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CN113130625B - A kind of high-voltage fast silicon carbide diode and preparation method thereof - Google Patents

A kind of high-voltage fast silicon carbide diode and preparation method thereof Download PDF

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CN113130625B
CN113130625B CN202110326189.3A CN202110326189A CN113130625B CN 113130625 B CN113130625 B CN 113130625B CN 202110326189 A CN202110326189 A CN 202110326189A CN 113130625 B CN113130625 B CN 113130625B
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silicon carbide
epitaxial layer
layer
silicon
carbide epitaxial
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CN113130625A (en
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刘柏光
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Semtech Semiconductor Technology Dongguan Co Ltd
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Semtech Semiconductor Technology Dongguan Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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Abstract

The invention provides a high-voltage and rapid silicon carbide diode and a preparation method thereof, wherein the silicon carbide diode comprises a plastic package shell, a silicon carbide chip, a cathode pin, an anode pin and a soldering assistant plate, and the silicon carbide chip comprises N+Silicon carbide substrate, N‑Silicon carbide epitaxial layer, cathode metal, silicon dioxide layer, P-type guard ring, N layer covering the silicon dioxide layer‑The anode metal at the upper end of the silicon carbide epitaxial layer is welded with the anode pin, one end of the welding-assistant plate is welded with the cathode pin, and the other end of the welding-assistant plate is welded with the cathode metal. The silicon carbide diode and the preparation method thereof grow the silicon dioxide layer on N+Silicon carbide substrate and N‑The outer side surface of the junction of the silicon carbide epitaxial layers is arranged on the silicon dioxide layer and N‑The anode metal is deposited on the upper end of the silicon carbide epitaxial layer, and in the formed structure, the Schottky barrier area is large, the voltage which can pass through the silicon carbide diode in the forward direction is large, and the conduction speed is high.

Description

High-voltage rapid silicon carbide diode and preparation method thereof
Technical Field
The invention relates to the technical field of Schottky rectifier tubes, in particular to a high-voltage rapid silicon carbide diode and a preparation method thereof.
Background
The silicon carbide material has the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturated electron migration rate, excellent physical and chemical stability and the like, and is suitable for working under high temperature, high frequency, high power and extreme environments, so that part of diodes are made into silicon carbide diodes by using the silicon carbide material to replace the traditional silicon material.
Conventional silicon carbide diodes typically have a silicon dioxide layer disposed on N-Depositing anode metal on the upper end of the silicon carbide epitaxial layer and on the inner side of the silicon dioxide layer to form anode metal and N-The Schottky barrier area formed between the silicon carbide epitaxial layers is small, so that the forward conduction voltage of the silicon carbide diode is low, the conduction speed is low, and the conditions cannot be met in a part of circuits with high voltage and high speed.
Disclosure of Invention
Aiming at the problems, the invention provides a high-voltage and rapid silicon carbide diode and a preparation method thereof, wherein a silicon dioxide layer is grown on N+Silicon carbideSubstrate and N-The outer side surface of the junction of the silicon carbide epitaxial layers is arranged on the silicon dioxide layer and N-The anode metal is deposited on the upper end of the silicon carbide epitaxial layer, and in the formed structure, the Schottky barrier area is large, the voltage which can pass through the silicon carbide diode in the forward direction is large, and the conduction speed is high.
In order to achieve the purpose, the invention is solved by the following technical scheme:
the high-voltage quick silicon carbide diode comprises a silicon carbide diode body, wherein the silicon carbide diode body comprises a plastic package shell, a silicon carbide chip, a cathode pin, an anode pin and a welding assisting plate, and the silicon carbide chip comprises N+A silicon carbide substrate coated with the N+N at the upper end of the silicon carbide substrate-Silicon carbide epitaxial layer covering the N+Cathode metal at lower end of silicon carbide substrate, N+Silicon carbide substrate and N-A silicon dioxide layer on the outer side surface of the junction of the silicon carbide epitaxial layers and positioned on the N+Silicon carbide substrate and N-A P-type guard ring at the inner side of the junction of the silicon carbide epitaxial layer, and N-type guard ring covering the silicon dioxide layer-The anode metal at the upper end of the silicon carbide epitaxial layer is welded with the anode pin, one end of the welding-assistant plate is welded with the cathode pin, and the other end of the welding-assistant plate is welded with the cathode metal.
Specifically, the N is-The corner at the upper end of the silicon carbide epitaxial layer is of an R-corner structure.
Specifically, the anode pin comprises a first conductive part, a first bending part and a first welding part, a groove is formed in the first conductive part, and the anode metal is welded on the inner side of the groove.
Specifically, the cathode pin includes a second conductive portion, a second bent portion, and a second soldering portion, and the second conductive portion is soldered to the soldering assistant plate.
A preparation method of a silicon carbide diode comprises the following steps:
s1 epitaxial growth: in N+Growing a layer of N on the silicon carbide substrate-A silicon carbide epitaxial layer;
s2 grinding: to N-Silicon carbide epitaxyGrinding the upper corner of the layer to obtain N-The upper end corner of the silicon carbide epitaxial layer is of an R-corner structure;
s3: and (3) depositing silicon dioxide: in N+Silicon carbide substrate and N-A silicon dioxide layer is deposited on the outer side surface of the joint of the silicon carbide epitaxial layers;
s4 diffusion of boron: diffusing boron to the upper side of the silicon dioxide layer to make N+Silicon carbide substrate and N-Forming a P-type protection ring at the inner side of the junction of the silicon carbide epitaxial layer;
s5 deposit metal: in the silicon dioxide layer, N-Depositing an anode metal layer on the upper end of the silicon carbide epitaxial layer, and depositing N+Depositing a layer of cathode metal at the lower end of the silicon carbide substrate;
s6 welding: welding the anode metal and the anode pin, welding one end of the welding-assistant plate and the cathode pin, and welding the other end of the welding-assistant plate and the cathode metal;
s7 plastic package: and forming a plastic package shell after gluing, baking, plastic packaging and curing.
Specifically, before the plastic package in step S7, an acid washing step is further performed, where the acid washing step includes: and washing the surface of the silicon carbide chip by using mixed acid, removing impurities adsorbed on the surface of the silicon carbide chip, reducing a surface electric field, washing the silicon carbide chip for three times by using clean water, and drying by using hot air.
Specifically, the mixed acid is a mixed solution of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, and the volume ratio of the nitric acid to the hydrofluoric acid to the acetic acid to the sulfuric acid is as follows: 10:0.2:8:5.
The invention has the beneficial effects that:
1. the invention relates to a high-voltage rapid silicon carbide diode and a preparation method thereof, wherein a silicon dioxide layer is grown on N+Silicon carbide substrate and N-The outer side surface of the junction of the silicon carbide epitaxial layers is arranged on the silicon dioxide layer and N-A layer of anode metal is deposited at the upper end of the silicon carbide epitaxial layer, and in the formed structure, the Schottky barrier area is large, the voltage which can be passed by the silicon carbide diode in the forward direction is large, and the conduction speed is high;
2. in a conventional silicon carbide diode structure, N-The upper corner of the silicon carbide epitaxial layer is of a right-angle structureThere will be a greater electric field strength, N-The corner design of carborundum epitaxial layer upper end becomes R angle structure, can reduce the electric field strength of this position, avoids the schottky barrier local voltage who forms too high, influences the withstand voltage of carborundum diode structure.
Drawings
FIG. 1 is a schematic structural diagram of steps S1-S5 according to the present invention.
FIG. 2 is a schematic structural view of a silicon carbide chip according to the present invention.
Fig. 3 is a schematic structural view of a silicon carbide diode according to the present invention.
The reference signs are: the semiconductor package comprises a plastic package shell 1, a silicon carbide chip 2, an N + silicon carbide substrate 21, an N-silicon carbide epitaxial layer 22, a cathode metal 23, a silicon dioxide layer 24, a P-type guard ring 25, an anode metal 26, a cathode pin 3, a second conductive part 31, a second bent part 32, a second welding part 33, an anode pin 4, a first conductive part 41, a first bent part 42, a first welding part 43 and a welding assisting plate 5.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1-3:
a high-voltage rapid silicon carbide diode comprises a silicon carbide diode, wherein the silicon carbide diode comprises a plastic package shell 1, a silicon carbide chip 2, a cathode pin 3, an anode pin 4 and a welding assisting plate 5, the silicon carbide chip 2 comprises N+Silicon carbide substrate 21 covered with N+N at the upper end of silicon carbide substrate 21-Silicon carbide epitaxial layer 22, covered with N+Cathode metal 23 at lower end of silicon carbide substrate 21, located at N+Silicon carbide substrates 21 and N-A silicon dioxide layer 24 on the outer side of the junction of the silicon carbide epitaxial layers 22 and positioned on N+Silicon carbide substrates 21 and N-P-type guard ring 25 covering silicon dioxide layer 24 and N at the inner side of the junction of silicon carbide epitaxial layer 22-Anode metal 26 on the upper end of the silicon carbide epitaxial layer 22, the anode metal 26 is welded with the anode pin 4, one end of the welding-assistant plate 5 is welded with the cathode pin 3, and the other end is welded with the cathodeThe metal 23 is welded, and a silicon dioxide layer 24 is grown on N+Silicon carbide substrates 21 and N-The silicon carbide epitaxial layer 22 is arranged on the outer side surface of the junction of the silicon carbide epitaxial layer 24 and the silicon dioxide layer N-The anode metal 26 is deposited on the upper end of the silicon carbide epitaxial layer 22, the formed Schottky barrier area is large, the voltage which can pass through the silicon carbide diode during forward conduction is large, and the conduction speed is high.
Preferably, in a conventional silicon carbide diode structure, N-The upper corner of the silicon carbide epitaxial layer 21 is of a right-angle structure, the right-angle position has larger electric field intensity, and the embodiment uses N-The corner design of carborundum epitaxial layer 22 upper end becomes R angle structure, and the radius at R angle is 0.05mm, can reduce the electric field strength at this position, avoids the schottky barrier local voltage who forms too high, influences the withstand voltage of carborundum diode structure.
Preferably, the anode lead 4 includes a first conductive portion 41, a first bent portion 42, and a first soldering portion 43, the first conductive portion 41 is provided with a groove, and the anode metal 26 is soldered inside the groove.
Preferably, the cathode lead 3 includes a second conductive portion 31, a second bent portion 32, and a second soldering portion 33, and the second conductive portion 31 is soldered to the soldering assistant plate 5.
A preparation method of a silicon carbide diode comprises the following steps:
s1 epitaxial growth: preparing an N+ Silicon carbide substrate 21, N+The silicon carbide substrate 21 is arranged in a reaction chamber of an epitaxial growth reaction furnace, and trichlorosilane and C are introduced2H4And a nitrogen source gas for N doping, wherein N is at 800-1200 DEG C+Growing a layer of N on the silicon carbide substrate 21-A silicon carbide epitaxial layer 22;
s2 grinding: will N+ Silicon carbide substrate 21, N-The silicon carbide epitaxial layer 22 is placed in a lapping machine and N is bonded by diamond grains-Grinding the upper corner of the silicon carbide epitaxial layer 22 to make N-The upper end corner of the silicon carbide epitaxial layer 22 is of an R-corner structure;
s3: and (3) depositing silicon dioxide: by chemical vapor deposition on N+ Silicon carbide substrates 21 and N-Outside the junction of the silicon carbide epitaxial layers 22Depositing a silicon dioxide layer on the side surface;
s4 diffusion of boron: diffusing boron to the upper side position of the silicon dioxide layer 24 by utilizing liquid trimethyl borate to enable N+ Silicon carbide substrates 21 and N-A P-shaped protection ring 25 with the depth of 0.1-0.3 mm is formed on the inner side of the joint of the silicon carbide epitaxial layer 22;
s5 deposit metal: by electrodeposition of copper on the silicon dioxide layer 24, N-Depositing an anode metal layer 26 on the upper end of the silicon carbide epitaxial layer 22, and forming a layer of N+Depositing a layer of cathode metal 23 at the lower end of the silicon carbide substrate 21;
s6 welding: welding the anode metal 26 with the anode pin 4, welding one end of the welding-assistant plate 5 with the cathode pin 3, and welding the other end with the cathode metal 23;
s7 plastic package: and gluing, baking, plastic packaging and curing to form the plastic packaging shell 1.
Preferably, before the plastic package in step S7, an acid washing step is further performed, where the acid washing step includes: and washing the surface of the silicon carbide chip 2 by using mixed acid, removing impurities adsorbed on the surface of the silicon carbide chip 2, reducing the surface electric field, washing the silicon carbide chip 2 for three times by using clear water, and drying by using hot air.
Preferably, the mixed acid is a mixed solution of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, and the volume ratio of the nitric acid to the hydrofluoric acid to the acetic acid to the sulfuric acid is as follows: 10:0.2:8:5.
The above examples only show 1 embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (6)

1.一种高压快速的碳化硅二极管，包括碳化硅二极管，其特征在于，所述碳化硅二极管包括塑封外壳（1）、碳化硅芯片（2）、阴极引脚（3）、阳极引脚（4）、助焊板（5），所述碳化硅芯片（2）包括N+碳化硅衬底（21）、覆盖在所述N+碳化硅衬底（21）上端的N-碳化硅外延层（22）、覆盖在所述N+碳化硅衬底（21）下端的阴极金属（23）、位于所述N+碳化硅衬底（21）与N-碳化硅外延层（22）交接处外侧面的二氧化硅层（24）、形成于所述N-碳化硅外延层（22）的边缘并位于所述二氧化硅层（24）上端一侧的P型保护环（25）、覆盖在所述二氧化硅层（24）、N-碳化硅外延层（22）上端的阳极金属（26），所述N-碳化硅外延层（22）的上端面、外侧面与所述阳极金属（26）的交界处均形成肖特基势垒，所述二氧化硅层（24）上端面的水平高度低于所述N-碳化硅外延层（22）上端面的水平高度，所述阳极金属（26）与所述阳极引脚（4）焊接，所述助焊板（5）一端与所述阴极引脚（3）焊接，另一端与所述阴极金属（23）焊接，所述N-碳化硅外延层（22）上端边角为R角结构。1. A high-voltage fast silicon carbide diode, comprising a silicon carbide diode, characterized in that the silicon carbide diode comprises a plastic-encapsulated casing (1), a silicon carbide chip (2), a cathode lead (3), an anode lead ( 4) A soldering flux plate (5), the silicon carbide chip (2) comprises an N + silicon carbide substrate (21), an N- silicon carbide epitaxial layer covering the upper end of the N + silicon carbide substrate (21) (22), a cathode metal (23) covering the lower end of the N + silicon carbide substrate (21), located outside the junction of the N + silicon carbide substrate (21) and the N- silicon carbide epitaxial layer (22) A silicon dioxide layer (24) on the side, a P-type guard ring (25) formed on the edge of the N - silicon carbide epitaxial layer (22) and located on the upper end side of the silicon dioxide layer (24), covering the The silicon dioxide layer (24), the anode metal (26) at the upper end of the N - silicon carbide epitaxial layer (22), the upper end face and the outer side of the N-silicon carbide epitaxial layer (22) and the anode metal (22). A Schottky barrier is formed at the junction of 26), the level of the upper end face of the silicon dioxide layer (24) is lower than the level of the upper end face of the N - silicon carbide epitaxial layer (22), and the anode metal (26) is welded with the anode pin (4), one end of the flux plate (5) is welded with the cathode pin (3), and the other end is welded with the cathode metal (23) , the N- The upper edge and corner of the silicon carbide epitaxial layer (22) is an R-angle structure. 2.根据权利要求1所述的一种高压快速的碳化硅二极管，其特征在于，所述阳极引脚（4）包括第一导电部（41）、第一弯折部（42）、第一焊接部（43），所述第一导电部（41）上设有凹槽，所述阳极金属（26）焊接在所述凹槽内侧。2. The high-voltage fast silicon carbide diode according to claim 1, wherein the anode pin (4) comprises a first conductive part (41), a first bending part (42), a first The welding part (43) is provided with a groove on the first conductive part (41), and the anode metal (26) is welded inside the groove. 3.根据权利要求1所述的一种高压快速的碳化硅二极管，其特征在于，所述阴极引脚（3）包括第二导电部（31）、第二弯折部（32）、第二焊接部（33），所述第二导电部（31）与所述助焊板（5）焊接。3. The high-voltage fast silicon carbide diode according to claim 1, wherein the cathode lead (3) comprises a second conductive part (31), a second bending part (32), a second A welding part (33), the second conductive part (31) is welded with the soldering flux plate (5). 4.