CN112871853B - Cleaning method of porous sucker - Google Patents
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- CN112871853B CN112871853B CN202110039308.7A CN202110039308A CN112871853B CN 112871853 B CN112871853 B CN 112871853B CN 202110039308 A CN202110039308 A CN 202110039308A CN 112871853 B CN112871853 B CN 112871853B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000012535 impurity Substances 0.000 claims abstract description 106
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- 238000002791 soaking Methods 0.000 claims description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 15
- 239000011230 binding agent Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005275 alloying Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a cleaning method of a porous sucker, which relates to the technical field of semiconductor preparation and specifically comprises the following steps: cleaning inorganic impurities on the surface of the porous sucker by using a first cleaning solution; and after cleaning the inorganic impurities on the surface of the porous sucking disc, cleaning the organic impurities in the holes of the porous sucking disc by using a second cleaning solution. Compared with the prior art, the cleaning method of the porous sucker provided by the invention has the advantages that firstly, inorganic impurities attached to the surface of the porous sucker are cleaned, then, organic impurities in holes of the porous sucker are cleaned, and the porous sucker is completely cleaned through layering treatment of the inorganic impurities and the organic impurities.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a cleaning method of a porous sucker.
Background
In the manufacturing process of the semiconductor chip, a temporary bonding technology is used for thinning the chip to a certain thickness, and the bonded Wafer is subjected to debonding to separate the semiconductor Wafer and the substrate after thinning. The semiconductor Wafer with the thickness of 100um is absorbed by the porous sucker during the bonding process, and the bonding adhesive and the metal on the bonding Wafer are remained on the porous sucker during the process operation. The residual organic binder impurities are in a completely liquid state at 120 ℃ and are easily absorbed into the pores of the porous chuck, and the inorganic metal particles (such as Ni-AuGe alloy) are usually attached to the surface layer of the porous chuck. The organic binder is liquefied in a heating state, and flows into holes of the porous sucker under the influence of vacuum adsorption force, metal particles can be alloyed in an extension stretching mode to a certain degree in the heating state, the binding force of alloying metal can be enhanced, so that the organic binder exists in the holes and on the surface of the porous sucker, and the alloying metal covers the surface of the organic binder and wraps the organic binder. The residues affect the surface smoothness of the porous sucker, the metal layer can scratch a semiconductor wafer when the porous sucker is used, the chip manufacturing yield is reduced, and organic binders can cause pollution to the surface of the wafer and can not take the wafer down from the porous sucker, so that the process flow can not continue.
The surface smoothness of the porous sucker produced at present is required to be in a nanometer level, so that the sintering pore diameter is required to be small, and the traditional cleaning mode adopts acetone cleaning, so that the requirement of completely cleaning the surface and the holes of the porous sucker with small pore diameter cannot be met.
Disclosure of Invention
The invention aims to provide a cleaning method of a porous sucker, which solves the technical problem that the conventional mode cannot meet the requirement of completely cleaning the surface and the holes of the porous sucker.
The invention provides a cleaning method of a porous sucker, which comprises the following steps:
cleaning inorganic impurities on the surface of the porous sucker by using a first cleaning solution;
and after cleaning the inorganic impurities on the surface of the porous sucking disc, cleaning the organic impurities in the holes of the porous sucking disc by using a second cleaning solution.
Further, the step of cleaning the inorganic impurities on the surface of the porous chuck with the first cleaning solution comprises:
the reaction was carried out using HCl: h2O2：H2O ═ 1 to 2: (1-2): (1-5) soaking and cleaning the porous sucker to be cleaned for at least 20min by using the solution prepared according to the proportion.
Further, with HCl: h2O2：H2O is 1:1: the solution with the proportion of 1 is used for soaking and cleaning the porous sucker to be cleaned for 25-35 min.
And further, softening the organic impurities in the holes of the porous sucker by using a third cleaning solution before the step of cleaning the organic impurities in the holes of the porous sucker by using the second cleaning solution.
