CN112582511B - Micro light emitting diode chip and display panel - Google Patents
Micro light emitting diode chip and display panel Download PDFInfo
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- CN112582511B CN112582511B CN201910944842.5A CN201910944842A CN112582511B CN 112582511 B CN112582511 B CN 112582511B CN 201910944842 A CN201910944842 A CN 201910944842A CN 112582511 B CN112582511 B CN 112582511B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
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- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
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Abstract
本发明提供一种微发光二极管芯片及显示面板，其中，本发明提供的微发光二极管芯片包括第一类型半导体层、发光层、第二类型半导体层、第一类型电极层、第二类型电极层和绝缘钝化层，第一类型半导体层、发光层、第二类型半导体层依次层叠设置；第一类型电极层形成在第一类型半导体层一侧的侧壁上；绝缘钝化层覆盖第一类型半导体层的部分侧壁、第一类型电极层的侧壁和底面、发光层的侧壁、第二类型半导体层的侧壁和部分底面；第二类型电极层覆盖绝缘钝化层，第二类型电极层与第二类型半导体层露出绝缘钝化层的部分底面欧姆接触。本发明提供的微发光二极管芯片解决了现有的微发光二极管芯片转移难度大、显示效果差的问题。
The present invention provides a micro light emitting diode chip and a display panel, wherein the micro light emitting diode chip provided by the present invention includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, a first-type electrode layer, and a second-type electrode layer and an insulating passivation layer, the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are stacked in sequence; the first type electrode layer is formed on the sidewall of one side of the first type semiconductor layer; the insulating passivation layer covers the first type of semiconductor layer. Part of the sidewall of the type semiconductor layer, the sidewall and bottom surface of the first type electrode layer, the sidewall of the light emitting layer, the sidewall and part of the bottom surface of the second type semiconductor layer; the second type electrode layer covers the insulating passivation layer, the second The type electrode layer is in ohmic contact with a portion of the bottom surface of the second type semiconductor layer exposed to the insulating passivation layer. The micro-light-emitting diode chip provided by the present invention solves the problems of high transfer difficulty and poor display effect of the existing micro-light-emitting diode chip.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro light emitting diode chip and a display panel.
Background
A micro light emitting diode (μ LED) display panel is a display panel that realizes image display by integrating micro LED chips having a size of hundreds of micrometers or less on one substrate as display pixels, each of which can be individually driven to light, and is a self-luminous display panel.
Because the side wall area of current little emitting diode chip is great, has the optical crosstalk problem that the lateral wall light-emitting caused, and the optical crosstalk problem can lead to the relatively poor display panel of display panel's display effect so the current little emitting diode chip has the problem that the display effect that optical crosstalk leads to is poor.
Disclosure of Invention
The embodiment of the invention provides a micro light-emitting diode chip and a display panel, which are used for solving the problem of poor display effect of the existing micro light-emitting diode.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
in one aspect, an embodiment of the present invention provides a micro light emitting diode chip, including a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode layer, a second type electrode layer, and an insulating passivation layer,
the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are sequentially stacked;
the first type electrode layer is positioned on the side wall of one side of the first type semiconductor layer and is in ohmic contact with the first type semiconductor layer;
the insulating passivation layer covers part of the side wall of the first type semiconductor layer, the side wall and the bottom surface of the first type electrode layer, the side wall of the light emitting layer, and the side wall and part of the bottom surface of the second type semiconductor layer;
the second-type electrode layer covers the insulating passivation layer, and part of the bottom surface of the second-type semiconductor layer, which is exposed out of the insulating passivation layer, is in ohmic contact with the second-type electrode layer.
As an improvement of the micro light emitting diode chip in the embodiment of the invention, a plane perpendicular to the light emitting surface is taken as a cross section, and the cross sections of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are in an inverted trapezoid shape.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the first type electrode layer and the second type electrode layer are metal electrode layers.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the first type semiconductor layer, the light emitting layer, and the second type semiconductor layer are in the shape of a truncated cone or a truncated pyramid.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the first type electrode layer horizontally extends to a side away from the first type semiconductor layer to form a first protruding portion; the second type electrode layer horizontally extends to the other side far away from the first type electrode layer to form a second extending part.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, a top surface of the first protruding portion is flush with a top surface of the second protruding portion in a vertical direction.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, a top surface of the first protruding portion is flush with a top surface of the first type semiconductor layer in a vertical direction.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, a top surface of the first protruding portion is higher than a top surface of the first type semiconductor layer in a vertical direction.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the top surface of the first type semiconductor layer is provided with a rough surface.
Compared with the prior art, the micro light-emitting diode chip provided by the embodiment of the invention has the following advantages:
according to the micro light-emitting diode chip provided by the embodiment of the invention, the first type electrode layer covers the side wall of the first type semiconductor layer, and the second type electrode layer covers the insulating passivation layer, so that the first type electrode layer and the second type electrode layer jointly cover all the side walls of the micro light-emitting diode chip, the possibility of light emitting from the side walls is reduced or avoided, and the problem of optical crosstalk is further avoided; meanwhile, the first type electrode layer and the second type electrode layer do not shield the light-emitting surface, so that the display effect of the micro light-emitting diode chip is improved; furthermore, the first type electrode layer and the second type electrode layer have reflection performance, so that light rays emitted to the side wall can be reflected, and the possibility of light emitting from the side wall can be further reduced or avoided; in addition, the top surfaces of the first type electrode layer and the second type electrode layer are exposed in the same direction, so that the first type electrode layer and the second type electrode layer are conveniently aligned and connected with the driving substrate in batch transfer, and the problem of high transfer difficulty is solved.
On the other hand, the embodiment of the invention also provides a display panel, which comprises the micro light-emitting diode chip.
The display panel provided by the embodiment of the invention includes the micro light emitting diode chip, and therefore, the display panel also has the same advantages as those of the micro light emitting diode chip, and the description thereof is omitted.
In addition to the technical problems solved by the present invention, the technical features constituting the technical solutions, and the advantages brought by the technical features of the technical solutions described above, other technical problems that can be solved by the micro-light emitting diode chip and the display panel provided by the embodiments of the present invention, other technical features included in the technical solutions, and advantages brought by the technical features will be further described in detail in the detailed description.
Drawings
In order to illustrate embodiments of the invention or prior art solutions more clearly, the drawings that are needed in the description of the embodiments of the invention or prior art will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the invention, and that these drawings and the written description are not intended to limit the scope of the disclosed concept in any way, but rather to illustrate it to those skilled in the art by referring to specific embodiments, and that other drawings may be obtained from these drawings without inventive effort to those skilled in the art.
Fig. 1 is a first schematic structural diagram of a micro light emitting diode chip according to a first embodiment of the present invention;
FIG. 2 is a top view of FIG. 1;
fig. 3 is a schematic structural diagram of a micro light emitting diode chip according to a first embodiment of the present invention.
Description of reference numerals:
10-a first type semiconductor layer;
11-step surface;
20-a second type semiconductor layer;
30-a light-emitting layer;
40-a first type electrode layer;
41-a first extension;
50-a second type electrode layer;
51-a second extension;
60-insulating passivation layer.
Detailed Description
The existing micro light-emitting diode chip has the problems of high difficulty in batch transfer of light-emitting diodes and poor display effect caused by optical crosstalk.
