CN112687648B - Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit - Google Patents
Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit Download PDFInfo
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- CN112687648B CN112687648B CN202011516205.7A CN202011516205A CN112687648B CN 112687648 B CN112687648 B CN 112687648B CN 202011516205 A CN202011516205 A CN 202011516205A CN 112687648 B CN112687648 B CN 112687648B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000001746 injection moulding Methods 0.000 title claims abstract description 21
- 239000004033 plastic Substances 0.000 claims abstract description 16
- 229920003023 plastic Polymers 0.000 claims abstract description 16
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 238000012795 verification Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Wire Bonding (AREA)
Abstract
A bonding method for preventing injection molding deformation of long-span bonding wires of an integrated circuit, the method comprising the steps of: penetrating the set golden wire from a hole at the top of the riving knife, and penetrating out from a port at the bottom of the riving knife; bonding the bonding wire at a first bonding point A by driving the port of the chopper; raising the port of the chopper to a point B at a set height according to a set inclination angle; translating the riving knife port backwards to a set distance C point; vertically lifting the riving knife port to a set height D point; moving the front upper part of the riving knife port to the E point according to the set height and distance; and moving the riving knife port forwards and downwards to a second bonding point F to finish bonding, and finishing wire bonding between the first bonding point A and the second bonding point F. The problem of in current plastics encapsulation technique, under the condition that the pin is many, the interval is little, the gold wire is thin, long span bonding lead wire arc injection molding warp is solved. Can be popularized to similar products of long-span wire bonds according to the wire diameter of the gold wire.
Description
Technical Field
The invention relates to the field of semiconductor chip packaging, in particular to the field of plastic packaging of semiconductor chips, and particularly relates to the technical field of wire bonding of plastic packaging chips.
Background
In the semiconductor industry, in order to achieve electrical connection between a chip circuit and a lead of a package, it is necessary to bond electrode output points (chip bonding points) on a chip to corresponding lead bonding points of the package by using bonding wires (typically gold wires, silicon aluminum wires or copper wires). In particular, in the plastic packaging of semiconductor integrated circuits, the requirements of packaging reliability, packaging cost, mass scale and automation production are comprehensively considered, and a thinner gold wire is generally used as a bonding wire to connect leads between electrode bonding points. When wires are bonded from one bond point to another, the wire must be arched to a certain height and shape (hereinafter referred to as "wire arch") in order to prevent contact shorts with the electrical conductors between the two points. The wire arc strength is determined by the type of bonding wire, the wire diameter and the bonding span (the distance between bonding points), and the smaller the wire diameter or the larger the span, the lower the wire arc strength is, the more easily deformed, and the phenomena such as collapse and deflection are particularly caused when the wire arc strength is subjected to external forces such as landing, vibration, collision and plastic package, so that the wire arc strength and the wire arc strength have the potential for causing undesirable hidden dangers such as collision and short circuit with other leads or conductors. In particular, the QFP plastic packaging problem to be solved by the invention relates to the problems of a large number of pins, small spacing and thin gold wires (the wire diameter is phi 15 mu m to phi 30 mu m), and during plastic packaging, the problems of wire arc deformation, collapse, skew and the like of a lead are easily caused under the influence of external forces such as plastic resin flow, injection molding pressure and the like, so that the problems of collision, short circuit and the like with other leads or conductors are caused. For example, LQFP100 plastic package, when the bonding distance is larger than 3mm, the bonding wires are seen clearly through X-ray inspection equipment after injection molding, and after the bonding wires are inclined in an offset manner, short circuits are touched, and an X-ray inspection schematic diagram among the chip 1, the orthographic projection leads 2, the orthographic projection arch deformation leads 3 and the orthographic projection lead deformation collision line 4 is shown in FIG. 1.
In view of this, the present invention has been made.
Disclosure of Invention
The purpose of the invention is that: the problem of in current plastics encapsulation technique, under the circumstances that the pin is many, the interval is little, the gold wire is thin, how to prevent long span bonding wire arc injection molding deformation is solved.
