基座部183。第1安装构件203具有固定到基座部183的多个(在此是两个)支柱231,在比旋转轴部181高的位置处支承轨道201。轨道201是直线状,在水平方向(在此是X轴方向)上延伸。
滑动件202借助轴承221与轨道201连接,沿着轨道201移动。滑动件202借助随后论述的第1旋转构件204以及第2旋转构件205与旋转轴部181连接,滑动件202追随旋转轴部181的移动而在轨道201上移动。
阻尼机构186还具备第1旋转构件204、第2旋转构件205、以及施力构件206。
第1旋转构件204固定于第2安装构件207,该第2安装构件207固定到旋转轴部181。第2旋转构件205固定于滑动件202,与滑动件202一起在轨道201上移动。因此,滑动件202追随旋转轴部181的移动而在轨道201上移动。此外,也可以在第2安装构件207设置前述的位置传感器185(线性标尺)。
第1旋转构件204是例如凸轮从动件,具备第1旋转轴241和第1旋转体242。第1旋转轴241在铅垂方向上延伸。第1旋转轴241使基端部固定于第2安装构件207,在顶端部处将第1旋转体242支承成能够旋转。第1旋转体242是例如圆筒形状的辊,绕在铅垂方向上延伸的旋转轴线R1旋转。
第2旋转构件205是例如凸轮从动件,具备第2旋转轴251和第2旋转体252。第2旋转轴251在水平方向上延伸。第2旋转轴251使基端部固定于滑动件202,在顶端部处将第2旋转体252支承成能够旋转。第2旋转体252是例如圆筒形状的辊,绕在水平方向上延伸的旋转轴线R2旋转。第2旋转构件205配置于第1旋转构件204的X轴正方向侧。
在图5中示出有驱动部184的驱动力未作用于旋转轴部181的初始状态的旋转机构108。在该初始状态下,第1旋转构件204的第1旋转体242与第2旋转构件205的第2旋转体252接触。此外,第1旋转体242与第2旋转体252接触的状态由随后论述的施力构件206维持。
另外,在初始状态下,第2旋转构件205的旋转轴线R2相对于连结旋转轴部181的旋转中心R0(参照图4)和第1旋转构件204的旋转轴线R1的直线L1倾斜。旋转轴线R2与直线L1之间的夹角设定成比旋转轴部181的转动范围(例如±1度)大。例如旋转轴线R2与直线L1之间的夹角比1度大且比10度小。
施力构件206对第1旋转构件204的第1旋转体242和第2旋转构件205的第2旋转体252向相互接触的方向施力。施力构件206是例如拉簧,与轨道201平行地配置。具体而言,施力构件206的假想的弹簧轴线L2在X轴方向上延伸。施力构件206的一端安装于第1支柱261,该第1支柱261固定到滑动件202。另外,施力构件206的另一端安装于第2支柱262,该第2支柱262固定到第2安装构件207。
此外,在初始状态下,上述的直线L1在Y轴方向上延伸,与施力构件206的弹簧轴线L2正交。
施力构件206向X轴负方向对滑动件202施力。其结果,固定到滑动件202的第2旋转构件205被向X轴负方向、即与第1旋转构件204接触的方向施力。由此,维持第1旋转构件204的第1旋转体242与第2旋转构件205的第2旋转体252接触着的状态。
若由于例如干扰而对旋转轴部181施加微振动,则旋转轴部181的振动经由滑动件202向轨道201传递。如上所述,在轨道201与滑动件202之间存在滑动阻力、具体而言轴承221的滚动阻力。该阻力成为针对旋转轴部181与基座部183之间的相对动作的阻尼力,能够抑制旋转轴部181的振动。即、能够使旋转轴部181的静定性提高。
如此,实施方式的阻尼机构186通过产生针对旋转轴部181与基座部183之间的相对动作的阻尼力,即使是在以未接触状态支承旋转轴部181的情况下,也能够使旋转中心R0的静定性提高。因而,根据实施方式的接合装置41,能够使第1基板W1的定位精度提高,进而,能够使第1基板W1与第2基板W2之间的接合精度提高。
轴承221具体而言是滚珠轴承,也可以是滚柱轴承。滚柱轴承是面接触型,因此,与如滚珠轴承这样呈点接触型的轴承相比较,减振性较高。因而,通过使用滚柱轴承,能够针对旋转轴部181与基座部183之间的相对动作使静定性更加提高。此外,不过,滑动件202的轴承并不限定于轴承221,也可以使用滚珠轴承。