Further, the step of softening the organic impurities in the holes of the porous suction cup comprises:
and soaking the porous sucking disc for removing the inorganic impurities for 20-30 min by using an NMP solution at the temperature of 75-85 ℃.
Further, the step of cleaning the organic impurities in the holes of the porous chuck with a third cleaning solution includes:
cleaning organic impurities in the holes of the softened porous sucker for 5-10 min by using acetone;
and cleaning organic impurities in the holes of the porous sucking disc for 5-10 min by using isopropanol.
Further, cleaning organic impurities in the holes of the softened porous sucker for 5min by using acetone;
and then washing organic impurities in the holes of the porous sucking disc for 5min by using isopropanol.
And further cleaning the porous sucker for 10-20 min by adopting pure water ultrasonic waves with the frequency of 1-5 MHz after the step of cleaning the organic impurities in the holes of the porous sucker by using the second cleaning solution.
Further, the method also comprises the step of drying the porous sucker cleaned by the pure water ultrasonic wave.
Further, drying the porous sucker cleaned by the ultrasonic wave of the pure water for 20-30 min at 100-120 ℃.
The invention provides a cleaning method of a porous sucker, which comprises the following steps: cleaning inorganic impurities on the surface of the porous sucker by using a first cleaning solution; and after cleaning the inorganic impurities on the surface of the porous sucking disc, cleaning the organic impurities in the holes of the porous sucking disc by using a second cleaning solution.
Compared with the prior art, the cleaning method of the porous sucker provided by the invention has the advantages that firstly, the first cleaning solution is used for cleaning inorganic impurities attached to the surface of the porous sucker, then, the second cleaning solution is used for cleaning organic impurities in holes of the porous sucker, and the inorganic impurities and the organic impurities are subjected to layering treatment, so that the cleaning effect of the porous sucker is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a distribution diagram of inorganic impurities and organic impurities on a porous chuck;
FIG. 2 is a flow chart of a method for cleaning a multi-hole chuck according to an embodiment of the present invention.
Icon: 100-a porous chuck; 101-holes; 200-inorganic impurities; 300-organic impurities.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, when the porous chuck 100 sucks a semiconductor wafer, the binder of the organic impurities 300 in the debonding and heating process is liquefied in a heating state, and is affected by the adsorption force and flows into the holes 101 of the porous chuck 100, while the metal particles of the inorganic impurities 200 are subjected to stretching alloying in a certain degree in the heating state, the binding force of the alloying metal is enhanced, and the alloying metal covers the surface of the organic binder and wraps the organic binder, whereas the conventional method adopts acetone cleaning, and the binder is wrapped by the alloying metal, so the cleaning effect is poor, and the cleaning cannot be thorough.
As shown in fig. 2, the method for cleaning the porous chuck 100 provided in this embodiment includes the following steps:
firstly, the inorganic impurities 200 on the surface of the porous suction cup 100 are cleaned by a first cleaning solution, and after the inorganic impurities on the surface of the porous suction cup 100 are cleaned, the organic impurities 300 in the holes 101 of the porous suction cup 100 are cleaned by a second cleaning solution.
In the method for cleaning the porous suction cup 100 according to this embodiment, the inorganic impurities 200 (i.e., alloying metal, generally Ni — AuGe) attached to the surface of the porous suction cup 100 are first cleaned, and then the organic impurities 300 (binder) in the holes 101 of the porous suction cup 100 are cleaned, so that the cleaning effect of the porous suction cup 100 is improved by layering the inorganic impurities 200 and the organic impurities 300, compared to the prior art.
It should be noted that since the organic impurities 300 are located in the holes 101 of the porous chuck 100 and are wrapped by the inorganic impurities 200 on the surface of the porous chuck 100, the cleaning sequence of the inorganic impurities 200 and the organic impurities 300 cannot be changed, and the porous chuck 100 can be cleaned only by removing the inorganic impurities 200 on the surface of the porous chuck 100 and then removing the organic impurities 300.
