CN113084694B - Device and method for realizing tribochemical reaction between abrasive and wafer substrate - Google Patents
Device and method for realizing tribochemical reaction between abrasive and wafer substrate Download PDFInfo
- Publication number
- CN113084694B CN113084694B CN202110378440.0A CN202110378440A CN113084694B CN 113084694 B CN113084694 B CN 113084694B CN 202110378440 A CN202110378440 A CN 202110378440A CN 113084694 B CN113084694 B CN 113084694B
- Authority
- CN
- China
- Prior art keywords
- pool
- wafer substrate
- abrasive
- liquid
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16N—LUBRICATING
- F16N15/00—Lubrication with substances other than oil or grease; Lubrication characterised by the use of particular lubricants in particular apparatus or conditions
- F16N15/04—Lubrication with substances other than oil or grease; Lubrication characterised by the use of particular lubricants in particular apparatus or conditions with water
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The invention discloses a device and a method for realizing tribochemical reaction between an abrasive and a wafer substrate, wherein the device comprises a main shaft module, a liquid pool module and a clamping module; the spindle module comprises a spindle, a switching disc, a sample table and a heater, wherein the sample table is fixedly arranged on the wafer substrate; the liquid pool module comprises a liquid pool, a cover plate, a fixed ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom provided with a mounting through hole, a pool inner shell, a pool outer shell and a pool cover provided with a sample port; the clamping module comprises a loading device, a sample clamping rod and a hard abrasive pressing head. It has the following advantages: through the scratching experiment of the hard abrasive pressing head and the wafer substrate, the scratching speed, load, temperature and lubrication state in the reduction processing process are further researched, the interface action relation between the hard abrasive particles and the wafer is further researched, the action mechanism of the interface tribochemical reaction of the hard abrasive and the wafer substrate is facilitated to be disclosed, and the device has good application prospect in the field of efficient ultra-precise processing of the semiconductor wafer substrate, and is simple in device and convenient to operate.
Description
Technical Field
The invention relates to a device and a method for realizing tribochemical reaction between an abrasive and a wafer substrate.
Background
With the rapid development of new energy automobiles and 5G technology, semiconductor materials are continuously developed towards high frequency, high power, high heat conductivity and the like. At present, the traditional semiconductor power device represented by monocrystalline silicon gradually reaches the material development limit, and the working requirements of the semiconductor device under the conditions of high frequency, high temperature, high power, high energy efficiency, severe environment resistance and the like are difficult to meet. New semiconductor materials, such as silicon carbide and gallium nitride, have been developed as mainstream semiconductor materials for high-performance electronic devices due to their excellent properties. However, the ultra-high hardness, extreme brittleness, and extremely strong corrosion resistance of the new semiconductor materials make it difficult to process. The ultra-precise polishing technology of the novel semiconductor material adopts the traditional silicon wafer chemical mechanical polishing technology. Because the hardness and corrosion resistance of the novel semiconductor materials such as silicon carbide, gallium nitride and the like are far higher than those of silicon wafers, the processing efficiency is low, the cost is high, and the environmental pollution problem caused by the mechanochemical polishing technology is increasingly remarkable. Therefore, the interface action process of the abrasive particles and the wafer is deeply analyzed, so that the abrasive particle polishing and removing mechanism of the novel semiconductor wafer can be mastered, and further, the efficient ultra-precise nondestructive processing of the novel semiconductor wafer is realized. The traditional research means of the interface friction effect of the abrasive particles and the wafer substrate is mainly realized by means of a nano indentation scratch instrument, however, the nano indentation scratch instrument has low load (mN magnitude) and small speed (mu m/s magnitude), and has no temperature control device and lubricating liquid module, and the difference between the temperature control device and the real processing environment is large, so that the interface friction effect of the abrasive particles and the wafer substrate in the processing process is difficult to effectively research.
Disclosure of Invention
The invention provides a device and a method for realizing tribochemical reaction between an abrasive and a wafer substrate, which overcome the defects in the background technology.
