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CN113093469B - Method for target pattern correction, mask production and semiconductor structure formation - Google Patents

Method for target pattern correction, mask production and semiconductor structure formation Download PDF

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Publication number
CN113093469B
CN113093469B CN202010020264.9A CN202010020264A CN113093469B CN 113093469 B CN113093469 B CN 113093469B CN 202010020264 A CN202010020264 A CN 202010020264A CN 113093469 B CN113093469 B CN 113093469B
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edge
pattern
compensated
etching
target
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CN113093469A (en
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王占雨
舒强
覃柳莎
张迎春
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

一种目标图形的修正方法、掩膜版的制作方法以及半导体结构的形成方法，其中目标图形的修正方法包括：提供目标图形，且所述目标图形沿第一方向延伸；将所述目标图形划分为一个第一中心区以及分别位于所述第一中心区两侧的两个第一边缘区；将各所述第一边缘区的目标图形的边缘分割为若干待补偿边；获取刻蚀偏移模型；根据刻蚀偏移模型对每个待补偿边分别进行第一补偿修正，得到第一补偿边。所述方法有利于提高蚀刻后得到的图形尺寸的均一性。

A method for correcting a target pattern, a method for making a mask, and a method for forming a semiconductor structure, wherein the method for correcting a target pattern comprises: providing a target pattern, wherein the target pattern extends along a first direction; dividing the target pattern into a first central area and two first edge areas located on both sides of the first central area; dividing the edge of the target pattern in each of the first edge areas into a plurality of edges to be compensated; obtaining an etching offset model; and performing a first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge. The method is conducive to improving the uniformity of the size of the pattern obtained after etching.

Description

Method for correcting target pattern, manufacturing mask and forming semiconductor structure
Technical Field
The invention relates to the field of semiconductor manufacturing processes, in particular to a method for correcting a target pattern, manufacturing a mask plate and forming a semiconductor structure.
Background
Currently, with the development of very large scale integrated circuits, the design size of the device is smaller and smaller, and the change of the critical dimension (CD, critical Dimension) of the device has more and more influence on the performance of the device, for example, the change of the critical dimension of the gate structure directly causes the change of the operation speed of the device.
Photolithography is a critical technique in semiconductor fabrication that enables transferring patterns from a reticle to a wafer surface to form a semiconductor product that meets design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light irradiates the silicon wafer coated with the photoresist through a light-transmitting area in the mask, the photoresist is subjected to chemical reaction under the irradiation of the light, in the development step, a photoetching pattern is formed by utilizing the difference of the dissolution degree of the photosensitive photoresist and the non-photosensitive photoresist to the developer, the mask pattern is transferred to the photoresist, and in the etching step, the silicon wafer is etched based on the photoetching pattern formed by the photoresist layer, and the pattern of the mask is further transferred to the silicon wafer.
The size of the specific pattern dimensions after lithography is characterized by ADI (After Develop Inspection) CD (Critical Dimension), the AEI (AFTER ETCH inspection) CD is the size of the device dimensions after etching. The difference between ADI CD and AEI CD was calculated to give an Etching Bias (Etching Bias).
However, in the prior art, the target pattern is corrected by etching deviation to obtain a mask pattern, and then the mask pattern is transferred to a silicon wafer to obtain a pattern with inconsistent feature sizes at both ends and the center.
Disclosure of Invention
The invention solves the technical problem of providing a method for correcting a target pattern, manufacturing a mask plate and forming a semiconductor structure so as to improve the uniformity of the size of the pattern obtained after etching.
In order to solve the technical problems, the technical scheme of the invention provides a target graph correction method, which comprises the steps of providing a target graph, enabling the target graph to extend along a first direction, dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated, obtaining an etching offset model, and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge.
Optionally, when the size of the target graph along the first direction is larger than a preset value, the method for dividing the target graph into a first central area and two first edge areas comprises the steps of acquiring the size l long of the target graph along the first direction, acquiring the first central area in the target graph, wherein the size l 1 and l 1 of the first central area along the first direction are larger than or equal to a minimum segmentation value l min, and acquiring the first edge area in the target graph, wherein the size l 0 of the first edge area along the first direction is l 0＝(llong-l1)/2.
Optionally, the method for dividing the edge of each first edge region target graph into a plurality of edges to be compensated includes dividing the edge of each first edge region target graph into N edges to be compensated along a first direction, wherein N is an integer value of l long/lmin, and obtaining first edges to be compensated from the plurality of edges to be compensated, wherein the first edges to be compensated are edges to be compensated which are farthest from a first central region in the first direction, the sizes of the first edges to be compensated are l 0-(N-1)lmin, and the sizes of (N-1) edges to be compensated except the first edges to be compensated are the minimum division value l min.
Optionally, the etching offset model comprises a first correction model and a second correction model, the method for obtaining the etching offset model comprises the steps of providing a second test pattern, taking the second test pattern as a mask, carrying out an exposure process, a development process and an etching process to obtain a second etching pattern, dividing the second etching pattern into a second central region and two second edge regions which are respectively positioned at two sides of the first central region, wherein the size of the second edge region is l 0, dividing each second edge region into a plurality of divided patterns along a first direction, dividing the divided pattern farthest from the second central region into a first divided pattern, measuring the size l 0-(N-1)lmin of the first divided pattern along the first direction, measuring the size CD AEI_end of the first divided pattern, obtaining CD AEI, obtaining the first correction model according to CD AEI_end and CD AEI,
f(1)=CDAEI_end-CDAEI;
Obtaining a second correction model according to the first correction model f (1),
And x is more than or equal to 2 and less than or equal to N, N is a natural number greater than or equal to 2.
Optionally, the first compensation correction method comprises the steps of carrying out compensation correction on a first edge to be compensated of each first edge zone according to a first correction model, and carrying out compensation correction on an x-th section of the first edge zone according to a second correction model, wherein x is more than or equal to 2 and less than or equal to N, and N is a natural number which is more than or equal to 2.
Optionally, when the size of the target graph along the first direction is smaller than a preset value, the method for dividing the target graph into a first central area and two first edge areas comprises the steps of acquiring the size l short of the target graph along the first direction, acquiring the first central area in the target graph, wherein the size l 3 and l 3 of the first central area along the first direction are equal to a minimum segmentation value l min, and acquiring the first edge area in the target graph, wherein the size l 2 and l 2＝(lshort-l3/2 of the first edge area along the first direction are met.