When the lead is bonded from the first bonding point to the second bonding point, the bonding lead is continuously sent out along the port of the bonding chopper, and the forming process of the bonding lead wire arc is formed by the port of the bonding chopper according to the following running track. As shown in fig. 2 to 5:
A. B, C, D, E, F respectively represent path points of the riving knife ports in sequence, wherein the heights of the riving knife ports from A to D determine the heights of the wire arcs, and the larger the value is, the larger the wire arc heights are; the greater the value of the angle between the wire arc and the bonding pad of the first bonding point 5 (i.e. the smaller the lead start angle 8 in the prior art), the greater the value of the angle between the wire arc and the bonding pad is, the greater the wire arc middle span distance DE determines the structure of the wire arc middle section. And the parameters are mutually restricted, the span is too large, the bonding wire can directly collapse in a welding area, and the bonding wire is directly broken when the span is too small.
Wherein:
line segment AB: indicating the elevation of the riving knife port from the first bond point 5 (point a) to point B;
Line segment BC: representing the distance the riving knife port moves back from point B to point C;
Line segment CD: the height of the riving knife port from the C point to the D point is represented;
line segment DE: representing the distance that the riving knife port moves forward from the point D to the point E, namely the mid-span distance of the wire loop;
Line segment EF: representing the bonding distance of the riving knife port from the point E to the second bonding point 6 (point F);
Angle CDE: indicating the angle of deflection of the riving knife to the second welding point
Line arc height (AE): distance from highest point of bonding wire arc to pin horizontal plane
The general bonding process is shown in fig. 2: after bonding at the first bonding point 5 (point a), the riving knife vertically rises to point B, then moves back to point C, then vertically rises to point D, moves forward to point E, and finally moves forward and downward to the second bonding point 6 (point F) to finish bonding the wire bonding between the first bonding point 5 (point a) and the second bonding point 6 (point F).
The wire loop shape thus obtained is shown in fig. 3: the lead start angle 8 is greater than 45 °, the length of the arch intermediate section 9 is less than half the AF distance, the shape of the arch intermediate section 9 is parabolic, and the arch height 10 is relatively high. Is a standard wire loop shape specified by method 2011.1 in standard GJB 548. When the wire loop is a long span wire loop, the technical problem to be solved by the invention occurs.
When the wire arc is a long-span wire arc, the stress mode of the bonding wire is analyzed, and the stress is directly proportional to the viscosity of the plastic packaging material, the injection molding speed and the included angle between the wire and the stress. When the viscosity of the plastic packaging material and the injection molding speed are in a reasonable interval, the structural strength of the middle section of the bonding wire in the long span is improved by changing the shape of the wire arc, and the included angle between the impulse of the plastic packaging material and the wire is changed, so that the impulse of the bonding wire in the injection molding process is reduced, the offset short circuit of the middle section of the wire is avoided, and the quality reliability of the product is improved.
To this end, the general idea of the invention is: the improvement is made from the following three aspects: (1) lowering the arc height 10; (2) Changing the arc structure in the middle of the wire arc into a shape 12 which is approximately horizontal; (3) reducing the wire bow at an angle 11 to the bond pad. The schematic diagram is shown in fig. 5.
To this end, the present invention provides a bonding method for preventing injection molding deformation of long span bonding wires of an integrated circuit, as shown in fig. 4, comprising the steps of:
(1) Penetrating the set golden wire from a hole at the top of the riving knife, and penetrating out from a port at the bottom of the riving knife;
(2) Bonding the bonding wire at a first bonding point A by driving the port of the chopper;
(3) Rising a riving knife port from the point A to a point B with the height of 50 mu m-70 mu m according to an inclined angle of more than 90 DEG of ABC;
(4) Translating the riving knife port backwards from the point B to a set distance point C;
(5) Vertically lifting the chopper port from a point C to a point D with a set height according to the angle BCD equal to 90 ℃;
(6) Moving the riving knife port to the E point from the D point according to the height of 100-120 mu m and the set distance according to the angle CDE of more than 90 degrees;
(7) F, moving the chopper port from the point D to the point F of the second bonding point according to the angle DEF to finish F bonding, wherein the included angle between the bonding wire after F bonding and the impact force of the plastic package material born by the bonding wire after F bonding is 10-30 degrees;
The bonding distance of the long-span bonding is 3 mm-5 mm.