One of the adopted technical schemes for solving the technical problems is as follows: the device for realizing the tribochemical reaction between the abrasive and the wafer substrate comprises a main shaft module, a liquid pool module and a clamping module;
the spindle module comprises a spindle, a switching disc, a sample table for fixing a wafer substrate thereon and a heater for heating the sample table, wherein the switching disc is fixedly arranged on the spindle, the sample table is fixedly arranged on the switching disc, and the sample table is driven to rotate by the spindle;
The liquid pool module comprises a liquid pool, a cover plate, a fixed ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom provided with a mounting through hole, a pool inner shell, a pool outer shell and a pool cover provided with a sample port; the inner tank shell and the outer tank shell are fixedly arranged on the tank bottom at intervals, the inner tank shell surrounds the mounting through holes, the tank cover is fixedly arranged on the outer tank shell, the tank cover and Chi Nake are arranged at intervals, and the liquid tank is provided with a liquid outlet; the cover plate is fixedly connected to the pool cover and is covered with the sample port, the fixing ring is fixedly arranged on the cover plate, the liquid inlet pipe is arranged in the fixing ring, and the lower port of the liquid inlet pipe corresponds to the annular interval between the inner pool shell and the outer pool shell so as to inject lubricating liquid into the pool; the spindle can be rotatably sealed and installed in the installation through hole, the adapter plate can be rotatably supported on the inner shell of the liquid pool, and the adapter plate, the wafer substrate and the sample table are positioned in the liquid pool;
The clamping module comprises a loading device, a sample clamping rod and a hard abrasive pressing head, wherein the sample clamping rod is arranged in a fixed ring, the hard abrasive pressing head is fixedly arranged at the lower end of the sample clamping rod, and the loading device is connected with the sample clamping rod and applies pressure to the sample clamping rod so that the hard abrasive pressing head is in contact with a wafer substrate.
In one embodiment: a sealing ring is arranged between the sample table and the adapter plate.
In one embodiment: a mounting cavity is formed between the sample table and the adapter plate, and the heater is mounted in the mounting cavity.
In one embodiment: the spindle module comprises a temperature control device which is matched with the sample table and is connected with the heater.
In one embodiment: the lower port of the liquid inlet pipe corresponds to the outer periphery of the sample stage.
In one embodiment: the inner tank shell comprises a lower inner tank shell and an upper Chi Nake, wherein the lower inner tank shell is fixedly arranged on the tank bottom, and the upper inner tank shell fixedly surrounds the lower inner tank shell.
In one embodiment: the lubricating liquid is neutral deionized water.
In one embodiment: the hard abrasive particles of the hard abrasive pressure head are alumina, silicon carbide, cubic boron nitride or diamond, and the curvature radius of the hard abrasive particles is 50-500 mu m.
In one embodiment: the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond, and the diameter of the wafer substrate is 50.8-152.4mm.
The second technical scheme adopted for solving the technical problems is as follows: the implementation method of the implementation device for the tribochemical reaction of the abrasive and the wafer substrate comprises the following steps:
step 1, installing a pool bottom on a main shaft, and fixing a pool inner shell and a pool outer shell on the pool bottom;
step 2, fixing a sample table fixedly provided with a wafer substrate on a switching disc, and fixing the switching disc on a main shaft;
step 3, installing a pool cover, a cover plate and a clamping module;
Step 4, setting the load of the loading device and the speed of the main shaft, respectively controlling the lubrication condition and the temperature through the injected lubrication liquid and the heater, and scratching the surface of the wafer substrate by the hard abrasive pressing head;
And 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the chemical composition change of the scratch position of the wafer substrate on a scanning probe micro-Raman spectrometer.
Compared with the background technology, the technical proposal has the following advantages:
Through the scratching experiment of the hard abrasive pressing head and the wafer substrate, the scratching speed, load, temperature and lubrication state in the reduction processing process are further researched, the interface action relation between the hard abrasive particles and the wafer is further researched, the action mechanism of the interface tribochemical reaction of the hard abrasive and the wafer substrate is facilitated to be disclosed, and the device has good application prospect in the field of efficient ultra-precise processing of the semiconductor wafer substrate, and is simple in device and convenient to operate.
