CN112676780B - Plasma electrochemical jet composite processing method and device - Google Patents
Plasma electrochemical jet composite processing method and device Download PDFInfo
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Abstract
本发明涉及复合加工技术领域，公开了一种等离子体电化学射流复合加工方法及装置，将电解液通过喷射装置形成射流喷射在工件上，通过施加合适电压在工件表面产生等离子体，从而击穿工件表面由于电化学射流产生的氧化膜，实现电解等离子体加工和电化学射流加工复合，实现化学惰性材料的加工。等离子体电化学射流复合加工装置机架上设置有工作台，工作台上设置有夹具，喷射装置包括喷嘴，喷嘴朝向夹具，用于向工件喷射电解液；只需将待加工工件夹持于夹具上，将喷嘴连接于电源负极、工件连接于电源正极，通过喷嘴将电解液喷射于工件表面，即可实现电解等离子体加工和电化学射流加工的复合加工方式，结构简单，可以有效降低加工成本。
The present invention relates to the technical field of composite processing, and discloses a plasma electrochemical jet composite processing method and device, wherein an electrolyte is formed into a jet through a spray device and sprayed on a workpiece, and plasma is generated on the workpiece surface by applying a suitable voltage, thereby breaking through the oxide film generated on the workpiece surface due to the electrochemical jet, realizing the combination of electrolytic plasma processing and electrochemical jet processing, and realizing the processing of chemically inert materials. A workbench is arranged on the frame of the plasma electrochemical jet composite processing device, and a fixture is arranged on the workbench. The spray device includes a nozzle, and the nozzle faces the fixture, and is used to spray the electrolyte to the workpiece; it only needs to clamp the workpiece to be processed on the fixture, connect the nozzle to the negative pole of the power supply, and connect the workpiece to the positive pole of the power supply, and spray the electrolyte on the workpiece surface through the nozzle, so as to realize the composite processing mode of electrolytic plasma processing and electrochemical jet processing, which has a simple structure and can effectively reduce the processing cost.
Description
Technical Field
The invention relates to the technical field of composite processing, in particular to a plasma electrochemical jet composite processing method and device.
Background
With the continuous innovation of semiconductor technology, the third-generation semiconductor materials including silicon carbide (SiC) in recent years have great development potential in the aspect of manufacturing high-frequency, high-temperature and radiation-resistant high-power semiconductor devices due to the advantages of large forbidden bandwidth, high breakdown electric field, high heat conductivity and the like. The conventional processing method mainly comprises wet etching, dry etching, electric spark, laser, chemical or electrochemical processing and the like. The chemical inert metal plays an important role in the high technical fields of aerospace, energy sources, medical treatment and the like by virtue of the material performances such as high heat stability, corrosion resistance and the like, for example, niobium (Nb) and the alloy thereof can be applied to a superconducting magnet, the high-temperature alloy can be applied to a rocket propeller nozzle, a gas turbine engine and heat-resistant and fire-resistant equipment, and titanium (Ti) can be applied to manufacturing medical equipment, so that the material is a good biocompatible material. However, chemically inert metals such as niobium and titanium, and semiconductor materials such as silicon and silicon carbide have high hardness, high brittleness and high chemical stability, and are difficult to process by conventional methods.
Specifically, the pattern cannot be precisely controlled by wet etching, and the etchant is dangerous strong acid and alkali such as hydrofluoric acid or potassium hydroxide, the dry etching has the risk of wafer damage, the equipment is complex and high in cost, the method is not suitable for mass production, a heat affected zone, a recast layer or microcracks can be generated on the surface of a material by electric spark and laser processing, an oxide film insulating layer can be generated on the surface of a chemically inert material after the material such as niobium or silicon carbide is combined with oxygen to prevent electrochemical reaction, and an acid or alkaline electrolyte is generally adopted to remove an oxide film, so that the method has high risk and is not friendly to the environment, and the application of conventional electrochemical jet flow in the processing of the chemically inert material is limited.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a plasma electrochemical jet flow composite processing method which can realize the surface selective processing of chemically inert materials and provides a plasma electrochemical jet flow composite processing device.
According to the plasma electrochemical jet flow composite processing method of the embodiment of the first aspect of the invention, an electrochemical jet flow mode is adopted by a jet device, electrolyte is sprayed to a workpiece to be processed through a nozzle of the jet device, an electric field is applied between the nozzle and the workpiece, and at a set voltage, plasma is generated on the surface of the workpiece to break down an oxide film generated by the electrochemical jet flow so as to remove the material on the surface of the workpiece.
The plasma electrochemical jet flow composite processing method has the advantages that the electrolyte is sprayed on the workpiece through the jet flow formed by the spraying device, plasma is generated on the surface of the workpiece through applying proper voltage, so that an oxide film on the surface of the workpiece due to the electrochemical jet flow is broken down, the composite of electrolytic plasma processing and electrochemical jet flow processing is realized, and the processing of chemical inert materials is realized.
According to some embodiments of the invention, the electric field is applied between the nozzle and the workpiece by connecting the workpiece to a positive power supply and the nozzle to a negative power supply.