另外,实施方式的阻尼机构186具有由第1旋转构件204和第2旋转构件205构成的连杆机构。由此,实施方式的阻尼机构186能够利用第1旋转体242和第2旋转体252的旋转运动吸收旋转轴部181的旋转运动和滑动件202的直线运动的误差,同时机械地连接基座部183和旋转轴部181。
另外,第1旋转构件204和第2旋转构件205由于施力构件206的作用力而维持相互接触的状态。该施力构件206的作用力的大部分成为将第2旋转构件205按压于第1旋转构件204的力。然而,如上所述,第2旋转构件205的旋转轴线R2相对于连结旋转轴部181的旋转中心R0(参照图4)和第1旋转构件204的旋转轴线R1的直线L1倾斜。换言之,第2旋转构件205的旋转轴线R2和施力构件206的弹簧轴线L2相对于直角倾斜。因此,施力构件206的作用力的一部分成为使旋转轴部181向消除旋转轴线R2的倾斜的方向、即在此是绕逆时针旋转的力。该力作为针对旋转轴部181的预压发挥功能。
通过如此对旋转轴部181赋予预压,能够提高由轨道201和滑动件202构成的线性系统的刚性。通过提高线性系统的刚性,实施方式的阻尼机构186针对振动等干扰变得更强,能够进行更精密的定位。
另外,实施方式的阻尼机构186在旋转轴部181的旋转驱动范围内不管旋转位置的变化如何,几乎不产生施力构件206的变形量(伸长量)的变化。因此,能够在旋转定位的任何位置处赋予大致一定的预压。因而,根据实施方式的阻尼机构186,能够避免由所赋予的预压变化导致的定位精度的变动,并且,使静定性提高。
在图5所示的初始状态下,在从铅垂方向观察旋转机构108时,第1旋转构件204的旋转轴线R1配置于比施力构件206的假想的弹簧轴线L2靠旋转轴部181的外方的位置。通过设为该配置,与例如将弹簧轴线L2配置到旋转轴线R1的外侧的情况相比较,能够抑制使除了旋转方向的力以外的多余的力、例如使旋转中心R0移动的力施加于旋转轴部181。因而,根据实施方式的阻尼机构186,能够使第1基板W1的定位精度进一步提高。
阻尼机构186的滑动件202隔着旋转轴部181的中心配置于与驱动部184的滑动件184a相反的一侧(参照图4和图5)。通过将阻尼机构186配置于该位置,能够有效地产生阻尼力。
<接合系统的具体的动作>
接着,参照图6而对接合系统1的具体的动作进行说明。图6是表示实施方式的接合系统1所执行的处理的顺序的流程图。图6所示的各种处理基于控制装置70的控制执行。
首先,收纳有多张第1基板W1的盒C1、收纳有多张第2基板W2的盒C2、以及空的盒C3被载置于送入送出站2的预定的载置板11。之后,利用输送装置22取出盒C1内的第1基板W1,向配置到第3处理块G3的传输装置输送。
接着,第1基板W1由输送装置61向第1处理块G1的表面改性装置30输送。在表面改性装置30中,在预定的减压气氛下,作为处理气体的氧气被激励而等离子体化、并离子化。该氧离子向第1基板W1的接合面照射而对该接合面进行等离子体处理。由此,对第1基板W1的接合面进行改性(步骤S101)。
接着,第1基板W1由输送装置61向第1处理块G1的表面亲水化装置40输送。在表面亲水化装置40中,一边使保持到旋转吸盘的第1基板W1旋转,一边向第1基板W1上供给纯水。由此,使第1基板W1的接合面亲水化。另外,第1基板W1的接合面由该纯水清洗(步骤S102)。
接着,第1基板W1由输送装置61向第2处理块G2的接合装置41输送。输入到接合装置41的第1基板W1借助传输部向位置调节机构输送,水平方向的朝向由位置调节机构调节(步骤S103)。
之后,从位置调节机构向翻转机构交接第1基板W1,第1基板W1的表背面由翻转机构翻转(步骤S104)。具体而言,第1基板W1的接合面W1j被朝向下方。接下来,从翻转机构向第1保持部101交接第1基板W1,第1基板W1由第1保持部101吸附保持(步骤S105)。
之后,进行使用了旋转机构108的第1基板W1的旋转方向的位置调整(步骤S106)。之后,解除由多个空气轴承182引起的旋转轴部181的上浮,而且,使用未图示的排气装置而使旋转轴部181吸附于多个空气轴承182。由此,旋转轴部181以旋转方向的位置调整后的状态固定。