The liquid pool module comprises a liquid pool, a cover plate, a fixing ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom, a pool inner shell, a pool outer shell and a pool cover, the inner and outer spaces of the pool inner shell and the pool outer shell are fixedly arranged on the pool bottom, the pool cover is fixedly arranged on the pool outer shell and is arranged at intervals between the pool cover and Chi Nake, the liquid pool is provided with a liquid outlet, the cover plate is fixedly connected on the pool cover and is connected with a sample port in a covering manner, the fixing ring is fixedly arranged on the cover plate, the liquid inlet pipe is arranged in the fixing ring, the lower port of the liquid inlet pipe corresponds to the annular space of the pool inner shell and the pool outer shell so as to inject lubricating liquid into the liquid pool, and the lubricating liquid can be fully lubricated.
And an installation cavity is formed between the sample table and the adapter plate, and the heater is installed in the installation cavity, so that the structure is compact.
The lower port of the liquid inlet pipe corresponds to the periphery of the sample table, and provides a lubrication effect.
The lubricating liquid is neutral deionized water, and provides a lubricating effect.
The hard abrasive particles of the hard abrasive material pressure head are alumina, silicon carbide, cubic boron nitride or diamond, the curvature radius of the hard abrasive particles is 50-500 mu m, the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond, and the diameter of the wafer substrate is 50.8-152.4mm, so that the lubrication effect is provided.
Drawings
The invention is further described below with reference to the drawings and the detailed description.
Fig. 1 is a schematic perspective view of an implementation device of the embodiment.
Fig. 2 is a schematic top view of an embodiment implementation device.
Fig. 3 is a schematic view of section A-A of fig. 2.
Fig. 4 is one of the schematic perspective cut-away views of the implementation device of the embodiment.
Fig. 5 is a schematic drawing showing a second perspective cutaway view of the implementation device of the embodiment.
Fig. 6 is a schematic view of the surface state of the scratched wafer substrate at the surface scratch of the wafer substrate observed by a scanning probe micro raman spectrometer.
Description of the reference numerals:
the device comprises a spindle module 10, a spindle 11, a sample table 12, a switching disc 13 and a sealing ring 14.
The liquid pool module 20, the pool bottom 21, the pool outer shell 22, the lower pool inner shell 23, the upper Chi Nake, the pool cover 25, the cover plate 26, the fixing ring 27, the liquid outlet 28 and the liquid inlet pipe 29.
The device comprises a clamping module 30, a loading device, a sample clamping rod 32 and a hard abrasive pressing head 33.
Detailed Description
Referring to fig. 1 to 5, the device for realizing the tribochemical reaction between the abrasive and the wafer substrate includes a spindle module 10, a liquid pool module 20 and a clamping module 30.
The spindle module 10 comprises a spindle 11, a switching disc 13, a sample table 12 and a heater for heating the sample table 12, wherein the switching disc 13 is fixed on the spindle 11 through three threaded connections, the sample table 12 is fixed on the switching disc 13 through three threaded connections, and the sample table 12 is driven to rotate at a high speed through the spindle 11. Wherein: a wafer substrate, such as a 50.8mm single crystal silicon carbide wafer sample, is adhered to the sample stage 12 using a hot melt adhesive; a mounting cavity is formed between the sample stage 12 and the adapter plate 13, and a sealing ring 14 is arranged between the sample stage 12 and the adapter plate 13 to seal the mounting cavity, and lubricating liquid is prevented from entering the main shaft through the sealing ring. The heater is arranged in the mounting cavity, and the heater is such as a resistance wire; the spindle module 10 includes a temperature control device that mates with the sample stage and is connected to a heater to control temperature.