According to some embodiments of the present invention, the power supply is set to a constant voltage output mode, and the current waveform output by the power supply is a direct current waveform or a pulse waveform, and the voltage range is 100V to 300V.
According to some embodiments of the invention, the initial gap between the nozzle and the workpiece is 0.2mm to 0.8mm.
According to some embodiments of the invention, the electrolyte is a NaNO 3 aqueous solution with a mass fraction ranging from 0.5% to 20%, or is a neutral salt solution such as a NaCl aqueous solution.
According to some embodiments of the invention, the trajectory of the nozzle relative to the surface of the workpiece is controlled to process a desired location.
According to a second aspect of the present invention, a plasma electrochemical jet composite processing apparatus includes:
The machine comprises a rack, wherein a workbench is arranged on the rack, and a clamp for clamping a workpiece to be processed is arranged on the workbench;
a spraying device including a nozzle facing the jig for spraying an electrolyte toward the workpiece;
and the positive electrode of the power supply device is connected with the workpiece, and the negative electrode of the power supply device is connected with the nozzle.
The plasma electrochemical jet flow composite processing device has the advantages that the workpiece to be processed is clamped on the clamp, the nozzle is connected to the power negative electrode, the workpiece is connected to the power negative electrode, and the electrolyte is sprayed on the surface of the workpiece through the nozzle, so that the composite processing mode of electrolytic plasma processing and electrochemical jet flow processing can be realized. The plasma electrochemical jet flow composite processing device provided by the embodiment of the invention can be applied to the plasma electrochemical jet flow composite processing method of the embodiment, realizes a composite processing mode of electrolytic plasma processing and electrochemical jet flow processing, has a simple structure, and can effectively reduce processing cost.
According to some embodiments of the invention, the plasma electrochemical jet composite processing apparatus further comprises a driving device connected to the frame for driving the table and the nozzle to move relatively.
According to some embodiments of the invention, the workbench is further provided with an electrolytic tank, the clamp is arranged in the electrolytic tank, and the electrolytic tank is used for collecting and discharging the electrolyte sprayed from the nozzle.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a plasma electrochemical jet composite processing method according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a method for plasma electrochemical jet composite processing according to an embodiment of the present invention;
FIG. 3 is a schematic block diagram of a plasma electrochemical jet composite processing device according to an embodiment of the present invention;
FIG. 4 is a schematic perspective view of a part of a plasma electrochemical jet composite processing device according to an embodiment of the invention;
FIG. 5 is a schematic illustration of the formation of an oxide film on the surface of a chemically inert semiconductor silicon carbide;
FIG. 6 is a schematic illustration of the material removal of FIG. 5;
FIG. 7 is a schematic diagram showing the process of changing from an electrochemical anodic oxidation zone to a plasma discharge zone under different process parameters;
FIG. 8 is an example of a chemically inert material semiconductor silicon surface having a micro-groove pattern machined therein;
FIG. 9 is an example of a micro-groove pattern machined into a niobium metal surface;
FIG. 10 is another example of a semiconductor silicon surface having a micro-trench pattern machined therein;
fig. 11 is another example of a micro-groove pattern machined into the niobium surface.
Reference numerals:
Nozzle 100, electrolyte tank 110, liquid feed line 120, liquid return line 130, liquid feed device 140, filter 150, pressure gauge 160, workpiece 200, discharge 210, oxide film breakdown 220, oxide film 230, bubble 240, power supply device 300, power supply anode 310, power supply cathode 320, oscilloscope 330, electrolyte 400, initial gap 500, workbench 600, clamp 610, electrolytic bath 620, first drive 710, second drive 720, third drive 730, curves L1, L2, L3, anodized region S1, discharge region S2.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In the description of the present invention, the descriptions of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The chemical inert metal plays an important role in the high technical fields of aerospace, energy sources, medical treatment and the like by virtue of the material performances such as high heat stability, corrosion resistance and the like, for example, niobium (Nb) and the alloy thereof can be applied to a superconducting magnet, the high-temperature alloy can be applied to a rocket propeller nozzle, a gas turbine engine and heat-resistant and fire-resistant equipment, and titanium (Ti) can be applied to manufacturing medical equipment, so that the material is a good biocompatible material. With the continuous innovation of semiconductor technology, the third-generation semiconductor materials including silicon carbide (SiC) in recent years have great development potential in the aspect of manufacturing high-frequency, high-temperature and radiation-resistant high-power semiconductor devices due to the advantages of large forbidden bandwidth, high breakdown electric field, high heat conductivity and the like. However, chemically inert metals such as niobium and titanium, and semiconductor materials such as silicon and silicon carbide have high hardness, high brittleness and high chemical stability, and are difficult to process by conventional methods.