Further, the step of cleaning the inorganic impurities 200 on the surface of the porous chuck 100 using the first cleaning solution includes the steps of using HCl: h2O2：H2O ═ 1 to 2: (1-2): (1-5) soaking and cleaning the porous sucker 100 to be cleaned for at least 20min, preferably, the soaking and cleaning time can be 20 min-2H, and the surfaces of the porous sucker, the bonded substrate, the silicon wafer and the like can be cleaned. Note that HCl and H2O2And H2The proportion of O is volume ratio.
Specifically, there are many examples of cleaning with solutions of different compositions and ratios in the prior art, but most of them are for cleaning semiconductor wafers made of GaAs, H2O2GaAs is oxidized, and the concentration ratio of HCl: h2O2Will corrode the surface layer of the semiconductor wafer and destroy the surface layer structure, the conventional cleaning of the semiconductor wafer will adopt HCl: h2O2：H2O1: 1:64 at low concentration.
In addition, impurities of the semiconductor wafer are different from those of the porous chuck 100: while the impurities remained on the semiconductor wafer are organic and inorganic particles that are naturally and electrostatically adsorbed, the impurities of the porous chuck 100 of the present embodiment belong to the material used in the production, which is inefficiently transferred to the porous chuck 100 during the process production, and the organic impurities 300 in the holes 101 of the porous chuck 100 and the inorganic impurities 200 that are on the surface of the porous chuck 100 and wrap the organic impurities 300.
In this example, several solutions in the prior art were subjected to comparative experiments, and the experimental results are as follows:
comparison solution one: h2SO4：H2O2∶H2O is 1:1, and the Ni-AuGe can not be removed.
Comparative solution two: HNO3∶H2O2∶H2The ratio of O to 1:1 is generally used for removing residual polishing powder and polishing liquid on a semiconductor wafer, and the main component of the polishing powder or the polishing liquid is alumina, so that the Ni-AuGe alloy cannot be removed.
Comparative solution three: the nitric acid/hydrogen peroxide system can corrode the simple substance Ni, but has poor effect of removing the Ni-AuGe.
In this example, for HCl: h2O2：H2Experiments for removing the inorganic impurities 200 are carried out on the O mixed solution in different proportions, and the specific experimental results are as follows:
experiment one: with HCl: h2O2：H2O ═ 1: 2: 1, removing inorganic impurities 200, soaking for 5min until a large amount of inorganic impurities 200 on the surface are separated, continuously soaking for 30min, and observing by visual observation and a microscope to completely remove the inorganic impurities.
Experiment two: with HCl: h2O2：H2O is 2: 1:1, soaking for 5min for no obvious removal change, continuously soaking for 2H, and observing under a microscope to achieve the complete removal effect.
Experiment three: with HCl: h2O2：H2O is 1:1: 10, soaking for 2H was unchanged.
Experiment four: with HCl: h2O2：H2O is 1:1: 1, soaking for 30min, and sievingThe removal was complete under visual and microscopic observation.
Experiment five: with HCl: h2O2：H2O is 2: 2: 1, soaking for 2min (2 min) and most of the materials are completely separated, the removal speed is obviously improved, but the danger degree is high due to the fact that the solution is decomposed to release bubbles and generate a large amount of heat. Therefore, as can be seen from the above experiment, HCl: h2O2The removal rate and the removal effect can be improved by reducing the water concentration under the condition that the concentration ratio is not changed.
In addition, in H2Under the premise of unchanged O proportion, under the condition that HCl: h2O2I.e. HCl: h2O2Within the adjustment range of the concentration ratio, H2O2The oxidation speed of the Ni-AuGe alloy can be increased by properly increasing the concentration, and the removal effect can be improved.
As can be seen from the above, in H2And on the premise that the proportion of O is unchanged, HCl: h2O2Within the proportional interval of (3), increase H2O2The concentration of (2) can increase the removal speed of the inorganic impurities 200, thereby improving the cleaning efficiency; in the presence of HCl: h2O2When the concentration ratio is not changed, the cleaning time is required to be prolonged along with the increase of the water concentration, so that the cleaning effect can be improved.