The liquid pool module 20 comprises a liquid pool, a cover plate 26, a fixing ring 27 and a liquid inlet pipe 29, wherein the liquid pool comprises a pool bottom 21 provided with a mounting through hole, a pool inner shell, a pool outer shell 22 and a pool cover 25 provided with a sample port; the inner tank shell and the outer tank shell 22 are fixedly arranged on the tank bottom 21 at intervals, the inner tank shell surrounds the mounting through holes, the tank cover 25 is fixedly arranged on the outer tank shell 22, the tank cover 25 and the inner tank shell are arranged at intervals, and the tank bottom 21 is provided with a liquid outlet 28; in a specific structure, the inner tank shell comprises a lower inner tank shell 23 and an upper inner tank shell 24, wherein the lower inner tank shell 23 is fixedly arranged on the tank bottom 21, and the upper inner tank shell 24 fixedly surrounds the lower inner tank shell 23. The cover plate 26 is fixedly connected to the cell cover 25 and covers the sample port, the fixing ring 27 is fixedly arranged on the cover plate 26, the liquid inlet pipe 29 is arranged in the fixing ring 27, the lower port of the liquid inlet pipe 29 corresponds to the annular interval between the inner cell shell and the outer cell shell so as to inject lubricating liquid into the liquid cell, in the concrete structure, the lower port of the liquid inlet pipe corresponds to the peripheral part of the sample table, the lubricating liquid is neutral deionized water, and the PH=7.
The spindle 11 is rotatably sealed in the mounting hole, the adapter plate 13 is rotatably supported in the cell inner case, the adapter plate 13, the wafer substrate and the sample stage 12 are located in the liquid bath, and the lubricating liquid in the liquid bath circulates.
The clamping module 30 comprises a loading device, a sample clamping rod 32 and a hard abrasive pressing head 33, wherein the sample clamping rod is arranged in a fixed ring, the hard abrasive pressing head is fixedly arranged at the lower end of the sample clamping rod, and the loading device is connected with the sample clamping rod and applies pressure to the sample clamping rod so as to enable the hard abrasive pressing head to be in contact with a wafer substrate.
The hard abrasive grains of the hard abrasive tip 33 are alumina, silicon carbide, cubic boron nitride or diamond, and the radius of curvature of the hard abrasive grains is 50-500 μm, such as a diamond hard abrasive tip with a radius of curvature of 200 μm; the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond, and the diameter of the wafer substrate is 50.8-152.4mm.
The implementation method of the implementation device for the tribochemical reaction of the abrasive and the wafer substrate comprises the following steps:
step 1, installing a pool bottom on a main shaft, and fixing a pool inner shell and a pool outer shell on the pool bottom;
step 2, fixing a sample table fixedly provided with a wafer substrate on a switching disc, and fixing the switching disc on a main shaft;
Step 3, installing a pool cover, a cover plate and a clamping module, wherein the clamping module 30 is manually controlled to descend, and a diamond hard abrasive pressing head 33 penetrates through an inner hole of the fixed ring 27 to descend to a position about 5mm away from the upper part of the wafer substrate;
And 4, loading the device with a load of 0.3-1N, a scratching speed of 500-3000rpm, a flow rate of 300-900mL/min of lubricating liquid, and a set temperature of 20-90 ℃ in a scratching experiment. Specifically: the loading device is set to 0.5N, the rotating speed of the main shaft 11 is set to 2000rpm, the eccentricity of the diamond pressing head 33 and the center point of silicon carbide is set to 20mm, and the scratching time is set to 60s; the flow rate of the injected lubricating liquid is 600mL/min, the temperature of the sample table 12 is controlled at 60 ℃, and the temperature control precision is +/-0.5 ℃; the hard abrasive pressing head is scratched on the surface of the wafer substrate; wherein: after the scratch parameters are set, the force sensor is set to automatically descend, and the system starts to operate when the pressure reaches the set value.
And 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the chemical composition change of the scratch position of the wafer substrate on a scanning probe micro-Raman spectrometer. As shown in fig. 6, two steamed bread peaks appear at 965cm -1 and 975cm -1 from the raman spectrum, and the corresponding chemical components are amorphous silicon oxide and amorphous silicon carbide respectively, which indicates that the diamond abrasive and the silicon carbide wafer undergo a tribochemical reaction induced by mechanical force under the condition that deionized water is only used as a lubricating liquid, the monocrystalline silicon carbide is subjected to amorphization transformation, and then the amorphized silicon carbide and the deionized water undergo chemical reaction to generate the amorphized silicon oxide.