Etching in semiconductor technology is a technology of selectively etching or stripping a material substrate or a surface-covering film according to mask pattern design requirements, and is classified into wet etching and dry etching. The dry etching is to remove the material by using the physical bombardment and chemical action of plasma on the surface of the material, so that anisotropic etching can be realized, but the wafer is damaged due to ion bombardment, and the equipment is complex, high in cost and not suitable for mass production. Compared with the dry etching, the wet etching has lower cost, because the silicon carbide has excellent chemical stability, the conventional acid or alkali solution can hardly corrode the silicon carbide, so that an electric field or ultraviolet light is generally introduced to assist the wet etching, however, the transverse etching rate of the wet etching is close to the longitudinal etching rate, so that the silicon carbide is isotropically etched, the pattern transfer precision of the wet etching is lower, the etching rate of the silicon carbide wet etching is lower than tens to hundreds of nanometers per minute, and in addition, the etchant of the silicon carbide wet etching is generally high-concentration hydrofluoric acid or molten potassium hydroxide, so that the human body and the environment are greatly harmed.
Other machining methods such as spark, laser, chemical or electrochemical machining methods are widely used, each of which has advantages and disadvantages in that spark and laser machining use thermal energy to melt and evaporate material, but the surface of the material may produce heat affected zones, recast or microcracks. Electrochemical machining utilizes electrochemical anodic dissolution reaction of workpiece materials in electrolyte to realize localized removal of materials, tool loss is avoided, a heat affected zone and residual stress are avoided after machining, and surface damage of the workpiece is avoided. During processing, electrolyte is sprayed onto the surface of a workpiece to be processed at a high speed, and operations such as electrolytic punching, milling, cutting and the like can be performed, so that the method has the characteristics of simplicity, flexibility, controllable processing area and good processing flexibility. However, when the inert materials such as niobium or silicon carbide are combined with oxygen, an oxide film insulating layer is formed on the surface of the material to prevent electrochemical reaction, so that the oxide film needs to be removed, and the oxide film is usually realized by adopting an acidic or alkaline electrolyte, so that the method has high risk and is not friendly to the environment, and the application of conventional electrochemical processing in the processing of chemically inert materials is limited.
Compared with the conventional processing method, the plasma electrochemical jet flow composite processing method provided by the invention adopts a composite processing mode of electrolytic plasma processing and electrochemical jet flow processing. Electrolytic plasma technology, which may also be referred to as plasma electrolytic oxidation, is a composite technology combining electrolysis and plasma discharge, and has been rapidly developed in recent years because it can significantly improve surface properties, achieve a surface coating with high environmental compatibility. In the electrolytic plasma processing process, an electric field is applied between a tool electrode and a workpiece in an electrolyte environment, so that electrolytic gas on the surface of the electrode is separated out and electrolyte solution is evaporated under the action of strong ohmic heat under the action of high pressure, and the surface of the electrode is discharged to generate plasma, so that a series of chemical, electric and thermal reactions are generated, and oxidation, coating, coloring and deposition and material removal such as surface polishing and cleaning treatment can be realized on the surface of a workpiece material. According to the embodiment of the invention, the electrolytic plasma processing and the electrochemical jet processing are combined, the electrolyte is sprayed on the workpiece through the jet formed by the spraying device, and the plasma is generated on the surface of the workpiece through applying proper voltage, so that an oxide film on the surface of the workpiece due to the electrochemical jet is broken down, and the processing of the chemically inert material is realized.
Fig. 1 is a schematic diagram of a plasma electrochemical jet composite processing method according to an embodiment of the present invention, fig. 2 is a schematic diagram of the plasma electrochemical jet composite processing method according to an embodiment of the present invention, NO 3 -、Na+、H2O、H2 in the drawing indicates ions and molecules in an electrolyte, and an arrow in the drawing indicates a flow direction of the electrolyte, and referring to fig. 1 and 2, in the plasma electrochemical jet composite processing method according to the embodiment, an injection device adopts an electrochemical jet mode to inject an electrolyte 400 from a nozzle 100 of the injection device to a workpiece 200 to be processed, and an electric field is applied between the nozzle 100 and the workpiece 200, at this time, the intensity of the electric field acting on an oxide film 230 (shown by a bold line in the drawing) is very high, an electric discharge 210 occurs on an electrode surface of the workpiece 200 to generate plasma, and at a set voltage, the plasma generated on the surface of the workpiece 200 can break down the oxide film 230 generated by the electrochemical jet, that is, an oxide film breakdown 220 is to remove a surface material of the workpiece 200, and selective processing of a chemically inert material is realized.
Taking silicon carbide as an example, compared with an etching technology, the plasma electrochemical jet composite processing method provided by the invention has the advantages of high efficiency, low cost, environmental protection and no pollution, compared with laser and electric spark processing, the plasma electrochemical jet composite processing method provided by the invention does not generate a heat affected zone to reduce the surface quality and has no tool loss, compared with an electrochemical jet processing method, by taking niobium as an example, the plasma electrochemical jet composite processing method provided by the invention can realize the removal of chemical inert materials by combining plasma discharge to remove oxide films, and compared with an electrolytic plasma technology, the composite processing method provided by the invention has the characteristics of flexibility and convenience and can realize the removal of selective materials. Therefore, by combining the electrochemical jet processing method and the electrolytic plasma technology, the embodiment of the invention plays respective advantages to realize the processing of the chemical inert material, avoids the restriction factors of complex process flow, multiple intermediate steps, easy environmental pollution, strict safety protection and the like of the traditional etching technology, reduces the cost and opens up a new process method for the preparation mode of related products.
