CN111940394A - Quartz component regeneration cleaning method of semiconductor high-order process APC device - Google Patents
Quartz component regeneration cleaning method of semiconductor high-order process APC device Download PDFInfo
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- CN111940394A CN111940394A CN202010691293.8A CN202010691293A CN111940394A CN 111940394 A CN111940394 A CN 111940394A CN 202010691293 A CN202010691293 A CN 202010691293A CN 111940394 A CN111940394 A CN 111940394A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000010453 quartz Substances 0.000 title claims abstract description 37
- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000011069 regeneration method Methods 0.000 title abstract description 7
- 230000008929 regeneration Effects 0.000 title abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 15
- 238000000227 grinding Methods 0.000 claims abstract description 11
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 238000002791 soaking Methods 0.000 claims abstract description 11
- 238000005488 sandblasting Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- 238000007524 flame polishing Methods 0.000 claims abstract description 5
- 238000005406 washing Methods 0.000 claims abstract description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims abstract description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 10
- 239000012498 ultrapure water Substances 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 7
- 229910001868 water Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000001172 regenerating effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000013049 sediment Substances 0.000 claims description 2
- 239000003082 abrasive agent Substances 0.000 claims 2
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 31
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910020776 SixNy Inorganic materials 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000005422 blasting Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/08—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/003—Supply-air or gas filters
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of semiconductors. The regeneration cleaning method for the quartz component of the semiconductor high-order process APC device comprises the following steps: step one, carrying out micro powder sand blasting; step two, physical polishing and grinding; step three, flame polishing; step four, high-temperature annealing; step five, chemical cleaning; firstly, soaking the mixture for 10min by using an ammonia hydrogen peroxide solution at the temperature of 20-40 ℃; then, soaking for 5-20min by using a hydrofluoric/nitric acid solution; finally, soaking for 5-20min by using a hydrofluoric/nitric acid solution; step six, ultrasonic cleaning; and step seven, washing and drying. The invention reduces the cost and achieves the purpose of avoiding the corrosion problem of chemical stripping.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a cleaning method.
Background
In the manufacturing process of semiconductor devices, as the requirements of semiconductor processes are higher and higher, the requirements of parasitic current are higher and higher, wherein the requirements of copper purity for copper connecting wires are higher and higher, and APC (reactive mode pre-cleaning) devices for processes below 28nm are beneficial to improving the copper purity, and are widely applied.
In the process of purifying copper by introducing hydrogen into an APC device, under the condition of low vacuum degree, the hydrogen can deprive the medium oxygen of the silicon dioxide of a quartz component substrate in the device while purifying the copper on the surface of a silicon wafer, and the following chemical reactions occur: SiO 22+N2+H2→SiON+SixNy+H2O, so that the surface of the quartz member becomes rough in view of the by-product-SiON/SixNyThe material has strong acid and alkali resistance, and is difficult to remove by a chemical method under the condition of not damaging a quartz body (silicon dioxide) of a component material.
The traditional method for removing the by-products comprises the following steps:
1) firstly, 140 ℃ and 180 ℃ concentrated phosphoric acid remove SiON/SixNyThen rinsed with hot water and finally dehydrated. Disclosed in: the book written by strong schanquan, "study of hot phosphoric acid etching process in large-scale integrated circuit", and the author "etching rate of hot phosphoric acid in silicon nitride wet etching", published in journal semiconductor technology in 2007 by xiao fang, wanghui, rossian.
The disadvantage is that the use of hot phosphoric acid to remove deposits requires special cleaning machines and is costly.
2) And (4) soaking in hydrofluoric acid at 40 ℃ to remove SixNy. The article "application of ceramic silicon nitride ceramics and research progress of acid corrosion" published on pages 8-14 of modern technologies of Jiangyu, Liqiang, Jiangyu in journal, Huan Changtian, 2011.
Use of HF to remove SiON/Si from quartz component surfacesxNyThe defect is that the quartz body is corroded for a long time and cannot be used.
Disclosure of Invention
In view of the problems of the prior art, the present invention provides a method for regenerating and cleaning a quartz component of an APC device for semiconductor high-order processing, so as to solve at least one of the above technical problems.
In order to achieve the above object, the present invention provides a method for regenerating and cleaning a quartz component of an APC apparatus for semiconductor high-order processing, comprising the steps of:
firstly, carrying out micro powder sand blasting to remove residues or sediments on the surface;
step two, carrying out physical polishing and grinding to ensure that the surface roughness of the quartz component is lower than 1.0 um;
step three, flame polishing is carried out, so that the surface roughness of the quartz component is lower than 0.5 um;
step four, high-temperature annealing;
step five, chemical cleaning;
firstly, soaking the mixture for 10min by using an ammonia hydrogen peroxide solution at the temperature of 20-40 ℃;
then, soaking for 5-20min by using a hydrofluoric/nitric acid solution;
finally, soaking for 5-20min by using a hydrofluoric/nitric acid solution;
step six, ultrasonic cleaning;
and step seven, washing and drying.
More preferably, in the first step, blasting is carried out by using a gas protection jig, WA400# micro powder blasting is carried out on the quartz component, residues or deposits on the surface are removed, and the conveying gas pressure is 0.5-1Kg.cm2And the sand blasting time is 3-5 minutes.
Preferably, in the second step, the specific area is polished by using a rotary platform and adopting a certain amount of sieved silicon carbide abrasive, and the quartz component is polished for multiple times through multiple times of polishing of various sieved silicon carbide abrasive, wherein the thickness is firstly increased and then decreased, so that the surface roughness of the quartz component is lower than 1.0um, and the rotating speed of the rotary table is 30-75 rmp.
Further preferably, in the third step, polishing is performed by using an oxygen-hydrogen flame, so that a mirror surface effect with the roughness lower than 0.5um is obtained.
Further preferably, in the fourth step, the product is placed into a high temperature furnace for high temperature annealing at 1000-1150 ℃.
Preferably, in the fifth step, the ratio of the ammonia water hydrogen peroxide solution is NH4OH:H2O2:H2O ═ 0.5-1:0.5-2: 2-4; nitrofluoric acid solutionThe liquid is prepared from HF and HNO3:H2O＝1:5-10:44-60。
Preferably, in the fifth step, the concentration of the original solution in the ammonia water hydrogen peroxide solution is as follows: 28-30% of ammonia water and 28-30% of hydrogen peroxide; concentration of the original solution in the hydrofluoric/nitric acid solution: 69-70% of nitric acid and 49-50% of hydrofluoric acid.
Preferably, in the sixth step, the quartz component is subjected to ultrasonic cleaning, the temperature of ultrapure water in an ultrasonic groove is 20-38 ℃, the ultrasonic frequency is 40-80 KHz, and the ultrasonic cleaning time is 10-30 min. Then rinsed with ultra pure water and blown dry with 0.1 micron filtered nitrogen.
More preferably, in the sixth step and the seventh step, ultrapure water is adopted, and the ultrapure water is deionized water with the resistivity larger than 18M omega.
The invention has the following beneficial effects:
according to the regeneration method of the quartz component of the semiconductor high-order processing APC equipment etching device, the physical sand blasting is adopted to quickly remove the deposit, and the deposited film on the surface of the quartz component is removed in a short time; meanwhile, the surface roughness of the quartz component is reduced through physical grinding and polishing, flame polishing, high-temperature annealing and other treatments, and the problem that the surface roughness of a quartz product is increased in the using process is solved; the high-cleanness surface of the quartz component is obtained by chemical cleaning, and the aim of quartz regeneration cleaning in the high-order process is fulfilled. The invention reduces the cost and achieves the purpose of avoiding the corrosion problem of chemical stripping.
Drawings
FIG. 1 is a schematic flow chart of the present invention;
FIG. 2 is an external view of a quartz member before regeneration treatment;
FIG. 3 is an external view of the quartz component of FIG. 2 after treatment with the present invention;
FIG. 4 is a schematic view under a microscope of a quartz component before being recycled;
FIG. 5 is a schematic representation under a microscope after treatment with the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1 to 5, the method for regenerating a quartz member (gas distribution plate) of the semiconductor APC apparatus of this embodiment comprises the steps of:
step one, carrying out micro powder sand blasting;
blasting sand by using a gas protection jig, performing WA400# micro powder blasting sand on the quartz component to remove residues or deposits on the surface, wherein the conveying gas pressure is 0.5-1Kg.cm2The sand blasting time is 3-5 minutes;
step two, physical grinding and polishing;
grinding a specific area by using a rotary platform and adopting a certain amount of sieved silicon carbide grinding materials, and grinding for multiple times (firstly, grinding and then grinding) through multiple kinds of sieved silicon carbide grinding materials to ensure that the surface roughness of a quartz component is lower than 1.0um and the rotating speed of a rotary table is 30-75 rmp;
step three, flame polishing;
polishing by using oxygen-hydrogen flame to obtain a mirror surface effect with the roughness lower than 0.5 um;
step four, high-temperature annealing;
putting the product into a high-temperature furnace, and carrying out high-temperature annealing at 1000-1150 ℃;
step five, chemical cleaning;
5.1) Using aqueous Ammonia dioxygen solution (NH)4OH:H2O2:H2O is 0.5-1:0.5-2:2-4), the solution temperature is 20-40 ℃, and the soaking time is 10 min.
5.2), using hydrofluoric/nitric acid solution (HF: HNO)3:H2O1: 5-10:44-60) for 5-20 min;
5.3), using hydrofluoric/nitric acid solution (HF: HNO)3:H2O1: 5-10:44-60) for 5-20 min;
step six, ultrasonic cleaning;
and (3) ultrasonically cleaning the quartz component, wherein the temperature of ultrapure water in an ultrasonic groove is 20-38 ℃, the ultrasonic frequency is 40-80 KHz, the ultrasonic cleaning time is 10-30min, and the quartz component is washed by the ultrapure water and dried by filtering nitrogen with the particle size of 0.1 micron.
And step seven, rinsing with ultrapure water and drying.
The comparison of the appearance of the quartz member (gas distribution plate) before and after cleaning and regeneration, as shown in fig. 2 and 3, through the above embodiment, the deposited film layer and the contaminant particles in fig. 2 are removed to show the flat and bright state in fig. 3 (in addition, fig. 4 is a microscopic picture of the surface of the product before cleaning, which shows the state of the deposit on the surface of the product and the roughness, and fig. 5 is a microscopic picture of the surface of the product after cleaning, which shows the flat and bright state). Through ICP-MS detection, the product can reach the cleanliness of silicon chip level (the metal ion level is 1-300E10 Atoms/cm)2)。
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (9)
1. The method for regenerating and cleaning the quartz component of the semiconductor high-order process APC device is characterized by comprising the following steps:
firstly, carrying out micro powder sand blasting to remove residues or sediments on the surface;
step two, carrying out physical polishing and grinding to ensure that the surface roughness of the quartz component is lower than 1.0 um;
step three, flame polishing is carried out, so that the surface roughness of the quartz component is lower than 0.5 um;
step four, high-temperature annealing;
step five, chemical cleaning;
firstly, soaking the mixture for 10min by using an ammonia hydrogen peroxide solution at the temperature of 20-40 ℃;
then, soaking for 5-20min by using a hydrofluoric/nitric acid solution;
finally, soaking for 5-20min by using a hydrofluoric/nitric acid solution;
step six, ultrasonic cleaning;
and step seven, washing and drying.
2. The method of claim 1 wherein said cleaning system comprises a quartz component cleaning systemThe method is characterized in that: in the first step, a gas protection jig is used for sand blasting, WA400# micro powder sand blasting is carried out on the quartz component, and the adopted conveying gas pressure is 0.5-1Kg2And the sand blasting time is 3-5 minutes.
3. The method of claim 1, wherein the cleaning step further comprises the steps of: and in the second step, a rotary platform is used, certain sieved silicon carbide abrasive materials are adopted to polish a specific area, and multiple times of polishing are carried out on multiple sieved silicon carbide abrasive materials, wherein the polishing is carried out firstly on the coarse side and then on the fine side, and the rotating speed of the rotary platform is 30-75 rmp.
4. The method of claim 1, wherein the cleaning step further comprises the steps of: and in the third step, polishing is carried out by using oxygen-hydrogen flame, and a mirror surface effect with the roughness lower than 0.5um is obtained.
5. The method of claim 1, wherein the cleaning step further comprises the steps of: in the fourth step, the product is placed into a high temperature furnace for 1000-1150 ℃ high temperature annealing.
6. The method of claim 1, wherein the cleaning step further comprises the steps of: in the fifth step, the proportion of the ammonia water hydrogen peroxide solution is NH4OH:H2O2:H2O＝0.5-1:0.5-2:2-4；
The proportion of the hydrofluoric/nitric acid solution is HF to HNO3:H2O＝1:5-10:44-60。
7. The method of claim 1, wherein the cleaning step further comprises the steps of: in the fifth step, the concentration of the original liquid in the ammonia water hydrogen peroxide solution is as follows: 28-30% of ammonia water and 28-30% of hydrogen peroxide;
concentration of the original solution in the hydrofluoric/nitric acid solution: 69-70% of nitric acid and 49-50% of hydrofluoric acid.
8. The method of claim 1, wherein the cleaning step further comprises the steps of: and sixthly, ultrasonically cleaning the quartz component, wherein the temperature of ultrapure water in an ultrasonic groove is 20-38 ℃, the ultrasonic frequency is 40-80 KHz, the ultrasonic cleaning time is 10-30min, and then washing with ultrapure water and drying with 0.1 micron filtered nitrogen.
9. The method of claim 8, wherein the cleaning step further comprises the steps of: in the sixth step and the seventh step, the ultrapure water is deionized water with the resistivity larger than 18M omega.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030718A (en) * | 1987-07-20 | 1989-02-01 | 吉林工业大学 | Gas-protecting type sand ejector |
| JPH07283182A (en) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | Semiconductor substrate cleaning method |
| CN101219429A (en) * | 2007-01-10 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning quartz parts surface in polycrystal etching cavity |
| CN108672375A (en) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | A kind of regeneration method of 8 cun of silicon wafer process ETCH8500 art quartz shading rings of semiconductor |
| CN109590267A (en) * | 2018-12-28 | 2019-04-09 | 深圳仕上电子科技有限公司 | Cleaning method |
| CN110510886A (en) * | 2019-09-18 | 2019-11-29 | 沈阳汉科半导体材料有限公司 | Chemical granulation processing method for quartz surface |
| CN111112212A (en) * | 2019-11-29 | 2020-05-08 | 上海富乐德智能科技发展有限公司 | Quartz thermal screen plate regeneration method for integrated circuit manufacturing |
-
2020
- 2020-07-17 CN CN202010691293.8A patent/CN111940394B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030718A (en) * | 1987-07-20 | 1989-02-01 | 吉林工业大学 | Gas-protecting type sand ejector |
| JPH07283182A (en) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | Semiconductor substrate cleaning method |
| CN101219429A (en) * | 2007-01-10 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning quartz parts surface in polycrystal etching cavity |
| CN108672375A (en) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | A kind of regeneration method of 8 cun of silicon wafer process ETCH8500 art quartz shading rings of semiconductor |
| CN109590267A (en) * | 2018-12-28 | 2019-04-09 | 深圳仕上电子科技有限公司 | Cleaning method |
| CN110510886A (en) * | 2019-09-18 | 2019-11-29 | 沈阳汉科半导体材料有限公司 | Chemical granulation processing method for quartz surface |
| CN111112212A (en) * | 2019-11-29 | 2020-05-08 | 上海富乐德智能科技发展有限公司 | Quartz thermal screen plate regeneration method for integrated circuit manufacturing |
Cited By (6)
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| CN113289959A (en) * | 2021-05-12 | 2021-08-24 | 上海富乐德智能科技发展有限公司 | Method for cleaning ceramic surface of electrostatic chuck part of semiconductor ETCH (electronic toll Collection) equipment |
| CN114247699A (en) * | 2021-12-13 | 2022-03-29 | 安徽光智科技有限公司 | Ultrasonic demoulding method for crystal oscillation plate |
| CN114211405A (en) * | 2021-12-17 | 2022-03-22 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing fluoride on surface of aluminum substrate |
| CN114536158A (en) * | 2022-01-19 | 2022-05-27 | 宁波云德半导体材料有限公司 | Processing method of quartz window of etching machine reaction chamber |
| CN114664699A (en) * | 2022-03-03 | 2022-06-24 | 上海富乐德智能科技发展有限公司 | A method of regenerating Bell jar in ETCH equipment for semiconductor |
| CN114749407A (en) * | 2022-04-08 | 2022-07-15 | 安徽富乐德科技发展股份有限公司 | Ultrahigh-pressure physical film removing method for semiconductor component |
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