The scanning probe microscopic Raman spectrometer is a device which is formed by combining a WITEC atomic force microscope and a Raman spectrometer, and can realize in-situ detection of the surface morphology and chemical components at the scratch position.
The foregoing description is only illustrative of the preferred embodiments of the present invention, and therefore should not be taken as limiting the scope of the invention, for all changes and modifications that come within the meaning and range of equivalency of the claims and specification are therefore intended to be embraced therein.
Claims (10)
1. The device for realizing the tribochemical reaction between the abrasive and the wafer substrate is characterized in that: the device comprises a main shaft module, a liquid pool module and a clamping module;
the spindle module comprises a spindle, a switching disc, a sample table for fixing a wafer substrate thereon and a heater for heating the sample table, wherein the switching disc is fixedly arranged on the spindle, the sample table is fixedly arranged on the switching disc, and the sample table is driven to rotate by the spindle;
The liquid pool module comprises a liquid pool, a cover plate, a fixed ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom provided with a mounting through hole, a pool inner shell, a pool outer shell and a pool cover provided with a sample port; the inner tank shell and the outer tank shell are fixedly arranged on the tank bottom at intervals, the inner tank shell surrounds the mounting through holes, the tank cover is fixedly arranged on the outer tank shell, the tank cover and Chi Nake are arranged at intervals, and the liquid tank is provided with a liquid outlet; the cover plate is fixedly connected to the pool cover and is covered with the sample port, the fixing ring is fixedly arranged on the cover plate, the liquid inlet pipe is arranged in the fixing ring, and the lower port of the liquid inlet pipe corresponds to the annular interval between the inner pool shell and the outer pool shell so as to inject lubricating liquid into the pool; the spindle can be rotatably sealed and installed in the installation through hole, the adapter plate can be rotatably supported on the inner shell of the liquid pool, and the adapter plate, the wafer substrate and the sample table are positioned in the liquid pool;
The clamping module comprises a loading device, a sample clamping rod and a hard abrasive pressing head, wherein the sample clamping rod is arranged in a fixed ring, the hard abrasive pressing head is fixedly arranged at the lower end of the sample clamping rod, and the loading device is connected with the sample clamping rod and applies pressure to the sample clamping rod so that the hard abrasive pressing head is in contact with a wafer substrate.
2. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: a sealing ring is arranged between the sample table and the adapter plate.
3. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 2, wherein: a mounting cavity is formed between the sample table and the adapter plate, and the heater is mounted in the mounting cavity.
4. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the spindle module comprises a temperature control device which is matched with the sample table and is connected with the heater.
5. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the lower port of the liquid inlet pipe corresponds to the outer periphery of the sample stage.
6. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the inner tank shell comprises a lower inner tank shell and an upper Chi Nake, wherein the lower inner tank shell is fixedly arranged on the tank bottom, and the upper inner tank shell fixedly surrounds the lower inner tank shell.
7. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the lubricating liquid is neutral deionized water.
8. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the hard abrasive particles of the hard abrasive pressure head are alumina, silicon carbide, cubic boron nitride or diamond, and the curvature radius of the hard abrasive particles is 50-500 mu m.
9. The apparatus for effecting a tribochemical reaction between an abrasive and a wafer substrate as recited in claim 1, wherein: the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond, and the diameter of the wafer substrate is 50.8-152.4mm.
10. The method for realizing the tribochemical reaction between the abrasive and the wafer substrate according to claim 1, wherein: comprising the following steps:
step 1, installing a pool bottom on a main shaft, and fixing a pool inner shell and a pool outer shell on the pool bottom;
step 2, fixing a sample table fixedly provided with a wafer substrate on a switching disc, and fixing the switching disc on a main shaft;
step 3, installing a pool cover, a cover plate and a clamping module;
Step 4, setting the load of the loading device and the speed of the main shaft, respectively controlling the lubrication condition and the temperature through the injected lubrication liquid and the heater, and scratching the surface of the wafer substrate by the hard abrasive pressing head;
And 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the chemical composition change of the scratch position of the wafer substrate on a scanning probe micro-Raman spectrometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110378440.0A CN113084694B (en) | 2021-04-08 | 2021-04-08 | Device and method for realizing tribochemical reaction between abrasive and wafer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110378440.0A CN113084694B (en) | 2021-04-08 | 2021-04-08 | Device and method for realizing tribochemical reaction between abrasive and wafer substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113084694A CN113084694A (en) | 2021-07-09 |
| CN113084694B true CN113084694B (en) | 2024-08-27 |
Family
ID=76675304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110378440.0A Active CN113084694B (en) | 2021-04-08 | 2021-04-08 | Device and method for realizing tribochemical reaction between abrasive and wafer substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113084694B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022199193A1 (en) | 2021-03-25 | 2022-09-29 | 华侨大学 | Method for detecting interfacial frictional chemical reaction between abrasive grains and diamond wafer substrate |
| CN115274478B (en) * | 2022-07-05 | 2024-06-07 | 华侨大学 | Device and method for realizing interface chemical reaction between hard abrasive and substrate at nanoscale |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN214923387U (en) * | 2021-04-08 | 2021-11-30 | 华侨大学 | Device for realizing abrasive and wafer substrate tribochemical reaction |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6243009B2 (en) * | 2014-03-31 | 2017-12-06 | 株式会社ノリタケカンパニーリミテド | Polishing method of GaN single crystal material |
| CN109648463B (en) * | 2018-12-14 | 2021-04-23 | 厦门大学 | A kind of semiconductor wafer photoelectrochemical mechanical polishing processing method |
-
2021
- 2021-04-08 CN CN202110378440.0A patent/CN113084694B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN214923387U (en) * | 2021-04-08 | 2021-11-30 | 华侨大学 | Device for realizing abrasive and wafer substrate tribochemical reaction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113084694A (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113084694B (en) | Device and method for realizing tribochemical reaction between abrasive and wafer substrate | |
| CN105328516B (en) | The dynamic magnetic field of magnetic rheologic flexible polishing pad is from sharp burnishing device and its polishing method | |
| CN214923387U (en) | Device for realizing abrasive and wafer substrate tribochemical reaction | |
| CN107617933B (en) | Dynamic magnetic field magnetorheological polishing device | |
| CN103107110A (en) | Chip observation sample manufacture method and system | |
| CN104551871A (en) | Lithium tantalate wafer grinding method | |
| CN109822429A (en) | Vibration Polisher for Preparation of Metal Electron Backscatter Diffraction Specimens | |
| WO2014034921A1 (en) | Machining method and machining device | |
| Xu et al. | The research of reactivity between nano-abrasives and sapphire during polishing process | |
| CN220362405U (en) | Grinding device for grinding SiC with low damage | |
| CN207464836U (en) | A kind of dynamic magnetic field magnetorheological finishing device | |
| CN208375010U (en) | A kind of face contact type liquid metal plane polishing device | |
| Rogov et al. | A study of intensity of tribochemical contact interaction between a polishing compound and sapphire in machining | |
| CN115274478B (en) | Device and method for realizing interface chemical reaction between hard abrasive and substrate at nanoscale | |
| CN214980481U (en) | Clamping device for preparing diamond-metal high-temperature solid-state interface reaction samples | |
| CN114274040B (en) | Silicon carbide grinding equipment | |
| US11982650B2 (en) | Method for testing interfacial tribochemical reaction between abrasive and diamond wafer | |
| CN101224553B (en) | Ultra-high-speed polishing method of diamond film under the assistance of rare earth metals | |
| CN115213811B (en) | Carrier for light-assisted chemical mechanical polishing and polishing processing method | |
| CN201225969Y (en) | Transmission electric mirror sample chemical thinning clamper | |
| CN222038009U (en) | A ceramic sheet multi-piece grinding tool | |
| Wu et al. | Global flattening realization and kinematic analysis of UV-assisted low-speed 3D dynamic friction-polished diamonds | |
| CN112091806A (en) | Chemically assisted rheological polishing method for zirconia ceramic hemisphere | |
| US11999027B2 (en) | Method for polishing semiconductor substrate | |
| US11772227B2 (en) | Device and methods for chemical mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |