CN119375512A - Acceleration sensor and method for manufacturing the same - Google Patents
Acceleration sensor and method for manufacturing the same Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
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- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The application discloses an acceleration sensor and a preparation method thereof, and belongs to the technical field of semiconductors. The acceleration sensor comprises a substrate, four induction resistors and four mass blocks, wherein two input ends are electrically connected with the four induction resistors to form an equivalent circuit, when acceleration is provided in a measured direction, the four induction resistors can generate resistance change under acting force of the mass blocks respectively, and the acceleration can be detected by measuring voltage change conditions of two output ends in the equivalent circuit. In the embodiment of the application, the four induction resistors are electrically connected to form a circuit structure for calculating the acceleration, so that the influence of other environmental factors on a calculation result can be avoided, and the accuracy of the calculation result is improved. In addition, the four sensing resistors are all high-electron mobility transistors, the piezoresistive coefficient is large, the sensitivity is high, and the reliability is high in low-temperature and high-temperature environments, so that the sensitivity and the reliability of the acceleration sensor can be improved.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to an acceleration sensor and a preparation method thereof.
Background
The traditional acceleration sensor is mostly manufactured by adopting silicon materials based on the principle of piezoresistance effect, piezoelectric effect or capacitance effect, and generally boron doping is used as the piezoresistance material, so that the piezoresistance coefficient is small, the sensitivity is low, the temperature drift is excessive in a low-temperature or high-temperature environment, and the sensor can fail.
How to improve the sensitivity of an acceleration sensor and improve the reliability of the acceleration sensor in a high-temperature and low-temperature environment becomes a problem to be solved in the art.
Disclosure of Invention
The application provides an acceleration sensor and a preparation method thereof, aiming at improving the sensitivity and reliability of the acceleration sensor.
In a first aspect, the present application provides an acceleration sensor comprising a substrate, a plurality of sense resistors, and a plurality of masses. The plurality of sensing resistors comprise a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor, and the plurality of mass blocks comprise a first mass block, a second mass block, a third mass block and a fourth mass block. The first mass block is connected with the base body through a first induction resistor, the second mass block is connected with the base body through a second induction resistor, the third mass block is connected with the base body through a third induction resistor, and the fourth mass block is connected with the base body through a fourth induction resistor.
The acceleration sensor further comprises a first input end, a second input end, a first output end and a second output end, wherein the sensing resistors are high electron mobility transistors, a source electrode of the first sensing resistor is electrically connected with the first input end, a drain electrode of the first sensing resistor is electrically connected with the first output end and a source electrode of the second sensing resistor, a drain electrode of the second sensing resistor is electrically connected with the second input end and a drain electrode of the third sensing resistor, a source electrode of the third sensing resistor is electrically connected with the second output end and a drain electrode of the fourth sensing resistor, and a source electrode of the fourth sensing resistor is electrically connected with the first input end.
In some embodiments, the acceleration sensor further comprises a plurality of cantilever structures, the mass comprising first and second ends opposite in a first direction, the first direction being parallel to a plane in which the substrate lies. The first end of the first mass block is connected with the base body through the first induction resistor, and the first end of the first mass block is also connected with the base body through the cantilever structure. The first end of the second mass block is connected with the base body through the second induction resistor, and the first end of the second mass block is also connected with the base body through the cantilever structure. The second end of the third mass block is connected with the base body through a third induction resistor, and the second end of the third mass block is also connected with the base body through a cantilever structure. The second end of the fourth mass block is connected with the base body through a fourth induction resistor, and the second end of the fourth mass block is also connected with the base body through a cantilever structure. The cantilever structure comprises a first side and a second side which are opposite along a second direction, the first sensing resistor and the third sensing resistor are both positioned on the first side of the corresponding cantilever structure, the second sensing resistor and the fourth sensing resistor are both positioned on the second side of the corresponding cantilever structure, the second direction is intersected with the first direction, and the second direction is parallel to the plane where the matrix is positioned.
In some embodiments, the acceleration sensor further comprises a connecting arm, through which the sensing resistor is connected to the base body.
In some embodiments, the acceleration sensor further comprises a substrate comprising opposing first and second surfaces, the base, the plurality of sense resistors, and the plurality of masses being disposed on the first surface. The substrate further includes a cavity therethrough, and a plurality of orthographic projections of the sense resistors on the first surface are located within the range of orthographic projections of the cavity on the first surface.
In some embodiments, the acceleration sensor further includes a substrate disposed on the second surface, the substrate including a third surface adjacent to the substrate, the third surface being provided with a groove, and orthographic projections of the plurality of sensing resistors and the plurality of masses on the third surface being located within an area where the groove is located.
In some embodiments, the sense resistor further comprises a gate disposed between the source and the drain of the sense resistor.
In some embodiments, the sense resistor further includes a channel layer and a barrier layer disposed in a stacked arrangement, the material of the channel layer including at least one of gallium nitride, gallium arsenide, or indium gallium arsenide, and the material of the barrier layer including at least one of indium gallium nitride, aluminum gallium nitride, indium phosphide, aluminum gallium arsenide, or indium aluminum arsenide.
In a second aspect, an embodiment of the present application further provides a method for manufacturing an acceleration sensor, where the method includes forming a substrate, a plurality of sensing resistors, and a plurality of masses. The plurality of sensing resistors comprise a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor, the plurality of mass blocks comprise a first mass block, a second mass block, a third mass block and a fourth mass block, the first mass block is connected with the base body through the first sensing resistor, the second mass block is connected with the base body through the second sensing resistor, the third mass block is connected with the base body through the third sensing resistor, and the fourth mass block is connected with the base body through the fourth sensing resistor. The acceleration sensor further comprises a first input end, a second input end, a first output end and a second output end, wherein the sensing resistors are high electron mobility transistors, a source electrode of the first sensing resistor is electrically connected with the first input end, a drain electrode of the first sensing resistor is electrically connected with the first output end and a source electrode of the second sensing resistor, a drain electrode of the second sensing resistor is electrically connected with the second input end and a drain electrode of the third sensing resistor, a source electrode of the third sensing resistor is electrically connected with the second output end and a drain electrode of the fourth sensing resistor, and a source electrode of the fourth sensing resistor is electrically connected with the first input end.
In some embodiments, the method for forming the substrate, the plurality of sensing resistors, and the plurality of masses includes steps S10 to S40 as follows:
and S10, forming a channel layer on the substrate to obtain a matrix.
And step S20, forming a barrier layer on the side of the channel layer away from the substrate.
And step S30, forming a source electrode and a drain electrode on one side of the barrier layer away from the substrate to obtain a plurality of induction resistors.
And S40, etching the channel layer and the substrate to obtain a plurality of mass blocks, wherein the substrate comprises a through cavity, and the orthographic projections of a plurality of sensing resistors on the substrate are positioned in the area range where the cavity is positioned.
In some embodiments, the preparation method further includes the following steps S50 to S60:
And S50, forming a groove on the surface of the substrate.
And step S60, bonding a base with the substrate, wherein the base is positioned on one side of the substrate far away from the channel layer, the surface of the base with the grooves is close to the substrate, and orthographic projections of a plurality of sensing resistors and a plurality of mass blocks on the base are positioned in the range of the areas where the grooves are positioned.
In an embodiment provided by the application, the acceleration sensor comprises a matrix, a plurality of induction resistors and a plurality of mass blocks. The sensing resistors comprise four sensing resistors, the mass blocks comprise four mass blocks, and the four mass blocks are connected with the base body through the four sensing resistors respectively.
The acceleration sensor further comprises a first input end, a second input end, a first output end and a second output end, wherein among the four induction resistors, the source electrode of the first induction resistor is electrically connected with the first input end, the drain electrode of the first induction resistor is electrically connected with the source electrodes of the first output end and the second induction resistor, the drain electrode of the second induction resistor is electrically connected with the drain electrodes of the second input end and the third induction resistor, the source electrode of the third induction resistor is electrically connected with the drain electrodes of the second output end and the fourth induction resistor, and the source electrode of the fourth induction resistor is electrically connected with the first input end.
That is, when acceleration is provided in the measured direction, the four mass blocks cannot displace along with the substrate due to inertia, so that the four sensing resistors playing a role in connection can be slightly deformed respectively, and after the four sensing resistors are stressed due to deformation, resistance changes can be generated under the piezoresistive effect. The magnitude of the acceleration can be calculated through the differential output of the circuit, and compared with a method for measuring the acceleration by using a single induction resistor, the method for calculating the acceleration by using the four induction resistors is characterized in that the four induction resistors are electrically connected to form a circuit structure for calculating the acceleration, so that the influence of other environmental factors on a calculation result can be avoided, and the accuracy of the calculation result is improved.
And the four sensing resistors are all high electron mobility transistors, have larger piezoresistive coefficient and higher sensitivity, and have higher reliability in low-temperature and high-temperature environments, so that the sensitivity and the reliability of the acceleration sensor can be improved.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
Fig. 1 is a top view of an acceleration sensor according to an embodiment of the present application;
FIG. 2 is an equivalent circuit diagram of the acceleration sensor of FIG. 1;
FIG. 3 is a cross-sectional view of the acceleration sensor of FIG. 1 taken along section line A-A';
FIG. 4 is a flowchart of a method for manufacturing an acceleration sensor according to an embodiment of the present application;
Fig. 5 to 14 are each a step diagram of preparing an acceleration sensor according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments obtained by a person skilled in the art based on the embodiments provided by the present application fall within the scope of protection of the present application.
Throughout the specification and claims, the term "comprising" is to be interpreted as an open, inclusive meaning, i.e. "comprising, but not limited to, unless the context requires otherwise.
The terms "first" and "second" are used below for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the embodiments of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In describing some embodiments, the expression "connected" and its derivatives may be used. The term "coupled" is used in a broad sense, e.g., as a fixed connection, as a removable connection, or as a unitary body, as a direct connection, as an indirect connection via an intermediary, e.g., where some embodiments are described, the term "coupled" may be used to indicate that two or more elements are in direct physical or electrical contact with each other.
In addition, the use of "based on" is intended to be open and inclusive in that a process, step, calculation, or other action "based on" one or more of the stated conditions or values may be based on additional conditions or beyond the stated values in practice.
It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present between the layer or element and the other layer or substrate.
Exemplary embodiments are described herein with reference to cross-sectional illustrations that are idealized exemplary figures. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Thus, variations from the shape of the drawings due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
Examples of the embodiments are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements throughout or elements having like or similar functionality. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
At present, the traditional acceleration sensor is mostly manufactured by adopting silicon materials based on the principle of piezoresistance effect, piezoelectric effect or capacitance effect, and generally boron doping is used as the piezoresistance material, and the traditional acceleration sensor has the problems of smaller piezoresistance coefficient and lower sensitivity due to the physical characteristics of the material, and the sensor can malfunction due to overlarge temperature drift in a low-temperature or high-temperature environment.
In order to solve at least one of the above problems, the present application provides an acceleration sensor, which aims to improve the sensitivity and reliability thereof, as shown in fig. 1-3, fig. 1 is a top view of the acceleration sensor according to an embodiment of the present application, fig. 2 is an equivalent circuit diagram of the acceleration sensor in fig. 1, and fig. 3 is a cross-sectional view of the acceleration sensor along a section line A-A' in fig. 1.
The acceleration sensor 10 includes a base 100, a plurality of sense resistors, and a plurality of masses. Wherein the plurality of masses includes a first mass 101, a second mass 102, a third mass 103, and a fourth mass 104, and the plurality of sense resistors includes a first sense resistor 201, a second sense resistor 202, a third sense resistor 203, and a fourth sense resistor 204. The first mass 101 is connected to the base 100 through a first sense resistor 201, the second mass 102 is connected to the base 100 through a second sense resistor 202, the third mass 103 is connected to the base 100 through a third sense resistor 203, and the fourth mass 104 is connected to the base 100 through a fourth sense resistor 204.
The four sensing resistors are electrically connected to form a circuit structure, as shown in fig. 2, the acceleration sensor 10 further includes a first input terminal Vin and a second input terminal GND, and a first output terminal Vout + and a second output terminal Vout -, a source of the first sensing resistor 201 is electrically connected to the first input terminal Vin, a drain of the first sensing resistor 201 is electrically connected to the first output terminal Vout + and a source of the second sensing resistor 202, a drain of the second sensing resistor 202 is electrically connected to the second input terminal GND and a drain of the third sensing resistor 203, a source of the third sensing resistor 203 is electrically connected to the second output terminal Vout - and a drain of the fourth sensing resistor 204, and a source of the fourth sensing resistor 204 is electrically connected to the first input terminal Vin.
Exemplary, as shown in FIG. 2, the resistance of the first sense resistor 201 is R1, the resistance of the second sense resistor 202 is R2, the resistance of the third sense resistor 203 is R3, the resistance of the fourth sense resistor 204 is R4, and the potential difference between the first output terminal Vout + and the second output terminal Vout - is at constant speed or in a stationary state, i.e. without acceleration。
When acceleration along the measured direction Y is provided, the four masses will not displace with the substrate 100 due to inertia, and the four sensing resistors that serve as connection will be slightly deformed, for example, the first mass 101 acts on the first sensing resistor 201 with a tensile force, and the resistance R1 of the first sensing resistor 201 changes under the piezoresistive effect. The second mass 102 applies a compressive force on the second sense resistor 202, and the resistance R2 of the second sense resistor 202 changes under the piezoresistive effect. Similar to the first sense resistor 201, the third sense resistor 203 receives a tensile force of the third mass 103, and the resistance R3 of the third sense resistor 203 also changes. Similar to the second sense resistor 202, the fourth sense resistor 203 is pressed by the fourth mass 104, and the resistance R4 of the fourth sense resistor 204 is also changed.
The acceleration here may be positive or negative, for example.
When acceleration is provided, the change of the resistance of the first sensing resistor 201 is recorded asThe resistance change of the second sensing resistor 202 is as followsThe resistance change of the third sense resistor 203 isThe resistance change of the fourth sense resistor 204 isSince the magnitude of the force of the mass block acting on the corresponding sense resistor is related to the magnitude of the acceleration, and the resistance change amount of the sense resistor is related to the magnitude of the force to which it is subjected, the resistance change amounts of the four sense resistors are all related to the magnitude of the acceleration. Under the acceleration, the potential difference between the first output terminal Vout + and the second output terminal Vout - is。
Based on this, the magnitude of the acceleration can be detected by calibrating the change condition of the potential difference of the first output terminal Vout + and the second output terminal Vout -.
Compared with the method for measuring the acceleration by using a single sensing resistor, in the embodiment of the application, four sensing resistors are electrically connected to form the circuit structure shown in fig. 2 for calculating the acceleration, so that the influence of other environmental factors on the resistance change of the sensing resistor can be avoided, the influence of other environmental factors on the acceleration calculation result can be avoided, and the accuracy of the calculation result is improved.
In addition, the four sensing resistors are all high-electron mobility transistors, the piezoresistive coefficient is larger, the sensitivity is higher, and the resistance change is more obvious under the same acting force, so that the acceleration sensor 10 has higher sensitivity. And, the high electron mobility transistor has high reliability in both low and high temperature environments, so that the reliability of the acceleration sensor 10 can be improved.
In some embodiments, as shown in fig. 1, the acceleration sensor 10 further comprises a plurality of cantilever structures 11, the mass comprising a first end and a second end opposite in a first direction X, the first direction X being parallel to the plane of the substrate 100. The first end of the first mass 101 is connected to the base 100 through a first sense resistor 201, and the first end of the first mass 101 is also connected to the base 100 through the cantilever structure 11.
The first end of the second mass 102 is connected to the base 100 via a second sense resistor 202, and the first end of the second mass 102 is also connected to the base 100 via the cantilever structure 11.
The second end of the third mass 103 is connected to the base 100 via a third sense resistor 203, and the second end of the third mass 103 is also connected to the base 100 via the cantilever structure 11.
The second end of the fourth mass 104 is connected to the base 100 via a fourth sense resistor 204, and the second end of the fourth mass 104 is also connected to the base 100 via the cantilever structure 11.
The cantilever structure 11 includes a first side and a second side opposite along a second direction Y, the first sensing resistor 201 and the third sensing resistor 203 are both located on the first side of the corresponding cantilever structure 11, the second sensing resistor 202 and the fourth sensing resistor 204 are both located on the second side of the corresponding cantilever structure 11, the second direction Y intersects the first direction X, and the second direction Y is parallel to a plane where the substrate is located.
In connection with the orientation shown in fig. 1, the above-mentioned "first end of the mass in the first direction X" may be understood as the left end of the mass in the first direction X, and "second end of the mass in the first direction X" may be understood as the right end of the mass in the first direction X. The "first side of the cantilever structure 11 in the second direction Y" may be understood as being below the cantilever structure 11 in the second direction Y, and the "first side of the cantilever structure 11 in the second direction Y" may be understood as being above the cantilever structure 11 in the second direction Y.
The cantilever structure 11 plays a role in connecting and supporting the mass block, and is beneficial to avoiding the damage of the sensing resistor caused by overlarge force of the mass block on the corresponding sensing resistor when the acceleration is overlarge. And, the surface of the cantilever structure 11 can be further designed with a running line so that four induction resistors are electrically connected to form an equivalent circuit as shown in fig. 2.
Based on the above positional relationship, when acceleration along the detected direction Y is provided, the stress of the first sensing resistor 201 and the stress of the third sensing resistor 203 have a certain similarity, the stress of the second sensing resistor 202 and the stress of the fourth sensing resistor 204 have a certain similarity, and under the piezoresistive effect, the resistance value of the sensing resistor is related to the stress thereof, so that the characteristic of the stress similarity is beneficial to simplifying an equivalent circuit, further making the calculation of the acceleration more concise, and improving the accuracy of the detection result.
In some embodiments, as shown in fig. 1, the acceleration sensor 10 further includes a connection arm 12, and the sensing resistor is connected to the base 100 through the connection arm 12.
The connecting arm 12 can also play a role in connection and support, and as shown in fig. 1, for example, the thicker the connecting arm 12, the better the supporting effect, the less likely deformation will occur, so that the force of the mass block acting on the corresponding sensing resistor can cause deformation at the sensing resistor to the greatest extent and cause resistance change of the sensing resistor, avoiding that acting force is conducted to the substrate 100 through the connecting arm 12, and being beneficial to improving the sensitivity of the acceleration sensor 10.
In some embodiments, as shown in fig. 3, the acceleration sensor 10 further includes a substrate 21, where the substrate 21 includes a first surface P1 and a second surface P2 opposite to each other, and the base 100, the plurality of sensing resistors, and the plurality of masses are disposed on the first surface P1. The substrate 21 further includes a cavity K0 therethrough, and the orthographic projections of the plurality of sensing resistors on the first surface P1 are located within the orthographic projection of the cavity K0 on the first surface P1.
With reference to fig. 1, it will be understood that the substrate 21 is not included in the film structure of the sense resistor along the direction Z, and the substrate 21 is included in the film structure of the mass along the direction Z. The substrate 21 may increase the mass of the mass, resulting in a greater force of the mass on the sense resistor, due to the greater mass and greater force at the same acceleration. In addition, the orthographic projection of the sensing resistor on the first surface P1 is located in the orthographic projection range of the cavity K0 on the first surface P1, and by setting the cavity K0, the conduction of acting force through the film layer of the substrate 21 can be reduced, so that the force of the mass block acting on the sensing resistor causes deformation of the sensing resistor as much as possible, and further, the potential difference between two output ends of the equivalent circuit is changed, thereby being beneficial to improving the sensitivity of the acceleration sensor 10.
In some embodiments, as shown in fig. 3, the acceleration sensor 10 further includes a substrate 22 disposed on the second surface P2, where the substrate 22 includes a third surface P3 adjacent to the substrate 21, the third surface P3 is provided with a groove T0, and orthographic projections of the plurality of sensing resistors and the plurality of masses on the third surface P3 are located in a region where the groove T0 is located.
The substrate 22 provides a flat surface for the acceleration sensor 10, and the grooves T0 are arranged so that the mass and the corresponding sense resistor are in a floating structure, and the mass is connected with the substrate 100 through the sense resistor. In the case of acceleration, the possibility of the mass being subjected to a force being conducted through the substrate 22 is avoided, but rather the mass and the sense resistor interact, causing the sense resistor to deform. The provision of the trench T0 on the substrate 22 is advantageous in providing the sensitivity of the acceleration sensor 10.
In some embodiments, as shown in fig. 3, the sensing resistor further includes a gate G disposed between the source S and the drain D of the sensing resistor.
In the embodiment of the present application, the four sensing resistors are all high electron mobility transistors, and by setting the gate G and applying a voltage equal to the threshold voltage of the transistor on the gate G, the compensation of the sensing resistor equivalent to the high electron mobility transistor can be realized, so that the equivalent circuit shown in fig. 2 is closer to an ideal equivalent effect, and the sensitivity of the acceleration sensor 10 is further improved.
In some embodiments, as shown in fig. 3, the sensing resistor further includes a channel layer 23 and a barrier layer 24 that are stacked, where a material of the channel layer 23 includes at least one of gallium nitride, gallium arsenide, or indium gallium arsenide, and a material of the barrier layer 24 includes at least one of indium gallium nitride, aluminum gallium nitride, indium phosphide, aluminum gallium arsenide, or indium aluminum arsenide.
The sensing resistor formed by the materials takes two-dimensional electron gas as conductive ions, has higher reliability in low-temperature and high-temperature environments, has larger pressure-sensitive coefficient and higher sensitivity, and is beneficial to improving the reliability and the sensitivity of the acceleration sensor 10.
In a second aspect, an embodiment of the present application further provides a method for manufacturing an acceleration sensor, where the method includes forming a substrate 100, a plurality of sensing resistors, and a plurality of masses. The sensing resistors comprise a first sensing resistor 201, a second sensing resistor 202, a third sensing resistor 203 and a fourth sensing resistor 204, the plurality of mass blocks comprise a first mass block 101, a second mass block 102, a third mass block 103 and a fourth mass block 104, the first mass block 101 is connected with the substrate 100 through the first sensing resistor 201, the second mass block 102 is connected with the substrate 100 through the second sensing resistor 202, the third mass block 103 is connected with the substrate 100 through the third sensing resistor 203, and the fourth mass block 104 is connected with the substrate 100 through the fourth sensing resistor 204. The acceleration sensor 10 further includes a first input terminal Vin and a second input terminal GND, and a first output terminal Vout + and a second output terminal Vout -, where the plurality of sensing resistors are all high electron mobility transistors, a drain of the first sensing resistor 201 is electrically connected to a source of the first output terminal Vout + and the second sensing resistor 202, a drain of the second sensing resistor 202 is electrically connected to a drain of the second input terminal GND and the third sensing resistor 203, a source of the third sensing resistor 203 is electrically connected to a drain of the second output terminal Vout - and the fourth sensing resistor 204, and a source of the fourth sensing resistor 204 is electrically connected to the first input terminal Vin.
The acceleration sensor 10 thus formed can electrically connect four sense resistors to form a circuit structure as shown in fig. 2 for calculating acceleration, so that the influence of other environmental factors on the resistance variation of the sense resistors can be avoided, and further, the influence of other environmental factors on the calculation result of the acceleration can be avoided, thereby being beneficial to improving the accuracy of the calculation result.
And, four sense resistors are all high electron mobility transistors, and the piezoresistance coefficient is great, the sensitivity is higher, and the resistance change is comparatively obvious under the same effort to can make acceleration sensor 10 have higher sensitivity, and high electron mobility transistors all have higher reliability in low temperature and high temperature environment, thereby can improve acceleration sensor 10's reliability.
Exemplary, as shown in fig. 4, fig. 4 is a flowchart of a method for preparing an acceleration sensor according to an embodiment of the present application, and fig. 5 to fig. 14 are each a step diagram of preparing an acceleration sensor according to an embodiment of the present application.
In some embodiments, the method for forming the substrate 100, the plurality of sensing resistors, and the plurality of masses includes steps S10 to S40 as follows:
in step S10, as shown in FIG. 5, a channel layer 23 is formed on a substrate 21 to obtain a base body 100.
Illustratively, the substrate 21 includes opposing first and second surfaces P1, P2. To avoid lattice mismatch and dislocation, a buffer layer 25 is generally disposed on the first surface P1 of the substrate 21, and then a channel layer 23 is formed on a side of the buffer layer 25 away from the substrate 21.
The substrate 21 is typically a silicon substrate or may be a sapphire substrate. The material of the channel layer 23 may be gallium nitride.
In step S20, as shown in FIG. 6, a barrier layer 24 is formed on the side of the channel layer 23 remote from the substrate 21.
Illustratively, the material of the barrier layer 24 may be aluminum gallium nitride, and the size and morphology of the barrier layer 24 may be reasonably designed according to requirements.
In step S30, as shown in FIG. 7-FIG. 9, a source S and a drain D are formed on the side of the barrier layer 24 away from the substrate 21 to obtain a plurality of sense resistors.
To make a better electrical contact, an ohmic contact layer 26 may be first formed on the barrier layer 24, as shown in fig. 7.
Thereafter, as shown in fig. 8, a first passivation layer 27 is formed, and the first passivation layer 27 exposes a portion of the ohmic contact layer 26.
Then, as shown in fig. 9, a source electrode S and a drain electrode D are formed. In some embodiments, a gate G is also formed.
Through reasonable wiring design, the source electrode S and the drain electrode D of the plurality of sensing resistors are respectively and correspondingly electrically connected to form an equivalent circuit shown in fig. 2.
Then, as shown in fig. 10, a second passivation layer 28 is formed to insulate and protect the plurality of sensing resistors and the routing design. The second passivation layer 28 forms a suitable pad opening for connection to an external power source.
In step S40, as shown in FIG. 11-FIG. 12, the channel layer 23 and the substrate 21 are etched to obtain a plurality of mass blocks, the substrate 21 comprises a through cavity K0, and orthographic projections of a plurality of sense resistors on the substrate 21 are located in the area range where the cavity K0 is located.
Illustratively, as shown in fig. 11, the channel layer 23 is etched using an inductively coupled plasma etching process until the first surface P1 of the substrate 21 is exposed. This step etches the profile forming a plurality of masses and cantilever beams as shown in fig. 1.
As shown in fig. 12, deep silicon etching is used to etch the substrate 21 on the second surface P2 side of the substrate 21 to form a cavity K0, so that orthographic projections of a plurality of sense resistors on the substrate 21 are located in the area where the cavity K0 is located.
In order to form the connection relationship shown in fig. 1 and 3, in some embodiments, the preparation method further includes the following steps S50 to S60:
In step S50, as shown in FIG. 13, a trench T0 is formed in the surface of the substrate 22.
Illustratively, the dimension of the base 22 in the direction X is the same as the dimension of the substrate 21 in the direction X in step S10, and the dimension of the base 22 in the direction Y is the same as the dimension of the substrate 21 in the direction Y in step S10. That is, the front projection of the base 22 and the front projection of the substrate 21 may coincide.
The base 22 is etched according to the orthographic projection positions of the plurality of sensing resistors and the plurality of mass blocks on the substrate 21 to form a groove T0, so that the orthographic projections of the plurality of sensing resistors and the plurality of mass blocks on the substrate 21 are finally located in the area range of the projection of the groove T0 on the base 22.
In step S60, as shown in fig. 14, the base 22 may be bonded to the substrate 21 by a silicon-silicon bonding method, where the base 22 is located on a side of the substrate 21 away from the channel layer 23, and a surface of the base 22 with the trench T0 is close to the substrate 21, and the orthographic projections of the plurality of sensing resistors and the plurality of masses on the base 22 are located in a region where the trench T0 is located.
The preparation process of the preparation method is simpler, and the acceleration sensor 10 formed by the preparation method can lead the acting force of the mass block to cause deformation of the sensing resistor as much as possible instead of conduction through the substrate 21 or the substrate 22, thereby improving the sensitivity of the acceleration sensor 10.
The foregoing is merely illustrative of the embodiments of the present application, and the present application is not limited thereto, and any person skilled in the art will recognize that changes and substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. An acceleration sensor, characterized in that the acceleration sensor comprises a substrate, a plurality of sensing resistors and a plurality of mass blocks;
The plurality of sensing resistors comprise a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor, the plurality of mass blocks comprise a first mass block, a second mass block, a third mass block and a fourth mass block, the first mass block is connected with the base body through the first sensing resistor, the second mass block is connected with the base body through the second sensing resistor, the third mass block is connected with the base body through the third sensing resistor, and the fourth mass block is connected with the base body through the fourth sensing resistor;
The acceleration sensor further comprises a first input end, a second input end, a first output end and a second output end, wherein the sensing resistors are high-electron mobility transistors, the source electrode of the first sensing resistor is electrically connected with the first input end, the drain electrode of the first sensing resistor is electrically connected with the first output end and the source electrode of the second sensing resistor, the drain electrode of the second sensing resistor is electrically connected with the second input end and the drain electrode of the third sensing resistor, the source electrode of the third sensing resistor is electrically connected with the second output end and the drain electrode of the fourth sensing resistor, and the source electrode of the fourth sensing resistor is electrically connected with the first input end.
2. The acceleration sensor of claim 1, further comprising a plurality of cantilever structures, the mass comprising first and second ends opposite in a first direction, the first direction being parallel to a plane in which the substrate lies;
the first end of the first mass block is connected with the matrix through the first induction resistor, the first end of the first mass block is also connected with the matrix through the cantilever structure, the first end of the second mass block is connected with the matrix through the second induction resistor, the first end of the second mass block is also connected with the matrix through the cantilever structure, the second end of the third mass block is connected with the matrix through the third induction resistor, the second end of the third mass block is also connected with the matrix through the cantilever structure, the second end of the fourth mass block is connected with the matrix through the fourth induction resistor, and the second end of the fourth mass block is also connected with the matrix through the cantilever structure;
The cantilever structure comprises a first side and a second side which are opposite along a second direction, the first sensing resistor and the third sensing resistor are located on the first side of the corresponding cantilever structure, the second sensing resistor and the fourth sensing resistor are located on the second side of the corresponding cantilever structure, the second direction is intersected with the first direction, and the second direction is parallel to a plane where the substrate is located.
3. The acceleration sensor of claim 1, further comprising a connection arm, wherein the sensing resistor is connected to the base body via the connection arm.
4. The acceleration sensor of claim 1, further comprising a substrate comprising opposing first and second surfaces, the base, the plurality of sense resistors, and the plurality of masses being disposed on the first surface;
The substrate also includes a cavity therethrough, and the orthographic projections of the plurality of sense resistors on the first surface are within the orthographic projection of the cavity on the first surface.
5. The acceleration sensor of claim 4, further comprising a base arranged on the second surface, the base comprising a third surface close to the substrate, the third surface being provided with grooves;
And orthographic projections of the plurality of sensing resistors and the plurality of mass blocks on the third surface are positioned in the area range where the grooves are positioned.
6. The acceleration sensor of claim 1, wherein the sensing resistor further comprises a gate electrode, the gate electrode being arranged between the source and drain electrodes of the sensing resistor.
7. The acceleration sensor of claim 1, characterized in, that the sense resistor further comprises a channel layer and a barrier layer arranged in a stack;
The material of the channel layer comprises at least one of gallium nitride, gallium arsenide or indium gallium arsenide, and the material of the barrier layer comprises at least one of indium gallium nitride, aluminum gallium nitride, indium phosphide, aluminum gallium arsenide or indium aluminum arsenide.
8. The preparation method of the acceleration sensor is characterized by comprising the steps of forming a matrix, a plurality of induction resistors and a plurality of mass blocks;
The plurality of sensing resistors comprise a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor, the plurality of mass blocks comprise a first mass block, a second mass block, a third mass block and a fourth mass block, the first mass block is connected with the base body through the first sensing resistor, the second mass block is connected with the base body through the second sensing resistor, the third mass block is connected with the base body through the third sensing resistor, and the fourth mass block is connected with the base body through the fourth sensing resistor;
The acceleration sensor further comprises a first input end, a second input end, a first output end and a second output end, wherein the sensing resistors are high-electron mobility transistors, the source electrode of the first sensing resistor is electrically connected with the first input end, the drain electrode of the first sensing resistor is electrically connected with the first output end and the source electrode of the second sensing resistor, the drain electrode of the second sensing resistor is electrically connected with the second input end and the drain electrode of the third sensing resistor, the source electrode of the third sensing resistor is electrically connected with the second output end and the drain electrode of the fourth sensing resistor, and the source electrode of the fourth sensing resistor is electrically connected with the first input end.
9. The method of manufacturing of claim 8, wherein forming the substrate, the plurality of sense resistors, and the plurality of masses comprises:
Forming a channel layer on a substrate to obtain the matrix;
Forming a barrier layer on one side of the channel layer away from the substrate;
forming a source electrode and a drain electrode on one side of the barrier layer far away from the substrate to obtain a plurality of induction resistors;
And etching the channel layer and the substrate to obtain the plurality of mass blocks, wherein the substrate comprises a through cavity, and orthographic projections of the plurality of sensing resistors on the substrate are positioned in the area range where the cavity is positioned.
10. The method of manufacturing according to claim 9, characterized in that the method of manufacturing further comprises:
Forming a groove on the surface of the substrate;
And bonding the base with the substrate, wherein the base is positioned on one side of the substrate far away from the channel layer, the surface of the base with the groove is close to the substrate, and the orthographic projections of the plurality of induction resistors and the plurality of mass blocks on the base are positioned in the range of the area where the groove is positioned.
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| CN202411945214.6A CN119375512A (en) | 2024-12-27 | 2024-12-27 | Acceleration sensor and method for manufacturing the same |
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| CN202411945214.6A CN119375512A (en) | 2024-12-27 | 2024-12-27 | Acceleration sensor and method for manufacturing the same |
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| CN102243126A (en) * | 2011-04-14 | 2011-11-16 | 黑龙江大学 | Nano silicon thin film transistor pressure sensor |
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| CN113745326A (en) * | 2021-10-11 | 2021-12-03 | 清华大学 | Gallium nitride pressure sensor and preparation method thereof |
| US20230236013A1 (en) * | 2022-01-25 | 2023-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | 3-axis gyroscope with improved performance |
| CN118425558A (en) * | 2024-04-30 | 2024-08-02 | 大连理工大学 | GaN nanowire acceleration sensor with multistage stress isolation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102243126A (en) * | 2011-04-14 | 2011-11-16 | 黑龙江大学 | Nano silicon thin film transistor pressure sensor |
| CN112834782A (en) * | 2021-03-05 | 2021-05-25 | 陕西理工大学 | Distributed mass structure MEMS piezoresistive acceleration sensor chip |
| CN113745326A (en) * | 2021-10-11 | 2021-12-03 | 清华大学 | Gallium nitride pressure sensor and preparation method thereof |
| US20230236013A1 (en) * | 2022-01-25 | 2023-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | 3-axis gyroscope with improved performance |
| CN118425558A (en) * | 2024-04-30 | 2024-08-02 | 大连理工大学 | GaN nanowire acceleration sensor with multistage stress isolation structure |
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