Preferably, the reaction is carried out using HCl: h2O2：H2O ═ 1:1: the solution with the proportion of 1 is used for soaking and cleaning the porous sucker 100 to be cleaned for 25-35 min, preferably 30min, so that the surface of the porous sucker 100 used for production for a long time can be cleaned, and inorganic impurities 200 on the surface of the porous sucker 100 can be thoroughly removed.
Further, the method for cleaning the porous suction cup 100 further includes softening the organic impurities 300 in the holes 101 of the porous suction cup 100 with a third cleaning solution after cleaning the inorganic impurities 200 on the surface of the porous suction cup 100 with the first cleaning solution and before cleaning the organic impurities 300 in the holes 101 of the porous suction cup 100 with the second cleaning solution.
The porous sucker 100 is provided with a plurality of holes 101, and in order to realize that the surface smoothness of the porous sucker 100 used in the current production meets the requirement of nanometer level, the sizes of the holes 101 on the porous sucker are also very small, so that organic impurities 300 are adsorbed in the holes 101 and are very small, if the porous sucker 100 is directly cleaned, the cleaning time is longer firstly, and the production requirement of longer production rhythm cannot be met; in addition, the cleaning effect is not good, that is, part of the organic impurities 300 at the bottom of the hole can not be completely cleaned within a set time.
In this embodiment, after the inorganic impurities 200 on the surface of the porous suction cup 100 are cleaned by the first cleaning solution, the third cleaning solution is used to soften the organic impurities 300 in the holes 101 of the porous suction cup 100, and then the second cleaning solution is used to clean the organic impurities 300 in the holes 101 of the porous suction cup 100, so that the organic impurities 300 in the holes 101 of the porous suction cup 100 are first softened before being cleaned and then cleaned, which not only improves the cleaning efficiency, but also improves the cleaning effect.
Specifically, the step of softening the organic impurities 300 in the holes 101 of the porous suction cup 100 by using the third cleaning solution includes soaking the porous suction cup 100 without the inorganic impurities 200 in an NMP solution at 75-85 ℃ for 20-30 min.
When the organic impurities 300 are soaked and softened, the NMP solution only can play a role in softening the binder, the binder needs to be soaked for 20-30 min for a long time, and then the softened binder is decomposed by acetone.
It should be noted that the soaking time of the NMP solution needs to be 20-30 min, if the time is too short, the adhesive in the holes 101 of the porous suction cup 100 is not completely softened, the cleaning effect of acetone on the adhesive in the holes 101 is not good during cleaning, the heating temperature of NMP is recommended to be 80 ℃, the NMP is volatile when the machine is exhausted and heated, and the soaking liquid level of the solution is reduced to be incapable of being completely soaked when the temperature is too high.
The NMP solution may be a solution of a formulation known in the art.
Further, the step of cleaning the organic impurities 300 in the holes 101 of the porous suction cup 100 by using a second cleaning solution comprises cleaning the softened organic impurities 300 in the holes 101 of the porous suction cup 100 for 5-10 min by using acetone; and then, washing the organic impurities 300 in the holes 101 of the porous sucker 100 for 5-10 min by using isopropanol.
Preferably, the organic impurities 300 in the holes 101 of the softened porous suction cup 100 are cleaned for 5min by using acetone; and then, washing the organic impurities 300 in the holes 101 of the porous sucker 100 for 5min by using isopropanol.
Specifically, in the present embodiment, since the above-mentioned softening operation of the organic impurities 300 in the holes 101 of the porous suction cup 100 is performed after the inorganic impurities 200 on the surface of the porous suction cup 100 are cleaned, when the organic impurities 300 are cleaned by using acetone and isopropyl alcohol, the cleaning time can be 5min each, the cleaning time of the organic impurities 300 is greatly shortened, and the organic impurities 300 in the holes 101 of the porous suction cup 100 can be completely cleaned.