In the plasma electrochemical jet composite processing method of the above embodiment, the electric field is applied between the nozzle 100 and the workpiece 200 in such a way that the workpiece 200 is connected to the positive electrode 310 of the power supply and the nozzle 100 is connected to the negative electrode 320 of the power supply, and the basic principle of the plasma electrochemical jet composite processing method of the present embodiment is that the electric field is applied between the workpiece 200 to be processed at the anode and the metal nozzle 100 at the cathode, a layer of oxide film 230 is generated on the surface of the workpiece 200 at the processing area of the electrochemical oxidation-reduction reaction, and at the same time, the oxide film 230 and the electrolyte 400 contact interface are separated out to generate oxygen bubbles 240 to form a gas film, and when the applied voltage exceeds a critical value, the oxide film 230 and the electrolyte gas film formed on the surface of the workpiece 200 are destroyed by the plasma discharge in the ejection area, so that the electrochemical etching of the material at high temperature is realized. In this embodiment, the power supply is set to be in a constant voltage output mode, the voltage range is 100V to 300V, and specific values can be reasonably configured according to actual processing materials and processing requirements. In addition, the current waveform output by the power supply is a direct current waveform or a pulse waveform, and an oscilloscope probe can be used for detecting voltage and current signals during processing so as to monitor the current during processing.
In the plasma electrochemical jet flow composite processing method in the embodiment, the electrolyte 400 is a neutral salt solution, so that strong acid and alkali solutions such as hydrofluoric acid or potassium hydroxide which are commonly used for processing chemically inert materials are avoided, and the method is environment-friendly, safe and reliable. Specifically, the electrolyte 400 may be a NaNO 3 aqueous solution with a mass fraction ranging from 0.5% to 20%, or a NaCl aqueous solution.
In the plasma electrochemical jet composite machining method of the above embodiment, the position of the nozzle 100 is adjusted before machining so that the nozzle 100 maintains the initial gap 500 with the workpiece 200. In this embodiment, the initial gap 500 may be 0.2mm to 0.8mm, and may be configured correspondingly according to different materials.
In the plasma electrochemical jet composite processing method of the above embodiment, the nozzle 100 having an inner diameter of 0.1mm to 2mm may be selected, and the stainless steel 304 material nozzle 100 may be selected. The nozzle 100 is connected to the electrolyte tank 110 through a pipe to continuously supply the electrolyte 400. Electrolyte 400 may be pumped to nozzle 100 by an electrolyte pump. The pipeline can be provided with a pressure gauge for measuring real-time pressure, and the pressure of the electrolyte 400 is adjusted to enable the flow rate of the electrolyte 400 to reach a set value, for example, the flow rate of the electrolyte 400 can be 3.8m/s.
In the plasma electrochemical jet composite processing method of the above embodiment, the electrolyte 400 sprayed from the nozzle 100 may be collected by the electrolytic cell and the electrolytic cell may be connected to the electrolyte tank 110, thereby discharging the electrolyte 400 in the electrolytic cell into the electrolyte tank 110. An electrolyte 400 circulation device can be also configured to realize circulation of the electrolyte 400. Specifically, the fixture may be placed in the electrolytic tank, so that when the workpiece 200 is clamped on the fixture for processing, the electrolytic tank may be used for collecting and discharging the electrolyte 400 sprayed from the nozzle 100, and the electrolyte 400 circulation device includes an electrolyte tank 110, a liquid feeding pipeline, a liquid return pipeline and a liquid feeding device, the nozzle 100 is communicated with the electrolyte tank 110 through the liquid feeding pipeline, the liquid feeding device is disposed in the liquid feeding pipeline, the liquid return pipeline is communicated with the electrolytic tank, and is used for discharging the electrolyte 400 in the electrolytic tank into the electrolyte tank 110, and the electrolyte 400 can be sent into the nozzle 100 again through the liquid feeding pipeline, thereby realizing circulation of the electrolyte 400. A filter may be provided on the return line to separate the process waste from flowing into the electrolyte tank 110. An electrolyte pump may be connected to the liquid feeding line to pump electrolyte to the nozzle 100, and a pressure gauge may be further provided to the liquid feeding line for monitoring the pressure in the liquid feeding line in real time, thereby serving as a reference for adjusting the jet flow rate of the electrolyte 400.
In the plasma electrochemical jet composite processing method of the above embodiment, the voltage threshold value for generating the plasma discharge breakdown oxide film 230 is determined by factors such as the gap between the nozzle 100 and the workpiece 200 (inter-electrode gap), the concentration of the electrolyte 400, and the material properties of the workpiece 200, and the specific values can be reasonably configured according to the actual processing materials and processing requirements. For example, for different chemically inert materials such as niobium, silicon carbide, and the like, by changing the process parameters such as voltage, initial gap 500, concentration of electrolyte 400, and the like, the generation of plasma can be controlled so as to remove oxide film 230, and the method is suitable for processing various materials, and has the characteristics of flexibility, convenience, and capability of realizing selective removal of materials.
