CN112809170A - Silicon wafer cutting device and method - Google Patents
Silicon wafer cutting device and method Download PDFInfo
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- CN112809170A CN112809170A CN201911038413.8A CN201911038413A CN112809170A CN 112809170 A CN112809170 A CN 112809170A CN 201911038413 A CN201911038413 A CN 201911038413A CN 112809170 A CN112809170 A CN 112809170A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 168
- 239000010703 silicon Substances 0.000 title claims abstract description 168
- 238000005520 cutting process Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000007664 blowing Methods 0.000 claims abstract description 75
- 239000000428 dust Substances 0.000 claims abstract description 60
- 238000000605 extraction Methods 0.000 claims abstract description 31
- 235000012431 wafers Nutrition 0.000 claims description 197
- 238000006073 displacement reaction Methods 0.000 claims description 23
- 238000001179 sorption measurement Methods 0.000 claims description 18
- 230000000007 visual effect Effects 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 6
- 238000003698 laser cutting Methods 0.000 abstract description 9
- 239000002893 slag Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000004579 marble Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- Mechanical Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to the field of laser cutting, and discloses a silicon wafer cutting device and a silicon wafer cutting method, wherein the device comprises a laser beam module, a wafer fixing module, a blowing dust-extraction module and a kerf observation module; the laser beam module is provided with a laser ejection end, and is provided with a blowing and dust-extracting module which comprises a side blowing port, a straight blowing port and a dust-extracting port, wherein the side blowing port and the dust-extracting port are arranged on two opposite sides of the laser ejection end; the vertical blowing port is used for generating airflow towards the silicon wafer, the side blowing port is used for generating airflow flowing to the dust extraction port, and the dust extraction port is used for generating negative pressure in a specified pressure range so as to discharge dust from the dust extraction port; and the kerf observation module is used for observing or acquiring an image of a cutting part of the silicon wafer. The invention effectively removes dust generated during laser cutting by arranging the air blowing dust extraction module, prevents dust near the cutting seam from hanging slag, and realizes the precision processing of the silicon wafer by arranging the cutting seam observation module.
Description
Technical Field
The invention relates to the field of laser cutting, in particular to a silicon wafer cutting device and method.
Background
The silicon wafer is a brittle material, and has high hardness and high brittleness. The traditional silicon wafer cutting method mainly utilizes a high-speed rotating cutter wheel piece to cut, but the cutter wheel cutting method has more defects, such as low efficiency, large edge breakage of a cutting edge, uneven edge and the like, and the yield of a product is often influenced. The used knife flywheel is easy to wear and needs to be replaced regularly.
The laser scribing and cutting is that high-energy-density laser is irradiated on a workpiece, the gathered laser energy acts on the workpiece to be processed, the temperature of the processed part is rapidly raised, the processed part is melted and vaporized to form a cavity, and the cavity can move along with the laser beam to form a cutting seam. The laser scribing and cutting is a non-contact processing method, and cannot generate mechanical collision or mechanical stress with a processed workpiece, so that the processed workpiece cannot be damaged.
However, when the silicon wafer is cut by laser scribing and cutting, because the melting point and the boiling point of silicon are very high, vaporized silicon steam is quickly solidified around the cutting seam, slag adhering accumulation is formed, the control of the cutting line width and the cutting depth of the silicon wafer is seriously influenced, and the smoothness of the cutting end face of the silicon wafer is influenced.
Disclosure of Invention
The invention aims to provide a silicon wafer cutting device and a silicon wafer cutting method, and aims to solve the problems that in the prior art, when a silicon wafer is cut by laser scribing and cutting, slag adhering accumulation is easy to occur, so that the control of the cutting line width and depth of the silicon wafer cannot meet the requirements, and the smoothness of the cutting end face of the silicon wafer is not high.
In order to achieve the purpose, the invention adopts the technical scheme that: the silicon wafer cutting device comprises a laser beam module, a wafer fixing module, an air blowing and dust pumping module and a cutting and observing module;
the wafer fixing module is used for placing silicon wafers;
the laser beam module is used for generating a laser beam for cutting the silicon wafer, and is provided with a laser emitting end, and the laser emitting end is provided with a protective lens;
the blowing and dust-extracting module comprises a side blowing port, a straight blowing port and a dust-extracting port, and the side blowing port and the dust-extracting port are arranged on two opposite sides of the laser emitting end;
the vertical blowing port is used for generating airflow towards the silicon wafer, the side blowing port is used for generating airflow flowing to the dust extraction port, and the dust extraction port is used for generating negative pressure in a specified pressure range so as to discharge dust from the dust extraction port;
the kerf observation module is used for observing or acquiring an image of a cutting part of the silicon wafer.
Optionally, the laser processing device further comprises a two-dimensional linear motion module, wherein the two-dimensional linear motion module is used for driving the silicon wafer to move linearly along a preset motion direction, so that the laser beam acts on the surface of the silicon wafer to form a cutting seam.
Optionally, the silicon wafer polishing device further comprises a pulse rotation module, wherein the pulse rotation module is arranged on the two-dimensional linear motion module and is used for driving the silicon wafer to rotate so as to adjust the rotation angle of the silicon wafer.
Optionally, the device further includes a visual positioning module, where the visual positioning module is configured to measure a cutting angle of the silicon wafer in a specified direction, and calculate whether a difference between the cutting angle and a preset angle is zero, and if the difference is not zero, generate an angle adjustment signal according to the difference, and send the angle adjustment signal to the pulse rotation module, so that the pulse rotation module adjusts the rotation angle of the silicon wafer according to the angle adjustment signal.
Optionally, the wafer fixing module is disposed on the pulse rotating module;
the wafer fixing module comprises a sucker mounting plate and a sucker, wherein the sucker is mounted on the sucker mounting plate and provided with a plurality of adsorption grooves, and the diameter of the sucker is smaller than that of the silicon wafer.
Optionally, the laser beam module includes a laser light source and a laser light path, an initial light beam generated by the laser light source passes through the laser light path to form the laser beam, and a focal point of the laser beam is located on the silicon wafer;
the laser light path comprises a beam expanding lens, a laser emitting end and a plurality of reflectors, and the laser emitting end is provided with a focusing lens;
the straight blowing port is arranged between the side blowing port and the dust extraction port, the side blowing port and the dust extraction port are positioned on the same horizontal height, and the distance between the straight blowing port and the wafer fixing module is greater than that between the side blowing port and the wafer fixing module; the flow direction of the airflow generated by the side air blowing port and flowing to the dust extraction port is parallel to the silicon wafer.
Optionally, the power meter further comprises a power detection module, wherein the power detection module is provided with a power meter surface probe;
before the silicon wafer is cut, the power meter surface probe is moved to the focal position of the laser emitted by the laser beam module to determine first cutting parameters of the silicon wafer.
Optionally, the system further comprises an infrared ranging module, wherein the infrared ranging module comprises a displacement controller and a displacement sensor;
the displacement sensor is used for measuring the thickness of the silicon wafer, providing the thickness to a designated device, and generating a second cutting parameter of the silicon wafer according to the thickness by the designated device;
the displacement controller is used for receiving the second cutting parameter provided by the specified equipment and adjusting the position of the focal point of the laser beam in the vertical direction and the imaging position of the vision positioning module according to the second cutting parameter.
Optionally, the device further comprises a support module, and the two-dimensional linear motion module is arranged on the support module.
The invention also provides a silicon wafer cutting method, which comprises the following steps:
after the positions of the two-dimensional linear motion module, the wafer fixing module and the laser beam module are determined, placing a silicon wafer on a sucker of the wafer fixing module;
measuring the thickness of the silicon wafer through an infrared ranging module, and determining a second cutting parameter of the silicon wafer according to the thickness;
measuring a first cutting parameter of the silicon wafer through a power detection module;
adjusting the cutting focus of the laser beam module and the imaging focus of the visual positioning module according to the second cutting parameter, and determining the output power of the laser beam module according to the first cutting parameter;
controlling a pulse rotating module through the visual positioning module so that the current position of the silicon wafer is coincided with the preset position;
cutting the silicon wafer through the laser beam generated by the laser beam module, and controlling the silicon wafer to move according to the preset movement path through the two-dimensional linear movement module;
and the blowing and dust-extracting module is used for removing dust generated in the cutting process, and the kerf observation module is used for determining the current cutting condition of the silicon wafer.
The silicon wafer cutting device provided by the invention has the beneficial effects that: compared with the prior art, the silicon wafer cutting device provided by the invention has the advantages that the air blowing and dust extracting module is arranged, so that dust generated during laser cutting is effectively removed, dust near the cutting seam is prevented from adhering to slag, and meanwhile, the cutting seam observation module is arranged, so that the precise processing of the silicon wafer is realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic overall structure diagram of a silicon wafer dicing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a blowing and dust-extracting module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a wafer mounting module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a chuck of the wafer mounting module according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a laser optical path provided in an embodiment of the present invention;
fig. 6 is a schematic flow chart of a method for cutting a silicon wafer according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 and 2 together, a silicon wafer dicing apparatus according to the present invention will now be described. The silicon wafer cutting device comprises a laser beam module, a wafer fixing module 01, a blowing and dust-pumping module 02 and a lancing observation module 03:
the wafer fixing module 01 is used for placing silicon wafers;
the laser beam module is used for generating a laser beam for cutting the silicon wafer, and is provided with a laser emitting end 0421, and the laser emitting end 0421 is provided with a protective lens 031;
the blowing and dust-extracting module 02 comprises a side blowing port 021, a straight blowing port 023 and a dust-extracting port 022, wherein the side blowing port 021 and the dust-extracting port 022 are arranged on two opposite sides of the laser emitting end 0421;
the vertical blowing port 023 is used for generating airflow towards the silicon wafer, the side blowing port 021 is used for generating airflow towards the dust extraction port 022, and the dust extraction port 022 is used for generating negative pressure in a specified pressure range so as to discharge dust from the dust extraction port 022;
the kerf observation module 03 is configured to observe or acquire an image of a cut portion of the silicon wafer.
In this embodiment, the silicon wafer cutting apparatus includes a laser beam module, a wafer fixing module 01, a blowing and dust-extracting module 02, and a kerf observation module 03. And the wafer fixing module 01 is used for placing and fixing a silicon wafer. The silicon wafer is a flat wafer. The wafer fixing module 01 can be provided with a sucking disc 011 structure, and the position of a silicon wafer is fixed through negative pressure adsorption.
And the laser beam module is used for generating laser beams for cutting the silicon wafer. The laser beam module is provided with a laser emitting end 0421. The laser emitting end 0421 is provided with a protective lens 031. The protective lens 031 can prevent the optical lens (condenser lens) disposed at the laser emitting end 0421 from being contaminated. In one embodiment, the protection lens 031 is removably mounted on the laser emitting end 0421 so as to facilitate cleaning and maintenance of the protection lens 031. When the protection lens 031 is inserted into the laser emitting end 0421, it is necessary to ensure that the optical axis of the protection lens 031 overlaps with the laser beam.
The blowing and dust-extracting module 02 comprises a side blowing port 021, a straight blowing port 023 and a dust-extracting port 022. The side blowing port 021 and the dust extraction port 022 are disposed on opposite sides of the laser emitting end 0421. For example, if the side blowing port 021 is provided on the left side of the laser emission end 0421, the dust exhaust port 022 is provided on the right side of the laser emission end 0421. The straight blowing port 023 is provided at the lower end surface of the laser emitting end 0421 and is displaced from the optical axis of the laser beam (the optical axis when the laser beam leaves the laser emitting end 0421). The straight blowing port 023 may generate a gas flow toward the cut part of the silicon wafer. In some cases, the blow-through ports 023 may be vertically downward. The direct blowing port 023 can reduce the pollution of dust generated during cutting to the protective lens 031. The side blowing ports 021 can generate a flow of gas to the dust extraction port 022. The side blowing port 021 generates an air flow for blowing dust generated at the time of laser cutting toward the dust drawing port 022. The dust suction port 022 may generate a negative pressure in a designated pressure range to discharge dust from the dust suction port 022. The specified pressure range can be set according to actual needs. The blowing dust-pumping module 02 can timely remove dust or hanging slag generated in the cutting process, reduce the pollution of the dust to the protective lens 031 and improve the cutting quality of the silicon wafer.
And the kerf observation module 03 is used for observing or acquiring an image of a cutting part of the silicon wafer. The kerf observation module 03 is provided with an imaging sensing chip. The imaging sensor chip may be a CCD (Charge-coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) sensor. The center of the imaging induction chip is coaxial with the emitting direction of the laser beam. The kerf observation module 03 can be used for observing the situation of the cutting traces (the image of the cutting part of the silicon wafer is transmitted to a computer connected with the kerf observation module and the image of the cutting part of the silicon wafer is displayed on a computer screen) in the cutting process, and judging the deviation situation of the cutting position according to whether the real-time cutting traces are positioned at the center of the cutting path.
Optionally, as shown in fig. 1, the device further includes a two-dimensional linear motion module 05, where the two-dimensional linear motion module 05 is configured to drive the silicon wafer to move linearly along a preset motion direction, so that the laser beam acts on the surface of the silicon wafer to form a kerf.
In this embodiment, the two-dimensional linear motion module 05 may drive the silicon wafer to linearly move along a preset motion direction, so that the laser beam acts on the surface of the silicon wafer to form a cutting seam. The two-dimensional linear motion module 05 can adjust the motion direction and the motion speed according to actual cutting requirements.
Optionally, as shown in fig. 1 and 3, the device further includes a pulse rotation module 06, where the pulse rotation module 06 is disposed on the two-dimensional linear motion module 05, and the pulse rotation module 06 is configured to drive the silicon wafer to rotate so as to adjust a rotation angle of the silicon wafer.
In this embodiment, the pulse rotation module 06 is disposed on the two-dimensional linear motion module 05. In some cases, the direction of the cut of the silicon wafer is not parallel to the direction of motion of the motor. At this time, the pulse rotating module 06 needs to drive the silicon wafer to rotate, and the rotation angle of the silicon wafer is adjusted, so that the cutting direction of the silicon wafer is parallel to the movement direction of the motor (driving member for driving the two-dimensional linear movement module 05 to move).
Optionally, as shown in fig. 1, the apparatus further includes a visual positioning module 07, where the visual positioning module 07 is configured to measure a cutting angle of the silicon wafer in a specified direction, and calculate whether a difference between the cutting angle and a preset angle is zero, if the difference is not zero, generate an angle adjustment signal according to the difference, and send the angle adjustment signal to the pulse rotation module 06, so that the pulse rotation module 06 adjusts the rotation angle of the silicon wafer according to the angle adjustment signal.
In this embodiment, the visual positioning module 07 may be disposed above the silicon wafer and staggered from the kerf observation module 03. The vision positioning module 07 may take a picture containing a silicon wafer. Two mark points may be set in a scribe line in a designated direction (for example, Y direction) of the silicon wafer, and then an angle formed by the two mark points in the picture containing the silicon wafer and the center point of the silicon wafer, that is, a dicing angle, is calculated. It is then determined whether the difference between the cutting angle and a preset angle (which may be set to 0) is zero. If the difference is not zero, an angle adjusting signal is generated according to the difference, and the angle adjusting signal is sent to the pulse rotating module 06, so that the pulse rotating module 06 adjusts the rotation angle of the silicon wafer according to the angle adjusting signal. When the difference is zero, the cutting direction of the silicon wafer is parallel to the movement direction of the motor. Therefore, the cutting seam of the silicon wafer can be prevented from deviating, and the cutting quality of the silicon wafer is influenced.
Optionally, as shown in fig. 3 and 4, the wafer fixing module 01 is disposed on the pulse rotating module 06;
wafer fixed module 01 includes sucking disc mounting panel 012, sucking disc 011 install in on the sucking disc mounting panel 012, sucking disc 011 is provided with a plurality of adsorption tanks 0113, the diameter of sucking disc 011 is less than the diameter of silicon wafer.
In this embodiment, the wafer fixing module 01 is disposed on the pulse rotating module 06. Wafer fixed module 01 includes sucking disc mounting panel 012, sucking disc 011, and sucking disc 011 installs on sucking disc mounting panel 012.
The chuck 011 is processed with a flat edge mark 0112 for assisting in positioning a silicon wafer. The flat edge of the silicon wafer should be aligned as much as possible with the flat edge marks 0112 to reduce the visual alignment time. The circuit side faces upward when the silicon wafer is placed. The surface of the sucking disc 011 can be processed by 8 equal parts to form a plurality of adsorption grooves 0113 and adsorption supporting surfaces 0114 positioned between the adsorption grooves 0113 (the adsorption supporting surfaces 0114 are the groove edges of the adsorption grooves 0113). In one embodiment, the width of the adsorption groove 0113 is about 1.8mm, the depth is about 3mm, and the width of the adsorption support surface 0114 is about 4 mm. The bottom of the adsorption tank 0113 is connected with an exhaust device, so that a certain negative pressure can be formed in the adsorption tank 0113 to generate adsorption force on the silicon wafer. The proper width of the adsorption groove and the width of the adsorption supporting surface can enable the adsorption force of the sucker 011 on the silicon wafer to be more uniform, and the sucker is not easy to deform due to heat diffusion in the processing process. The upper surface of the adsorption support surface 0114 can be oxidized to increase the wear resistance of the chuck 011.
The diameter of the sucking disc 011 can be about 2mm less than the diameter of silicon wafer, so that the sucking disc 011 surface is prevented from being damaged due to the fact that laser acts on the sucking disc 011 surface in the cutting and scribing process.
The sucking disc 011 is provided with a sucking disc fixing hole 0111. The sucker mounting plate 012 can be provided with a plurality of sucker mounting holes 0121, such as 4 inches, 5 inches, 6 inches, 8 inches, etc. Different sized wafers need to be adapted to a correspondingly sized chuck 011. The sucking disc 011 is connected with a sucking disc mounting hole 0121 on the sucking disc mounting plate 012 through a sucking disc fixing hole 0111.
Optionally, as shown in fig. 5, the laser beam module includes a laser light source 041 and a laser light path 042, where an initial light beam generated by the laser light source 041 passes through the laser light path 042 to form the laser beam, and a focal point of the laser beam is located on the silicon wafer;
the laser light path 042 comprises a beam expander 0423, a laser emitting end 0421 and a plurality of reflectors 0424, and the laser emitting end 0421 is provided with a condenser lens;
the straight blowing port 023 is arranged between the side blowing port 021 and the dust extraction port 022, the side blowing port 021 and the dust extraction port 022 are located at the same horizontal height, and the distance between the straight blowing port 023 and the wafer fixing module 01 is greater than the distance between the side blowing port 021 and the wafer fixing module 01; the flow direction of the airflow generated by the side blowing port 021 and flowing to the dust extraction port 022 is parallel to the silicon wafer.
In this embodiment, the laser beam module includes a laser light source 041 and a laser light path 042. The initial light beam generated by the laser light source 041 forms a laser light beam after passing through the laser light path 042. When a silicon wafer is cut, the focus of a laser beam needs to be controlled to be on the silicon wafer. In one embodiment, the laser source 041 is an infrared laser with a power of 2-50W, the wavelength of the laser beam emitted by the laser source 041 is 1064nm, the pulse width is about 175-.
The laser light path 042 comprises a laser incidence end 0422, a beam expander 0423, a laser emission end 0421 and a plurality of reflectors 0424, and the laser emission end 0421 is provided with a condenser lens. Laser generated by the laser light source 041 is incident from the laser incident end 0422, reflected by the reflector 0424 and passes through the beam expander 0423 to increase the diameter of the laser; and is reflected by a reflecting mirror 0424 to be incident on a condenser lens of a laser emitting end 0421. The laser is focused on the focus of the condenser lens by the convergence of the condenser lens to form a laser beam which can be used for cutting silicon wafers. It should be noted that the reflecting mirror 0424 above the laser emitting end 0421 may be transparent, so that the imaging sensing chip of the kerf observation module 03 can photograph the cutting portion of the silicon wafer to obtain an image of the cutting portion.
In the air blowing and dust extracting module 02, the straight air blowing port 023 may be disposed between the side air blowing port 021 and the dust extracting port 022. The side blowing port 021 and the dust extraction port 022 are located at the same level, and the distance between the straight blowing port 023 and the wafer fixing module 01 is greater than the distance between the side blowing port 021 and the wafer fixing module 01. The flow direction of the gas flow generated from the side blowing port 021 and flowing to the dust extraction port 022 is parallel to the silicon wafer. The dust generated during laser cutting can be taken away by the airflow between the side blowing port 021 and the dust extraction port 022. The airflow has a drainage function, and dust generated during laser cutting is discharged through the dust extraction port 022.
Optionally, as shown in fig. 1, the power meter further includes a power detection module 08, where the power detection module 08 is provided with a power meter surface probe;
before the silicon wafer is cut, the power meter surface probe is moved to the focal position of the laser emitted by the laser beam module to determine first cutting parameters of the silicon wafer.
In this embodiment, the power detection module 08 may be configured to detect thermal power of a focal position of the laser beam. Since the laser light source 041 may be depleted, its output power is lower than the rated value, and the thermal power of the focal position of the laser beam is reduced. This may result in the failure of the silicon wafer cut by the focal point to meet the predetermined processing standard. Therefore, before dicing a silicon wafer, it is necessary to detect the thermal power of the focal position of the laser beam using the power detection module 08. The first cutting parameter is used to adjust the output power of the laser light source 041, so that the thermal power of the focal point of the laser beam is equal to the preset power value.
Optionally, as shown in fig. 1, the system further includes an infrared ranging module, where the infrared ranging module includes a displacement controller 092 and a displacement sensor 091;
the displacement sensor 091 is used for measuring the thickness of the silicon wafer, providing the thickness for a specified device, and generating a second cutting parameter of the silicon wafer according to the thickness by the specified device;
the displacement controller 092 is configured to receive the second cutting parameter provided by the designated device, and adjust the position of the focal point of the laser beam in the vertical direction and the imaging position of the vision positioning module 07 according to the second cutting parameter.
In this embodiment, the infrared distance measuring module includes a displacement controller 092 and a displacement sensor 091. The displacement controller 092 may be a high-precision laser displacement controller 092, and the displacement sensor 091 may be a high-precision laser displacement sensor 091. In one embodiment, the displacement sensor 091 can be used to measure the thickness at 5 different locations on the silicon wafer. The designated device may be an industrial personal computer. And the industrial personal computer connected with the infrared ranging module reads the thickness measured by the displacement sensor 091, calculates the average thickness value and then generates a second cutting parameter. The industrial personal computer sends the generated second cutting parameter to the displacement controller 092. The displacement controller 092 adjusts the position of the focal point of the laser beam in the vertical direction according to the second cutting parameter to ensure that the focal point of the laser beam acts on the silicon wafer. The displacement controller 092 adjusts the imaging position of the vision positioning module 07 according to the second cutting parameter to improve the imaging quality of the vision positioning module 07.
Optionally, as shown in fig. 1, the device further includes a support module 10, and the two-dimensional linear motion module 05 is disposed on the support module 10.
In this embodiment, the silicon wafer cutting apparatus may further include a support module 10 configured to support the two-dimensional linear motion module 05 and other modules. The support module 10 may be a marble platform.
The embodiment of the invention effectively removes dust generated during laser cutting by arranging the air blowing dust extraction module, prevents dust near the cutting seam from adhering to slag, and realizes the precise processing of the silicon wafer by arranging the cutting seam observation module.
As shown in fig. 6, an embodiment of the present invention further provides a method for cutting a silicon wafer, including:
s10, after the positions of the two-dimensional linear motion module, the wafer fixing module and the laser beam module are determined, placing a silicon wafer on a sucker of the wafer fixing module;
s20, measuring the thickness of the silicon wafer through an infrared ranging module, and determining a second cutting parameter of the silicon wafer according to the thickness;
s30, measuring a first cutting parameter of the silicon wafer through a power detection module;
s40, adjusting the cutting focus of the laser beam module and the imaging focus of the visual positioning module according to the second cutting parameter, and determining the output power of the laser beam module according to the first cutting parameter;
s50, controlling a pulse rotation module through the visual positioning module to enable the current position of the silicon wafer to coincide with the preset position;
s60, cutting the silicon wafer through the laser beam generated by the laser beam module, and controlling the silicon wafer to move according to the preset movement path through the two-dimensional linear movement module;
and S70, removing dust generated in the cutting process through the air blowing dust extraction module, and determining the current cutting condition of the silicon wafer through the kerf observation module.
In this embodiment, before laser cutting, the precision of the two-dimensional linear motion module, the levelness of the chuck in the wafer fixing module, and the perpendicularity between the laser beam passing through the laser optical path and the surface of the chuck can be corrected. After the calibration is finished, the silicon wafer is placed on the sucking disc of the wafer fixing module, and the corresponding exhaust system is started to enable the sucking disc to generate negative pressure to suck the silicon wafer.
And then measuring the thickness of the silicon wafer through the infrared ranging module to obtain a second cutting parameter so as to determine the cutting position of the silicon wafer in the z-axis direction and the imaging focus of the visual positioning module.
And measuring a first cutting parameter of the silicon wafer through the power detection module so as to adjust the output power of the laser beam module.
After the adjustment is finished, the pulse rotating module is controlled through the visual positioning module, so that the current position of the silicon wafer is coincided with the preset position. The silicon wafer is cut by the laser beams generated by the laser beam module, and the silicon wafer is controlled to move according to a preset movement path by the two-dimensional linear movement module, so that the laser beams scratch the surface of the silicon wafer. And finally, removing dust generated in the cutting process through the air blowing and dust extracting module, and determining the current cutting condition of the silicon wafer through the kerf observing module.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A silicon wafer cutting device is characterized by comprising a laser beam module, a wafer fixing module, a blowing and dust-extracting module and a kerf observing module;
the wafer fixing module is used for placing silicon wafers;
the laser beam module is used for generating a laser beam for cutting the silicon wafer, and is provided with a laser emitting end, and the laser emitting end is provided with a protective lens;
the blowing and dust-extracting module comprises a side blowing port, a straight blowing port and a dust-extracting port, and the side blowing port and the dust-extracting port are arranged on two opposite sides of the laser emitting end;
the vertical blowing port is used for generating airflow towards the silicon wafer, the side blowing port is used for generating airflow flowing to the dust extraction port, and the dust extraction port is used for generating negative pressure in a specified pressure range so as to discharge dust from the dust extraction port;
the kerf observation module is used for observing or acquiring an image of a cut part of the silicon wafer.
2. The silicon wafer cutting apparatus of claim 1, further comprising a two-dimensional linear motion module for moving the silicon wafer linearly in a predetermined motion direction so that the laser beam acts on the surface of the silicon wafer to form the slits.
3. The silicon wafer cutting device according to claim 2, further comprising a pulse rotation module disposed on the two-dimensional linear motion module, the pulse rotation module being configured to rotate the silicon wafer to adjust a rotation angle of the silicon wafer.
4. The silicon wafer cutting apparatus of claim 3, further comprising a vision positioning module, wherein the vision positioning module is configured to measure a cutting angle of the silicon wafer in a designated direction, calculate whether a difference between the cutting angle and a preset angle is zero, generate an angle adjustment signal according to the difference if the difference is not zero, and send the angle adjustment signal to the pulse rotation module, so that the pulse rotation module adjusts the rotation angle of the silicon wafer according to the angle adjustment signal.
5. The silicon wafer dicing apparatus according to claim 3, wherein the wafer fixing module is disposed above the pulse rotating module;
the wafer fixing module comprises a sucker mounting plate and a sucker, wherein the sucker is mounted on the sucker mounting plate and provided with a plurality of adsorption grooves, and the diameter of the sucker is smaller than that of the silicon wafer.
6. The silicon wafer dicing apparatus according to claim 1, wherein the laser beam module includes a laser light source and a laser light path, an initial beam generated by the laser light source passing through the laser light path forms the laser beam, and a focal point of the laser beam is on the silicon wafer;
the laser light path comprises a beam expanding lens, a laser emitting end and a plurality of reflectors, and the laser emitting end is provided with a focusing lens;
the straight blowing port is arranged between the side blowing port and the dust extraction port, the side blowing port and the dust extraction port are positioned on the same horizontal height, and the distance between the straight blowing port and the wafer fixing module is greater than that between the side blowing port and the wafer fixing module; the flow direction of the airflow generated by the side air blowing port and flowing to the dust extraction port is parallel to the silicon wafer.
7. The silicon wafer dicing apparatus of claim 6, further comprising a power detection module provided with a power meter surface probe;
before the silicon wafer is cut, the power meter surface probe is moved to the focal position of the laser emitted by the laser beam module to determine first cutting parameters of the silicon wafer.
8. The silicon wafer cutting apparatus of claim 4, further comprising an infrared ranging module, the infrared ranging module comprising a displacement controller and a displacement sensor;
the displacement sensor is used for measuring the thickness of the silicon wafer, providing the thickness to a designated device, and generating a second cutting parameter of the silicon wafer according to the thickness by the designated device;
the displacement controller is used for receiving the second cutting parameter provided by the specified equipment and adjusting the position of the focal point of the laser beam in the vertical direction and the imaging position of the vision positioning module according to the second cutting parameter.
9. The silicon wafer dicing apparatus of claim 2, further comprising a support module, the two-dimensional linear motion module being disposed above the support module.
10. A method of dicing a silicon wafer, comprising:
after the positions of the two-dimensional linear motion module, the wafer fixing module and the laser beam module are determined, placing a silicon wafer on a sucker of the wafer fixing module;
measuring the thickness of the silicon wafer through an infrared ranging module, and determining a second cutting parameter of the silicon wafer according to the thickness;
measuring a first cutting parameter of the silicon wafer through a power detection module;
adjusting the cutting focus of the laser beam module and the imaging focus of the visual positioning module according to the second cutting parameter, and determining the output power of the laser beam module according to the first cutting parameter;
controlling a pulse rotating module through the visual positioning module so as to enable the current position of the silicon wafer to coincide with a preset position;
cutting the silicon wafer through the laser beam generated by the laser beam module, and controlling the silicon wafer to move according to the preset movement path through the two-dimensional linear movement module;
and the blowing and dust-extracting module is used for removing dust generated in the cutting process, and the kerf observation module is used for determining the current cutting condition of the silicon wafer.
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Application publication date: 20210518 |