CN113084694A - Device and method for realizing abrasive and wafer substrate tribochemical reaction - Google Patents
Device and method for realizing abrasive and wafer substrate tribochemical reaction Download PDFInfo
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- CN113084694A CN113084694A CN202110378440.0A CN202110378440A CN113084694A CN 113084694 A CN113084694 A CN 113084694A CN 202110378440 A CN202110378440 A CN 202110378440A CN 113084694 A CN113084694 A CN 113084694A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16N—LUBRICATING
- F16N15/00—Lubrication with substances other than oil or grease; Lubrication characterised by the use of particular lubricants in particular apparatus or conditions
- F16N15/04—Lubrication with substances other than oil or grease; Lubrication characterised by the use of particular lubricants in particular apparatus or conditions with water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
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Abstract
本发明公开了磨料与晶圆衬底摩擦化学反应的实现装置及其实现方法，实现装置包括主轴模块、液池模块及装夹模块；该主轴模块包括主轴、转接盘、供晶圆衬底固设其上的样品台和加热器；该液池模块包括液池、盖板、固定环及进液管，该液池包括设有安装通孔的池底、池内壳、池外壳和设有样品口的池盖；该装夹模块包括加载装置、样品夹杆和硬质磨料压头。它具有如下优点：通过硬质磨料压头与晶圆衬底的划擦实验，还原加工过程中划擦速度、载荷、温度和润滑状态，进而研究硬质磨粒与晶圆之间的界面作用关系，有助于揭示硬质磨料与晶圆衬底界面摩擦化学反应的作用机制，在半导体晶圆衬底的高效超精密加工领域具有良好的应用前景，且装置简单、操作方便。
The invention discloses a realization device and a realization method of the tribochemical reaction between abrasives and a wafer substrate. The realization device includes a spindle module, a liquid pool module and a clamping module; the spindle module includes a spindle, a transfer plate, and a wafer substrate supply. A sample stage and a heater are fixed on it; the liquid pool module includes a liquid pool, a cover plate, a fixing ring and a liquid inlet pipe, and the liquid pool includes a pool bottom provided with an installation through hole, a pool inner shell, a pool outer shell and a pool with Cell cover for the sample port; this clamping module includes the loading device, sample clamp rod, and hard abrasive indenter. It has the following advantages: through the scratching experiment between the hard abrasive indenter and the wafer substrate, the scratching speed, load, temperature and lubrication state during the processing are restored, and then the interface between the hard abrasive particles and the wafer is studied. The relationship is helpful to reveal the action mechanism of the tribochemical reaction between the hard abrasive and the wafer substrate interface, and has a good application prospect in the field of efficient ultra-precision machining of semiconductor wafer substrates, and the device is simple and easy to operate.
Description
Technical Field
The invention relates to a device and a method for realizing a tribochemical reaction between an abrasive and a wafer substrate.
Background
With the rapid development of new energy automobiles and 5G technologies, semiconductor materials are continuously developed towards high frequency, high power, high thermal conductivity and the like. At present, the traditional semiconductor power device represented by monocrystalline silicon gradually reaches the material development limit, and the working requirements of the semiconductor device under the conditions of high frequency, high temperature, high power, high energy efficiency, severe environment resistance and the like are difficult to meet. Silicon carbide, gallium nitride and the like are representative novel semiconductor materials, and by virtue of their excellent properties, they will be developed into mainstream semiconductor materials for manufacturing high-performance electronic devices. However, the ultra-high hardness, extreme brittleness, and extreme corrosion resistance of the new semiconductor materials make them difficult to process. The ultra-precision polishing technology of novel semiconductor materials continues to use the traditional chemical mechanical polishing technology of silicon wafers. Because the hardness and the corrosion resistance of novel semiconductor materials such as silicon carbide, gallium nitride and the like are far higher than those of silicon wafers, the processing efficiency is low, the cost is high, and meanwhile, the problem of environmental pollution caused by a mechanochemical polishing technology is increasingly prominent. Therefore, the interface action process of the abrasive particles and the wafer is deeply analyzed, the abrasive particle polishing and removing mechanism of the novel semiconductor wafer is facilitated to be mastered, and efficient ultra-precise nondestructive processing of the novel semiconductor wafer is further realized. The traditional research means of the interface friction effect of the abrasive particles and the wafer substrate is mainly realized by means of a nano indentation scratch instrument, however, the nano indentation scratch instrument has low load (mN magnitude), small speed (mum/s magnitude), no temperature control device and lubricating liquid module, and is greatly different from the real processing environment, so that the interface friction effect of the abrasive particles and the wafer substrate in the processing process is difficult to effectively research.
Disclosure of Invention
The invention provides a device and a method for realizing the tribochemical reaction between an abrasive and a wafer substrate, which overcome the defects in the background technology.
One of the technical schemes adopted by the invention for solving the technical problems is as follows: the device for realizing the friction chemical reaction between the abrasive and the wafer substrate comprises a main shaft module, a liquid pool module and a clamping module;
the main shaft module comprises a main shaft, an adapter plate, a sample table for fixing the wafer substrate on the adapter plate and a heater for heating the sample table, wherein the adapter plate is fixedly arranged on the main shaft;
the liquid pool module comprises a liquid pool, a cover plate, a fixing ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom provided with an installation through hole, a pool inner shell, a pool outer shell and a pool cover provided with a sample port; the pool inner shell and the pool outer shell are fixed on the pool bottom at intervals inside and outside, the pool inner shell surrounds the installation through hole, the pool cover is fixed on the pool outer shell, the pool cover and the pool inner shell are arranged at intervals, and the liquid pool is provided with a liquid outlet; the cover plate is fixedly connected to the pool cover and covers the sample port, the fixing ring is fixedly arranged on the cover plate, the liquid inlet pipe is arranged in the fixing ring, and the lower port of the liquid inlet pipe corresponds to the annular interval between the inner pool shell and the outer pool shell so as to inject lubricating liquid into the liquid pool; the main shaft can be rotatably and hermetically arranged in the mounting through hole, the adapter plate can be rotatably supported in the inner tank shell, and the adapter plate, the wafer substrate and the sample table are positioned in the liquid tank;
the clamping module comprises a loading device, a sample clamping rod and a hard abrasive pressure head, wherein the sample clamping rod is arranged in a fixed ring, the hard abrasive pressure head is fixedly arranged at the lower end of the sample clamping rod, and the loading device is connected with the sample clamping rod and applies pressure to the sample clamping rod so as to enable the hard abrasive pressure head to be contacted with the wafer substrate.
In one embodiment: a sealing ring is arranged between the sample stage and the switching disc.
In one embodiment: an installation cavity is formed between the sample stage and the adapter plate, and the heater is installed in the installation cavity.
In one embodiment: the main shaft module comprises a temperature control device which is matched with the sample table and connected with a heater.
In one embodiment: the lower port of the liquid inlet pipe corresponds to the periphery of the sample table.
In one embodiment: the inner shell of the pool comprises a lower inner shell and an upper inner shell, the lower inner shell is fixedly arranged on the bottom of the pool, and the upper inner shell fixedly surrounds the lower inner shell.
In one embodiment: the lubricating liquid is neutral deionized water.
In one embodiment: the hard abrasive particles of the hard abrasive indenter are alumina, silicon carbide, cubic boron nitride or diamond, and the curvature radius of the hard abrasive particles is 50-500 mu m.
In one embodiment: the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond and the wafer substrate diameter is 50.8-152.4 mm.
The second technical scheme adopted by the invention for solving the technical problems is as follows: the method for realizing the device for realizing the friction chemical reaction between the abrasive and the wafer substrate comprises the following steps:
step 2, fixing a sample table fixedly provided with a wafer substrate on an adapter plate, and fixing the adapter plate on a main shaft;
step 3, installing a pool cover, a cover plate and a clamping module;
step 4, setting the load of the loading device and the speed of the main shaft, respectively controlling the lubricating condition and the temperature through the injected lubricating liquid and the heater, and scratching the surface of the wafer substrate by the hard abrasive pressure head;
and 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the change of chemical components at the scratch position of the surface of the wafer substrate on a scanning probe micro-Raman spectrometer.
Compared with the background technology, the technical scheme has the following advantages:
through the scratching experiment of the hard abrasive pressure head and the wafer substrate, the scratching speed, the load, the temperature and the lubricating state in the processing process are reduced, the interface action relation between hard abrasive particles and the wafer is further researched, the action mechanism of the interface friction chemical reaction between the hard abrasive and the wafer substrate is facilitated to be disclosed, and the device has a good application prospect in the field of efficient and ultra-precise processing of the semiconductor wafer substrate, and is simple and convenient to operate.
The liquid pool module includes the liquid pool, the apron, solid fixed ring and feed liquor pipe, the liquid pool includes the bottom of the pool, the pond inner shell, pond shell and pond lid, pond inner shell and pond shell inside and outside interval ground set firmly on the bottom of the pool, the pond lid sets firmly on the pond shell and pond lid and pond shell interval arrangement, the liquid pool is equipped with the liquid outlet, the apron rigid coupling is on the pond lid and the lid connects the sample mouth, solid fixed ring adorns at the apron admittedly, the feed liquor pipe is installed in the fixed ring and the feed liquor pipe under the port correspond the annular interval of pond inner shell and pond shell in order to pour into lubricating liquid into in the liquid pool, lubricating liquid can the intensive lubrication.
An installation cavity is formed between the sample table and the adapter plate, and the heater is installed in the installation cavity, so that the structure is compact.
The lower port of the liquid inlet pipe corresponds to the peripheral part of the sample table and provides a lubricating effect.
The lubricating liquid is neutral deionized water, and provides a lubricating effect.
The hard abrasive particles of the hard abrasive indenter are alumina, silicon carbide, cubic boron nitride or diamond, the curvature radius of the hard abrasive particles is 50-500 mu m, the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond, and the diameter of the wafer substrate is 50.8-152.4mm, so that a lubricating effect is provided.
Drawings
The invention is further described with reference to the following figures and detailed description.
FIG. 1 is a perspective view of an embodiment of an implementation.
FIG. 2 is a schematic top view of an embodiment of an implementation.
Fig. 3 is a schematic sectional view taken along line a-a of fig. 2.
Figure 4 is one of the schematic diagrams in perspective cut-away of an embodiment of an implementation.
Fig. 5 is a second perspective cut-away schematic view of an embodiment of an implementation apparatus.
Fig. 6 is a schematic view of a surface state of a scratched wafer substrate at a scratch on the surface of the wafer substrate observed by a scanning probe micro-raman spectrometer.
Description of reference numerals:
the device comprises a main shaft module 10, a main shaft 11, a sample table 12, an adapter plate 13 and a sealing ring 14.
A clamping module 30, a loading device, a sample clamping rod 32 and a hard abrasive head 33.
Detailed Description
Referring to fig. 1 to 5, the apparatus for implementing a tribochemical reaction between an abrasive and a wafer substrate includes a spindle module 10, a liquid bath module 20, and a clamping module 30.
The main shaft module 10 comprises a main shaft 11, an adapter plate 13, a sample table 12 and a heater for heating the sample table 12, wherein the adapter plate 13 is fixed on the main shaft 11 through three threaded connections, the sample table 12 is fixed on the adapter plate 13 through three threaded connections, and the main shaft 11 drives the sample table 12 to rotate at a high speed. Wherein: a wafer substrate such as a 50.8mm single crystal silicon carbide wafer sample is adhered to the sample stage 12 using a hot melt adhesive; an installation cavity is formed between the sample table 12 and the adapter plate 13, a sealing ring 14 is arranged between the sample table 12 and the adapter plate 13 to seal the installation cavity, and lubricating liquid is prevented from entering the main shaft through the sealing ring. The heater is arranged in the installation cavity, and the heater is a resistance wire; the spindle module 10 includes a temperature control device, which is coupled to the sample stage and connected to a heater to control the temperature.
The liquid pool module 20 comprises a liquid pool, a cover plate 26, a fixing ring 27 and a liquid inlet pipe 29, wherein the liquid pool comprises a pool bottom 21 provided with a mounting through hole, a pool inner shell, a pool outer shell 22 and a pool cover 25 provided with a sample port; the inner and outer tank shells 22 and 22 are fixed on the tank bottom 21 at intervals, the inner tank shell surrounds the installation through hole, the tank cover 25 is fixed on the outer tank shell 22, the tank cover 25 and the inner tank shell are arranged at intervals, and the tank bottom 21 is provided with a liquid outlet 28; in a specific structure, the inner tank shell comprises a lower inner tank shell 23 and an upper inner tank shell 24, the lower inner tank shell 23 is fixedly arranged on the tank bottom 21, and the upper inner tank shell 24 fixedly surrounds the lower inner tank shell 23. This apron 26 rigid coupling just covers on the pond lid 25 and connects the sample mouth, and this solid fixed ring 27 is adorned at apron 26 admittedly, and this feed liquor pipe 29 is installed in solid fixed ring 27 and feed liquor pipe 29 lower port corresponds the annular interval of pond inner shell and pond shell in order to inject lubricated liquid into the liquid pool, and in the concrete structure, this feed liquor pipe lower port corresponds sample platform peripheral part, and this lubricated liquid is neutral deionized water, and PH equals 7.
The main shaft 11 can be rotatably and hermetically installed in the installation through hole, the adapter plate 13 can be rotatably supported in the inner shell of the cell, the adapter plate 13, the wafer substrate and the sample table 12 are positioned in the liquid cell, and lubricating liquid in the liquid cell circulates.
The clamping module 30 includes a loading device, a sample clamping rod 32 and a hard abrasive head 33, the sample clamping rod is mounted in a retaining ring, the hard abrasive head is fixedly mounted at the lower end of the sample clamping rod, and the loading device is connected to the sample clamping rod and applies pressure to the sample clamping rod to make the hard abrasive head contact with the wafer substrate.
The hard abrasive particles of the hard abrasive indenter 33 are alumina, silicon carbide, cubic boron nitride or diamond, and the curvature radius of the hard abrasive particles is 50-500 μm, for example, the curvature radius of the diamond hard abrasive indenter is 200 μm; the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond and the wafer substrate diameter is 50.8-152.4 mm.
The method for realizing the device for realizing the friction chemical reaction between the abrasive and the wafer substrate comprises the following steps:
step 2, fixing a sample table fixedly provided with a wafer substrate on an adapter plate, and fixing the adapter plate on a main shaft;
step 3, installing a pool cover, a cover plate and a clamping module, wherein the clamping module 30 is manually controlled to descend, and a diamond hard abrasive pressure head 33 penetrates through an inner hole of the fixing ring 27 and descends to a position which is about 5mm away from the upper part of the wafer substrate;
and step 4, the load of the loading device is 0.3-1N, the scratching speed is 500-. Specifically, the method comprises the following steps: setting the loading device to be 0.5N, setting the rotating speed of the main shaft 11 to be 2000rpm, setting the eccentricity between the diamond pressure head 33 and the central point of the silicon carbide to be 20mm, and setting the scratching time to be 60 s; the flow rate of injected lubricating liquid is 600mL/min, the temperature of the sample table 12 is controlled at 60 ℃, and the temperature control precision is +/-0.5 ℃; scratching a hard abrasive pressing head on the surface of the wafer substrate; wherein: after the scratching parameters are set, the force sensor is set to automatically descend, and the system starts to operate when the pressure reaches a set value.
And 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the change of chemical components at the scratch position of the surface of the wafer substrate on a scanning probe micro-Raman spectrometer. As a result, as shown in FIG. 6, 965cm was found in the Raman spectrum-1And 975cm-1Two steamed bun peaks appear, and the corresponding chemical components are respectively amorphous silicon oxide and amorphous silicon carbide, which shows that the diamond abrasive and the silicon carbide wafer generate a tribochemical reaction induced by mechanical force under the condition of only using deionized water as lubricating liquid, the monocrystalline silicon carbide is subjected to non-crystallization transformation under stress, and then the non-crystallized silicon carbide and the deionized water generate a chemical reaction to generate the non-crystallized silicon oxide.
The scanning probe micro-Raman spectrometer is a device combining an atomic force microscope (WITEC) and a Raman spectrometer, and can realize in-situ detection of the surface appearance and the chemical components at the scratch.
The above description is only a preferred embodiment of the present invention, and therefore should not be taken as limiting the scope of the invention, which is defined by the appended claims and their equivalents.
Claims (10)
1. The device for realizing the tribochemical reaction between the abrasive and the wafer substrate is characterized in that: the device comprises a main shaft module, a liquid pool module and a clamping module;
the main shaft module comprises a main shaft, an adapter plate, a sample table for fixing the wafer substrate on the adapter plate and a heater for heating the sample table, wherein the adapter plate is fixedly arranged on the main shaft;
the liquid pool module comprises a liquid pool, a cover plate, a fixing ring and a liquid inlet pipe, wherein the liquid pool comprises a pool bottom provided with an installation through hole, a pool inner shell, a pool outer shell and a pool cover provided with a sample port; the pool inner shell and the pool outer shell are fixed on the pool bottom at intervals inside and outside, the pool inner shell surrounds the installation through hole, the pool cover is fixed on the pool outer shell, the pool cover and the pool inner shell are arranged at intervals, and the liquid pool is provided with a liquid outlet; the cover plate is fixedly connected to the pool cover and covers the sample port, the fixing ring is fixedly arranged on the cover plate, the liquid inlet pipe is arranged in the fixing ring, and the lower port of the liquid inlet pipe corresponds to the annular interval between the inner pool shell and the outer pool shell so as to inject lubricating liquid into the liquid pool; the main shaft can be rotatably and hermetically arranged in the mounting through hole, the adapter plate can be rotatably supported in the inner tank shell, and the adapter plate, the wafer substrate and the sample table are positioned in the liquid tank;
the clamping module comprises a loading device, a sample clamping rod and a hard abrasive pressure head, wherein the sample clamping rod is arranged in a fixed ring, the hard abrasive pressure head is fixedly arranged at the lower end of the sample clamping rod, and the loading device is connected with the sample clamping rod and applies pressure to the sample clamping rod so as to enable the hard abrasive pressure head to be contacted with the wafer substrate.
2. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: a sealing ring is arranged between the sample stage and the switching disc.
3. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 2, characterized in that: an installation cavity is formed between the sample stage and the adapter plate, and the heater is installed in the installation cavity.
4. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the main shaft module comprises a temperature control device which is matched with the sample table and connected with a heater.
5. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the lower port of the liquid inlet pipe corresponds to the periphery of the sample table.
6. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the inner shell of the pool comprises a lower inner shell and an upper inner shell, the lower inner shell is fixedly arranged on the bottom of the pool, and the upper inner shell fixedly surrounds the lower inner shell.
7. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the lubricating liquid is neutral deionized water.
8. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the hard abrasive particles of the hard abrasive indenter are alumina, silicon carbide, cubic boron nitride or diamond, and the curvature radius of the hard abrasive particles is 50-500 mu m.
9. The apparatus for realizing abrasive material and wafer substrate tribochemical reaction according to claim 1, characterized in that: the wafer substrate is sapphire, silicon carbide, gallium nitride or diamond and the wafer substrate diameter is 50.8-152.4 mm.
10. The method for realizing the abrasive material and wafer substrate tribochemical reaction as claimed in claim 1, wherein: the method comprises the following steps:
step 1, mounting a pool bottom on a main shaft, and fixing an inner pool shell and an outer pool shell on the pool bottom;
step 2, fixing a sample table fixedly provided with a wafer substrate on an adapter plate, and fixing the adapter plate on a main shaft;
step 3, installing a pool cover, a cover plate and a clamping module;
step 4, setting the load of the loading device and the speed of the main shaft, respectively controlling the lubricating condition and the temperature through the injected lubricating liquid and the heater, and scratching the surface of the wafer substrate by the hard abrasive pressure head;
and 5, taking down the scratched wafer substrate, and observing the surface state of the scratched wafer substrate and the change of chemical components at the scratch position of the surface of the wafer substrate on a scanning probe micro-Raman spectrometer.
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| CN202110378440.0A CN113084694B (en) | 2021-04-08 | 2021-04-08 | Device and method for realizing tribochemical reaction between abrasive and wafer substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274478A (en) * | 2022-07-05 | 2022-11-01 | 华侨大学 | Device and method for realizing interface chemical reaction of hard abrasive and substrate under nanoscale |
| JP7593690B2 (en) | 2021-03-25 | 2024-12-03 | 華僑大学 | Method for detecting tribochemical reactions at the interface between abrasive grains and diamond wafer substrate |
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| CN214923387U (en) * | 2021-04-08 | 2021-11-30 | 华侨大学 | Device for realizing abrasive and wafer substrate tribochemical reaction |
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| US20170100815A1 (en) * | 2014-03-31 | 2017-04-13 | Noritake Co., Limited | Method for polishing gan single crystal material |
| CN109648463A (en) * | 2018-12-14 | 2019-04-19 | 厦门大学 | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing method |
| CN214923387U (en) * | 2021-04-08 | 2021-11-30 | 华侨大学 | Device for realizing abrasive and wafer substrate tribochemical reaction |
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| JP7593690B2 (en) | 2021-03-25 | 2024-12-03 | 華僑大学 | Method for detecting tribochemical reactions at the interface between abrasive grains and diamond wafer substrate |
| CN115274478A (en) * | 2022-07-05 | 2022-11-01 | 华侨大学 | Device and method for realizing interface chemical reaction of hard abrasive and substrate under nanoscale |
| CN115274478B (en) * | 2022-07-05 | 2024-06-07 | 华侨大学 | Device and method for realizing interface chemical reaction between hard abrasive and substrate at nanoscale |
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