CN112834782B - MEMS piezoresistive acceleration sensor chip with distributed mass block structure - Google Patents
MEMS piezoresistive acceleration sensor chip with distributed mass block structure Download PDFInfo
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- CN112834782B CN112834782B CN202110244983.3A CN202110244983A CN112834782B CN 112834782 B CN112834782 B CN 112834782B CN 202110244983 A CN202110244983 A CN 202110244983A CN 112834782 B CN112834782 B CN 112834782B
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- 230000001133 acceleration Effects 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910018885 Pt—Au Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 9
- 230000035882 stress Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a MEMS piezoresistive acceleration sensor chip with a distributed mass block structure, which comprises a siliceous substrate and a greenhouse glass body; four suspended mass blocks are arranged in the siliceous substrate; the four suspended mass blocks are connected through four torsion beams to form a square; the torsion beam and the suspended mass block face towards one side of the greenhouse glass body and are flush, and the torsion beam is positioned on the central axis of the suspended mass block; the four suspended mass blocks face the side walls of the two opposite inner side walls of the siliceous substrate and are respectively connected with the inner side walls of the siliceous substrate through four supporting beams; the four suspended mass blocks face the side walls of the other two opposite inner side walls of the siliceous substrate and are respectively connected with the inner side walls of the siliceous substrate through four sensitive beams; the supporting beam, the sensitive beam and the suspended mass block are flush with one surface far away from the greenhouse glass body, and the supporting beam and the sensitive beam are both positioned on the central axis of the suspended mass block. The invention can eliminate the transverse cross interference of the sensor theoretically, and has easier processing and convenient mass production.
Description
Technical Field
The invention relates to the technical field of micro acceleration sensor chips, in particular to a MEMS piezoresistive acceleration sensor chip with a distributed mass block structure.
Background
The MEMS piezoresistive acceleration sensor serving as the earliest developed silicon micro-accelerometer has the advantages of simple structure, low power consumption, wide working frequency band and the like, wherein the single cantilever-beam mass block structure is the earliest developed structure, and has the advantages of simple structure and higher sensitivity, but the sensor with the structure cannot be applied to the design of the high-performance piezoresistive acceleration sensor due to larger transverse cross interference and low natural frequency. In later studies, sensitive structures such as double cantilever beam structures, bridge structures, cross beams and composite multi-beams were proposed successively, all with the aim of improving the overall performance of the beam-mass structure. The cantilever beams are arranged on two sides of one side of the mass block by the double-cantilever beam structure, so that transverse torsional rigidity is increased, cross interference of the sensor in one direction is reduced, but the cross interference in one direction is not improved; the appearance of the single-bridge and double-bridge sensitive structures is that the stress condition of the double-end clamped beams is utilized, and a plurality of piezoresistors are arranged in different stress areas, so that the sensitivity of the sensor is improved; the composite multi-beam structure is based on a double-bridge structure, and the improvement of the comprehensive performance of the sensor is realized by adding two short sensitive beams at the center line of the other group of opposite sides of the mass block.
Although the above scheme improves the overall performance of the sensor to a certain extent, the following problems still exist:
(1) The lateral cross-talk of the sensor, while improved by the proper placement of the beams, cannot be suppressed from the source.
(2) The sensitivity and the natural frequency of the sensor are a pair of mutually restricted parameters, and the sensor can have higher natural frequency and measurement sensitivity by the optimized design of the sensitive structure, but the common improvement of the sensitivity and the natural frequency is not realized.
Therefore, how to provide a MEMS piezoresistive acceleration sensor chip capable of eliminating the lateral cross interference of the sensor in theory is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a distributed mass block structure MEMS piezoresistive acceleration sensor chip, which aims to solve the above technical problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
A distributed mass block structure MEMS piezoresistive acceleration sensor chip, comprising: a siliceous substrate of rectangular frame structure and a glass body bonded to the surface of the siliceous substrate; the surface of the greenhouse glass body is provided with square grooves corresponding to the cavities of the siliceous substrate;
Four suspended mass blocks are arranged in the cavity of the siliceous substrate; the four suspended mass blocks are connected through four torsion beams to form a square; the torsion beam and the suspended mass block are flush towards one surface of the greenhouse glass body, and the torsion beam is positioned on the central axis of the suspended mass block;
The four suspended mass blocks face the side walls of the two opposite inner side walls of the siliceous substrate and are respectively connected with the inner side walls of the siliceous substrate through four supporting beams; the four suspended mass blocks face the side walls of the other two opposite inner side walls of the siliceous substrate and are respectively connected with the inner side walls of the siliceous substrate through four sensitive beams; the supporting beam, the sensitive beam and the suspended mass block are flush with one surface far away from the greenhouse glass body, and the supporting beam and the sensitive beam are both positioned on the central axis of the suspended mass block.
According to the technical scheme, the mass block is divided into four suspended mass blocks on the basis of a traditional double-bridge structure, the supporting beams are used for increasing the natural frequency of the sensor, the suspended mass blocks are positioned near the sensitive beams, the stress of the sensitive beams can be effectively increased, gaps among the four suspended mass blocks are utilized for manufacturing the torsion beams, the mass centers of all beams are conveniently positioned at the mass center positions of the suspended mass blocks, when the transverse acceleration acts, if the mass centers of all beam structures supporting the suspended mass blocks and the mass center of the mass blocks are not in the same plane, the suspended mass blocks can be twisted, the transverse cross interference can be effectively restrained by arranging the torsion beams, and the transverse cross interference of the sensor can be eliminated theoretically due to the fact that the conventional MEMS processing means is very difficult to process the beams to the center of the mass blocks.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass block structure, the sensitive beam is provided with a through rectangular groove facing the greenhouse glass body; two varistor strips are arranged on the notches on two sides of the rectangular groove through an ion implantation technology, and the two varistor strips on each sensitive beam form a varistor; and four piezoresistors on the four sensitive beams are connected through metal leads to form a Wheatstone full-bridge circuit. The positions of the rectangular grooves are arranged according to the positive/negative stress distribution rule on the sensitive beam under the structural load, so that the stress concentration can be effectively realized. If the beam is simply manufactured in the middle of the mass block, the ion implantation technology is difficult to realize, at least cannot be realized at present, and can be realized only in other complex modes.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, the metal lead is a Ti-Pt-Au multilayer metal lead. The good electrical connection relation between piezoresistors can be effectively ensured.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, the square groove on the glass body of the greenhouse has a depth of 15 μm; the square groove is larger than the square formed by the four suspended mass blocks. Providing a damping gap for the sensor chip.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, the cavity of the silicon substrate is square. The structural accuracy can be further improved.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, the dimensions of the four suspended masses are the same; the thickness of the suspended mass block is the same as that of the siliceous substrate, and two surfaces of the suspended mass block corresponding to the greenhouse glass body are square. The structural precision can be further improved, and the dimension design of each beam is facilitated.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, the thicknesses of the torsion beam, the support beam and the sensitive beam are half of the thickness of the suspended mass. The structural accuracy can be further improved, and the motion matching effect between the beams is improved.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, four support beams have the same size; the four sensitive beams are the same in size, and the size of each sensitive beam is smaller than that of the corresponding supporting beam. The size of the torsion beam is determined by the size of the sensitive beam, the selection can be carried out according to actual needs, and the proper size selection can enable the total mass center of the torsion beam and the sensitive beam to be positioned at the mass center position of the suspended mass block, namely, the mass center position of the system is ensured to be unchanged, and other beam size position relations can be obtained in the same way.
Preferably, in the MEMS piezoresistive acceleration sensor chip with a distributed mass structure, a total centroid of the torsion beam and the sensitive beam is the same as a centroid of the suspended mass. The transverse cross interference suffered by the structure can be effectively restrained.
Compared with the prior art, the invention discloses the MEMS piezoresistive acceleration sensor chip with the distributed mass block structure, which has the following beneficial effects:
1. The invention aims to provide a MEMS piezoresistive acceleration sensor chip with a distributed mass block structure, wherein the sensitive structure of the chip is optimized by a traditional double-bridge structure, and the natural frequency and the measurement sensitivity of the chip are superior to those of the traditional double-bridge structure, so that the sensitivity and the natural frequency of the sensor are improved together.
2. The structure provided by the invention can eliminate the transverse cross interference of the sensor theoretically, is easier to process and is convenient for mass production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a distributed mass block structure MEMS piezoresistive acceleration sensor chip according to the present invention;
FIG. 2 is a front view of a MEMS piezoresistive acceleration sensor chip with a distributed mass structure according to the present invention;
FIG. 3 is a schematic side view of a distributed mass block structure MEMS piezoresistive acceleration sensor chip according to the present invention.
Wherein:
1-a siliceous substrate; 2-shed glass body; 3-square grooves; 4-suspending the mass block; 5-torsion beams; 6-supporting the beam;
7-sensitive beams; 8-rectangular grooves.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 3, an embodiment of the present invention discloses a MEMS piezoresistive acceleration sensor chip with a distributed mass structure, which includes: a siliceous substrate 1 having a rectangular frame structure, and a glass cover 2 bonded to the surface of the siliceous substrate 1; square grooves 3 corresponding to the cavities of the siliceous substrates 1 are formed in the surface of the greenhouse glass body 2;
Four suspended mass blocks 4 are arranged in the cavity of the siliceous substrate 1; the four suspended mass blocks 4 are connected through four torsion beams 5 to form a square; the torsion beam 5 and the suspended mass block 4 face towards one side of the greenhouse glass body 2 in a flush way, and the torsion beam 5 is positioned on the central axis of the suspended mass block 4;
the four suspended mass blocks 4 are connected with the inner side walls of the siliceous substrate 1 through four supporting beams 6 respectively, and face the side walls of the two opposite inner side walls of the siliceous substrate 1; the four suspended mass blocks 4 face the side walls of the other two opposite inner side walls of the siliceous substrate 1 and are respectively connected with the inner side walls of the siliceous substrate 1 through four sensitive beams 7; the supporting beam 6, the sensitive beam 7 and the suspended mass block 4 are flush with one surface far away from the greenhouse glass body 2, and the supporting beam 6 and the sensitive beam 7 are both positioned on the central axis of the suspended mass block 4.
In order to further optimize the technical scheme, a through rectangular groove 8 facing the greenhouse glass body 2 is formed in the sensitive beam 7; two varistor strips are arranged on the notches on the two sides of the rectangular groove 8 through an ion implantation technology, and the two varistor strips on each sensitive beam 7 form a varistor; four piezoresistors on the four sensitive beams 7 are connected through metal leads to form a Wheatstone full bridge circuit.
In order to further optimize the technical scheme, the metal lead adopts a Ti-Pt-Au multilayer metal lead.
In order to further optimize the technical scheme, the depth of the square groove 3 on the greenhouse glass body 2 is 15 mu m; the square groove 3 has an area larger than the square formed by the four suspended mass blocks 4.
In order to further optimize the above technical solution, the cavity of the siliceous substrate 1 is square.
In order to further optimize the technical scheme, the four suspended masses 4 have the same size; the thickness of the suspended mass block 4 is the same as that of the siliceous substrate 1, and two surfaces of the suspended mass block 4 corresponding to the greenhouse glass body 2 are square.
In order to further optimize the technical scheme, the thicknesses of the torsion beam 5, the support beam 6 and the sensitive beam 7 are half of the thickness of the suspended mass block 4.
In order to further optimize the above technical solution, the four support beams 6 are the same size; the four sensitive beams 7 are of the same size.
In order to further optimize the above solution, the dimensions of the sensitive beams 7 are smaller than the dimensions of the support beams 6.
In order to further optimize the technical scheme, the total mass center of the torsion beam 5 and the sensitive beam 7 is the same as the mass center of the suspended mass block 4.
The invention aims to provide a MEMS piezoresistive acceleration sensor chip with a distributed mass block structure, the sensitive structure of the chip is optimized by a traditional double-bridge structure, a supporting beam 6 is used for increasing the natural frequency of a sensor, a suspended mass block 4 is positioned near the sensitive beam 7, the stress of the sensitive beam 7 can be effectively increased, a torsion beam 5 is manufactured by utilizing gaps among the four suspended mass blocks 4, the mass centers of all beams are conveniently positioned at the mass center position of the suspended mass block 4, the natural frequency and the measurement sensitivity are better than those of the traditional double-bridge structure, and the common promotion of the sensitivity and the natural frequency of the sensor is realized.
In acceleration detection, the supporting beam 6 provides rigidity, stress on the sensitive beam 7 is larger than that of the supporting beam 6, when transverse acceleration acts, if the mass centers of all beam structures supporting the suspended mass block 4 and the mass center of the mass block are not in the same plane, the suspended mass block 4 can generate torsion, and the torsion beam 5 can effectively inhibit transverse cross interference.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A distributed mass block structure MEMS piezoresistive acceleration sensor chip, comprising: a siliceous substrate (1) of rectangular frame structure, and a glass-covered body (2) bonded to the surface of the siliceous substrate (1); square grooves (3) corresponding to the cavities of the siliceous substrate (1) are formed in the surface of the greenhouse glass body (2);
Four suspended mass blocks (4) are arranged in the cavity of the siliceous substrate (1); the four suspended mass blocks (4) are connected through four torsion beams (5) to form a square; the torsion beam (5) and the suspended mass block (4) are flush towards one surface of the greenhouse glass body (2), and the torsion beam (5) is positioned on the central axis of the suspended mass block (4);
The four suspended mass blocks (4) face the side walls of the two opposite inner side walls of the siliceous substrate (1) and are respectively connected with the inner side walls of the siliceous substrate (1) through four supporting beams (6); the four suspended mass blocks (4) face the side walls of the other two opposite inner side walls of the siliceous substrate (1) and are respectively connected with the inner side walls of the siliceous substrate (1) through four sensitive beams (7); the supporting beam (6), the sensitive beam (7) and the suspended mass block (4) are flush with one surface far away from the greenhouse glass body (2), and the supporting beam (6) and the sensitive beam (7) are both positioned on the central axis of the suspended mass block (4);
A through rectangular groove (8) facing the greenhouse glass body (2) is formed in the sensitive beam (7); two varistor strips are arranged on the notches on the two sides of the rectangular groove (8) through an ion implantation technology, and the two varistor strips on each sensitive beam (7) form a varistor; four piezoresistors on the four sensitive beams (7) are connected through metal leads to form a Wheatstone full-bridge circuit;
The dimensions of the four suspended mass blocks (4) are the same; the thickness of the suspended mass block (4) is the same as that of the siliceous substrate (1), and two surfaces of the suspended mass block (4) corresponding to the greenhouse glass body (2) are square;
the four supporting beams (6) have the same size; the four sensitive beams (7) are the same size.
2. The MEMS piezoresistive acceleration sensor chip according to claim 1, wherein the metal lead is a Ti-Pt-Au multilayer metal lead.
3. A distributed mass block structure MEMS piezoresistive acceleration sensor chip according to claim 1, characterized in that the depth of said square groove (3) on said greenhouse glass body (2) is 15 μm; the square groove (3) is larger than the square formed by the four suspended mass blocks (4).
4. A distributed mass structure MEMS piezoresistive acceleration sensor chip according to claim 1, characterized in, that the cavity of said siliceous substrate (1) is square.
5. A distributed mass block structure MEMS piezoresistive acceleration sensor chip according to claim 1, characterized in that the torsion beam (5), the support beam (6) and the sensitive beam (7) are each half the thickness of the suspended mass (4).
6. A distributed mass structure MEMS piezoresistive acceleration sensor chip according to claim 1, characterized in, that the sensitive beam (7) has a smaller size than the support beam (6).
7. A distributed mass block structure MEMS piezoresistive acceleration sensor chip according to claim 6, characterized in, that the total centre of mass of said torsion beam (5) and said sensitive beam (7) is the same as the centre of mass of said suspended mass (4).
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| CN113933538B (en) * | 2021-09-18 | 2024-07-19 | 重庆邮电大学 | Piezoresistive high-g-value accelerometer |
| CN119375512A (en) * | 2024-12-27 | 2025-01-28 | 合肥美镓传感科技有限公司 | Acceleration sensor and method for manufacturing the same |
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| CN103995151B (en) * | 2014-05-29 | 2017-04-19 | 西安交通大学 | Composite eight-beam high-frequency-response acceleration sensor chip |
| CN104237560A (en) * | 2014-09-17 | 2014-12-24 | 西安交通大学 | Acceleration sensor chip capable of resisting transverse effect and manufacturing method thereof |
| CN105137120B (en) * | 2015-09-01 | 2018-04-13 | 中国人民解放军国防科学技术大学 | A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof |
| CN107907710B (en) * | 2017-09-30 | 2019-10-11 | 西安交通大学 | A MEMS piezoresistive two-axis acceleration sensor chip and its preparation method |
| CN109596859B (en) * | 2019-01-18 | 2021-08-31 | 中国电子科技集团公司第十三研究所 | Piezoresistive acceleration sensor |
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