Optionally, the method for dividing the edge of the target graph in each first edge region into a plurality of edges to be compensated includes dividing the edge of the target graph in each first edge region into N edges to be compensated along a first direction, wherein N is an integer value of l short/lmin, and obtaining first edges to be compensated from the plurality of edges to be compensated, wherein the first edges to be compensated are edges to be compensated which are farthest from a first central region in the first direction, the first edges to be compensated are l 2-(N-1)lmin, and the sizes of the (N-1) edges to be compensated except the first edges to be compensated are the minimum division value l min.
Optionally, the etching offset model comprises a third correction model, a fourth correction model and a fifth correction model, the method for obtaining the etching offset model comprises the steps of providing a third test pattern, taking the third test pattern as a mask, carrying out an exposure process, a development process and an etching process to obtain a third etching pattern, dividing the third etching pattern into a third central area and two third edge areas which are positioned at two sides of the third central area, wherein the size of the third edge area is l 2, dividing each third etching pattern into a plurality of divided patterns, dividing the most distant divided pattern from the third central area into a first divided pattern in the plurality of divided patterns, measuring the size l 2-(N-1)lmin of the first divided pattern along the first direction, measuring the size CD AEI_short of the third etching pattern of the third central area, obtaining CD AEI, obtaining the modified pattern according to CD AEI_end_short, CD AEI_short and CD AEI,
f(0)=CDAEI_short-CDAEI;
Obtaining a fourth correction model as f (1) =cd AEI_end_short-CDAEI_short +f (0) according to the third correction model;
obtaining a fifth correction model according to the third correction model and the fourth correction model as
And x is more than or equal to 2 and less than or equal to N, N is a natural number greater than or equal to 2.
Optionally, the first compensation correction further comprises compensation correction of edges of the target patterns of the first central area, the second compensation correction method comprises compensation correction of edges of the target patterns of the first central area according to a third correction model, compensation correction of first edges to be compensated of each first edge area according to a fourth correction model, compensation correction of the x-th section edges to be compensated of each first edge area according to a fifth correction model, and x is more than or equal to 2 and less than or equal to N, wherein N is a natural number greater than or equal to 2.
Optionally, the method for obtaining the CD AEI includes providing a first test pattern, taking a mask plate manufactured by the first test pattern as a mask, performing an exposure process and a development process to obtain a first photoetching pattern, taking the first photoetching pattern as the mask, performing an etching process to obtain a first etching pattern, and measuring to obtain a second feature size CD AEI of the first etching pattern.
Optionally, the method further comprises the steps of measuring a first feature size CD ADI of the first photoetching pattern, obtaining a target pattern, measuring a first feature size CD ADI of the first photoetching pattern, obtaining a compensation value delta CD etching bias＝CDADI-CDAEI according to a difference value between the first feature size CD ADI and a second feature size CD AEI, providing an initial target pattern, and carrying out second compensation correction on the initial target pattern according to the compensation value delta CD etching bias to obtain the target pattern.
Optionally, the method for obtaining the CD AEI includes providing a first test pattern, taking a mask plate manufactured by the first test pattern as a mask, performing an exposure process and a development process to obtain a first photoetching pattern, taking the first photoetching pattern as the mask, performing an etching process to obtain a first etching pattern, and measuring to obtain a second feature size CD AEI of the first etching pattern.
Optionally, the method further comprises the steps of measuring a first feature size CD ADI of the first photoetching pattern, obtaining a target pattern, measuring a first feature size CD ADI of the first photoetching pattern, obtaining a compensation value delta CD etching bias＝CDADI-CDAEI according to a difference value between the first feature size CD ADI and a second feature size CD AEI, providing an initial target pattern, and carrying out second compensation correction on the initial target pattern according to the compensation value delta CD etching bias to obtain the target pattern.
Optionally, the preset value ranges from 700nm to 1500 nm.
Correspondingly, the technical scheme of the invention also provides a manufacturing method of the mask, which comprises the steps of providing a target pattern, enabling the target pattern to extend along a first direction, dividing the target pattern into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, dividing the edge of the target pattern of each first edge area into a plurality of edges to be compensated, obtaining an etching offset model, respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge, and manufacturing the mask by using the first compensation edges.
Correspondingly, the technical scheme of the invention also provides a method for forming the semiconductor structure, which comprises the steps of providing a substrate, forming photoresist on the surface of the substrate, providing a mask, wherein the mask is formed by providing a target pattern, extending the target pattern along a first direction, dividing the target pattern into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, dividing the edge of the target pattern of each first edge area into a plurality of edges to be compensated, obtaining an etching offset model, respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge, manufacturing the mask by taking the first compensation edge, exposing the photoresist by taking the mask as a mask to form a patterned layer, and etching the substrate by taking the patterned layer as a mask.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
In the target graph correction method provided by the technical scheme of the invention, each edge to be compensated is subjected to first compensation correction according to the etching offset model, so that a first compensation edge is obtained. The etching offset model can compensate for etching load effect (etching loading effect) caused by inconsistent pattern density, so that uniformity of sizes of etching patterns formed by subsequent etching processes, namely uniformity of sizes of a first central area and a first edge area of the etching patterns, is facilitated.
Further, the target pattern is obtained by performing a second compensation correction on the initial target pattern. The second compensation correction can reduce errors caused by etching deviation in the process of transferring the photoetching pattern to the substrate, and is beneficial to improving the accuracy of pattern transfer.
Drawings
FIGS. 1 to 2 are schematic structural views showing steps of a method for correcting a target pattern;
FIG. 3 is a flow chart of a method for correcting a target pattern according to an embodiment of the invention;
FIGS. 4 to 8 are schematic structural diagrams illustrating steps of a method for correcting a target pattern according to an embodiment of the present invention;
Fig. 9 to 13 are schematic structural diagrams of steps of a method for correcting a target pattern according to another embodiment of the present invention.
Detailed Description
As described in the background art, the existing target pattern correction method is adopted for photoetching, and the formed pattern has poor size uniformity.
Fig. 1 to 2 are schematic structural diagrams of steps of a method for correcting a target pattern.
Referring to fig. 1, a target pattern 100 is provided.
Referring to fig. 2, the target pattern 100 is compensated and corrected according to the etching deviation to obtain a compensated pattern 110, wherein the etching deviation has a calculation formula as follows:
ΔCDetching bias＝CDADI-CDAEI
In the above method, the CD ADI refers to the feature size of the obtained lithographic pattern after performing the exposure process and the development process on the target pattern 100 that is not compensated and corrected. The CD AEI refers to the feature size of the etched pattern obtained after the etching process is performed on the target pattern 100 that is not compensated and corrected. By the calculation formula of the etching deviation:
ΔCDetching bias＝CDADI-CDAEI;
and compensating and correcting the target pattern 100 according to the delta CD etching bias to obtain a compensation pattern 110, so that errors caused in the subsequent etching process can be reduced, and the etching pattern obtained after the exposure process, the development process and the etching process are performed by using the compensation pattern 110 can be close to the target pattern.