一种如权利要求1~3任一项所述的碳化硅二极管的制备方法，其特征在于，包括以下步骤：4. A method for preparing a silicon carbide diode as claimed in any one of claims 1 to 3, wherein the method comprises the following steps: S1外延生长：在N+碳化硅衬底（21）上生长一层N-碳化硅外延层（22）；S1 epitaxial growth: growing an N- silicon carbide epitaxial layer (22 ) on the N + silicon carbide substrate (21); S2研磨：对N-碳化硅外延层（22）上端边角进行研磨，使N-碳化硅外延层（22）上端边角呈R角结构；S2 grinding: grinding the upper end corners of the N - silicon carbide epitaxial layer (22), so that the upper end corners of the N - silicon carbide epitaxial layer (22) have an R-angle structure; S3：沉积二氧化硅：在N+碳化硅衬底（21）与N-碳化硅外延层（22）交接处外侧面沉积一层二氧化硅层（24），所述二氧化硅层（24）上端面的水平高度低于所述N-碳化硅外延层（22）上端面的水平高度；S3: depositing silicon dioxide: depositing a silicon dioxide layer (24) on the outer side of the junction of the N + silicon carbide substrate (21) and the N- silicon carbide epitaxial layer (22), the silicon dioxide layer (24) ) the level of the upper end surface is lower than the level of the upper end surface of the N - silicon carbide epitaxial layer (22); S4扩散硼：对二氧化硅层（24）上端一侧扩散硼，使N-碳化硅外延层（22）的边缘形成P型保护环（25）；S4 diffusion of boron: boron is diffused on the upper end side of the silicon dioxide layer (24), so that a P-type protection ring (25) is formed on the edge of the N-silicon carbide epitaxial layer (22); S5沉积金属：在二氧化硅层（24）、N-碳化硅外延层（22）上端沉积一层阳极金属（26），阳极金属（26）与N-碳化硅外延层（22）之间形成肖特基势垒，在N+碳化硅衬底（21）下端沉积一层阴极金属（23）；S5 depositing metal: depositing a layer of anode metal (26) on the upper end of the silicon dioxide layer (24) and the N - silicon carbide epitaxial layer (22), forming a layer between the anode metal (26) and the N - silicon carbide epitaxial layer (22) Schottky barrier, depositing a layer of cathode metal (23) on the lower end of the N + silicon carbide substrate (21); S6焊接：将阳极金属（26）与阳极引脚（4）焊接，将助焊板（5）一端与阴极引脚（3）焊接，另一端与阴极金属（23）焊接；S6 welding: Weld the anode metal (26) with the anode pin (4), weld one end of the flux plate (5) with the cathode pin (3), and weld the other end with the cathode metal (23); S7塑封：经过上胶、烘烤、塑封、固化后形成塑封外壳（1）。S7 plastic sealing: After gluing, baking, plastic sealing and curing, the plastic casing (1) is formed. 5.根据权利要求4所述的一种碳化硅二极管的制备方法，其特征在于，步骤S7塑封前，还经过酸洗步骤，酸洗步骤包括：利用混合酸冲洗碳化硅芯片（2）表面，去除碳化硅芯片（2）表面吸附的杂质，并降低表面电场，再用清水对碳化硅芯片（2）冲洗三遍，热风烘干后即可。5 . The preparation method of a silicon carbide diode according to claim 4 , characterized in that, before the plastic sealing in step S7 , a pickling step is also carried out, and the pickling step comprises: washing the surface of the silicon carbide chip ( 2 ) with mixed acid, 6 . Remove the impurities adsorbed on the surface of the silicon carbide chip (2) and reduce the surface electric field, then rinse the silicon carbide chip (2) with clean water three times, and then dry it with hot air. 6.根据权利要求5所述的一种碳化硅二极管的制备方法，其特征在于，所述混合酸为硝酸、氢氟酸、醋酸、硫酸的混合液，硝酸、氢氟酸、醋酸、硫酸的体积比为：10:0.2:8:5。6 . The method for preparing a silicon carbide diode according to claim 5 , wherein the mixed acid is a mixed solution of nitric acid, hydrofluoric acid, acetic acid, and sulfuric acid, and a mixture of nitric acid, hydrofluoric acid, acetic acid, and sulfuric acid The volume ratio is: 10:0.2:8:5.
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