In view of the above drawbacks, an embodiment of the present invention provides an improved technical solution, in which a micro light emitting diode chip includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode layer, a second type electrode layer, and an insulating passivation layer, and the first type electrode layer covers a sidewall of the first type semiconductor layer, and the second type electrode layer covers the insulating passivation layer, so that the first type electrode layer and the second type electrode layer jointly cover all sidewalls of the micro light emitting diode chip, thereby reducing or avoiding a possibility of light emission from the sidewalls, and further avoiding a problem of optical crosstalk; meanwhile, the first type electrode layer and the second type electrode layer do not shield the light-emitting surface, so that the display effect of the micro light-emitting diode chip is improved; furthermore, the first type electrode layer and the second type electrode layer have reflection performance, so that light rays emitted to the side wall can be reflected, and the possibility of light emitting from the side wall can be further reduced or avoided; the top surfaces of the first type electrode layer and the second type electrode layer are exposed in the same direction, so that the first type electrode layer and the second type electrode layer are conveniently aligned and connected with the driving substrate in batch transfer, and the problem of high transfer difficulty is solved.
In order to make the aforementioned objects, features and advantages of the embodiments of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1 to 3, a micro light emitting diode chip according to a first embodiment of the present invention includes a first type semiconductor layer 10, a light emitting layer 30, a second type semiconductor layer 20, a first type electrode layer 40, a second type electrode layer 50, and an insulating passivation layer 60, wherein the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 are sequentially stacked; the first-type electrode layer 40 is positioned on a sidewall of one side of the first-type semiconductor layer 10 and in ohmic contact with the first-type semiconductor layer 10; the insulating passivation layer 60 covers a portion of the sidewalls of the first-type semiconductor layer 10, the sidewalls and the bottom surface of the first-type electrode layer 40, the sidewalls of the light emitting layer 30, the sidewalls and a portion of the bottom surface of the second-type semiconductor layer 20; the second-type electrode layer 50 covers the insulating passivation layer 60, and a portion of the bottom surface of the second-type semiconductor layer 20, which exposes the insulating passivation layer 60, is in ohmic contact with the second-type electrode layer 50.
In this embodiment, as shown in fig. 1, the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 are stacked from top to bottom, and it should be noted that the top surface of the first type semiconductor layer 10 is a light emitting surface, specifically, the light emitting layer 30 is formed on the bottom surface of the first type semiconductor layer 10, and the second type semiconductor layer 20 is formed on the bottom surface of the light emitting layer 30. The first-type electrode layer 40 is formed on a sidewall of the first-type semiconductor layer 10, and the first-type electrode layer 40 forms an ohmic contact with the first-type semiconductor layer 10.
Further, step surfaces 11 may be disposed on the sidewalls of the first type semiconductor layer 10, as shown in fig. 3, when the first type electrode layer 40 is formed on the first type semiconductor layer 10, the step surfaces 11 are covered, so as to increase the coverage area and further improve the ohmic contact performance, and meanwhile, the step surfaces 11 are disposed to facilitate the formation of the second type electrode layer 50, thereby reducing the processing difficulty of the second type electrode layer 50.
On the basis of the above embodiment, as shown in fig. 1, the insulating passivation layer 60 covers the first type electrode layer 40, the first type semiconductor layer 10, the light emitting layer 30 and the second type semiconductor layer 20, and the second type electrode layer 50 is formed on the insulating passivation layer 60, the insulating passivation layer 60 in this embodiment has high transparency to visible light, and the insulating passivation layer 60 may be specifically configured as a transparent adhesive layer. Taking the orientation shown in fig. 1 as an example, the second-type electrode layer 50 is formed on the bottom surface and the sidewall of the insulating passivation layer 60, a portion of the bottom surface of the second-type semiconductor layer 20 exposes the insulating passivation layer 60, and the second-type electrode layer 50 is connected to the exposed portion to form an ohmic contact.
Specifically, the second-type electrode layer 50 may be provided with an extension in the horizontal direction for supporting the sidewall portions of the insulating passivation layer 60, the first-type electrode layer 40, the first-type semiconductor layer 10, the light emitting layer 30, and the second-type semiconductor layer 20 to reduce the difficulty of processing. Preferably, the sidewalls of the second-type electrode layer 50 may be perpendicular to the horizontal direction, and the sidewalls of the second-type electrode layer 50 are aligned with the outermost ends of the first-type electrode layers 40 in the horizontal direction.