However, the etching process is susceptible to pattern sparseness. The pattern density difference at the end of the target pattern 100 is large, and the etching load effect (etch loading effect) is easily generated, resulting in a large difference in the dimensions of the end and the center of the formed etching pattern. Since Δcd etching bias obtained by the calculation formula of the etching deviation is single, the compensation correction performed on the target pattern 100 is also single, and the more accurate compensation correction cannot be performed on each specific position in the target pattern 100, so that the uniformity of the dimension of the obtained etching pattern is still poor.
In order to solve the technical problems, the embodiment of the invention provides a target graph correction method, which comprises the steps of providing a target graph, enabling the target graph to extend along a first direction, dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated, obtaining an etching offset model, and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge. The correction method of the target pattern is beneficial to uniformity of etching pattern size formed by the subsequent etching process.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 3, fig. 3 is a flowchart of a method for correcting a target pattern according to an embodiment of the invention, including:
step S01, providing a target graph, wherein the target graph extends along a first direction;
Step S02, dividing the target graph into a first central area and two first edge areas respectively positioned at two sides of the first central area;
s03, dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated;
Step S04, obtaining an etching offset model;
and S05, respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge.
And respectively carrying out first compensation correction on each side to be compensated according to the etching offset model to obtain a first compensation side. The etching offset model can compensate for etching load effect (etching loading effect) caused by inconsistent pattern density, so that uniformity of etching pattern size formed by the subsequent etching process, namely uniformity of size of a first central area and size of a first edge area of the etching pattern, is facilitated. The following is a detailed description with reference to the accompanying drawings.
Fig. 4 to 8 are schematic structural diagrams of steps of a method for correcting a target pattern according to an embodiment of the present invention.
Referring to fig. 4, a target pattern 200 is provided, and the target pattern 200 extends along a first direction X.
In this embodiment, the dimension of the target pattern 200 along the first direction X is 1600 nm.
The target pattern 200 is a pattern designed for a photoresist layer.
In this embodiment, the method for obtaining the target graph 200 includes providing an initial target graph, and performing a second compensation correction on the initial target graph according to the compensation value Δcd etching bias to obtain the target graph 200.
The method for obtaining the compensation value delta CD etching bias comprises the steps of providing a first test pattern, taking a mask plate manufactured by the first test pattern as a mask, carrying out an exposure process and a development process to obtain a first photoetching pattern, carrying out an etching process to obtain a first etching pattern by taking the first photoetching pattern as the mask, measuring to obtain a second feature size CD AEI of the first etching pattern, measuring to obtain a first feature size CD ADI of the first photoetching pattern, and obtaining the compensation value delta CD etching bias＝CDADI-CDAEI according to the difference value between the first feature size CD ADI and the second feature size CD AEI.
The target pattern 200 is obtained by performing a second compensation correction on the initial target pattern. The second compensation correction can reduce errors caused by etching deviation in the process of transferring the photoetching pattern to the substrate, and is beneficial to improving the accuracy of pattern transfer.
It should be noted that the first test pattern for obtaining the compensation value Δcd etching bias, the first feature size CD ADI, and the second feature size CD AEI needs to satisfy that the size in the first direction X is larger than a preset value.
In this embodiment, the target pattern 200 is elongated. In other embodiments, the target graphic may also be square.
In this embodiment, the number of the target graphics 200 is three. In other embodiments, the number of target graphics is one or more.
Referring to fig. 5, the target pattern 200 is divided into a first central area A1 and two first edge areas B1 respectively located at two sides of the first central area A1.
The method for dividing the target graph 200 into a first central area A1 and two first edge areas B1 comprises the steps of obtaining the dimension l long of the target graph 200 in the first direction X, obtaining the first central area A1 in the target graph 200, wherein the dimension l 1 of the first central area A1 in the first direction is equal to or greater than a minimum segmentation value l min, obtaining the first edge area B1 in the target graph 200, and the dimension l 0 of the first edge area B1 in the first direction X is equal to or greater than l 0＝(llong-l1)/2.
Referring to fig. 6, fig. 6 is a partial enlarged view of a first edge area B1 of the target pattern 200 in fig. 5, and the edge of the target pattern 200 in each first edge area B1 is divided into a plurality of edges 210 to be compensated.
The method for dividing the edge of each first edge area B1 target graph 200 into a plurality of edges to be compensated 210 comprises the steps of dividing the edge of each first edge area B1 target graph 200 into N edges to be compensated 210 along a first direction X, wherein N is an integer value of l long/lmin, obtaining a first edge to be compensated 211 in the plurality of edges to be compensated 210, wherein the first edge to be compensated 211 is the edge to be compensated 210 farthest from a first central area A1 along the first direction X, the size of the first edge to be compensated 211 is l 0-(N-1)lmin, and the sizes of the (N-1) edges to be compensated 210 except the first edge to be compensated 211 are all minimum division values l min.
It should be noted that the magnitude of the l min value is related to the resolution of the existing photolithography process.
Referring to fig. 7, an etch bias model is obtained.
The preset value ranges from 700 nanometers to 1500 nanometers.
The preset value and the size of the target pattern 200, the distance between adjacent target patterns 200, and the correlation between the target pattern 200 and the surrounding patterns are set so that the preset value is different when different target patterns are designed.
In this embodiment, the preset value is set to 800nm, and the dimension of the target pattern 200 in the first direction X is 1600 nm.
The size of the target pattern 200 is larger than a preset value, the etching offset model comprises a first correction model and a second correction model, the method for obtaining the etching offset model comprises the steps of providing a second test pattern (not shown in the figure), taking the second test pattern as a mask, performing an exposure process, a development process and an etching process to obtain a second etching pattern, dividing the second etching pattern into a second central area A2 and two second edge areas B2 which are respectively positioned at two sides of the second central area A2, wherein the size of the second edge area B2 is l 0, dividing each second edge area B2 into a plurality of divided patterns 320 along a first direction X, wherein among the plurality of divided patterns 320, the divided pattern 320 farthest from the second central area B2 is a first divided pattern 321, the first divided pattern 321 is measured along the size l 0-(N-1)lmin of the first direction X, the second etched pattern is divided into a second central area A2, the two second edge areas B2 are respectively positioned at two sides of the second central area A2, the second edge areas B2 are respectively divided into a plurality of divided patterns 320, the size of the second edge areas B2 is divided into a plurality of divided patterns 320, the first divided patterns 321 is the size l 0-(N-1)lmin, the first divided patterns 321 is the size of the first divided patterns 321, the first divided patterns 321 is the size of the first divided patterns along the first direction X, the first direction X is the size CD AEI, the CD is obtained by CD AEI, and the CD is obtained by the CD 35 model is obtained according to the CD AEI,
f(1)=CDAEI_end-CDAEI;
Obtaining a second correction model according to the first correction model f (1),
And x is more than or equal to 2 and less than or equal to N, N is a natural number greater than or equal to 2.