In the plasma electrochemical jet composite processing method in the above embodiment, by controlling the relative movement between the nozzle 100 and the workpiece 200 to be processed, the micro-groove structure can be conveniently processed on the surface of the material, and further, the movement track can be changed to realize the surface patterning processing.
In the plasma electrochemical jet composite processing method of the above embodiment, the workpiece 200 to be processed may be clamped by a clamp, and the relative movement between the nozzle 100 and the workpiece 200 may be achieved by adjusting the relative movement of the nozzle 100 and the clamp. In the specific implementation, the movable workbench is arranged, the clamp is arranged on the movable workbench, and the movement of the workpiece 200 is regulated through the position movement of the workbench, so that the mechanical regulation of the position of the workpiece 200 is facilitated. The nozzle 100 may be further disposed on a driving mechanism, and the position of the nozzle 100 with respect to the workpiece 200 may be adjusted by driving the driving mechanism, so that various machining motion trajectories may be realized.
The following is a process flow of a specific embodiment of the above plasma electrochemical jet composite processing method, which generally includes the following steps:
S100, sequentially carrying out ultrasonic degreasing treatment on a workpiece to be processed in acetone and ethanol, then washing with deionized water, drying with compressed air, and clamping and accurately positioning the workpiece to be processed by a clamp;
S200, connecting a nozzle with an electrolyte pipeline, and adjusting the position of the nozzle to enable the initial gap between the nozzle and a workpiece to be processed to be 0.2 mm-0.8 mm;
S300, connecting a workpiece to be processed to a positive electrode of a power supply, connecting a nozzle to a negative electrode of the power supply, setting a constant voltage output mode of the power supply, setting a voltage range to 100V-300V, enabling a current waveform to be direct current or pulse, and detecting a voltage current signal in processing by adopting an oscilloscope probe;
s400, starting an electrolyte pump, spraying electrolyte to the surface of a workpiece to be processed through a nozzle, and adjusting the electrolyte pressure to enable the flow rate of the electrolyte to be 3.8m/S;
s500, starting a power supply, controlling a machining motion track, and generating plasma discharge on the surface of a workpiece to break down an oxide film for material machining;
And S600, turning off a power supply after machining, turning off an electrolyte pump, and taking out the workpiece.
The embodiment of the invention further provides a plasma electrochemical jet flow composite processing device, fig. 3 is a schematic module diagram of the plasma electrochemical jet flow composite processing device, fig. 4 is a schematic perspective structure diagram of the plasma electrochemical jet flow composite processing device, and meanwhile, referring to fig. 3 and fig. 4, and in combination with fig. 2, the plasma electrochemical jet flow composite processing device according to the embodiment of the invention comprises a frame and a jet device, a workbench 600 is arranged on the frame, a clamp 610 for clamping a workpiece 200 to be processed is arranged on the workbench 600, and the clamp 610 can adopt a conventional three-jaw or four-jaw clamp 610. The spraying device includes a nozzle 100, the nozzle 100 being directed toward the jig 610 for spraying the electrolyte 400 toward the workpiece 200. The workpiece 200 to be processed is only clamped on the clamp 610, the nozzle 100 is connected with the power negative electrode 320, the workpiece 200 is connected with the power positive electrode 310, the electrolyte 400 is sprayed on the surface of the workpiece 200 through the nozzle 100, and an electric field is applied between the nozzle 100 and the workpiece 200 through the power supply, so that a composite processing mode of electrolytic plasma processing and electrochemical jet processing is realized.
When the power is turned on, an oxide film is generated on the surface of the anode workpiece 200 in the processing area due to the electrochemical oxidation-reduction reaction, the electrochemical reaction is prevented from proceeding, meanwhile, oxygen is generated at the interface where the oxide film is contacted with the electrolyte 400, and when the potential between the two electrodes reaches a critical value, dielectrics such as the oxide film, the air film and the like at the interface are broken down to form a discharge channel, so that complex physical and chemical reactions occur at local instantaneous high temperature on the surface of the workpiece 200, and further, surface selective processing is realized.
The plasma electrochemical jet flow composite processing device of the embodiment can be applied to the plasma electrochemical jet flow composite processing method of the embodiment, and a composite processing mode of electrolytic plasma processing and electrochemical jet flow processing is realized.
The plasma electrochemical jet combined machining apparatus may further include a power supply device 300, wherein a positive electrode of the power supply device 300 is connected to the workpiece 200, and a negative electrode of the power supply device is connected to the nozzle 100. The power supply 300 outputs high-voltage direct current, and the nozzle 100 is made of a conductive material (e.g., a metal nozzle 100). The power supply device 300 may be a device that extracts energy from the power grid, provides power to one or more loads after conversion, or may be a device that is self-contained in the processing device and powered by a battery. In this embodiment, the power supply is set to be in a constant voltage output mode, the voltage range is 100V to 300V, and specific values can be reasonably configured according to actual processing materials and processing requirements. The current waveform outputted from the power supply is a dc waveform or a pulse waveform, and the power supply device 300 is connected to the probe of the oscilloscope 330 for detecting the voltage and current signals during processing and monitoring the current during processing.
In the plasma electrochemical jet composite processing device of the above embodiment, the device may further include a driving device, where the driving device is connected to the frame and is used to drive the workbench 600 and the nozzle 100 to relatively move, so as to implement the relative movement between the workpiece 200 to be processed and the nozzle 100, adjust the gap between the nozzle 100 and the workpiece 200 before processing, and adjust the processing track during processing, so as to implement the patterning scanning processing of micro-grooves and the like.
Specifically, the driving device may perform motion control in three directions of X, Y, Z axes (illustrated in a conventional X, Y, Z space rectangular coordinate system in the drawing), for example, the driving device may include a first driving portion 710, a second driving portion 720, and a third driving portion 730, wherein the first driving portion 710 is connected to the spraying device and is used for driving the spraying device to move along the Z axis, so as to implement motion of the nozzle 100 along the Z axis, the second driving portion 720 is connected to the first driving portion 710 and is used for driving the first driving portion 710 and the spraying device to move along the X axis, so as to implement motion of the nozzle 100 along the X axis, and the third driving portion 730 is connected to the table 600 and is used for driving the table 600 to move along the Y axis, so as to implement motion of the workpiece 200 to be processed along the Y axis. Thus, the relative motion between the nozzle 100 and the workpiece 200 can be adjusted in three directions along the X, Y, Z axis. The first driving part 710, the second driving part 720 and the third driving part 730 may be a linear motor, a cylinder or other common power element.
In other embodiments, the motion adjustment in the X, Y axis direction may be configured on the workbench 600, and the spraying device only performs motion control in the Z axis direction, specifically, the workbench 600 may be configured as a X, Y axis motion platform, the spraying device is connected to the Z axis motion mechanism, that is, a driving mechanism is provided to drive the workbench 600 to move along the X, Y axis, and another driving mechanism is provided to drive the spraying device to move along the Z axis, so that the workpiece 200 to be processed can move in the X, Y axis direction, the nozzle 100 can move in the Z axis direction, and the relative motion between the nozzle 100 and the workpiece 200 can also be adjusted in the X, Y, Z axis direction.
In other embodiments, the three-axis manipulator may be used to manipulate the nozzle 100 to adjust the three directions of X, Y, Z axes, while the table is stationary relative to the frame, or the relative motion between the nozzle 100 and the workpiece 200 may be adjusted in the three directions of X, Y, Z axes.
In the plasma electrochemical jet combined machining apparatus of the above embodiment, an electrolytic tank 620 may be further provided on the table 600, the jig 610 may be placed in the electrolytic tank 620, and the electrolyte 400 sprayed from the nozzle 100 may be collected by the electrolytic tank 620 and the electrolytic tank 620 may be connected to the electrolyte tank 110, thereby discharging the electrolyte 400 in the electrolytic tank 620 into the electrolyte tank 110. An electrolyte 400 circulation device can be also configured to realize circulation of the electrolyte 400.
Specifically, the fixture 610 may be placed in the electrolytic tank 620, and when the workpiece 200 is clamped on the fixture 610 for processing, the electrolytic tank 620 may be used for collecting and discharging the electrolyte 400 ejected from the nozzle 100, and the electrolyte 400 circulation device includes the electrolyte tank 110, the liquid feeding pipeline 120, the liquid return pipeline 130 and the liquid feeding device 140, where the nozzle 100 is communicated with the electrolyte tank 110 through the liquid feeding pipeline 120, and the liquid feeding device 140 is disposed on the liquid feeding pipeline 120 and may be an electrolyte pump for pumping the electrolyte. The tank wall or tank bottom of the electrolytic tank 620 may be provided with a liquid outlet, and the liquid return pipeline 130 is connected to the liquid outlet of the electrolytic tank 620, so as to drain the electrolyte 400 in the electrolytic tank 620 into the electrolyte tank 110, and the electrolyte 400 can be sent into the nozzle 100 again through the liquid sending pipeline 120, so as to realize circulation of the electrolyte 400. A filter 150 may be disposed on the return line 130 to separate the process waste from flowing into the electrolyte tank 110. An electrolyte pump may be connected to the liquid feeding line 120 to pump the electrolyte to the nozzle 100, and the liquid feeding line 120 may be further provided with a pressure gauge 160 for monitoring the pressure in the liquid feeding line 120 in real time, thereby serving as a reference for adjusting the jet flow rate of the electrolyte 400.
In the above embodiment, the nozzle 100 may be a metal nozzle 100 with an inner diameter of 0.1 mm-2 mm, the material of the nozzle 100 may be stainless steel 304, and the electrolyte 400 may be NaNO 3 aqueous solution with a mass fraction range of 0.5% -20%, or other neutral salt solution such as NaCl aqueous solution. The flow rate of the electrolyte 400 may be set to 3.8m/s, and the initial gap 500 between the adjustment nozzle 100 and the workpiece 200 to be processed may be 0.2mm to 0.8mm before processing.
The plasma electrochemical jet flow composite processing device can also comprise a controller, wherein the controller is electrically connected with the composite processing device, specifically, the controller is used for controlling the operation of an electrical device in the composite processing device, and the controller can be a PLC (Programmable Logic Controller/programmable logic controller), a singlechip, a time control switch, a micro-processing terminal and the like, and can realize the driving of a nozzle and/or a workbench, the on-off of a power supply, the on-off of a liquid feeding device and the like through a preset scheme, so as to realize the ordered operation of the electrical device. Meanwhile, the controller can collect and process the data of sensors and meters (such as pressure gauges and oscilloscopes) in the system, and is used for feeding back the running state of the system and providing basis for system regulation and control. The controller can realize the control process and method, for example, a programmable memory is adopted by the PLC, and instructions for executing logic operation, sequence control, timing, counting, arithmetic operation and other operations are stored in the PLC, and various types of mechanical equipment or production processes are controlled through digital or analog input and output. Which belongs to the prior art and is not the gist of the present invention, and is not described in detail herein.
The method for processing by adopting the plasma electrochemical jet composite processing device mainly comprises the following steps:
1. Placing a workpiece to be processed in a machine tool electrolytic tank, clamping the workpiece by using a clamp, and accurately positioning, wherein the workpiece to be processed can be pretreated firstly, namely sequentially carrying out ultrasonic degreasing treatment in acetone and ethanol, then washing the workpiece by using deionized water, and drying the workpiece by using compressed air;
2. A main shaft of the processing device is provided with a metal nozzle, the nozzle is connected with an electrolyte pipeline, and the position of the nozzle is adjusted to ensure that the nozzle maintains an initial gap with a workpiece to be processed;
3. Connecting a workpiece to be processed to the positive electrode of a power supply device, connecting a nozzle to the negative electrode of the power supply device, setting a constant voltage output mode of the power supply device, setting the voltage range to 100V-300V, enabling the current waveform to be direct current or pulse, and detecting a voltage current signal in processing by adopting an oscilloscope probe;
4. Starting an electrolyte pump, spraying electrolyte to the surface of a workpiece to be processed through a nozzle, and adjusting the electrolyte pressure to enable the flow rate of the electrolyte to be 3.8m/s;
5. Starting a power supply of a driving device, controlling the relative motion of a workpiece and a nozzle to adjust a machining motion track, and generating plasma discharge on the surface of the workpiece to break down an oxide film for material machining;
6. The power supply of the driving device is turned off after the processing is finished, and closing the electrolyte pump, and taking out the workpiece.
The plasma electrochemical jet flow composite processing method and the plasma electrochemical jet flow composite processing device provided by the embodiment of the invention have the following two specific application examples:
Taking silicon carbide as an example, a chemically inert semiconductor material, fig. 5 is a schematic view of forming an oxide film on the surface of the chemically inert semiconductor silicon carbide, fig. 6 is a schematic view of removing the material in fig. 5, 1 μm indicated by the lower left corner in fig. 5 and 200 μm indicated by the lower left corner in fig. 6 are scale, fig. 7 is a schematic view of a change process from an anodic oxidation region to a plasma discharge region under different process parameters, the ordinate indicates a current density (a/cm 2), the abscissa indicates a voltage (V), a curve L1 indicates Si (0.001-0.01 Ω -cm), a curve L2 indicates Nb (1.25x -9 Ω -cm), and a curve L3 indicates SiC (0.015-0.028 Ω -cm). Referring to fig. 5 to 7, the workpiece to be processed is an n-type 4H-SiC (0001) sample, the size is 10×10mm, the thickness is 350 μm, the resistivity is 0.015 to 0.028 Ω·cm, and the surface is subjected to chemical mechanical polishing treatment. Prior to the experiment, the samples were sequentially sonicated in acetone and ethanol, then rinsed with deionized water and dried using compressed air. The cathode is a stainless steel 304 nozzle, the inner diameter of the nozzle is 0.31mm, the electrolyte is NaNO 3 aqueous solution with a certain mass fraction, the mass fraction range is 0.5% -20%, the flow rate of the electrolyte is 3.8m/s, the initial gap of the electrode is 0.2 mm-0.8 mm, the power supply adopts a constant voltage output mode, the voltage range is 200V-300V, the current waveform is direct current or pulse, and an oscilloscope probe is adopted to acquire a voltage current signal. As can be seen from a comparison of fig. 5 and fig. 6, at a voltage of 200V, an electrochemical anodic oxidation process occurs on the surface, and when the voltage is continuously increased to reach a critical value, a plasma discharge breakdown oxide film is generated, so that micromachining of a chemically inert material can be realized under a thermal action mechanism. As shown in fig. 6, under the conditions of 220V and 14s of processing time, the plasma discharge is generated to break down the oxide film to remove the material, so that a radial micro pit is left, the diameter of the micro pit and the influence area thereof is 633 μm, which is about 2 times of the diameter of the nozzle, and the dotted line in the figure represents the influence area of the micro pit. As can be seen from fig. 7, the electrolyte mass fraction was 20wt.%, the initial working gap was 200 μm, and the current density increased linearly with the increase in voltage in the anodic oxidation zone S1. Above a certain voltage threshold, a plasma discharge occurs and the current density rises at a higher rate, as shown by the curved plasma discharge region S2. According to different electrolyte concentrations, the corresponding critical voltage separating the two areas is in the range of 200V-260V, and the higher electrolyte concentration corresponds to the lower critical voltage.