In summary, in the micro light emitting diode chip provided in the first embodiment of the present invention, the first type electrode layer 40 covers the sidewall of the first type semiconductor layer 10, and the second type electrode layer 50 covers the insulating passivation layer 60, so that the first type electrode layer 40 and the second type electrode layer 50 cover all sidewalls of the micro light emitting diode chip together, thereby reducing or avoiding the possibility of light emitting from the sidewalls, and further avoiding the problem of optical crosstalk; meanwhile, the first type electrode layer 40 and the second type electrode layer 50 do not shield the light-emitting surface, so that the display effect of the micro light-emitting diode chip is improved; in the micro light emitting diode chip provided by the first embodiment, the top surfaces of the first type electrode layer 40 and the second type electrode layer 50 are exposed in the same direction, so that the first type electrode layer and the second type electrode layer are conveniently aligned and connected with the driving substrate during batch transfer, and the problem of high transfer difficulty is solved.
Further, in a possible implementation manner, the cross-sectional shapes of the first-type semiconductor layer 10, the light emitting layer 30, and the second-type semiconductor layer 20 are inverted trapezoids with a plane perpendicular to the light emitting surface as a cross section. It should be noted that the cross section of the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 refers to a cross section of a stacked structure formed by the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20, in this embodiment, as shown in fig. 1, a surface (top surface) of the first type semiconductor layer 10 away from the light emitting layer is a light emitting surface, a plane perpendicular to the top surface of the first type semiconductor layer 10 is a cross section, and a cross section of the stacked structure formed by the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 is an inverted trapezoid.
In a possible implementation manner, the first type electrode layer 40 and the second type electrode layer 50 are metal electrode layers, and on the basis of the above embodiment, the first type electrode layer 40 and the second type electrode layer 50 cover the side walls of the micro light emitting diode, in this embodiment, the first type electrode layer 40 and the second type electrode layer 50 are set as metal electrode layers, specifically, silver, aluminum, and the like, and the reflectivity of metal is high, so that the reflectivity of the first type electrode layer 40 and the second type electrode layer 50 is further increased, light emitted to the side walls can be reflected, and light emission from the side walls can be further reduced or avoided.
In the above embodiment, the acute angle of the trapezoid ranges from 50 ° to 85 °. Specifically, in the present embodiment, the base angle of the trapezoid may take any value within a range of 50 ° to 85 °, and preferably, the cross-sectional shape of the stacked structure formed by the first type semiconductor layer 10, the light-emitting layer 30, and the second type semiconductor layer 20 is an isosceles trapezoid, and the base angle of the isosceles trapezoid may be set to 60 °, which facilitates the fabrication of the micro light-emitting diode chip.
In one possible implementation, the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 are shaped as truncated cones or truncated pyramids. The shape of the first-type semiconductor layer 10, the light-emitting layer 30, and the second-type semiconductor layer 20 refers to the shape of the laminated structure of the first-type semiconductor layer 10, the light-emitting layer 30, and the second-type semiconductor layer 20, and as shown in fig. 2, the laminated structure of the first-type semiconductor layer 10, the light-emitting layer 30, and the second-type semiconductor layer 20 may be a truncated pyramid, specifically, a truncated pyramid.
In one possible implementation, the first-type electrode layer 40 extends horizontally to a side away from the first-type semiconductor layer 10 to form a first protruding portion 41; the second-type electrode layer 50 extends horizontally to the other side away from the first-type electrode layer 40 to form a second protruding portion 51. Taking the orientation shown in fig. 1 as an example, the first-type electrode layer 40 covers one side of the sidewall of the first-type semiconductor layer 10, the first-type electrode layer 40 extends outward in a direction away from the first-type semiconductor layer 10 to form a first protruding portion 41, the top surface of the first protruding portion 41 is a flat surface, and specifically, the first protruding portion 41 may be thickened by an electroplating process when the first protruding portion 41 is formed, and the first protruding portion 41 may be planarized by a chemical mechanical polishing process. The top surface of the first protrusion 41 may be flush with the top surface of the first-type semiconductor layer 10 or may be higher than the top surface of the first-type semiconductor layer 10. The provision of the first extension 41 not only facilitates the formation of the subsequent insulating passivation layer 60, the second-type electrode layer 50, but also facilitates the alignment and connection with the driving substrate at the time of subsequent batch transfer.
After the first type electrode layer 40 forms the first protruding portion 41, the insulating passivation layer 60 covers the first type electrode layer 40, and the second type electrode layer 50 covers the insulating passivation layer 60, taking the orientation shown in fig. 1 as an example, the second type electrode layer 50 covers the insulating passivation layer 60 and extends to two sides, on the side away from the first protruding portion 41, the second type electrode layer 50 extends horizontally to form the second protruding portion 51, and the top surface of the second protruding portion 51 is a flat surface. Specifically, thickening may be performed by an electroplating process when forming the second-type electrode layer 50, and the second protrusion 51 may be subjected to a planarization process by a chemical mechanical polishing process. The top surface of the second protrusion 51 may be flush with the top surface of the first-type semiconductor layer 10 or may be higher than the top surface of the first-type semiconductor layer 10. The provision of the second projecting portion 51 facilitates alignment and connection with the drive substrate at the time of subsequent batch transfer.
In one possible implementation, the top surface of the first extension 41 is flush with the top surface of the second extension 51 in the vertical direction. On the basis of the above embodiment, the first-type electrode layer 40 forms the first protruding portion 41, and the second-type electrode layer 50 forms the second protruding portion 51, and the top surface of the first protruding portion 41 is flush with the top surface of the second protruding portion 51 in this embodiment, that is, the exposed portion of the first-type electrode layer 40 is flush with the exposed portion of the second-type electrode layer 50, which further improves the alignment accuracy when connecting to the drive substrate.
In one possible implementation, the top surface of the first protrusion 41 is flush with the top surface of the first-type semiconductor layer 10 in the vertical direction. In addition to the above embodiments, the top surface of the first protruding portion 41 is flush with the top surface of the second protruding portion 51, and in this embodiment, the top surface of the first protruding portion 41, the top surface of the second protruding portion 51, and the top surface of the first type semiconductor layer 10 are flush with each other, which facilitates the fabrication of the micro light emitting diode chip.
In another possible implementation, the top surface of the first protrusion 41 is higher than the top surface of the first-type semiconductor layer 10 in the vertical direction. On the basis of the above embodiment, the top surface of the first protruding portion 41 is flush with the top surface of the second protruding portion 51, and in this embodiment, the arrangement that the top surfaces of the first protruding portion 41 and the second protruding portion 51 are slightly higher than the top surface of the first type semiconductor layer 10 further ensures that light can be reflected, thereby avoiding the optical crosstalk problem.
In one possible implementation, the top surface of the first-type semiconductor layer 10 is provided as a rough surface. In this embodiment, the top surface of the first type semiconductor layer 10 is a rough surface, specifically, because there is a total reflection phenomenon when light is emitted from the optically dense medium to the optically thinner medium, if the interface is smooth and flat, light rays outside the reflective cone (the central axis of the cone is parallel to the normal of the interface) will be gradually absorbed by the material in the LED chip and cannot escape, and only light rays with an incident direction inside the reflective cone can partially escape; the rough surface can provide a plurality of oriented reflecting cones, and light rays in certain directions which cannot escape originally can also escape out of the LED chip, so that the rough surface is favorable for light extraction of the micro LED chip.
Example two
The display panel provided in the second embodiment of the present invention includes the micro light emitting diode chip provided in the first embodiment, wherein the structure, function, and implementation of the micro light emitting diode chip can refer to the detailed description in the above embodiments, and are not described herein again.
The display panel provided by the embodiment can be applied to any display device with a display function, which comprises a micro light emitting diode chip, such as a mobile phone, a tablet computer, an intelligent watch, an electronic book, a navigator, a television, a digital camera and the like. The display panel provided in this embodiment also has the same advantages as the micro led chip provided in the embodiment, and thus, the description thereof is omitted.
The embodiments or implementation modes in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
In the description of the present specification, reference to the description of the terms "one embodiment", "some embodiments", "an illustrative embodiment", "an example", "a specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A micro light emitting diode chip is characterized by comprising a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode layer, a second type electrode layer and an insulating passivation layer, wherein,
the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are sequentially stacked;
the first type electrode layer is positioned on the side wall of one side of the first type semiconductor layer and is in ohmic contact with the first type semiconductor layer;
the insulating passivation layer covers part of the side wall of the first type semiconductor layer, the side wall and the bottom surface of the first type electrode layer, the side wall of the light emitting layer, and the side wall and part of the bottom surface of the second type semiconductor layer;
the second-type electrode layer covers the insulating passivation layer, and part of the bottom surface of the second-type semiconductor layer, which is exposed out of the insulating passivation layer, is in ohmic contact with the second-type electrode layer;
the first type electrode layer horizontally extends to one side far away from the first type semiconductor layer to form a first protruding part; the second type electrode layer horizontally extends to the other side far away from the first type electrode layer to form a second extending part;
the top surface of the first extension part is flush with the top surface of the second extension part in the vertical direction;
the top surfaces of the first type electrode layer and the second type electrode layer are exposed in the same direction;
the top surface of the first type semiconductor layer is provided as a rough surface.
2. The micro light emitting diode chip of claim 1, wherein a cross section of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer is an inverted trapezoid.
3. The micro light-emitting diode chip of claim 1, wherein the first type electrode layer and the second type electrode layer are metal electrode layers.
4. The micro light emitting diode chip of claim 1, wherein the first type semiconductor layer, the light emitting layer, and the second type semiconductor layer are shaped as truncated cones or truncated pyramids.
5. The micro light-emitting diode chip of claim 1, wherein a top surface of the first protrusion is vertically flush with a top surface of the first type semiconductor layer.
6. The micro light-emitting diode chip of claim 1, wherein a top surface of the first protrusion is higher than a top surface of the first-type semiconductor layer in a vertical direction.
7. A display panel comprising the micro light-emitting diode chip as claimed in any one of claims 1 to 6.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944842.5A CN112582511B (en) | 2019-09-30 | 2019-09-30 | Micro light emitting diode chip and display panel |
| PCT/CN2020/098626 WO2021063048A1 (en) | 2019-09-30 | 2020-06-28 | Micro light-emitting diode chip and display panel |
| KR1020227005750A KR102693844B1 (en) | 2019-09-30 | 2020-06-28 | Micro light emitting diode chips and display panels |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944842.5A CN112582511B (en) | 2019-09-30 | 2019-09-30 | Micro light emitting diode chip and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112582511A CN112582511A (en) | 2021-03-30 |
| CN112582511B true CN112582511B (en) | 2022-08-02 |
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| KR (1) | KR102693844B1 (en) |
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| CN118805265A (en) * | 2022-03-03 | 2024-10-18 | 上海显耀显示科技有限公司 | Micro LED, Micro LED Panel and Micro LED Chip |
| CN114744095A (en) * | 2022-03-24 | 2022-07-12 | 深圳市思坦科技有限公司 | Preparation method of micro LED chip, micro LED chip and display device |
| JP2025527582A (en) * | 2022-09-09 | 2025-08-22 | ジェイド バード ディスプレイ（シャンハイ） リミテッド | Light-emitting pixel structure system for improving light-emitting efficiency and manufacturing method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0977277A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| KR100609968B1 (en) * | 2005-06-29 | 2006-08-08 | 엘지전자 주식회사 | Light-emitting diode having electrostatic protection function and manufacturing method thereof |
| CN101515621A (en) * | 2009-02-19 | 2009-08-26 | 旭丽电子(广州)有限公司 | Light emitting diode chip, manufacturing method and packaging method |
| TW201025556A (en) * | 2008-12-30 | 2010-07-01 | Epistar Corp | A chip level package of light-emitting diode |
| CN103996776A (en) * | 2010-02-18 | 2014-08-20 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN106299072A (en) * | 2016-09-30 | 2017-01-04 | 映瑞光电科技(上海)有限公司 | Light-emitting diode chip for backlight unit |
| CN107195747A (en) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | A kind of micron-scale flip LED chips and preparation method thereof |
| CN107210340A (en) * | 2015-01-21 | 2017-09-26 | Lg伊诺特有限公司 | Light-emitting element and electron beam deposition apparatus for manufacturing the light-emitting element |
| CN107968145A (en) * | 2017-08-28 | 2018-04-27 | 友达光电股份有限公司 | light emitting device |
| CN109755366A (en) * | 2018-11-05 | 2019-05-14 | 友达光电股份有限公司 | Component substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5286045B2 (en) * | 2008-11-19 | 2013-09-11 | スタンレー電気株式会社 | Manufacturing method of semiconductor light emitting device |
| JP5356312B2 (en) * | 2010-05-24 | 2013-12-04 | 株式会社東芝 | Semiconductor light emitting device |
| JP5368620B1 (en) * | 2012-11-22 | 2013-12-18 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
| KR102197082B1 (en) * | 2014-06-16 | 2020-12-31 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package including the same |
| CN104638077A (en) * | 2015-01-20 | 2015-05-20 | 沈光地 | Light output enhanced luminescent device and preparation method thereof |
| KR102294318B1 (en) * | 2015-03-26 | 2021-08-26 | 엘지이노텍 주식회사 | Light emitting device and light emitting device array including the same |
| WO2018174434A1 (en) * | 2017-03-23 | 2018-09-27 | 서울반도체주식회사 | Display device and manufacturing method thereof |
| TWI636219B (en) * | 2017-07-20 | 2018-09-21 | 泰谷光電科技股份有限公司 | Light-emitting diode structure for avoiding light leakage on the side of N-type semiconductor |
-
2019
- 2019-09-30 CN CN201910944842.5A patent/CN112582511B/en active Active
-
2020
- 2020-06-28 WO PCT/CN2020/098626 patent/WO2021063048A1/en not_active Ceased
- 2020-06-28 KR KR1020227005750A patent/KR102693844B1/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0977277A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| KR100609968B1 (en) * | 2005-06-29 | 2006-08-08 | 엘지전자 주식회사 | Light-emitting diode having electrostatic protection function and manufacturing method thereof |
| TW201025556A (en) * | 2008-12-30 | 2010-07-01 | Epistar Corp | A chip level package of light-emitting diode |
| CN101515621A (en) * | 2009-02-19 | 2009-08-26 | 旭丽电子(广州)有限公司 | Light emitting diode chip, manufacturing method and packaging method |
| CN103996776A (en) * | 2010-02-18 | 2014-08-20 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN107210340A (en) * | 2015-01-21 | 2017-09-26 | Lg伊诺特有限公司 | Light-emitting element and electron beam deposition apparatus for manufacturing the light-emitting element |
| CN106299072A (en) * | 2016-09-30 | 2017-01-04 | 映瑞光电科技(上海)有限公司 | Light-emitting diode chip for backlight unit |
| CN107195747A (en) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | A kind of micron-scale flip LED chips and preparation method thereof |
| CN107968145A (en) * | 2017-08-28 | 2018-04-27 | 友达光电股份有限公司 | light emitting device |
| CN109755366A (en) * | 2018-11-05 | 2019-05-14 | 友达光电股份有限公司 | Component substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021063048A1 (en) | 2021-04-08 |
| CN112582511A (en) | 2021-03-30 |
| KR20220031127A (en) | 2022-03-11 |
| KR102693844B1 (en) | 2024-08-12 |
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