The second correction model is obtained by performing linear simulation on the feature sizes of the plurality of division patterns 320, for example, the size CD AEI_end of the first division pattern 321 and the feature size of the second division pattern, and the feature size of the x-th division pattern, where x is greater than or equal to 2 and less than or equal to N is a natural number greater than or equal to 2.
In this embodiment, the CD AEI is obtained by measuring the first etching pattern when the dimension of the first test pattern along the first direction X is greater than a preset value.
In other embodiments, the CD AEI may also be derived for measuring a feature size of the second etched pattern.
Referring to fig. 8, fig. 8 is a schematic structural diagram of fig. 6, and each of the sides 210 to be compensated is respectively subjected to a first compensation correction according to the etching offset model to obtain a first compensation side 250.
The etching offset model comprises a first correction model and a second correction model, wherein the first compensation correction method comprises the steps of carrying out compensation correction on a first edge to be compensated 211 of each first edge zone B1 according to the first correction model, and carrying out compensation correction on an x-th section to be compensated 210 of the first edge zone B1 according to the second correction model, wherein x is more than or equal to 2 and less than or equal to N, and N is a natural number which is more than or equal to 2.
Specifically, when the to-be-compensated edge 210 is the first to-be-compensated edge 211, according to the first correction model,
f(1)=CDAEI_end–CDAEI
The obtained compensation value moves the first compensation edge 211 by a distance of half the compensation value in a direction perpendicular to the first direction X and reducing the etching deviation.
When the to-be-compensated edge 210 is the to-be-compensated edge 210 other than the first to-be-compensated edge 211, according to the second correction model,
And X is more than or equal to 2 and less than or equal to N, N is a natural number which is more than or equal to 2, and the obtained compensation value enables (N-1) sides to be compensated 210, namely a second side to be compensated, a third side to be compensated, an X-th side to be compensated and an N-th side to be compensated to move by a distance which is half of the compensation value along a direction which is perpendicular to the first direction X and reduces etching deviation.
Specifically, when the to-be-compensated edge 210 is the second to-be-compensated edge, x=2 is passed through the second correction model to obtain a compensation value f (2) of the second to-be-compensated edge.
In this embodiment, the edge to be compensated 210 is shifted by a distance of half the compensation value in a direction approaching the central axis of the target pattern 200.
And respectively carrying out first compensation correction on each edge 210 to be compensated according to the etching offset model to obtain a first compensation edge 250. The etching offset model can compensate for etching load effect (etching loading effect) caused by inconsistent pattern density, so that uniformity of sizes of etching patterns formed by a subsequent etching process, namely uniformity of sizes of a first central area A1 and a first edge area B1 of the etching patterns, is facilitated.
Fig. 9 to 13 are schematic structural diagrams of steps of a method for correcting a target pattern according to another embodiment of the present invention, and the difference between the present embodiment and the above embodiment is that the dimensions of the target pattern along the first direction are different, so that the etching compensation model for the target pattern is different.
Referring to fig. 9, a target pattern 400 is provided, and the target pattern 400 extends along a first direction X.
In this embodiment, the dimension of the target pattern 400 along the first direction X is 500nm.
The target pattern 400 is a pattern designed for a photoresist layer.
The target pattern 400 is the same as the target pattern 200 in the above embodiment, and will not be described herein.
In this embodiment, the dimension of the target pattern 400 along the first direction X is 500 nm.
In this embodiment, the dimension of the target pattern 400 in the first direction X is smaller than a preset value.
Referring to fig. 10, the target graph 400 is divided into a first central area A1 and two first edge areas B1 respectively located at two sides of the first central area A1.
The method for dividing the target pattern 400 into one first central area A1 and two first edge areas B1 comprises the steps of obtaining the dimension l short of the target pattern 400 in the first direction, obtaining the first central area A1 in the target pattern 400, wherein the dimension l 3 of the first central area A1 in the first direction X is equal to a minimum division value l min, obtaining the first edge area B1 in the target pattern 400, and the dimension l 2 of the first edge area B1 in the first direction X is equal to l 2＝(lshort-l3)/2.
Referring to fig. 11, fig. 11 is a partial enlarged view of a first edge area B1 of the target pattern 400 in fig. 10, and the edge of the target pattern 400 in each first edge area B1 is divided into a plurality of edges 410 to be compensated.
The method for dividing the edge of the target graph 400 of each first edge area B1 into a plurality of edges 410 to be compensated comprises the steps of dividing the edge of the target graph 400 of each first edge area B1 into N edges 410 to be compensated along a first direction X, wherein N is an integer value of l short/lmin, acquiring a first edge 411 to be compensated from the plurality of edges 410 to be compensated, wherein the first edge 411 to be compensated is the edge 410 farthest from a first central area A1 along the first direction X, the size of the first edge 411 to be compensated is l 2-(N-1)lmin, and the sizes of the (N-1) edges 410 to be compensated except the first edge 411 to be compensated are all minimum division values l min.
It should be noted that the magnitude of the l min value is related to the resolution of the existing photolithography process.
Referring to fig. 12, an etch bias model is obtained.
The preset value ranges from 700 nanometers to 1500 nanometers.
In this embodiment, the preset value is set to 800 nm, and the dimension of the target pattern 400 in the first direction X is 500 nm.
The dimension of the target pattern 400 along the first direction X is smaller than a preset value, the etching offset model comprises a third correction model, a fourth correction model and a fifth correction model, the method for obtaining the etching offset model comprises the steps of providing a third test pattern (not shown in the figure), taking the third test pattern as a mask, performing an exposure process, a development process and an etching process, obtaining a third etching pattern, dividing the third etching pattern into a third central area A3 and two third edge areas B3 positioned on two sides of the third central area A3, and the dimension of the third edge area B3 is l 2, dividing each third etching pattern into a plurality of divided patterns 520, wherein the divided patterns farthest from the third central area A3 in the plurality of divided patterns 520 are first divided patterns 521, the dimension l 2-(N-1)lmin of the first divided patterns 521 along the first direction X is measured, the dimension l 3724 of the first etched patterns is measured, the CD is obtained from the CD 5324, the CD is obtained from the CD 5357, the CD is obtained from the CD 5257, the CD is obtained from the CD AEI,
f(0)=CDAEI_short-CDAEI;
Obtaining a fourth correction model as f (1) =cd AEI_end_short-CDAEI_short +f (0) according to the third correction model;
obtaining a fifth correction model according to the third correction model and the fourth correction model as
And x is more than or equal to 2 and less than or equal to N, N is a natural number greater than or equal to 2.
The fifth correction model is obtained by performing linear simulation on the feature sizes of the plurality of division patterns 520, for example, the size CD AEI_end of the first division pattern 521 and the feature size of the second division pattern, and the feature size of the x-th division pattern, where x is 2 and N is a natural number greater than or equal to 2.
In this embodiment, the CD AEI is obtained by measuring the first etching pattern when the dimension of the first test pattern along the first direction X is greater than a preset value.
Referring to fig. 13, fig. 13 is a schematic structural diagram of fig. 12, and each to-be-compensated edge 410 is respectively subjected to a first compensation correction according to the etching offset model to obtain a first compensation edge 370.
The first compensation correction further comprises compensation correction of the edge of the target graph 400 of the first central area A1, the first compensation correction method comprises compensation correction of the edge of the target graph 400 of the first central area A1 according to a third correction model, compensation correction of the first edges 411 to be compensated of the first edge areas B1 according to a fourth correction model, compensation correction of the x-th section edges to be compensated of the first edge areas B1 according to a fifth correction model, and x is more than or equal to 2 and less than or equal to N, wherein N is a natural number larger than or equal to 2.
Specifically, according to the third correction model, f (0) =cd AEI_short-CDAEI, a compensation value is obtained, and the edge of the target pattern 400 of the first central area A1 is moved by a distance of half the compensation value along a direction perpendicular to the first direction X and reducing the etching deviation.
Specifically, when the to-be-compensated edge 410 is the first to-be-compensated edge 411, according to the fourth correction model,
f(1)=CDAEI_end_short-CDAEI_short+f(0);
A compensation value is obtained such that the first compensation edge 461 is shifted by a distance of half the compensation value in a direction perpendicular to the first direction X and reducing the etching deviation.
When the to-be-compensated side 410 is the to-be-compensated side 410 other than the first to-be-compensated side 411, according to the fifth correction model,
And X is more than or equal to 2 and less than or equal to N, N is a natural number which is more than or equal to 2, a compensation value is obtained, and the (N-1) sides 410 to be compensated, namely, the second side to be compensated, the third side to be compensated, the X-th side to be compensated and the N-th side to be compensated, are moved by a distance which is half of the compensation value along a direction which is perpendicular to the first direction X and reduces etching deviation.
Specifically, when the to-be-compensated edge 410 is the second to-be-compensated edge, x=2 is passed through the fifth correction model to obtain the compensation value f (2) of the second to-be-compensated edge.
In this embodiment, the edge 410 to be compensated is moved by a distance of half the compensation value in a direction approaching the central axis of the target pattern 400.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the mask, a target pattern is provided, the target pattern extends along a first direction, the target pattern is divided into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, the edge of the target pattern of each first edge area is divided into a plurality of edges to be compensated, an etching offset model is obtained, first compensation correction is respectively carried out on each edge to be compensated according to the etching offset model to obtain a first compensation edge, and the mask is manufactured by the first compensation edges.
Correspondingly, the invention further provides a method for forming the semiconductor structure, which comprises the steps of providing a substrate, forming photoresist on the surface of the substrate, providing a mask, wherein the method for forming the mask comprises the steps of providing a target pattern, extending the target pattern along a first direction, dividing the target pattern into a first central area and two first edge areas which are respectively positioned at two sides of the first central area, dividing the edge of the target pattern of each first edge area into a plurality of edges to be compensated, obtaining an etching offset model, respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge, manufacturing the mask by taking the first compensation edge, exposing the photoresist by taking the mask as a mask to form a patterned layer, and etching the substrate by taking the patterned layer as a mask.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims (16)

1.一种目标图形的修正方法，其特征在于，包括：1. A method for correcting a target graphic, comprising: 提供目标图形，且所述目标图形沿第一方向延伸；Providing a target pattern, wherein the target pattern extends along a first direction; 将所述目标图形划分为一个第一中心区以及分别位于所述第一中心区两侧的两个第一边缘区；Dividing the target graphic into a first central area and two first edge areas respectively located on both sides of the first central area; 将各所述第一边缘区的目标图形的边缘分割为若干待补偿边，沿第一方向上，将所述第一边缘区的目标图形的边缘分割为N个待补偿边；Divide the edge of the target pattern in each of the first edge regions into a plurality of edges to be compensated, and divide the edge of the target pattern in the first edge region into N edges to be compensated along the first direction; 获取刻蚀偏移模型，所述刻蚀偏移模型适宜于弥补由于图形密度不一致导致的刻蚀负载效应；Acquire an etching offset model, wherein the etching offset model is suitable for compensating for an etching load effect caused by inconsistent pattern density; 根据刻蚀偏移模型对每个待补偿边分别进行第一补偿修正，得到第一补偿边；Perform a first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; 当所述目标图形沿第一方向上的尺寸大于预设值时，所述刻蚀偏移模型包括：第一修正模型和第二修正模型，所述第一修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第二修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；When the size of the target pattern along the first direction is greater than a preset value, the etching offset model includes: a first correction model and a second correction model, the first correction model is used to compensate and correct the first edge to be compensated in the first edge area, and the second correction model is used to compensate and correct the xth segment of the edge to be compensated in the first edge area; 当所述目标图形沿第一方向上的尺寸小于预设值时，所述刻蚀偏移模型包括：第三修正模型和第四修正模型以及第五修正模型；所述第三修正模型用于对第一中心区的目标图形的边缘进行补偿修正，所述第四修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第五修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；其中x为大于等于2且小于等于N的自然数。When the size of the target graphic along the first direction is smaller than a preset value, the etching offset model includes: a third correction model, a fourth correction model and a fifth correction model; the third correction model is used to compensate for the edge of the target graphic in the first central area, the fourth correction model is used to compensate for the first edge to be compensated in the first edge area, and the fifth correction model is used to compensate for the xth segment of the edge to be compensated in the first edge area; wherein x is a natural number greater than or equal to 2 and less than or equal to N. 2.如权利要求1所述的目标图形的修正方法，其特征在于，当所述目标图形沿第一方向上的尺寸大于预设值时，将所述目标图形划分为一个第一中心区和两个第一边缘区的方法包括：获取所述目标图形第一方向上的尺寸llong；在所述目标图形中获取第一中心区，所述第一中心区沿第一方向上的尺寸l1，且l1为大于等于最小分割值lmin；在所述目标图形中获取第一边缘区，所述第一边缘区沿第一方向上的尺寸为l0，且满足l0=（llong-l1）/2。2. The target graphic correction method according to claim 1, characterized in that when the size of the target graphic along the first direction is greater than a preset value, the method of dividing the target graphic into a first central area and two first edge areas comprises: obtaining a size l long of the target graphic in the first direction; obtaining a first central area in the target graphic, wherein a size l 1 of the first central area along the first direction is greater than or equal to a minimum segmentation value l min ; obtaining a first edge area in the target graphic, wherein a size l 0 of the first edge area along the first direction satisfies l 0 = (l long -l 1 )/2. 3.如权利要求2所述的目标图形的修正方法，其特征在于，将各所述第一边缘区目标图形的边缘分割为若干待补偿边的方法包括：沿第一方向上，将所述第一边缘区的目标图形的边缘分割为N个待补偿边，且N取llong/lmin的整数值；在所述若干待补偿边中获取第一待补偿边，所述第一待补偿边为在第一方向上到第一中心区距离最远的待补偿边，且所述第一待补偿边的尺寸为l0-（N-1）lmin，第一待补偿边以外的(N-1)个待补偿边的尺寸均为最小分割值lmin。3. The target graphic correction method according to claim 2 is characterized in that the method of dividing the edge of each target graphic in the first edge area into a plurality of edges to be compensated comprises: dividing the edge of the target graphic in the first edge area into N edges to be compensated along the first direction, and N takes an integer value of l long /l min ; obtaining a first edge to be compensated from the plurality of edges to be compensated, the first edge to be compensated being the edge to be compensated that is farthest from the first central area in the first direction, and the size of the first edge to be compensated is l 0 - (N-1) l min , and the sizes of the (N-1) edges to be compensated other than the first edge to be compensated are all the minimum segmentation value l min . 4.如权利要求3所述的目标图形的修正方法，其特征在于，所述刻蚀偏移模型包括：第一修正模型和第二修正模型；获取所述刻蚀偏移模型的方法包括：提供第二测试图形，在第一方向上所述第二测试图形的尺寸大于预设值；以所述第二测试图形为掩膜，进行曝光工艺、显影工艺以及蚀刻工艺之后，得到第二蚀刻图形；将所述第二蚀刻图形划分为一个第二中心区以及分别位于所述第一中心区两侧的两个第二边缘区，且所述第二边缘区的尺寸为l0；将各第二边缘区沿第一方向分割为若干分割图形，在所述若干分割图形中，到第二中心区距离最远的分割图形为第一分割图形，所述第一分割图形沿第一方向的尺寸l0-（N-1）lmin；测量所述第一分割图形的尺寸CDAEI_end；获取第二特征尺寸CDAEI；根据CDAEI_end和CDAEI，得到第一修正模型为，4. The target pattern correction method according to claim 3, characterized in that the etching offset model comprises: a first correction model and a second correction model; a method for obtaining the etching offset model comprises: providing a second test pattern, the size of the second test pattern in the first direction is greater than a preset value; using the second test pattern as a mask, performing an exposure process, a development process and an etching process to obtain a second etching pattern; dividing the second etching pattern into a second central area and two second edge areas respectively located on both sides of the first central area, and the size of the second edge area is l 0 ; dividing each second edge area into a plurality of segmented patterns along the first direction, among which the segmented pattern with the farthest distance to the second central area is the first segmented pattern, and the size of the first segmented pattern along the first direction is l 0 -(N-1)l min ; measuring the size CD AEI_end of the first segmented pattern; obtaining a second characteristic size CD AEI ; obtaining the first correction model according to CD AEI_end and CD AEI for, =CDAEI_end - CDAEI ； =CD AEI_end - CD AEI; 根据所述第一修正模型，得到第二修正模型为，According to the first revised model , and obtain the second revised model for, ； ; 且2≤x≤N，N为大于等于2的自然数；第二边缘区沿第一方向分割为若干分割图形。And 2≤x≤N, N is a natural number greater than or equal to 2; the second edge area is divided into a plurality of segmentation patterns along the first direction. 5.如权利要求4所述的目标图形的修正方法，其特征在于，所述第一补偿修正的方法包括：根据第一修正模型，对各第一边缘区的第一待补偿边进行补偿修正；根据第二修正模型，对第一边缘区的第x段待补偿边进行补偿修正，且2≤x≤N，N为大于等于2的自然数。5. The target graphic correction method as described in claim 4 is characterized in that the first compensation correction method includes: compensating and correcting the first edge to be compensated in each first edge zone according to the first correction model; compensating and correcting the xth edge to be compensated in the first edge zone according to the second correction model, and 2≤x≤N, N is a natural number greater than or equal to 2. 6.如权利要求1所述的目标图形的修正方法，其特征在于，当所述目标图形沿第一方向上的尺寸小于预设值时，将所述目标图形划分为一个第一中心区和两个第一边缘区的方法包括：获取所述目标图形第一方向上的尺寸lshort；在所述目标图形中获取第一中心区，所述第一中心区沿第一方向上的尺寸l3，且l3等于最小分割值lmin；在所述目标图形中获取第一边缘区，所述第一边缘区沿第一方向上的尺寸为l2，且满足l2=（lshort-l3）/2。6. The method for correcting a target graphic according to claim 1, characterized in that, when the size of the target graphic along the first direction is smaller than a preset value, the method for dividing the target graphic into a first central area and two first edge areas comprises: obtaining a size l short of the target graphic in the first direction; obtaining a first central area in the target graphic, wherein a size l 3 of the first central area along the first direction is l 3 , and l 3 is equal to a minimum segmentation value l min ; obtaining a first edge area in the target graphic, wherein a size of the first edge area along the first direction is l 2 , and satisfies l 2 = (l short -l 3 )/2. 7.如权利要求6所述的目标图形的修正方法，其特征在于，将各所述第一边缘区的目标图形的边缘分割为若干待补偿边的方法包括：沿第一方向上，将所述第一边缘区的目标图形的边缘分割为N个待补偿边，且N取lshort/lmin的整数值；在所述若干待补偿边中获取第一待补偿边，所述第一待补偿边为在第一方向上到第一中心区距离最远的待补偿边，且所述第一待补偿边的尺寸为l2-（N-1）lmin，第一待补偿边以外的(N-1)个待补偿边的尺寸均为最小分割值lmin。7. The method for correcting a target graphic as claimed in claim 6, characterized in that the method for dividing the edge of the target graphic in each first edge area into a plurality of edges to be compensated comprises: dividing the edge of the target graphic in the first edge area into N edges to be compensated along a first direction, and N is an integer value of l short /l min ; obtaining a first edge to be compensated from the plurality of edges to be compensated, the first edge to be compensated being the edge to be compensated that is farthest from the first central area in the first direction, and the size of the first edge to be compensated is l 2 - (N-1) l min , and the sizes of the (N-1) edges to be compensated other than the first edge to be compensated are all the minimum division value l min . 8.如权利要求7所述的目标图形的修正方法，其特征在于，所述刻蚀偏移模型包括：第三修正模型和第四修正模型以及第五修正模型；获取所述刻蚀偏移模型的方法包括：提供第三测试图形，在第一方向上所述第三测试图形的尺寸小于预设值；以所述第三测试图形为掩膜，进行曝光工艺、显影工艺以及蚀刻工艺之后，得到第三蚀刻图形；将所述第三蚀刻图形划分为一个第三中心区以及位于所述第三中心区两侧的两个第三边缘区，且所述第三边缘区的尺寸为l2；将各所述第三蚀刻图形分割为若干分割图形，在所述若干分割图形中，到第三中心区距离最远的分割图形为第一分割图形，所述第一分割图形沿第一方向的尺寸l2-（N-1）lmin；测量所述第一分割图形的尺寸CDAEI_end_short；测量第三中心区的第三蚀刻图形的尺寸CDAEI_short；获取CDAEI；根据CDAEI_end_short和CDAEI_short、以及CDAEI，得到第三修正模型为，8. The method for correcting a target pattern according to claim 7, wherein the etching offset model comprises: a third correction model, a fourth correction model and a fifth correction model; a method for obtaining the etching offset model comprises: providing a third test pattern, wherein the size of the third test pattern in the first direction is smaller than a preset value; using the third test pattern as a mask, performing an exposure process, a development process and an etching process to obtain a third etching pattern; dividing the third etching pattern into a third central area and two third edge areas located on both sides of the third central area, wherein the size of the third edge area is l 2 ; dividing each of the third etching patterns into a plurality of segmented patterns, wherein the segmented pattern farthest from the third central area is a first segmented pattern, wherein the size of the first segmented pattern along the first direction is l 2 -(N-1)l min ; measuring the size CD AEI_end_short of the first segmented pattern; measuring the size CD AEI_short of the third etching pattern in the third central area; obtaining CD AEI ; obtaining the third correction model according to CD AEI_end_short , CD AEI_short and CD AEI for, =CDAEI_short-CDAEI； =CD AEI_short -CD AEI ; 根据第三修正模型，得到第四修正模型为，According to the third revised model , and the fourth revised model is obtained for, =CDAEI_end_short-CDAEI_short+ ； =CD AEI_end_short -CD AEI_short + ; 根据第三修正模型和第四修正模型，得到第五修正模型为，According to the third revised model and the fourth revised model , and get the fifth revised model for, ； ; 且2≤x≤N，N为大于等于2的自然数；所述第三蚀刻图形分割为若干分割图形。And 2≤x≤N, N is a natural number greater than or equal to 2; the third etching pattern is divided into a plurality of divided patterns. 9.如权利要求8所述的目标图形的修正方法，其特征在于，所述第一补偿修正还包括：对第一中心区的目标图形的边缘进行补偿修正；第二补偿修正的方法包括：根据第三修正模型，对第一中心区的目标图形的边缘进行补偿修正；根据第四修正模型，对各第一边缘区的第一待补偿边进行补偿修正；根据第五修正模型，对各第一边缘区的第x段待补偿边进行补偿修正，且2≤x≤N，N为大于等于2的自然数。9. The target graphic correction method as described in claim 8 is characterized in that the first compensation correction also includes: compensating and correcting the edge of the target graphic in the first central area; the second compensation correction method includes: compensating and correcting the edge of the target graphic in the first central area according to the third correction model; compensating and correcting the first side to be compensated in each first edge area according to the fourth correction model; compensating and correcting the xth side to be compensated in each first edge area according to the fifth correction model, and 2≤x≤N, N is a natural number greater than or equal to 2. 10.如权利要求4所述的目标图形的修正方法，其特征在于，所述CDAEI的获取方法包括：提供第一测试图形；以所述第一测试图形制作的掩膜版为掩膜，进行曝光工艺和显影工艺之后，得到第一光刻图形；以所述第一光刻图形为掩膜，进行蚀刻工艺，得到第一蚀刻图形；测量得到第一蚀刻图形的第二特征尺寸CDAEI。10. The target pattern correction method according to claim 4, characterized in that the CD AEI acquisition method comprises: providing a first test pattern; using a mask plate made of the first test pattern as a mask, performing an exposure process and a development process to obtain a first photolithography pattern; using the first photolithography pattern as a mask, performing an etching process to obtain a first etching pattern; and measuring and obtaining a second characteristic dimension CD AEI of the first etching pattern. 11.如权利要求10所述的目标图形的修正方法，其特征在于，还包括：测量得到第一光刻图形的第一特征尺寸CDADI；获取目标图形的方法包括：测量得到第一光刻图形的第一特征尺寸CDADI；根据所述第一特征尺寸CDADI和第二特征尺寸CDAEI之间的差值，获取补偿值etching bias=CDADI-CDAEI；提供初始目标图形；根据所述补偿值etching bias，对所述初始目标图形进行第二补偿修正，得到所述目标图形。11. The target pattern correction method according to claim 10, characterized in that it also includes: measuring and obtaining a first characteristic dimension CD ADI of a first photolithography pattern; the method for obtaining the target pattern includes: measuring and obtaining a first characteristic dimension CD ADI of the first photolithography pattern; obtaining a compensation value etching bias =CD ADI -CD AEI according to a difference between the first characteristic dimension CD ADI and a second characteristic dimension CD AEI ; providing an initial target pattern; performing a second compensation correction on the initial target pattern according to the compensation value etching bias to obtain the target pattern. 12.如权利要求8所述的目标图形的修正方法，其特征在于，所述CDAEI的获取方法包括：提供第一测试图形；以所述第一测试图形制作的掩膜版为掩膜，进行曝光工艺和显影工艺之后，得到第一光刻图形；以所述第一光刻图形为掩膜，进行蚀刻工艺，得到第一蚀刻图形；测量得到第一蚀刻图形的第二特征尺寸CDAEI。12. The target pattern correction method according to claim 8, characterized in that the CD AEI acquisition method comprises: providing a first test pattern; using a mask plate made of the first test pattern as a mask, performing an exposure process and a development process to obtain a first photolithography pattern; using the first photolithography pattern as a mask, performing an etching process to obtain a first etching pattern; and measuring and obtaining a second characteristic dimension CD AEI of the first etching pattern. 13.如权利要求12所述的目标图形的修正方法，其特征在于，还包括：测量得到第一光刻图形的第一特征尺寸CDADI；获取目标图形的方法包括：测量得到第一光刻图形的第一特征尺寸CDADI；根据所述第一特征尺寸CDADI和第二特征尺寸CDAEI之间的差值，获取补偿值etching bias=CDADI-CDAEI；提供初始目标图形；根据所述补偿值etching bias，对所述初始目标图形进行第二补偿修正，得到所述目标图形。13. The target pattern correction method according to claim 12, further comprising: measuring and obtaining a first characteristic dimension CD ADI of a first photolithography pattern; the method for obtaining a target pattern comprises: measuring and obtaining a first characteristic dimension CD ADI of a first photolithography pattern; obtaining a compensation value etching bias =CD ADI -CD AEI according to a difference between the first characteristic dimension CD ADI and a second characteristic dimension CD AEI ; providing an initial target pattern; performing a second compensation correction on the initial target pattern according to the compensation value etching bias to obtain the target pattern. 14.如权利要求2所述的目标图形的修正方法，其特征在于，所述预设值的范围为700纳米~1500纳米。14. The target pattern correction method according to claim 2, wherein the preset value ranges from 700 nanometers to 1500 nanometers. 15.一种掩膜版的制作方法，其特征在于，包括：15. A method for manufacturing a mask, comprising: 提供目标图形，且所述目标图形沿第一方向延伸；Providing a target pattern, wherein the target pattern extends along a first direction; 将所述目标图形划分为一个第一中心区以及分别位于所述第一中心区两侧的两个第一边缘区；Dividing the target graphic into a first central area and two first edge areas respectively located on both sides of the first central area; 将各所述第一边缘区的目标图形的边缘分割为若干待补偿边，沿第一方向上，将所述第一边缘区的目标图形的边缘分割为N个待补偿边；Divide the edge of the target pattern in each of the first edge regions into a plurality of edges to be compensated, and divide the edge of the target pattern in the first edge region into N edges to be compensated along the first direction; 获取刻蚀偏移模型，所述刻蚀偏移模型适宜于弥补由于图形密度不一致导致的刻蚀负载效应；Acquire an etching offset model, wherein the etching offset model is suitable for compensating for an etching load effect caused by inconsistent pattern density; 根据刻蚀偏移模型对每个待补偿边分别进行第一补偿修正，得到第一补偿边；Perform a first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; 以所述第一补偿边制作掩膜版；Making a mask using the first compensation edge; 当所述目标图形沿第一方向上的尺寸大于预设值时，所述刻蚀偏移模型包括：第一修正模型和第二修正模型，所述第一修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第二修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；When the size of the target pattern along the first direction is greater than a preset value, the etching offset model includes: a first correction model and a second correction model, the first correction model is used to compensate and correct the first edge to be compensated in the first edge area, and the second correction model is used to compensate and correct the xth segment of the edge to be compensated in the first edge area; 当所述目标图形沿第一方向上的尺寸小于预设值时，所述刻蚀偏移模型包括：第三修正模型和第四修正模型以及第五修正模型；所述第三修正模型用于对第一中心区的目标图形的边缘进行补偿修正，所述第四修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第五修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；When the size of the target pattern along the first direction is smaller than a preset value, the etching offset model includes: a third correction model, a fourth correction model and a fifth correction model; the third correction model is used to compensate and correct the edge of the target pattern in the first central area, the fourth correction model is used to compensate and correct the first edge to be compensated in the first edge area, and the fifth correction model is used to compensate and correct the xth segment of the edge to be compensated in the first edge area; 其中x为大于等于2且小于等于N的自然数。Wherein x is a natural number greater than or equal to 2 and less than or equal to N. 16.一种半导体结构的形成方法，其特征在于，包括：16. A method for forming a semiconductor structure, comprising: 提供基底；providing a substrate; 在所述基底表面形成光刻胶；forming a photoresist on the surface of the substrate; 提供掩膜版，所述掩膜版的形成方法包括：提供目标图形，且所述目标图形沿第一方向延伸；将所述目标图形划分为一个第一中心区以及分别位于所述第一中心区两侧的两个第一边缘区；将各所述第一边缘区的目标图形的边缘分割为若干待补偿边，沿第一方向上，将所述第一边缘区的目标图形的边缘分割为N个待补偿边；获取刻蚀偏移模型，所述刻蚀偏移模型适宜于弥补由于图形密度不一致导致的刻蚀负载效应；根据刻蚀偏移模型对每个待补偿边分别进行第一补偿修正，得到第一补偿边；A mask is provided, and a method for forming the mask includes: providing a target pattern, wherein the target pattern extends along a first direction; dividing the target pattern into a first central area and two first edge areas respectively located on both sides of the first central area; dividing the edge of the target pattern in each of the first edge areas into a plurality of edges to be compensated, and dividing the edge of the target pattern in the first edge area into N edges to be compensated along the first direction; obtaining an etching offset model, wherein the etching offset model is suitable for compensating for an etching load effect caused by inconsistent pattern density; performing a first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; 以所述第一补偿边制作掩膜版；Making a mask using the first compensation edge; 以所述掩膜版为掩膜，对所述光刻胶进行曝光，形成图形化层；Using the mask plate as a mask, exposing the photoresist to form a patterned layer; 以所述图形化层为掩膜，对所述基底进行刻蚀；Using the patterned layer as a mask, etching the substrate; 当所述目标图形沿第一方向上的尺寸大于预设值时，所述刻蚀偏移模型包括：第一修正模型和第二修正模型，所述第一修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第二修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；When the size of the target pattern along the first direction is greater than a preset value, the etching offset model includes: a first correction model and a second correction model, the first correction model is used to compensate and correct the first edge to be compensated in the first edge area, and the second correction model is used to compensate and correct the xth segment of the edge to be compensated in the first edge area; 当所述目标图形沿第一方向上的尺寸小于预设值时，所述刻蚀偏移模型包括：第三修正模型和第四修正模型以及第五修正模型；所述第三修正模型用于对第一中心区的目标图形的边缘进行补偿修正，所述第四修正模型用于对第一边缘区的第一待补偿边进行补偿修正，所述第五修正模型用于对第一边缘区的第x段待补偿边进行补偿修正；When the size of the target pattern along the first direction is smaller than a preset value, the etching offset model includes: a third correction model, a fourth correction model and a fifth correction model; the third correction model is used to compensate and correct the edge of the target pattern in the first central area, the fourth correction model is used to compensate and correct the first edge to be compensated in the first edge area, and the fifth correction model is used to compensate and correct the xth segment of the edge to be compensated in the first edge area; 其中x为大于等于2且小于等于N的自然数。Wherein x is a natural number greater than or equal to 2 and less than or equal to N.
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