Taking chemically inert semiconductor silicon and metal niobium as an example, fig. 8-11 show several examples of micro-groove patterns processed on the surfaces of the chemically inert semiconductor silicon and the metal niobium, wherein 200 μm and 400 μm marked on the lower left corner in the figures are scale bars, and the micro-groove pattern structure is processed on the surface of the material by controlling the relative movement between a metal nozzle and a workpiece to be processed during specific processing. The anode workpiece is a p-type Si (100) sample with the size of 10 multiplied by 10mm, the thickness of 460 mu m, the resistivity of 0.001-0.01 omega cm, the surface of which is subjected to chemical mechanical polishing treatment, and the niobium sample with the size of 10 multiplied by 10mm, the thickness of 400 mu m and the resistivity of 1.25 multiplied by 10 -9 omega cm. Prior to the experiment, the samples were sequentially sonicated in acetone and ethanol, then rinsed with deionized water and dried using compressed air. The cathode is a stainless steel 304 nozzle, the inner diameter of the nozzle is 0.31mm, the electrolyte is NaNO 3 aqueous solution with the mass fraction of 20%, the electrolyte flow rate is 3.8m/s, the initial gap of the electrode is 200 mu m, the power supply adopts a constant voltage output mode, the voltage is 160V, and the relative movement speed between the metal nozzle and the workpiece to be processed is 0.3mm/s. Fig. 8 and 10 show the micro-grooves with good dimensional accuracy obtained on the silicon surface by using this method, and fig. 9 and 11 show the micro-grooves obtained on the niobium surface by using this method.
According to the plasma electrochemical jet flow composite processing method and the plasma electrochemical jet flow composite processing device, through continuous discharge of plasma generated by voltage induction on the surface of the workpiece electrode and charged particles in the plasma, newly generated oxide films are continuously removed, localized efficient removal of chemical inert materials is achieved, and the plasma electrochemical jet flow composite processing device has good application prospects and advantages. The plasma electrochemical jet flow composite processing method and device provided by the embodiment of the invention can be applied to a composite electrolytic processing machine tool, superconducting magnetic suspension equipment, a gas turbine engine, surgical equipment, a power semiconductor device and the like.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.
Claims (9)
1. The plasma electrochemical jet flow composite processing method is characterized by comprising the steps of adopting an electrochemical jet flow mode through a jet device, jetting electrolyte to a workpiece to be processed through a nozzle of the jet device, connecting the workpiece to a positive electrode of a power supply, connecting the nozzle to a negative electrode of the power supply, applying an electric field between the nozzle and the workpiece, enabling an oxide film to be generated on the surface of the workpiece through electrochemical oxidation-reduction reaction under a set voltage, enabling gas to be separated out from a contact interface between the oxide film and the electrolyte to generate oxygen bubbles to form a gas film, and continuously increasing the voltage until the applied voltage exceeds a critical value, wherein plasma is generated on the surface of the workpiece to enable the oxide film and the gas film generated by the electrochemical jet flow to be broken down so as to remove the surface material of the workpiece.
2. The method according to claim 1, wherein the power supply is set to a constant voltage output mode, the output current waveform is a direct current waveform or a pulse waveform, and the voltage range is 100V to 300V.
3. The method of claim 1, wherein an initial gap between the nozzle and the workpiece is between 0.2 mm and 0.8 mm.
4. The method of claim 1, wherein the electrolyte is a neutral salt solution.
5. The plasma electrochemical jet flow composite processing method according to claim 4, wherein the electrolyte is a NaNO 3 aqueous solution with a mass fraction range of 0.5% -20%, or the electrolyte is a NaCl aqueous solution.
6. The method of any one of claims 1 to 5, wherein the trajectory of the nozzle relative to the surface of the workpiece is controlled to process a desired location to achieve localized material removal.
7. A plasma electrochemical jet composite machining apparatus for carrying out the plasma electrochemical jet composite machining method according to any one of claims 1 to 6, characterized by comprising:
The machine comprises a rack, wherein a workbench is arranged on the rack, and a clamp for clamping a workpiece to be processed is arranged on the workbench;
a spraying device including a nozzle facing the jig for spraying an electrolyte toward the workpiece;
and the positive electrode of the power supply device is connected with the workpiece, and the negative electrode of the power supply device is connected with the nozzle.
8. The plasma electrochemical jet composite machining apparatus of claim 7, further comprising a drive device coupled to the frame for driving the relative movement of the table and the nozzle.
9. The plasma electrochemical jet composite processing apparatus of claim 7 or 8, wherein an electrolytic cell is further provided on the table, the jig being placed in the electrolytic cell for collecting and discharging the electrolyte ejected from the nozzle.
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| CN110453261A (en) * | 2019-07-24 | 2019-11-15 | 南方科技大学 | Material surface modification method and device based on electrochemistry |
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