与对第1基板W1进行的步骤S101~S106的处理重叠地进行第2基板W2的处理。首先,利用输送装置22取出盒C2内的第2基板W2,向配置到第3处理块G3的传输装置输送。
接着,第2基板W2由输送装置61向表面改性装置30输送,对第2基板W2的接合面W2j进行改性(步骤S107)。之后,第2基板W2由输送装置61向表面亲水化装置40输送,使第2基板W2的接合面W2j亲水化,并且,该接合面被清洗(步骤S108)。
之后,第2基板W2由输送装置61向接合装置41输送。输入到接合装置41的第2基板W2借助传输部向位置调节机构输送。然后,由位置调节机构调节第2基板W2的水平方向的朝向(步骤S109)。
之后,第2基板W2向第2保持部102输送,以使凹口部朝向预先决定的方向的状态吸附保持于第2保持部102(步骤S110)。
接下来,进行保持到第1保持部101的第1基板W1和保持到第2保持部102的第2基板W2的水平方向的位置调节(步骤S111)。之后,使用升降机构105而使第2基板W2上升,接合第1基板W1和第2基板W2(步骤S112)。此外,也可以是,在步骤S112中,在使第2基板W2上升了之后,使用被设置到第1保持部101的未图示的按压构件而从上方向下方按压第1基板W1的中心部并使第1基板W1的中心部与第2基板W2的中心部接触。
如上述这样,实施方式的基板定位装置(作为一个例子,接合装置41)具备保持部(作为一个例子,第1保持部101)和旋转机构(作为一个例子,旋转机构108)。保持部用于保持基板(作为一个例子,第1基板W1)。旋转机构用于使保持部旋转。另外,旋转机构具备旋转轴部(作为一个例子,旋转轴部181)、轴承部(作为一个例子,空气轴承182)、基座部(作为一个例子,基座部183)、驱动部(作为一个例子,驱动部184)、以及阻尼机构(作为一个例子,阻尼机构186)。旋转轴部固定于保持部。轴承部用于以未接触状态支承旋转轴部。基座部用于固定轴承部。驱动部用于使旋转轴部旋转。阻尼机构包括与基座部连接的轨道(作为一个例子,轨道201)和与旋转轴部连接的滑动件(作为一个例子,滑动件202),该阻尼机构用于利用在轨道与滑动件之间产生的阻力产生针对旋转轴部与基座部之间的相对动作的阻尼力。因而,根据实施方式的基板定位装置,能够使基板的定位精度提高。
阻尼机构具备第1旋转构件(作为一个例子,第1旋转构件204)、第2旋转构件(作为一个例子,第2旋转构件205)、以及施力构件(作为一个例子,施力构件206)。第1旋转构件固定于旋转轴部。第2旋转构件固定于滑动件。施力构件用于对第1旋转构件和第2旋转构件向相互接触的方向施力。
由此,利用能够第1旋转构件和第2旋转构件的旋转运动吸收旋转轴部的旋转运动和滑动件的直线运动的误差,同时机械地连接基座部和旋转轴部。
第1旋转构件能够绕铅垂轴线(作为一个例子,旋转轴线R1)旋转,第2旋转构件能够绕水平轴线(作为一个例子,旋转轴线R2)旋转。另外,在驱动部的驱动力未作用于旋转轴部的初始状态下,在从铅垂方向观察旋转机构时,第2旋转构件的水平轴线相对于连结旋转轴部的旋转中心和第1旋转构件的铅垂轴线的直线(作为一个例子,直线L1)倾斜。
由此,能够对旋转轴部赋予预压。因而,能够提高由轨道和滑动件构成的线性系统的刚性,通过提高线性系统的刚性,针对振动等干扰变得更强,能够进行更精密的定位。
施力构件是弹簧。另外,在驱动部的驱动力未作用于旋转轴部的初始状态下,在从铅垂方向观察旋转机构时,第1旋转构件的铅垂轴线配置于比施力构件的假想的弹簧轴线(作为一个例子,弹簧轴线L2)靠旋转轴部的外方的位置。通过设为该配置,能够使基板的定位精度进一步提高。
阻尼机构隔着旋转轴部的中心配置于与驱动部相反的一侧。通过将阻尼机构配置于该位置,能够有效地产生阻尼力。
应该认为此次所公开的实施方式在全部的点都是例示,并非限制性的。实际上,上述的实施方式能以多样的形态具体化。另外,上述的实施方式也可以在不脱离所附的权利要求书及其主旨的情况下以各种形态进行省略、置换、变更。
Claims (9)
1.一种基板定位装置,其具备:
保持部,其保持基板;和
旋转机构,其使所述保持部旋转,
所述旋转机构具备:
旋转轴部,其固定于所述保持部;
轴承部,其以未接触状态支承所述旋转轴部;
基座部,其固定所述轴承部;
驱动部,其使所述旋转轴部旋转;以及
阻尼机构,其包括与所述基座部连接的轨道和与所述旋转轴部连接的滑动件,该阻尼机构利用在所述轨道与所述滑动件之间产生的阻力产生针对所述旋转轴部与所述基座部之间的相对动作的阻尼力。
2.根据权利要求1所述的基板定位装置,其中,
所述轴承部是空气轴承,向所述旋转轴部的轴支承面喷出压缩空气而使所述旋转轴部上浮,从而所述轴承部以未接触状态支承所述旋转轴部。
3.根据权利要求1或2所述的基板定位装置,其中,
所述轨道是直线状。
4.根据权利要求1或2所述的基板定位装置,其中,
所述阻尼机构具备:
第1旋转构件,其固定到所述旋转轴部;
第2旋转构件,其固定到所述滑动件;以及
施力构件,其对所述第1旋转构件和所述第2旋转构件向相互接触的方向施力。
5.根据权利要求4所述的基板定位装置,其中,
所述第1旋转构件能够绕铅垂轴线旋转,
所述第2旋转构件能够绕水平轴线旋转,
在所述驱动部的驱动力未作用于所述旋转轴部的初始状态下,在从铅垂方向观察所述旋转机构时,所述第2旋转构件的所述水平轴线相对于连结所述旋转轴部的旋转中心和所述第1旋转构件的所述铅垂轴线的直线倾斜。
6.根据权利要求5所述的基板定位装置,其中,
所述施力构件是弹簧,
在所述驱动部的驱动力未作用于所述旋转轴部的初始状态下,在从铅垂方向观察所述旋转机构时,所述第1旋转构件的所述铅垂轴线配置于比所述施力构件的假想的弹簧轴线靠所述旋转轴部的外方的位置。
7.根据权利要求1或2所述的基板定位装置,其中,
所述阻尼机构隔着所述旋转轴部的中心配置于与所述驱动部相反的一侧。
8.一种基板定位方法,其包括如下工序:
使用保持基板的保持部来保持所述基板的工序;和
使用旋转机构进行所述基板的旋转方向上的定位的工序,所述旋转机构使所述保持部旋转,具备:旋转轴部,其固定于所述保持部;轴承部,其以未接触状态支承所述旋转轴部;基座部,其固定所述轴承部;驱动部,其使所述旋转轴部旋转;以及阻尼机构,其包括与所述基座部连接的轨道和与所述旋转轴部连接的滑动件,该阻尼机构利用在所述轨道与所述滑动件之间产生的阻力产生针对所述旋转轴部与所述基座部之间的相对动作的阻尼力。
9.一种接合装置,其具备:
第1保持部,其从上方吸附保持第1基板;
第2保持部,其配置于比所述第1保持部靠下方的位置,从下方吸附保持第2基板;
移动机构,其使所述第1保持部和所述第2保持部中的一者接近另一者;以及
旋转机构,其使所述第1保持部旋转,
所述旋转机构具备:
旋转轴部,其固定于所述第1保持部;
轴承部,其以未接触状态支承所述旋转轴部;
基座部,其固定所述轴承部;
驱动部,其使所述旋转轴部旋转;以及
阻尼机构,其包括与所述基座部连接的轨道和与所述旋转轴部连接的滑动件,该阻尼机构利用在所述轨道与所述滑动件之间产生的阻力产生针对所述旋转轴部与所述基座部之间的相对动作的阻尼力。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-020272 | 2020-02-10 | ||
JP2020020272A JP7370271B2 (ja) | 2020-02-10 | 2020-02-10 | 基板位置決め装置、基板位置決め方法および接合装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113257732A true CN113257732A (zh) | 2021-08-13 |
CN113257732B CN113257732B (zh) | 2025-05-13 |
Family
ID=77177548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110152066.2A Active CN113257732B (zh) | 2020-02-10 | 2021-02-03 | 基板定位装置、基板定位方法以及接合装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11545383B2 (zh) |
JP (1) | JP7370271B2 (zh) |
KR (1) | KR102753334B1 (zh) |
CN (1) | CN113257732B (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139243A (en) * | 1975-12-31 | 1979-02-13 | Logetronics, Inc. | Protective system for a pneumatically actuated rotating body |
JPH11166990A (ja) * | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
JP2005039285A (ja) * | 2004-08-23 | 2005-02-10 | Tadamoto Tamai | 真空処理装置 |
JP2006066589A (ja) * | 2004-08-26 | 2006-03-09 | Nikon Corp | ステージ装置及び露光装置、デバイス製造方法、並びにステージ装置の駆動方法 |
JP2010270852A (ja) * | 2009-05-22 | 2010-12-02 | Oiles Ind Co Ltd | 磁気ダンパーを有するエアスライド装置 |
CN102713759A (zh) * | 2009-09-01 | 2012-10-03 | 麦克罗尼克迈达塔有限责任公司 | 图案产生系统 |
CN103648715A (zh) * | 2011-06-29 | 2014-03-19 | Ntn株式会社 | 静压气体轴承主轴 |
CN207848225U (zh) * | 2017-12-29 | 2018-09-11 | 大族激光科技产业集团股份有限公司 | 机械设备及其工作台 |
CN110744069A (zh) * | 2019-09-12 | 2020-02-04 | 苏州志纳精密科技有限公司 | 一种金刚石刀具的精密切削方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005071717A1 (ja) * | 2004-01-26 | 2005-08-04 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP5672715B2 (ja) * | 2010-02-19 | 2015-02-18 | 株式会社ニコン | 重ね合わせ方法 |
JP6703619B2 (ja) * | 2016-11-09 | 2020-06-03 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法及びコンピュータ記憶媒体 |
JP6895770B2 (ja) | 2017-03-02 | 2021-06-30 | 東京エレクトロン株式会社 | 接合装置および接合システム |
JP6878605B2 (ja) * | 2017-09-13 | 2021-05-26 | キヤノンセミコンダクターエクィップメント株式会社 | 加工装置 |
-
2020
- 2020-02-10 JP JP2020020272A patent/JP7370271B2/ja active Active
-
2021
- 2021-02-01 KR KR1020210014129A patent/KR102753334B1/ko active Active
- 2021-02-02 US US17/164,928 patent/US11545383B2/en active Active
- 2021-02-03 CN CN202110152066.2A patent/CN113257732B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139243A (en) * | 1975-12-31 | 1979-02-13 | Logetronics, Inc. | Protective system for a pneumatically actuated rotating body |
JPH11166990A (ja) * | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