According to the bonding method, the bonding wire arc shape shown in fig. 5 can be obtained.
Compared with the original wire-arc shape, the novel wire-arc shape has the advantages that the height of a fold line is reduced, the inclination angle is reduced, the wire-arc span distance exceeds the proportion of more than half of the bonding distance, and the obtained wire-arc shape structure is characterized in that the wire-arc height is low, and the middle section is straight. After injection molding, X-ray machine inspection can clearly see the decrease of swing amplitude of bonding wires, and after verification of multiple batches, the new wire arc knots are all subjected to injection molding, and the situation that the wires are free of offset short circuit occurs.
The bonding method realizes the main influencing factors of the wire loop formation of the long bonding distance, provides the design thought of the long-span bonding wire loop structure, and provides a group of parameters for designing the wire loop. Because the wire-bonding machine wire-arc forming process is basically consistent, only equipment of different manufacturers has different parameter names and windows, the bonding method can be popularized to similar long-span wire-bonding products according to the wire diameter of the gold wire.
Drawings
Fig. 1 is a prior art bond wire offset shorting schematic.
FIG. 2 is a schematic diagram of a prior art bonded riving knife archwire path.
Fig. 3 is a prior art bonding wire arch-like schematic view.
FIG. 4 is a schematic view of the bonded riving knife archwire path of the present invention.
Fig. 5 is a schematic view of the bond wire arch shape of the present invention.
In the figure: 1 is a chip, 2 is a front projection lead, 3 is a front projection arch deformation lead, 4 is a front projection lead deformation joint, 5 is a first bonding point, 6 is a second bonding point, 7 is a prior art arch lead, 8 is a prior art lead starting angle, 9 is a prior art arch middle section, 10 is a prior art arch height, 11 is a lead starting angle of the invention, and 12 is an arch lead of the invention
Detailed Description
Taking LQFP100 type plastic packaging products as an example, adopting gold wires with phi 20 mu m, and bonding distance being between 3mm and 5 mm. The adopted bonding equipment is iHawk Xtreme GoCu of ASM, the conventional bonding wire arc height is generally set at 150 mu m-200 mu m, the inclination angle is generally set at 90 degrees, and after the bonding distance (AF) is greater than 3mm, the problem that the bonding wire is inevitably deviated at the middle part is solved by using the original wire arc parameter shape, and the conventional wire arc path schematic diagrams are shown in fig. 2 and 3.
According to the bonding method, a novel bonding wire arc structure is designed for avoiding the offset of the bonding wire in the injection molding process. As shown in table 1:
TABLE 1 Long distance bonding wire arc parameter test factor level table
| Horizontal level | Fold line height (AB)/[ mu ] m | Angle of inclination (++CDE)/° | Percentage/%of the mid-span of the wire arc (DE) to the original span | Line arc height (AE)/[ mu ] m |
| 1 | 50 | 90 | 75% | 100 |
| 2 | 60 | 120 | 80% | 110 |
| 3 | 70 | 150 | 85% | 120 |
Wherein:
1. fold line height (AB): the riving knife is raised a first point distance from the first bond point.
2. Tilt angle (++cde): the angle of deflection of the riving knife to the second weld point.
3. Line arc height (AE): the distance of the highest point of the bond wire arc to the pin level.
4. Wire arc mid-span Distance (DE): the distance the riving knife moves horizontally at the highest point.
Through selecting 50 mu m from the different wire arc shapes of new design, the broken line height (AB), the inclination angle (& gtCDE) is selected to be 150 degrees, the percentage of the wire arc middle span (DE) to the original span is selected to be 85%, and when the wire arc height is selected to be 100 mu m, the middle part of the bonding wire is smoother, and the included angle between the bonding wire and the impact force of the plastic package material born by the bonding wire is reduced from the original 45-70 degrees to the current 10-30 degrees.
Compared with the original wire arc, the novel wire arc shape has the advantages that the broken line height is reduced, the inclination angle is adjusted to the equipment limit, the wire arc span distance exceeds half proportion of the bonding distance, the wire arc height adopts the equipment minimum limit value, the actual wire arc shape structure is characterized in that the wire arc height is low, the middle section is flat, the X-ray machine inspection after injection molding can clearly see the swing amplitude reduction of the bonding wire, and after multiple batches of verification, the condition that the novel wire arc is in no-offset short circuit after injection molding can be realized.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments disclosed herein. It will be understood by those skilled in the art that various changes in detail may be effected therein without departing from the scope of the invention as defined by the claims appended hereto.
Claims (6)
1. A bonding method for preventing injection molding deformation of long-span bonding wires of an integrated circuit, the method comprising the steps of:
(1) Penetrating the set golden wire from a hole at the top of the riving knife, and penetrating out from a port at the bottom of the riving knife;
(2) Bonding the bonding wire at a first bonding point A by driving the port of the chopper;
(3) Rising a riving knife port from the point A to a point B with the height of 50 mu m-70 mu m according to an inclined angle of more than 90 DEG of ABC;
(4) Translating the riving knife port backwards from the point B to a set distance point C;
(5) Vertically lifting the chopper port from a point C to a point D with a set height according to the angle BCD equal to 90 ℃;
(6) Moving the riving knife port to the E point from the D point according to the height of 100-120 mu m and the set distance according to the angle CDE of more than 90 degrees;
(7) F, moving the chopper port from the point D to the point F of the second bonding point according to the angle DEF to finish F bonding, wherein the included angle between the bonding wire after F bonding and the impact force of the plastic package material born by the bonding wire after F bonding is 10-30 degrees;
The bonding distance of the long-span bonding is 3 mm-5 mm.
2. A bonding method for preventing injection molding deformation of long span bond wires of an integrated circuit as recited in claim 1, wherein the angle CDE is 150 °.
3. The bonding method for preventing injection molding deformation of long-span bonding wires of an integrated circuit according to claim 1, wherein the wire diameter of the bonding wires is phi 15 [ mu ] m to phi 30 [ mu ] m.
4. A bonding method for preventing injection molding deformation of long span bond wires of an integrated circuit as recited in claim 3, wherein the bond wires have a wire diameter of phi 20 μm.
5. The bonding method for preventing injection molding deformation of long-span bonding wires of an integrated circuit according to claim 1, wherein the height of the point B is 50 mu m, and the wire arc height is 100 mu m.
6. The bonding method of long span bond wires of an integrated circuit of claim 1 wherein the bonding apparatus employed is iHawk Xtreme GoCu from ASM.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011516205.7A CN112687648B (en) | 2020-12-21 | 2020-12-21 | Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011516205.7A CN112687648B (en) | 2020-12-21 | 2020-12-21 | Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit |
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| CN112687648A CN112687648A (en) | 2021-04-20 |
| CN112687648B true CN112687648B (en) | 2024-06-11 |
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| CN116564837B (en) * | 2023-07-07 | 2023-09-26 | 赛晶亚太半导体科技(北京)有限公司 | Bonding method and bonding structure of aluminum-clad copper wire based on nickel-plated bonding pad |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854094A (en) * | 2019-11-27 | 2020-02-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low-arc bonding method for bonding wire of large-size chip |
| CN111668182A (en) * | 2020-07-03 | 2020-09-15 | 浙江佳博科技股份有限公司 | A bonding wire and a semiconductor bonding process based on the bonding wire |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7078792B2 (en) * | 2004-04-30 | 2006-07-18 | Atmel Corporation | Universal interconnect die |
| JP4361593B1 (en) * | 2008-10-21 | 2009-11-11 | 株式会社新川 | Wire bonding method |
| EP3166142B1 (en) * | 2015-11-06 | 2021-07-21 | Nxp B.V. | Bond wire connection and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854094A (en) * | 2019-11-27 | 2020-02-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low-arc bonding method for bonding wire of large-size chip |
| CN111668182A (en) * | 2020-07-03 | 2020-09-15 | 浙江佳博科技股份有限公司 | A bonding wire and a semiconductor bonding process based on the bonding wire |
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