Further, the cleaning method of the porous suction cup 100 further comprises cleaning the porous suction cup 100 by using pure water ultrasonic wave with frequency of 1-5 MHz for 10-20 min after the step of cleaning the organic matter impurities 300 in the holes 101 of the porous suction cup 100 by using the second cleaning solution.
Further, the method of cleaning the porous suction cup 100 further includes drying the porous suction cup 100 that has been subjected to the ultrasonic cleaning with pure water.
Preferably, the porous sucker 100 subjected to the ultrasonic cleaning of the pure water is dried at 100 to 120 ℃ for 20 to 30 min.
The porous suction cup 100 ultrasonically cleaned with pure water may be dried by other drying methods known in the art, such as: spin drying or air drying, etc.
In this embodiment, preferably, the first cleaning solution is: HCl: h2O2：H2O is 1:1: 1 proportion of solution; the second cleaning solution comprises: acetone and isopropanol; the third wash solution was: NMP solution.
In summary, the method for cleaning the porous chuck 100 provided by the present invention comprises the following steps: cleaning inorganic impurities 200 on the surface of the porous suction cup 100 by using a first cleaning solution; after cleaning the inorganic impurities on the surface of the porous suction cup, the organic impurities 300 in the holes 101 of the porous suction cup 100 are cleaned by using a first cleaning solution. Compared with the prior art, the cleaning method of the porous sucker 100 provided by the invention has the advantages that firstly, the inorganic impurities 200 attached to the surface of the porous sucker 100 are cleaned, then, the organic impurities 300 in the holes 101 of the porous sucker 100 are cleaned, and the inorganic impurities 200 and the organic impurities 300 are subjected to layering treatment, so that the porous sucker 100 is completely cleaned.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A method for cleaning a porous sucker is characterized by comprising the following steps:
cleaning inorganic impurities on the surface of the porous sucker by using a first cleaning solution, wherein the inorganic impurities comprise Ni-AuGe alloy;
after cleaning inorganic impurities on the surface of the porous sucking disc, cleaning the organic impurities in the holes of the porous sucking disc by using a second cleaning solution;
the step of cleaning inorganic impurities on the surface of the porous sucker by using the first cleaning solution comprises the following steps:
the reaction was carried out using HCl: h2O2：H2O = 1:1: soaking and cleaning the porous sucker to be cleaned for 25-35 min by using the solution with the ratio of 1;
the cleaning method is characterized by also comprising the steps of cleaning organic impurities in the holes of the porous sucker by using a second cleaning solution, and softening the organic impurities in the holes of the porous sucker by using a third cleaning solution;
the step of cleaning organic impurities in the holes of the porous sucking disc by using the second cleaning solution comprises the following steps:
cleaning organic impurities in the holes of the softened porous sucker for 5-10 min by using acetone;
and cleaning organic impurities in the holes of the porous sucking disc for 5-10 min by using isopropanol.
2. The method for cleaning a porous chuck according to claim 1, wherein the step of softening the organic impurities in the holes of the porous chuck with the third cleaning solution comprises:
and soaking the porous sucking disc for removing the inorganic impurities for 20-30 min by using an NMP solution at the temperature of 75-85 ℃.
3. The method for cleaning the porous suction cup according to claim 1, wherein the organic impurities in the pores of the softened porous suction cup are cleaned for 5min by acetone;
and then washing organic impurities in the holes of the porous sucking disc for 5min by using isopropanol.
4. The method for cleaning a porous chuck according to claim 1, further comprising cleaning the porous chuck with ultrasonic pure water having a frequency of 1 to 5MHz for 10 to 20min, after the step of cleaning the organic impurities in the holes of the porous chuck with the second cleaning solution.
5. The method for cleaning a porous chuck according to claim 4, further comprising drying the porous chuck which has been ultrasonically cleaned with pure water.
6. The method for cleaning a porous suction cup according to claim 5, wherein the porous suction cup subjected to the ultrasonic cleaning with pure water is subjected to a drying treatment at 100 to 120 ℃ for 20 to 30 min.
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