JP2005039285A (ja) * | 2004-08-23 | 2005-02-10 | Tadamoto Tamai | 真空処理装置 |
JP2006066589A (ja) * | 2004-08-26 | 2006-03-09 | Nikon Corp | ステージ装置及び露光装置、デバイス製造方法、並びにステージ装置の駆動方法 |
JP2010270852A (ja) * | 2009-05-22 | 2010-12-02 | Oiles Ind Co Ltd | 磁気ダンパーを有するエアスライド装置 |
CN102713759A (zh) * | 2009-09-01 | 2012-10-03 | 麦克罗尼克迈达塔有限责任公司 | 图案产生系统 |
CN103648715A (zh) * | 2011-06-29 | 2014-03-19 | Ntn株式会社 | 静压气体轴承主轴 |
CN207848225U (zh) * | 2017-12-29 | 2018-09-11 | 大族激光科技产业集团股份有限公司 | 机械设备及其工作台 |
CN110744069A (zh) * | 2019-09-12 | 2020-02-04 | 苏州志纳精密科技有限公司 | 一种金刚石刀具的精密切削方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102753334B1 (ko) | 2025-01-10 |
KR20210102071A (ko) | 2021-08-19 |
JP2021125660A (ja) | 2021-08-30 |
US11545383B2 (en) | 2023-01-03 |
TW202143373A (zh) | 2021-11-16 |
CN113257732B (zh) | 2025-05-13 |
JP7370271B2 (ja) | 2023-10-27 |
US20210249293A1 (en) | 2021-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111566782B (zh) | 基板处理装置和基板处理方法 | |
JP7488062B2 (ja) | 接合装置、接合システム、接合方法および記憶媒体 | |
WO2020226095A1 (ja) | 接合装置、接合システム及び接合方法 | |
WO2020226093A1 (ja) | 接合装置、接合システム及び接合方法 | |
CN111615739B (zh) | 基板处理装置、以及基板处理方法 | |
CN113257732B (zh) | 基板定位装置、基板定位方法以及接合装置 | |
TWI883110B (zh) | 基板定位裝置、基板定位方法及接合裝置 | |
KR20240002701A (ko) | 접합 장치 및 접합 방법 | |
US20240300113A1 (en) | Substrate positioning device, substrate positioning method, and bonding apparatus | |
KR20210141365A (ko) | 접합 장치 및 접합 방법 | |
JP2024147887A (ja) | 接合装置および接合方法 | |
JP7692789B2 (ja) | 直動機構、位置決め機構、接合装置および接合方法 | |
CN118676021A (zh) | 半导体制造装置及半导体装置的制造方法 | |
CN116895562A (zh) | 接合装置、接合系统、接合方法以及存储介质 | |
WO2024247775A1 (ja) | 接合装置、接合システムおよび接合方法 | |
CN120345053A (zh) | 接合装置、接合系统以及接合方法 | |
WO2025057508A1 (ja) | 基板厚み測定装置、基板貼り合わせシステムおよび基板厚み測定方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |