CN112768427B - Packaging structure and packaging method of gallium nitride HEMT - Google Patents
Packaging structure and packaging method of gallium nitride HEMT Download PDFInfo
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- CN112768427B CN112768427B CN201911071736.7A CN201911071736A CN112768427B CN 112768427 B CN112768427 B CN 112768427B CN 201911071736 A CN201911071736 A CN 201911071736A CN 112768427 B CN112768427 B CN 112768427B
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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Abstract
The invention discloses a packaging structure and a packaging method of a gallium nitride HEMT (high Electron mobility transistor), wherein a grid electrode of a gallium nitride HEMT chip to be packaged is positioned between a source electrode and a drain electrode, a second conductive bonding pad, a third conductive bonding pad and a base plate pin area are arranged on one side of the chip, which is close to the source electrode, a first conductive bonding pad is positioned on the other side of the chip, which is close to the drain electrode, the drain electrode and the first conductive bonding pad are electrically connected through a first electrical connecting part, the source electrode and the base plate pin area are electrically connected through a second electrical connecting part, the source electrode and the second conductive bonding pad are electrically connected through a fourth electrical connecting part, and the grid electrode and the third conductive bonding pad are electrically connected through a third electrical connecting part, so that the voltage-withstanding distance between all electrodes of the chip can be met; the source electrode and the second conductive bonding pad are electrically connected through a fourth electrical connection part to form a Kelvin source electrode so as to reduce parasitic inductance of a driving loop; the gallium nitride HEMT chip to be packaged is fixed and electrically connected to the heat dissipation area, so that the heat dissipation performance of the packaging structure is improved.
Description
Technical Field
The present invention relates to the field of semiconductor chip packaging technology, and more particularly, to a gallium nitride HEMT (high electron mobility transistor) packaging structure and a packaging method.
Background
As a typical representative of the third generation of semiconductor materials, wide band gap semiconductor gallium nitride (GaN) has many excellent properties not possessed by silicon materials, is an excellent semiconductor material for high frequency, high voltage and high power applications, and has a wide application prospect in civil and military fields.
Although gallium nitride, which is a wide band gap semiconductor material, has great advantages in performance over silicon materials, the conventional power device packaging technology is designed based on conventional silicon material power devices, and the performance of the semiconductor device is affected when the semiconductor device prepared from gallium nitride, which is a wide band gap semiconductor material, is packaged by the conventional packaging technology.
Disclosure of Invention
In view of the above, the invention provides a gallium nitride HEMT packaging structure and a packaging method, which improve the performance of the gallium nitride HEMT packaging structure.
In order to achieve the above object, the present invention provides the following technical solutions:
A package structure of a gallium nitride HEMT, the package structure comprising:
The gallium nitride HEMT chip to be packaged is characterized in that the front surface of the gallium nitride HEMT chip to be packaged is provided with a grid electrode, a source electrode and a drain electrode; the grid electrode is positioned between the source electrode and the drain electrode;
the conductive base plate is provided with a heat dissipation area and a base plate pin area for fixing the gallium nitride HEMT chip to be packaged;
The lead frame is provided with a first conductive bonding pad, a second conductive bonding pad and a third conductive bonding pad; the conductive base plate is fixed relative to the lead frame;
The first conductive bonding pad is positioned on one side of the to-be-packaged gallium nitride HEMT chip with the drain electrode, and the second conductive bonding pad and the third conductive bonding pad are positioned on one side of the to-be-packaged gallium nitride HEMT chip with the source electrode; the back surface of the gallium nitride HEMT chip to be packaged is fixedly and electrically connected with the heat dissipation area; the drain electrode is electrically connected with the first conductive bonding pad through a first electrical connection part, the source electrode is electrically connected with the base plate pin area through a second electrical connection part, the grid electrode is electrically connected with the third conductive bonding pad through a third electrical connection part, and the source electrode is also electrically connected with the second conductive bonding pad through a fourth electrical connection part.
Preferably, in the above package structure, the base pad pin area, the first conductive pad, the second conductive pad, and the third conductive pad each include a bonding area and a pin integral with the bonding area;
The welding areas of the first conductive bonding pad, the second conductive bonding pad and the third conductive bonding pad are provided with bending parts, and the connecting parts of the welding areas and the pins are higher than the pins.
Preferably, in the above package structure, the first conductive pad is electrically connected to the drain electrode through at least one of the first electrical connection members;
the first conductive pad includes: a drain bonding region and at least one drain lead integral with the drain bonding region;
Wherein the drain electrode bonding area is electrically connected with the drain electrode through the first electrical connection part.
Preferably, in the above package structure, the substrate pin area is electrically connected to the source electrode through at least one second electrical connection member, and the second conductive pad is electrically connected to the source electrode through one fourth electrical connection member;
The base pin area includes: a source pad and at least one source lead integral with the source pad; wherein the source electrode welding area is electrically connected with the source electrode through the second electric connecting component;
The second conductive pad includes: a Kelvin source bonding pad and a Kelvin source; wherein the Kelvin source bonding pad is electrically connected to the source through the fourth electrical connection feature.
Preferably, in the above package structure, the third conductive pad is electrically connected to the gate electrode through one of the third electrical connection parts.
Preferably, in the above package structure, the third conductive pad includes: a gate pad and a gate lead;
Wherein the gate pad is electrically connected to the gate electrode through the third electrical connection member.
Preferably, in the above package structure, the back surface of the gallium nitride HEMT chip to be packaged is fixed with the heat dissipation area by soft solder.
Preferably, in the above package structure, the package structure further includes: and the packaging layer is used for carrying out sealing protection on the gallium nitride HEMT chip to be packaged, and the packaging layer covers the gallium nitride HEMT chip to be packaged and all the electric connection parts.
Preferably, in the above package structure, the package layer is an epoxy resin layer.
The invention also provides a packaging method of the gallium nitride HEMT, which comprises the following steps:
providing a gallium nitride HEMT chip to be packaged; the front surface of the gallium nitride HEMT chip to be packaged is provided with a grid electrode, a source electrode and a drain electrode; the grid electrode is positioned between the source electrode and the drain electrode;
Fixing the gallium nitride HEMT chip to be packaged on a frame base plate, wherein the frame base plate is provided with a conductive base plate and a lead frame which are relatively fixed; the conductive base plate is provided with a heat dissipation area and a base plate pin area for fixing the gallium nitride HEMT chip to be packaged; the back surface of the gallium nitride HEMT chip to be packaged is fixedly and electrically connected with the heat dissipation area; the lead frame is provided with a first conductive pad, a second conductive pad and a third conductive pad; the conductive base plate is fixed relative to the lead frame; the first conductive bonding pad is positioned at one side of the to-be-packaged gallium nitride HEMT chip with the drain electrode, and the base plate pin area, the second conductive bonding pad and the third conductive bonding pad are positioned at one side of the to-be-packaged gallium nitride HEMT chip with the source electrode;
electrically interconnecting the gallium nitride HEMT chip to be packaged with each conductive bonding pad and the base plate pin area through a wire bonding process; the drain electrode is electrically connected with the first conductive bonding pad through a first electrical connection part, the source electrode is electrically connected with the base plate pin area through a second electrical connection part, the grid electrode is electrically connected with the third conductive bonding pad through a third electrical connection part, and the source electrode is also electrically connected with the second conductive bonding pad through a fourth electrical connection part.
Preferably, in the above packaging method, the providing a gallium nitride HEMT chip to be packaged includes:
Providing a wafer;
And after thinning the back surface of the wafer, dividing the wafer into a plurality of gallium nitride HEMT chips to be packaged through a scribing process.
Preferably, in the above packaging method, the packaging method further includes:
And the packaging layer for sealing and protecting the gallium nitride HEMT chip to be packaged is formed through a plastic packaging process, so that the packaging layer covers the gallium nitride HEMT chip to be packaged and all the electric connection parts.
As can be seen from the above description, in the packaging structure and the packaging method for a gallium nitride HEMT provided by the technical scheme of the present invention, the gallium nitride HEMT chip to be packaged is packaged by adopting the transverse structure, and the gate is located between the source and the drain, so that the second conductive pad, the third conductive pad and the base pin area are located on the same side of the gallium nitride HEMT chip to be packaged and close to the source, the first conductive pad is located on the other side of the gallium nitride HEMT chip to be packaged and close to the drain, the drain is electrically connected with the first conductive pad through the first electrical connection component, the source is electrically connected with the base pin area through the second electrical connection component, the source is electrically connected with the second conductive pad through the fourth electrical connection component, the gate is electrically connected with the third conductive pad through the third electrical connection component, and the difference of larger current between the drain and the gate is fully considered, and the smaller current between the source and the gate is less, so that the withstand voltage distance between each electrode of the gallium nitride HEMT chip to be packaged is satisfied, and the electrical performance index of the packaging structure is satisfied. And the fourth electric connecting part is used for electrically connecting the source electrode and the second conductive bonding pad to form a Kelvin source electrode (Kelvin source), so that parasitic inductance of a driving loop can be reduced, loss caused by the parasitic inductance can be reduced, and the electric performance index of the packaging structure is further improved. Meanwhile, the conductive base plate comprises a heat dissipation area and a base plate pin area, the gallium nitride HEMT chip to be packaged is fixed and electrically connected to the heat dissipation area, and the base plate pin area is electrically connected with the source electrode through the semiconductor substrate of the chip at the back of the chip, so that the conductive base plate has the functions of a heat dissipation sheet and a base island, and the heat dissipation performance of the packaging structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a typical PDFN (Power Dual Flat No-lead, dual flat no-lead power package) package structure;
FIG. 2 is a top view of the package structure shown in FIG. 1 after plastic encapsulation;
Fig. 3 is a schematic diagram of a package structure of a gallium nitride HEMT according to an embodiment of the present invention;
FIG. 4 is a top view of the package structure shown in FIG. 3 after plastic encapsulation;
fig. 5 is a schematic diagram of another package structure of a gallium nitride HEMT according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
At present, conventional power device packaging technologies are designed based on conventional silicon material power devices, as shown in fig. 1 and fig. 2, fig. 1 is a schematic diagram of a typical packaging structure of a PDFN (Power Dual Flat No-lead, dual-row flat no-lead power package), fig. 2 is a top view of the packaging structure shown in fig. 1 after plastic packaging, fig. 1 is a front top view of the packaging structure before plastic packaging, and fig. 1 is a side view of the packaging structure before plastic packaging, fig. 2 is a front top view of the packaging structure after plastic packaging, and fig. 2 is a back top view of the packaging structure after plastic packaging.
The package structure shown includes: a frame base having a lead frame 120 and a conductive base 121; the chip 130 to be packaged is fixed on the conductive substrate 121. The chip 130 to be packaged is a vertical structure device, having a source 131 and a gate 132 on the front side and a drain on the back side. The frame base has a first conductive pad 122 and a second conductive pad 123 on the same side of the chip 130 to be packaged, the source electrode 131 is electrically connected to the bonding area of the second conductive pad 123 through a corresponding electrical connection member 150, and thus electrically connected to a corresponding pin, and the gate electrode 132 is electrically connected to the bonding area of the first conductive pad 122 through a corresponding electrical connection member 150, and thus electrically connected to a corresponding pin. The chip to be packaged 130 is soldered and fixed to the conductive base 121 by the soft solder 140, so that the drain electrode is electrically connected to the soldering area of the conductive base 121 to be electrically connected to the corresponding pin on the other side of the chip to be packaged. After each pole of the chip to be packaged 130 is electrically connected with a corresponding pin, the chip to be packaged 130 and the electrical connection component 150 are sealed and protected by the plastic layer 160.
The gallium nitride HEMT chip is a power device with a transverse structure, a source electrode, a grid electrode and a drain electrode are all positioned on the front surface of the chip, a substrate serving as a base is connected with the source electrode, if the packaging mode shown in fig. 1 is adopted, the substrate is welded and fixed with a conductive base plate 121, the source electrode is electrically connected with the conductive base plate 121 through the substrate and then is electrically connected with a welding area, then the drain electrode and the grid electrode are respectively electrically connected with different welding areas on the other side of the conductive base plate of the lead frame, and because large current exists between the drain electrode and the grid electrode, the mode cannot ensure the withstand voltage distance between the drain electrode and the grid electrode. If the voltage-withstanding distance between the drain electrode and the gate electrode is ensured, the substrate needs to be insulated and then welded and fixed with the conductive substrate 121, so that the drain electrode is electrically connected with the welding area of the conductive substrate of the lead frame, and the source electrode and the gate electrode are respectively electrically connected with different welding areas on one side of the conductive substrate of the lead frame.
In view of this, the embodiment of the invention provides a gallium nitride HEMT packaging structure and a packaging method, which improves the performance of the gallium nitride HEMT packaging structure.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 3 and 4, fig. 3 is a schematic diagram of a package structure of a gallium nitride HEMT according to an embodiment of the present invention, fig. 4 is a top view of the package structure shown in fig. 3 after plastic packaging, fig. 3 is a front top view of the package structure before plastic packaging, and fig. 4 is a side view of the package structure before plastic packaging, and fig. 4 is a front top view of the package structure after plastic packaging and fig. 4 is a back top view of the package structure after plastic packaging.
The package structure includes: a gallium nitride HEMT chip to be packaged 70, the front side of the gallium nitride HEMT chip to be packaged 70 having a Gate (Gate) 72, a Source (Source) 73, and a Drain (Drain) 71; the gate 72 is located between the source 73 and the drain 71; a conductive base 92 having a heat dissipation area for fixing the gallium nitride HEMT chip 70 to be packaged and a base pin area 93; a lead frame 90, wherein a first conductive pad 91, a second conductive pad 94 and a third conductive pad 95 are disposed on the lead frame 90; the conductive base 92 is fixed relative to the lead frame 90 and is insulated therefrom. The first conductive pad 91, the second conductive pad 94, and the third conductive pad 95 are insulated from each other.
Wherein the first conductive pad 91 is located on the side of the to-be-packaged gallium nitride HEMT chip 70 having the drain electrode 71, and the second conductive pad 94 and the third conductive pad 95 are located on the side of the to-be-packaged gallium nitride HEMT chip 70 having the source electrode 73; the back surface of the gallium nitride HEMT chip 70 to be packaged is fixedly and electrically connected with the heat dissipation area; the drain electrode 71 is electrically connected to the first conductive pad 91 through a first electrical connection member 81, the source electrode 73 is electrically connected to the base pad lead area 93 through a second electrical connection member 82, the gate electrode 72 is electrically connected to the third conductive pad 95 through a third electrical connection member 83, and the source electrode 73 is also electrically connected to the second conductive pad 95 through a fourth electrical connection member 84.
Optionally, the back surface of the gallium nitride HEMT chip to be packaged is welded and fixed with the heat dissipation area through soft solder 60. Wherein, the soft solder 60 comprises the following components by mass percent: 95.5% of lead, 2% of tin and 2.5% of silver, so as to ensure good heat dissipation performance. The specific composition and mass percentages of the soft solder 60 are not limited to the description of the embodiments of the present invention and may be set based on requirements.
In the package structure of the embodiment of the present invention, the second conductive pad 94, the third conductive pad 95 and the base pin area 93 are disposed on the same side of the gallium nitride HEMT chip 70 to be packaged and are close to the source 73, the first conductive pad 91 is disposed on the other side of the gallium nitride HEMT chip 70 to be packaged and is close to the drain 91, the drain 71 and the first conductive pad 91 are electrically connected through the first electrical connection member 81, the source 73 and the base pin area 93 are electrically connected through the second electrical connection member 82, the source 73 and the second conductive pad 94 are electrically connected through the fourth electrical connection member 84, the gate 72 and the third conductive pad 95 are electrically connected through the third electrical connection member 83, the difference of larger current between the drain 71 and the source 73 and smaller current between the gate 72 is fully considered, so that the withstand voltage distance between the electrodes of the gallium nitride HEMT chip to be packaged is satisfied, and the electrical performance index of the package structure is satisfied. And the fourth electrical connection component 84 is used for electrically connecting the source 73 and the second conductive pad 94 to form a kelvin source, so that parasitic inductance of the driving circuit can be reduced, and the electrical performance index of the packaging structure can be further improved. Meanwhile, the conductive base 92 includes a heat dissipation area and a base pin area 93, and the gallium nitride HEMT chip 70 to be packaged is fixed and electrically connected to the heat dissipation area, so that the base pin area 93 is electrically connected to the source 73 through the chip substrate, the conductive base 92 has both functions of a heat sink and a base island, and heat dissipation performance of the packaging structure is improved.
In the package structure according to the embodiment of the present invention, each of the first conductive pad 91, the second conductive pad 94, and the third conductive pad 95 includes a bonding area and a pin integrated with the bonding area; the welding area and the pin are provided with bending parts at the joint, so that the welding area is higher than the pin. In this way, the subsequent welding of each electric connection part 80 and the corresponding conductive pad in the wire bonding process is facilitated, the wire bonding length is reduced, and the cost is reduced. Optionally, the first conductive pad 91 is electrically connected to the drain electrode 71 through at least one first electrical connection member 81. Each first conductive pad 91 corresponds to one exposed pin individually and corresponds to one first electrical connection part 81 individually, and the number of the first electrical connection parts 81 is set to be at least 1 according to the current required by the chip.
The first conductive pad 91 includes: a drain bonding region and at least one drain lead integral with the drain bonding region; wherein the drain bonding pad is electrically connected to the drain electrode 71 through the first electrical connection member 81. In the embodiment shown in fig. 3, there are four drain lands, one corresponding to each drain lead, each of which is electrically connected to the drain electrode 71 by the first electrical connection member 81. The number of drain lands may be set based on the requirements and is not limited to the manner shown in fig. 3.
The substrate lead area 93 is electrically connected to the source electrode 73 through at least one of the second electrical connection members 82, and the second conductive pad 94 is electrically connected to the source electrode 73 through one of the fourth electrical connection members 84. Each of the substrate pin areas 93 corresponds to one of the exposed pins individually and corresponds to one of the second electrical connection parts 82 individually, and the number of the second electrical connection parts 82 is set to be at least 1 according to the current required by the chip. The second conductive pad 94 has an insulating gap with the conductive substrate and an insulating gap with the third conductive pad 95, forming a kelvin source. Since the kelvin source current requirement is low, an electrical connection member is generally disposed correspondingly, so that the second conductive pad 94 is electrically connected to the fourth electrical connection member 84 and the source 73, and the third conductive pad 95 is electrically connected to the gate 72 through a third electrical connection member 83.
The base pin area 93 includes: a source pad and at least one source lead integral with the source pad; wherein the source bonding area is electrically connected to the source 73 through the second electrical connection member 82; the second conductive pad 94 includes: a Kelvin source bonding pad KS and a Kelvin source; wherein the Kelvin source bonding pad KS is electrically connected to the source 73 through the fourth electrical connection member 84. In the embodiment shown in fig. 3, there are 2 source bonding areas, one for each source lead, each of which is electrically connected to the source 73 by a fourth electrical connection 84. The number of fourth electrical connection members 84 may be set based on the need and is not limited to the manner shown in fig. 3.
In the manner shown in fig. 3, the third conductive pad 95 is electrically connected to the gate 72 through one of the third electrical connection members 83. The third conductive pad 95 includes: a gate pad and a gate lead; wherein the gate pad is electrically connected to the gate 72 through the third electrical connection member 83.
In the embodiment of the present invention, the gallium nitride HEMT chip 70 to be packaged is of a transverse structure, and the drain electrode 71 and the source electrode 73 are respectively disposed on two opposite long sides of the front surface of the chip and are strip regions. The gate 72 is located on the short side of the front side of the chip. In this way, the drain electrode 71 may be electrically connected to the first conductive pads 90 through the plurality of first electrical connection members 81, and the source electrode 73 may be electrically connected to the base pad lead area 93 through the plurality of second electrical connection members 82, and electrically connected to the second conductive pads 94 through a fourth electrical connection member 84, so that the kelvin source electrode can be conveniently realized while realizing a sufficient withstand voltage distance between the electrodes of the chip after being connected to the conductive pads of the frame.
As shown in fig. 3 and 4, the package structure further includes: and the packaging layer 50 is used for sealing and protecting the gallium nitride HEMT chip 70 to be packaged, and the packaging layer 50 covers the gallium nitride HEMT chip 70 to be packaged and each electric connection part 80. Optionally, the encapsulation layer 50 is an epoxy layer.
In the embodiment shown in fig. 3 and 4, the electrical connection member 80 is described by taking the first electrical connection member 81, the second electrical connection member 82, the third electrical connection member 83, and the fourth electrical connection member 84 as examples. It is easy to understand that in the package structure according to the embodiment of the present invention, the implementation manner of the electrical connection component may be set based on requirements, and is not limited to the manner shown in fig. 3 and fig. 4, and may also be the manner shown in fig. 5.
Referring to fig. 5, fig. 5 is a schematic diagram of a package structure of another gallium nitride HEMT according to an embodiment of the invention, which is different from the manner shown in fig. 3 and 4 in that, in the electrical connection component 100, the first electrical connection component 101 and the second electrical connection 102 are both metal strips, and the third electrical connection component 83 and the fourth electrical connection component 84 are both wires. The metal strip may be an aluminum strip. The metal tape has a smaller impedance with respect to the wire, and the number of wires can be reduced.
Based on the above embodiment, another embodiment of the present invention further provides a method for packaging a gallium nitride HEMT, where the method includes:
step S11: a gallium nitride HEMT chip to be packaged is provided.
The front surface of the gallium nitride HEMT chip to be packaged is provided with a grid electrode, a source electrode and a drain electrode; the gate is located between the source and the drain. The gate, the source and the drain are located on the semiconductor substrate.
In this step, the providing a gallium nitride HEMT chip to be packaged includes: firstly, providing a wafer; and then, after thinning the back surface of the wafer, dividing the wafer into a plurality of gallium nitride HEMT chips to be packaged through a dicing process.
The wafer may be thinned by 20-300 μm, and the wafer may be thinned by etching or mechanical masking or a combination of both. Dicing may be performed by laser grooving to the semiconductor substrate.
Step S12: and fixing the gallium nitride HEMT chip to be packaged on a frame base plate.
The gallium nitride HEMT chip to be packaged can be fixed on the frame base plate by soft solder. The frame base is provided with a conductive base and a lead frame which are relatively fixed; the conductive base plate is provided with a heat dissipation area and a base plate pin area for fixing the gallium nitride HEMT chip to be packaged; the back surface of the packaged gallium nitride HEMT chip is fixedly and electrically connected with the heat dissipation area; the lead frame is provided with a first conductive pad, a second conductive pad and a third conductive pad; the conductive base plate is fixed relative to the lead frame; the first conductive pad is positioned on one side of the to-be-packaged gallium nitride HEMT chip with the drain electrode, and the base plate pin area, the second conductive pad and the third conductive pad are positioned on one side of the to-be-packaged gallium nitride HEMT chip with the source electrode;
step S13: and electrically interconnecting the gallium nitride HEMT chip to be packaged with each conductive bonding pad and the base plate pin area through a wire bonding process.
The wire bonding process is the same as the conventional PDFN process. The drain electrode is electrically connected with the first conductive bonding pad through a first electrical connection part, the source electrode is electrically connected with the base plate pin area through a second electrical connection part, the grid electrode is electrically connected with the third conductive bonding pad through a third electrical connection part, and the source electrode is also electrically connected with the second bonding pad through a fourth electrical connection part.
Optionally, the packaging method further includes: and the packaging layer for sealing and protecting the gallium nitride HEMT chip to be packaged is formed through a plastic packaging process, so that the packaging layer covers the gallium nitride HEMT chip to be packaged and all the electric connection parts. The plastic packaging process is the same as the traditional plastic packaging process.
And the final product packaging is finished through subsequent process flows of curing, gum grinding, tin melting, printing, product separation, inspection, packaging and the like, which are the same as the traditional PDFN process.
The packaging method provided by the embodiment of the invention can be used for preparing the packaging structure provided by the embodiment, is simple in process and low in cost, and can be used for preparing the packaging structure with good heat dissipation performance and high electrical performance index.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the packaging method disclosed by the embodiment, the description is simpler because the packaging method corresponds to the packaging structure disclosed by the embodiment, and the relevant parts only need to be described with reference to the corresponding parts of the packaging structure.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or device comprising the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A package structure of a gallium nitride HEMT, the package structure comprising:
The gallium nitride HEMT chip to be packaged is characterized in that the front surface of the gallium nitride HEMT chip to be packaged is provided with a grid electrode, a source electrode and a drain electrode; the grid electrode is positioned between the source electrode and the drain electrode;
the conductive base plate is provided with a heat dissipation area and a base plate pin area for fixing the gallium nitride HEMT chip to be packaged;
The lead frame is provided with a first conductive bonding pad, a second conductive bonding pad and a third conductive bonding pad; the conductive base plate is fixed relative to the lead frame;
The first conductive bonding pad is positioned on one side of the to-be-packaged gallium nitride HEMT chip with the drain electrode, and the second conductive bonding pad and the third conductive bonding pad are positioned on one side of the to-be-packaged gallium nitride HEMT chip with the source electrode; the back surface of the gallium nitride HEMT chip to be packaged is fixedly and electrically connected with the heat dissipation area; the drain electrode is electrically connected with the first conductive bonding pad through a first electrical connection part, the source electrode is electrically connected with the base plate pin area through a second electrical connection part, the grid electrode is electrically connected with the third conductive bonding pad through a third electrical connection part, and the source electrode is also electrically connected with the second conductive bonding pad through a fourth electrical connection part;
The base plate pin area, the first conductive bonding pad, the second conductive bonding pad and the third conductive bonding pad all comprise a welding area and pins integrated with the welding area; the welding areas of the first conductive bonding pad, the second conductive bonding pad and the third conductive bonding pad are provided with bending parts at the joints of the pins, so that the welding areas are higher than the pins;
the first conductive pad is electrically connected with the drain electrode through at least one first electrical connection component; the first conductive pad includes: a drain bonding region and at least one drain lead integral with the drain bonding region; wherein the drain electrode bonding area is electrically connected with the drain electrode through the first electrical connection component;
the base plate pin area is electrically connected with the source electrode through at least one second electric connecting component, and the second conductive bonding pad is electrically connected with the source electrode through one fourth electric connecting component; the base pin area includes: a source pad and at least one source lead integral with the source pad; wherein the source electrode welding area is electrically connected with the source electrode through the second electric connecting component; the second conductive pad includes: a Kelvin source bonding pad and a Kelvin source; wherein the Kelvin source bonding pad is electrically connected to the source through the fourth electrical connection feature.
2. The package structure of claim 1, wherein the third conductive pad is electrically connected to the gate through one of the third electrical connection members.
3. The package structure of claim 2, wherein the third conductive pad comprises: a gate pad and a gate lead;
Wherein the gate pad is electrically connected to the gate electrode through the third electrical connection member.
4. The package structure of claim 1, wherein the back surface of the gallium nitride HEMT chip to be packaged is fixed to the heat dissipation area by soft solder.
5. The package structure of any one of claims 1-4, further comprising: and the packaging layer is used for carrying out sealing protection on the gallium nitride HEMT chip to be packaged, and the packaging layer covers the gallium nitride HEMT chip to be packaged and all the electric connection parts.
6. The package structure of claim 5, wherein the encapsulation layer is an epoxy layer.
7. A packaging method of the packaging structure of the gallium nitride HEMT according to any one of claims 1 to 6, characterized in that the packaging method comprises:
providing a gallium nitride HEMT chip to be packaged; the front surface of the gallium nitride HEMT to be packaged is provided with a grid electrode, a source electrode and a drain electrode; the grid electrode is positioned between the source electrode and the drain electrode;
Fixing the gallium nitride HEMT chip to be packaged on a frame base plate, wherein the frame base plate is provided with a conductive base plate and a lead frame which are relatively fixed; the conductive base plate is provided with a heat dissipation area and a base plate pin area for fixing the gallium nitride HEMT chip to be packaged; the back surface of the gallium nitride HEMT chip to be packaged is fixedly and electrically connected with the heat dissipation area; the lead frame is provided with a first conductive pad, a second conductive pad and a third conductive pad; the conductive base plate is fixed relative to the lead frame; the first conductive bonding pad is positioned at one side of the to-be-packaged gallium nitride HEMT chip with the drain electrode, and the base plate pin area, the second conductive bonding pad and the third conductive bonding pad are positioned at one side of the to-be-packaged gallium nitride HEMT chip with the source electrode;
electrically interconnecting the gallium nitride HEMT chip to be packaged with each conductive bonding pad and the base plate pin area through a wire bonding process; the drain electrode is electrically connected with the first conductive bonding pad through a first electrical connection part, the source electrode is electrically connected with the base plate pin area through a second electrical connection part, the grid electrode is electrically connected with the third conductive bonding pad through a third electrical connection part, and the source electrode is also electrically connected with the second conductive bonding pad through a fourth electrical connection part.
8. The method of packaging according to claim 7, wherein providing a gallium nitride HEMT chip to be packaged comprises:
Providing a wafer;
And after thinning the back surface of the wafer, dividing the wafer into a plurality of gallium nitride HEMT chips to be packaged through a scribing process.
9. The packaging method of claim 7, further comprising:
And the packaging layer for sealing and protecting the gallium nitride HEMT chip to be packaged is formed through a plastic packaging process, so that the packaging layer covers the gallium nitride HEMT chip to be packaged and all the electric connection parts.
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